CN112624786B - Method for manufacturing composite substrate - Google Patents
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- CN112624786B CN112624786B CN201910906376.1A CN201910906376A CN112624786B CN 112624786 B CN112624786 B CN 112624786B CN 201910906376 A CN201910906376 A CN 201910906376A CN 112624786 B CN112624786 B CN 112624786B
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/54—Oxidising the surface before joining
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Abstract
Description
技术领域technical field
本发明涉及一种复合式基板的制造方法,尤指铜箔与陶瓷基板以共晶反应键合的复合式基板的制造方法。The invention relates to a method for manufacturing a composite substrate, in particular to a method for manufacturing a composite substrate in which copper foil and a ceramic substrate are bonded by eutectic reaction.
背景技术Background technique
铜箔与陶瓷形成复合式基板的方式为直接铜接合技术(简称DCB,Direct CopperBonding或简称DBC,Direct Bonding Copper),早期为使用干式制程,系将铜箔至于真空炉中,使铜箔在氧元素气氛下表面生成氧化铜,接着将含有氧化铜层的铜箔贴合于具氧化物表层的陶瓷基板表面,在温度下于真空炉中共晶烧结,铜箔将直接键合于陶瓷基板表面,此种作法铜箔两面都会形成氧化铜,不利铜箔单面与陶瓷基板共晶键合。再者,亦有相关业者利用碱性药水让铜箔表面长出由氧化铜与氧化亚铜所组成的黑色绒毛所构成,让铜箔能单面形成氧化铜层,但此种作法有下列缺失:The method of forming a composite substrate between copper foil and ceramics is direct copper bonding technology (DCB, Direct Copper Bonding or DBC, Direct Bonding Copper). Under the oxygen atmosphere, copper oxide is formed on the surface, and then the copper foil containing the copper oxide layer is attached to the surface of the ceramic substrate with the oxide surface layer. Eutectic sintering in a vacuum furnace at high temperature, the copper foil will be directly bonded to the surface of the ceramic substrate. In this way, copper oxide will be formed on both sides of the copper foil, which is not conducive to the eutectic bonding of the copper foil to the ceramic substrate on one side. In addition, there are also related companies using alkaline potions to make the surface of the copper foil grow black fluff composed of copper oxide and cuprous oxide, so that the copper foil can form a copper oxide layer on one side, but this method has the following shortcomings. :
1、由于氧化铜膜层是直接由铜箔表面长成,因此铜箔表面的粗糙度不足,必须在进行氧化铜膜层制作前,需先将铜箔表面粗糙化,增加共晶反应时的结合力,导致制程复杂。1. Since the copper oxide film is grown directly from the surface of the copper foil, the roughness of the surface of the copper foil is insufficient. Before making the copper oxide film, the surface of the copper foil must be roughened to increase the eutectic reaction. The bonding force makes the process complicated.
2、氧化铜膜层的黑色绒毛长成的速度慢,容易断裂脱落,除了制成时间增长外,共晶反应时的结合力也会大幅下降,且铜箔置于空气中,氧化铜膜层会持续增生,导致其厚度不易控制。2. The black fluff of the copper oxide film grows slowly and is easy to break and fall off. In addition to the increase in the production time, the bonding force during the eutectic reaction will also be greatly reduced, and the copper foil will be placed in the air. Continued proliferation, making its thickness difficult to control.
3、碱性药水使用后所产生的废水,较不符合环保,且废水的处理成本较高。3. The wastewater generated after the use of alkaline potion is less environmentally friendly, and the cost of wastewater treatment is high.
4、氧化铜膜层内会形成许多细小的空隙,在共晶烧结时会因共晶液相的流动能力较差,使空隙中的气体无法排出,造成复合式基板制成后,铜箔与陶瓷的间夹杂许多气隙,除了会使热传导能力下降外,也会使结合强度降低。4. Many small voids will be formed in the copper oxide film layer. During eutectic sintering, the flowability of the eutectic liquid phase will be poor, so that the gas in the voids cannot be discharged, resulting in the formation of the composite substrate. The inclusion of many air gaps between the ceramics will not only reduce the thermal conductivity, but also reduce the bonding strength.
因此,要如何解决上述现有技术存在的问题与缺失,即为相关业者所亟欲研发的课题所在。Therefore, how to solve the above-mentioned problems and deficiencies in the prior art is an urgent research and development issue for the relevant industry.
发明内容SUMMARY OF THE INVENTION
本发明的主要目的在于,利用pH小于3的药水对铜箔表面进行处理,让铜箔表面粗糙化以及生成碎石状微观结构的机金属复合物的氧化铜膜层,提高铜箔与陶瓷基板的结合力,且氧化铜膜层厚度容易控制,并可降低成本增加生产速度。The main purpose of the present invention is to treat the surface of the copper foil with a potion with pH less than 3, so that the surface of the copper foil is roughened and a copper oxide film layer of an organic metal composite with a crushed stone-like microstructure is formed, and the copper foil and the ceramic substrate are improved. The bonding force is good, and the thickness of the copper oxide film is easy to control, and the cost can be reduced and the production speed can be increased.
本发明的次要目的在于,利用铜箔表面所设置的遮蔽区,让形成于铜箔表面的氧化铜膜层内形成有逃气空间,以使铜箔单面与陶瓷基板共晶键合时,增加共晶液相的流动能力,降低复合式基板制成时,铜箔与陶瓷之间所夹杂的气隙数量,大幅提升复合式基板的热传导能力以及结合强度。The secondary purpose of the present invention is to use the shielding area set on the surface of the copper foil to form an escape space in the copper oxide film layer formed on the surface of the copper foil, so that when the copper foil is eutectic bonded to the ceramic substrate on one side , increase the flow capacity of the eutectic liquid phase, reduce the number of air gaps between the copper foil and the ceramic when the composite substrate is made, and greatly improve the thermal conductivity and bonding strength of the composite substrate.
为达上述目的,本发明的复合式基板的制造方法于实施时,使先将铜箔的表面进行清洗,去除表面油污或污垢;再以pH小于3的药水对铜箔表面进行处理,让铜箔表面受药水蚀刻粗糙化以及于铜箔表面形成有碎石状微观结构的有机金属复合物的氧化铜膜层;续将铜箔的氧化铜膜层与陶瓷基板表面贴合,并将铜箔加热至共晶温度,使铜箔与其表面的氧化铜膜层产生共晶反应,进而键合铜箔与陶瓷基板。In order to achieve the above-mentioned purpose, when the manufacturing method of the composite substrate of the present invention is implemented, the surface of the copper foil is firstly cleaned to remove the oil or dirt on the surface; The surface of the foil is etched and roughened by the potion, and the copper oxide film layer of the organometallic composite with the crushed stone-like microstructure is formed on the surface of the copper foil; Heating to the eutectic temperature makes the copper foil and the copper oxide film layer on the surface produce eutectic reaction, and then bond the copper foil and the ceramic substrate.
前述的复合式基板的制造方法,其中该药水至少包含有含量介于2%~20%重量比的过氧化氢、2%~20%重量比的硫酸以及0.5%~5%重量比的含氮杂环化合物的促进剂,促进剂是用以增强氧化铜膜层结合力。The manufacturing method of the aforementioned composite substrate, wherein the medicinal solution at least contains hydrogen peroxide with a content of 2% to 20% by weight, sulfuric acid of 2% to 20% by weight, and nitrogen content of 0.5% to 5% by weight Heterocyclic compound accelerator, the accelerator is used to enhance the bonding force of the copper oxide film.
前述的复合式基板制造方法,其中该促进剂含有烷基、苯基、氨基或羟基。In the aforementioned method for manufacturing a composite substrate, the accelerator contains an alkyl group, a phenyl group, an amino group or a hydroxyl group.
前述的复合式基板的制造方法,其中该陶瓷基板为氮化铝陶瓷基板、氧化铝陶瓷基板或氮化硅陶瓷基板。In the method for manufacturing the aforementioned composite substrate, the ceramic substrate is an aluminum nitride ceramic substrate, an alumina ceramic substrate or a silicon nitride ceramic substrate.
前述的复合式基板的制造方法,其中该铜箔的表面进行清洗完毕后,系先于铜箔表面设置有遮蔽区,再以PH小于3的药水对铜箔表面进行处理,以使氧化铜膜层不会形成于遮蔽区,使氧化铜膜层内形成有逃气空间。The manufacturing method of the aforementioned composite substrate, wherein after the surface of the copper foil is cleaned, a shielding area is arranged on the surface of the copper foil, and then the surface of the copper foil is treated with a liquid with a pH of less than 3 to make the copper oxide film. The layer will not be formed in the shielding area, so that an escape space is formed in the copper oxide film layer.
前述的复合式基板的制造方法,其中该铜箔表面的遮蔽区为复数设置。In the manufacturing method of the aforementioned composite substrate, the shielding regions on the surface of the copper foil are provided in plural numbers.
附图说明Description of drawings
图1为本发明第一实施例的流程图;Fig. 1 is the flow chart of the first embodiment of the present invention;
图2为本发明第一实施例的流程示意图;FIG. 2 is a schematic flowchart of the first embodiment of the present invention;
图3为本发明第二实施例铜箔表面设置遮蔽区的示意图;3 is a schematic diagram of setting a shielding area on the surface of the copper foil according to the second embodiment of the present invention;
图4为本发明第二实施例铜箔表面形成氧化铜膜层的示意图;4 is a schematic diagram of forming a copper oxide film on the surface of the copper foil according to the second embodiment of the present invention;
图5为本发明第二实施例铜箔表面形成氧化铜膜层的剖面图;5 is a cross-sectional view of a copper oxide film formed on the surface of the copper foil according to the second embodiment of the present invention;
图6为本发明第二实施例铜箔表面形成氧化铜膜层的局部剖面图;6 is a partial cross-sectional view of a copper oxide film formed on the surface of the copper foil according to the second embodiment of the present invention;
图7为本发明第二实施例铜箔与陶瓷基板共晶键合的示意图。FIG. 7 is a schematic diagram of the eutectic bonding of the copper foil and the ceramic substrate according to the second embodiment of the present invention.
符号说明:Symbol Description:
10、复合式基板10. Composite substrate
1、铜箔1. Copper foil
2、陶瓷基板2. Ceramic substrate
3、氧化铜膜层3. Copper oxide film
4、遮蔽区4. Sheltered area
5、逃气空间5. Air escape space
具体实施方式Detailed ways
请参阅图1与图2所示,由图中可清楚看出,本发明第一实施例的复合式基板10制造方法于实施时,是依照下列步骤进行:Please refer to FIG. 1 and FIG. 2 , it can be clearly seen from the figures that the manufacturing method of the
(A)准备铜箔1与陶瓷基板2,陶瓷基板1可为氮化铝陶瓷基板、氧化铝陶瓷基板或氮化硅陶瓷基板。(A) Prepare the copper foil 1 and the ceramic substrate 2, and the ceramic substrate 1 may be an aluminum nitride ceramic substrate, an alumina ceramic substrate or a silicon nitride ceramic substrate.
(B)将铜箔1进行清洗,以去除铜箔1表面的脏污或污垢。(B) The copper foil 1 is washed to remove contamination or dirt on the surface of the copper foil 1 .
(C)以pH小于3的药水对铜箔表面进行处理,该药水包含有含量介于2%~20%重量比的过氧化氢、2%~20%重量比的硫酸以及0.5%~5%重量比的含氮杂环化合物的促进剂,促进剂含有烷基、苯基、氨基或羟基;而药水与铜箔1表面会同时产生两个反应,分别为蚀刻反应以及膜成型反应,蚀刻反应会于铜箔1表面产生蚀刻(etching),使铜箔1表面粗糙化,膜成型反应会于铜箔1表面形成有碎石状微观结构且结构紧密的有机金属复合物的氧化铜膜层3,藉由铜箔1表面粗糙化,让氧化铜膜层3与铜箔1表面产生良好的结合力,且藉由促进剂的作用,增强氧化铜膜层3结合力。(C) Treat the surface of the copper foil with a liquid medicine with a pH of less than 3, the liquid medicine contains hydrogen peroxide in an amount ranging from 2% to 20% by weight, sulfuric acid in an amount of 2% to 20% by weight, and 0.5% to 5% by weight. Accelerator of nitrogen-containing heterocyclic compound in weight ratio, the accelerator contains alkyl, phenyl, amino or hydroxyl; and the potion and the surface of copper foil 1 will produce two reactions at the same time, namely etching reaction and film forming reaction, etching reaction Etching will be generated on the surface of the copper foil 1 to roughen the surface of the copper foil 1, and the film forming reaction will form a copper
(D)将铜箔1的氧化铜膜层3与陶瓷基板2表面贴合,并将铜箔1加热至共晶温度,使铜箔1与其表面的氧化铜膜3层产生共晶反应,进而键合铜箔1与陶瓷基板2制成复合式基板10。(D) The copper
请参阅图3至图7所示,本发明的第二实施例与前述的第一实施例的差异在于,该铜箔1表面进行清洗完毕后,是先于铜箔1表面设置出复数个遮蔽区4,再以pH小于3的药水对铜箔1表面进行处理,于药水处理完毕后去除铜箔1表面的遮蔽区4,以使氧化铜膜层3于铜箔1未受遮蔽区4遮蔽的表面形成氧化铜膜层3,而让氧化铜膜层3内形成有逃气空间5,藉此,当将铜箔1的氧化铜膜层3与陶瓷基板2表面贴合,并将铜箔1加热至共晶温度时,增加氧化铜膜层3共晶液相的流动能力,降低气隙的产生,让复合式基板10于制程时,降低复合式基板制成时,铜箔1与陶瓷基板2之间所夹杂的气隙数量,大幅提升复合式基板的热传导能力以及结合强度。再者,在本实施例中遮蔽区4的设置为多数个圆形设置,但不因此局限本发明,遮蔽区4的设置可依据氧化铜膜层3厚度、铜箔面积…等因素,调整遮蔽区4的形状与数量。Please refer to FIG. 3 to FIG. 7 , the difference between the second embodiment of the present invention and the aforementioned first embodiment is that after the surface of the copper foil 1 is cleaned, a plurality of shields are set before the surface of the copper foil 1 In
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| CN109608221A (en) * | 2018-11-30 | 2019-04-12 | 合肥市闵葵电力工程有限公司 | A kind of preparation method of aluminium nitride ceramic copper-clad substrate |
| CN110029336A (en) * | 2019-05-24 | 2019-07-19 | 电子科技大学 | A kind of multilayer printed circuit board manufacture copper surface treatment liquid and processing method |
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