CN112271983A - Efficient light-concentrating photovoltaic power generation equipment and method - Google Patents
Efficient light-concentrating photovoltaic power generation equipment and method Download PDFInfo
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- CN112271983A CN112271983A CN202011148738.4A CN202011148738A CN112271983A CN 112271983 A CN112271983 A CN 112271983A CN 202011148738 A CN202011148738 A CN 202011148738A CN 112271983 A CN112271983 A CN 112271983A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Abstract
本申请公开了一种高效聚光的光伏发电设备，该光伏发电设备包括光伏区域和热电区域，其中光伏区域中的半导体光伏电池可以将太阳光中的光能转换成电能，热电区域中的半导体热电电池可以将太阳光中的热能转换成电能。在光伏发电设备温度过高的情况下，半导体光伏电池发电效率低，而且还有半导体光伏电池损坏的危险。因此可以通过液晶透镜关闭光伏区域的透光，使得半导体光伏电池尽快散热后继续工作，而半导体热电电池正好利用高温时太阳光的热能进行电能转换，从而提高整体光伏发电设备的发电效率。
The present application discloses a high-efficiency concentrating photovoltaic power generation device. The photovoltaic power generation device includes a photovoltaic region and a thermoelectric region, wherein semiconductor photovoltaic cells in the photovoltaic region can convert light energy in sunlight into electrical energy, and semiconductor photovoltaic cells in the thermoelectric region can convert light energy in sunlight into electrical energy. Thermoelectric cells convert the heat energy in sunlight into electricity. When the temperature of the photovoltaic power generation equipment is too high, the power generation efficiency of the semiconductor photovoltaic cell is low, and there is a danger of the semiconductor photovoltaic cell being damaged. Therefore, the light transmission of the photovoltaic area can be closed through the liquid crystal lens, so that the semiconductor photovoltaic cell can continue to work after dissipating heat as soon as possible.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to a photovoltaic power generation device and method for efficient light condensation.
Background
The rapid progress of human society is based on the rapid development of fossil energy technology, and the demand for fossil energy mainly including petroleum, coal, and natural gas is increasing every year. But this type of energy on earth is limited and fossil energy will be depleted in the middle of the 21 st century according to the current rate of consumption. The use of such fossil energy sources has also been associated with a wide range of serious human and natural environmental impacts. Therefore, the new green, pollution-free and renewable energy source can replace the existing energy source to become the basis of the future energy source system. Among them, solar energy is considered as the most suitable and ideal alternative energy source for the future human society.
The photovoltaic technology is a good method, the conversion efficiency of the cell can be obviously improved by focusing sunlight to improve the energy flux density on the surface of the cell, and meanwhile, the consumption of the crystalline silicon solar cell is reduced, and the production cost is reduced.
However, focusing sunlight on the surface of the battery brings a lot of heat, increases the temperature of the battery, decreases the power generation efficiency of the battery, and even damages the battery elements when the temperature is too high.
Disclosure of Invention
In view of the defects in the prior art, the present application provides a photovoltaic power generation apparatus and method with high light concentration, which includes a photovoltaic region and a thermoelectric region, wherein the semiconductor photovoltaic cell in the photovoltaic region can convert the light energy in the sunlight into electric energy, and the semiconductor thermoelectric cell in the thermoelectric region can convert the heat energy in the sunlight into electric energy. Under the condition that the temperature of the photovoltaic power generation equipment is too high, the power generation efficiency of the semiconductor photovoltaic cell is low, so that the light transmission of a photovoltaic area can be closed through the liquid crystal lens, the semiconductor photovoltaic cell can continue to work after heat dissipation as soon as possible, and the power generation efficiency of the whole photovoltaic power generation equipment is improved.
In a first aspect, the present application discloses a high-efficiency concentrating photovoltaic power generation device, comprising:
the power generation box comprises a semiconductor photovoltaic cell, a semiconductor thermoelectric cell, a temperature detector and a liquid crystal lens;
the power generation box body comprises a side panel and a bottom plate, and the side panel surrounds the outline of the bottom plate; the temperature detector is arranged in the power generation box body;
the bottom plate comprises a photovoltaic area and a thermoelectric area, the semiconductor photovoltaic cells which are connected in series with each other are arranged on the photovoltaic area in an array mode, and the semiconductor thermoelectric cells which are connected in series with each other are arranged on the thermoelectric area;
the liquid crystal lens is arranged at one end of the side panel, which is far away from the bottom plate; the liquid crystal lens covers the photovoltaic region and the thermoelectric region in an orthographic projection region of the bottom plate.
It can be appreciated that the present application discloses a high efficiency concentrated photovoltaic power plant comprising a photovoltaic region in which semiconductor photovoltaic cells can convert light energy in sunlight into electrical energy and a thermoelectric region in which semiconductor thermoelectric cells can convert thermal energy in sunlight into electrical energy. In the case of an excessively high temperature of the photovoltaic power generation apparatus, the semiconductor photovoltaic cell has a low power generation efficiency, and there is a risk of damage to the semiconductor photovoltaic cell. Therefore, the light transmission of the photovoltaic area can be closed through the liquid crystal lens, so that the semiconductor photovoltaic cell can continue to work after heat dissipation is carried out as soon as possible, and the semiconductor thermoelectric cell just utilizes the heat energy of sunlight at high temperature to carry out electric energy conversion, thereby improving the power generation efficiency of the whole photovoltaic power generation equipment.
As an alternative embodiment, a side of the bottom plate facing away from the liquid crystal lens is provided with a metal heat dissipation rib structure.
It can be understood that the metal heat dissipation rib structure is made of rigid materials, and can increase the contact area of the power generation box and the external cold air, so that the heat generated in the closed power generation box body is smoothly discharged to the outside, and a better heat dissipation effect is achieved.
As an alternative embodiment, the base plate corresponding to the photovoltaic region includes a heat-conducting ceramic layer and a heat treatment layer, which are sequentially stacked, the heat-conducting ceramic layer being in contact with the semiconductor photovoltaic cell, the heat treatment layer being formed between the heat-conducting ceramic layer and the metal heat dissipation rib structure; the heat treatment layer comprises a heat pipe heat dissipation system and a heat insulation glue material filled between the heat conduction ceramic layer and the metal heat dissipation rib structure.
It can be understood that, because the heat-insulating adhesive material is filled between the heat-conducting ceramic layer and the metal heat dissipation rib structure, the heat generated in the photovoltaic region can only be processed by the heat pipe heat dissipation system.
As an optional embodiment, the heat pipe heat dissipation system includes a U-shaped heat pipe and a liquid pump; the U-shaped heat pipe comprises a first straight pipe, a bent pipeline and a second straight pipe which are communicated with each other; the first straight pipe is arranged in parallel to the heat-conducting ceramic layer and is in contact with the heat-conducting ceramic layer; the second straight pipe is arranged in parallel to the heat-conducting ceramic layer and is in contact with the metal heat dissipation rib structure; one end, away from the bent pipeline, of the second straight pipe is communicated with an inlet of the liquid pump, and one end, away from the bent pipeline, of the first straight pipe is communicated with an outlet of the liquid pump.
As an optional implementation manner, a refrigerant for heat dissipation is stored in the U-shaped heat pipe, the first straight pipe serves as an evaporation cavity of the refrigerant, and the second straight pipe serves as a condensation cavity of the refrigerant.
Among them, the refrigerant is a substance that easily absorbs heat to become gas and easily releases heat to become liquid. The ideal refrigerant is non-toxic, non-explosive, non-corrosive to metal and nonmetal, non-combustible, easy to detect when leaking, chemically stable, non-destructive to lubricating oil, has high latent heat of evaporation, and is harmless to environment. Such as: ammonia gas, chlorofluorocarbons, and the like.
It can be understood that the refrigerant stored in the U-shaped heat pipe absorbs the heat transmitted by the heat-conducting ceramic layer in the first straight pipe and evaporates into refrigerant gas, the refrigerant gas enters the second straight pipe through the bent pipeline, the refrigerant gas is condensed into refrigerant liquid in the second straight pipe through indirect contact with the metal heat-dissipating rib structure, and the refrigerant liquid finally returns to the first straight pipe through the liquid pump for recycling. Thereby taking away the heat generated by the semiconductor photovoltaic cell and dissipating the heat.
As an alternative embodiment, the semiconductor thermoelectric cell comprises P-type semiconductor pillars and N-type semiconductor pillars which are arranged at intervals, wherein the P-type semiconductor pillars and the N-type semiconductor pillars which are adjacently arranged form a pair of PN assemblies, and the tops of the P-type semiconductor pillars and the N-type semiconductor pillars in the PN assemblies are connected with each other through a top electrode; the bottom of the N-type semiconductor column of one PN assembly is connected with the bottom of the N-type semiconductor column of another PN assembly which is adjacently arranged through a bottom electrode; the bottom electrode is in contact with the metal heat dissipation rib structure.
It will be appreciated that the sunlight strikes the semiconductor thermoelectric cell primarily at the top electrode, and thus the hot side of the semiconductor thermoelectric cell, while the bottom electrode facing away from the sunlight and in contact with the metal heat sink rib structure is the cold side of the semiconductor thermoelectric cell. Holes in the P-type semiconductor column move from the hot end to the cold end, electrons in the N-type semiconductor column also move from the hot end to the cold end, so that a potential difference is formed at the cold end of the PN assembly, and the potential differences of the PN assemblies are superposed to form the power supply of the semiconductor thermoelectric battery.
As an alternative embodiment, the P-type semiconductor pillars and the N-type semiconductor pillars have the same size in a direction perpendicular to the bottom plate; the spacing distance between the P-type semiconductor column and the N-type semiconductor column is equal; the top electrode and the bottom electrode are of the same size.
It can be understood that the heights of the P-type semiconductor pillars and the N-type semiconductor pillars are uniform; the spacing distance between the P-type semiconductor column and the N-type semiconductor column is equal; the sizes of the top electrode and the bottom electrode are consistent, so that the structure of the whole semiconductor thermoelectric battery is more standard and beautiful, and the production is convenient.
As an alternative embodiment, the bottom plate corresponding to the thermoelectric region is coated with a heat-insulating colloid flat layer, and the size of the heat-insulating colloid flat layer in the direction perpendicular to the bottom plate is smaller than the size of the P-type semiconductor pillars and the N-type semiconductor pillars in the direction perpendicular to the bottom plate.
It can be understood that the arrangement of the heat insulation colloid flat layer enables the heat of the PN assembly not to be diffused outwards, and the carriers of the P-type semiconductor column and the N-type semiconductor column fully absorb the sunlight heat from the top electrode and convert the sunlight heat into electric quantity, so that the power generation efficiency of the semiconductor thermoelectric cell is improved.
As an alternative embodiment, the temperature detector is arranged close to the photovoltaic region.
It can be understood that the temperature detector is arranged at a position close to the photovoltaic region, so that the temperature of the semiconductor photovoltaic cell in the photovoltaic region can be monitored more accurately. In the case of an excessively high temperature of the photovoltaic power generation apparatus, the semiconductor photovoltaic cell has a low power generation efficiency, and there is a risk of damage to the semiconductor photovoltaic cell. Therefore, the light transmission of the photovoltaic area can be closed through the liquid crystal lens in time, and the semiconductor photovoltaic cell can continue to work after heat dissipation is carried out as soon as possible.
In a second aspect, the present application further discloses a high-efficiency concentrating photovoltaic power generation method, which is applied to any one of the above high-efficiency concentrating photovoltaic power generation devices, and includes:
transmitting a first electric signal to the liquid crystal lens to enable the liquid crystal lens to be completely transparent, wherein the photovoltaic area and the thermoelectric area are irradiated by sunlight;
receiving the box body temperature detected by the temperature detector in real time;
transmitting a second electric signal to the liquid crystal lens under the condition that the temperature of the box body is greater than a preset threshold value, so that the part of the liquid crystal lens corresponding to the photovoltaic area is not transparent any more;
and under the condition that the temperature of the box body is cooled to be lower than the preset threshold value, transmitting the first electric signal to the liquid crystal lens again to enable the liquid crystal lens to be completely transparent, wherein the photovoltaic area and the thermoelectric area are irradiated by sunlight.
It can be understood that the first electric signal is transmitted to the liquid crystal lens, so that the liquid crystal lens completely transmits light, and the photovoltaic area and the thermoelectric area are both irradiated by sunlight; monitoring the temperature of the semiconductor photovoltaic cells 20 in the photovoltaic region 121 in real time by the temperature detector 16; transmitting a second electric signal to the liquid crystal lens under the condition that the temperature is higher than a preset threshold value, so that the part of the liquid crystal lens corresponding to the photovoltaic area is not transparent any more, thereby gaining heat dissipation time for the semiconductor photovoltaic cell 20 and dissipating heat as soon as possible; and after the temperature is monitored to recover again, the first electric signal is transmitted to the liquid crystal lens again, so that the liquid crystal lens completely transmits light, and the photovoltaic area and the thermoelectric area are irradiated by sunlight.
The beneficial effects of this application are embodied in:
the application discloses a photovoltaic power generation device with high-efficiency light concentration, which comprises a photovoltaic area and a thermoelectric area, wherein a semiconductor photovoltaic cell in the photovoltaic area can convert light energy in sunlight into electric energy, and a semiconductor thermoelectric cell in the thermoelectric area can convert heat energy in the sunlight into electric energy. In the case of an excessively high temperature of the photovoltaic power generation apparatus, the semiconductor photovoltaic cell has a low power generation efficiency, and there is a risk of damage to the semiconductor photovoltaic cell. Therefore, the light transmission of the photovoltaic area can be closed through the liquid crystal lens, so that the semiconductor photovoltaic cell can continue to work after heat dissipation is carried out as soon as possible, and the semiconductor thermoelectric cell just utilizes the heat energy of sunlight at high temperature to carry out electric energy conversion, thereby improving the power generation efficiency of the whole photovoltaic power generation equipment.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings that are needed in the detailed description of the present application or the technical solutions in the prior art will be briefly described below. Throughout the drawings, like elements or portions are generally identified by like reference numerals. In the drawings, elements or portions are not necessarily drawn to scale.
Fig. 1 is a perspective view of a high-efficiency concentrating photovoltaic power generation device provided by an embodiment of the present application;
FIG. 2 is a top view of the high efficiency concentrated photovoltaic power plant shown in FIG. 1;
FIG. 3 is a cross-sectional view of the broken line X1X 1' of FIG. 2;
FIG. 4 is a cross-sectional view of the broken line X2X 2' of FIG. 2;
FIG. 5 is a schematic view of the broken line YY' of FIG. 2 in an operating state;
FIG. 6 is a schematic view of another operating state of the cross-sectional view of the broken line YY' in FIG. 2;
fig. 7 is a schematic flow chart of a photovoltaic power generation method with high-efficiency light concentration according to an embodiment of the present application.
Reference numerals:
10-a power generation box body, 11-a side panel, 12-a bottom plate, 121-a photovoltaic area, 122-a thermoelectric area, 123-a heat insulation colloid flat layer, 13-a metal heat dissipation rib structure, 14-a heat conduction ceramic layer, 15-a heat pipe heat dissipation system, 150-U-shaped heat pipes, 151-a first straight pipe, 152-a second straight pipe, 153-a bent pipeline, 154-a liquid pump, 20-a semiconductor photovoltaic cell, 30-a semiconductor thermoelectric cell, 31-a P-type semiconductor column, 32-an N-type semiconductor column, 33-a top electrode, 34-a bottom electrode, 40-a temperature detector and 50-a liquid crystal lens.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are merely used to more clearly illustrate the technical solutions of the present application, and therefore are only examples, and the protection scope of the present application is not limited thereby.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which this application belongs.
The photovoltaic technology can obviously improve the conversion efficiency of the cell by improving the energy flux density on the surface of the cell through focusing sunlight, simultaneously reduces the using amount of the crystalline silicon solar cell and reduces the production cost. However, focusing sunlight on the surface of the battery brings a lot of heat, increases the temperature of the battery, decreases the power generation efficiency of the battery, and even damages the battery elements when the temperature is too high. The part of heat is not effectively utilized and is radiated into the air, and the thermoelectric device is added into the original photovoltaic power generation equipment to supplement power generation by utilizing the part of heat, so that the solar energy is further utilized to convert the heat energy in the sunlight into electric energy, and the power generation efficiency is improved.
As shown in fig. 1 and 2, the present application discloses a high-efficiency concentrating photovoltaic power generation apparatus, including: the power generation box body 10, the semiconductor photovoltaic cell 20, the semiconductor thermoelectric cell 30, the temperature detector 40 and the liquid crystal lens 50.
The power generation box body 10 comprises a side panel 11 and a bottom plate 12, wherein the side panel 11 surrounds the outline of the bottom plate 12; a temperature detector 40 is arranged in the power generation box body 10; as shown in fig. 2, the base plate 12 includes a photovoltaic region 121 on which semiconductor photovoltaic cells 20 connected in series with each other are mounted in an array, and a thermoelectric region 122 on which semiconductor thermoelectric cells 30 connected in series with each other are mounted; the liquid crystal lens 50 is arranged at one end of the side panel 11, which is far away from the bottom plate 12; the liquid crystal lens 50 covers the photovoltaic region 121 and the pyroelectric region 122 in the orthographic projection area of the base plate 12.
It can be appreciated that the present application discloses a highly efficient concentrated photovoltaic power plant comprising a photovoltaic region 121 and a thermoelectric region 122, wherein the semiconductor photovoltaic cells 20 in the photovoltaic region 121 can convert the light energy in the sunlight into electrical energy and the semiconductor thermoelectric cells 30 in the thermoelectric region 122 can convert the thermal energy in the sunlight into electrical energy. In the case where the temperature of the photovoltaic power generation apparatus is excessively high, the power generation efficiency of the semiconductor photovoltaic cell 20 is low, and there is a risk that the semiconductor photovoltaic cell 20 is damaged. Therefore, the light transmission of the photovoltaic region 121 can be closed through the liquid crystal lens 50, so that the semiconductor photovoltaic cell 20 can continue to work after heat dissipation is carried out as soon as possible, and the semiconductor thermoelectric cell 30 just utilizes the heat energy of sunlight at high temperature to carry out electric energy conversion, thereby improving the power generation efficiency of the whole photovoltaic power generation equipment.
As an alternative embodiment, as shown in fig. 3 to 6, the side of the bottom plate 12 facing away from the liquid crystal lens 50 is provided with a metal heat dissipation rib structure 13.
It can be understood that the metal heat dissipation rib structure 13 is made of a rigid material, and can increase the contact area between the power generation box and the external cold air, so that the heat generated inside the enclosed power generation box 10 can be smoothly discharged to the outside, and a better heat dissipation effect can be achieved.
As an alternative embodiment, as shown in fig. 3, the base plate 12 corresponding to the photovoltaic region 121 includes a heat-conductive ceramic layer 14 and a heat treatment layer, which are sequentially stacked, the heat-conductive ceramic layer 14 being in contact with the semiconductor photovoltaic cell 20, the heat treatment layer being formed between the heat-conductive ceramic layer 14 and the metal heat dissipation rib structure 13; the thermal processing layer comprises a heat pipe heat dissipation system 15 and a thermal insulation glue filled between the thermal conductive ceramic layer 14 and the metal heat dissipation rib structure 13.
It can be understood that, since the thermal insulation adhesive material is filled between the thermal conductive ceramic layer 14 and the metal heat dissipation rib structure 13, the heat generated by the photovoltaic region 121 can be only processed by the heat pipe heat dissipation system 15.
As an alternative embodiment, as shown in fig. 3, the heat pipe heat dissipation system 15 includes a U-shaped heat pipe 150 and a liquid pump 154; the U-shaped heat pipe 150 comprises a first straight pipe 151, a bent pipeline 153 and a second straight pipe 152 which are communicated with each other; the first straight tube 151 is arranged parallel to the heat-conductive ceramic layer 14 and is in contact with the heat-conductive ceramic layer 14; the second straight tube 152 is arranged parallel to the heat-conducting ceramic layer 14 and is in contact with the metal heat dissipation rib structure 13; an end of the second straight pipe 152 facing away from the curved conduit 153 communicates with an inlet of the liquid pump 154, and an end of the first straight pipe 151 facing away from the curved conduit 153 communicates with an outlet of the liquid pump 154.
As an alternative embodiment, a refrigerant for dissipating heat is stored in the U-shaped heat pipe 150, the first straight pipe 151 serves as an evaporation chamber of the refrigerant, and the second straight pipe 152 serves as a condensation chamber of the refrigerant.
Among them, the refrigerant is a substance that easily absorbs heat to become gas and easily releases heat to become liquid. The ideal refrigerant is non-toxic, non-explosive, non-corrosive to metal and nonmetal, non-combustible, easy to detect when leaking, chemically stable, non-destructive to lubricating oil, has high latent heat of evaporation, and is harmless to environment. Such as: ammonia gas, chlorofluorocarbons, and the like.
It can be understood that the refrigerant stored in the U-shaped heat pipe 150 absorbs the heat transferred by the heat conductive ceramic layer 14 in the first straight pipe 151 and evaporates into refrigerant gas, the refrigerant gas enters the second straight pipe 152 through the curved pipe 153, and is condensed into refrigerant liquid in the second straight pipe 152 through indirect contact with the metal heat dissipation rib structure 13, and the refrigerant liquid finally returns to the first straight pipe 151 through the liquid pump 154 for recycling. Thereby taking away the heat generated by the semiconductor photovoltaic cell 20 and dissipating the heat therefrom.
As shown in fig. 4, as an alternative embodiment, the semiconductor thermoelectric cell 30 includes P-type semiconductor pillars 31 and N-type semiconductor pillars 32 arranged at intervals, the P-type semiconductor pillars 31 and N-type semiconductor pillars 32 adjacently arranged constitute a pair of PN modules, and tops of the P-type semiconductor pillars 31 and N-type semiconductor pillars 32 in the PN modules are connected to each other through top electrodes 33; the bottoms of the N-type semiconductor column 32 of one PN element and the N-type semiconductor column 32 of another PN element disposed adjacently are connected to each other through a bottom electrode 34; the bottom electrode 34 is in contact with the metal heat sink rib structure 13.
In the embodiment of the application, the semiconductor thermoelectric battery utilizes the Seebeck effect of semiconductor materials, namely when the temperatures of two types of semiconductors are different at P, N, the potential difference exists between the two ends of the semiconductor, and the current flows after the semiconductor thermoelectric battery is connected with an external circuit, so that the thermoelectric power generation is realized. The semiconductor thermoelectric material has the characteristics of small volume, high reliability, no pollution, no noise and capability of generating power by temperature difference, and can generate power by utilizing waste heat of a cooling system.
It will be appreciated that the sunlight strikes the semiconductor thermoelectric cells 30 primarily at the top electrode 33, and thus the top electrode 33 is the hot side of the semiconductor thermoelectric cells 30, while the bottom electrode 34 facing away from the sunlight and in contact with the metal heat sink rib structure 13 is the cold side of the semiconductor thermoelectric cells 30. Holes in the P-type semiconductor column 31 move from the hot end to the cold end, electrons in the N-type semiconductor column 32 also move from the hot end to the cold end, so that a potential difference is formed at the cold end of the PN components, and the potential differences of the PN components are superposed to form the power supply quantity of the semiconductor thermoelectric battery 30.
As an alternative embodiment, P-type semiconductor pillars 31 and N-type semiconductor pillars 32 are uniform in size in a direction perpendicular to floor 12; the P-type semiconductor pillars 31 and the N-type semiconductor pillars 32 are spaced at equal distances; the top electrode 33 and the bottom electrode 34 are of uniform size.
In the embodiment of the application, the P-type semiconductor and the N-type semiconductor are formed by high-pressure stamping and sintering antimony and bismuth powder, and then are cut into particles; the top electrode and the bottom electrode are respectively a copper foil conductor, and the P-type semiconductor and the N-type semiconductor are welded with the top electrode and the bottom electrode by a brazing flux.
It can be understood that the heights of P-type semiconductor pillars 31 and N-type semiconductor pillars 32 are uniform; the P-type semiconductor pillars 31 and the N-type semiconductor pillars 32 are spaced at equal distances; the top electrode 33 and the bottom electrode 34 are of uniform size, which makes the overall semiconductor thermoelectric cell 30 more standard, aesthetically pleasing, and easy to manufacture.
As an alternative embodiment, the bottom plate 12 corresponding to the thermoelectric region 122 is coated with a thermal insulating colloid flat layer 123, and the size of the thermal insulating colloid flat layer 123 in the direction perpendicular to the bottom plate 12 is smaller than the size of the P-type semiconductor pillars 31 and the N-type semiconductor pillars 32 in the direction perpendicular to the bottom plate 12.
It can be understood that the thermal insulating colloid flat layer 123 is disposed such that the heat of the PN assembly is not diffused to the outside, and the carriers of the P-type semiconductor columns 31 and the N-type semiconductor columns 32 sufficiently absorb the solar heat from the top electrode 33 to convert it into electricity, thereby improving the power generation efficiency of the semiconductor thermoelectric cell 30.
As an alternative embodiment, the temperature detector 40 is disposed close to the photovoltaic region 121.
It will be appreciated that the temperature detector 40 is disposed proximate the photovoltaic region 121 to facilitate more accurate monitoring of the temperature of the semiconductor photovoltaic cells 20 within the photovoltaic region 121. In the case where the temperature of the photovoltaic power generation apparatus is excessively high, the power generation efficiency of the semiconductor photovoltaic cell 20 is low, and there is a risk that the semiconductor photovoltaic cell 20 is damaged. Therefore, the light transmission of the photovoltaic region 121 can be closed in time through the liquid crystal lens 50, so that the semiconductor photovoltaic cell 20 can continue to work after heat dissipation as soon as possible.
The beneficial effects of this application are embodied in:
the application discloses a photovoltaic power generation device with high-efficiency light concentration, which comprises a photovoltaic area 121 and a thermoelectric area 122, wherein a semiconductor photovoltaic cell 20 in the photovoltaic area 121 can convert light energy in sunlight into electric energy, and a semiconductor thermoelectric cell 30 in the thermoelectric area 122 can convert heat energy in the sunlight into electric energy. In the case where the temperature of the photovoltaic power generation apparatus is excessively high, the power generation efficiency of the semiconductor photovoltaic cell 20 is low, and there is a risk that the semiconductor photovoltaic cell 20 is damaged. Therefore, the light transmission of the photovoltaic region 121 can be closed through the liquid crystal lens 50, so that the semiconductor photovoltaic cell 20 can continue to work after heat dissipation is carried out as soon as possible, and the semiconductor thermoelectric cell 30 just utilizes the heat energy of sunlight at high temperature to carry out electric energy conversion, thereby improving the power generation efficiency of the whole photovoltaic power generation equipment.
As shown in fig. 7, in a second aspect, the present application further discloses a high-efficiency concentrating photovoltaic power generation method, which is applied to any one of the above high-efficiency concentrating photovoltaic power generation devices, and includes:
701. and transmitting the first electric signal to the liquid crystal lens to enable the liquid crystal lens to be completely transparent, and enabling the photovoltaic area and the thermoelectric area to be irradiated by sunlight.
702. And receiving the box body temperature detected by the semiconductor thermoelectric battery in real time.
703. And transmitting a second electric signal to the liquid crystal lens under the condition that the temperature of the box body is greater than a preset threshold value, so that the part of the liquid crystal lens corresponding to the photovoltaic area does not transmit light any more.
The preset threshold value can be set by a person skilled in the art according to a specific device model, and is intended to protect the semiconductor photovoltaic cell 20 in the photovoltaic region 121 from being damaged at a high temperature or greatly reducing the power generation efficiency.
704. And under the condition that the temperature of the box body is cooled to be lower than a preset threshold value, the first electric signal is transmitted to the liquid crystal lens again, so that the liquid crystal lens completely transmits light, and the photovoltaic area and the thermoelectric area are irradiated by sunlight.
It can be understood that, as shown in fig. 5, the first electrical signal is transmitted to the liquid crystal lens, so that the liquid crystal lens is completely transparent, and the photovoltaic region and the thermoelectric region are both irradiated by sunlight; monitoring the temperature of the semiconductor photovoltaic cells 20 in the photovoltaic region 121 in real time by the temperature detector 40; transmitting a second electric signal to the liquid crystal lens under the condition that the temperature is greater than the preset threshold value, so that the part of the liquid crystal lens corresponding to the photovoltaic area does not transmit light any more, as shown in fig. 6, thereby gaining heat dissipation time for the semiconductor photovoltaic cell 20 and dissipating heat as soon as possible; and after the temperature is monitored to recover again, the first electric signal is transmitted to the liquid crystal lens again, so that the liquid crystal lens completely transmits light, and the photovoltaic area and the thermoelectric area are irradiated by sunlight.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present disclosure, and the present disclosure should be construed as being covered by the claims and the specification.
Claims (10)
1. A high efficiency concentrating photovoltaic power plant, comprising:
the power generation box comprises a semiconductor photovoltaic cell, a semiconductor thermoelectric cell, a temperature detector and a liquid crystal lens;
the power generation box body comprises a side panel and a bottom plate, and the side panel surrounds the outline of the bottom plate; the temperature detector is arranged in the power generation box body;
the bottom plate comprises a photovoltaic area and a thermoelectric area, the semiconductor photovoltaic cells which are connected in series with each other are arranged on the photovoltaic area in an array mode, and the semiconductor thermoelectric cells which are connected in series with each other are arranged on the thermoelectric area;
the liquid crystal lens is arranged at one end of the side panel, which is far away from the bottom plate; the liquid crystal lens covers the photovoltaic region and the thermoelectric region in an orthographic projection region of the bottom plate.
2. A high efficiency concentrated photovoltaic power plant according to claim 1, characterized in that:
and a metal heat dissipation rib structure is arranged on one side of the bottom plate, which is deviated from the liquid crystal lens.
3. A high efficiency concentrated photovoltaic power plant according to claim 2, characterized in that:
the bottom plate corresponding to the photovoltaic region comprises a heat-conducting ceramic layer and a heat treatment layer which are sequentially stacked, the heat-conducting ceramic layer is in contact with the semiconductor photovoltaic cell, and the heat treatment layer is formed between the heat-conducting ceramic layer and the metal heat dissipation rib structure;
the heat treatment layer comprises a heat pipe heat dissipation system and a heat insulation glue material filled between the heat conduction ceramic layer and the metal heat dissipation rib structure.
4. A high efficiency concentrated photovoltaic power plant according to claim 3, characterized in that:
the heat pipe cooling system comprises a U-shaped heat pipe and a liquid pump;
the U-shaped heat pipe comprises a first straight pipe, a bent pipeline and a second straight pipe which are communicated with each other; the first straight pipe is arranged in parallel to the heat-conducting ceramic layer and is in contact with the heat-conducting ceramic layer; the second straight pipe is arranged in parallel to the heat-conducting ceramic layer and is in contact with the metal heat dissipation rib structure;
one end, away from the bent pipeline, of the second straight pipe is communicated with an inlet of the liquid pump, and one end, away from the bent pipeline, of the first straight pipe is communicated with an outlet of the liquid pump.
5. A high efficiency concentrated photovoltaic power plant according to claim 4, characterized in that:
a refrigerant for heat dissipation is stored in the U-shaped heat pipe, the first straight pipe serves as an evaporation cavity of the refrigerant, and the second straight pipe serves as a condensation cavity of the refrigerant.
6. A high efficiency concentrated photovoltaic power plant according to claim 3, characterized in that:
the semiconductor thermoelectric battery comprises P-type semiconductor columns and N-type semiconductor columns which are arranged at intervals, wherein the P-type semiconductor columns and the N-type semiconductor columns which are arranged adjacently form a pair of PN assemblies, and the tops of the P-type semiconductor columns and the N-type semiconductor columns in the PN assemblies are mutually connected through a top electrode; the bottom of the N-type semiconductor column of one PN assembly is connected with the bottom of the N-type semiconductor column of another PN assembly which is adjacently arranged through a bottom electrode;
the bottom electrode is in contact with the metal heat dissipation rib structure.
7. A high efficiency concentrated photovoltaic power plant according to claim 6, characterized in that:
the sizes of the P-type semiconductor columns and the N-type semiconductor columns in the direction perpendicular to the bottom plate are consistent;
the spacing distance between the P-type semiconductor column and the N-type semiconductor column is equal;
the top electrode and the bottom electrode are of the same size.
8. A high efficiency concentrated photovoltaic power plant according to claim 6,
and a bottom plate corresponding to the thermoelectric region is coated with a heat-insulating colloid flat layer, and the size of the heat-insulating colloid flat layer in the direction vertical to the bottom plate is smaller than the sizes of the P-type semiconductor columns and the N-type semiconductor columns in the direction vertical to the bottom plate.
9. A high efficiency concentrated photovoltaic power plant according to claim 1,
the temperature detector is arranged at a position close to the photovoltaic area.
10. A high-efficiency concentrating photovoltaic power generation method applied to the high-efficiency concentrating photovoltaic power generation apparatus according to any one of claims 1 to 9,
transmitting a first electric signal to the liquid crystal lens to enable the liquid crystal lens to be completely transparent, wherein the photovoltaic area and the thermoelectric area are irradiated by sunlight;
receiving the box body temperature detected by the temperature detector in real time;
transmitting a second electric signal to the liquid crystal lens under the condition that the temperature of the box body is greater than a preset threshold value, so that the part of the liquid crystal lens corresponding to the photovoltaic area is not transparent any more;
and under the condition that the temperature of the box body is cooled to be lower than the preset threshold value, transmitting the first electric signal to the liquid crystal lens again to enable the liquid crystal lens to be completely transparent, wherein the photovoltaic area and the thermoelectric area are irradiated by sunlight.
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