CN112537058B - Preparation method of triboelectric thin film based on composite nanoparticle doping - Google Patents
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Abstract
Description
(一)、技术领域:(1) Technical field:
本发明涉及一种摩擦起电薄膜制备方法,特别涉及一种基于复合纳米颗粒掺杂的摩擦起电薄膜制备方法。The invention relates to a method for preparing a triboelectric thin film, in particular to a method for preparing a triboelectric thin film based on composite nanoparticle doping.
(二)、背景技术:(two), background technology:
摩擦纳米发电机(Triboelectric nanogenerator,TENG)基于摩擦起电效应和静电感应耦合,把微小的机械能转换为电能,其应用了新型的能量采集技术,在微能源和大规模的能源获取中具有广阔的应用前景。然而,目前摩擦纳米发电机的输出性能低下、鲁棒性以及环境适应性均较差,这些缺陷在其工程化应用进程中逐渐凸显,成为其进一步推广应用的瓶颈问题。摩擦纳米发电机的摩擦起电材料的固有特性对提高其输出性能至关重要,提高摩擦起电材料的表面电荷密度是实现其高输出性能的关键,而材料的介电性质在很大程度上影响摩擦材料的表面电荷密度,因此提高材料的介电性可以有效提高摩擦材料的表面摩擦电荷密度,而将高介电性的纳米粒子掺入介电薄膜中是提升介电薄膜介电性能的最简单有效的方法之一。Triboelectric nanogenerator (TENG) converts tiny mechanical energy into electrical energy based on triboelectric effect and electrostatic inductive coupling. It applies a new type of energy harvesting technology and has broad applications in micro energy and large-scale energy acquisition. prospect. However, at present, the output performance, robustness, and environmental adaptability of triboelectric nanogenerators are poor. These defects have gradually become prominent in the process of its engineering application, and have become the bottleneck of its further promotion and application. The inherent characteristics of the triboelectric material of the triboelectric nanogenerator are crucial to improving its output performance. Improving the surface charge density of the triboelectric material is the key to its high output performance, and the dielectric properties of the material are largely It affects the surface charge density of friction materials, so improving the dielectric properties of materials can effectively increase the surface triboelectric charge density of friction materials, and the incorporation of high dielectric nanoparticles into dielectric films can improve the dielectric properties of dielectric films One of the easiest and most effective methods.
从高介电纳米颗粒提升TENG表面电荷密度的机理可知,增大介电材料的介电常数能够有效减小介电薄膜的有效厚度,从而可以有效增大TENG的转移电荷量和本征电容属性。从理论上看纳米颗粒的掺杂体积比越大,介电常数提升越明显,但是在实际应用中,过多的纳米颗粒掺杂一方面会对介电材料分子结构造成破坏从而改变介电材料的得失电子能力,另一方面过多的纳米颗粒掺杂尤其是金属纳米颗粒掺杂会造成渗流现象的发生,使得摩擦电荷大量泄漏,从而降低TENG的输出性能。From the mechanism of high-dielectric nanoparticles to increase the surface charge density of TENG, it can be known that increasing the dielectric constant of dielectric materials can effectively reduce the effective thickness of dielectric films, thereby effectively increasing the amount of transferred charges and intrinsic capacitance properties of TENG. . Theoretically, the larger the doping volume ratio of nanoparticles, the more obvious the increase in dielectric constant, but in practical applications, too much nanoparticle doping will damage the molecular structure of the dielectric material and change the dielectric material. On the other hand, excessive nanoparticle doping, especially metal nanoparticle doping, will cause percolation, which will cause a large amount of triboelectric charge leakage, thereby reducing the output performance of TENG.
现有的纳米掺杂技术存在的一个主要难题,就是纳米颗粒的分散问题,团聚的纳米颗粒在薄膜内部会带来较多的缺陷,从而影响其性能的提升,这是由于纳米颗粒尺寸在纳米级别,具有较大的比表面积和极高的表面能,从而很容易在范德华力的作用下出现团聚,而大多摩擦材料又极易被化学污染,如果改用试剂对纳米颗粒进行分散后再掺入摩擦材料中,不仅引入了第二变量,给分析带来困难,而且作为溶剂的试剂材料可能会给纳米颗粒以及摩擦材料带来一定程度的污染,例如银纳米颗粒可能在分散过程中氧化,从而影响其性能。One of the main problems existing in the existing nano-doping technology is the dispersion of nanoparticles. The agglomerated nanoparticles will bring more defects inside the film, which will affect the improvement of its performance. This is because the size of nanoparticles is in the nanometer Grade, with a large specific surface area and high surface energy, so it is easy to agglomerate under the action of van der Waals force, and most friction materials are easily polluted by chemicals. If the nanoparticles are dispersed by reagents and then mixed with Into the friction material, not only introduces the second variable, which brings difficulties to the analysis, but also the reagent material as a solvent may bring a certain degree of pollution to the nanoparticles and the friction material, for example, the silver nanoparticles may be oxidized during the dispersion process, thereby affecting its performance.
掺杂材料主要分为导电纳米材料和绝缘体纳米材料两种,导电纳米材料存在金属纳米颗粒表面势能较大、易团聚、易渗流等问题,绝缘体纳米材料存在介电常数有限,提升效果有限的问题。Doping materials are mainly divided into two types: conductive nanomaterials and insulator nanomaterials. Conductive nanomaterials have problems such as large surface potential energy of metal nanoparticles, easy agglomeration, and easy seepage, while insulator nanomaterials have limited dielectric constant and limited lifting effect. .
(三)、发明内容:(3) Contents of the invention:
本发明要解决的技术问题是:提供一种基于复合纳米颗粒掺杂的摩擦起电薄膜制备方法,该方法不仅可以在保证摩擦起电薄膜正常工作的前提下提高摩擦起电薄膜的介电常数,而且可有效解决摩擦起电薄膜中纳米颗粒的团聚问题。The technical problem to be solved by the present invention is to provide a method for preparing a triboelectric film based on composite nanoparticle doping, which can not only improve the dielectric constant of the triboelectric film under the premise of ensuring the normal operation of the triboelectric film , and can effectively solve the problem of agglomeration of nanoparticles in triboelectric thin films.
本发明的技术方案:Technical scheme of the present invention:
一种基于复合纳米颗粒掺杂的摩擦起电薄膜制备方法,制备步骤如下:A method for preparing a triboelectric thin film based on composite nanoparticle doping, the preparation steps are as follows:
步骤1、取一片铜箔,铜箔可以作为摩擦纳米发电机的电极,先对铜箔进行预处理工作,使用工具(如棉签)蘸取酒精,用酒精清洁铜箔表面,将铜箔表面的灰尘和杂质擦去,然后用氮气将铜箔表面吹干;
步骤2、用电子天平称取PDMS原液,然后将电子天平归零,以SiO2@Ag复合纳米颗粒掺杂质量分数为0.02%~0.5%的比例再称取SiO2@Ag复合纳米颗粒,将称量好的SiO2@Ag复合纳米颗粒倒入称量好的PDMS原液中,制备成掺有SiO2@Ag复合纳米颗粒的PDMS混合溶液;
步骤3、采用搅拌器对步骤2制备的PDMS混合溶液进行搅拌,搅拌后进行脱泡处理,得到混合均匀的PDMS混合溶液;
步骤4、为了进一步分散SiO2@Ag复合纳米颗粒,将步骤3得到的混合均匀的PDMS混合溶液置于超声波分散仪中进行超声分散处理,由于超声分散处理过程中会引入部分气泡,因此,超声分散处理后再将PDMS混合溶液进行脱泡处理,得到分散SiO2@Ag复合纳米颗粒的PDMS混合溶液;
步骤5、向步骤4得到的分散SiO2@Ag复合纳米颗粒的PDMS混合溶液中滴入固化剂,然后使用搅拌器对PDMS混合溶液进行搅拌,搅拌后进行脱泡处理,得到制备好的PDMS混合溶液;
步骤6、采用旋涂仪将步骤5中制备好的PDMS混合溶液旋涂在铜箔的上表面上,在铜箔的上表面上形成一层均匀的薄膜;
步骤7、将步骤6中得到的上表面上形成一层均匀的薄膜的铜箔放置于培养皿中,为了防止铜箔上表面上的薄膜在固化的过程中受到污染,把培养皿的盖子盖好,然后将培养皿放置于真空干燥箱中进行固化处理,固化处理后将铜箔从培养皿中取出,即得到附着在铜箔上的基于复合纳米颗粒掺杂的摩擦起电薄膜。Step 7, place the copper foil with a uniform film formed on the upper surface obtained in
搅拌器为行星搅拌器,行星搅拌器为THINKY公司生产的型号为THINKY MIXER AR-100的行星搅拌器,超声波分散仪为日本SMT公司生产的型号为UH-600超声波分散仪。The stirrer is a planetary stirrer, and the planetary stirrer is a planetary stirrer of the model THINKY MIXER AR-100 produced by THINKY Company, and the ultrasonic disperser is a UH-600 ultrasonic disperser produced by Japan SMT Company.
步骤2中,PDMS原液为美国道康宁公司生产的Sylgard 184硅橡胶。In
步骤3中,搅拌器的转速为1500r/min~2500r/min,搅拌时间为4分钟~6分钟,脱泡处理的时间为1.5分钟~2.5分钟;In
步骤4中,超声分散处理的时间为4分钟~6分钟,超声分散处理后再采用搅拌器将PDMS混合溶液进行脱泡处理,脱泡处理的时间为25秒~35秒;In
步骤5中,搅拌器的转速为1500r/min~2500r/min,搅拌时间为4分钟~6分钟,脱泡处理的时间为1.5分钟~2.5分钟;In
步骤6中,旋涂时,先将铜箔吸附于旋涂仪的托盘上,然后启动旋涂仪的真空泵进行旋涂操作;旋涂操作分为前﹑后两个阶段:慢速匀胶阶段和高速定型阶段;慢速匀胶阶段时,旋涂仪工作在250r/min~350r/min的转速下,旋涂时间为115秒~125秒;高速定型阶段时,旋涂仪工作在950r/min~1050r/min的转速下,旋涂时间为5秒~15秒;In
步骤7中,固化处理的过程为:先将真空干燥箱的温度设置为75℃,然后预热半小时,当真空干燥箱的温度稳定后,将培养皿置于真空干燥箱内,将真空干燥箱内的压强抽到一个大气压左右,干燥两个小时后,将真空干燥箱的电源关闭,待真空干燥箱内温度降为室温后,将培养皿从真空干燥箱中取出。In step 7, the curing process is: first set the temperature of the vacuum drying oven to 75°C, and then preheat for half an hour. When the temperature of the vacuum drying oven is stable, place the petri dish in the vacuum drying oven, and vacuum dry The pressure in the box is pumped to about one atmospheric pressure. After drying for two hours, turn off the power of the vacuum drying box. After the temperature in the vacuum drying box drops to room temperature, take the petri dish out of the vacuum drying box.
铜箔的下表面上附着有一层硅油纸,硅油纸具有较好的防电荷泄漏作用,并可以保护其上的铜箔的平整度;用酒精清洁铜箔表面时,要防止铜箔与硅油纸之间进入液体。A layer of silicone oil paper is attached to the lower surface of the copper foil. The silicone oil paper has a good anti-charge leakage effect and can protect the flatness of the copper foil on it; when cleaning the surface of the copper foil with alcohol, prevent the copper foil from contacting the silicone oil paper. into the liquid.
进一步优选,步骤2中,SiO2@Ag复合纳米颗粒掺杂质量分数为0.05%~0.4%。Further preferably, in
进一步优选,步骤2中,SiO2@Ag复合纳米颗粒掺杂质量分数为0.1%~0.3%。Further preferably, in
进一步优选,步骤2中,SiO2@Ag复合纳米颗粒掺杂质量分数为0.15%~0.2%。Further preferably, in
步骤7中,培养皿为铝合金培养皿;采用铝合金培养皿的原因是其具有传热性能较好,底面平整,并具有在高温不下变形等优点。In step 7, the petri dish is an aluminum alloy petri dish; the reason for using the aluminum alloy petri dish is that it has better heat transfer performance, a flat bottom surface, and has the advantages of not being deformed under high temperature.
由摩擦序列表可知,PDMS(聚二甲基硅氧烷)是一种摩擦电负性较强的材料,鉴于其具备透明度高、热稳定性能良好、加工工艺成熟等优点,选用其为负摩擦材料。It can be seen from the friction sequence table that PDMS (polydimethylsiloxane) is a material with strong triboelectric negativity. In view of its advantages such as high transparency, good thermal stability, and mature processing technology, it was selected as the negative friction material. Material.
为了保证制备的摩擦起电薄膜与电极具有较高的集成度,采用旋涂工艺将PDMS混合溶液直接旋涂在铜箔电极上,从而制备出摩擦起电薄膜与铜箔电极一体的器件。In order to ensure a high degree of integration between the prepared triboelectrification film and the electrode, the PDMS mixed solution was directly spin-coated on the copper foil electrode by a spin-coating process, thereby preparing a device in which the triboelectrification film and the copper foil electrode were integrated.
本发明的有益效果:Beneficial effects of the present invention:
1、本发明将SiO2@Ag复合纳米颗粒按照一定的质量分数掺杂在PDMS原液中形成PDMS混合溶液,然后对PDMS混合溶液搅拌﹑超声分散处理,再将其均匀涂在铜箔电极上,最后使其固化在铜箔电极上形成摩擦起电薄膜;由于本发明采用了SiO2@Ag复合纳米颗粒掺杂,Ag纳米颗粒附着于SiO2绝缘微球表面,SiO2微球将会在薄膜内部构成阻断层,从而起到阻止电荷泄漏的作用,有利于较多Ag纳米颗粒的掺杂和介电常数的提高;因此,本发明在保证摩擦起电薄膜正常工作的前提下可以提高摩擦起电薄膜的介电常数,从而有效提升TENG的表面电荷密度,增大TENG的转移电荷量,提升TENG的输出性能,使TENG的鲁棒性优异。1. In the present invention, SiO 2 @Ag composite nanoparticles are doped into the PDMS stock solution according to a certain mass fraction to form a PDMS mixed solution, and then the PDMS mixed solution is stirred, ultrasonically dispersed, and then evenly coated on the copper foil electrode. Finally make it solidified on the copper foil electrode to form a triboelectric thin film; because the present invention uses SiO 2 @Ag composite nanoparticle doping, Ag nanoparticles are attached to the surface of SiO 2 insulating microspheres, and SiO 2 microspheres will be in the thin film The interior constitutes a blocking layer, thereby playing the role of preventing charge leakage, which is conducive to the doping of more Ag nanoparticles and the improvement of the dielectric constant; therefore, the present invention can improve the friction under the premise of ensuring the normal operation of the triboelectric film The dielectric constant of the electrified film can effectively increase the surface charge density of TENG, increase the amount of transferred charge of TENG, improve the output performance of TENG, and make TENG excellent in robustness.
2、本发明的SiO2@Ag复合纳米颗粒中,粒径为5-10nm的Ag纳米颗粒附着在粒径为200nm的SiO2绝缘微球表面,SiO2绝缘微球的粒径比较大,分散度较好,降低了掺杂过程中的分散难度,容易得到均匀分散的Ag纳米颗粒,解决了摩擦起电薄膜中纳米颗粒的团聚问题,而且还能够保证纳米颗粒原有的稳定性和活性。2. In the SiO 2 @Ag composite nanoparticles of the present invention, Ag nanoparticles with a particle size of 5-10 nm are attached to the surface of SiO 2 insulating microspheres with a particle size of 200 nm. The SiO 2 insulating microspheres have a relatively large particle size and are dispersed The degree is better, which reduces the difficulty of dispersion in the doping process, and it is easy to obtain uniformly dispersed Ag nanoparticles, which solves the problem of agglomeration of nanoparticles in triboelectrification films, and can also ensure the original stability and activity of nanoparticles.
3、本发明中的SiO2@Ag复合纳米颗粒是一种复合微球结构,将成本较高的Ag纳米颗粒均匀地负载于SiO2表面,可减小Ag的用量,降低了摩擦起电薄膜的制作成本。3. The SiO 2 @Ag composite nanoparticle in the present invention is a composite microsphere structure, and the Ag nanoparticle with higher cost is evenly loaded on the surface of SiO 2 , which can reduce the amount of Ag and reduce the friction of the triboelectric film. production cost.
4、本发明使用旋涂法制备SiO2@Ag复合纳米颗粒掺杂的摩擦起电薄膜,使摩擦起电薄膜表面平整,掺杂均匀。4. In the present invention, a spin coating method is used to prepare a triboelectric film doped with SiO 2 @Ag composite nanoparticles, so that the surface of the triboelectric film is smooth and the doping is uniform.
(四)、附图说明:(4) Description of drawings:
图1为SiO2@Ag复合纳米颗粒结构模型示意图;Figure 1 is a schematic diagram of the structure model of SiO 2 @Ag composite nanoparticles;
图2为传统的Ag纳米颗粒掺杂对TENG性能的提升模型示意图;Figure 2 is a schematic diagram of the improvement model of traditional Ag nanoparticles doping on the performance of TENG;
图3为采用SiO2@Ag复合纳米颗粒掺杂对TENG性能的提升模型示意图;Figure 3 is a schematic diagram of the performance improvement model of TENG by doping with SiO 2 @Ag composite nanoparticles;
图4为含银量较高的SiO2@Ag复合纳米颗粒按照不同质量分数掺杂后的TENG的短路电流示意图;Figure 4 is a schematic diagram of the short-circuit current of TENG doped with SiO2@Ag composite nanoparticles with high silver content according to different mass fractions;
图5为含银量较高的SiO2@Ag复合纳米颗粒按照不同质量分数掺杂后的TENG的开路电压示意图;Figure 5 is a schematic diagram of the open circuit voltage of TENG doped with SiO2@Ag composite nanoparticles with high silver content according to different mass fractions;
图6为含银量较低的SiO2@Ag复合纳米颗粒按照不同质量分数掺杂后的TENG的短路电流示意图;Figure 6 is a schematic diagram of the short-circuit current of TENG doped with SiO2@Ag composite nanoparticles with lower silver content according to different mass fractions;
图7为含银量较低的SiO2@Ag复合纳米颗粒按照不同质量分数掺杂后的TENG的开路电压示意图;Figure 7 is a schematic diagram of the open circuit voltage of TENG doped with SiO2@Ag composite nanoparticles with lower silver content according to different mass fractions;
图8为含银量较高的SiO2@Ag复合纳米颗粒掺杂后TENG的转移电荷量示意图;Figure 8 is a schematic diagram of the transfer charge of TENG after doping SiO2@Ag composite nanoparticles with high silver content;
图9为未经掺杂的TENG一个周期的电流以及其对应的电荷转移量示意图;Figure 9 is a schematic diagram of the current of an undoped TENG and its corresponding charge transfer in one cycle;
图10为含银量较高的SiO2@Ag复合纳米颗粒掺杂质量分数为0.3wt.%时的TENG一个周期的电流以及其对应的电荷转移量示意图;Figure 10 is a schematic diagram of the current of one cycle of TENG and the corresponding charge transfer amount when the doping mass fraction of SiO2@Ag composite nanoparticles with higher silver content is 0.3wt.%.
图11为含银量较低的SiO2@Ag复合纳米颗粒掺杂后TENG的转移电荷量示意图;Figure 11 is a schematic diagram of the transfer charge of TENG after doping SiO 2 @Ag composite nanoparticles with low silver content;
图12为含银量较低的SiO2@Ag复合纳米颗粒掺杂质量分数为0.1wt.%时的TENG一个周期的电流以及其对应的电荷转移量示意图;Figure 12 is a schematic diagram of the current of one cycle of TENG and the corresponding charge transfer amount when the doping mass fraction of SiO 2 @Ag composite nanoparticles with low silver content is 0.1wt.%.
图13为未经掺杂的TENG的输出功率示意图;Figure 13 is a schematic diagram of the output power of the undoped TENG;
图14为含银量较高的SiO2@Ag复合纳米颗粒掺杂质量分数为0.3wt.%时的TENG的输出功率示意图;Figure 14 is a schematic diagram of the output power of TENG when the doping mass fraction of SiO2@Ag composite nanoparticles with higher silver content is 0.3wt.%.
图15为含银量较低的SiO2@Ag复合纳米颗粒掺杂质量分数为0.1wt.%时的TENG的输出功率示意图;Figure 15 is a schematic diagram of the output power of TENG when the doping mass fraction of SiO2@Ag composite nanoparticles with low silver content is 0.1wt.%.
图16为不同TENG对相同电容的充电性能测试示意图。Figure 16 is a schematic diagram of the charging performance test of different TENGs on the same capacitor.
图中,1为Ag纳米颗粒;2为介电薄膜;3为SiO2微球;4为阻断层。In the figure, 1 is Ag nanoparticles; 2 is a dielectric film; 3 is SiO 2 microspheres; 4 is a blocking layer.
(五)、具体实施方式:(5), specific implementation method:
基于复合纳米颗粒掺杂的摩擦起电薄膜制备方法的制备步骤如下:The preparation steps of the triboelectric film preparation method based on composite nanoparticle doping are as follows:
步骤1、取一片铜箔,铜箔被裁剪为3.5cm×3.5cm的尺寸,铜箔可以作为摩擦纳米发电机的电极,先对铜箔进行预处理工作,使用棉签蘸取酒精,用酒精清洁铜箔表面,将铜箔表面的灰尘和杂质擦去,然后用氮气将铜箔表面吹干;
步骤2、用电子天平称取3g的PDMS原液,然后将电子天平归零,以SiO2@Ag复合纳米颗粒掺杂质量分数为0.15%的比例再称取SiO2@Ag复合纳米颗粒,将称量好的SiO2@Ag复合纳米颗粒倒入称量好的PDMS原液中,制备成掺有SiO2@Ag复合纳米颗粒的PDMS混合溶液;
步骤3、采用搅拌器对步骤2制备的PDMS混合溶液进行搅拌,搅拌后进行脱泡处理,得到混合均匀的PDMS混合溶液;
步骤4、为了进一步分散SiO2@Ag复合纳米颗粒,将步骤3得到的混合均匀的PDMS混合溶液置于超声波分散仪中进行超声分散处理,由于超声分散处理过程中会引入部分气泡,因此,超声分散处理后再将PDMS混合溶液进行脱泡处理,得到分散SiO2@Ag复合纳米颗粒的PDMS混合溶液;
步骤5、向步骤4得到的分散SiO2@Ag复合纳米颗粒的PDMS混合溶液中滴入0.3g固化剂,然后使用搅拌器对PDMS混合溶液进行搅拌,搅拌后进行脱泡处理,得到制备好的PDMS混合溶液;
步骤6、采用旋涂仪将步骤5中制备好的PDMS混合溶液旋涂在铜箔的上表面上,在铜箔的上表面上形成一层均匀的薄膜;
步骤7、将步骤6中得到的上表面上形成一层均匀的薄膜的铜箔放置于培养皿中,为了防止铜箔上表面上的薄膜在固化的过程中受到污染,把培养皿的盖子盖好,然后将培养皿放置于真空干燥箱中进行固化处理,固化处理后将铜箔从培养皿中取出,即得到附着在铜箔上的基于复合纳米颗粒掺杂的摩擦起电薄膜。Step 7, place the copper foil with a uniform film formed on the upper surface obtained in
搅拌器为行星搅拌器,行星搅拌器为THINKY公司生产的型号为THINKY MIXER AR-100的行星搅拌器,超声波分散仪为日本SMT公司生产的型号为UH-600超声波分散仪。The stirrer is a planetary stirrer, and the planetary stirrer is a planetary stirrer of the model THINKY MIXER AR-100 produced by THINKY Company, and the ultrasonic disperser is a UH-600 ultrasonic disperser produced by Japan SMT Company.
步骤2中,PDMS原液为美国道康宁公司生产的Sylgard 184硅橡胶。In
步骤3中,搅拌器的转速为2000r/min,搅拌时间为5分钟,脱泡处理的时间为2分钟;In
步骤4中,超声分散处理的时间为5分钟,超声分散处理后再采用搅拌器将PDMS混合溶液进行脱泡处理,脱泡处理的时间为30秒;In
步骤5中,搅拌器的转速为2000r/min,搅拌时间为5分钟,脱泡处理的时间为2分钟;In
步骤6中,旋涂时,先将铜箔吸附于旋涂仪的托盘上,然后启动旋涂仪的真空泵进行旋涂操作;旋涂操作分为前﹑后两个阶段:慢速匀胶阶段和高速定型阶段;慢速匀胶阶段时,旋涂仪工作在300r/min的转速下,旋涂时间为120秒;高速定型阶段时,旋涂仪工作在1000r/min的转速下,旋涂时间为10秒;In
步骤7中,固化处理的过程为:先将真空干燥箱的温度设置为75℃,然后预热半小时,当真空干燥箱的温度稳定后,将培养皿置于真空干燥箱内,将真空干燥箱内的压强抽到一个大气压左右,干燥两个小时后,将真空干燥箱的电源关闭,待真空干燥箱内温度降为室温后,将培养皿从真空干燥箱中取出。In step 7, the curing process is: first set the temperature of the vacuum drying oven to 75°C, and then preheat for half an hour. When the temperature of the vacuum drying oven is stable, place the petri dish in the vacuum drying oven, and vacuum dry The pressure in the box is pumped to about one atmospheric pressure. After drying for two hours, turn off the power of the vacuum drying box. After the temperature in the vacuum drying box drops to room temperature, take the petri dish out of the vacuum drying box.
铜箔的下表面上附着有一层硅油纸,硅油纸具有较好的防电荷泄漏作用,并可以保护其上的铜箔的平整度;用酒精清洁铜箔表面时,要防止铜箔与硅油纸之间进入液体。A layer of silicone oil paper is attached to the lower surface of the copper foil. The silicone oil paper has a good anti-charge leakage effect and can protect the flatness of the copper foil on it; when cleaning the surface of the copper foil with alcohol, prevent the copper foil from contacting the silicone oil paper. into the liquid.
步骤7中,培养皿为铝合金培养皿;采用铝合金培养皿的原因是其具有传热性能较好,底面平整,并具有在高温不下变形等优点。In step 7, the petri dish is an aluminum alloy petri dish; the reason for using the aluminum alloy petri dish is that it has better heat transfer performance, a flat bottom surface, and has the advantages of not being deformed under high temperature.
由摩擦序列表可知,PDMS(聚二甲基硅氧烷)是一种摩擦电负性较强的材料,鉴于其具备透明度高、热稳定性能良好、加工工艺成熟等优点,选用其为负摩擦材料。It can be seen from the friction sequence table that PDMS (polydimethylsiloxane) is a material with strong triboelectric negativity. In view of its advantages such as high transparency, good thermal stability, and mature processing technology, it was selected as the negative friction material. Material.
为了保证制备的摩擦起电薄膜与电极具有较高的集成度,采用旋涂工艺将PDMS混合溶液直接旋涂在铜箔电极上,从而制备出摩擦起电薄膜与铜箔电极一体的器件。In order to ensure a high degree of integration between the prepared triboelectrification film and the electrode, the PDMS mixed solution was directly spin-coated on the copper foil electrode by a spin-coating process, thereby preparing a device in which the triboelectrification film and the copper foil electrode were integrated.
将纳米颗粒附着在分散度较好的固体机制表面,构造出复合的微球结构,得到均匀分散的金属纳米颗粒,不仅可以得到均匀分散的金属纳米颗粒,解决了金属纳米颗粒的团聚问题,而且还能够保证纳米颗粒原有的稳定性和活性。SiO2@Ag复合微球是一种复合微球结构,将成本较高的Ag纳米颗粒1均匀地负载于SiO2表面,从一定程度上减小了Ag的用量,降低了材料的成本。将粒径为5-10nm的银纳米颗粒负载在粒径为200nm的SiO2外表面,从而得到均匀分散的SiO2@Ag复合纳米颗粒,而SiO2粒子的粒径由于比较大,降低了掺杂过程中的分散难度,其结构模型如图1所示。Attaching nanoparticles to the surface of a solid mechanism with a good dispersion degree, constructing a composite microsphere structure, and obtaining uniformly dispersed metal nanoparticles, not only can obtain uniformly dispersed metal nanoparticles, but also solve the problem of agglomeration of metal nanoparticles, and It can also ensure the original stability and activity of nanoparticles. SiO 2 @Ag composite microsphere is a kind of composite microsphere structure, which uniformly loads
图2为采用传统的Ag纳米颗粒1掺杂的TENG模型,Ag纳米颗粒1的掺杂量达到一定值以后,由于其导电性,将会在介电薄膜2与下电极之间形成电荷泄漏通道,从而降低TENG的输出性能;图3采用SiO2@Ag复合纳米颗粒掺杂的TENG模型,由于Ag纳米颗粒1附着于SiO2绝缘微球表面,因此SiO2微球3将会在薄膜内部构成阻断层4,从而起到阻止电荷泄漏的作用,进而提升TENG的表面电荷密度。Figure 2 is a TENG model using
摩擦起电薄膜制备好后,可使用该摩擦起电薄膜制作摩擦纳米发电机TENG,具体制作过程为:首先,采用导线将摩擦起电薄膜的电极引出,并用绝缘胶带将四周包裹,包裹宽度为0.2mm;为了使得摩擦起电薄膜与上电极在接触的过程充分接触,采用双面胶将摩擦起电薄膜的硅油纸面粘贴在一片平面尺寸为3.5cm×3.5cm,厚度为2mm的致密泡沫上,然后将该泡沫粘贴在一片尺寸为4cm×4cm的PMMA上,从而构成摩擦纳米发电机的一侧;另一侧由粘贴在相同尺寸的PMMA上的透明银线电极构成,银线电极与摩擦起电薄膜具有相同大小的尺寸(3.5cm×3.5cm),采用导线将电极线引出;然后在两片PMMA的四个角上打出定位孔,采用热熔胶用大概1cm高度的弹簧将两片PMMA的四个角连接起来,从而构成垂直接触-分离模式的摩擦纳米发电机TENG。After the triboelectrification film is prepared, the triboelectrification film can be used to manufacture the triboelectric nanogenerator TENG. The specific manufacturing process is as follows: first, the electrodes of the triboemission film are led out with wires, and the surrounding area is wrapped with insulating tape. The wrapping width is 0.2mm; in order to make the triboelectric film fully contact with the upper electrode during the contact process, use double-sided adhesive to paste the silicone oil paper surface of the triboelectric film on a piece of dense foam with a plane size of 3.5cm×3.5cm and a thickness of 2mm Then paste the foam on a piece of PMMA with a size of 4cm×4cm to form one side of the triboelectric nanogenerator; the other side is composed of a transparent silver wire electrode pasted on the PMMA of the same size, and the silver wire electrode and The triboelectric film has the same size (3.5cm×3.5cm), and the electrode wires are led out by wires; then positioning holes are made on the four corners of the two pieces of PMMA, and the two pieces are connected by a spring with a height of about 1cm using hot melt adhesive. The four corners of the sheet PMMA are connected to form a triboelectric nanogenerator TENG in vertical contact-separation mode.
基于SiO2@Ag复合纳米颗粒掺杂的TENG性能测试:Performance test of TENG based on SiO 2 @Ag composite nanoparticles doping:
为了验证SiO2微球3与Ag纳米颗粒1在SiO2@Ag复合粒子中分别对TENG输出性能的影响,进行了两组对照试验。In order to verify the effects of SiO 2 microspheres 3 and
第1组试验:将含银量较高的SiO2@Ag复合纳米颗粒,按照不同质量分数掺入到PDMS薄膜中,进行测试,测试结果如下:The first group of experiments: SiO 2 @Ag composite nanoparticles with high silver content were mixed into the PDMS film according to different mass fractions, and tested. The test results are as follows:
从图4中可以看出基于未掺杂的PDMS纯膜的TENG的短路电流只有约25μA左右。随着SiO2@Ag复合纳米颗粒掺杂质量分数的增加,TENG的短路电流呈现出先增大后减小的趋势,其中当SiO2@Ag复合纳米颗粒的掺杂质量分数为0.3wt.%时,TENG的短路电流达到最大值,约为57μA,较未掺杂的TENG的短路电流提升了2.28倍。当SiO2@Ag复合纳米颗粒的掺杂质量分数大于0.3wt.%时,TENG的短路电流开始下降,当SiO2@Ag复合纳米颗粒的掺杂质量分数为0.5wt.%时,TENG的短路电流已经下降到30μA左右,较最大值下降率达到了47%,这可能是由于薄膜本身厚度非常薄,大概为几十微米,较大量的银含量掺杂使得薄膜上下表面出现了逾渗现象,形成了漏电流,同时增大了薄膜的介电损耗,从而器件的输出性能显著降低。It can be seen from Figure 4 that the short-circuit current of the TENG based on the undoped PDMS pure film is only about 25 μA. With the increase of the doping mass fraction of SiO 2 @Ag composite nanoparticles, the short-circuit current of TENG showed a trend of first increasing and then decreasing. When the doping mass fraction of SiO 2 @Ag composite nanoparticles was 0.3wt.% , the short-circuit current of TENG reaches a maximum value of about 57 μA, which is 2.28 times higher than that of undoped TENG. When the doping mass fraction of SiO2 @Ag composite nanoparticles is greater than 0.3wt.%, the short-circuit current of TENG begins to decrease. When the doping mass fraction of SiO2@Ag composite nanoparticles is 0.5wt.%, the short-circuit current of TENG It has dropped to about 30μA, and the drop rate from the maximum value has reached 47%. This may be due to the fact that the thickness of the film itself is very thin, about tens of microns. The leakage current is reduced, and the dielectric loss of the film is increased at the same time, so that the output performance of the device is significantly reduced.
从图5中可以看出开路电压的变化趋势与短路电路类似。基于未掺杂的PDMS纯膜的TENG的开路电压只有约215V左右。随着SiO2@Ag复合纳米颗粒掺杂质量分数的增加,TENG的开路电压呈现出先增大后减小的趋势,其中当SiO2@Ag复合纳米颗粒的掺杂质量分数为0.3wt.%时,TENG的开路电压达到最大值,约为489V,较未掺杂的TENG的开路电压提升了2.27倍。当SiO2@Ag复合纳米颗粒的掺杂质量分数大于0.3wt.%时,TENG的开路电压开始下降,当SiO2@Ag复合纳米颗粒的掺杂质量分数为0.5wt.%时,TENG的开路电压已经下降到293V左右,较最大值下降率达到了40%,下降的原因与短路电流下降的原因类似,这里不再进行赘述。It can be seen from Figure 5 that the change trend of the open circuit voltage is similar to that of the short circuit. The open circuit voltage of TENG based on undoped PDMS pure film is only about 215V. With the increase of the doping mass fraction of SiO 2 @Ag composite nanoparticles, the open circuit voltage of TENG showed a trend of first increasing and then decreasing. When the doping mass fraction of SiO 2 @Ag composite nanoparticles was 0.3wt.% , the open circuit voltage of TENG reaches the maximum value, which is about 489V, which is 2.27 times higher than that of undoped TENG. When the doping mass fraction of SiO 2 @Ag composite nanoparticles is greater than 0.3wt.%, the open circuit voltage of TENG begins to decrease, and when the doping mass fraction of SiO 2 @Ag composite nanoparticles is 0.5wt.%, the open circuit voltage of TENG The voltage has dropped to about 293V, and the drop rate has reached 40% from the maximum value. The reason for the drop is similar to that of the short-circuit current drop, so I won’t repeat it here.
第2组试验:将含银量较低的SiO2@Ag复合纳米颗粒,按照不同质量分数掺入到PDMS薄膜中,进行测试,测试结果如下:The second group of experiments: SiO 2 @Ag composite nanoparticles with low silver content were mixed into PDMS films according to different mass fractions, and tested. The test results are as follows:
从图6中可以看出其变化趋势与含银量较高的SiO2@Ag复合纳米颗粒掺杂后TENG的短路电流变化趋势类似,均是随着掺杂质量分数的增大短路电流呈现出先增大后减小的趋势,不同的是在SiO2@Ag复合纳米颗粒掺杂质量分数为0.1wt.%时,短路电流就达到了最大值,约为60.5μA,较未掺杂的TENG的短路电流提升了2.42倍。当SiO2@Ag复合纳米颗粒的掺杂质量分数大于0.1wt.%时,TENG的短路电流开始下降。一个有意思的现象是TENG的短路电流并未像含银量较高的SiO2@Ag复合纳米颗粒掺杂后TENG的短路电流那样持续的下降,而是逐渐的趋于平稳,稳定值大概在30μA左右。造成这种现象的原因可能是由于Ag的含量较低,因此在此过程中对摩擦发电机输出性能起主要作用的为SiO2微球3,而SiO2微球3是绝缘体材料,因此薄膜内部的逾渗现象较弱或者很难形成逾渗通路。It can be seen from Figure 6 that the change trend is similar to that of the short-circuit current change trend of TENG after doping with SiO 2 @Ag composite nanoparticles with high silver content. The trend decreases after increasing. The difference is that when the doping mass fraction of SiO 2 @Ag composite nanoparticles is 0.1wt.%, the short-circuit current reaches the maximum value, which is about 60.5μA, which is lower than that of the undoped TENG. The short-circuit current increased by 2.42 times. When the doping mass fraction of SiO 2 @Ag composite nanoparticles is greater than 0.1wt.%, the short-circuit current of TENG begins to decrease. An interesting phenomenon is that the short-circuit current of TENG does not decrease continuously like the short-circuit current of TENG doped with SiO 2 @Ag composite nanoparticles with higher silver content, but gradually tends to be stable, and the stable value is about 30 μA. about. The reason for this phenomenon may be due to the low content of Ag, so the main effect on the output performance of the triboelectric generator in this process is the SiO 2 microsphere 3, and the SiO 2 microsphere 3 is an insulator material, so the inside of the film The percolation phenomenon is weak or it is difficult to form a percolation path.
从图7中可以看出开路电压的变化趋势与短路电流类似,均是随着掺杂质量分数的增大短路电流呈现出先增大后减小,而后趋于平稳的趋势。在SiO2@Ag复合纳米颗粒掺杂质量分数为0.1wt.%时,开路电压就达到了最大值514V,较未掺杂的TENG的开路电压提升了2.39倍。当SiO2@Ag复合纳米颗粒掺杂质量分数大于0.1wt.%时,开路电压降低并趋于平稳,稳定值大概为389V,较未掺杂的TENG的开路电压仍有近1.81倍的提升。出现这种现象的原因与短路电流的原因类似,这里不再进行赘述。It can be seen from Figure 7 that the change trend of the open circuit voltage is similar to that of the short circuit current, both of which show a trend of first increasing and then decreasing with the increase of doping mass fraction, and then tending to be stable. When the doping mass fraction of SiO 2 @Ag composite nanoparticles is 0.1wt.%, the open circuit voltage reaches a maximum value of 514V, which is 2.39 times higher than that of undoped TENG. When the doping mass fraction of SiO 2 @Ag composite nanoparticles is greater than 0.1wt.%, the open circuit voltage decreases and tends to be stable, and the stable value is about 389V, which is still nearly 1.81 times higher than that of undoped TENG. The reason for this phenomenon is similar to the reason for the short-circuit current, and will not be repeated here.
由短路电流(I)与转移电荷量(Qsc)的关系可知:From the relationship between the short-circuit current (I) and the amount of transferred charge (Qsc), it can be known that:
QSC=∫idtQ SC = ∫idt
通过对各个掺杂质量分数下的TENG的一个周期的短路电流进行积分,即可得到各个掺杂质量分数下的TENG的一个周期内的转移电荷量。By integrating the short-circuit current of one cycle of TENG under each doping mass fraction, the amount of transferred charge in one cycle of TENG under each doping mass fraction can be obtained.
首先对含银量较高的SiO2@Ag复合纳米颗粒按照不同质量分数掺杂后的TENG的短路电流进行积分,结果如图8所示。Firstly, the short-circuit current of TENG doped with SiO 2 @Ag composite nanoparticles with higher silver content was integrated according to different mass fractions, and the results are shown in Fig. 8 .
由图8可知未掺杂的TENG一个周期内的转移电荷量为85.56nC,由于摩擦薄膜尺寸为3.5cm×3.5cm,因此可以计算出其表面电荷密度大约为:69.8μC/m2。随着含银量较高的SiO2@Ag复合纳米颗粒掺杂质量分数的增加,转移电荷量先增大后减小,在含银量较高的SiO2@Ag复合纳米颗粒掺杂质量分数为0.3wt.%时,转移电荷量达到最大值,约为229.54nC,因此可以计算出其表面电荷密度大约为187.4μC/m2,较未掺杂的TENG的表面电荷密度提升了约2.68倍。图9和图10分别显示了这两个TENG一个周期的短路电流信号,以阴影面积表示其一个周期内的转移电荷量。It can be seen from Figure 8 that the amount of charge transferred in one period of the undoped TENG is 85.56nC. Since the size of the tribofilm is 3.5cm×3.5cm, its surface charge density can be calculated to be about 69.8μC/m 2 . With the increase of the doping mass fraction of SiO 2 @Ag composite nanoparticles with higher silver content, the amount of transferred charge first increases and then decreases. When the concentration is 0.3wt.%, the amount of transferred charge reaches the maximum, which is about 229.54nC, so it can be calculated that its surface charge density is about 187.4μC/m 2 , which is about 2.68 times higher than that of undoped TENG. . Figure 9 and Figure 10 respectively show the short-circuit current signals of the two TENGs for one cycle, and the shaded area represents the amount of transferred charge in one cycle.
其次,采用相同的方法对含银量较低的SiO2@Ag复合纳米颗粒按照不同质量分数掺杂后的TENG的短路电流进行了计算,结果如图11所示。Secondly, the same method was used to calculate the short-circuit current of TENG doped with SiO 2 @Ag composite nanoparticles with lower silver content according to different mass fractions, and the results are shown in Figure 11.
银含量较低的SiO2@Ag复合纳米颗粒掺杂后TENG的转移电荷量,其变化趋势与其所对应的短路电流的变化趋势相似,随着含银量较低的SiO2@Ag复合纳米颗粒掺杂质量分数的增加,转移电荷量先增大后减小,然后趋于平稳的状态,在含银量较低的SiO2@Ag复合纳米颗粒掺杂质量分数为0.1wt.%时,转移电荷量达到最大值,约为295.27nC,因此可以计算出其表面电荷密度大约为241μC/m2,较未掺杂的TENG的表面电荷密度提升了约3.45倍。图12显示了含银量较低的SiO2@Ag复合纳米颗粒掺杂质量分数为0.1wt.%时的TENG一个周期的短路电流信号,以阴影面积表示其一个周期内的转移电荷量。The change trend of the transfer charge of TENG after doping SiO2 @Ag composite nanoparticles with low silver content is similar to that of the corresponding short-circuit current. With the increase of impurity mass fraction, the amount of transferred charge first increases and then decreases, and then tends to a stable state. When the doping mass fraction of SiO 2 @Ag composite nanoparticles with low silver content is 0.1wt.%, the transferred charge The amount reaches the maximum, about 295.27nC, so it can be calculated that its surface charge density is about 241μC/m 2 , which is about 3.45 times higher than that of undoped TENG. Figure 12 shows the short-circuit current signal of one cycle of TENG when the doping mass fraction of SiO 2 @Ag composite nanoparticles with low silver content is 0.1wt.%. The shaded area represents the amount of transferred charge in one cycle.
由以上分析可知,对于含银量较高的SiO2@Ag复合纳米颗粒掺杂质量分数为0.3wt.%时的TENG输出性能最优,而对于含银量较低的SiO2@Ag复合纳米颗粒掺杂质量分数为0.1wt.%时的TENG输出性能最优,因此进一步对TENG的输出功率及其对电容充电性能测试,用以分析掺杂后TENG的输出功率提升效果,测试结果如图13、图14、图15和图16所示。From the above analysis, it can be seen that the TENG output performance is the best when the doping mass fraction of SiO 2 @Ag composite nanoparticles with higher silver content is 0.3wt.%, while for the SiO 2 @Ag composite nanoparticles with lower silver content The TENG output performance is optimal when the particle doping mass fraction is 0.1wt.%. Therefore, the output power of TENG and its charging performance to capacitors are further tested to analyze the effect of TENG output power improvement after doping. The test results are shown in the figure 13, Figure 14, Figure 15 and Figure 16.
通过测试不同负载下各个TENG的输出电压,然后利用输出电压与负载阻值计算其瞬时功率值,从而推得每个TENG的最优输出功率。图13为未经掺杂的TENG的输出功率,其在20MΩ的负载下峰值输出功率最大,约为1.07mW;图14为含银量较高的SiO2@Ag复合纳米颗粒掺杂质量分数为0.3wt.%时的TENG的输出功率,通过计算其在5MΩ的负载下峰值输出功率最大,为7.69mW,较未经掺杂的TENG的输出功率提升了约7.18倍;图15为含银量较低的SiO2@Ag复合纳米颗粒掺杂质量分数为0.1wt.%时的TENG在不同负载下的输出特性,通过计算其在5MΩ的负载下峰值输出功率最大,为8.45mW,较未经掺杂的TENG的输出功率提升了约7.9倍;实验结果表明进行SiO2@Ag复合纳米颗粒掺杂后TENG的输出功率提升的同时,阻抗有了明显的下降,这对TENG的后续应用至关重要。图16为不同的TENG在相同外界激励下对10μF电容的充电特性,从中可以看出未经掺杂的TENG将10μF电容充到3V大约需要100s的时间,而含银量较高的SiO2@Ag复合纳米颗粒掺杂质量分数为0.3wt.%时的TENG将10μF电容充到3V大约只需要十几秒,而含银量较低的SiO2@Ag复合纳米颗粒掺杂质量分数为0.1wt.%时的TENG将10μF电容充到3V大约只几秒,充电效率得到了大幅度的提升。By testing the output voltage of each TENG under different loads, and then using the output voltage and load resistance to calculate its instantaneous power value, the optimal output power of each TENG can be derived. Figure 13 shows the output power of the undoped TENG, which has the largest peak output power of about 1.07mW under a load of 20MΩ ; The output power of TENG at 0.3wt.%, by calculation, its peak output power is 7.69mW under a load of 5MΩ, which is about 7.18 times higher than that of undoped TENG; Figure 15 shows the silver content The output characteristics of TENG under different loads when the doping mass fraction of SiO 2 @Ag composite nanoparticles is 0.1wt.%, the peak output power is the largest at 5MΩ load, which is 8.45mW, which is higher than that without The output power of the doped TENG is increased by about 7.9 times; the experimental results show that the output power of the TENG after doping with SiO 2 @Ag composite nanoparticles is increased, and the impedance is significantly reduced, which is very important for the subsequent application of TENG. important. Figure 16 shows the charging characteristics of different TENGs on a 10μF capacitor under the same external excitation. It can be seen that it takes about 100s for the undoped TENG to charge a 10μF capacitor to 3V, while the SiO 2 @ When the mass fraction of Ag composite nanoparticles is 0.3wt.%, it only takes about a dozen seconds to charge a 10 μF capacitor to 3V, while the SiO 2 @Ag composite nanoparticles with a lower silver content doping mass fraction is 0.1wt. .% TENG can charge a 10μF capacitor to 3V for only a few seconds, and the charging efficiency has been greatly improved.
通过以上实验可以发现含银量较低的SiO2@Ag复合纳米颗粒掺杂后的TENG输出要优于含银量较高的SiO2@Ag复合纳米颗粒掺杂后的TENG的输出,这是因为复合纳米颗粒中SiO2微球3不仅起到了提高金属纳米颗粒分散度以及材料介电性等作用,同时对预防逾渗电流有一定的效果。Through the above experiments, it can be found that the output of TENG doped with SiO 2 @Ag composite nanoparticles with lower silver content is better than that of TENG doped with SiO 2 @Ag composite nanoparticles with higher silver content, which is Because the SiO 2 microspheres 3 in the composite nanoparticles not only play a role in improving the dispersion of the metal nanoparticles and the dielectric properties of the material, but also have a certain effect on preventing percolation current.
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