CN112202419B - Three-frequency negative group delay microwave circuit - Google Patents
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Abstract
Description
技术领域Technical field
本发明涉及微波电路设计技术领域，尤其涉及一种三频负群时延微波电路。The invention relates to the technical field of microwave circuit design, and in particular to a three-frequency negative group delay microwave circuit.
背景技术Background technique
现代无线通信正朝着多功能和多频带方向发展，许多无线电系统标准都要求支持多频带的工作模式，这就需要使用多频微波电路以减小系统的尺寸、重量和成本，因此多频负群时延微波电路的研究具有重要的意义。第一个双频负群时延微波电路由四分之一波长的复合左右手传输线构成，设计较为复杂。之后产生了一种有源双频负群时延电路，补偿了信号的衰减。为了减小尺寸，许多学者提出了小型化的电路结构。但是这些负群时延微波电路仅能实现双频带特性，仅可以代替两个单频带电路。为了满足三频带系统的应用需求和进一步减少电路尺寸，有必要对三频负群时延微波电路进行探究。目前，已有的三频负群时延微波电路是将三个工作在不同频率的负群时延单元进行简单组合的方式构成的，无法保证三个频带输入输出端口阻抗都匹配的条件下，实现相同的负群时延值，且工作频率比可实现范围较小，不能覆盖实际的无线电系统工作频带。有鉴于此，确有必要提出一种满足多频无线电系统应用的三频负群时延微波电路。Modern wireless communications are developing in the direction of multi-function and multi-band. Many radio system standards require support of multi-band operating modes, which requires the use of multi-frequency microwave circuits to reduce the size, weight and cost of the system. Therefore, multi-frequency load The study of group delay microwave circuits is of great significance. The first dual-frequency negative group delay microwave circuit was composed of a quarter-wavelength composite left- and right-hand transmission line, and the design was relatively complex. Later, an active dual-frequency negative group delay circuit was produced to compensate for the attenuation of the signal. In order to reduce the size, many scholars have proposed miniaturized circuit structures. However, these negative group delay microwave circuits can only achieve dual-band characteristics and can only replace two single-band circuits. In order to meet the application requirements of three-band systems and further reduce circuit size, it is necessary to explore three-band negative group delay microwave circuits. At present, the existing three-frequency negative group delay microwave circuit is composed of a simple combination of three negative group delay units working at different frequencies. It cannot guarantee that the impedances of the input and output ports of the three frequency bands match. To achieve the same negative group delay value, the operating frequency ratio is smaller than the achievable range and cannot cover the actual radio system operating frequency band. In view of this, it is indeed necessary to propose a three-frequency negative group delay microwave circuit that meets the application of multi-frequency radio systems.
发明内容Contents of the invention
基于此，为解决现有技术存在的不足，特提出了一种满足多频无线电系统应用的三频负群时延微波电路。Based on this, in order to solve the shortcomings of the existing technology, a three-frequency negative group delay microwave circuit that meets the application of multi-frequency radio systems is proposed.
基于上述目的，本发明的技术方案是：Based on the above objectives, the technical solution of the present invention is:
一种三频负群时延微波电路，其特征在于，包括：输入端口、微带线、输出端口、吸收电阻、匹配电阻和并联单元；所述微带线包括位于所述匹配电阻两侧的输入微带线和输出微带线，所述输入端口通过输入微带线经匹配电阻与输出微带线连接，之后与输出端口连接构成上支路；所述吸收电阻包括串联的第一吸收电阻和第二吸收电阻，所述输入端口连接所述第一吸收电阻，其与并联单元并联后与所述第二吸收电阻连接后与所述输出端口连接构成下支路；所述并联单元位于第一吸收电阻和第二吸收电阻之间，其包括串联的第一传输线、第二传输线和第三传输。A three-frequency negative group delay microwave circuit, which is characterized in that it includes: an input port, a microstrip line, an output port, an absorption resistor, a matching resistor and a parallel unit; the microstrip line includes: located on both sides of the matching resistor Input microstrip line and output microstrip line, the input port is connected to the output microstrip line through the input microstrip line through a matching resistor, and then connected to the output port to form an upper branch; the absorption resistor includes a first absorption resistor connected in series and a second absorption resistor, the input port is connected to the first absorption resistor, which is connected in parallel with the parallel unit and connected with the second absorption resistor and then connected with the output port to form a lower branch; the parallel unit is located at the Between an absorption resistor and a second absorption resistor, it includes a first transmission line, a second transmission line and a third transmission line in series.
可选的，在其中一个实施例中，所述第一传输线、第二传输线和第三传输线的长度都为第二工作频率所对应波长的四分之一，所述第二工作频率按照实际需求给定。Optionally, in one embodiment, the lengths of the first transmission line, the second transmission line and the third transmission line are all one quarter of the wavelength corresponding to the second operating frequency, and the second operating frequency is determined according to actual requirements. given.
可选的，在其中一个实施例中，所述输入微带线和输出微带线的长度都为第二工作频率所对应波长的二分之一。Optionally, in one embodiment, the lengths of the input microstrip line and the output microstrip line are both half of the wavelength corresponding to the second operating frequency.
可选的，在其中一个实施例中，所述三频负群时延微波电路的传输系数S21的计算公式为：Optionally, in one embodiment, the calculation formula of the transmission coefficient S 21 of the three-frequency negative group delay microwave circuit is:
所述三频负群时延微波电路的群时延τ的计算公式为：The calculation formula of the group delay τ of the three-frequency negative group delay microwave circuit is:
其中，X1＝Y0(a1-a3) (3)Among them, X 1 =Y 0 (a 1 -a 3 ) (3)
X2＝Y0(a2-a4) (4)X 2 =Y 0 (a 2 -a 4 ) (4)
X3＝(Y0+a1)(Y0+a3)-a2a4 (5)X 3 =(Y 0 +a 1 )(Y 0 +a 3 )-a 2 a 4 (5)
X4＝a2(Y0+a3)+a4(Y0+a1) (6)X 4 =a 2 (Y 0 +a 3 )+a 4 (Y 0 +a 1 ) (6)
X′1＝Y0(a′1-a′3) (7)X′ 1 ＝Y 0 (a′ 1 -a′ 3 ) (7)
X′2＝Y0(a′2-a′4) (8)X′ 2 =Y 0 (a′ 2 -a′ 4 ) (8)
X′3＝Y0(a′1+a′3)+a′1a3+a1a′3-a′2a4-a2a′4 (9)X′ 3 =Y 0 (a′ 1 +a′ 3 )+a′ 1 a 3 +a 1 a′ 3 -a′ 2 a 4 -a 2 a′ 4 (9)
X′4＝Y0(a′2+a′4)+a′2a3+a2a′3+a′1a4+a1a′4 (10)X′ 4 =Y 0 (a′ 2 +a′ 4 )+a′ 2 a 3 +a 2 a′ 3 +a′ 1 a 4 +a 1 a′ 4 (10)
Z′in＝z1(P-Q)/[z1(z2+z3cot(θ3)tan(θ2))+z2(z3cot(θ3)-z2tan(θ2))tan(θ1)]2 (20)Z′ in =z 1 (PQ)/[z 1 (z 2 +z 3 cot(θ 3 )tan(θ 2 ))+z 2 (z 3 cot(θ 3 )-z 2 tan(θ 2 )) tan(θ 1 )] 2 (20)
其中，z1、τ1和θ1分别为第一传输线的特性阻抗、群时延值和电长度，z2、τ2和θ2分别为第二传输线的特性阻抗、群时延值和电长度，z3、τ3和θ3分别为第三传输线的特性阻抗、群时延值和电长度，r1为吸收电阻的电阻值，z4、τ4和θ4分别为微带线的特性阻抗、群时延值和电长度，r2为匹配电阻的电阻值，Y0为端口导纳。Among them, z 1 , τ 1 and θ 1 are the characteristic impedance, group delay value and electrical length of the first transmission line respectively, z 2 , τ 2 and θ 2 are the characteristic impedance, group delay value and electrical length of the second transmission line respectively. Length, z 3 , τ 3 and θ 3 are the characteristic impedance, group delay value and electrical length of the third transmission line respectively, r 1 is the resistance value of the absorption resistor, z 4 , τ 4 and θ 4 are the resistance of the microstrip line respectively. Characteristic impedance, group delay value and electrical length, r 2 is the resistance value of the matching resistor, Y 0 is the port admittance.
实施本发明实施例，将具有如下有益效果：Implementing the embodiments of the present invention will have the following beneficial effects:
本发明提供了一种满足多频无线电系统应用的三频负群时延微波电路，解决了现有技术中无法同时实现输入输出阻抗匹配和工作频率比不可以任意改变的矛盾问题，本发明的三频负群时延微波电路能够实现三频带的负群时延特性，而且具有工作频率比任意、输入输出端口阻抗匹配良好等特点，其在第二工作频率确定的条件下，第三工作频率和第一工作频率之比值的可实现范围可达3.4～11.2，且各负群时延频带内回波损耗均可达到12dB以上。The present invention provides a three-frequency negative group delay microwave circuit that satisfies the application of multi-frequency radio systems, and solves the contradictory problems in the prior art that the input and output impedance matching cannot be simultaneously achieved and the operating frequency ratio cannot be changed arbitrarily. The three-frequency negative group delay microwave circuit can realize the negative group delay characteristics of the three frequency bands, and has the characteristics of arbitrary operating frequency ratio and good input and output port impedance matching. Under the condition that the second operating frequency is determined, the third operating frequency The achievable range of the ratio to the first operating frequency can reach 3.4 to 11.2, and the return loss in each negative group delay frequency band can reach more than 12dB.
附图说明Description of the drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are only These are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without exerting creative efforts.
其中：in:
图1是本发明一种三频负群时延微波电路的原理图；Figure 1 is a schematic diagram of a three-frequency negative group delay microwave circuit of the present invention;
图2是本发明一种三频负群时延微波电路的群时延曲线图；Figure 2 is a group delay curve diagram of a three-frequency negative group delay microwave circuit of the present invention;
图3是本发明一种三频负群时延微波电路的S参数曲线图；Figure 3 is an S-parameter curve diagram of a three-frequency negative group delay microwave circuit of the present invention;
图中：1、并联单元，11、第一传输线，12、第二传输线，13、第三传输线，2、吸收电阻，21、第一吸收电阻，22、第二吸收电阻，3、微带线，31、输入微带线，32、输出微带线，4、匹配电阻，5、输入端口，6、输出端口。In the figure: 1. Parallel unit, 11. First transmission line, 12. Second transmission line, 13. Third transmission line, 2. Absorption resistor, 21. First absorption resistor, 22. Second absorption resistor, 3. Microstrip line , 31. Input microstrip line, 32. Output microstrip line, 4. Matching resistor, 5. Input port, 6. Output port.
具体实施方式Detailed ways
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention and are not intended to limit the present invention.
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在限制本发明。可以理解，本发明所使用的术语“第一”、“第二”等可在本文中用于描述各种元件，但这些元件不受这些术语限制。这些术语仅用于将第一个元件与另一个元件区分。举例来说，在不脱离本申请的范围的情况下，可以将第一元件称为第二元件，且类似地，可将第二元件为第一元件。第一元件和第二元件两者都是元件，但其不是同一元件。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which the invention belongs. The terminology used herein in the description of the invention is for the purpose of describing specific embodiments only and is not intended to limit the invention. It will be understood that the terms "first", "second", etc. used in the present invention may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the application. The first element and the second element are both elements, but they are not the same element.
在本实施例中，特提出了一种三频负群时延微波电路，如图1所示，其特征在于包括：输入端口5、微带线3、输出端口6、吸收电阻2、匹配电阻4和并联单元1；所述微带线3包括位于所述匹配电阻4两侧的输入微带线31和输出微带线32，所述输入端口5通过输入微带线31经匹配电阻4与输出微带线32连接，之后与输出端口6连接构成上支路；所述吸收电阻2包括串联的第一吸收电阻21和第二吸收电阻22，所述输入端口5连接所述第一吸收电阻21与并联单元1并联后与所述第二吸收电阻22连接后与所述输出端口6连接构成下支路；所述并联单元1位于第一吸收电阻21和第二吸收电阻22之间，其包括串联的第一传输线11、第二传输线12和第三传输线13。In this embodiment, a three-frequency negative group delay microwave circuit is proposed, as shown in Figure 1, which is characterized by including: input port 5, microstrip line 3, output port 6, absorption resistor 2, matching resistor 4 and parallel unit 1; the microstrip line 3 includes an input microstrip line 31 and an output microstrip line 32 located on both sides of the matching resistor 4. The input port 5 connects to the input microstrip line 31 through the matching resistor 4. The output microstrip line 32 is connected, and then connected to the output port 6 to form an upper branch; the absorption resistor 2 includes a first absorption resistor 21 and a second absorption resistor 22 connected in series, and the input port 5 is connected to the first absorption resistor 21 is connected in parallel with the parallel unit 1 and is connected to the second absorption resistor 22 and then connected to the output port 6 to form a lower branch; the parallel unit 1 is located between the first absorption resistor 21 and the second absorption resistor 22. It includes a first transmission line 11, a second transmission line 12 and a third transmission line 13 connected in series.
在其中一个实施例中，所述第一传输线11、第二传输线12和第三传输线13的长度都为第二工作频率所对应波长的四分之一，所述第二工作频率按照实际需求给定。In one embodiment, the lengths of the first transmission line 11 , the second transmission line 12 and the third transmission line 13 are all one-quarter of the wavelength corresponding to the second operating frequency. The second operating frequency is determined according to actual needs. Certainly.
在其中一个实施例中，所述输入微带线31和输出微带线32的长度都为第二工作频率所对应波长的二分之一。In one embodiment, the lengths of the input microstrip line 31 and the output microstrip line 32 are both half of the wavelength corresponding to the second operating frequency.
在其中一个实施例中，所述三频负群时延微波电路的传输系数S21的计算公式为：In one embodiment, the calculation formula of the transmission coefficient S 21 of the three-frequency negative group delay microwave circuit is:
所述三频负群时延微波电路的群时延τ的计算公式为：The calculation formula of the group delay τ of the three-frequency negative group delay microwave circuit is:
其中，X1＝Y0(a1-a3) (3)Among them, X 1 =Y 0 (a 1 -a 3 ) (3)
X2＝Y0(a2-a4) (4)X 2 =Y 0 (a 2 -a 4 ) (4)
X3＝(Y0+a1)(Y0+a3)-a2a4 (5)X 3 =(Y 0 +a 1 )(Y 0 +a 3 )-a 2 a 4 (5)
X4＝a2(Y0+a3)+a4(Y0+a1) (6)X 4 =a 2 (Y 0 +a 3 )+a 4 (Y 0 +a 1 ) (6)
X′1＝Y0(a′1-a′3) (7)X′ 1 ＝Y 0 (a′ 1 -a′ 3 ) (7)
X′2＝Y0(a′2-a′4) (8)X′ 2 =Y 0 (a′ 2 -a′ 4 ) (8)
X′3＝Y0(a′1+a′3)+a′1a3+a1a′3-a′2a4-a2a′4 (9)X′ 3 =Y 0 (a′ 1 +a′ 3 )+a′ 1 a 3 +a 1 a′ 3 -a′ 2 a 4 -a 2 a′ 4 (9)
X′4＝Y0(a′2+a′4)+a′2a3+a2a′3+a′1a4+a1a′4 (10)X′ 4 =Y 0 (a′ 2 +a′ 4 )+a′ 2 a 3 +a 2 a′ 3 +a′ 1 a 4 +a 1 a′ 4 (10)
Z′in＝z1(P-Q)/[z1(z2+z3cot(θ3)tan(θ2))+z2(z3cot(θ3)-z2tan(θ2))tan(θ1)]2 (20)Z′ in =z 1 (PQ)/[z 1 (z 2 +z 3 cot(θ 3 )tan(θ 2 ))+z 2 (z 3 cot(θ 3 )-z 2 tan(θ 2 )) tan(θ 1 )] 2 (20)
其中，z1、τ1和θ1分别为第一传输线11的特性阻抗、群时延值和电长度，z2、τ2和θ2分别为第二传输线12的特性阻抗、群时延值和电长度，z3、τ3和θ3分别为第三传输线13的特性阻抗、群时延值和电长度，r1为吸收电阻2的电阻值，z4、τ4和θ4分别为微带线3的特性阻抗、群时延值和电长度，r2为匹配电阻4的电阻值，Y0为端口导纳。Among them, z 1 , τ 1 and θ 1 are the characteristic impedance, group delay value and electrical length of the first transmission line 11 respectively, z 2 , τ 2 and θ 2 are the characteristic impedance and group delay value of the second transmission line 12 respectively. and electrical length, z 3 , τ 3 and θ 3 are respectively the characteristic impedance, group delay value and electrical length of the third transmission line 13 , r 1 is the resistance value of the absorption resistor 2 , z 4 , τ 4 and θ 4 are respectively The characteristic impedance, group delay value and electrical length of microstrip line 3, r 2 is the resistance value of matching resistor 4, and Y 0 is the port admittance.
可知，虽然本案在初始设计时所述第一工作频率、第二工作频率和第三工作频率按照实际需求给定即已知三个工作频率时，基于上述设计方案，首先根据第二工作频率确定各传输线的长度后，再调节各传输线的特性阻抗，使第一和第三工作频率移到所需要的工作频率即可使得本电路工作在所需的三个频率处；同时本案所对应的电路结构可以按照实际需求进行工作频率比调节，即在第二工作频率不改变的时候，通过调整各传输线的特性阻抗，改变第一和第三工作频率，进而实现在保证输入输出端口阻抗匹配良好条件下，工作频率比可任意调节，以适合更多的各种三频系统的工作需求。It can be seen that although the first operating frequency, the second operating frequency and the third operating frequency are given according to actual needs in the initial design of this case, that is, when the three operating frequencies are known, based on the above design scheme, first determine based on the second operating frequency After adjusting the length of each transmission line, adjust the characteristic impedance of each transmission line to move the first and third operating frequencies to the required operating frequency, so that the circuit can operate at the required three frequencies; at the same time, the circuit corresponding to this case The structure can adjust the operating frequency ratio according to actual needs. That is, when the second operating frequency does not change, the first and third operating frequencies can be changed by adjusting the characteristic impedance of each transmission line, thereby ensuring good impedance matching conditions for the input and output ports. , the working frequency ratio can be adjusted arbitrarily to suit the working needs of more various three-band systems.
例如，本例通过增大所述第一传输线11和第二传输线12的特性阻抗，减小第三传输线13的特性阻抗，即可以实现减小本电路的第一工作频率同时增大第三工作频率；同时可以通过增大微带线3的特性阻抗，来增大第一工作频率和第三工作频率处的负群时延值。且在第二工作频率给定时，本电路的第三工作频率和第一工作频率之比值的可实现范围是3.4～11.2。For example, in this example, by increasing the characteristic impedance of the first transmission line 11 and the second transmission line 12 and reducing the characteristic impedance of the third transmission line 13, it is possible to reduce the first operating frequency of the circuit while increasing the third operating frequency. frequency; at the same time, the negative group delay value at the first operating frequency and the third operating frequency can be increased by increasing the characteristic impedance of the microstrip line 3. And when the second operating frequency is given, the achievable range of the ratio of the third operating frequency and the first operating frequency of this circuit is 3.4~11.2.
为了对本发明所提供的一种三频负群时延微波电路做进一步说明，下面以本发明技术方案为前提下进行实施的具体实例进行详细说明，但本发明的保护范围不限于下述的实施例，下述实施例中所用方法如无特别说明均为常规方法。In order to further explain the three-frequency negative group delay microwave circuit provided by the present invention, specific examples of implementation based on the technical solution of the present invention will be described in detail below. However, the protection scope of the present invention is not limited to the following implementations. For example, the methods used in the following examples are conventional methods unless otherwise specified.
具体实例(1)：本实例列举所述满足多频无线电系统应用的三频负群时延微波电路在其第一工作频率为1.2GHz、第二工作频率为3.5GHz、第三工作频率为5.8GHz时的情况进行说明。Specific example (1): This example lists the three-frequency negative group delay microwave circuit that meets the application of multi-frequency radio systems when its first operating frequency is 1.2GHz, its second operating frequency is 3.5GHz, and its third operating frequency is 5.8 The situation at GHz will be explained.
如图2所示，本发明所述的三频负群时延微波电路，实验证实其在第一工作频率1.2GHz处的群时延值为-1.08ns，第二工作频率3.5GHz处的群时延值为-1.19ns，第三工作频率5.8GHz处的群时延值为-1.09ns，实现了三频负群时延特性。如图3所示，实验证明在1.2GHz频率处，本发明所述三频负群时延微波电路的信号衰减为16.38dB，输入输出端口的回波损耗达到了16.09dB，并且在1.102GHz～1.251GHz频率范围内输入输出端口的回波损耗大于12.1dB，这说明说明输入输出端口在第一负群时延工作频率范围内获得了良好的匹配性能；在3.5GHz频率处，本发明所述三频负群时延微波电路的信号衰减为24.58dB，输入输出端口的回波损耗达到了17.6dB，并且在3.351GHz～3.652GHz频率范围内输入输出端口的回波损耗大于14.7dB，说明输入输出端口在第二负群时延工作频率范围内也获得了良好的匹配性能；在5.8GHz频率处，本发明所述新型的三频负群时延微波电路的信号衰减为18.9dB，输入输出端口的回波损耗达到了16.4dB，并且在5.694GHz～5.902GHz频率范围内输入输出端口的回波损耗大于13.2dB，说明输入输出端口在第三负群时延工作频率范围内仍获得了良好的匹配性能。As shown in Figure 2, the three-frequency negative group delay microwave circuit of the present invention has been experimentally confirmed to have a group delay value of -1.08ns at the first operating frequency of 1.2GHz, and a group delay value of -1.08ns at the second operating frequency of 3.5GHz. The delay value is -1.19ns, and the group delay value at the third operating frequency of 5.8GHz is -1.09ns, achieving three-frequency negative group delay characteristics. As shown in Figure 3, experiments have proven that at the frequency of 1.2GHz, the signal attenuation of the three-frequency negative group delay microwave circuit of the present invention is 16.38dB, and the return loss of the input and output ports reaches 16.09dB, and at 1.102GHz~ The return loss of the input and output ports in the 1.251GHz frequency range is greater than 12.1dB, which shows that the input and output ports have achieved good matching performance in the first negative group delay operating frequency range; at the 3.5GHz frequency, the present invention The signal attenuation of the three-frequency negative group delay microwave circuit is 24.58dB, the return loss of the input and output ports reaches 17.6dB, and the return loss of the input and output ports in the frequency range of 3.351GHz to 3.652GHz is greater than 14.7dB, indicating that the input The output port also achieves good matching performance in the second negative group delay operating frequency range; at the 5.8GHz frequency, the signal attenuation of the new three-frequency negative group delay microwave circuit of the present invention is 18.9dB, and the input and output The return loss of the port reached 16.4dB, and the return loss of the input and output ports in the frequency range of 5.694GHz to 5.902GHz was greater than 13.2dB, indicating that the input and output ports still achieved good results in the third negative group delay operating frequency range. matching performance.
综上所述，本发明所述的一种三频负群时延微波电路实现了三频负群时延特性，并且在三个负群时延工作频率范围内输入输出端口阻抗匹配都良好，同时本发明的设计电路的方法简单实用等特点，非常适合多频无线电系统的应用。In summary, the three-frequency negative group delay microwave circuit described in the present invention realizes the three-frequency negative group delay characteristics, and the input and output port impedance matching is good within the three negative group delay operating frequency ranges. At the same time, the circuit design method of the present invention is simple and practical, and is very suitable for the application of multi-frequency radio systems.
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。The above-described embodiments only express several implementation modes of the present application, and their descriptions are relatively specific and detailed, but should not be construed as limiting the patent scope of the present application. It should be noted that, for those of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all fall within the protection scope of the present application. Therefore, the protection scope of this patent application should be determined by the appended claims.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1508831A1 (en) * | 2003-08-18 | 2005-02-23 | Agilent Technologies Inc | Travelling-wave electroabsorption modulator with integral impedance matching network |
| WO2014029412A1 (en) * | 2012-08-07 | 2014-02-27 | Telefonaktiebolaget L M Ericsson (Publ) | Device for negative group delay |
| CN103684332A (en) * | 2013-12-30 | 2014-03-26 | 南京理工大学 | Distributed type adjustable negative group time-delay circuit |
| KR20150126493A (en) * | 2014-05-02 | 2015-11-12 | 세원텔레텍 주식회사 | Negative Group Delay Filters |
| CN110266284A (en) * | 2019-06-27 | 2019-09-20 | 大连海事大学 | Double-frequency negative group time delay microwave circuit with low signal attenuation and arbitrary frequency ratio |
| CN110334470A (en) * | 2019-07-17 | 2019-10-15 | 南京信息工程大学 | A Multiband Negative Group Delay Circuit Based on Coupled Lines |
| CN110768642A (en) * | 2019-11-08 | 2020-02-07 | 大连海事大学 | Broadband negative group delay microwave circuit with flat group delay characteristic |
-
2020
- 2020-09-30 CN CN202011066082.1A patent/CN112202419B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1508831A1 (en) * | 2003-08-18 | 2005-02-23 | Agilent Technologies Inc | Travelling-wave electroabsorption modulator with integral impedance matching network |
| WO2014029412A1 (en) * | 2012-08-07 | 2014-02-27 | Telefonaktiebolaget L M Ericsson (Publ) | Device for negative group delay |
| CN103684332A (en) * | 2013-12-30 | 2014-03-26 | 南京理工大学 | Distributed type adjustable negative group time-delay circuit |
| KR20150126493A (en) * | 2014-05-02 | 2015-11-12 | 세원텔레텍 주식회사 | Negative Group Delay Filters |
| CN110266284A (en) * | 2019-06-27 | 2019-09-20 | 大连海事大学 | Double-frequency negative group time delay microwave circuit with low signal attenuation and arbitrary frequency ratio |
| CN110334470A (en) * | 2019-07-17 | 2019-10-15 | 南京信息工程大学 | A Multiband Negative Group Delay Circuit Based on Coupled Lines |
| CN110768642A (en) * | 2019-11-08 | 2020-02-07 | 大连海事大学 | Broadband negative group delay microwave circuit with flat group delay characteristic |
Non-Patent Citations (1)
| Title |
|---|
| Dual-band negative group delay microwave circuit with low signal attenuation and arbitrary frequency ratio;Meng Yuwei;IEEE Access;全文 * |
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