CN112289905B - LED chip and manufacturing method thereof, LED packaging device, and display device - Google Patents
LED chip and manufacturing method thereof, LED packaging device, and display device Download PDFInfo
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- CN112289905B CN112289905B CN202011147363.XA CN202011147363A CN112289905B CN 112289905 B CN112289905 B CN 112289905B CN 202011147363 A CN202011147363 A CN 202011147363A CN 112289905 B CN112289905 B CN 112289905B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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Abstract
The embodiment of the invention provides an LED chip and a manufacturing method thereof, an LED packaging device and a display device, wherein the LED chip comprises a substrate, a chip main body arranged on one side of the substrate, a semiconductor layer is arranged on the chip main body and comprises an N-type semiconductor layer and a P-type semiconductor layer, a first electrode layer is arranged on one side of the semiconductor layer, which is away from the substrate, a second electrode layer is arranged on one side of the first electrode layer, which is away from the substrate, and completely covers the first electrode layer, a third electrode layer is arranged on one side of the second electrode layer, which is away from the first electrode layer, and the second electrode layer reacts with target solder penetrating the third electrode layer to form a welding structure. The third electrode layer and the target solder react to obtain a welding layer, and meanwhile, the target solder penetrating the third electrode layer reacts with the second electrode layer to obtain a stable welding layer, so that the target solder reacts with the second electrode layer and the third electrode layer respectively to form a stable welding structure without increasing the thickness of the third electrode layer, and the welding reliability is further enhanced.
Description
Technical Field
The embodiment of the invention relates to the field of LED chips, in particular to an LED chip, a manufacturing method thereof, an LED packaging device and a display device.
Background
An LED (LIGHT EMITTING Diode) is a semiconductor device which utilizes the energy released when the carriers are compounded to form luminescence, and the LED chip has the advantages of low power consumption, pure chromaticity, long service life, small volume, quick response time, energy conservation, environmental protection and the like.
At present, in the related art, metals such as Au (gold) are electroplated on the LED chip as an electrode layer to be welded with solder to form a welding layer, which plays a role in electric conduction, and because Au and other metals have high cost, the electrode layer is set as a thin layer, so that the welding layer formed by welding the electrode layer of the LED chip with the solder is also a very thin welding layer, and as the working time of the LED chip increases, in the LED chip structure, the electrode structure of the LED chip and the welding layer formed by the solder form a cavity, so that the welding reliability gradually loses, and finally, the LED chip is electrically connected to be opened, and the working function is lost.
Disclosure of Invention
The LED chip, the manufacturing method thereof, the LED packaging device and the display device mainly solve the technical problem that in the related art, a welding layer formed by an LED electrode and welding flux is easy to form a cavity, so that the problem of low welding reliability is solved.
To solve the above technical problems, an embodiment of the present invention provides an LED chip, including:
a substrate, a chip main body arranged at one side of the substrate;
the chip main body is provided with a semiconductor layer, wherein the semiconductor layer comprises an N-type semiconductor layer and a P-type semiconductor layer;
A first electrode layer is arranged on one side, away from the substrate, of the semiconductor layer;
a second electrode layer is arranged on one side, away from the substrate, of the first electrode layer, and the second electrode layer completely covers the first electrode layer;
and a third electrode layer is arranged on one side, away from the first electrode layer, of the second electrode layer, and the second electrode layer reacts with target solder permeated into the third electrode layer to form a welding structure.
Optionally, the LED chip further comprises a reflective layer disposed between the semiconductor layer and the first electrode layer;
optionally, the thickness of the second electrode layer is 0.4um-0.6um;
Optionally, the target solder is a tin-containing solder, and the second electrode layer is a metal electrode layer capable of reacting with the tin-containing solder;
optionally, the thickness of the third electrode layer is 0.5um-0.7um;
further, the embodiment also provides a manufacturing method of the LED chip, which includes:
Forming a chip main body on one side of a substrate;
The chip body includes a semiconductor layer including an N-type semiconductor layer and a P-type semiconductor layer;
A first electrode layer is arranged on one side, away from the substrate, of the semiconductor layer;
A second electrode layer is arranged on one side, away from the substrate, of the first electrode layer, and the second electrode layer completely covers the first electrode layer;
and a third electrode layer is arranged on one side of the second electrode layer, which is away from the first electrode layer.
Optionally, the disposing a first electrode layer on a side of the semiconductor layer away from the substrate includes:
A reflecting layer is arranged on one side of the semiconductor layer, which is away from the substrate;
the first electrode layer is arranged on one side of the reflecting layer, which is away from the semiconductor layer;
optionally, the material of the reflecting layer comprises at least one of ITO, ag, au, al, cr, ni and Ti.
Further, the embodiment of the invention also provides an LED packaging device, which comprises the LED chip.
Further, the embodiment of the invention also provides a display device which comprises the LED chip.
The LED chip comprises a substrate, a chip main body arranged on one side of the substrate, and a semiconductor layer arranged on the chip main body, wherein the semiconductor layer comprises an N-type semiconductor layer and a P-type semiconductor layer, a first electrode layer is arranged on one side, away from the substrate, of the semiconductor layer, a second electrode layer is arranged on one side, away from the substrate, of the first electrode layer, the second electrode layer completely covers the first electrode layer, a third electrode layer is arranged on one side, away from the first electrode layer, of the second electrode layer, and the second electrode layer reacts with target solder penetrating the third electrode layer to form a welding structure. The second electrode layer which can react with the target solder penetrating the third electrode layer is added between the first electrode layer and the third electrode layer, so that the third electrode layer reacts with the target solder to obtain a welding layer, and meanwhile, the target solder penetrating the third electrode layer reacts with the second electrode layer to obtain a stable welding layer, and under the condition that the thickness of the third electrode layer is not increased, the target solder reacts with the second electrode layer and the third electrode layer respectively to form a stable welding structure, so that the welding reliability is enhanced, and the problem that a cavity is easy to form in the welding layer formed by an LED electrode and the solder, and the welding reliability is low is avoided.
Additional features and corresponding advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention.
Drawings
Fig. 1 is a schematic diagram of a basic structure of a conventional LED chip according to a first embodiment of the present invention;
Fig. 2 is a schematic diagram of a basic structure of an LED chip according to a first embodiment of the present invention;
fig. 3 is a schematic diagram of another basic structure of an LED chip according to the first embodiment of the present invention;
fig. 4 is a basic flow chart of a method for manufacturing an LED chip according to a second embodiment of the present invention;
Fig. 5 is a schematic diagram of a basic structure of an LED chip according to a third embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following detailed description of the embodiments of the present invention is given with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Embodiment one:
In the related art, as shown in fig. 1, in the LED chip structure, by disposing the first electrode layer 3 on the surface of the semiconductor layer 2, where the fusion property between the first electrode layer 3 and the solder is poor, a third electrode layer 5 needs to be disposed on the side of the first electrode layer 3 far away from the substrate 1, and a soldering layer is formed by the third electrode layer 5 and the solder, where the third electrode layer 5 is generally formed by soldering a metal material such as Au (gold) and the solder to form a soldering layer, which plays a role in conducting electricity, and since the metal cost such as Au is high, the third electrode layer 5 is disposed as a thin layer, and the soldering layer formed by soldering the third electrode layer 5 and the solder is also a very thin soldering layer, as the working time of the LED chip increases, the soldering layer formed by the third electrode layer 5 and the solder forms a cavity, so that the soldering reliability is gradually lost, and finally the LED chip is electrically connected and opened.
In order to solve the problem of low welding reliability caused by the fact that a cavity is easily formed in a welding layer formed by an LED electrode and welding flux in the related art, referring to FIG. 2, the embodiment provides an LED chip, which comprises a substrate 1, a chip main body arranged on one side of the substrate 1, and a semiconductor layer 2 arranged on the chip main body, wherein the semiconductor layer 2 comprises an N-type semiconductor layer 2 and a P-type semiconductor layer 2, a first electrode layer 3 is arranged on one side of the semiconductor layer 2 away from the substrate 1, a second electrode layer 4 is arranged on one side of the first electrode layer 3 away from the substrate 1, the second electrode layer 4 completely covers the first electrode layer 3, a third electrode layer 5 is arranged on one side of the second electrode layer 4 away from the first electrode layer 3, and the second electrode layer 4 reacts with target welding flux penetrating the third electrode layer 5 to form a welding structure. According to the LED chip provided by the embodiment, the second electrode layer 4 which can react with the target solder penetrating the third electrode layer 5 is added between the first electrode layer 3 and the third electrode layer 5, so that the third electrode layer 5 and the target solder and the second electrode layer 4 and the target solder react respectively to obtain the welding layer, the target solder and the second electrode layer 4 and the third electrode layer 5 form a stable welding structure, the welding reliability is enhanced under the condition that the thickness of the third electrode layer 5 is not increased, and the problem that a cavity is easy to form in the welding layer formed by the LED electrode and the solder, so that the welding reliability is low is avoided.
In some examples of this embodiment, the material of the substrate 1 includes, but is not limited to, one or more of sapphire aluminum oxide, silicon carbide, silicon, gallium nitride, gallium arsenide, gallium phosphide, indium phosphide, aluminum gallium indium phosphide, and the like.
In some examples of the present embodiment, the semiconductor layer 2 is a gallium nitride-based semiconductor layer 2, that is, the N-type semiconductor layer 2 and the P-type semiconductor layer 2 are both gallium nitride-based semiconductor layers 2, it should be understood that the semiconductor layer 2 provided in the embodiment of the present application may be made of other materials, which is not particularly limited to this embodiment.
It should be understood that the LED chip further includes a quantum well layer 7, a conductive layer, and other structural layers, which are not described herein.
In some examples of this embodiment, the LED chip further includes a reflective layer 6 disposed between the semiconductor layer 2 and the first electrode layer 3, as shown in fig. 3, it should be understood that the reflective layer 6 is formed on a surface of the semiconductor layer 2 on a side away from the substrate 1 using a deposition process, and the reflective layer 6 is made of one or more of ITO, ag, au, al, cr, ni and Ti. The light emitted from the quantum well layer 7 by the LED chip is partially emitted directly from the substrate 1 side and partially emitted from the side facing away from the substrate 1, thereby reducing light extraction efficiency. Currently, in the related art, a Distributed Bragg Reflector (DBR) layer is formed on a side facing away from the substrate 1 to reflect light on the side facing away from the substrate 1. But the apparatus for forming the DBR layer is expensive and the process is complicated. In some examples, the LED chip reflects light on a side away from the substrate 1 back to the substrate 1 by forming a reflective layer 6 on the surface of the semiconductor layer 2, so as to improve the light extraction efficiency of the chip and further improve the brightness of the chip.
In some examples of the present embodiment, the first electrode layer 3 is formed by depositing a filler metal layer on a surface of the semiconductor layer 2 on a side far from the substrate 1 through an electron beam evaporation, magnetron sputtering, electroplating or electroless plating process, when the reflective layer 6 is present on a surface of the LED chip semiconductor layer 2 on a side far from the substrate 1, the filler metal layer is deposited on a surface of the reflective layer 6 on a side far from the substrate 1 to form the first electrode layer 3, wherein the thickness of the first electrode layer 3 is 0.2um to 0.4um, and the material of the first electrode layer 3 includes, but is not limited to, cr, ti, al, ni, pt or other metal or a combination of multiple layers of metals, thereby forming the first electrode layer 3, and preferably, the thickness of the first electrode layer 3 is 0.2um.
In some examples of this embodiment, the second electrode layer 4 is formed by depositing a filler metal layer on the side of the first electrode layer 3 far from the substrate 1 by an electron beam evaporation, magnetron sputtering, electroplating or electroless plating process, wherein the thickness of the second electrode layer 4 is 0.4um-0.6um, preferably, the thickness of the second electrode layer 4 is 0.4um, it should be noted that the target solder is tin-containing solder, the second electrode layer 4 is a metal electrode layer capable of reacting with the tin-containing solder, the material of the target solder includes but is not limited to one or more of tin, tin-silver-copper, tin-bismuth-copper, lead-tin and other mixtures, the material of the second electrode layer 4 includes but is not limited to Cr, ti, ni, pt, CU and other metals capable of forming a stable alloy structure with the target solder, for example, the target solder is a solder paste solder, and the second electrode layer 4 is a Cu (copper) metal layer, at this time, the second electrode layer 4 forms a stable Cu6Sn5 layer with the target solder penetrating the third electrode, the third electrode 5 is not increased in thickness, the conductive layer is not covered by the third electrode 5, the effect is not influenced by the third electrode 5, the effect is not guaranteed, the long-term effect is avoided, the effect is not being influenced by the third electrode 5, and the conductive layer is not covered by the third electrode 5, and the effect is not guaranteed, and the effect is completely is not influenced by the conductive layer.
In some examples of this embodiment, the third electrode layer 5 is formed by depositing a filler metal layer on the side of the second electrode layer 4 remote from the substrate 1 by electron beam evaporation, magnetron sputtering, electroplating or electroless plating, wherein the thickness of the third electrode layer 5 is 0.5um to 0.7um, and the material of the third electrode layer 5 includes, but is not limited to, AU, pt, or a combination of metals or multiple metals, and thus the third electrode layer 5 is formed, and preferably, the thickness of the third electrode layer 5 is 0.5um.
The LED chip comprises a substrate, a chip main body arranged on one side of the substrate, and a semiconductor layer arranged on the chip main body, wherein the semiconductor layer comprises an N-type semiconductor layer and a P-type semiconductor layer, a first electrode layer is arranged on one side, away from the substrate, of the semiconductor layer, a second electrode layer is arranged on one side, away from the substrate, of the first electrode layer, the second electrode layer completely covers the first electrode layer, a third electrode layer is arranged on one side, away from the first electrode layer, of the second electrode layer, and the second electrode layer reacts with target solder penetrating the third electrode layer to form a welding structure. The second electrode layer which can react with the target solder penetrating the third electrode layer is added between the first electrode layer and the third electrode layer, so that the third electrode layer reacts with the target solder to obtain a welding layer, and meanwhile, the target solder penetrating the third electrode layer reacts with the second electrode layer to obtain a stable welding layer, and under the condition that the thickness of the third electrode layer is not increased, the target solder reacts with the second electrode layer and the third electrode layer respectively to form a stable welding structure, so that the welding reliability is enhanced, and the problem that a cavity is easy to form in the welding layer formed by an LED electrode and the solder, and the welding reliability is low is avoided.
Embodiment two:
the present embodiment provides a method for manufacturing the LED chip as described above, as shown in fig. 4, which includes but is not limited to:
s401, forming a chip main body on one side of a substrate;
In some examples of this embodiment, the material of the substrate includes, but is not limited to, one or more of sapphire aluminum oxide, silicon carbide, silicon, gallium nitride, gallium arsenide, gallium phosphide, indium phosphide, aluminum gallium indium phosphide, and the like, and then the chip body is grown on the substrate using MOCVD (metal organic chemical vapor deposition apparatus). For example, an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer are sequentially epitaxially grown on a substrate by MOCVD, or a P-type semiconductor layer, a quantum well layer and an N-type semiconductor layer are sequentially epitaxially grown on a substrate by MOCVD, wherein the P-type semiconductor layer and the N-type semiconductor layer are collectively referred to as a semiconductor layer.
S402, arranging a first electrode layer on one side of the semiconductor layer away from the substrate;
In some examples of this embodiment, the first electrode layer is formed on the side of the semiconductor layer facing away from the substrate, for example, when the N-type semiconductor layer, the quantum well layer and the P-type semiconductor layer on the substrate are grown in sequence, an etching process is used to strip part of the quantum well layer and the P-type semiconductor layer to expose part of the N-type semiconductor layer, and the first electrode layer is formed on the surface of the P-type semiconductor layer and the exposed N-type semiconductor layer on the side of the substrate by respectively using electron beam evaporation, magnetron sputtering, electroplating or electroless plating process, or the first electrode layer is formed on the substrate by respectively using electron beam evaporation, magnetron sputtering, electroplating or electroless plating process, or when the P-type semiconductor layer, the quantum well layer and the N-type semiconductor layer on the substrate are grown in sequence, the etching process is used to strip part of the quantum well layer and the N-type semiconductor layer, so as to expose part of the P-type semiconductor layer, and deposit the filling metal layer on the surface of the side of the N-type semiconductor layer and the exposed P-type semiconductor layer, respectively, wherein the thickness of the first electrode layer is 0.2um-0.4um, cr, ti, al, ni, pt um, and the material of the first electrode layer includes one metal or a plurality of layers or a combination of metal layers.
It should be understood that the etching process provided by the embodiment of the present application may be a dry etching process or a wet etching process, which is not particularly limited and needs to be selected according to practical applications.
It will be appreciated that in some examples, providing a first electrode layer on a side of the semiconductor layer facing away from the substrate includes providing a reflective layer on a side of the semiconductor layer facing away from the substrate, providing the first electrode layer on a side of the reflective layer facing away from the semiconductor layer, for example, using an etching process to expose a portion of the N-type semiconductor layer, then using a deposition process to form the reflective layer on a side surface of the P-type semiconductor layer and the exposed portion of the N-type semiconductor layer facing away from the substrate, or using an etching process to expose a portion of the P-type semiconductor layer, then using a deposition process to form the reflective layer on a side surface of the N-type semiconductor layer and the exposed portion of the P-type semiconductor layer facing away from the substrate, wherein the reflective layer is made of one or more of ITO, ag, au, al, cr, ni and Ti. It will be appreciated that in this case a filler metal layer is deposited on the surface of the reflective layer remote from the substrate to form the first electrode layer.
S403, arranging a second electrode layer on one side of the first electrode layer, which is away from the substrate, wherein the second electrode layer completely covers the first electrode layer;
In some examples of this embodiment, a second electrode layer is formed by depositing a filler metal layer on the side of the first electrode layer remote from the substrate by e-beam evaporation, magnetron sputtering, electroplating or electroless plating, wherein the thickness of the second electrode layer is 0.4um to 0.6um, it should be noted that in some examples, the target solder is a tin-containing solder, the second electrode layer is a metal electrode layer capable of reacting with the tin-containing solder, for example, the target solder is a solder paste, and the second electrode layer is a Cu (copper) metal layer, at this time, the second electrode layer and the target solder penetrating the third electrode layer form a stable Sn5Cu6 solder layer, without increasing the thickness of the third electrode layer, the stability of soldering is enhanced, and the long-term operation reliability of the LED chip is improved.
S404, a third electrode layer is arranged on one side, away from the first electrode layer, of the second electrode layer;
In some examples of this embodiment, a third electrode layer is formed by depositing a filler metal layer on the side of the second electrode layer remote from the substrate by electron beam evaporation, magnetron sputtering, electroplating or electroless plating, wherein the thickness of the third electrode layer is 0.5um to 0.7um, and the material of the third electrode layer includes, but is not limited to, AU or a metal or an alloy combination of metals, thereby forming the third electrode layer.
The LED chip is manufactured by the method, the second electrode layer capable of reacting with target solder penetrating the third electrode layer is added between the first electrode layer and the third electrode layer, the target solder penetrating the third electrode layer is reacted with the second electrode layer to obtain a stable welding layer, the second electrode layer is arranged on the side, away from the substrate, of the first electrode layer, the second electrode layer completely covers the first electrode layer, the third electrode layer is arranged on the side, away from the first electrode layer, of the second electrode layer, the second electrode layer capable of reacting with the target solder penetrating the third electrode layer is added between the first electrode layer and the third electrode layer, the third electrode layer is reacted with the target solder to obtain a welding layer, the target solder penetrating the third electrode layer is reacted with the second electrode layer to obtain a stable welding layer, the welding structure is formed by the target solder and the second electrode layer and the third electrode layer under the condition that the thickness of the third electrode layer is not increased, the problem that the welding reliability of the LED electrode and the formed layer is easy to form a cavity is solved, and the problem of low reliability of welding is avoided.
Embodiment III:
For better understanding of the present invention, a more specific example is provided in this embodiment, and referring to fig. 5, the LED chip includes, but is not limited to, a substrate 1, an N-type semiconductor layer 21, a quantum well layer 7 and a P-type semiconductor layer 22, which are sequentially epitaxially grown on the substrate 1, and an etching process is used to strip part of the quantum well layer 7 and the P-type semiconductor layer 22, so that part of the N-type semiconductor layer 21 is exposed, and a deposition process is used to form a reflective layer 6 on the P-type semiconductor layer 22 and a surface of the exposed N-type semiconductor layer 21, which is far from the substrate 1.
The substrate 1 is a silicon-free structure formed by titanium dioxide, the N-type semiconductor layer 21 and the P-type semiconductor layer 22 are gallium nitride-based semiconductor layers, and the reflecting layer 6 is made of ITO.
In some examples, the LED chip further comprises forming a first electrode layer 3 by electroplating on a side surface of the reflective layer 6 remote from the substrate 1 by depositing a filler Cr, wherein the thickness of the first electrode layer 3 is 0.2um, forming a second electrode layer 4 by depositing Cu on a side surface of the first electrode layer 3 remote from the semiconductor after the first electrode layer 3 is formed, wherein the thickness of the second electrode layer 4 is 0.4um, and forming a third electrode layer 5 by depositing an Au layer on an upper surface of the second electrode layer 42 after the second electrode layer 4 is formed, wherein the thickness of the third electrode layer 5 is 0.5um.
The LED chip provided by the embodiment comprises a substrate 1, an N-type semiconductor layer 21, a quantum well layer 7, a P-type semiconductor layer 22 and a reflecting layer 6 which are formed by epitaxial growth on the substrate 1 in sequence, wherein a first electrode layer 3 is arranged on one side of the semiconductor layer, which is away from the substrate 1, a second electrode layer 4 is arranged on one side of the first electrode layer 3, which is away from the substrate 1, the second electrode layer 4 completely covers the first electrode layer 3, a third electrode layer 5 is arranged on one side of the second electrode layer 4, which is away from the first electrode layer 3, and a second electrode layer 4 capable of reacting with target solder penetrating the third electrode layer 5 is added between the first electrode layer 3 and the third electrode layer 5, so that the target solder penetrating the third electrode layer 5 reacts with the second electrode layer 4 to obtain a stable welding layer, and under the condition that the thickness of the third electrode layer 5 is not increased, the target solder reacts with the second electrode layer 4 and the third electrode layer 5 respectively to form a stable structure, the reliability of welding is enhanced, and the problem of forming a low reliability of welding hole of the LED is avoided.
Further, the embodiment of the invention also provides an LED packaging device, including but not limited to the LED chip described in the above embodiments.
Further, the embodiment of the invention also provides a display device, including but not limited to the LED chip described in each embodiment above.
It should be understood that the LED provided in the foregoing embodiment may be applied to various light emitting fields, for example, it may be manufactured into a backlight module applied to a display backlight field (may be a backlight module of a terminal such as a television, a display, a mobile phone, etc.). It can be applied to the backlight module at this time. The display device can be applied to the field of display backlight, key backlight, shooting, household illumination, medical illumination, decoration, automobile, traffic and the like. The LED backlight module can be used as a key backlight light source of a mobile phone, a calculator, a keyboard and other key equipment when applied to the field of key backlight, can be manufactured into a flash lamp of a camera when applied to the field of shooting, can be manufactured into a floor lamp, a desk lamp, a lighting lamp, a ceiling lamp, a down lamp, a projection lamp and the like when applied to the field of household lighting, can be manufactured into an operating lamp, a low electromagnetic lighting lamp and the like when applied to the field of medical lighting, can be manufactured into various decorative lamps such as various colored lamps, landscape lighting lamps and advertisement lamps when applied to the field of decoration, can be manufactured into automobile lamps, automobile indicating lamps and the like when applied to the field of transportation, and can be manufactured into various traffic lamps and also be manufactured into various street lamps when applied to the field of transportation. The above-described applications are only a few applications of the example shown in the present embodiment, and it should be understood that the application of the LED in the present embodiment is not limited to the fields of the above-described examples.
Those of skill in the art will appreciate that the functional modules/units in the methods, systems, and apparatus disclosed above may be implemented as software (which may be implemented in computer program code executable by computing apparatus), firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components, for example, one physical component may have a plurality of functions, or one function or step may be cooperatively performed by several physical components. Some or all of the physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit.
The foregoing is a further detailed description of embodiments of the invention in connection with the specific embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (10)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011147363.XA CN112289905B (en) | 2020-10-23 | 2020-10-23 | LED chip and manufacturing method thereof, LED packaging device, and display device |
| DE212021000447.4U DE212021000447U1 (en) | 2020-10-23 | 2021-10-22 | Light source assembly, LED device with light source assembly, display device and backlight module |
| PCT/CN2021/125717 WO2022083738A1 (en) | 2020-10-23 | 2021-10-22 | Light source assembly, led device having light source assembly, display device, and backlight module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011147363.XA CN112289905B (en) | 2020-10-23 | 2020-10-23 | LED chip and manufacturing method thereof, LED packaging device, and display device |
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| CN112289905A CN112289905A (en) | 2021-01-29 |
| CN112289905B true CN112289905B (en) | 2025-03-14 |
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| KR101373710B1 (en) * | 2012-12-12 | 2014-03-13 | (주)포인트엔지니어링 | Led metal substrate and method for manufacturing the substrate |
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