CN112546798A

CN112546798A - Semiconductor engineering reaction byproduct collecting device with cooling flow path

Info

Publication number: CN112546798A
Application number: CN201910912261.3A
Authority: CN
Inventors: 赵宰孝; 李娟周; 韩明必
Original assignee: Future Treasure
Current assignee: Future Treasure
Priority date: 2019-09-25
Filing date: 2019-09-25
Publication date: 2021-03-26
Anticipated expiration: 2039-09-25
Also published as: CN112546798B

Abstract

The invention relates to a reaction byproduct collecting device for semiconductor engineering, which is provided with a cooling flow path, wherein the reaction byproduct collecting device is assembled by a main cooling flow path penetrating through an internal collecting tower, an inner wall plate arranged on the inner wall of a shell and gas hole plates with different sizes, so that the device can cool the inflowing exhaust gas and form a vortex at the same time, thereby collecting the reaction byproducts condensed in high density. The method comprises the following steps: a housing having an inner wall formed with an inner wall plate for forming a vortex of an exhaust gas having a temperature adjusted by a heater and flowing in through a gas inlet of the upper plate and collecting reaction by-products; an internal collection tower assembled from a vertical plate, an upper side panel, and a vortex plate embedded in the vertical plate; a main cooling flow path which passes through the internal collection tower and cools the exhaust gas by using cooling water; and multiple connecting pipes for circularly supplying and discharging cooling water to the upper plate cooling flow path and the main cooling flow path in sequence.

Description

Semiconductor engineering reaction byproduct collecting device with cooling flow path

Technical Field

The present invention relates to a reaction byproduct collecting apparatus for semiconductor engineering equipped with a cooling flow path, and more particularly, to a collecting apparatus which introduces a cooling flow path directly into an inner space in order to effectively collect reaction byproducts from exhaust gas components exhausted after use in a process chamber for manufacturing a semiconductor, thereby improving reaction byproduct collecting efficiency of an inner collecting tower.

Background

Generally, a semiconductor manufacturing process generally includes a front engineering (Fabrication) process and a back engineering (Assembly) process.

The pre-process is a semiconductor Chip (Chip) manufacturing process for processing a specific pattern by repeatedly performing a process of depositing a thin film on a Wafer (Wafer) and selectively etching the deposited thin film inside various process chambers (chambers).

The post process is a package (package) process in which chips manufactured on a wafer in the pre process are individually diced and separated, and then bonded to a lead frame to form a finished product.

Specifically, the pre-process is a process of depositing a thin film on a wafer or etching a thin film deposited on a wafer, and for this purpose, a reaction gas such as SiH4 (Silane), Arsine (Arsine), boron chloride, hydrogen, WF6 (Tungsten hexafluoride), or the like is injected into the process chamber, and then the process is performed at a high temperature. At this time, a large amount of harmful gases containing various flammable gases, corrosive foreign materials, and toxic components, etc. are generated inside the process chamber.

In order to be able to exhaust after the harmful gas is purified as described above, a vacuum pump for converting the process chamber into a vacuum state and a Scrubber (Scrubber) for purifying the exhaust gas exhausted from the process chamber at the rear end of the vacuum pump and then exhausting to the atmosphere are provided in the semiconductor manufacturing apparatus.

However, since the scrubber can only purify and treat the reaction by-products in the form of gas, when the reaction by-products are solidified after being exhausted to the outside of the process chamber, various problems such as an increase in pressure of the exhaust gas due to adhesion in the exhaust pipe, a malfunction of the pump due to inflow to the vacuum pump, or contamination of the wafer due to backflow of harmful gas into the process chamber may be caused.

To this end, the semiconductor manufacturing apparatus condenses exhaust gas exhausted from the process chamber by installing a reaction byproduct collecting apparatus between the process chamber and the vacuum pump.

The reaction byproduct collecting apparatus is connected to the process chamber and the vacuum pump through the pump tube, so as to condense and collect the particulate reaction byproducts contained in the exhaust gas discharged after the reaction in the process chamber.

Generally, the reaction byproduct collecting apparatus has a structure including: a housing that provides a space for accommodating the exhaust gas that flows in; an upper plate for covering the upper part of the housing and forming a cooling flow path for maintaining a proper temperature for protecting the O-ring and collecting the reaction by-products; an inner collecting tower for condensing and collecting reaction by-products contained in the exhaust gas flowing into the inside of the outer shell; and a heater for adjusting to an appropriate temperature distribution at which the exhaust gas flowing into the interior of the housing can be adjusted to form a reaction by-product.

In the collecting apparatus constructed as described above, it is most important that each plate surface constituting the internal collecting tower installed inside the housing is uniformly brought into contact with the exhaust gas so that the particulate noxious substances contained in the exhaust gas can be condensed and collected as reaction by-products more efficiently and rapidly.

However, the conventional reaction byproduct collecting apparatus employs a method of collecting high-temperature exhaust gas, which is adjusted to have an appropriate temperature distribution of reaction byproducts by a heater while flowing into the inside of the housing, by contacting the surface of the plate of the internal collecting tower, or a method of collecting exhaust gas by contacting the surface of the plate of the internal collecting tower by uniformly diffusing the flowing exhaust gas into the inside of the housing by changing the flow of the exhaust gas by a propeller, thereby causing a problem of a decrease in collecting efficiency because the temperature of the inner side plate of the inner collecting tower is higher than that of the outer side plate, but also causes a problem of insufficient contact with the surface of the plate because the exhaust gas cannot smoothly flow into the inside and uniformly spread, and finally, to a structural problem in that the inflow exhaust gas is condensed as a reaction by-product for an excessively long time.

Prior art documents

Patent document

(patent document 0001) Korean registered patent publication registration No. 10-0717837(2007.05.07.)

(patent document 0002) Korean registered patent publication registration No. 10-0862684(2008.10.02.)

(patent document 0003) Korean registered patent publication registration No. 10-1447629(2014.09.29.)

(patent document 0004) Korean registered patent publication registration No. 10-1806480(2017.12.01.)

Content of patent

The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide a reaction byproduct collecting apparatus which is provided with an internal collecting tower assembled by a main cooling flow path penetrating the internal collecting tower, an inner wall plate attached to an inner wall of a housing, and a gas hole plate having different sizes, and which cools an inflow exhaust gas and forms a vortex to collect reaction byproducts condensed at high density.

In order to achieve the above-mentioned objects and to solve the problems of the prior art, the present invention provides a semiconductor process reaction byproduct collecting apparatus having a cooling flow path, comprising: the semiconductor engineering reaction byproduct collecting device which is arranged on a pipeline between a process chamber and a vacuum pump and is used for collecting reaction byproducts in exhaust gas exhausted from the process chamber comprises:

a housing which accommodates the exhaust gas flowing in through an upper plate having a gas inlet and an upper plate cooling passage and discharges the gas through a lower plate having a gas outlet, wherein an inner wall plate for forming a vortex of the exhaust gas flowing in through the gas inlet of the upper plate and having a temperature adjusted by a heater and collecting reaction by-products is formed on an inner wall of the housing;

an inner collection tower installed inside the housing at an upper portion spaced apart from the lower plate by a certain distance, assembled by a plurality of vertical plates for forming an installation space of the main cooling flow path, an upper side plate covering upper sides of the vertical plates for inducing a flow of the exhaust gas and forming a vortex, and a vortex plate embedded in the vertical plates, for condensing the exhaust gas and collecting reaction byproducts;

a main cooling flow path which passes through the internal collection tower and cools the exhaust gas with cooling water; and the number of the first and second groups,

and a multi-connection pipe for circulating and discharging cooling water to the upper plate cooling flow path and the main cooling flow path in sequence by a supply pipe and a discharge pipe installed outside the housing.

In a preferred embodiment, inner wall plates are formed on each of the inner walls of the housing at regular intervals across the upper and lower regions, the inner wall plates formed on the adjacent surfaces are installed to be staggered with each other, and are installed to be staggered with each other up and down on each side surface by a length smaller than the horizontal length of the corresponding surface.

In a preferred embodiment, the upper plate cooling flow path formed in the upper plate may allow cooling water supplied from the outside to flow in through one side branch insertion opening connected to the cooling water flow inlet of the multiple connection pipes and circulate, and then to be discharged to the multiple connection pipes through the other side branch insertion opening and circulate to one side of the main cooling flow path.

As a preferred embodiment, the internal collection tower may include: a plurality of vertical plates arranged at a certain interval; the upper side vertical plates are used for covering the upper sides of the vertical plates; a base plate for supporting the lower portion of each vertical plate; and eddy current plate inserted into each vertical plate in horizontal direction;

wherein, air holes for exhaust gas to move are respectively formed on the surfaces of the vertical plate, the upper side panel, the base plate and the vortex plate,

more than one duct channel for the main cooling flow path to pass through is vertically formed on the vertical plate, so that the upper and lower positions of the main cooling flow path can be easily adjusted when the U-shaped duct-shaped main cooling flow path is installed.

As a preferred embodiment, it is possible to extend the stagnation time of the flow of the exhaust gas while forming the vortex by forming horizontal plates protruded to the outside on the vertical plates at both sides of the inner collecting tower.

In a preferred embodiment, a plurality of air holes having different sizes are formed in a row on the surface of the upper side plate, and the amount of exhaust gas flowing from the upper portion is larger at the outer side than at the central portion by making the air holes formed at both ends of the long side larger than the other air holes formed at other positions.

In a preferred embodiment, the air holes formed in the vertical plate are larger than the air holes formed in the vortex plate.

In a preferred embodiment, the main cooling flow path may have a U-shaped pipe shape including horizontal pipes arranged vertically and bent pipes connecting the horizontal pipes at one side.

In a preferred embodiment, the main cooling flow path may be formed in a plurality of two or more.

As a preferred embodiment, the multi-connection pipe can be discharged to the supply pipe of the multi-connection pipe through the other side branch insertion opening after flowing in and circulating through the one side branch insertion opening of the upper plate cooling flow path connected to the cooling water flow inlet and supplied to the main cooling flow path through the branch insertion opening located at the lower portion. And a discharge pipe for discharging the cooling water flowing into the lower horizontal pipe of the main cooling flow path to the outside after cooling the exhaust gas around the inner collecting tower while the cooling water flows through the horizontal pipe. Next, the discharge will be performed through a cooling water discharge port located at the end of the discharge pipe.

As a preferred embodiment, the multiple connection pipes can simultaneously supply the cooling water collected in the inner space portion of the cooling water chamber located at the lower portion to the two or more supply pipes located at the lower portion by one supply pipe or discharge the cooling water after heat exchange discharged in the inner space portion of the cooling water chamber located at the upper portion through one discharge pipe by providing the cooling water chambers, each of which is internally formed with a space portion, at the lower portion and the upper portion where the supply pipe and the discharge pipe are located, when the multiple connection pipes are provided with two or more main cooling flow paths.

As a preferred embodiment, the heater further comprises: and a heat distribution plate installed at a lower portion of the heater with a certain interval from the lower portion of the heater through a coupling portion, and supplying a part of the exhaust gas to an upper portion side of an inner collection tower positioned at the lower portion and supplying the remaining exhaust gas to an inner wall direction of the casing positioned at a side by forming a plurality of gas holes at an outer side.

The reaction-byproduct collecting apparatus to which the present invention is applied, having the above-described features, can collect the reaction byproducts condensed at high density in the internal collection tower by cooling and adjusting the exhaust gas, having its temperature adjusted by the heater after flowing into the inside of the outer shell, to an optimum temperature suitable for collecting the reaction byproducts by providing the main cooling flow path penetrating the internal collection tower.

Further, it is possible to form a vortex flow of the inflowing exhaust gas and uniformly diffuse it while extending a dead time through the internal collection tower by an assembly structure among the vertical plate, the upper side panel and the vortex plate constituting the internal collection tower and a pore structure of different sizes formed at the surface thereof, thereby collecting reaction byproducts condensed at high density in the exhaust gas.

As described above, the present invention is a useful invention having various effects, and has a good industrial application prospect.

Drawings

FIG. 1 is a perspective view of a reaction byproduct collecting apparatus to which an embodiment of the present invention is applied.

FIG. 2 is an exploded perspective view of a reaction byproduct collecting apparatus to which an embodiment of the present invention is applied.

FIG. 3 is a front cross-sectional view of a reaction byproduct collecting apparatus to which an embodiment of the present invention is applied.

FIG. 4 is a side view of a reaction byproduct collecting apparatus to which an embodiment of the present invention is applied.

FIG. 5 is a plan view of a reaction byproduct collecting apparatus to which an embodiment of the present invention is applied.

Fig. 6 is a schematic diagram illustrating a vertical plate to which an embodiment of the present invention is applied.

FIG. 7 is a schematic diagram illustrating the type of vortex plate to which the present invention is applicable.

FIG. 8 is an oblique view of a primary cooling circuit to which an embodiment of the present invention is applicable.

Fig. 9 is a schematic diagram illustrating the reaction-byproduct collecting tendency in each region of the reaction-byproduct collecting apparatus to which one embodiment of the present invention is applied.

[ notation ] to show

110: outer casing

111: inner wallboard

120: upper plate

121: gas inlet

122: upper plate cooling flow path

123: flow path cover

130: lower plate

131: gas discharge port

132: support rod

140: heating device

141: heat distribution plate

142: power supply part of heater

150: internal collection tower

151: vertical plate

152: upper side panel

153: foundation plate

154: vortex plate

160: main cooling flow path

170: multiple connecting pipeline

170 a: cooling water inlet

170 b: cooling water discharge port

171: supply pipe

172: discharge pipe

173: branch socket

174: cooling water cavity cooling flow path

1411. 1511, 1521, 1531, 1541: air hole

1512. 1522, the method comprises the following steps: embedded part

1513. 1542: embedded sheet

1514. 1532: pipeline trough

1601: horizontal pipe

1602: bending tube

Detailed Description

Next, the configuration of an embodiment to which the present invention is applied and the operation thereof will be described in detail below with reference to the drawings. In addition, in the course of describing the present invention, when it is determined that detailed description on related well-known functions or configurations may cause the gist of the present invention to become unclear, detailed description thereof will be omitted.

Fig. 1 is an oblique view of a reaction-byproduct collecting apparatus to which an embodiment of the present invention is applied, fig. 2 is an exploded oblique view of the reaction-byproduct collecting apparatus to which an embodiment of the present invention is applied, fig. 3 is a front sectional view of the reaction-byproduct collecting apparatus to which an embodiment of the present invention is applied, fig. 4 is a side view of the reaction-byproduct collecting apparatus to which an embodiment of the present invention is applied, fig. 5 is a plan view of the reaction-byproduct collecting apparatus to which an embodiment of the present invention is applied, fig. 6 is a schematic diagram illustrating a vertical plate to which an embodiment of the present invention is applied, fig. 7 is a schematic diagram illustrating a type of a whirl plate to which the present invention is applied, and fig. 8 is an oblique view of a main cooling flow path to which an embodiment of the present invention is applied.

As shown in the drawing, the reaction by-product collecting apparatus with a cooling flow path for semiconductor process of the present invention is an apparatus for condensing and collecting particulate toxic gas contained in exhaust gas exhausted from a process chamber of a semiconductor process and then exhausting the exhaust gas to a vacuum pump side, and more particularly, an apparatus capable of uniformly condensing particulate toxic gas contained in exhaust gas components exhausted after performing processes such as titanium nitride atomic layer deposition (TiN-ALD) and Chemical Vapor Deposition (CVD) on an inner collecting apparatus and a housing surface into high-density reaction by-products.

The constitution can substantially include: a housing 110 for accommodating the inflow exhaust gas and then discharging the same, the housing having an inner wall formed with an inner wall plate 111 for forming a vortex of the inflow exhaust gas and collecting reaction by-products;

an upper plate 120 covering an upper portion of the housing, supplying exhaust gas into the housing through a gas inlet port, and forming an upper plate cooling flow path for protecting an O-Ring (O-Ring);

a lower plate 130 covering a lower portion of the housing, and discharging exhaust gas from which reaction by-products are removed through a gas discharge port;

a heater 140 for adjusting the exhaust gas flowing into the interior of the housing to an appropriate temperature distribution at which reaction by-products can be formed and uniformly distributing the exhaust gas to the periphery;

an inner collection tower 150 installed inside the housing at an upper portion spaced apart from the lower plate, assembled by a plurality of vertical plates forming an installation space of the main cooling flow path, an upper side plate covering upper sides of the vertical plates to induce a flow of the exhaust gas and form a vortex, and a vortex plate embedded in the vertical plates, for condensing the exhaust gas and collecting reaction byproducts;

a main cooling flow path 160 which penetrates the internal collection tower 150 and cools the exhaust gas with cooling water; and the number of the first and second groups,

the multiple connection pipe 170 circulates and discharges cooling water to and from the upper plate cooling flow path and the main cooling flow path in this order by a supply pipe and a discharge pipe installed outside the housing.

In order to prevent corrosion and the like caused by the exhaust gas discharged from the process chamber in the reaction-byproduct collecting apparatus to which the present invention is applied as described above, most of the components are made of one of stainless steel, aluminum, or corrosion-resistant metal, which can prevent corrosion.

Next, each configuration constituting the above-described reaction byproduct collecting means will be described in more detail.

The housing 110 has a Box (Box) shape with a hollow inside, and functions as a gas flow path space for condensing and collecting the exhaust gas flowing into the internal collection tower 150 installed inside.

The upper and lower portions of the casing 110 are opened, and after the internal collecting tower 150 is received and mounted, the opened upper and lower space portions are covered with the upper and lower plates, and then fixed by a coupling portion such as a bolt.

Inner wall plates 111 are formed on each inner wall surface of the housing 110 at regular intervals across upper and lower regions, and the reaction by-products are collected while forming a vortex of the exhaust gas flowing in.

The stagnant and irregular gas flow generated when the inner wall panel 111 collides with the exhaust gas and the gas flow of the peripheral exhaust gas having a faster flow rate that does not collide with the inner wall panel 111 are mixed with each other and form a vortex.

Further, the inner wall plate 111 and the inner wall plates 111 formed on the adjacent surfaces are installed to be staggered with each other, whereby the exhaust gas flowing on each surface and the adjacent exhaust gas collide with the inner wall plate 111 at different positions, thereby forming a vortex due to the flow inconsistency therebetween.

Further, the inner wall plates 111 are installed on each side of the housing to be staggered up and down with each other by a length smaller than the horizontal length of the corresponding side, thereby forming a vortex due to a flow inconsistency between the side where the inner wall plates 111 are installed and the side where they are not installed.

By installing the inner wall plates as described above across the upper and lower regions of the inner wall, the exhaust gas flowing into the inner wall of the housing can be made to swirl on the side of the wall surface and the flow rate thereof can be slowed down, so that the temperature of the external gas is efficiently transmitted through the inner wall plates 111 and thereby cooled uniformly, and at this time, the reaction by-products will be prevented from condensing on the housing, and particularly, higher density condensation will be achieved on the inner wall plates 111 by virtue of the edge effect.

The upper plate 120 functions as a cover for covering the upper portion of the case 110, the upper portion of which is open, and the gas inlet 121 is formed to protrude from the upper portion of the gas hole and fixed by welding or the like, so that the exhaust gas flows in. The gas inlet 121 receives exhaust gas exhausted from the process chamber and supplies the exhaust gas to the inside of the housing.

Further, in order to prevent an O-Ring (O-Ring) installed at the lower portion of the upper plate to achieve airtightness from being deformed and thus causing a reduction in its function when the heater 140 installed at the bottom surface is operated to adjust the temperature of the inner space of the housing 110, and in order to provide an appropriate temperature suitable for collecting reaction byproducts by cooling the exhaust gas, which is heated to a high temperature state by the heater after flowing into the lower portion of the upper plate, the upper plate cooling flow path 122 is formed in a groove shape on the upper surface of the upper plate. Further, water tightness is achieved by covering the upper portion of the upper plate cooling flow path in which the concave groove is formed with the flow path cover 123. For this reason, the channel cover can be joined by a sealing treatment method for achieving water tightness, which is not shown, and a known joining method such as an insertion type, a welding type, and a bolt joining method may be used as a joining method.

The upper plate cooling flow path 122 allows cooling water supplied from the outside to flow in through the one-side branched socket 173 connected to the cooling water inlet 170a of the multiple connection pipe 170 and circulate, and then to be discharged through the other-side branched socket 173 to the multiple connection pipe and to be supplied to and circulated to the main cooling flow path 160. In order to avoid mixing of the cooling water that flows in and the cooling water that is discharged, it is possible to avoid communication by forming a boundary portion in the upper plate cooling passage 122. As the cooling water, water or a refrigerant can be used.

The lower plate 130 functions as a cover for covering the lower portion of the case 110 having an open lower portion, and the lower portion of the gas hole is protruded and fixed to the gas outlet 131 by welding or the like at a certain position. The gas exhaust port is a passage through which exhaust gas after the reaction by-products are collected and removed is exhausted.

In addition, a plurality of support rods 132 protruding in an upper direction of the inside of the housing are installed at a plurality of positions of the lower plate 130 to fix the internal collection tower 150 to an upper portion spaced apart from the lower plate 130 at a certain interval and support a load thereof. One part of the support bars 132 is used to space the base plate located at the lowermost end of the inner collection tower 150 from the lower portion of the outer case, and the other part supports the vortex plate protruding outward by crossing the vertical plate installed at the outermost side of the inner collection tower 150.

The support rod 132 and the inner collecting tower may be coupled by a simple insertion coupling method, a coupling member such as a separate bolt, or various other known coupling methods.

The heater 140 is coupled to a bottom surface side of the gas inlet port 121 formed in the upper plate by a coupling method such as a bolt or welding, thereby adjusting the exhaust gas flowing into the inside of the case 110 to an appropriate temperature distribution suitable for forming reaction byproducts.

In addition, the heater 140 further includes a heat distribution plate 141 installed at a certain interval from the lower portion by a coupling means. The heat distribution plate 141 can transfer a heat source generated in the heater to a far side of the lower space of the upper plate while preventing the heat source from being directly transferred to the upper portion of the inner collection tower.

The size of the heat distribution plate 141 formed with a plurality of air holes at the outer side is larger than the size of the heater and the upper area of the inner collection tower 150 positioned at the lower portion thereof.

The heat distribution plate formed in the above-described manner can supply a part of the exhaust gas passing through the gas holes 1411 formed at the outside to the upper side of the inner collection tower located at the lower portion thereof and supply the remaining exhaust gas to the inner wall direction of the outer shell located at the side.

As a coupling method between the heat distribution plate and the heater, a bolt coupling method can be employed. Since other coupling structures may be employed in a known coupling manner, detailed descriptions thereof will be omitted.

When the heater power supply unit 142 including the temperature sensor mounted on the upper surface of the upper plate is supplied with power from the heat source of the heater 140, the heater generates heat at a set temperature.

The temperature of the heater can be set differently according to the type of exhaust gas. As a material of the heater, for example, ceramics or inconel which can prevent corrosion due to exhaust gas is used, and the basic shape thereof is a configuration in which a plurality of radiating fins (or radiating plates) are arranged in a radial shape which can uniformly radiate a heat source.

The heater functions to prevent the exhaust gas discharged from the process chamber from being condensed and blocked when flowing in through the gas inlet 121 formed at the upper plate and being condensed to the maximum extent when reaching the inner collecting tower 150.

The heater having the above-described structure can uniformly condense the exhaust gas after the temperature adjustment by uniformly supplying the exhaust gas to the inner space of the housing.

Further, another reason for providing the above-described heat distribution plate 141 is that, as semiconductor manufacturing engineering changes, when the content of lighter gas contained in the exhaust gas exhausted from the process chamber is higher than that of heavier gas, the cooling rate of the temperature of the exhaust gas far from the heater is greater than that of the exhaust gas close to the heater, so that a portion of the upper side surface may be condensed into high-density reaction by-products and thus clog the flow path of the space portion before reaching the collection tower and being captured, and a portion of the upper side surface may be formed into low-density porous reaction by-products and clog the flow path of the space portion when being further cooled to a lower temperature, while the heat source can be conducted to a further position by disposing the heat distribution plate 141 at the lower portion of the heater and thereby preventing the phenomenon as described above.

The internal collection tower 150 is configured to be housed in the casing 110, and is capable of collecting the exhaust gas as a high-density reaction by-product by condensing the exhaust gas by increasing a contact flow path and a dead time with the exhaust gas.

For this purpose, the internal collection column is constructed so as to include: a plurality of vertical plates 151 disposed at a predetermined interval; an upper vertical plate 152 for covering an upper side of each vertical plate; a base plate 153 for supporting a lower portion of each vertical plate; and a vortex plate 154 inserted into each of the vertical plates in a horizontal direction in a crossing manner.

Air holes 1511, 1521, 1531, 1541 for moving the exhaust gas are formed in the surfaces of the vertical plate 151, the upper side plate 152, the base plate 153, and the vortex plate 154, respectively. The air holes formed in the vertical plate are relatively larger than the air holes formed in the other upper side panel, the base plate, and the vortex plate, so that the exhaust gas can be more easily moved laterally.

The vertical plate 151 is provided with an insertion portion 1512 and an insertion piece 1513 in addition to the air hole 1511, and is thereby interferingly coupled with the upper side plate and the vortex plate. The embedding parts are formed at certain intervals along the vertical direction and the horizontal direction, and the vortex plates can be embedded in the horizontal direction. The embedded sheet is formed at the upper end and can be embedded and combined with the upper side panel.

Further, one or more duct channels 1514 through which the main cooling flow paths are arranged at regular intervals are vertically formed in each of the vertical plates so as to be freely installed without interference when adjusting the vertical positions of the U-shaped side shaped main cooling flow paths. The duct groove 1513 is closed at the upper portion and opened only at the lower portion.

A plurality of air holes 1521 having different sizes are formed in the surface of the upper plate 152, and the amount of exhaust gas flowing in from the upper portion is larger at the outer side than at the central portion by making the air holes formed at the ends of the long sides larger than the other air holes formed at other positions. The difference in flow rate can be created by the difference in pore size as described above, so that the exhaust gas flowing in the inner space of the inner collection tower forms a vortex.

In addition, a plurality of insertion portions 1522 into which the vertical plate 151 located below the upper panel is inserted are formed in the upper panel in a row in addition to the air holes. The two side ends of the embedding part in the long side direction are formed in a groove shape, and the other side ends are formed in a hole shape, so that the embedding piece formed at the upper end of the vertical plate positioned at the lower part can be assembled. Further, the embedded joint portion can be additionally welded.

The base plate 153 has air holes 1531 having different sizes through which the exhaust gas flows, so that the load is supported by supporting the lower portions of all the vertical plates in contact while the exhaust gas flows up and down, and the heat source of the exhaust gas is prevented from being directly transmitted to the lower plate by a certain interval between the supporting rods formed at the lower plate and the lower portion of the housing.

In addition, the base plate 153 can also function to prevent clogging due to reaction by-products falling directly to the gas discharge port 131.

In addition, one or more duct channels 1532 for installing the main cooling flow path 160 through the inner space of the inner collecting tower are formed in the base plate 153 in addition to the air holes to prevent interference when the lower side duct of the main cooling flow path is installed. The duct groove 1532 is opened only in one side direction of the base plate 152 a.

The swirl plate 154 is formed with two or more fitting pieces 1542 in addition to the gas holes 1541 through which the exhaust gas can move, and is fitted and coupled to an arbitrary fitting portion formed in the vertical plate. The combining direction of the vortex plate is installed on the vertical plate along the horizontal direction, so that the exhaust gas moving up and down forms a vortex.

In this case, the plurality of swirl plates are alternately installed at different height positions between the adjacent vertical plates, and by adopting the alternate installation method as described above, the exhaust gas rapidly descends in the gap between the opposite vertical plates, which is inaccessible by the length of the swirl plates, so that the exhaust gas flows through the gap between the vertically arranged swirl plates and the vertical plates in a staggered manner. By means of the rapid flow of the exhaust gas as described above, the formation of the vortex can be assisted around the tip end portion of the whirl plate in addition to the vortex generated on the whirl plate.

The insert pieces 1542 may be formed to protrude two or three on one side surface according to the type of the whirl plate, and maintain a stable coupling state by being inserted into two or three positions of the insert portion formed on the vertical plate. Furthermore, the number of insert pieces can take different embodiments depending on the size or shape of the whirl plate.

In the vertical plate 151, the upper side panel 152, the base plate 153, and the whirl plate 154 constituting the inner collecting tower 150 described above, the gas holes 1511 formed in the vertical plate 151 are relatively larger than the gas holes 1541 formed in the whirl plate 154, thereby making the inflow of the exhaust gas smoother.

In contrast, the gas holes 1541 formed on the whirl plate 154 are relatively smaller than the gas holes 1511 formed on the vertical plate 151, so that inflow of the exhaust gas in the vertical direction is relatively small, and thereby the exhaust gas is uniformly diffused in the inside of the internal collection tower while extending the dead time and forming the whirl.

By uniformly diffusing the exhaust gas in the manner as described above, it is possible to make the exhaust gas cooled by the main cooling flow passage 160 promote the condensation of the exhaust gas by surface contact and the edge effect of the mutually convex structure while making the exhaust gas flowing into the inner collection tower form a vortex and thereby improve the collection efficiency.

The main cooling flow path 160 is in the shape of a flat-lying "U" shaped pipe. Specifically, the present invention includes a horizontal tube 1601 configured vertically and a bent tube 1602 connecting the horizontal tubes at one side. The number thereof can be one or more.

The horizontal pipe penetrates the upper and lower sides of the inner capturing tower 150 to cool the temperature of the exhaust gas around the upper and lower regions.

The cooling water supplied from the main cooling flow path 160 is discharged to the external multi-connection pipe through the horizontal pipe located at the upper portion after being supplied through the horizontal pipe located at the lower portion.

In this case, the temperature of the cooling water flowing through the main cooling passage can be adjusted according to the type of the exhaust gas flowing in. Therefore, the temperature of the cooling water is not particularly limited in the present invention.

The present invention, which is suitable for an embodiment, improves cooling efficiency by providing two main cooling flow paths. In addition, two or more main cooling flow paths can be provided. By adopting the configuration having a plurality of configurations as described above, the temperature of the exhaust gas flowing through the internal collection tower can be cooled in a shorter time. With the above-described configuration, the reaction by-products can be condensed at a high density on the surfaces of the vertical plates, the upper side plates, the base plate, and the vortex plate constituting the internal collection tower 150.

In addition, the main cooling flow path 160 configured as described above can condense reaction by-products contained in the exhaust gas on the surface by uniformly cooling the internal collection tower, and can contact the exhaust gas on the surface of the main cooling flow path to collect the reaction by-products, thereby improving the overall collection efficiency.

The multiple connection pipe 170 may be composed of a cooling water supply pipe 171 and a discharge pipe 172 that are connected to respective branch sockets 173 installed at positions where cooling water is supplied to the upper plate cooling flow path and the main cooling flow path and at positions where the cooling water is discharged, respectively, to circulate the cooling water.

The inflowing cooling water is not circulated on a closed loop but is circulated in connection with the outside so that the cooling water after heat exchange is replaced with cooling water containing a new heat source. For this purpose, a cooling water supply source, a cooling water supply pump, and a cooling water storage tank, which are not shown, are included. If necessary, a heat exchanger can also be included.

Specifically, the multiple connection pipe 170 flows in through the one-side branched socket 173 of the upper plate cooling flow path connected to the cooling water inlet 170a, circulates, is discharged to the supply pipe 171 of the multiple connection pipe through the other-side branched socket 173, and is supplied to the main cooling flow path 160 through the branched socket 173 positioned at the lower portion. And a discharge pipe 172 for discharging the cooling water flowing into the lower horizontal pipe of the main cooling flow path to the outside after cooling the exhaust gas around the inner collecting tower while passing through the horizontal pipe. Then, the cooling water is discharged to a cooling water tank or the outside, not shown, through a cooling water discharge port 170b located at the end of the discharge pipe.

In addition, when the two or more main cooling flow paths 160 are provided, the multiple connection pipe 170 may be configured such that the cooling water chamber 174 having a space portion therein is provided at the lower portion and the upper portion where the supply pipe and the discharge pipe are provided, not to be connected to the horizontal pipes of the two or more main cooling flow paths, and the cooling water collected in the internal space portion of the cooling water chamber 174 located at the lower portion is simultaneously supplied to the two or more supply pipes located at the lower portion by one supply pipe or the cooling water after heat exchange discharged to the internal space portion of the cooling water chamber 174 located at the upper portion is discharged through one discharge pipe.

By providing the cooling water cavities 174 as described above, it is possible to simultaneously supply cooling water to the respective main cooling flow paths 160 without providing complicated pipes or branch jacks according to the number of the main cooling flow paths 160, and it is possible to simultaneously discharge cooling water heat-exchanged during the passage through the internal collection tower through the discharge ports of the main cooling flow paths 160.

As shown in the figure, the exhaust gas flowing into the apparatus for collecting reaction-byproducts to which the present invention is applied can uniformly collect high-density reaction-byproducts in the lower outer portion of the upper plate, the inner wall plate, the inner collection tower, and the main cooling flow path formed in the wall surface of the casing.

The present invention is not limited to the specific preferred embodiments described above, and various modifications can be made by those having ordinary skill in the art to which the present invention pertains without departing from the scope of the present invention as claimed in the claims, and the modifications are included in the scope described in the claims.

Claims

1. A semiconductor engineering reaction byproduct collecting device provided with a cooling flow path is characterized in that: the semiconductor engineering reaction byproduct collecting device which is arranged on a pipeline between a process chamber and a vacuum pump and is used for collecting reaction byproducts in exhaust gas exhausted from the process chamber comprises:

a housing (110) which accommodates the exhaust gas flowing in through an upper plate formed with a gas inlet and an upper plate cooling flow path and then discharges the exhaust gas through a lower plate formed with a gas outlet, wherein an inner wall plate (111) for forming a vortex of the exhaust gas flowing in through the gas inlet of the upper plate and having its temperature adjusted by a heater (140) and collecting reaction by-products is formed on the inner wall;

an inner collecting tower (150) installed inside the housing at an upper portion spaced apart from the lower plate, assembled by a plurality of vertical plates forming an installation space of the main cooling flow path, an upper side plate covering upper sides of the vertical plates to induce a flow of the exhaust gas and form a vortex, and a vortex plate embedded in the vertical plates, for condensing the exhaust gas and collecting reaction byproducts;

a main cooling flow path (160) which penetrates the internal collection tower (150) and cools the exhaust gas by cooling water; and the number of the first and second groups,

and a multiple connection pipe (170) for circulating and discharging cooling water to the upper plate cooling flow path and the main cooling flow path in turn by using a supply pipe and a discharge pipe installed outside the housing.

2. The semiconductor engineering reaction by-product collection device equipped with a cooling flow path according to claim 1, characterized in that:

inner wall plates (111) are formed on each surface of the inner wall of the housing (110) at a predetermined interval across the upper and lower regions, the inner wall plates (111) formed on the adjacent surfaces are attached to each other in a staggered manner, and the inner wall plates are attached to each side surface in a staggered manner in the upper and lower directions by a length smaller than the horizontal length of the corresponding surface.

3. The semiconductor engineering reaction by-product collection device equipped with a cooling flow path according to claim 1, characterized in that:

the upper plate cooling flow path (122) formed on the upper plate allows cooling water supplied from the outside to flow in through a branched socket (173) on one side connected to a cooling water inlet (170a) of the multiple connection pipe (170) and circulate, and then to be discharged through a branched socket (173) on the other side to the multiple connection pipe and circulate to the main cooling flow path (160).

4. The semiconductor engineering reaction by-product collection device equipped with a cooling flow path according to claim 1, characterized in that:

the above-mentioned inside collecting tower includes: a plurality of vertical plates (151) arranged at a predetermined interval; an upper vertical plate (152) for covering the upper side of each vertical plate; a base plate (153) for supporting a lower portion of each vertical plate; and a vortex plate (154) crosswise embedded in the horizontal direction to each vertical plate;

air holes (1511, 1521, 1531, 1541) for moving the exhaust gas are formed on the surfaces of the vertical plate (151), the upper side plate (152), the base plate (153) and the vortex plate (154),

more than one duct channel (1514) for the main cooling flow path is vertically formed in the vertical plate so that the upper and lower positions thereof can be easily adjusted when the main cooling flow path in the shape of a U-shaped duct is installed.

5. The semiconductor engineering reaction by-product collection device equipped with a cooling flow path according to claim 4, wherein:

the stagnation time of the exhaust gas flow is extended while forming a vortex by forming horizontal plates protruded to the outside on both side vertical plates of the inner collecting tower (150).

6. The semiconductor engineering reaction by-product collection device equipped with a cooling flow path according to claim 4, wherein:

a plurality of air holes (1521) with different sizes are formed on the surface of the upper side panel (152) in an array mode, and the air holes formed at the two ends of the long side are larger than other air holes formed at other positions, so that the discharge amount of the exhaust gas flowing from the upper portion is larger at the outer side than at the central portion.

7. The semiconductor engineering reaction by-product collection device equipped with a cooling flow path according to claim 4, wherein:

the air holes (1511) formed on the vertical plate (151) are larger than the air holes (1541) formed on the vortex plate (154).

8. The semiconductor engineering reaction by-product collection device equipped with a cooling flow path according to claim 1, characterized in that:

the main cooling flow path (160) has a U-shaped duct shape including a horizontal pipe (1601) formed vertically and a bent pipe (1602) connecting the horizontal pipe at one side.

9. The semiconductor engineering reaction by-product collection device equipped with a cooling flow path according to claim 1, characterized in that:

the main cooling flow path (160) is composed of two or more.

10. The semiconductor engineering reaction by-product collection device equipped with a cooling flow path according to claim 1, characterized in that:

the multi-connection pipe 170 is circulated by flowing in through a branched socket 173 on one side of an upper plate cooling flow path connected to a cooling water inlet 170a, and then discharged to a supply pipe 171 of the multi-connection pipe through a branched socket 173 on the other side, and then supplied to a main cooling flow path 160 through a branched socket 173 located on a lower portion, and cooling water flowing into a lower horizontal pipe of the main cooling flow path is discharged to an external discharge pipe 172 after cooling exhaust gas around an internal collection tower while flowing through the horizontal pipe, and then discharged through a cooling water discharge outlet 170b located at a distal end of the discharge pipe.

11. The semiconductor engineering reaction by-product collection device equipped with a cooling flow path according to claim 10, wherein:

when the multiple connection pipe (170) is provided with more than two main cooling flow paths (160), the lower part and the upper part of the supply pipe and the discharge pipe are respectively provided with a cooling water cavity (174) internally composed of space parts, so that the cooling water gathered in the internal space part of the cooling water cavity (174) positioned at the lower part is simultaneously supplied to more than two supply pipes positioned at the lower part by one supply pipe or the cooling water after heat exchange discharged in the internal space part of the cooling water cavity (174) positioned at the upper part is discharged by one discharge pipe.

12. The semiconductor engineering reaction by-product collection device equipped with a cooling flow path according to claim 1, characterized in that:

the heater (140) further comprises: and a heat distribution plate (1411) installed at a lower portion of the heater with a certain interval from the lower portion of the heater through a coupling portion, and supplying a part of the exhaust gas to an upper portion side of an inner collection tower located at the lower portion and supplying the remaining exhaust gas to an inner wall direction of a housing located at a side by forming a plurality of gas holes (1411) at an outer side.