CN112260658B - A kind of Lamb wave resonator and its manufacturing method - Google Patents
A kind of Lamb wave resonator and its manufacturing method Download PDFInfo
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- CN112260658B CN112260658B CN202011112294.9A CN202011112294A CN112260658B CN 112260658 B CN112260658 B CN 112260658B CN 202011112294 A CN202011112294 A CN 202011112294A CN 112260658 B CN112260658 B CN 112260658B
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- 235000019687 Lamb Nutrition 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention provides a lamb wave resonator and a manufacturing method thereof, and is characterized in that the lamb wave resonator comprises: a substrate having a high acoustic impedance; and a piezoelectric layer on which electrodes and bus bars are formed, and a metal layer that is disposed between the piezoelectric layer and the substrate and has a low acoustic impedance with respect to the substrate, wherein a groove extending in a length direction of the electrodes is formed on an upper surface of the piezoelectric layer.
Description
Technical Field
The present invention relates to a Lamb (Lamb) wave resonator and a method of manufacturing the same, and more particularly, to a POI substrate Lamb wave resonator having a high quality factor (Q value) and a method of manufacturing the same.
Background
As a resonator having a specific acoustic characteristic and a resonant structure, a Lamb (Lamb) wave resonator has come to be widely used in recent years for a surface acoustic wave resonator/filter or the like in a device such as a radio frequency front end of a cellular phone. For a lamb wave resonator, parameters such as a Q value, heat dissipation performance, an electromechanical coupling coefficient and the like can deeply influence the performance of the lamb wave resonator.
Disclosure of Invention
Technical problem to be solved by the invention
However, the conventional lamb wave resonator has problems of low Q value and poor heat dissipation performance, which affect the performance and stability of the entire device. Further, the conventional lamb wave resonator has a problem that the pyroelectric effect caused by a temperature change damages the electrodes. In addition, the conventional lamb wave resonator also has a problem that energy such as acoustic wave energy leaks into the substrate and the energy is lost in the substrate.
The present invention has been made in view of the above-described conventional problems, and an object thereof is to provide a lamb wave resonator having a high Q value POI (piezoelectric-On-Insulator) substrate and a method for manufacturing the same.
Technical scheme for solving technical problem
In one embodiment of the present invention which solves the above problems, there is provided a lamb wave resonator comprising:
a substrate having a high acoustic impedance;
a piezoelectric layer on which electrodes and bus bars are formed; and
a metal layer disposed between the piezoelectric layer and the substrate and having a low acoustic impedance relative to the substrate,
wherein a groove extending in a longitudinal direction of the electrode is formed on an upper surface of the piezoelectric layer.
In other embodiments of the present invention, in the lamb wave resonator, the metal layer is formed of one or more of Al, Cu, and W.
In other embodiments of the present invention, in the lamb wave resonator, the piezoelectric layer is made of 30 ° YX-LiNbO3And is formed and has a thickness of 0.4 lambda, where lambda is the wavelength of the lamb wave.
In other embodiments of the present invention, in the lamb wave resonator, the depth of the groove is 0.1 λ, the length of the groove is a pitch between bus bars, and the width of the groove is a pitch between adjacent electrodes, where λ is a wavelength of lamb wave.
In other embodiments of the present invention, in the lamb wave resonator, the substrate is formed of 4H-SiC.
In another embodiment of the present invention, in the lamb wave resonator, the electrode is made of a metal or an alloy such as Ti, Al, Cu, Au, Pt, Ag, Pd, Ni, or a laminate of these metals or alloys.
In another embodiment of the present invention, there is provided a manufacturing method for manufacturing a lamb wave resonator, the manufacturing method including:
a substrate forming step of forming a substrate having a high acoustic impedance;
a metal layer forming step of forming a metal layer on the substrate, the metal layer having a low acoustic impedance with respect to the substrate;
a piezoelectric layer forming step of forming a piezoelectric layer on the metal layer and forming an electrode and a bus bar on the piezoelectric layer, and;
a piezoelectric layer groove forming step of forming a groove extending in a longitudinal direction of the electrode on an upper surface of the piezoelectric layer.
In other embodiments of the present invention, in the manufacturing method, the metal layer is formed of one or more of Al, Cu, and W.
In other embodiments of the present invention, in the method of manufacturing, the piezoelectric layer is made of 30 ° YX-LiNbO3And is formed and has a thickness of 0.4 lambda, where lambda is the wavelength of the lamb wave.
In another embodiment of the present invention, in the manufacturing method, a depth of the groove is 0.1 λ, a length of the groove is a pitch between the bus bars, and a width of the groove is a pitch between the adjacent electrodes, where λ is a wavelength of lamb wave.
Effects of the invention
According to the present invention, stray in the resonator can be suppressed by forming the groove on the piezoelectric layer, and leakage of energy to the substrate can be suppressed by forming the double-layer structure of low acoustic impedance and high acoustic impedance using the metal layer and the substrate.
Further, according to the present invention, a lamb wave resonator having a high electromechanical coupling coefficient can be provided.
In addition, according to the present invention, the heat dissipation performance of the lamb wave resonator can be improved by providing the metal layer between the piezoelectric layer and the substrate.
In addition, according to the invention, the conductivity of the metal layer is far higher than that of the piezoelectric layer, so that the damage of the pyroelectric effect to the electrode can be effectively weakened.
Drawings
So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings, where like reference numerals have been used, where possible, to designate like elements that are common to the figures. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments, wherein:
fig. 1 is a schematic perspective view of a structure obtained by disposing a metal layer between a piezoelectric layer and a substrate in a lamb resonator according to an embodiment of the present invention.
Fig. 2 is a top view of a structure resulting from the placement of a metal layer between a piezoelectric layer and a substrate in a lamb resonator according to an embodiment of the invention.
Fig. 3 is a schematic diagram of forming a slot in a surface of a piezoelectric layer of a lamb resonator according to an embodiment of the invention.
Fig. 4 is an admittance curve of a structure obtained without providing a metal layer between a piezoelectric layer and a substrate in a lamb resonator as a comparative example.
Fig. 5 is an admittance curve of a structure obtained by disposing an Al metal layer between a piezoelectric layer and a substrate in a lamb resonator according to an embodiment of the invention.
Fig. 6 is an admittance curve of a structure obtained by disposing a Cu metal layer between a piezoelectric layer and a substrate in a lamb resonator according to an embodiment of the invention.
Fig. 7 is an admittance curve of a structure obtained by disposing a W metal layer between a piezoelectric layer and a substrate in a lamb resonator according to an embodiment of the invention.
FIG. 8 is a flow diagram of a method of fabricating a lamb resonator according to one embodiment of the invention.
It is contemplated that elements of one embodiment of the present invention may be beneficially utilized on other embodiments without further recitation.
Detailed Description
Other advantages and technical effects of the present invention will be apparent to those skilled in the art from the disclosure of the present specification, which is described in the following detailed description. The present invention is not limited to the following embodiments, and various other embodiments may be implemented or applied, and various modifications and changes may be made in the details of the present description without departing from the spirit of the present invention.
Hereinafter, a detailed description will be given of a specific embodiment of the present invention based on the drawings. The drawings are for simplicity and clarity and are not intended to be drawn to scale, reflecting the actual dimensions of the structures described. To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
< example 1>
Hereinafter, a lamb wave resonator according to an embodiment of the present invention will be described with reference to fig. 1 to 7. In the present embodiment, as an example, a lamb resonator includes a substrate 1 and a resonator structure including a metal layer 2, a piezoelectric layer 3, and electrodes 4 and bus bars 5.
Fig. 1 is a schematic perspective view of a structure obtained by disposing a metal layer 2 between a piezoelectric layer 3 and a substrate 1 in a lamb resonator according to an embodiment of the present invention.
As shown in fig. 1, a substrate 1, a metal layer 2, a piezoelectric layer 3, and electrodes 4 and bus bars 5 of the lamb resonator are shown in this order from bottom to top.
The substrate 1 may be formed of sapphire, GaAs, glass, Si, 4H-SiC, or the like. Preferably, the substrate 1 is formed of a material having a high acoustic impedance, such as 4H-SiC, to prevent energy, such as acoustic wave energy, from leaking to the substrate.
The piezoelectric layer 3 may be made of nitride such as AlN, ZnO, PZT (lead zirconate titanate), and/or LiNbO3Etc. are formed. Preferably, the piezoelectric layer 3 may be made of 30 ° YX-LiNbO3Is formed so that the structure obtains a poleHigh electromechanical coupling coefficient. Preferably, the piezoelectric layer 3 may have a thickness of 0.4 λ (λ is the wavelength of lamb waves). Electrodes 4 and bus bars 5 may be formed on the piezoelectric layer 3. The electrodes 4 and the bus bars 5 may be made of a metal or an alloy such as Ti, Al, Cu, Au, Pt, Ag, Pd, Ni, or a laminate of these metals or alloys. The electrodes 4 and the bus bars 5 may be formed of the same material or different materials.
A metal layer 2 is formed between the substrate 1 and the piezoelectric layer 3. The metal layer 2 may be formed of one or more of Al, Cu, and W. Since the metal has high thermal conductivity, the metal layer 2 can improve the heat dissipation performance of the lamb wave resonator. And because the conductivity of the metal layer 2 can be much higher than that of the piezoelectric layer 3, the damage of adverse effects such as pyroelectric effect to the electrode 4 can be effectively reduced. In addition, the metal layer 2 may have a low acoustic impedance with respect to the substrate 1, and thus the metal layer 2 and the substrate 1 form a double-layer structure of low acoustic impedance and high acoustic impedance, so that an acoustic wave leaking from the piezoelectric layer 3 may be reflected, leakage of energy to the substrate may be suppressed, and the Q value may be significantly improved.
In addition, a groove 6 extending in the length direction of the electrode 4 may be formed on the upper surface of the piezoelectric layer 3 (i.e., the surface close to the electrode 4) to suppress noise. The structure of the piezoelectric layer 3 having the grooves 6 formed therein will be described in more detail below with reference to fig. 2 and 3.
Fig. 2 is a top view of a structure obtained by providing a metal layer between the piezoelectric layer 3 and the substrate 1 in the lamb resonator according to an embodiment of the invention. Fig. 3 is a schematic view of forming a groove 6 on the surface of the piezoelectric layer 3 of the lamb resonator according to an embodiment of the present invention.
As shown in fig. 2, an electrode 4 is formed on the piezoelectric layer 3. Although the electrodes 4 shown in fig. 2 are electrodes arranged in a grid-like interdigitated configuration, the electrodes 4 may be arranged in other ways, including but not limited to an interdigitated spiral configuration, a circular interdigitated spiral configuration, and a polygonal interdigitated spiral configuration. Bus bars 5 may be formed at both ends of the electrodes 4. A groove 6 is formed in the upper surface of the piezoelectric layer 3 in the direction in which the electrode 4 extends. The length L of the slot 6 is the spacing between the bus bars, and the width W of the slot 6 is the spacing between adjacent electrodes 4. Fig. 3 shows a cross section taken along a plane perpendicular to the direction in which the electrodes 4 extend between adjacent bus bars 5. Although in fig. 3 the cross section of the groove 6 is shown as rectangular, the cross section of the groove 6 may also have other shapes, such as square, semi-circular, trapezoidal, triangular, etc. Preferably, the depth D of the groove 6 may be 0.1 λ (λ is the wavelength of lamb waves).
Hereinafter, the comparison of the performance of the lamb resonator without a metal layer and the lamb resonator with a different metal layer of the present embodiment will be described with reference to fig. 4 to 7.
Fig. 4 is an admittance curve of a structure obtained without providing a metal layer between a piezoelectric layer and a substrate in a lamb resonator as a comparative example. Fig. 5 is an admittance curve of a structure obtained by disposing an Al metal layer between a piezoelectric layer and a substrate in a lamb resonator according to an embodiment of the invention. Fig. 6 is an admittance curve of a structure obtained by disposing a Cu metal layer between a piezoelectric layer and a substrate in a lamb resonator according to an embodiment of the invention. Fig. 7 is an admittance curve of a structure obtained by disposing a W metal layer between a piezoelectric layer and a substrate in a lamb resonator according to an embodiment of the invention. In FIGS. 4 to 7, fsThe resonant frequency, i.e. the frequency in the frequency response curve at which the admittance is maximum, is the frequency at which the vibration amplitude of the resonator is maximum. Q is utilization fsThe calculated Q value. As can be seen from fig. 4 to 7, providing a metal layer of Al or W between the piezoelectric layer and the substrate can greatly improve the Q value, compared to a structure in which no metal layer is provided between the piezoelectric layer and the substrate. At the same time, the provision of a metal layer enables the resonant frequency f to be changed compared to the absence of a metal layersAnd the degree of change varies depending on the material of the metal layer. The metal layer can thus be provided as desired, thereby making the lamb resonator suitable for use at the resonance frequency fsThere are circumstances of particular requirements.
< example 2>
A method for manufacturing a lamb wave resonator according to an embodiment of the present invention will be described below with reference to fig. 8.
FIG. 8 is a flow diagram of a method of fabricating a lamb resonator according to one embodiment of the invention.
As shown in fig. 8, the method begins in step S801. In step S801, a substrate is formed using a material such as sapphire, GaAs, glass, Si, 4H — SiC, or the like. Preferably, the substrate is formed using a material having a high acoustic impedance, such as 4H-SiC, to prevent energy, such as acoustic wave energy, from leaking to the substrate.
In step S802, a metal layer is formed on the substrate using a technique such as a physical \ chemical vapor deposition technique, an atomic layer deposition technique, or the like. The metal layer may be formed of one or more of Al, Cu, W. The metal layer may have a low acoustic impedance with respect to the substrate.
In step S803, a piezoelectric layer is formed on the metal layer using a technique such as a physical \ chemical vapor deposition technique, an atomic layer deposition technique, or the like, and electrodes and bus bars are formed on the piezoelectric layer using a technique such as a magnetron sputtering technique, an electron beam evaporation technique, or the like (optionally in combination with processes such as photolithography, etching, and lift-off, or the like). Preferably, the piezoelectric layer is made of 30 ° YX-LiNbO3And (4) forming. Preferably, the thickness of the piezoelectric layer is 0.4 λ (λ is the wavelength of the lamb wave).
In step S804, a groove extending in the length direction of the electrode is formed on the upper surface of the piezoelectric layer using a process such as photolithography, etching, and lift-off. Preferably, the length L of the groove is a pitch between the bus bars, the width W of the groove is a pitch between the adjacent electrodes, and the depth D of the groove is 0.1 λ (λ is a wavelength of lamb wave).
After step S804 ends, the manufacturing method ends.
Alternative embodiments of the present invention are described in detail above. It will, however, be appreciated that various embodiments and modifications may be made thereto without departing from the broader spirit and scope of the invention. Many modifications and variations will be apparent to those of ordinary skill in the art in light of the above teachings without undue experimentation. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should fall within the scope of protection defined by the claims of the present invention.
Claims (10)
1. A lamb wave resonator comprising:
a substrate having a high acoustic impedance;
a piezoelectric layer on which electrodes and bus bars are formed; and
a metal layer disposed between the piezoelectric layer and the substrate and having a low acoustic impedance relative to the substrate,
wherein grooves extending in a length direction of the electrodes are formed on an upper surface of the piezoelectric layer, a length of the grooves is a pitch between the bus bars, a width of the grooves is a pitch between the adjacent electrodes, and the grooves are located between the electrodes.
2. The lamb wave resonator of claim 1, wherein said metal layer is formed from one or more of Al, Cu, W.
3. The lamb wave resonator of claim 1, wherein said piezoelectric layer is formed from 30 ° YX-LiNbO3And is formed and has a thickness of 0.4 lambda, where lambda is the wavelength of the lamb wave.
4. The lamb wave resonator of claim 1, wherein the depth of said grooves is 0.1 λ, where λ is the wavelength of the lamb wave.
5. The lamb wave resonator of claim 1 wherein said substrate is formed of 4H-SiC.
6. The lamb wave resonator according to claim 1, wherein said electrodes are comprised of a Ti, Al, Cu, Au, Pt, Ag, Pd, Ni metal or alloy, or a stack of such metals or alloys.
7. A method of manufacturing a lamb wave resonator, comprising:
a substrate forming step of forming a substrate having a high acoustic impedance;
a metal layer forming step of forming a metal layer on the substrate, the metal layer having a low acoustic impedance with respect to the substrate;
a piezoelectric layer forming step of forming a piezoelectric layer on the metal layer, and forming an electrode and a bus bar on the piezoelectric layer; and
a piezoelectric layer groove forming step of forming a groove extending in a length direction of the electrode on an upper surface of the piezoelectric layer,
wherein the length of the slot is a spacing between the bus bars, the width of the slot is a spacing between adjacent electrodes, and the slot is located between the electrodes.
8. The method of manufacturing of claim 7, wherein the metal layer is formed of one or more of Al, Cu, W.
9. The method of manufacturing of claim 7 wherein the piezoelectric layer is formed from 30 ° YX-LiNbO3And is formed and has a thickness of 0.4 lambda, where lambda is the wavelength of the lamb wave.
10. The method of manufacturing of claim 7, wherein the depth of the groove is 0.1 λ, where λ is a wavelength of lamb waves.
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