CN112764243A - Hyperbolic broken line differential electrode structure for modulator - Google Patents
Hyperbolic broken line differential electrode structure for modulator Download PDFInfo
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- CN112764243A CN112764243A CN202110115995.6A CN202110115995A CN112764243A CN 112764243 A CN112764243 A CN 112764243A CN 202110115995 A CN202110115995 A CN 202110115995A CN 112764243 A CN112764243 A CN 112764243A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0327—Operation of the cell; Circuit arrangements
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- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
本发明公开了一种调制器用双曲折线差分电极结构，包括两条互相平行设置的信号线，两条信号线分别为第一曲折微带传输线和第二曲折微带传输线；第一曲折微带传输线和第二曲折微带传输线长度相等。使其在确保高速调制信号具有良好传输性能的条件下还可以降低微波信号的相速度，从而与光波相速进行匹配，此外差分信号的采用可以有效降低系统的驱动电压，保证信号的完整性，大大降低系统整体的功耗。
The invention discloses a double zigzag line differential electrode structure for a modulator, which comprises two signal lines arranged in parallel with each other, and the two signal lines are respectively a first zigzag microstrip transmission line and a second zigzag microstrip transmission line; the first zigzag microstrip The transmission line and the second meandering microstrip transmission line are of equal length. It can also reduce the phase velocity of the microwave signal under the condition that the high-speed modulated signal has good transmission performance, so as to match the phase velocity of the light wave. In addition, the use of differential signals can effectively reduce the driving voltage of the system and ensure the integrity of the signal. Greatly reduce the overall power consumption of the system.
Description
Technical Field
The invention relates to the field of microwave electronic devices, in particular to a hyperbolic broken line differential electrode structure for a modulator.
Background
In the future, with the increasing popularity of fiber access networks and the increasing spread of 5G services, data traffic growth will continue to evolve, posing a very severe challenge to current communication networks.
With the advent of semiconductor lasers and the development of low-loss optical fibers in the last century, optical networks based on optical fiber communication technology have had a dramatic development, bearing ninety percent of the data traffic. In the process of continuous technological advancement and rapid development of optical fiber communication networks, various new optical devices and transmission systems drive the continuous advancement and development of optical fiber communication networks. Further breakthrough in capacity requires research and compromise on various multiplexing and photonic integration. Silicon-based photonic integrated platforms have received great attention in a number of integrated platforms, primarily due to their powerful potential for monolithically integrating electrical and photonic chips while also being able to take advantage of the current state of the art low cost, large scale CMOS integrated circuit fabrication processes. The silicon photonics technology includes key components: passive waveguide, coupler, branching and combining device, polarization multiplexing and demultiplexing device, wavelength division multiplexing and demultiplexing device, light source, amplifier, attenuator, modulator, detector and the like.
In optical communication systems, optical modulators play an indispensable role in modulating a specific optical signal onto an optical carrier. The electro-optical modulator is used as an important device for converting an electric signal into an optical signal, and besides the need of designing an optical waveguide structure, the electro-optical modulator is used as a microwave electrode structure for transmitting a high-frequency microwave signal to an electro-optical interaction region, and has an important influence on the modulation performance of the electro-optical modulator, so that in order to ensure good electro-optical interaction of the electro-optical modulator, the microwave electrode needs to meet the requirements of impedance matching at a microwave input end, low microwave transmission loss, the same microwave phase velocity and light wave phase velocity and the like.
As shown in fig. 1, a schematic diagram of a conventional GS (ground-signal) type electrode structure includes a signal line 4 and a ground line 3. The microwave electric field on the cross section of the GS-type transmission line structure is distributed between the signal line and the ground line, but the portion of the electric field radiated into the substrate is large, resulting in high loss. In addition, in order to satisfy the condition of matching the phase speed of the microwave and the optical wave signal, the signal line width is usually increased, however, the transmission frequency is often reduced by this method, and the high-speed modulation signal cannot be transmitted, so that the high-speed modulation is realized.
Disclosure of Invention
The purpose of the invention is as follows: aiming at the prior art, the hyperbolic curve line differential electrode for the modulator is provided, so that the performance of a GS-type electrode structure is improved, the microwave loss is reduced, and the problem of contradiction between high-speed transmission and phase speed matching is solved.
The technical scheme is as follows: a hyperbolic differential electrode structure for a modulator comprises two signal lines which are arranged in parallel, wherein the two signal lines are a first zigzag microstrip transmission line and a second zigzag microstrip transmission line respectively; the lengths of the first zigzag microstrip transmission line and the second zigzag microstrip transmission line are equal;
the first zigzag microstrip transmission line is a microstrip zigzag line with a periodic structure, and comprises first microstrip transmission line units which are connected in sequence;
the second zigzag microstrip transmission line is a microstrip zigzag line with a periodic structure, and comprises second microstrip transmission line units connected in sequence.
Furthermore, the first microstrip transmission line unit comprises a first vertical section transmission line, a second vertical section transmission line, a first horizontal section transmission line, a second horizontal section transmission line and a third horizontal section transmission line, the first vertical section transmission line and the second vertical section transmission line are parallel to each other and have the same length, the third horizontal section transmission line is parallel to the first horizontal section transmission line and the second horizontal section transmission line respectively, one end of the first horizontal section transmission line is vertically connected with one end of the first vertical section transmission line, the other end of the first vertical section transmission line is connected with one end of the second vertical section transmission line through the second horizontal section transmission line, and one end of the second vertical section transmission line is vertically connected with one end of the third horizontal section transmission line;
the second microstrip transmission line unit comprises a third vertical section transmission line, a fourth horizontal section transmission line, a fifth horizontal section transmission line and a sixth horizontal section transmission line, the third vertical section transmission line and the fourth vertical section transmission line are parallel to each other and have the same length, the sixth horizontal section transmission line is parallel to the fourth horizontal section transmission line and the fifth horizontal section transmission line respectively, one end of the fourth horizontal section transmission line is vertically connected with one end of the third vertical section transmission line, the other end of the third vertical section transmission line is connected with one end of the fourth vertical section transmission line through the fifth horizontal section transmission line, and one end of the fourth vertical section transmission line is vertically connected with one end of the sixth horizontal section transmission line;
the lengths of the first horizontal transmission line and the third horizontal transmission line are equal, the sum of the lengths is equal to the length of the fifth horizontal transmission line, the lengths of the fourth horizontal transmission line and the sixth horizontal transmission line are equal, the sum of the lengths is equal to the length of the second horizontal transmission line, and the length of the second horizontal transmission line is greater than the length of the fifth horizontal transmission line.
Furthermore, the parameters of the microstrip transmission lines adopted by the first zigzag microstrip transmission line and the second zigzag microstrip transmission line are the same, and the parameters of the microstrip transmission lines refer to the material, the line width, the thickness and the inner diameter of the microstrip transmission lines.
Furthermore, the phase velocity of the microwave signal is changed by adjusting the parameters of the line width, the thickness, the inner diameter and the space size of the two signal lines, so that the phase velocity of the microwave signal is matched with the phase velocity of the optical wave in the optical waveguide; the distance refers to the distance between the first zigzag microstrip transmission line and the second zigzag microstrip transmission line.
Has the advantages that: the electromagnetic wave of the electrode structure is mainly transmitted between two signal lines in a concentrated mode, namely the electromagnetic wave is mainly transmitted in vacuum, and therefore loss can be reduced. The hyperbolic curve line can increase the microwave phase velocity by increasing the line width, and simultaneously ensures that the transmission frequency is still in a higher frequency band by properly reducing the size parameters such as the inner diameter, the interval and the like, thereby solving the problem that the contradiction of high-frequency band transmission and phase velocity matching cannot be simultaneously met.
The hyperbolic differential electrode structure ensures that the modulation rate is not limited while phase velocity is matched, reduces the power consumption of a system and ensures the integrity of signals. The invention can ensure the integrity of signals, reduce the error rate and meet the requirement of high-speed transmission.
In addition, the differential signal transmission mode is different from the traditional method of one signal wire and one ground wire, signals are transmitted on two wires of the structure, the amplitudes of the two signals are the same, the phases of the two signals are opposite, and the signals obtained by a receiving end are the difference value of the levels of the two signals, so that half of driving voltage can be reduced, and the power consumption of a system is effectively reduced.
Drawings
FIG. 1 is a schematic diagram of a conventional GS-type electrode structure;
FIG. 2 is a hyperbolic differential electrode for a modulator of the present invention;
FIG. 3 is a graph of transmission characteristic simulation results for the electrode structure of the present invention;
FIG. 4 is a graph of the dispersion characteristics simulation results for the electrode structure of the present invention;
FIG. 5 is a curve showing the variation of the electric field intensity with height at the central axis on the equal transmission distance cross section of the hyperbolic differential electrode structure of the present invention;
FIG. 6 is a comparison graph of the variation curve of the electric field intensity with the height at the central axis on the equal transmission distance cross section of the conventional GS-type electrode structure;
fig. 7 is a first microstrip transmission line element and a second microstrip transmission line element.
Detailed Description
The invention is further explained below with reference to the drawings.
As shown in fig. 2, a double-meander line differential electrode for a modulator adopts a double-meander microstrip transmission line to replace a conventional electrode structure, the double-meander microstrip transmission line includes a first meandering microstrip transmission line 1 and a second meandering microstrip transmission line 2 arranged in parallel, and the lengths of the first meandering microstrip transmission line 1 and the second meandering microstrip transmission line 2 are equal. The parameters of the microstrip transmission lines adopted by the first zigzag microstrip transmission line 1 and the second zigzag microstrip transmission line 2 are the same, and the parameters of the microstrip transmission lines refer to the line width, the thickness and the inner diameter of the microstrip transmission lines.
As shown in fig. 2, the first meandering microstrip transmission line 1 structure is a periodic microstrip meander line, the first meandering microstrip transmission line 1 includes a first microstrip transmission line unit connected in sequence, the first microstrip transmission line unit includes a first vertical section transmission line 102, a second vertical section transmission line 104, a first horizontal section transmission line 101, the first horizontal transmission line 102 and the second vertical transmission line 104 are parallel to each other and have the same length, the third horizontal transmission line 105 is parallel to the first horizontal transmission line 101 and the second horizontal transmission line 103, one end of the first horizontal transmission line 101 is vertically connected with one end of the first vertical transmission line 102, the other end of the first vertical transmission line 102 is connected with one end of the second vertical transmission line 104 through the second horizontal transmission line 103, and one end of the second vertical transmission line 104 is vertically connected with one end of the third horizontal transmission line 105.
The second meandering microstrip transmission line 2 includes a second microstrip transmission line unit connected in sequence, the second microstrip transmission line unit includes a third vertical transmission line 202, a fourth vertical transmission line 204, a fourth horizontal transmission line 201, a fifth horizontal transmission line 203 and a sixth horizontal transmission line 205, the third vertical transmission line 202 and the fourth vertical transmission line 204 are parallel to each other and have the same length, the sixth horizontal transmission line 205 is parallel to the fourth horizontal transmission line 201 and the fifth horizontal transmission line 203, respectively, one end of the fourth horizontal transmission line 201 is connected to one end of the third vertical transmission line 202 vertically, the other end of the third vertical transmission line 202 is connected to one end of the fourth vertical transmission line 204 through the fifth horizontal transmission line 203, and one end of the fourth vertical transmission line 204 is connected to one end of the sixth horizontal transmission line 205 vertically. The first horizontal transmission line 101 and the third horizontal transmission line 105 are equal in length, and the sum of the lengths is equal to the length of the fifth horizontal transmission line 203, the fourth horizontal transmission line 201 and the sixth horizontal transmission line 205 are equal in length, and the sum of the lengths is equal to the length of the second horizontal transmission line 103, and the length of the second horizontal transmission line 103 is greater than the length of the fifth horizontal transmission line 203.
The phase velocity matching of the microwave and the optical wave is realized by adjusting the size parameters such as the line width, the thickness, the distance, the inner diameter and the like of the first zigzag microstrip transmission line and the first zigzag microstrip transmission line. The phase velocity of the microwave is increased by increasing the structural parameters such as dimensional parameters such as line width, thickness, spacing and inner diameter, so that the phase velocity of the microwave is close to the phase velocity of the light wave near the transmission frequency to realize phase velocity matching.
The method of the present invention is simulated and verified by the following specific experiments, wherein the specific parameters adopted in the experiments are as follows: the line width w is 12 μm, the pitch s is 20 μm, the inner diameter d is 40 μm, and the thickness t is 1.2 μm. CST software is used for carrying out performance analysis on the electrode structure to obtain the transmission characteristic and the dispersion characteristic of the electrode structure, the traditional GS type electrode structure and the hyperbolic broken line differential electrode structure provided by the invention are compared and analyzed with the change of the electric field intensity along with the height at the central axis on the equal transmission distance section, and the simulation results are shown in figures 3, 4, 5 and 6.
As can be seen from FIG. 3, the hyperbolic differential electrode structure of the invention has good transmission characteristics and modulation bandwidth greater than 100 GHz.
As can be seen from fig. 4, the microwave phase velocity of the hyperbolic differential electrode structure of the present invention can be matched with the light wave phase velocity in the optical waveguide, thereby realizing effective modulation.
As can be seen from the comparison of fig. 5 and 6, the electric field portion radiated into the substrate by the conventional GS-type electrode structure is larger than that of the hyperbolic broken line differential electrode structure of the present invention, and the maximum field strength of the electrode structure of the present invention is larger than that of the conventional GS-type electrode.
As can be seen from fig. 3, 4 and 5, the hyperbolic differential electrode structure of the present invention has the advantages of low loss, low power consumption, and compatible phase-rate matching and high-speed modulation compared with the conventional GS-type electrode structure under the conditions of large bandwidth and good transmission characteristics.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (4)
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110115995.6A CN112764243A (en) | 2021-01-28 | 2021-01-28 | Hyperbolic broken line differential electrode structure for modulator |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110115995.6A CN112764243A (en) | 2021-01-28 | 2021-01-28 | Hyperbolic broken line differential electrode structure for modulator |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4468086A (en) * | 1981-11-05 | 1984-08-28 | At&T Bell Laboratories | Traveling wave, velocity mismatched gate |
| CN1313961A (en) * | 1999-05-11 | 2001-09-19 | Jds尤尼费斯公司 | External optical modulation using non-co-linear compensation networks |
| JP2009205154A (en) * | 2008-02-01 | 2009-09-10 | Anritsu Corp | Light modulating device |
| JP2015129906A (en) * | 2013-12-03 | 2015-07-16 | 日本電信電話株式会社 | Semiconductor mach-zehnder modulator |
| CN108461367A (en) * | 2018-03-28 | 2018-08-28 | 电子科技大学 | A kind of microstrip line slow-wave structure |
-
2021
- 2021-01-28 CN CN202110115995.6A patent/CN112764243A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4468086A (en) * | 1981-11-05 | 1984-08-28 | At&T Bell Laboratories | Traveling wave, velocity mismatched gate |
| CN1313961A (en) * | 1999-05-11 | 2001-09-19 | Jds尤尼费斯公司 | External optical modulation using non-co-linear compensation networks |
| JP2009205154A (en) * | 2008-02-01 | 2009-09-10 | Anritsu Corp | Light modulating device |
| JP2015129906A (en) * | 2013-12-03 | 2015-07-16 | 日本電信電話株式会社 | Semiconductor mach-zehnder modulator |
| CN108461367A (en) * | 2018-03-28 | 2018-08-28 | 电子科技大学 | A kind of microstrip line slow-wave structure |
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Application publication date: 20210507 |