CN112447571A - Wafer bearing device and wafer cleaning device adopting same - Google Patents
Wafer bearing device and wafer cleaning device adopting same Download PDFInfo
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- CN112447571A CN112447571A CN201910815410.4A CN201910815410A CN112447571A CN 112447571 A CN112447571 A CN 112447571A CN 201910815410 A CN201910815410 A CN 201910815410A CN 112447571 A CN112447571 A CN 112447571A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 25
- 238000007664 blowing Methods 0.000 claims abstract description 4
- 230000000670 limiting effect Effects 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 195
- 239000010410 layer Substances 0.000 description 27
- 239000007789 gas Substances 0.000 description 18
- 239000000126 substance Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 238000005507 spraying Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a wafer bearing device and a wafer cleaning device adopting the same, wherein the wafer bearing device comprises a bearing disc, the bearing disc is provided with a bearing surface, the bearing surface is divided into a central area and an edge area, the central area is provided with a first air hole, the edge area is provided with a second air hole, an air cushion layer is arranged between a wafer and the bearing surface, and the air cushion layer is formed by blowing gas out through the first air hole and the second air hole. The invention has the advantage that after the wafer bearing device is adopted to bear the wafer and is subjected to the process, annular pattern defects cannot be formed on the surface of the wafer.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a wafer bearing device and a wafer cleaning device adopting the same.
Background
In the production of semiconductor chips, such as DRAM chips, when a film is deposited by an Atomic Layer Deposition (ALD) method or a Chemical Vapor Deposition (CVD) method, a film material, such as silicon oxide, silicon nitride, polysilicon, etc., is deposited on the back surface of a wafer. The material deposited on the back side of the wafer may be delaminated or peeled off during the subsequent process to cause defects, and also affect the defocusing and alignment of the subsequent photolithography process and the emissivity of the rapid annealing process, so that the back side of the wafer needs to be cleaned to remove the film material deposited on the back side of the wafer.
Current method for cleaning back of waferChemical solution is adopted to act on the back of the wafer to remove the film material deposited on the back of the wafer. Specifically, fig. 1 is a schematic diagram illustrating a wafer backside cleaning process in the prior art. Referring to FIG. 1, a wafer 10 is placed on a susceptor 11 with the back side of the wafer 10 facing upward and the front side of the wafer having a pattern facing downward, and nitrogen (N) is introduced under the wafer by Bernoulli's principle2) Forming N on the front surface of the wafer 102 A protection layer 12, which is a Pattern (Pattern) for protecting the front surface of the wafer 10, and sprays a Chemical solution (Chemical)13 onto the back surface of the wafer 10 above the wafer 10, and the wafer 10 rotates with the carrier tray 11, and the Chemical solution 13 is used to remove the film material on the back surface of the wafer 10. Due to the N2Due to the presence of the protective layer 12, the chemical solution 13 does not flow to the front surface of the wafer 10, thereby preventing the pattern on the front surface of the wafer 10 from being damaged.
The method for cleaning the back of the wafer has the following disadvantages: when the temperature of the chemical solution 13 is high (> 40 ℃) and the rotation speed of the susceptor 11 is high (> 1200rpm), a significant ring-shaped pattern defect is left on the front surface of the wafer 10. FIG. 2A is a schematic front view of a wafer after cleaning, and referring to FIG. 2A, there is a ring-shaped pattern defect 20 evident on the front surface of the wafer 10. The ring-shaped pattern defect 20 is generated because the wafer 10 and the susceptor 11 are thermally expanded by the high-temperature chemical solution under the long cleaning time, and the center of the wafer 10 is slightly bent downward during the high rotation speed of the susceptor 11, so that the distance between the wafer 10 and the surface of the susceptor 11 is reduced, and the ring-shaped pattern defect 20 is clearly left on the front surface of the wafer 10. If the distance between the wafer 10 and the surface of the susceptor 11 is too close to cause the wafer 10 and the surface of the susceptor 11 to contact, referring to fig. 2B, which is a relative position diagram of the wafer 10 and the susceptor 11, the wafer 10 may directly contact with the protrusion (as shown by the arrow in the figure) of the susceptor 11 to generate a ring-shaped scratch; if the distance between the wafer 10 and the surface of the susceptor 11 is short but the wafer 10 and the surface of the susceptor 11 are not in contact, particles may be collected on the wafer 10 due to electrostatic adsorption or a process, thereby generating the dust particles in the annular pattern.
In view of the above, it is desirable to provide a wafer carrier and a wafer cleaning apparatus using the same, which overcome the above-mentioned drawbacks.
Disclosure of Invention
The present invention provides a wafer carrier and a wafer cleaning apparatus using the same, which can prevent the formation of grinding marks on the surface of a wafer.
In order to solve the above problems, the present invention provides a wafer carrying device, which includes a carrying plate, wherein the carrying plate has a carrying surface, the carrying surface is divided into a central region and an edge region, the central region is provided with a first air hole, the edge region is provided with a second air hole, an air cushion layer is arranged between a wafer and the carrying surface, and the air cushion layer is formed by blowing out gas through the first air hole and the second air hole.
Further, the included angle between the central line of the first air hole and the bearing surface is 70-90 degrees.
Furthermore, the number of the first air holes is 8-16.
Further, in the central area, the first air holes are uniformly distributed in an annular shape, and the center of the annular shape coincides with the center of the circle of the central area.
Furthermore, the bearing surface of the bearing disc is provided with a groove, the central area corresponds to the groove, and the edge area corresponds to the peripheral area of the groove.
Further, the edge area surrounds the central area, the second air holes are uniformly distributed in an annular shape in the edge area, and the center of the annular shape is overlapped with the circle center of the central area.
Further, the second air holes are distributed in at least two layers in an annular shape.
Further, the included angle between the central line of the second air hole and the bearing surface is 30-60 degrees.
Furthermore, a baffle ring protruding out of the bearing surface is arranged at the edge of the bearing disk, a gap is formed between the inner side wall of the baffle ring and the edge of the wafer placed on the air cushion layer, and the range of the gap is 5-10 mm.
Furthermore, the edge of the bearing disc is provided with a limiting column, and the limiting column limits the movement of the wafer placed on the air cushion layer in the horizontal and vertical directions.
Further, the limiting column comprises an upright column and a protruding part, the upright column limits the movement of the wafer in the horizontal direction, and the protruding part limits the movement of the wafer in the vertical direction.
The invention also provides a wafer cleaning device which comprises the wafer bearing device.
The wafer bearing device has the advantages that the first air holes are formed in the center area of the bearing surface of the wafer bearing device, the second air holes are formed in the edge area of the bearing surface of the wafer bearing device, air is blown out through the first air holes and the second air holes to form the air cushion layer, the air cushion layer lifts the wafer placed on the bearing surface, a gap is formed between the wafer and the bearing surface, the wafer is prevented from being in direct contact with or too close to the bearing surface, and therefore the defect of annular patterns formed on the front surface of the wafer during process operation is avoided.
The wafer cleaning device has the advantage that annular pattern defects cannot be formed on the front surface of the wafer after the wafer is cleaned.
Drawings
FIG. 1 is a schematic diagram of a prior art cleaning process for the backside of a wafer;
FIG. 2A is a schematic diagram of a front side of a wafer after the wafer is cleaned;
FIG. 2B is a diagram illustrating the relative positions of the wafer and the susceptor;
FIG. 3 is a schematic top view of a wafer carrier apparatus according to a first embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view taken along line A-A of FIG. 3;
FIG. 5 is a schematic view of a wafer carrier according to the present invention;
FIG. 6 is a schematic diagram of a top view of another embodiment of a wafer carrier apparatus of the present invention;
FIG. 7 is a schematic diagram of a top view of another embodiment of a wafer carrier apparatus of the present invention;
FIG. 8 is a schematic top view of a wafer carrier 3 according to a second embodiment of the present invention;
FIG. 9 is a schematic cross-sectional view taken along line A-A of FIG. 8;
FIG. 10 is a partial schematic view of the wafer edge as the backside of the wafer is cleaned;
FIG. 11 is a schematic top view of a wafer carrier apparatus according to a third embodiment of the present invention;
FIG. 12 is a schematic cross-sectional view taken along line A-A of FIG. 11;
FIG. 13 is a schematic structural diagram of one embodiment of a wafer cleaning apparatus.
Detailed Description
The following describes in detail embodiments of a wafer carrier and a wafer cleaning apparatus using the same according to the present invention with reference to the accompanying drawings.
The wafer bearing device can be used for bearing the wafer when the wafer is cleaned and can also be used for bearing the wafer when other operations are carried out on the surface of the wafer. In the following description of the embodiments, the wafer carrying apparatus is used for carrying wafers during cleaning the wafers.
Fig. 3 is a schematic top view of a wafer carrier 3 according to a first embodiment of the present invention, and fig. 4 is a schematic cross-sectional view taken along line a-a of fig. 3. Referring to fig. 3 and 4, the wafer carrier 3 includes a carrier plate 30, and the carrier plate 30 has a carrier surface 30A. Fig. 5 is a schematic view of a wafer carried by the wafer carrier of the present invention, please refer to fig. 5, wherein a wafer 100 is placed on the carrying surface 30A. To clean the backside of the wafer 100, the wafer 100 may be placed on the carrying surface 30A of the carrier plate 30 with the front side down.
The carrying surface 30A is divided into a central region C and an edge region D, and the edge region D is hatched in fig. 3. Wherein the radius of the central region C is less than two-thirds of the radius of the bearing surface 30A. In this embodiment, the edge region D surrounds the central region C, that is, the edge region D is disposed along an edge of the central region C, and the central region C and the edge region D form the bearing surface 30A. In another embodiment of the present invention, referring to fig. 6, the edge region D is located at the edge of the carrying surface 30A, the central region C is located at the center of the carrying surface 30A, and a gap is formed between the edge region D and the central region C, and in fig. 6, a dashed line is used to illustrate a boundary line between the central region C and the edge region D.
A first air hole 31 is provided in the center area C, and a second air hole 32 is provided in the edge area D. In the present embodiment, a plurality of first air holes 31 are provided in the center region C, and a plurality of second air holes 32 are provided in the edge region D. The outside air is blown out through the first air holes 31 and the second air holes 32, and the flow of the air is as shown by arrows in fig. 5. The ambient gas includes, but is not limited to, nitrogen.
A gas cushion layer 33 is disposed between the wafer 100 and the carrying surface 30A, and the gas cushion layer 33 is formed by blowing the external gas through the first air holes 31 and the second air holes 32. The gas cushion layer 33 is capable of lifting the wafer 100 placed on the carrying surface 30A, so that a gap is formed between the wafer 100 and the carrying surface 30A. That is, when the ambient gas is blown out through the first and second gas holes 31 and 32 to form the gas cushion layer 33, the front surface of the wafer 100 is not in direct contact with the carrying surface 30A. The gas cushion layer 33 can fix the wafer 100 at a predetermined position under a constant flow rate of the ambient gas.
When the wafer carrier apparatus carries the wafer 100 during wafer cleaning, and chemical solution is sprayed from above the back surface of the wafer 100, the air cushion layer 33 can serve as a barrier layer to prevent the chemical solution from entering the front surface of the wafer 100, thereby protecting the pattern on the front surface of the wafer from being damaged.
After the wafer 100 and the wafer carrier 3 deform, for example, after the wafer 100 and the wafer carrier 3 expand due to heat, in the central region C, because the gas blown out from the first gas holes 32 supports the middle portion of the wafer 100, the middle portion of the wafer 100 does not sag downward, the distance between the middle portion of the wafer 100 and the carrying surface 30A does not decrease, and thus the front surface of the wafer 100 and the carrying surface 30A can be prevented from directly contacting with each other, or particles are prevented from being collected on the front surface of the wafer 100 due to the fact that the distance between the middle portion of the wafer 100 and the carrying surface 30A is too close, and then no annular pattern defect is formed on the front surface of the wafer 100. If the flow rate of the external gas is increased, the middle portion of the wafer 100 may protrude upward, so as to further increase the distance between the wafer 100 and the carrying surface 30A, further prevent the wafer 100 from directly contacting the carrying surface 30A and particles from being collected on the wafer 100, and thus ensure that no defect of an annular pattern is formed on the front surface of the wafer 100. The flow rate of the ambient gas may be between 100 and 200L/min, so that the gas cushion layer 33 can provide a good support for the wafer 100.
Further, the first air holes 31 are uniformly distributed in the central area C in an annular shape, and the center of the annular shape coincides with the center of the central area C; the second air holes 32 are uniformly distributed in the edge region D in an annular shape, the center of the annular shape coincides with the center of the center region C, and the distribution mode can provide uniform support for the wafer 100, so that the wafer 100 is prevented from being inclined. Preferably, the number of the first air holes 31 is 8 to 16, and the first air holes 31 within the number range can enable the external air to better support the middle of the wafer 100, so as to prevent the wafer 100 from contacting the carrying surface 30A, and meanwhile, the wafer 100 is not lifted too high, so that the wafer 100 is flushed out of the wafer carrying device.
Preferably, the included angle between the central line of the first air hole 31 and the bearing surface 30A is 70-90 °. In the present embodiment, an included angle α between a central line (shown by a dotted line) of the first air hole 31 and the carrying surface 30A is 90 °, that is, the central line of the first air hole 31 is perpendicular to the carrying surface 30A, and the external air is blown out from the first air hole 31 vertically, so as to improve the support of the air cushion layer 33 on the wafer 100. In other embodiments of the present invention, an included angle between the central line of the first air hole 31 and the carrying surface 30A may be 70 ° or 80 °, and the external air is blown out obliquely from the first air hole 31.
Further, the carrying surface 30A of the carrying tray 30 has a groove 301. The grooves 301 are recessed toward the inside of the carrier tray 30. The first gas holes 31 in the central region C are arranged at positions that the middle of the wafer 100 does not contact with the edge of the groove 301 when the external gas is introduced. In this embodiment, the central region C corresponds to the groove 301, the edge region D corresponds to the peripheral region of the groove 301, the first air hole 31 is disposed on the bottom surface of the groove 301, and the second air hole 32 is disposed on the peripheral region of the groove 301. In another embodiment of the present invention, referring to fig. 7, the central region C covers the groove 301, and the first air holes 31 are disposed at the periphery of the groove 301.
Further, referring to fig. 3, 4 and 5, the edge of the susceptor 30 is provided with a limiting post 302, and the limiting post 302 limits the movement of the wafer 100 placed on the bearing surface 30A and the air cushion layer 33 in the horizontal and vertical directions, so as to prevent the wafer 100 from separating from the wafer carrier 3.
The retaining posts 302 may be rotated or moved relative to the carrier surface 30A to retain the wafer 100.
For the limit columns with asymmetric shapes, when the wafer is not placed on the bearing surface 30A, one surface of each limit column is used as the inner side surface, and the gaps of the areas limited by the limit columns are larger under the condition so that the wafer can be conveniently placed in; when the wafer is placed on the carrying surface 30A, the limiting columns rotate to enable the other surface of the wafer to serve as the inner side surface, and in this case, the gaps of the areas defined by the limiting columns are small, and the limiting columns can contact the edge of the wafer, so that the movement of the wafer in the horizontal direction and the vertical direction is limited.
For the limiting columns which can move relative to the bearing surface 30A, when the wafer is not placed on the bearing surface 30A, the limiting columns 302 are located at the outermost side, and in this case, the gaps of the areas defined by the limiting columns are larger, so that the wafer can be conveniently placed; when a wafer is placed on the carrying surface 30A, the retaining posts 302 move inward relative to the carrying surface 30A and contact the edge of the wafer, in which case the gaps between the regions defined by the retaining posts are small, thereby retaining the wafer from moving in the horizontal and vertical directions.
In this embodiment, the limiting column 302 includes a pillar 302A and a protrusion 302B connected to the pillar 302A. The protruding portion 302B may be formed integrally with the pillar 302A, or may be another member connected to the pillar 302A, and in the present embodiment, the protruding portion 302B is formed integrally with the pillar 302A.
When the wafer 100 is limited by the limiting columns 302, the columns 302A contact with the side edges of the wafer 100 to limit the movement of the wafer 100 in the horizontal direction, and the protrusions 302B are located above the back edge of the wafer 100 to limit the movement of the wafer 100 in the vertical direction. In this embodiment, the post 302 may be moved inward from the outside by moving the post 302, such that the post 302A contacts the side edge of the wafer 100 and the protrusion 302B is above the back edge of the wafer 100.
The invention also provides a second embodiment of the wafer carrying device 3. The second embodiment differs from the first embodiment in that the second air holes 32 are distributed in at least two annular layers in the edge region D. Fig. 8 is a schematic top view, and fig. 9 is a schematic cross-sectional view taken along a line a-a in fig. 8, and referring to fig. 8 and fig. 9, in the second embodiment, the second air holes 32 are distributed in a two-layer ring shape, that is, in the edge region D, the second air holes 32 are distributed in an inner ring shape 32A and an outer ring shape 32B. The second air holes 32 are annularly formed in multiple layers, so that the flow of the external air introduced below the entire bearing surface 30A is more uniform and stable, and the wafer 100 is less prone to shaking relative to the bearing plate 30.
In addition, referring to fig. 10, which is a partial schematic view of the edge of the wafer when the back surface of the wafer 100 is cleaned, the second air holes 32 are annularly arranged in multiple layers, and the external air blown to the front surface of the wafer 100 moves to the edge of the wafer 100, that is, the area of the air cushion layer 33 is increased, so that the air cushion layer 33 increases the coverage area of the front surface edge of the wafer 100, when the back surface of the wafer 100 is cleaned, the cleaning area of the chemical solution 300 on the front surface edge of the wafer is decreased, the range of the chemical solution 300 for removing the film layer in the front surface edge area of the wafer is decreased, and the control accuracy of the range of the wafer edge removing area is improved. Specifically, when the wafer is cleaned, the wafer carrying device is used for carrying the wafer, and the width of the edge removing area on the front surface of the wafer can be controlled within 0.3 mm.
Preferably, in the second embodiment, an included angle β between a central line (shown by a dotted line in fig. 9) of the second air hole 32 located in the outer ring 32B and the carrying surface 30A is 30 ° to 60 °, which can further increase a coverage area of the air cushion layer 33 on the front surface of the wafer, so as to further better protect the front surface of the wafer from being removed by the chemical solution. Preferably, the number of the second air holes 32 of the outer ring 32B is 20-40, so as to further increase the coverage area of the air cushion layer 33 on the front surface of the wafer.
To further prevent external liquid (e.g., chemical solution) from entering the front surface of the wafer from the edge of the wafer, the present invention provides a retaining ring protruding from the carrying surface 30A at the edge of the carrying plate 30. Fig. 11 is a schematic top view, and fig. 12 is a schematic cross-sectional view taken along a line a-a in fig. 11, and referring to fig. 11 and 12, the third embodiment is different from the first embodiment in that a retaining ring 34 protruding from the carrying surface 30A is disposed on the edge of the carrying plate 30, and the retaining ring 34 surrounds the edge of the carrying plate 30. A gap is formed between the inner sidewall of the baffle ring 34 and the edge of the wafer 100 placed on the air cushion layer 33, which prevents the baffle ring 34 from contacting the wafer 100, so as to facilitate the wafer 100 to be placed on the air cushion layer 33. When the external liquid is sprayed from the back of the wafer 100, the baffle ring 34 can block the external liquid, so that the volume of the external liquid entering the gap between the baffle ring 34 and the edge of the wafer is greatly reduced, the external liquid is difficult to contact the front of the wafer, the protection on the front of the wafer is improved, and the range of the removal area of the front edge of the wafer can be further reduced.
Preferably, the gap between the inner side wall of the baffle ring 34 and the edge of the wafer 100 is in a range of 5-10 mm, and when the size of the gap is in the range, the volume of the external liquid entering the front surface of the wafer can be reduced while the wafer 100 is not influenced.
The invention also provides a wafer cleaning device for bearing the wafer by adopting the wafer bearing device. Fig. 13 is a schematic structural diagram of an embodiment of the wafer cleaning apparatus. Referring to fig. 13, the wafer cleaning apparatus includes the wafer carrier 3 and the chemical solution spraying apparatus 4. The chemical solution spraying device 4 is arranged above the wafer bearing device 3, and the wafer is arranged on the wafer bearing device 3. When cleaning is needed, the chemical solution spraying device 4 sprays chemical solution, and the chemical solution acts on the back of the wafer to remove the film material on the back of the wafer. After the wafer cleaning device cleans the wafer, annular pattern defects can not be left on the front surface of the wafer.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (12)
1. The wafer bearing device is characterized by comprising a bearing plate, wherein the bearing plate is provided with a bearing surface, the bearing surface is divided into a central area and an edge area, the central area is provided with a first air hole, the edge area is provided with a second air hole, an air cushion layer is arranged between a wafer and the bearing surface, and the air cushion layer is formed by blowing gas out through the first air hole and the second air hole.
2. The apparatus of claim 1, wherein an angle between a center line of the first air hole and the carrying surface is 70 ° to 90 °.
3. The wafer carrier device according to claim 1, wherein the number of the first air holes is 8-16.
4. The wafer carrier device according to claim 1, wherein the first air holes are uniformly distributed in a ring shape in the central region, and the center of the ring shape coincides with the center of the central region.
5. The apparatus of claim 1, wherein the carrying surface of the carrying plate has a recess, the central region corresponds to the recess, and the edge region corresponds to the peripheral region of the recess.
6. The wafer carrier device according to claim 1, wherein the edge region surrounds the central region, and the second air holes are uniformly distributed in an annular shape in the edge region, and the center of the annular shape coincides with the center of the central region.
7. The wafer carrier device of claim 6, wherein the second air holes are distributed in at least two annular layers.
8. The apparatus of claim 1, wherein an angle between a center line of the second air hole and the carrying surface is between 30 ° and 60 °.
9. The wafer carrying apparatus as claimed in claim 1, wherein the edge of the carrying plate is provided with a baffle ring protruding from the carrying surface, and a gap is formed between an inner sidewall of the baffle ring and the edge of the wafer placed on the air cushion layer, and the gap is in a range of 5-10 mm.
10. The wafer carrying device according to claim 1, wherein a limiting column is disposed at an edge of the carrying plate, and the limiting column limits the movement of the wafer placed on the air cushion layer in horizontal and vertical directions.
11. The wafer carrier device of claim 10, wherein the restraint posts comprise posts that restrain movement of the wafer in a horizontal direction and ledges that restrain movement of the wafer in a vertical direction.
12. A wafer cleaning apparatus, comprising the wafer carrier apparatus as claimed in any one of claims 1 to 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910815410.4A CN112447571A (en) | 2019-08-30 | 2019-08-30 | Wafer bearing device and wafer cleaning device adopting same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910815410.4A CN112447571A (en) | 2019-08-30 | 2019-08-30 | Wafer bearing device and wafer cleaning device adopting same |
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| CN112447571A true CN112447571A (en) | 2021-03-05 |
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| CN201910815410.4A Pending CN112447571A (en) | 2019-08-30 | 2019-08-30 | Wafer bearing device and wafer cleaning device adopting same |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113108715A (en) * | 2021-04-13 | 2021-07-13 | 南京中安半导体设备有限责任公司 | Suspended matter measuring device and air floatation chuck |
| CN113745132A (en) * | 2021-09-03 | 2021-12-03 | 长鑫存储技术有限公司 | Wafer cleaning device and cleaning system |
| CN114248213A (en) * | 2021-12-02 | 2022-03-29 | 广州国显科技有限公司 | Carrying platform and detection device |
| CN114899139A (en) * | 2022-07-11 | 2022-08-12 | 沈阳芯达科技有限公司 | Wafer positioning and clamping assembly |
| TWI796218B (en) * | 2021-12-28 | 2023-03-11 | 華景電通股份有限公司 | Carrier plate applied for load port |
| WO2023109455A1 (en) * | 2021-12-14 | 2023-06-22 | 盛美半导体设备(上海)股份有限公司 | Wafer backside cleaning method |
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2019
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| CN113745132B (en) * | 2021-09-03 | 2023-10-27 | 长鑫存储技术有限公司 | Wafer cleaning device and cleaning system |
| CN114248213A (en) * | 2021-12-02 | 2022-03-29 | 广州国显科技有限公司 | Carrying platform and detection device |
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