CN112779505B - Laser steady-state evaporation coating system and method for high-melting-point material in fusion device - Google Patents
Laser steady-state evaporation coating system and method for high-melting-point material in fusion device Download PDFInfo
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 229910052805 deuterium Inorganic materials 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 239000000155 melt Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
本发明公开了一种聚变装置中高熔点材料的激光稳态蒸发镀膜系统及方法,该系统包括激光器、激光入射窗口系统、可伸缩坩埚系统以及气体成分监测系统。激光器产生的激光束通过激光入射窗口系统,照射到坩埚内的高熔点材料表面,通过调节激光光斑的功率密度,实现高熔点材料的稳态蒸发。本发明配合聚变装置中的等离子体辅助气相沉积,从而在聚变装置第一壁表面形成均匀薄膜。激光入射窗口系统通过对两个真空观察窗之间真空腔室内气压的监测,可以避免激光束损坏真空观察窗而造成的聚变装置真空泄漏;气体成分监测系统通过监测高熔点材料下方的标记材料进入到等离子体中的含量,从而及时提醒操作人员更换高熔点材料,有效避免激光对坩埚的损伤。
The invention discloses a laser steady-state evaporation coating system and method for high melting point materials in a fusion device. The system includes a laser, a laser incident window system, a retractable crucible system and a gas component monitoring system. The laser beam generated by the laser is irradiated to the surface of the high melting point material in the crucible through the laser incident window system, and the steady state evaporation of the high melting point material is realized by adjusting the power density of the laser spot. The invention cooperates with the plasma-assisted vapor deposition in the fusion device to form a uniform thin film on the surface of the first wall of the fusion device. The laser incident window system monitors the air pressure in the vacuum chamber between the two vacuum observation windows, which can avoid the vacuum leakage of the fusion device caused by the damage of the vacuum observation window by the laser beam; to the content in the plasma, so as to remind the operator to replace the high melting point material in time, and effectively avoid the damage of the laser to the crucible.
Description
技术领域technical field
本发明涉及聚变反应堆真空室内部高熔点材料的稳态蒸发,适用于聚变装置第一壁镀膜。The invention relates to the steady-state evaporation of high-melting-point materials inside a fusion reactor vacuum chamber, and is suitable for coating the first wall of a fusion device.
背景技术Background technique
核聚变装置物理实验中,高温等离子体与壁相互作用,使得腔壁释放各种杂质进入等离子体中,造成等离子体能量的巨大损失。因此,对腔体内杂质进行有效的抑制,是实现受控热核聚变必须解决的重大问题之一。氢的再循环水平过高容易导致等离子体密度不可控制,等离子体密度很容易超过Greenwald密度极限,最终导致等离子体破裂。在H模等离子体放电中,再循环会影响边界输运垒,对H模放电造成影响,因此氢及其同位素的再循环控制对高约束等离子体的稳定运行至关重要。通过在核聚变真空腔室内壁镀膜,可有效抑制金属杂质和氧、碳杂质逸出,有效降低等离子体放电能量损失,大大改善等离子放电性能,同时降低燃料再循环。In the physical experiments of nuclear fusion devices, the high-temperature plasma interacts with the wall, causing the cavity wall to release various impurities into the plasma, resulting in a huge loss of plasma energy. Therefore, effective suppression of impurities in the cavity is one of the major problems that must be solved to achieve controlled thermonuclear fusion. Excessive hydrogen recirculation levels can easily lead to uncontrollable plasma density, which can easily exceed the Greenwald density limit and eventually lead to plasma rupture. In the H-mode plasma discharge, the recirculation will affect the boundary transport barrier, which will affect the H-mode discharge, so the recirculation control of hydrogen and its isotopes is very important for the stable operation of the highly confined plasma. By coating the inner wall of the nuclear fusion vacuum chamber, it can effectively inhibit the escape of metal impurities, oxygen and carbon impurities, effectively reduce the energy loss of plasma discharge, greatly improve the performance of plasma discharge, and reduce fuel recirculation at the same time.
聚变装置的高熔点涂层材料以硅和硼为代表。很多聚变装置已经开展了硼化壁处理和硅化壁处理工作,硼化壁处理时使用的工作气体为乙硼烷B2H6,十硼烷B10H14或有机硼化物如B(CH3)3和C2B10H12(固态);硅化时使用的工作气体为SiH4或SiD4。通过硼化壁处理,可以有效抑制装置中杂质的水平,但是由于硼化时使用的镀膜原料中本身就含有氢,这就导致第一壁上会沉积大量的氢,最终在等离子体放电时会造成较高的氢再循环和氢氘比。实验发现在硼化壁处理后,等离子体的密度及Dα线辐射水平明显较硼化前高,氢氘比升高,这都是由于使用的工作气体中含有丰富的氢造成的。在等离子体放电时,通过同位素交换,大量的氢被释放到等离子体中,并伴随着大量的氘滞留,从而导致硼化壁处理后很高的氢粒子再循环和高的燃料粒子壁滞留,氢氘比很难降至25%以内,无法为少数粒子加热提供最佳的氢氘比条件。而硅化壁处理时使用的工作气体中同样含有氢,导致在硅化壁处理时候,氢氘比明显较壁处理之前还要高,硅化壁处理后氢氘比达到70%(硅化前50%)。为了降低氢氘比,将工作气体更换为SiD4后,氢氘比能够很容易降低,但是即使多次开展硅化壁处理也很难将氢氘比降到20%以内,依然达不到离子回旋加热的需求。The high melting point coating materials for fusion devices are represented by silicon and boron. Many fusion devices have carried out boronization and silicide wall treatment. The working gas used in boride wall treatment is diborane B 2 H 6 , decaborane B 10 H 14 or organic borides such as B(CH 3 ) 3 and C 2 B 10 H 12 (solid state); the working gas used for silicidation is SiH 4 or SiD 4 . The level of impurities in the device can be effectively suppressed by boriding the wall, but since the coating raw material used in boriding itself contains hydrogen, a large amount of hydrogen will be deposited on the first wall, and eventually it will be released during plasma discharge. This results in a higher hydrogen recycle and hydrogen-to-deuterium ratio. Experiments have found that after boriding the wall, the density of the plasma and the Dα radiation level are significantly higher than those before boriding, and the ratio of hydrogen to deuterium increases, which is caused by the rich hydrogen in the working gas used. During plasma discharge, a large amount of hydrogen is released into the plasma by isotope exchange, accompanied by a large amount of deuterium retention, resulting in high hydrogen particle recirculation and high fuel particle wall retention after boride wall treatment, It is difficult to reduce the hydrogen-deuterium ratio to less than 25%, and it is impossible to provide the best hydrogen-deuterium ratio conditions for heating a small number of particles. The working gas used during the silicide wall treatment also contains hydrogen, resulting in a significantly higher hydrogen-deuterium ratio than before the silicide wall treatment. After the silicide wall treatment, the hydrogen-deuterium ratio reaches 70% (50% before silicide). In order to reduce the hydrogen-deuterium ratio, after changing the working gas to SiD 4 , the hydrogen-deuterium ratio can be easily reduced, but it is difficult to reduce the hydrogen-deuterium ratio to less than 20% even if the silicide wall treatment is carried out many times, and the ion gyration is still not achieved. Heating needs.
而且气态的硼源和硅源,大多易燃或者有毒,尾气难处理或者处理成本较高。尤其是乙硼烷一旦泄漏,少量即可致命。Moreover, most of the gaseous boron and silicon sources are flammable or toxic, and the exhaust gas is difficult to handle or the processing cost is relatively high. Especially if diborane leaks, a small amount can be fatal.
发明内容Contents of the invention
本发明所要解决的技术问题是针对现在聚变装置中第一壁涂层镀膜系统存在的上述技术问题,提供一种能实现高熔点材料稳态蒸发系统,相比现有硅化、硼化安全无毒,尾气处理简单;第一壁形成的涂层不引入氢、碳等杂质。The technical problem to be solved by the present invention is to provide a system capable of realizing steady-state evaporation of high-melting point materials, which is safe and non-toxic compared to the existing silicification and boronization. , The tail gas treatment is simple; the coating formed on the first wall does not introduce impurities such as hydrogen and carbon.
本发明的技术方案为一种聚变装置中高熔点材料的激光稳态蒸发镀膜系统,包括激光器、激光入射窗口系统、可伸缩坩埚系统以及气体成分监测系统;所述激光器包括激光发生器和激光输出端口,所述激光输出端口安装于聚变装置真空室外的顶部,所述激光发生器产生的激光束经激光输出端口射出;所述的可伸缩坩埚系统包括位于聚变装置真空室内的坩埚,所述的坩埚内部放置有高熔点材料,所述高熔点是指熔点大于1400℃,所述高熔点材料与所述的坩埚内部底面之间还放有另一标记材料;所述激光器发出的激光束通过所述的激光入射窗口系统照射到所述高熔点材料表面,通过改变所述激光器的功率和/或照射到所述高熔点材料表面光斑大小,调节光斑的功率密度,使所述高熔点材料实现稳态蒸发;所述气体成分监测系统用来监测真空室内气体成分,当气体中标记材料的成分超过某一阈值时,所述激光器立即停止工作。The technical solution of the present invention is a laser steady-state evaporation coating system for high melting point materials in a fusion device, including a laser, a laser incident window system, a retractable crucible system, and a gas composition monitoring system; the laser includes a laser generator and a laser output port , the laser output port is installed on the top of the vacuum chamber of the fusion device, and the laser beam generated by the laser generator is emitted through the laser output port; the scalable crucible system includes a crucible located in the vacuum chamber of the fusion device, and the crucible A high melting point material is placed inside, the high melting point means that the melting point is greater than 1400°C, another marking material is placed between the high melting point material and the inner bottom surface of the crucible; the laser beam emitted by the laser passes through the The laser incident window system irradiates the surface of the high melting point material, and adjusts the power density of the light spot by changing the power of the laser and/or the size of the spot on the surface of the high melting point material, so that the high melting point material can achieve a steady state Evaporation; the gas composition monitoring system is used to monitor the gas composition in the vacuum chamber, and when the composition of the marking material in the gas exceeds a certain threshold, the laser will stop working immediately.
进一步的,所述激光器为连续半导体激光器,功率根据所需要的蒸发速率而定,激光在所述高熔点材料表面产生光斑的功率密度为5.0×104~1.0×106W/cm2;所述激光输出端口按程序设定的路径行走,但是激光光斑不能超出所述高熔点材料上表面。Further, the laser is a continuous semiconductor laser, the power is determined according to the required evaporation rate, and the power density of the laser spot on the surface of the high melting point material is 5.0×10 4 to 1.0×10 6 W/cm 2 ; The laser output port walks along the path set by the program, but the laser spot cannot exceed the upper surface of the high melting point material.
进一步的,所述激光入射窗口系统包括第一激光真空观察窗和第二激光真空观察窗,一个漏率小于1×10-9Pa.m3/s的高真空电磁阀,所述第一激光真空观察窗和第二激光真空观察窗能透过所述激光器产生的激光束;所述第一激光真空观察窗和第二激光真空观察窗之间为第一真空腔室,所述第一真空腔室带有抽气管道,所述抽气管道上有量程1×10-6~1.0×105Pa的真空规管;所述高真空激光入射窗口系统位于聚变装置真空室外的顶部,并通过所述高真空电磁阀与聚变装置真空室相连;Further, the laser incident window system includes a first laser vacuum observation window and a second laser vacuum observation window, a high vacuum solenoid valve with a leak rate of less than 1×10 -9 Pa.m 3 /s, the first laser The vacuum observation window and the second laser vacuum observation window can pass through the laser beam generated by the laser; between the first laser vacuum observation window and the second laser vacuum observation window is a first vacuum chamber, and the first vacuum The chamber is equipped with an exhaust pipe, and there is a vacuum gauge with a range of 1×10 -6 ~ 1.0×10 5 Pa on the exhaust pipe; the high-vacuum laser incident window system is located on the top of the fusion device vacuum chamber, and passes through the The high vacuum solenoid valve is connected with the vacuum chamber of the fusion device;
当稳态蒸发实验开始时,第一真空腔室通过抽气管道抽气,并将气压维持在1×10-5~9×10-5Pa,当所述第一真空腔室内气压超过9×10-5Pa时,所述激光器立即停止工作,同时高真空电磁阀关闭;When the steady-state evaporation experiment starts, the first vacuum chamber is evacuated through the exhaust pipe, and the air pressure is maintained at 1×10 -5 ~ 9×10 -5 Pa. When the air pressure in the first vacuum chamber exceeds 9× 10 -5 Pa, the laser stops working immediately, and the high vacuum solenoid valve is closed at the same time;
所述激光真空观察窗与所述高真空电磁阀之间为一带有吹气接口和抽气接口的第二真空腔室;激光稳态蒸发时所述高真空电磁阀处于开启状态,激光可以通过;激光稳态蒸发结束后所述高真空电磁阀处于关闭状态;激光稳态蒸发时气体通过所述吹气接口进行吹扫,减少激光真空观察窗所受到的污染。Between the laser vacuum observation window and the high-vacuum solenoid valve is a second vacuum chamber with a blowing port and a pumping port; the high-vacuum solenoid valve is in an open state when the laser is evaporated in a steady state, and the laser can pass through ; After the laser steady-state evaporation ends, the high-vacuum solenoid valve is in a closed state; during the laser steady-state evaporation, the gas is purged through the blowing interface to reduce the pollution of the laser vacuum observation window.
进一步的,所述第一激光真空观察窗和第二激光真空观察窗能透激光区域半径大于所述蒸发坩埚的半径。Further, the radius of the laser-transmitting area of the first laser vacuum observation window and the second laser vacuum observation window is larger than the radius of the evaporation crucible.
进一步的,所述蒸发坩埚材质的耐温大于所述高熔点材料的熔点;稳态蒸发出的蒸气通过离子回旋射频波ICRF产生等离子体辅助气相沉积,沉积到聚变装置的第一壁表面;所述标记材料包含有不同于所述高熔点材料的元素;所述标记材料的熔点低于所述高熔点材料;所述高熔点材料和标记材料均为块状,且二者高度之和小于坩埚内壁高度。Further, the temperature resistance of the material of the evaporating crucible is greater than the melting point of the high melting point material; the vapor evaporated in a steady state is generated by ion cyclotron radio frequency ICRF to generate plasma-assisted vapor deposition, and deposited on the first wall surface of the fusion device; The marking material contains elements different from the high melting point material; the melting point of the marking material is lower than that of the high melting point material; both the high melting point material and the marking material are in block shape, and the sum of the heights of the two is smaller than that of the crucible inner wall height.
进一步的,所述气体成分监测系统包括气相质谱和数据处理反馈装置;所述气相质谱收集到的数据送入到数据处理反馈装置分析,当气体中标记材料的成分超过某一阈值时,所述数据处理反馈装置发出指令,所述激光器停止工作。Further, the gas composition monitoring system includes a gas phase mass spectrometer and a data processing feedback device; the data collected by the gas phase mass spectrometer is sent to the data processing feedback device for analysis, and when the composition of the marker material in the gas exceeds a certain threshold, the The data processing feedback device issues an instruction, and the laser stops working.
进一步的,通过调节激光器的功率和/或照射到高熔点材料表面激光光斑大小,调节激光光斑的功率密度到需要的范围,使得高熔点材料表面只发生熔化并伴随蒸发;蒸发速率能够通过光斑的总功率和/或功率密度来控制;Further, by adjusting the power of the laser and/or the size of the laser spot irradiated on the surface of the high-melting point material, the power density of the laser spot is adjusted to the required range, so that the surface of the high-melting point material only melts and is accompanied by evaporation; the evaporation rate can be controlled by the spot total power and/or power density to control;
进一步的,所述的坩埚通过波纹管的压缩和拉伸从而在聚变装置真空室内前进或者后退到设定位置。Further, the crucible advances or retreats to a set position in the vacuum chamber of the fusion device through the compression and stretching of the bellows.
根据本发明的另一个方面,提出一种激光稳态蒸发镀膜系统进行高熔点材料镀膜的方法,包括如下步骤:According to another aspect of the present invention, a method for coating a high melting point material with a laser steady-state evaporation coating system is proposed, comprising the following steps:
步骤1、聚变装置真空室内通入工作气体,通过离子回旋射频波(ICRF)产生等离子体放电,所述坩埚通过波纹管的压缩,前进到装置中指定位置;第一真空腔室通过抽气管道抽气,并将气压维持在1×10-5~9×10-5Pa,打开高真空电磁阀以及激光器,激光器发出的光束通过高真空激光入射窗口系统照射到坩埚中的高熔点材料表面;设置第一真空腔室内气压阈值,该气压阈值为9×10-5Pa,在后续各步骤中,均实时监测第一真空腔室内气压值,当气压值高于该阈值时,所述激光器立即停止工作,同时高真空电磁阀关闭;Step 1. The working gas is fed into the vacuum chamber of the fusion device, and the plasma discharge is generated by the ion cyclotron radio frequency (ICRF). The crucible is compressed by the bellows and advances to the designated position in the device; Evacuate and maintain the air pressure at 1×10 -5 ~ 9×10 -5 Pa, turn on the high vacuum solenoid valve and the laser, and the beam emitted by the laser irradiates the surface of the high melting point material in the crucible through the high vacuum laser incident window system; Set the air pressure threshold in the first vacuum chamber. The air pressure threshold is 9×10 -5 Pa. In the subsequent steps, the air pressure in the first vacuum chamber is monitored in real time. When the air pressure is higher than the threshold, the laser immediately Stop working, and the high vacuum solenoid valve is closed at the same time;
步骤2、设定激光输出端口运动轨迹,使光斑在高熔点材料表面运动;Step 2. Set the trajectory of the laser output port so that the light spot moves on the surface of the high melting point material;
步骤3、通过调节激光器的功率和/或照射到高熔点材料表面激光光斑大小,调节激光光斑的功率密度到需要的范围,使得高熔点材料表面只发生熔化并伴随蒸发;蒸发速率能够通过光斑的总功率和/或功率密度来控制;蒸发出的材料,被装置中ICRF产生的等离子体电离,在环向均匀ICRF等离子体辅助气相沉积的作用下弥散到第一壁,实现第一壁的均匀镀膜;当高熔点材料局部由于蒸发而穿孔,位于其下方的标记材料将会被激光蒸发,从而进入等离子体中;
步骤4、气相质谱与数据处理反馈装置相连,检测标记材料成分数值,当标记材料成分增加到某一设定的阈值后,数据处理反馈装置向激光器发出停止工作的指令;;
步骤5、高熔点材料的激光稳态蒸发镀膜实验结束后,所述坩埚通过波纹管的拉伸,后退到装置中指定位置。Step 5. After the laser steady-state evaporation coating experiment of the high-melting point material is completed, the crucible is retracted to a designated position in the device through the stretching of the bellows.
本发明的优点和积极效果:Advantage and positive effect of the present invention:
现有聚变装置中低熔点材料,例如锂,采用的是蒸发镀膜,没有针对高熔点材料的蒸发镀膜系统和方法。本发明的系统及方法提供一种能实现高熔点材料稳态蒸发镀膜系统和方法,而且相比现有的通过气态源材料实现的硅化、硼化来说,安全无毒;源材料不存在因泄漏而造成的安全问题。在镀膜的过程中不引入氢、碳等杂质。对激光入射窗口系统的气压监测,避免激光束损坏真空观察窗而造成的聚变装置真空泄漏;对聚变装置中镀膜过程的气相成分进行实时监测,可以有效避免因高熔点材料蒸发穿孔导致的激光束损伤坩埚底部以及提醒实验人员更换高熔点材料。Low-melting-point materials in existing fusion devices, such as lithium, use evaporative coating, and there is no evaporative coating system and method for high-melting point materials. The system and method of the present invention provide a system and method capable of realizing steady-state evaporation coating of high-melting point materials, and compared with the existing siliconization and boronization realized by gaseous source materials, it is safe and non-toxic; source materials do not exist Safety problems caused by leakage. During the coating process, impurities such as hydrogen and carbon are not introduced. The air pressure monitoring of the laser incident window system can avoid the vacuum leakage of the fusion device caused by the damage of the vacuum observation window by the laser beam; the real-time monitoring of the gas phase composition of the coating process in the fusion device can effectively avoid the laser beam caused by the evaporation and perforation of high melting point materials. Damage the bottom of the crucible and remind the experimenter to replace the high melting point material.
附图说明Description of drawings
图1:本发明的系统结构示意图。Figure 1: Schematic diagram of the system structure of the present invention.
其中:in:
激光器1、激光入射窗口系统2、可伸缩坩埚系统3、气体成分监测系统4;Laser 1, laser incident window system 2,
激光发生器11、激光输出端口12;
第一激光真空观察窗21、第二激光真空观察窗22、抽气管道23、真空规管24、第一真空腔室25、高真空电磁阀26、吹气接口27、抽气接口28、第二真空腔室29;The first laser
坩埚31、高熔点材料32、标记材料33、波纹管34;Crucible 31, high
气相质谱41、数据处理反馈装置42。Gas phase mass spectrometer 41 , data
具体实施方式Detailed ways
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整的描述,显然,所描述的实施例仅为本发明的一部分实施例,而不是全部的实施例,基于本发明中的实施例,本领域的普通技术人员在不付出创造性劳动的前提下所获得的所有其他实施例,都属于本发明的保护范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
根据本发明的一个实施例,本发明描述了用于聚变装置第一壁涂层制备的高熔点材料(尤其是硅和硼材料,熔点分别为1414℃和2180℃)的激光稳态蒸发系统。总体地,通过将激光光斑的高能量密度调控在一定的范围,使之可以将高熔点材料熔化进而实现稳态的蒸发。蒸发出的蒸气通过聚变装置中的等离子体辅助气相沉积的作用均匀地涂覆于第一壁表面,实现杂质抑制以及对再循环的控制。对激光入射窗口系统的气压监测,避免激光束损坏真空观察窗而造成的聚变装置真空泄漏。并且巧妙地在可伸缩坩埚内底部与高熔点材料之间装有标记材料,当激光熔穿高熔点材料时,会紧接着熔化并蒸发标记材料而不会损坏可伸缩坩埚。同时,标记材料会进入等离子体中,被气体成分监测系统实时监测到,从而知道可伸缩坩埚内的高熔点材料需要更换,并停止激光器工作,避免损坏坩埚,从而保障了该系统的安全、平稳运行。According to an embodiment of the present invention, the present invention describes a laser steady-state evaporation system for high melting point materials (especially silicon and boron materials, melting points are 1414°C and 2180°C respectively) for the preparation of the first wall coating of a fusion device. In general, by adjusting the high energy density of the laser spot within a certain range, it is possible to melt high-melting point materials and achieve steady-state evaporation. The evaporated vapor is evenly coated on the surface of the first wall through the plasma-assisted vapor deposition in the fusion device, so as to realize the suppression of impurities and the control of recirculation. The air pressure monitoring of the laser incident window system avoids the vacuum leakage of the fusion device caused by the laser beam damaging the vacuum observation window. And the marking material is ingeniously installed between the inner bottom of the retractable crucible and the high melting point material. When the laser melts through the high melting point material, the marking material will be melted and evaporated without damaging the retractable crucible. At the same time, the marking material will enter the plasma and be monitored in real time by the gas composition monitoring system, so that it is known that the high melting point material in the retractable crucible needs to be replaced, and the laser is stopped to avoid damage to the crucible, thus ensuring the safety and stability of the system run.
图1示意性地表示用于聚变装置的高熔点材料的激光稳态蒸发系统。包括激光器1、激光入射窗口系统2、可伸缩坩埚系统3以及气体成分监测系统4;所述激光器1安装于聚变装置真空室外的顶部,激光束从激光发生器11产生,在激光输出端口12内经透镜汇聚后射出;所述的可伸缩坩埚系统3包括位于聚变装置真空室中的可伸缩坩埚31,所述的可伸缩坩埚31内部放置有待稳态蒸发的高熔点材料32,所述高熔点材料32与所述的可伸缩坩埚31内底部之间还放有另一标记材料33;所述标记材料33的熔点低于所述高熔点材料32;所述的可伸缩坩埚31可以通过波纹管34的拉伸和压缩从而进入到设定位置或者退到聚变装置限制器后面的位置;所述激光器1发出的激光通过所述的激光入射窗口系统2照射到所述高熔点材料32表面,通过改变所述激光器1的功率和照射到所述高熔点材料32表面光斑大小,从而调节光斑的功率密度,使所述高熔点材料32实现稳态蒸发;所述气体成分监测系统4用来监测真空室内气体成分,当气体中标记材料33的成分超过某一阈值时,所述激光器1停止工作。Figure 1 schematically represents a laser steady-state evaporation system for high-melting-point materials for fusion devices. It includes a laser 1, a laser incident window system 2, a
激光器1的激光输出端口12位于聚变装置真空室外部的顶部。激光光斑通过激光入射窗口系统2,照射到位于可伸缩坩埚31内的高熔点材料32表面。The
激光发生器11使用半导体激光器。半导体激光由于光强分布较均匀,可以较容易实现均匀且稳定的蒸发。根据激光与材料相互作用的特性,激光光斑的功率密度在5×104~1×106W/cm2范围内,材料会熔化,但是不会有剧烈的液滴从熔池中喷出,从而实现稳态的蒸发。通过调节激光器1的功率和/或照射到高熔点材料32表面激光光斑大小,调节激光光斑的功率密度到需要的范围,使得高熔点材料表面只发生熔化并伴随蒸发;蒸发速率能够通过光斑的总功率和/或功率密度来控制。激光束照射到高熔点材料32表面光斑大小可以通过更换具有不同透镜或透镜组的激光输出端口12以及调节激光输出端口12与高熔点材料32间的距离来实现。尽量使蒸发速度增大的同时,保证稳态的蒸发。经过本发明试验测得,对于硅材料来说,当激光的功率2500W,光斑直径0.9mm,(此时功率密度为3.9×105W/cm2),硅的蒸发速率为0.8mg/s,可以满足EAST聚变装置中的镀膜速率要求。The
激光输出端口可以根据设定的程序运动,使光斑在高熔点材料表面运动后,使高熔点材料尽量地被充分利用。当高熔点材料局部由于蒸发而穿孔,位于其下方的标记材料33将会被激光蒸发,从而进入等离子体中。此时,实时成分监测系统的气相质谱41就会检测到标记材料成分增加。气相质谱41与数据处理反馈装置42相连,当标记材料33成分增加到某一设定的阈值后,数据处理反馈装置42向激光器1发出停止工作的指令。因此,标记材料33的存在可以在提醒操作者更换高熔点材料的同时,有效避免激光损伤坩埚31。The laser output port can move according to the set program, so that after the light spot moves on the surface of the high melting point material, the high melting point material can be fully utilized as much as possible. When the high melting point material is locally perforated due to evaporation, the marking
激光入射窗口系统2的激光第二激光真空观察窗22在高熔点材料蒸发的过程中,即使有吹气接口25通过吹入气体进行吹扫,但是随着时间的积累仍可能逐渐有高熔点材料32的蒸气沉积在第二激光真空观察窗22下表面,从而影响激光束的透过效果,甚至激光会损坏第二真空观察窗22,从而破坏聚变装置的真空环境。第一激光真空观察窗21也有可能由于污染或者其它原因被激光损坏。During the evaporation process of the second laser
由于聚变实验对真空要求很高,一旦由于此原因导致真空严重泄漏,后续需要耗费较长的时间才能恢复。所以,当第二激光真空观察窗22或者第一激光真空观察窗21受到损坏而泄漏时,真空腔室25的气压会升高。此时,高真空规管会把检测到的压强突然升高、超过某一设定阈值的信号发送给数据处理反馈装置42。数据处理反馈装置42向激光器1发出停止工作的指令。激光入射窗口系统2可以有效避免由于激光蒸发系统而导致的真空泄漏的风险。Because fusion experiments have high requirements on vacuum, once the vacuum is seriously leaked due to this reason, it will take a long time to recover. Therefore, when the second laser
根据本发明的实施例,本发明的一种激光稳态蒸发镀膜系统进行高熔点材料镀膜的方法,包括如下步骤:According to an embodiment of the present invention, a method for coating a high melting point material in a laser steady-state evaporation coating system of the present invention includes the following steps:
步骤1、聚变装置真空室内通入工作气体,通过离子回旋射频波(ICRF)产生等离子体放电,所述坩埚31通过波纹管34的压缩,前进到装置中指定位置;第一真空腔室25通过抽气管道23抽气,并将气压维持在1×10-5~9×10-5Pa,设置第一真空腔室内气压阈值,该气压阈值为9×10-5Pa,在后续各步骤中,均实时监测第一真空腔室内气压值,当气压值高于该阈值时,所述激光器立即停止工作,同时高真空电磁阀关闭;打开高真空电磁阀以及激光器,激光器发出的光束通过高真空激光入射窗口系统2照射到坩埚中的高熔点材料表面;Step 1. The working gas is introduced into the vacuum chamber of the fusion device, and the plasma discharge is generated by the ion cyclotron radio frequency (ICRF). The
步骤2、设定激光输出端口运动轨迹,使光斑在高熔点材料表面运动;Step 2. Set the trajectory of the laser output port so that the light spot moves on the surface of the high melting point material;
步骤3、通过调节激光器1的功率和/或照射到高熔点材料32表面激光光斑大小,调节激光光斑的功率密度到需要的范围,使得高熔点材料表面只发生熔化并伴随蒸发;蒸发速率能够通过光斑的总功率和/或功率密度来控制;蒸发出的材料,被装置中ICRF产生的等离子体电离,在环向均匀ICRF等离子体辅助气相沉积的作用下弥散到第一壁,实现第一壁的均匀镀膜;当高熔点材料局部由于蒸发而穿孔,位于其下方的标记材料33将会被激光蒸发,从而进入等离子体中;
步骤4、气相质谱41与数据处理反馈装置42相连,检测气体中标记材料33成分数值,当标记材料33成分增加到某一设定的阈值后,数据处理反馈装置42向激光器1发出停止工作的指令;
步骤5、高熔点材料的激光稳态蒸发镀膜实验结束后,所述坩埚31通过波纹管34的拉伸,后退到装置中指定位置。Step 5: After the laser steady-state evaporation coating experiment of the high-melting point material is finished, the
尽管上面对本发明说明性的具体实施方式进行了描述,以便于本技术领域的技术人员理解本发明,且应该清楚,本发明不限于具体实施方式的范围,对本技术领域的普通技术人员来讲,只要各种变化在所附的权利要求限定和确定的本发明的精神和范围内,这些变化是显而易见的,一切利用本发明构思的发明创造均在保护之列。Although the illustrative specific embodiments of the present invention have been described above, so that those skilled in the art can understand the present invention, it should be clear that the present invention is not limited to the scope of the specific embodiments. For those of ordinary skill in the art, As long as various changes are within the spirit and scope of the present invention defined and determined by the appended claims, these changes are obvious, and all inventions and creations using the concept of the present invention are included in the protection list.
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