CN112162468B - Ultra-high numerical aperture combined variable magnification extreme ultraviolet lithography illumination system - Google Patents
Ultra-high numerical aperture combined variable magnification extreme ultraviolet lithography illumination system Download PDFInfo
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
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Abstract
本发明提供一种超高数值孔径组合变倍率极紫外光刻照明系统，通过同时考虑不同视场复眼元和光阑复眼元对照明通道形成的照明光斑相对于期望光斑的光斑倾斜量与中心偏移的组合优化算法高效完成不同照明模式下双排复眼的对位匹配，通过该对位匹配关系下各相邻视场复眼相对旋转角度确定各视场复眼元不碰撞的最佳视场复眼排布。本发明利用上述设计方法，实现了可与组合变倍率物镜系统光瞳匹配的组合变倍率照明系统，并可以高效构建不同照明模式下双排复眼的对位匹配关系，且保障各视场复眼元之间无碰撞，同时可在不同照明模式下在掩模面上实现高照明均匀性，满足极紫外光刻照明系统设计需求，可用于超高数值孔径(NA>0.40)组合变倍率极紫外光刻物镜系统中。
The invention provides an ultra-high numerical aperture combined variable magnification extreme ultraviolet lithography illumination system. By simultaneously considering the compound eye element and the diaphragm compound eye element of different fields of view, the illumination spot formed by the illumination channel is relative to the desired spot. The combination optimization algorithm efficiently completes the alignment matching of the double-row compound eyes under different illumination modes, and the optimal field of view compound eye arrangement in which the compound eye elements of each field of view do not collide is determined by the relative rotation angle of the compound eyes of each adjacent field of view under the alignment and matching relationship. . Using the above design method, the present invention realizes a combined variable magnification illumination system that can match the pupil of the combined variable magnification objective lens system, and can efficiently construct the alignment matching relationship of double-row compound eyes under different illumination modes, and ensure the compound eye element of each field of view. There is no collision between them, and at the same time, high illumination uniformity can be achieved on the mask surface under different illumination modes, which meets the design requirements of EUV lithography lighting system, and can be used for ultra-high numerical aperture (NA>0.40) combined with variable magnification EUV light engraved in the objective system.
Description
Technical Field
The invention belongs to the field of optical design, and particularly relates to an ultrahigh numerical aperture combined variable-magnification extreme ultraviolet lithography illumination system.
Background
The extreme ultraviolet lithography (EUVL) is a lithography technology using Extreme Ultraviolet (EUV) rays with the wavelength of 11-14 nm as an exposure light source, and is suitable for mass production of integrated circuits with the characteristic dimension of 22nm and thinner line width. The core component of a projection lithography machine is a projection exposure optical system, and the core components of the system comprise an illumination system and a projection objective system.
The main function of the projection objective system is to demagnify image the pattern on the mask surface onto the silicon wafer. With the continuous shift of lithography technology nodes, euv lithography objective lens is developed from early NA0.10 and NA0.25 experimental systems to NA0.33 lithography objective lens systems used in the industrialized lithography machines for a long time now. The NA0.33 extreme ultraviolet projection photoetching objective lens adopts six free-form surface reflectors, has the micro magnification of 1/4, and can meet the requirements of technical nodes of 22nm, 16nm and 13 nm. However, when the technology node of 7nm and below is reached, the euv projection lithography objective lens with NA0.33 cannot meet the industrial requirements, and the NA must be increased to more than 0.50. If the traditional 1/4-times micro-magnification projection objective system is directly adopted to realize the ultrahigh numerical aperture (>0.40), at the moment, the incident angle of the chief ray of the central view field is larger than 6 degrees, so that the 3D shadow effect of the mask surface is brought, and meanwhile, the incident beam at the mask surface is overlapped with the emergent beam, so that the objective system cannot normally image, and therefore, the traditional 1/4-times micro-magnification lithography objective system cannot reasonably realize the ultrahigh numerical aperture; the projection lithography objective lens with 1/8 times of miniature magnification can realize the ultrahigh numerical aperture of 0.5-0.7 and can avoid the phenomenon, but the miniature magnification is improved to 1/8 from 1/4, so that the scanning exposure field area is changed into 1/4, and under the condition that the mask surface and the silicon wafer size are unchangeable, a 6-inch (133mm multiplied by 102mm) mask is imaged, 4 times of splicing exposure fields are required, and the production efficiency is seriously reduced.
For this reason, a combined variable magnification objective lens technology has been recently proposed for realizing an ultra-high NA euv projection lithography objective lens. The combined variable-magnification projection lithography objective system realizes different micro-magnifications in the scanning direction and the vertical scanning direction, for example, the micro-magnification in the scanning direction is 1/8, and the micro-magnification in the vertical scanning direction is 1/4. Different from the circular pupil of the traditional non-combined variable-magnification system (namely, the micro-magnification in the scanning direction is the same as that in the vertical scanning direction), the pupil of the combined variable-magnification objective lens is changed into an ellipse from a circle; the entrance pupil position of the non-combined variable-magnification objective lens is positioned in the objective lens system, and the entrance pupil position of the combined variable-magnification objective lens is positioned outside the objective lens system and in the illumination system.
The main functions of the illumination system are to provide uniform illumination of the mask surface, pupil matching with the projection objective and to achieve off-axis illumination modes. Since the uneven illumination of the mask surface can cause the inconsistent resolution of each field of view during projection imaging, which brings difficulty to the control of the exposure line width and seriously affects the photoetching performance, the design of the illumination system meeting the requirements is a key link for ensuring the photoetching performance and completing the whole projection exposure system.
At present, the mainstream design structure of an extreme ultraviolet lithography illumination system is a double-row compound eye illumination system based on Kohler illumination, and the system has the advantages of good light uniformizing effect, mature processing technology, convenience in control, easiness in off-axis illumination and the like. The core part of the double-row compound eye photoetching illumination system consists of a light source module, double-row compound eyes and a relay lens group, wherein the light source module consists of an LPP laser plasma light source and an ellipsoid collecting mirror and is used for generating a light source wavelength of 13.5 nm; the double-row compound eye consists of a field-of-view compound eye and a diaphragm compound eye and is used for realizing uniform light and multiple off-axis illumination modes; the relay lens group consists of two secondary curved surface reflectors and is used for realizing two groups of conjugate relations of 'field of view compound eye-mask surface' and 'diaphragm compound eye-illumination exit pupil surface' required by Kohler illumination, and simultaneously ensuring that the pupil of the illumination system is matched with that of the projection objective system. The illumination system matched with the combined variable-magnification extreme ultraviolet lithography objective lens system also needs to meet the requirements, namely, the high illumination uniformity is realized on the mask surface, the elliptical entrance pupil of the combined variable-magnification objective lens is matched, and various off-axis illumination modes can be realized.
Patent WO 2016078818a1 shows the design results of an illumination system using a double row of compound eye and grazing incidence relay lens sets and a subsequent NA0.55 combined variable power objective lens. The lighting system provided by the patent still uses double rows of compound eyes to homogenize light, the arrangement outline of the diaphragm compound eyes is elliptical, and two pieces of grazing incidence type relay lenses are used for light path deflection after the double rows of compound eyes; the subsequent combined variable-magnification objective lens has various structures such as six-lens-reflex structure, eight-lens-reflex structure and the like. The patent only discloses the design parameters of two sheets of grazing incidence relay lenses and subsequent projection objectives of the illumination system, and does not disclose the design parameters of double-row compound eyes and the uniformity result of the illumination system of each illumination mode.
In addition, because the field compound eye is composed of a plurality of micro mirrors, and each field compound eye element is closely arranged on the field compound eye flat plate, when the field compound eye adjusting angle is matched with the diaphragm compound eye to realize different illumination modes, collision between adjacent field compound eye elements is easy to occur, and the reason for the collision is that the distance between field compound eye elements is unreasonable to select. However, no published research report on the compound eye spacing of the field of view of the extreme ultraviolet lithography illumination system is found.
Disclosure of Invention
In order to solve the problems, the invention provides an ultrahigh numerical aperture combined variable-magnification extreme ultraviolet lithography illumination system which can realize high illumination uniformity under various off-axis illumination modes and meet the design requirements of an illumination system matched with a combined variable-magnification objective lens.
The utility model provides an ultra-high numerical aperture combination variable magnification extreme ultraviolet photoetching lighting system, its emergent light forms the illumination facula on the mask, and the emergent light incides projection photoetching objective system through the mask, and the pattern formation of mask is to the silicon chip by projection photoetching objective system again, simultaneously, lighting system includes light source module, the compound eye of field of view, the compound eye of diaphragm, first relay lens and the second relay lens that set gradually along the light path, the counterpoint matching method of each compound eye element of field of view on the compound eye of field of view and each compound eye element of diaphragm on the compound eye of diaphragm does:
s1: acquiring the number of diaphragm compound eye elements participating in illumination and the positions of the diaphragm compound eye elements participating in illumination in a set illumination mode, wherein the number of the diaphragm compound eye elements participating in illumination is the same as the number of the field compound eye elements contained in the field compound eye;
s2: respectively taking the compound eye elements of each view field as the compound eye elements of the current view field to execute charge acquisition operation to obtain the pairing cost between the compound eye elements of each view field and the diaphragm compound eye elements participating in illumination, wherein the charge acquisition operation is as follows:
s21: respectively forming different compound eye pairs by the current field compound eye elements and the diaphragm compound eye elements participating in illumination;
s22: respectively obtaining the pairing Cost of each compound eye pair:
Cost＝Angleori+ω×Lengthden
wherein, AngleoriAnd LengthdenThe main light emitted by the light source module passes through the compound eye pair, the first relay lens and the second relay lens respectively to form a light spot inclination amount and a central offset between an illumination light spot and an expected light spot on a mask, wherein omega is a set weight;
s3: constructing a cost matrix according to the pairing cost between each field-of-view compound eye element and each diaphragm compound eye element participating in illumination, and acquiring the pairing total cost corresponding to all possible pairing schemes between each field-of-view compound eye element and each diaphragm compound eye element participating in illumination according to the cost matrix, wherein in each possible pairing scheme, each field-of-view compound eye element corresponds to each diaphragm compound eye element participating in illumination one to one;
s4: and taking the one-to-one pairing relation between each field compound eye element and each diaphragm compound eye element participating in illumination in the pairing scheme corresponding to the minimum pairing total cost as a final alignment matching relation.
Furthermore, each of the field compound eye elements on the field compound eye forms a compound eye element array with a plurality of rows and columns, and the field compound eye elements in each row are parallel to each other, and meanwhile, the distance setting method between the field compound eye elements in each row on the field compound eye is as follows:
s5: acquiring the rotation angle of each field compound eye element by adopting an optical reflection law based on the alignment matching relationship between each field compound eye element and each diaphragm compound eye element participating in illumination;
s6: sequentially taking the compound eye elements of each line of the view field as the current line to execute a distance obtaining operation to obtain an expected minimum distance between the compound eye elements of the view field of the current line and the compound eye elements of the view field of the next line, wherein the distance obtaining operation is as follows:
s61: under the current interval, sequentially executing angle rotation operation by taking each field compound eye element in the current line as the current compound eye element to obtain the minimum interval between the current compound eye element and the adjacent compound eye element, wherein the adjacent compound eye element is the compound eye element adjacent to the current compound eye element in the field compound eye elements in the next line, when the angle rotation operation is executed for the first time, the current interval is a set initial value, and meanwhile, the angle rotation operation is as follows:
taking the parallel of the current compound eye element and the adjacent compound eye element as an initial state, rotating the current compound eye element and the adjacent compound eye element by a to-be-rotated angle alpha, and rotating the compound eye element with a larger rotation angle in the current compound eye element and the adjacent compound eye element by a relative rotation angle delta alpha, wherein the to-be-rotated angle alpha is a smaller value of rotation angles corresponding to the current compound eye element and the adjacent compound eye element, and the relative rotation angle delta alpha is a difference value between a larger value of the rotation angles corresponding to the current compound eye element and the adjacent compound eye element and the to-be-rotated angle alpha;
enabling the rotated current compound eye element and the adjacent compound eye element to be in a tangent state, wherein the distance between the rotated current compound eye element and the adjacent compound eye element is the minimum distance between the rotated current compound eye element and the adjacent compound eye element;
s62: taking the maximum value of the minimum distance between each field-of-view compound eye element in the current row and each corresponding adjacent compound eye element as the expected minimum distance between the field-of-view compound eye element in the current row and the field-of-view compound eye element in the next row;
s7: rearranging the compound eye elements of each view field according to the expected minimum distance between the compound eye elements of each view field, judging whether the rearranged compound eye elements of the view fields meet the set requirement at the same time, and if so, determining that the distance between the compound eye elements of each view field on the compound eye of the view field is the optimal distance; if not, go to step S8; wherein the setting requirement includes: each field compound eye element on the field compound eye substrate does not collide with the adjacent field compound eye element, and the number and the position of the field compound eye elements on the field compound eye substrate are the same as those of the field compound eye elements arranged at the last time;
s8: and replacing the field compound eye arranged for the last time with the field compound eye arranged for the second time to execute the steps S1-S7 again until the field compound eye meets the setting requirement at the same time.
Further, in step S61, making the rotated current compound eye element and the adjacent compound eye element in a tangent state specifically includes:
if the position relation between the current compound eye element and the adjacent compound eye element is a collision state, increasing the distance between the current compound eye element and the adjacent compound eye element; if the position relation between the current compound eye element and the adjacent compound eye element is in a separation state, reducing the distance between the current compound eye element and the adjacent compound eye element; and if the position relation between the current compound eye element and the adjacent compound eye element is a tangent state, keeping the distance between the current compound eye element and the adjacent compound eye element unchanged.
Further, the performance evaluation and optimization method of the lighting system comprises the following steps:
s9: obtaining uniformity U of illumination spots formed on the mask:
wherein, ImaxIs the maximum value of the integrated value of the light intensity in the scanning direction of the mask, IminIs the minimum value of the integrated value of the light intensity in the scanning direction perpendicular to the mask;
s10: judging whether the uniformity U is larger than a set threshold value, if so, determining that the current illumination system is the optimal illumination system which is most matched with the projection lithography objective system; if not, go to step S11;
s11: according to the entrance pupil parameters of the projection lithography objective system, the curvature radius of the first relay lens and the curvature radius of the second relay lens and the distance between the first relay lens and the second relay lens are adjusted in a reverse light path of the current illumination system by adopting a matrix optical method, wherein the entrance pupil parameters comprise the size, the position and the shape of an entrance pupil;
s12: respectively fitting the adjusted first relay lens and the second relay lens into off-axis quadric surfaces by adopting a quadric surface fitting method, and updating the curvature radius of the field of view compound eye and the diaphragm compound eye and the distance between the field of view compound eye and the diaphragm compound eye according to the conjugate relation of a mask-field of view compound eye and an illumination exit pupil-diaphragm compound eye required by an illumination system in a reverse light path of the illumination system formed by the off-axis quadric surfaces;
s13: the updated illumination system formed by the first relay lens, the second relay lens, the field compound eye and the diaphragm compound eye is used as a reconstruction illumination system, and the alignment matching relationship between each field compound eye element and each diaphragm compound eye element participating in illumination in the reconstruction illumination system and the distance between each row of field compound eye elements on the field compound eye are determined again according to the alignment matching method and the distance setting method, so that the reconstruction field compound eye is obtained;
s14: and (5) re-executing the steps S9-S10 on the illumination light spots formed on the mask corresponding to the reconstructed field-of-view compound eye until the uniformity U is greater than a set threshold value, so as to obtain an optimal illumination system.
Further, the step S12 of fitting the adjusted first relay lens and the second relay lens to the off-axis quadric surface by using a quadric surface fitting method specifically includes:
s101: by real ray tracing emitted by the light source module, taking the intersection point of a main ray and a pupil plane as a first focus F11 of the off-axis quadric surface corresponding to the second relay lens, taking the intersection point of the main ray and the second relay lens as a point A1 on the off-axis quadric surface corresponding to the second relay lens, taking the pupil plane as a second focus F12 of the off-axis quadric surface corresponding to the second relay lens through the image plane of the second relay lens, and fitting the second relay lens into the off-axis quadric surface according to the positions of A1, focus F11 and focus F12;
s102: and tracking the real light rays emitted by the light source module, taking the intersection point of the mask surface passing through the image surface of the second relay lens and the principal ray as a first focus F21 of the off-axis quadric surface corresponding to the first relay lens, taking the intersection point of the principal ray and the first relay lens as a point A2 on the off-axis quadric surface corresponding to the first relay lens, taking the mask surface passing through the image surfaces of the two relay lenses as a second focus F22, and fitting the first relay lens into the off-axis quadric surface according to the positions of the A2, the focus F21 and the focus F22.
Further, the set illumination modes are a conventional illumination mode, a ring illumination mode, a dipole illumination mode, a quadrupole illumination mode, a leaf illumination mode, and a Freeform illumination mode.
Has the advantages that:
1. the invention provides an ultra-high numerical aperture combined variable-magnification extreme ultraviolet lithography illumination system, which is characterized in that when a field compound eye and a diaphragm compound eye alignment matching relationship is established, the light spot inclination amount and the center deviation of illumination light spots formed by illumination channels of different compound eye pairs relative to expected light spots are considered, and the alignment matching problem of double-row compound eye elements can be completed more efficiently; therefore, the method adopts a combined optimization algorithm for simultaneously considering rotation and offset of illumination light spots of illumination channels by different compound eyes, can efficiently complete construction of the alignment matching relationship between the field-of-view compound eyes and the diaphragm compound eyes, further can realize pupil matching with a combined variable-magnification projection lithography objective, and can quickly realize various off-axis illumination modes by adjusting the alignment matching relationship of double rows of compound eyes; meanwhile, high illumination uniformity can be realized on the mask surface under different off-axis illumination modes, the design requirement of an extreme ultraviolet lithography illumination system is met, and the system can be used in an ultrahigh numerical aperture (NA >0.40) combined variable-magnification extreme ultraviolet lithography objective system.
2. The invention provides an ultrahigh numerical aperture combined variable-magnification extreme ultraviolet lithography illumination system, and provides a field-of-view compound eye rotation expected spacing calculation model for realizing calculation of expected spacing between different compound eye elements.
3. The invention provides an ultrahigh numerical aperture combined variable-magnification extreme ultraviolet lithography illumination system, which aims to solve the collision problem of compound eyes of adjacent fields of an illumination system of an extreme ultraviolet lithography objective lens, and provides an automatic arrangement algorithm of the compound eyes of the fields of the illumination system.
4. The invention provides an ultrahigh numerical aperture combined variable-magnification extreme ultraviolet lithography illumination system, which is characterized in that a relay lens group is fitted into an off-axis quadric surface in a reverse light path according to the imaging characteristics of the relay lens group by adopting a quadric surface fitting algorithm according to the connecting pupil of an illumination objective lens, so that the aberration of the relay lens group can be effectively reduced, and the problem of overlarge aberration of the relay lens group is solved.
Drawings
FIG. 1 is a schematic view of a combined variable-magnification EUV lithography exposure system according to the present invention;
FIG. 2 is a schematic diagram illustrating the calculation of the expected minimum spacing for the compound eye rotation of the field of view in accordance with an embodiment of the present invention;
FIG. 3 is a schematic diagram of quadratic surface fitting of a combined variable magnification lighting system according to an embodiment of the present invention;
FIG. 4 is an optical diagram of a combined variable magnification lighting system according to an embodiment of the present invention;
FIG. 5 is an entrance pupil diagram of a combined variable power objective system in accordance with an embodiment of the present invention;
fig. 6 is a compound eye structure diagram of the field of view of the combined variable magnification lighting system under different lighting modes in the embodiment of the invention.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
The ultra-high numerical aperture combined variable-magnification extreme ultraviolet lithography illumination system related to the embodiment is composed of a light source module, double rows of compound eyes (field-of-view compound eyes and diaphragm compound eyes) and two pieces of reflective relay lenses (R1 and R2), and the combined variable-magnification projection lithography objective system is composed of a plurality of reflectors. The structure schematic diagram is shown in figure 1.
The working process of the extreme ultraviolet projection photoetching exposure system related to the embodiment is as follows: light rays emitted by the LPP light source are collected by the ellipsoidal collecting mirror, converged at the intermediate focus IF point and then incident to the double-row compound eyes, after shaping and light homogenizing by the double-row compound eyes, an illumination light spot which is consistent with the object space view field shape and size of a subsequent projection objective system and has high uniformity is formed on the mask surface through the relay lens group, and the reflective mask is illuminated by the illumination system and then imaged on a silicon wafer by the subsequent projection photoetching objective system.
Aiming at the ultra-high NA combined variable-magnification extreme ultraviolet projection photoetching objective lens, the design of an extreme ultraviolet double-row compound eye illumination system matched with the combined variable-magnification objective lens system is carried out. The extreme ultraviolet double-row compound eye illumination system is an off-axis total reflection type optical system, light emitted by a light source module sequentially passes through a field compound eye, a diaphragm compound eye and a relay lens group along a forward light path, and finally reaches an image surface of the illumination system, namely a mask surface.
The photoetching illumination system must be connected with the objective system through pupil matching to ensure that the illumination light beams can completely enter the subsequent objective system, so that the shape, size and position of the exit pupil of the illumination system and the entrance pupil of the objective system must be consistent, in view of the characteristics, the design of the illumination system adopts the idea of reverse design, namely the illumination system is designed by taking the exit pupil of the illumination system as a starting point, and the specific design flow of the illumination system is as follows: determining the entrance pupil parameters of a combined variable magnification projection lithography objective system to be matched, wherein the exit pupil parameters of the illumination system are known as the illumination exit pupil is matched with the entrance pupil of the objective lens; according to the obtained pupil parameters, firstly completing the design of two reflecting relay lens groups in a reverse light path, then completing the design of a diaphragm compound eye PF and a field compound eye FF according to the conjugate relation of a mask surface, a field compound eye and an illuminating exit pupil and the diaphragm compound eye of an illuminating system, completing the design of the reverse light path of the illuminating system, and converting the designed reverse light path of the illuminating system into a forward light path according to a light path reversible principle to complete the design of the forward light path of the illuminating system; then, according to the required illumination mode, solving the alignment matching relation of the double rows of compound eyes in the illumination mode through a combined optimization algorithm, and solving a reasonable field-of-view compound eye element arrangement mode by using an automatic arrangement algorithm according to the inclination angle of the double rows of compound eyes; and finally, according to the existing forward light path, the double-row compound eye alignment matching relation and the solved field-of-view compound eye arrangement, constructing an illumination system simulation model in illumination simulation software, and evaluating the illumination uniformity of the illumination system on the mask surface.
That is to say, the emergent light of the ultra-high numerical aperture combined variable-magnification extreme ultraviolet lithography illumination system provided by the invention forms an illumination light spot on the mask, the emergent light enters the projection lithography objective system through the mask, and the projection lithography objective system images the pattern of the mask onto the silicon wafer. Specifically, the alignment matching method of each field compound eye element on the field compound eye and each diaphragm compound eye element on the diaphragm compound eye comprises the following steps:
s1: and under a set illumination mode, acquiring the number of diaphragm compound eye elements participating in illumination and the positions of the diaphragm compound eye elements participating in illumination, wherein the number of the diaphragm compound eye elements participating in illumination is the same as the number of the field compound eye elements contained in the field compound eye.
Alternatively, the set illumination mode may be a conventional illumination mode, a ring illumination mode, a dipole illumination mode, a quadrupole illumination mode, a leaf illumination mode, a Freeform illumination mode, or the like.
S2: respectively taking the compound eye elements of each view field as the compound eye elements of the current view field to execute charge acquisition operation to obtain the pairing cost between the compound eye elements of each view field and the diaphragm compound eye elements participating in illumination, wherein the charge acquisition operation is as follows:
s21: respectively forming different compound eye pairs by the current field compound eye elements and the diaphragm compound eye elements participating in illumination;
s22: respectively obtaining the pairing Cost of each compound eye pair:
Cost＝Angleori+ω×Lengthden
wherein, AngleoriAnd LengthdenThe main light emitted by the light source module passes through the compound eye pair, the first relay lens and the second relay lens respectively, and then the light spot inclination amount and the center offset between the illumination light spot formed on the mask and the expected light spot are formed, wherein omega is set weight.
S3: and according to the cost matrix, acquiring the pairing total cost corresponding to all possible pairing schemes between the field-of-view compound eye elements and the diaphragm compound eye elements participating in illumination, wherein in each possible pairing scheme, the field-of-view compound eye elements correspond to the diaphragm compound eye elements participating in illumination one by one.
S4: and taking the one-to-one pairing relation between each field compound eye element and each diaphragm compound eye element participating in illumination in the pairing scheme corresponding to the minimum pairing total cost as a final alignment matching relation.
Therefore, the method can use the combination optimization algorithm of the alignment matching relationship of the field-of-view compound eye and the diaphragm compound eye according to different lighting modes, and efficiently select the alignment of different compound eye elements.
Further, fig. 2 shows a calculation model of the rotation expected spacing of the compound eye in the field of view, which can quickly and accurately calculate the expected spacing between compound eye elements in adjacent fields of view; it should be noted that fig. 2 shows a calculation model of adjacent distances between upper and lower compound eye elements in the YOZ plane, and the calculation model of adjacent distances between compound eye elements in the XOZ plane and the XOY plane is similar to the calculation model, and is not described in detail in this embodiment.
Specifically, the compound eye cells of each field of view on the compound eye of the field of view form a compound eye cell array with multiple rows and multiple columns, and the compound eye cells of each field of view are parallel to each other, and meanwhile, the distance setting method between the compound eye cells of each field of view on the compound eye of the field of view is as follows:
s5: and acquiring the rotation angle of each field compound eye element by adopting an optical reflection law based on the alignment matching relationship between each field compound eye element and each diaphragm compound eye element participating in illumination.
S6: sequentially taking the compound eye elements of each line of the view field as the current line to execute a distance obtaining operation to obtain an expected minimum distance between the compound eye elements of the view field of the current line and the compound eye elements of the view field of the next line, wherein the distance obtaining operation is as follows:
s61: under the current interval, sequentially executing angle rotation operation by taking each field compound eye element in the current line as the current compound eye element to obtain the minimum interval between the current compound eye element and the adjacent compound eye element, wherein the adjacent compound eye element is the compound eye element adjacent to the current compound eye element in the field compound eye elements in the next line, when the angle rotation operation is executed for the first time, the current interval is a set initial value, and meanwhile, the angle rotation operation is as follows:
the method comprises the steps of taking a current compound eye element and an adjacent compound eye element which are parallel to each other as an initial state, rotating the current compound eye element and the adjacent compound eye element by a to-be-rotated angle alpha, and rotating the compound eye element with a larger rotation angle in the current compound eye element and the adjacent compound eye element by a relative rotation angle delta alpha, wherein the to-be-rotated angle alpha is a smaller value of rotation angles corresponding to the current compound eye element and the adjacent compound eye element, and the relative rotation angle delta alpha is a difference value between a larger value of the rotation angles corresponding to the current compound eye element and the adjacent compound eye element and the to-be-rotated angle alpha.
And enabling the rotated current compound eye element and the adjacent compound eye element to be in a tangent state, wherein the distance between the rotated current compound eye element and the adjacent compound eye element is the minimum distance between the rotated current compound eye element and the adjacent compound eye element.
It should be noted that, making the rotated current compound eye element and the adjacent compound eye element in a tangent state specifically includes: if the position relation between the current compound eye element and the adjacent compound eye element is a collision state, increasing the distance between the current compound eye element and the adjacent compound eye element; if the position relation between the current compound eye element and the adjacent compound eye element is in a separation state, reducing the distance between the current compound eye element and the adjacent compound eye element; and if the position relation between the current compound eye element and the adjacent compound eye element is a tangent state, keeping the distance between the current compound eye element and the adjacent compound eye element unchanged.
S62: and taking the maximum value of the minimum distance between each field-of-view compound eye element in the current row and each corresponding adjacent compound eye element as the expected minimum distance between the field-of-view compound eye element in the current row and the field-of-view compound eye element in the next row.
S7: rearranging the compound eye elements of each view field according to the expected minimum distance between the compound eye elements of each view field, judging whether the rearranged compound eye elements of the view fields meet the set requirement at the same time, and if so, determining that the distance between the compound eye elements of each view field on the compound eye of the view field is the optimal distance; if not, go to step S8; wherein the setting requirement includes: each visual field compound eye element on the visual field compound eye substrate does not collide with the adjacent visual field compound eye element, and the number and the position of the visual field compound eye elements on the visual field compound eye substrate are the same as those arranged at the last time.
S8: and replacing the field compound eye arranged for the last time with the field compound eye arranged for the second time to execute the steps S1-S7 again until the field compound eye meets the setting requirement at the same time.
Further, the performance evaluation and optimization method of the lighting system comprises the following steps:
s9: obtaining uniformity U of illumination spots formed on the mask:
wherein, ImaxIs the maximum value of the integrated value of the light intensity in the scanning direction of the mask, IminIs perpendicular to the scanning direction of the maskMinimum value of integrated value of upper light intensity.
S10: judging whether the uniformity U is larger than a set threshold value, if so, determining that the current illumination system is the optimal illumination system which is most matched with the projection lithography objective system; if not, the process proceeds to step S11.
S11: and adjusting the curvature radius of the first relay lens and the second relay lens and the distance between the first relay lens and the second relay lens in a reverse light path of the current illumination system by adopting a matrix optical method according to the entrance pupil parameters of the projection lithography objective lens system, wherein the entrance pupil parameters comprise the size, the position and the shape of an entrance pupil. Optionally, the entrance pupil of the combined variable magnification lithography objective lens system of the present embodiment has an elliptical shape, and the ratio of the major axis to the minor axis is about 2: 1.
s12: and respectively fitting the adjusted first relay lens and the second relay lens into off-axis quadric surfaces by adopting a quadric surface fitting method, and updating the curvature radius of the field of view compound eye and the diaphragm compound eye and the distance between the field of view compound eye and the diaphragm compound eye according to the conjugate relation of the mask-field of view compound eye and the illumination exit pupil-diaphragm compound eye required by the illumination system in a reverse light path of the illumination system formed by the off-axis quadric surfaces.
S13: and taking the illumination system formed by the updated first relay lens, the second relay lens, the field compound eye and the diaphragm compound eye as a reconstruction illumination system, and re-determining the alignment matching relationship between each field compound eye element and each diaphragm compound eye element participating in illumination in the reconstruction illumination system and the distance between each row of field compound eye elements on the field compound eye according to the alignment matching method and the distance setting method to obtain the reconstruction field compound eye.
That is, according to the principle that the light path is reversible, the reverse light path of the designed illumination system is converted into the forward light path, and the design of the forward light path of the illumination system is completed.
S14: and (5) re-executing the steps S9-S10 on the illumination light spots formed on the mask corresponding to the reconstructed field-of-view compound eye until the uniformity U is greater than a set threshold value, so as to obtain an optimal illumination system.
Therefore, according to the calculated expected minimum distance of each field compound eye element, the invention uses the automatic arrangement method of the field compound eyes of the extreme ultraviolet lithography illumination system to complete the arrangement iteration; judging whether each arrangement simultaneously meets the set requirement, if not, recalculating the alignment mode and the ideal arrangement mode of the double rows of compound eye elements according to the existing arrangement until the arrangement of the compound eye of the view field meets the requirement; and finally, constructing a lighting system simulation model in lighting simulation software, evaluating the lighting uniformity of the lighting system on the mask surface, reconstructing double rows of compound eyes of the relay lens combination if the lighting uniformity does not meet the design requirements, and otherwise, keeping the current system as the design result.
It should be noted that, in the reverse optical path of the illumination system, the present invention designs the relay lens group according to the entrance pupil parameters of the objective lens system. Firstly, calculating structural parameters of two coaxial spherical relay lenses in a reverse light path of an illumination system through matrix optics according to obtained entrance pupil parameters of a projection lithography objective lens system, and constructing an initial structure of two anti-coaxial spherical relay lens sets; then, eliminating light path blocking to obtain two off-axis spherical relay lens groups; finally, in order to further reduce the aberration of the spherical relay lens group, fitting the off-axis spherical relay lens group into a quadric surface relay lens group, as shown in fig. 3, in step S12, fitting the adjusted first relay lens and second relay lens into off-axis quadric surfaces respectively by using a quadric surface fitting method specifically includes:
s101: and tracking the real light rays emitted by the light source module, taking the intersection point of the main light ray and the pupil plane as a first focus F11 of the off-axis quadric surface corresponding to the second relay lens, taking the intersection point of the main light ray and the second relay lens as a point A1 on the off-axis quadric surface corresponding to the second relay lens, taking the pupil plane as a second focus F12 of the off-axis quadric surface corresponding to the second relay lens through the image plane of the second relay lens, and fitting the second relay lens into the off-axis quadric surface according to the positions of A1, focus F11 and focus F12.
S102: and tracking the real light rays emitted by the light source module, taking the intersection point of the mask surface passing through the image surface of the second relay lens and the principal ray as a first focus F21 of the off-axis quadric surface corresponding to the first relay lens, taking the intersection point of the principal ray and the first relay lens as a point A2 on the off-axis quadric surface corresponding to the first relay lens, taking the mask surface passing through the image surfaces of the two relay lenses as a second focus F22, and fitting the first relay lens into the off-axis quadric surface according to the positions of the A2, the focus F21 and the focus F22.
Therefore, the invention provides an automatic arrangement method of field compound eyes of an extreme ultraviolet lithography illumination system for solving the collision problem of adjacent field compound eyes of the illumination system of an extreme ultraviolet lithography objective lens, which can calculate the optimal arrangement of field compound eye elements under different illumination modes, avoid collision between each field compound eye element and the adjacent field compound eye element in the process of angle adjustment, and realize high illumination uniformity, and comprises the following steps:
calculating the alignment matching relationship between the compound eye of the field of view and the compound eye of the diaphragm in a given illumination mode by using a combined optimization algorithm according to given initial arrangement;
calculating an expected minimum distance between each two adjacent field compound eye elements according to the established field compound eye expected distance calculation model;
determining the arrangement of the compound eye elements with different line spacing in each lighting mode according to the expected minimum spacing of the compound eye elements;
and step four, judging whether the arrangement of the compound eye elements of the view fields is qualified, if not, repeating the step one to the step three until the arrangement of the compound eye elements of the view fields meets the requirement, namely, the compound eye elements of each view field do not collide with the adjacent compound eye elements after rotating.
Based on the above design scheme, a set of illumination system matched with the NA0.60 combined variable-magnification euv lithography objective lens is designed and completed in this embodiment, and the structure is as shown in fig. 4.
For a set of NA0.60 combined variable-magnification extreme ultraviolet photoetching objective lens system, an illumination system matched with the objective lens system is designed. The lithography illumination system and the objective system must be linked by pupil matching to ensure that the illumination beam can completely enter the subsequent objective system, so the entrance pupils of different fields of view of the combined variable power objective system must be consistent. The entrance pupil diagram of the combined variable magnification projection lithography objective system is shown in fig. 5.
The double-row compound eye dodging off-axis illumination system matched with the NA0.60 combined variable-magnification extreme ultraviolet projection photoetching objective lens in the embodiment is a total reflection type optical system and comprises a light source, an ellipsoid collecting mirror, double-row compound eyes (field compound eyes and diaphragm compound eyes) and two reflection type relay lenses (R1 and R2), as shown in the attached figure 4. The specific working process is as follows: light rays emitted by the LPP light source are collected by the ellipsoid collecting mirror, are converged at the IF point and then enter the double-row compound eye, wide light beams from the light source enter the double-row compound eye and then are divided into a plurality of thin light beams by the double-row compound eye, and each thin light beam is transmitted in a corresponding optical channel. The beamlets are imaged by the field compound eyes to the positions near the corresponding diaphragm compound eyes in any light channel to form an intermediate image of the light source, namely a secondary light source, the intermediate image is imaged on the exit pupil surface of the illumination system by the relay lens group, meanwhile, the field compound eyes are imaged on the illuminated surface by the corresponding diaphragm compound eyes and the relay lens group, and a high-uniformity illumination light spot is formed on the mask surface.
The relay lens R1 of the illumination system matched with the NA0.60 combined variable-magnification extreme ultraviolet projection photoetching objective lens is an ellipsoidal reflector, the relay lens R2 is a hyperboloid reflector, the field compound eye element and the diaphragm compound eye element are spherical reflectors, the specific position coordinates and the specific inclination angle of each element are shown in table 1, and the surface type parameter data of each element are shown in table 2.
TABLE 1 NA0.60 position and Tilt of optical elements in illumination System
TABLE 2 NA0.60 surface type parameters of optical elements in the illumination System
The reasonable field-of-view compound eye element arrangement is solved for four illumination modes (annular illumination, dipolar illumination, quadrupole illumination and leaf illumination) by using the field-of-view compound eye automatic arrangement design method, and the arrangement is shown in the attached figure 6. Modeling the calculated field compound eye arrangement and the basic structure of the illumination system under various off-axis illumination modes in optical design software, performing uniformity simulation by using Monte Carlo ray pursuit, and evaluating the illumination uniformity of the illumination system according to a uniformity calculation formula according to a simulation result.
In summary, the ultra-high NA combined variable-magnification euv lithography illumination system of the embodiment can realize light uniformization through the double-row compound eyes and realize multiple off-axis illumination modes by adjusting the alignment matching relationship of the double-row compound eyes, and form an illumination spot uniform illumination mask surface with a uniform illumination uniformity on the mask surface, which has a same size as the field shape of the subsequent objective system and a high illumination uniformity, through the relay lens group and pupil matching of the subsequent projection objective system, thereby meeting the lithography technical requirements and being applicable to higher lithography technology nodes.
The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it will be understood by those skilled in the art that various changes and modifications may be made herein without departing from the spirit and scope of the invention as defined in the appended claims.
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| CN108713168A (en) * | 2016-03-10 | 2018-10-26 | 卡尔蔡司Smt有限责任公司 | Manufacture the method and lighting system of the lighting system of EUV projection exposure systems |
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