CN112941516A - Precise control type etching solution and etching method thereof - Google Patents
Precise control type etching solution and etching method thereof Download PDFInfo
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- CN112941516A CN112941516A CN202011608508.1A CN202011608508A CN112941516A CN 112941516 A CN112941516 A CN 112941516A CN 202011608508 A CN202011608508 A CN 202011608508A CN 112941516 A CN112941516 A CN 112941516A
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- 238000005530 etching Methods 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 230000008719 thickening Effects 0.000 claims abstract description 12
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 11
- 239000013522 chelant Substances 0.000 claims abstract description 11
- 150000007524 organic acids Chemical class 0.000 claims abstract description 9
- PMUNIMVZCACZBB-UHFFFAOYSA-N 2-hydroxyethylazanium;chloride Chemical compound Cl.NCCO PMUNIMVZCACZBB-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002738 chelating agent Substances 0.000 claims abstract description 8
- 239000003112 inhibitor Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- -1 ketone compound Chemical class 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims abstract description 5
- 239000003381 stabilizer Substances 0.000 claims abstract description 5
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 17
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 235000006408 oxalic acid Nutrition 0.000 claims description 5
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 5
- 229960004889 salicylic acid Drugs 0.000 claims description 5
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- VJLOFJZWUDZJBX-UHFFFAOYSA-N bis(2-hydroxyethyl)azanium;chloride Chemical compound [Cl-].OCC[NH2+]CCO VJLOFJZWUDZJBX-UHFFFAOYSA-N 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 claims description 2
- 235000011054 acetic acid Nutrition 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 235000015165 citric acid Nutrition 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- 239000007791 liquid phase Substances 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- 239000001384 succinic acid Substances 0.000 claims description 2
- 235000011044 succinic acid Nutrition 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 4
- 238000007664 blowing Methods 0.000 abstract description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 13
- 239000007789 gas Substances 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000779 smoke Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000019633 pungent taste Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a precisely controlled etching solution and an etching method thereof, the precisely controlled etching solution comprises 25-30 parts of hydrogen peroxide stabilizer, 3-4 parts of hydrogen peroxide, 0.8-5 parts of ferric trichloride, 1-1.3 parts of organic acid, 0.2-0.4 part of etching inhibitor, 2-5 parts of thickening auxiliary agent, 0.2-0.4 part of chelating agent and 72-90 parts of deionized water, the etching inhibitor adopts a long-chain ketone compound, the thickening auxiliary agent adopts ethanolamine chloride, the chelating agent adopts a bidentate chelate, so that the integral precisely controlled etching solution obtains enough viscosity, the etching mode is to limit the movement range of the precisely controlled etching solution, keep the mobility of the precisely controlled etching solution by utilizing a heating and blowing device and carry out etching operation on the premise of precise control, and the invention has the advantages that the etching solution can be stably controlled to advance, and the technical effect of improving the precision of etching operation control is realized.
Description
Technical Field
The invention relates to the field of etching processes, in particular to a precisely controlled etching solution and an etching method thereof.
Background
Along with the rapid development in the electronic field, the PCB is also more and more widely used, the etching is an important process in the production process of the circuit board, generally, concentrated hydrochloric acid is adopted for etching in the prior art, but the concentrated hydrochloric acid is extremely volatile in the air, and because of the strong volatility of the concentrated hydrochloric acid, the volatilized hydrogen chloride gas can be combined with the water vapor in the air to form hydrochloric acid smoke to be diffused in the air, so that the production workshop has strong pungent taste, the operator inhales the hydrochloric acid smoke to influence the health, the tail gas is directly discharged to pollute the environment, the environment protection and safety requirements are not met, and the cost treatment of the tail gas is high. In addition, the etching rate using concentrated hydrochloric acid is slow. Therefore, how to overcome the defects in the existing acidic etching solution, an environment-friendly acidic etching solution is developed and designed, the workshop environment is improved, the environmental pollution is reduced, and the problem of controlling the etching rate of the circuit board becomes a problem to be solved urgently for enterprises.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to provide a precisely controlled etching solution and an etching method thereof aiming at the defects of the prior art.
The technical scheme is as follows: the invention relates to a precisely controlled etching solution, which comprises the following components:
25-30 parts of a hydrogen peroxide stabilizer, 3-4 parts of hydrogen peroxide, 0.8-5 parts of ferric trichloride, 1-1.3 parts of organic acid, 0.2-0.4 part of an etching inhibitor, 2-5 parts of a thickening auxiliary agent, 0.2-0.4 part of a chelating agent and 72-90 parts of deionized water;
the etching inhibitor adopts a long-chain ketone compound, the thickening auxiliary agent adopts ethanolamine chloride, the chelating agent adopts a bidentate chelate, and the organic acid adopts at least one of oxalic acid, tartaric acid, citric acid, acetic acid, glycolic acid, maleic acid, succinic acid, malic acid, salicylic acid, benzoic acid, succinic acid and lactic acid;
the bidentate chelate is at least one of ethylenediamine, 2' -bipyridine, 1, 10-phenanthroline and oxalate;
the thickening auxiliary agent adopts one of monoethanolamine chloride or diethanolamine chloride;
and adjusting the pH value to 3-5 in the whole liquid phase environment.
Preferably, the bidentate chelate is 2,2' -bipyridine, and the organic acid is salicylic acid.
Preferably, oxalic acid is used as the bidentate chelate and the organic acid.
Preferably, the thickening aid is a diethanolamine chloride.
The etching method using the precisely controlled etching solution comprises the following steps:
s1, defining the range of the etching pattern, and performing and finishing screen printing;
s2, configuring an embedded limit frame along the etching line constructed by screen printing;
s3, injecting a precisely controlled etching solution along the embedded limit frame;
s4, configuring a heating blower to push the precisely controlled etching solution along the embedded limit frame by air pressure to make it flow along the extending direction of the embedded limit frame at a stable speed and complete the etching operation.
Compared with the prior art, the invention has the following beneficial effects: the etching inhibitor adopts a long-chain ketone-based compound, the thickening auxiliary agent adopts ethanolamine chloride, and the chelating agent adopts a bidentate chelate, so that the integral precisely-controlled etching solution obtains enough viscosity, the etching mode adopts a mode of limiting the movement range of the precisely-controlled etching solution, keeping the mobility of the precisely-controlled etching solution by using a heating and blowing device and carrying out etching operation on the premise of precise control, and the technical effect of improving the precision of etching operation control is realized.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like are used in the indicated orientations and positional relationships, merely to facilitate description of the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and is not to be construed as limiting the invention.
In the present invention, unless otherwise specifically stated or limited, the terms "mounted," "connected," "fixed," and the like are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; the connection can be mechanical connection, electrical connection or communication connection; either directly or indirectly through intervening media, either internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The technical solution of the present invention will be described in detail below with specific examples. The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments.
Example 1: a precisely controlled etching solution comprises the following components:
25 parts of hydrogen peroxide stabilizer, 3 parts of hydrogen peroxide, 0.8 part of ferric trichloride, 1 part of salicylic acid, 0.2 part of long-chain ketone compound, 2 parts of diethanolamide chloride, 0.2 part of 2,2' -bipyridine and 72 parts of deionized water;
the etching method using the precisely controlled etching solution comprises the following steps:
s1, defining the range of the etching pattern, and performing and finishing screen printing;
s2, configuring an embedded limit frame along the etching line constructed by screen printing;
s3, injecting a precisely controlled etching solution along the embedded limit frame;
s4, configuring a heating blower to push the precisely controlled etching solution along the embedded limit frame by air pressure to make it flow along the extending direction of the embedded limit frame at a stable speed and complete the etching operation.
Example 2: a precisely controlled etching solution comprises the following components:
30 parts of hydrogen peroxide stabilizer, 4 parts of hydrogen peroxide, 5 parts of ferric trichloride, 1.7 parts of oxalic acid, 0.2-0.4 part of long-chain ketone compound, 2-5 parts of monoethanolamine chloride and 72-90 parts of deionized water;
the etching method using the precisely controlled etching solution comprises the following steps:
s1, defining the range of the etching pattern, and performing and finishing screen printing;
s2, configuring an embedded limit frame along the etching line constructed by screen printing;
s3, injecting a precisely controlled etching solution along the embedded limit frame;
s4, configuring a heating blower to push the precisely controlled etching solution along the embedded limit frame by air pressure to make it flow along the extending direction of the embedded limit frame at a stable speed and complete the etching operation.
The technical effect embodied by the whole set of technical scheme is that the etching inhibitor adopts a long-chain ketone-based compound, the thickening auxiliary agent adopts ethanolamine chloride, and the chelating agent adopts a bidentate chelate, so that the integral precisely-controlled etching solution obtains enough viscosity, the etching mode adopts a mode of limiting the motion range of the precisely-controlled etching solution, keeping the mobility of the precisely-controlled etching solution by using a heating and blowing device and carrying out etching operation on the premise of precise control, the technical effect of improving the precision of etching operation control is realized, and the technical progress is obvious.
In the present invention, unless otherwise explicitly specified or limited, the first feature "on" or "under" the second feature may be directly contacting the first feature and the second feature or indirectly contacting the first feature and the second feature through an intermediate. Also, a first feature "on," "above," and "over" a second feature may mean that the first feature is directly above or obliquely above the second feature, or that only the first feature is at a higher level than the second feature. A first feature "under," "below," and "beneath" a second feature may be directly or obliquely under the first feature or may simply mean that the first feature is at a lower level than the second feature. In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example" or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example.
Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (5)
1. A precisely controlled etching solution is characterized in that: comprises the following components:
25-30 parts of a hydrogen peroxide stabilizer, 3-4 parts of hydrogen peroxide, 0.8-5 parts of ferric trichloride, 1-1.3 parts of an organic acid, 0.2-0.4 part of an etching inhibitor, 2-5 parts of a thickening auxiliary agent, 0.2-0.4 part of a chelating agent and 72-90 parts of deionized water;
the etching inhibitor adopts a long-chain ketone compound, the thickening auxiliary agent adopts ethanolamine chloride, the chelating agent adopts a bidentate chelate, and the organic acid adopts at least one of oxalic acid, tartaric acid, citric acid, acetic acid, glycolic acid, maleic acid, succinic acid, malic acid, salicylic acid, benzoic acid, succinic acid and lactic acid;
the bidentate chelate is at least one of ethylenediamine, 2' -bipyridine, 1, 10-phenanthroline and oxalate;
the thickening auxiliary agent adopts one of monoethanolamine chloride or diethanolamine chloride;
and adjusting the pH value to 3-5 in the whole liquid phase environment.
2. The precisely controlled etching solution of claim 1, wherein: the bidentate chelate adopts 2,2' -bipyridyl, and the organic acid adopts salicylic acid.
3. The precisely controlled etching solution of claim 1, wherein: the bidentate chelate and the organic acid both adopt oxalic acid.
4. The precisely controlled etching solution of claim 1, wherein: the thickening auxiliary agent adopts diethanolamine chloride.
5. The etching method using the precisely controlled etching solution according to claims 1 to 5, characterized in that: the method comprises the following steps:
s1, defining the range of the etching pattern, and performing and finishing screen printing;
s2, configuring an embedded limit frame along the etching line constructed by screen printing;
s3, injecting a precisely controlled etching solution along the embedded limit frame;
s4, configuring a heating blower to push the precisely controlled etching solution along the embedded limit frame by air pressure to make it flow along the extending direction of the embedded limit frame at a stable speed and complete the etching operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011608508.1A CN112941516A (en) | 2020-12-29 | 2020-12-29 | Precise control type etching solution and etching method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011608508.1A CN112941516A (en) | 2020-12-29 | 2020-12-29 | Precise control type etching solution and etching method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112941516A true CN112941516A (en) | 2021-06-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011608508.1A Pending CN112941516A (en) | 2020-12-29 | 2020-12-29 | Precise control type etching solution and etching method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN112941516A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1311350A (en) * | 2000-12-27 | 2001-09-05 | 珠海道元科技发展有限公司 | Electric conductive film etching agent and etching method |
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| CN101297396A (en) * | 2005-10-28 | 2008-10-29 | 关东化学株式会社 | Palladium-selective etching solution and method for controlling etching selectivity |
| CN103003923A (en) * | 2010-07-16 | 2013-03-27 | 高级技术材料公司 | Aqueous cleaner for the removal of post-etch residues |
| CN103352224A (en) * | 2013-07-01 | 2013-10-16 | 广东工业大学 | Double-face etching method for metal product |
| CN104513981A (en) * | 2013-10-02 | 2015-04-15 | 易安爱富科技有限公司 | Etching solution composition for copper and molybdenum containing film |
| CN105297022A (en) * | 2014-07-24 | 2016-02-03 | 关东化学株式会社 | Etching liquid composition and etching method |
| CN106332460A (en) * | 2016-08-15 | 2017-01-11 | 中国科学院化学研究所 | A high-precision circuit and its preparation method |
| CN106337182A (en) * | 2015-07-09 | 2017-01-18 | 易安爱富科技有限公司 | Etchant composition for metal layer containing silver or silver alloy |
| CN107287594A (en) * | 2017-06-01 | 2017-10-24 | 东莞市达诚显示材料有限公司 | A kind of cupro-nickel plural layers etching solution |
-
2020
- 2020-12-29 CN CN202011608508.1A patent/CN112941516A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1311350A (en) * | 2000-12-27 | 2001-09-05 | 珠海道元科技发展有限公司 | Electric conductive film etching agent and etching method |
| CN1506496A (en) * | 2002-12-06 | 2004-06-23 | 美格株式会社 | Etchant |
| CN101297396A (en) * | 2005-10-28 | 2008-10-29 | 关东化学株式会社 | Palladium-selective etching solution and method for controlling etching selectivity |
| CN103003923A (en) * | 2010-07-16 | 2013-03-27 | 高级技术材料公司 | Aqueous cleaner for the removal of post-etch residues |
| CN103352224A (en) * | 2013-07-01 | 2013-10-16 | 广东工业大学 | Double-face etching method for metal product |
| CN104513981A (en) * | 2013-10-02 | 2015-04-15 | 易安爱富科技有限公司 | Etching solution composition for copper and molybdenum containing film |
| CN105297022A (en) * | 2014-07-24 | 2016-02-03 | 关东化学株式会社 | Etching liquid composition and etching method |
| CN106337182A (en) * | 2015-07-09 | 2017-01-18 | 易安爱富科技有限公司 | Etchant composition for metal layer containing silver or silver alloy |
| CN106332460A (en) * | 2016-08-15 | 2017-01-11 | 中国科学院化学研究所 | A high-precision circuit and its preparation method |
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Application publication date: 20210611 |