CN112967947B - Device and method for removing gallium metal - Google Patents

Abstract

The invention relates to a device and a method for removing metal gallium, which are used for removing the metal gallium remained on a micro light-emitting diode chip after laser stripping, wherein the device comprises: an apparatus body comprising a process chamber; the fluid used for removing the gallium metal remained on the surface of the micro light-emitting diode chip after laser stripping is contained in the process chamber; wherein the fluid has a temperature greater than or equal to the melting point of the metallic gallium. The micro light-emitting diode chip stripped by the laser is soaked in the fluid by adopting a physical method according to the characteristic of low melting point (29.78 ℃) of the metal gallium, so that the metal gallium is changed from a solid state to a molten state, and the aim of removing the metal gallium is fulfilled. The yield of mass transfer and the quality of chips are improved.

Description

A device and method for removing metal gallium

technical field

The invention relates to the technical field of semiconductors, in particular to a device and method for removing gallium metal.

Background technique

Micro Light Emitting Diode (Micro-LED) technology is a new generation of display technology, in which mass transfer technology is an extremely important part of Micro-LED manufacturing. Micro-LED mass transfer technology is a technology that transfers thousands of Micro-LEDs from the growth substrate to the target substrate. After the laser lift-off process in the mass transfer section, metal gallium will remain on the electrodes of the micro-LED chip. At present, gallium metal is usually removed by washing with acid (dilute hydrochloric acid). Although the residual gallium metal can be removed by pickling, in the process of pickling, the acid will corrode the electrodes on the micro-LED chip, which is very easy to damage the micro-LED chip. LED chip damage.

Therefore, how to remove the residual gallium metal without damaging the micro-LED chip is an urgent problem to be solved.

Contents of the invention

In view of the deficiencies in the prior art above, the purpose of the present invention is to provide a device and method for removing gallium metal, aiming to provide a technical solution for removing residual gallium metal without damaging the chip and electrode of the micro-light-emitting diode.

Technical scheme of the present invention is as follows:

A device for removing gallium metal, comprising:

a device body, the device body including a process chamber;

The process chamber is filled with a fluid for removing metal gallium remaining on the surface of the micro-light-emitting diode chip after laser lift-off; wherein, the fluid has a temperature greater than or equal to the melting point of the metal gallium.

In the above-mentioned device for removing gallium metal, the purpose of removing gallium metal is achieved by setting the process chamber to contain a fluid with a temperature equal to or higher than the melting point of gallium metal, and using the fluid to change the gallium metal from a solid state to a molten state. The device has a simple structure and is easy to operate.

Optionally, a sensor arranged in the process chamber for detecting process parameters in the process chamber is also included.

Optionally, the sensors include temperature sensors, liquid level sensors and vacuum sensors;

The temperature sensor is used to detect the temperature of the fluid in the process chamber;

The liquid level sensor is used to detect the liquid level of the fluid in the process chamber;

The vacuum sensor is used to detect the vacuum in the process chamber.

In the above-mentioned device, by setting a temperature sensor, a liquid level sensor and a vacuum sensor in the process chamber, the fluid inside the device can be better monitored.

Optionally, the process chamber includes a fluid inlet and a fluid outlet, and valves for controlling fluid flow are arranged at the fluid inlet and the fluid outlet.

Optionally, both the fluid inlet and the fluid outlet are further provided with a temperature detector for detecting the temperature of the fluid and a flow detector for detecting the flow of the fluid.

Optionally, the top of the process chamber is provided with a pumping port for vacuuming, and the pumping port is connected to a vacuum pump through a vacuuming pipeline.

Based on the same inventive concept, the present invention also provides a method for removing gallium metal, wherein, based on a device for removing gallium metal, the device includes a process chamber; the method includes:

Provide a temporary storage substrate after laser peeling; wherein, a number of micro light emitting diode chips are adhered to the temporary storage substrate;

transferring the temporary storage substrate into the process chamber; and

Passing a certain amount of fluid into the process chamber to remove the metal gallium remaining on the surface of the micro light emitting diode chip;

Wherein, the fluid has a temperature greater than or equal to the melting point of the gallium metal.

A method for removing metal gallium described above uses a fluid with a temperature greater than or equal to the melting point of metal gallium to change the metal gallium remaining on the surface of the micro-light-emitting diode chip from a solid state to a molten state, and the molten metal gallium is removed from the The surface of the micro light-emitting diode chip is peeled off to achieve the purpose of removing metal gallium. That is to use a physical method to remove metal gallium, which is simple and easy to operate.

Optionally, the process chamber includes a fluid inlet and a fluid outlet; the step of introducing fluid into the process chamber to remove residual gallium metal on the surface of the micro-light-emitting diode chip includes:

closing the fluid outlet, and passing fluid into the process chamber through the fluid inlet;

During the process of feeding the fluid, the liquid level and temperature of the fluid in the process chamber are detected in real time;

In response to detecting that the liquid level and temperature of the fluid in the process chamber reach preset parameters, the fluid outlet is opened, so that the fluid carrying gallium metal flows out from the fluid outlet.

Optionally, before introducing fluid into the process chamber, it also includes:

Judging whether the vacuum degree in the process chamber meets a preset requirement.

Optionally, the fluid is a fluid that does not react with the micro-LED chip.

Based on the same inventive concept, the present invention also provides a laser lift-off system, including:

A laser lift-off device configured to separate the temporary storage substrate to which a plurality of micro-LED chips are attached from the growth substrate;

A device for removing gallium metal, the device comprising a process chamber; the process chamber is filled with a fluid for removing gallium metal remaining on the surface of the micro-light-emitting diode after laser lift-off;

Wherein, the fluid has a temperature greater than or equal to the melting point of the gallium metal; and

The transfer device is configured to transfer the temporary storage substrate after laser lift-off into the process chamber.

The above system transfers the temporary storage substrate stripped by the laser lift-off equipment into the process chamber through the transfer device, and uses the fluid in the process chamber to remove residual gallium metal, which can be used for mass production.

Description of drawings

FIG. 1 is a schematic diagram of a laser lift-off process in the prior art;

Fig. 2 is a schematic structural view of a device for removing gallium metal provided by an embodiment of the present invention;

Fig. 3 is a schematic flow chart of a method for removing metal gallium provided by an embodiment of the present invention;

4 is a schematic flow diagram of introducing fluid into the process chamber in the method for removing gallium metal provided by an embodiment of the present invention;

Fig. 5 is a schematic diagram of a laser lift-off system provided by an embodiment of the present invention.

Explanation of reference signs:

10-process chamber; 11-temperature sensor; 12-liquid level sensor; 13-vacuum sensor; 100-fluid inlet; 101-valve; 102-temperature detector; 103-flow detector; 104-electronic pressure gauge; 110-fluid outlet; 111-valve; 112-temperature detector; 113-flow detector; 114-electronic pressure gauge; ; 210-laser source; 211-laser galvanometer; 220-control device.

Detailed ways

In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terminology used herein in the description of the present invention is only for the purpose of describing specific embodiments, and is not intended to limit the present invention.

Micro Light Emitting Diode (Micro-LED) technology is a new generation of display technology, in which mass transfer technology is an extremely important part of Micro-LED manufacturing, Micro-LED mass transfer technology is through the temporary substrate The technology of transferring thousands of Micro-LEDs from the growth substrate to the target substrate. In the transfer process, the Micro-LED chips are usually adhered to the temporary substrate first, and then the Micro-LED chips are bonded to the temporary substrate using laser lift-off technology. -The LED chip is peeled from the growth substrate, and finally the temporary storage substrate with the Micro-LED chip attached is bonded to the target substrate.

In the exemplary technology, the material of the connection part between the Micro-LED chip and the growth substrate is GaN (gallium nitride), and GaN can be partially decomposed to generate nitrogen gas (2GaN→2Ga+N ₂ ) when irradiated by laser light. Therefore, when the When the material of the connection part between the Micro-LED and the growth substrate is GaN, when the laser is used to irradiate the side of the growth substrate away from the Micro-LED, the laser can pass through the transparent growth substrate and irradiate the Micro-LED. On one side of the LED, part of the GaN at the connection between the Micro-LED and the growth substrate decomposes, and the nitrogen gas generated can form a certain thrust, which helps the Micro-LED to fall off from the growth substrate. Gallium metal will remain on the electrode surface of the Micro-LED, as shown in Figure 1. The metal gallium remaining on the micro-LED chip after laser stripping is often pickled. damage.

Based on this, the present invention hopes to provide a solution capable of solving the above-mentioned technical problems, and its details will be described in subsequent embodiments.

Please refer to FIG. 2, as shown in FIG. 2, the present invention provides a device for removing gallium metal, the device for removing gallium metal includes: a device body, the device body includes a process chamber 10, the process The chamber 10 contains a fluid for removing metal gallium remaining on the surface of the micro-LED chip after laser lift-off, and the temperature of the fluid is greater than or equal to the melting point of the metal gallium.

In this embodiment, the process chamber 10 may be a container with an open top or a completely sealed container. It is easy to understand that the process chamber 10 has openings for putting in and taking out micro-LED chips. The specific size of the process chamber 10 can be set according to actual needs, and is not limited here. The shape of the process chamber 10 may be cylindrical, square groove, etc., and the material of the process chamber 10 may be metal or plastic, which is not limited here.

In an implementation of this embodiment, a temperature sensor 11 for detecting the temperature of the fluid (the fluid inside the process chamber 10 ) is also provided on the inner surface of the process chamber 10 , through which the temperature sensor 11 To detect the temperature of the fluid inside the process chamber 10 in real time, so that the temperature of the fluid meets the process requirements. The temperature sensor 11 may be an electronic temperature sensor or other types of temperature sensors.

In an implementation manner of this embodiment, a liquid level sensor 12 for detecting the liquid level of the fluid is also provided on the inner surface of the process chamber 10 to monitor the fluid level inside the process chamber 10 Detection to prevent the liquid level from being too low (lower than the lower limit of the liquid level setting) or too high (higher than the upper limit of the liquid level setting), which will affect the removal effect of metal gallium. Wherein, the lower limit of the liquid level setting can be at the position of 30% of the volume of the process chamber 10, of course it can also be at the position of 40% of the volume of the process chamber 10 or at the position of 20% of the volume of the process chamber 10 . The upper limit of the liquid level setting can be at the position of 70% of the volume of the process chamber 10 , of course, it can also be at the position of 80% of the volume of the process chamber 10 or at the position of 90% of the volume of the process chamber 10 .

In an implementation manner of this embodiment, a fluid inlet 100 is provided on the process chamber 10, and a valve 101 for controlling fluid flow is provided at the fluid inlet 100, and is used for detecting A temperature detector 102 for fluid temperature, and a flow detector 103 for detecting fluid flow at the fluid inlet 110 . The valve 101 may be a switching solenoid valve with a feedback function, through which the switching solenoid valve with a feedback function can be remotely controlled. The temperature detector 102 may be the same type and type as the temperature detector installed inside the process chamber 10, or may be different. The flow detector 103 may be an electronic flowmeter, a rotameter, and the like. It is easy to understand that an electronic pressure gauge 104 can also be provided to detect the pressure at the fluid inlet 100 . The injected fluid can be conveniently controlled by setting an electronic flowmeter and an electronic pressure gauge. For example, if the inlet fluid pressure is detected to be low by the electronic pressure gauge, the fluid flow rate entering the process chamber 10 may also decrease. The outlet 110 is open, if it is not adjusted, it will easily lead to fluctuations in the liquid level, affecting the removal of gallium metal. At this time, it can be adjusted by adjusting the opening degree of the electromagnetic valve at the fluid outlet 110 , and of course, it can also be adjusted by increasing the pressure at the fluid inlet 100 .

In an implementation manner of this embodiment, the process chamber 10 is provided with a fluid outlet 110, and the fluid outlet 110 is provided with a valve 111 for controlling the fluid flow, and is used for detecting the temperature of the fluid at the fluid outlet 110. A temperature detector 112, and a flow detector 113 for detecting the fluid flow at the fluid outlet 110. The valve 111 may be a switching solenoid valve with a feedback function, through which the switching solenoid valve with a feedback function can be remotely controlled. The temperature detector 112 may be the same type and type as the temperature detector installed inside the process chamber 10, or may be different. The flow detector 113 may be an electronic flow meter, a rotameter, and the like. It is easy to understand that an electronic pressure gauge 114 may also be provided to detect the pressure at the fluid outlet 110 .

It is easy to understand that in the continuous production process, the temperature inside the process chamber 10 is not uniform. state to be removed, but the removal rate is slow), the temperature of the outflowing fluid can be detected by setting the temperature detector 112, and the temperature of the fluid inside the process chamber 10 can be reversely estimated according to the detection result. For example, the temperature of the fluid flowing out is 33°C, and the temperature of the fluid detected by the temperature sensor on the inner surface of the process chamber 10 is 40°C, which means that the temperature of the fluid inside the process chamber 10 is locally low. The gallium removal efficiency can be adjusted by increasing the temperature of the injected fluid.

In this embodiment, the fluid inlet 100 is arranged above the process chamber 10, and the fluid outlet 110 is arranged below the process chamber 10, that is, the upper part of the process chamber 10 is the fluid inlet 100, and the lower part is the fluid outlet. 110. During use, supplementing the process chamber 10 with fluid from above can avoid disturbing the fluid at the bottom and affecting the removal effect.

In an implementation manner of this embodiment, the process chamber 10 is further provided with a vacuum degree sensor 13 for detecting the vacuum degree inside the process chamber 10 . During the process of fluid entering and exiting the process chamber 10 and taking and placing micro-LED chips, the vacuum degree in the process chamber 10 will be affected to a certain extent, so a The vacuum pumping port 120 is used to vacuum the process chamber 10 to ensure the vacuum atmosphere of the process chamber 10. The pumping port 120 passes through a vacuum pump (not shown in the figure) and a vacuum pump (not shown in the figure). out) connection.

Based on the above-mentioned device for removing gallium metal, the present invention also provides a method for removing gallium metal, as shown in Figure 3, the method includes steps:

S10. Provide a temporary storage substrate after laser stripping; wherein, a plurality of micro light-emitting diode chips are adhered to the temporary storage substrate;

Specifically, firstly, a device for removing gallium metal is provided, and the specific structure of the provided device for removing metal gallium is as described above, and will not be repeated here. In a vacuum environment, laser lift off the temporary storage substrate and the sapphire substrate, wherein a number of micro light emitting diode chips are adhered to the temporary storage substrate.

S20, transferring the temporary storage substrate into the process chamber;

Specifically, the temporary storage substrate may be transferred to the process chamber by gripping by a robot arm, and of course, the temporary storage substrate may also be transferred by other methods. It is easy to understand that for the transfer of the temporary storage substrates, one temporary storage substrate may be transferred each time, or multiple temporary storage substrates may be transferred each time.

S30, injecting a certain amount of fluid into the process chamber to remove metal gallium remaining on the surface of the micro-LED chip; wherein, the fluid has a temperature greater than or equal to the melting point of the metal gallium.

Specifically, after the temporary storage substrate is placed inside the process chamber 10 of the device, a fluid is passed into the process chamber 10 to make the metal gallium adhered on the temporary storage substrate and the fluid contact. Since the temperature of the fluid is greater than or equal to the melting point of the metal gallium, the metal gallium can be changed from a solid state to a molten state, and then it can be separated from the micro light-emitting diode chip to achieve the purpose of removal. Wherein, the fluid is a fluid that does not react with the micro-LED chip after heating, and the fluid includes, but is not limited to, deionized water, ultrapure water, ethanol, and the like.

In an implementation manner of this embodiment, as shown in FIG. 4, the step S30 specifically includes:

S301. Close the fluid outlet, and pass fluid into the process chamber through the fluid inlet;

S202. During the process of feeding the fluid, detect the liquid level and temperature of the fluid in the process chamber in real time;

S203. In response to detecting that the liquid level and temperature of the fluid in the process chamber reach preset parameters, open the fluid outlet, so that the fluid carrying the gallium metal flows out from the fluid outlet.

In this embodiment, the process chamber 10 includes a fluid inlet 100 and a fluid outlet 110, valves, temperature detectors, pressure detectors, flow detectors, etc. are arranged at the fluid inlet 100 and the fluid outlet 110. . The fluid is introduced into the process chamber 10 through the fluid inlet 100 provided on the process chamber 10 , and the injected fluid is monitored through the detectors provided at the fluid inlet 100 to ensure the normal removal of gallium metal.

For example, using deionized water as the fluid, the switch solenoid valve at the fluid inlet 100 is opened (while the switch solenoid valve at the fluid outlet 110 is kept closed), so that the deionized water flows into the process chamber 10 . In the process of deionized water flowing in, the temperature and liquid level of the deionized water inside the process chamber 10 are monitored in real time by the temperature sensor 11 and the liquid level detector 12 arranged on the inner surface of the process chamber 10, and the temperature sensor 11 The detected temperature signal data is transmitted to the connected host (such as the main control cabinet), and the host responds to the temperature signal data. It is easy to understand that the host computer is in communication with the production computer, and there is an abnormal temperature warning on the host computer. When the temperature is lower than the melting point of metal gallium, or higher than a certain temperature such as 90°C, an abnormal signal will be sent out. If the temperature The sensor detects that the temperature of the deionized water is 20°C (lower than 29.78°C), that is, it does not meet the process setting requirements, and the abnormal information is fed back to the production computer, and the production computer monitors the temperature of the deionized water at the fluid inlet 100. Adjustment, such as increasing the inflow of deionized water, increasing the temperature of deionized water, etc.

In the same way, the liquid level signal data detected by the liquid level sensor 12 is transmitted to the host connected to it, and the host responds to the liquid level signal data. If it is detected that the liquid level of deionized water is lower than the lower limit, Feedback the abnormal information and adjust the opening of the switching solenoid valve at the fluid inlet 100 through the production computer to increase the opening of the switching solenoid valve. When the temperature and liquid level of the deionized water in the process chamber 10 are both satisfied, the fluid inlet 100 is closed. After the micro-LED chip in the process chamber 10 is soaked, it can be taken out. The specific soaking time can be set according to the production beat. It is easy to understand that when the liquid level sensor 12 detects that the liquid level of deionized water is higher than the preset upper limit liquid level, the abnormal information is fed back and the opening of the switching solenoid valve at the fluid inlet 100 is adjusted through the production computer to close the fluid. Switch the solenoid valve at the inlet 100, increase the opening of the solenoid valve at the fluid outlet 110, so that the liquid level is within the process setting range, and when the liquid level is normal, the opening of the solenoid valve at the fluid inlet 100 and the fluid outlet 110 can be adjusted at the same time , so that the deionized water entering and exiting the process chamber 10 is in a state of dynamic balance.

In one implementation of this example, the temperature of the fluid may be 29.78°C to 35°C, 35°C to 40°C, 40°C to 45°C, 45°C to 50°C, 50°C to 55°C, 55°C to 60°C, 60°C to 65°C, 65°C to 70°C, 70°C to 75°C, 75°C to 80°C, 80°C to 85°C or 85°C to 90°C. The melting point of metal gallium is 29.78°C. Using this characteristic, it can be removed by physical methods, avoiding the corrosion of micro-LED chips and electrodes by hydrochloric acid in the current wet process, and improving the mass transfer yield and the efficiency of micro-LED chips. quality.

In an implementation of this embodiment, in order to prevent the metal gallium remaining on the micro-light-emitting diode chip from undergoing an oxidation reaction during the removal of the metal gallium (the gallium oxide generated by the oxidation reaction cannot be removed by the fluid used) ), an inert atmosphere can be formed in the process chamber 10 by filling the process chamber 10 with an inert gas. Wherein, the inert gas may be an inert gas such as helium, argon, or nitrogen.

In an implementation manner of this embodiment, in order to prevent the metal gallium remaining on the micro-light-emitting diode chip from oxidizing during the process of metal gallium changing from a solid state to a molten state, the present application injects Before the fluid, the method of the present application may also include the steps of:

Judging whether the vacuum degree in the process chamber meets a preset requirement.

Specifically, vacuum pumping may be used to form a certain degree of vacuum in the process chamber 10 . That is, after placing the micro-LED chip with metal gallium remaining on the surface in the device, the process chamber 10 is closed; the vacuum degree of the process chamber 10 is detected, and when the vacuum degree does not meet the preset vacuum When the degree is high, the process chamber 10 is evacuated through the vacuum port 120 until the vacuum degree meets the preset vacuum degree.

Wherein, the vacuum degree of the vacuum is 5Pa to 0.2Pa, setting the vacuum degree within this range can ensure that the micro-LED chip is not oxidized when soaked in the fluid, and does not need to rely on special equipment (keep relatively strict of vacuum).

Based on the above-mentioned device and method for removing gallium metal, the present disclosure also provides a laser lift-off system, as shown in FIG. The temporary storage substrate of the micro-light-emitting diode chip is separated from the growth substrate; wherein, metal gallium remains on some of the micro-light-emitting diode chips; a device 300 for removing metal gallium, the device includes a process chamber 10; the process chamber 10 is filled with a fluid used to remove metal gallium remaining on the surface of the micro-light-emitting diode after laser lift-off; wherein, the fluid has a temperature greater than or equal to the melting point of the metal gallium; and the transfer device 400 is configured to The temporary storage substrate after laser lift-off is transferred into the process chamber 10 .

In this embodiment, the specific structure of the device 300 for removing metal gallium is as described above, and will not be repeated here. The laser stripping device 200 includes a laser source 210 for emitting a laser beam, and the laser source 210 is configured to radiate laser light with a preset wavelength; a laser vibrating mirror 211 arranged on the optical path of the laser source 210, and a control device 220, electrically connected to the laser source 210, configured to shape the laser light emitted by the laser source 210 into a light spot of a predetermined size. Wherein, the light spot may be a linear light spot or a point light spot. As an example, the linear light spot has a length of 50 mm and a width of 0.04 mm, and the point light spot has an area of 600 μm ² to 605 μm ² , 605 μm ² to 610 μm ² , 610 μm ² to 615 μm ² , and 615 μm ² to 620 μm ² .

In a vacuum atmosphere, use the control device 220 to control the laser beam emitted by the laser light source 210 to form a spot-like spot, scan and irradiate the growth substrate through the laser vibrating mirror 211, and make the temporary storage substrate and the growth substrate Substrates are separated.

Exemplarily, the growth substrate is a sapphire growth substrate, the laser light emitted by the laser source 210 is shaped into a ^spot of 615 μm by the control device 220, and when the laser galvanometer 211 is used to scan the side away from the Micro-LED , the laser can pass through the transparent sapphire growth substrate and irradiate one side of the Micro-LED, and part of the GaN at the connection part between the Micro-LED and the sapphire growth substrate is decomposed, so that the Micro-LED can be separated from the sapphire growth substrate. The above-mentioned sapphire growth substrate is peeled off, and the Micro-LED is adhered to the temporary storage substrate by glue. It is easy to understand that the control technology of the laser beam by the control device 220 is an existing conventional technology, and its specific operation and control are not limited here.

In this embodiment, the transfer device 400 may be a manipulator, that is, when the Micro-LED is detached from the sapphire growth substrate (that is, laser lift-off is achieved), the Micro-LED is picked up by the manipulator and transported into the process chamber 10, and then adopt the above-mentioned method steps for removing metal gallium to perform operations to realize the removal of metal gallium.

In an implementation manner of this embodiment, the laser lift-off equipment 200 further includes a lift-off chamber (not shown in the figure), the device for removing gallium metal 300 can be placed inside the lift-off chamber, and can be directly The Micro-LED is placed in the process chamber by means of transfer by a robot, which saves transfer time.

In summary, the present invention provides a metal removal device, method and laser lift-off system, wherein the device includes: a device body, the device body includes a process chamber; There is a fluid used for removing the metal gallium remaining on the surface of the micro-light-emitting diode chip after laser lift-off; wherein, the fluid has a temperature greater than or equal to the melting point of the metal gallium. The device has a simple structure and is easy to operate, and realizes the removal of gallium metal by utilizing the physical principle. The mass transfer yield rate and chip quality are improved. At the same time, it can be used for mass production.

It should be understood that the application of the present invention is not limited to the above examples, and those skilled in the art can make improvements or transformations according to the above descriptions, and all these improvements and transformations should belong to the protection scope of the appended claims of the present invention.

Claims (8)

1. A device for removing gallium metal, characterized in that, comprising: a device body, the device body including a process chamber; The process chamber is filled with a fluid for removing metal gallium remaining on the surface of the micro-light-emitting diode chip after laser lift-off; Wherein, the fluid has a temperature greater than or equal to the melting point of the gallium metal; It also includes a sensor arranged in the process chamber for detecting process parameters in the process chamber; The sensor includes a temperature sensor and a vacuum sensor; the temperature sensor is used to detect the temperature of the fluid in the process chamber; the vacuum sensor is used to detect the vacuum in the process chamber; The process chamber includes a fluid inlet and a fluid outlet; Both the fluid inlet and the fluid outlet are provided with a temperature detector for detecting the temperature of the fluid and a flow detector for detecting the flow of the fluid. 2. The apparatus according to claim 1, wherein the sensor comprises a liquid level sensor; and the liquid level sensor is used to detect the liquid level of the fluid in the process chamber. 3. The device according to claim 1, wherein valves for controlling fluid flow are provided at the fluid inlet and the fluid outlet. 4. The device according to any one of claims 1-3, wherein a pumping port for vacuuming is provided on the top of the process chamber, and the pumping port is connected to a vacuum pump through a vacuuming pipeline. 5. A method for removing gallium metal, characterized in that, based on a device for removing gallium metal, the device includes a process chamber; the method comprises: Provide a temporary storage substrate after laser peeling; wherein, a number of micro light emitting diode chips are adhered to the temporary storage substrate; transferring the temporary storage substrate into the process chamber; and Passing a certain amount of fluid into the process chamber to remove the metal gallium remaining on the surface of the micro light emitting diode chip; Wherein, the fluid has a temperature greater than or equal to the melting point of the gallium metal; Filling the process chamber with inert gas to prevent oxidation reaction of gallium metal remaining on the micro light emitting diode chip. 6. method as claimed in claim 5, is characterized in that, described process chamber comprises a fluid inlet and fluid outlet; Described in described process chamber, pass into fluid, to remove described micro light-emitting diode chip surface residue The gallium metal steps include: closing the fluid outlet, and passing fluid into the process chamber through the fluid inlet; During the process of feeding the fluid, the liquid level and temperature of the fluid in the process chamber are detected in real time; In response to detecting that the liquid level and temperature of the fluid in the process chamber reach preset parameters, the fluid outlet is opened, so that the fluid carrying gallium metal flows out from the fluid outlet. 7. The method according to claim 5, further comprising: before introducing fluid into the process chamber: Judging whether the vacuum degree in the process chamber meets a preset requirement. 8. The method according to any one of claims 5-7, wherein the fluid is a fluid that does not react with the micro light emitting diode chip.

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