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CN112987512A - Six-degree-of-freedom micro-motion device and electron beam equipment - Google Patents

Six-degree-of-freedom micro-motion device and electron beam equipment Download PDF

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Publication number
CN112987512A
CN112987512A CN202110255245.9A CN202110255245A CN112987512A CN 112987512 A CN112987512 A CN 112987512A CN 202110255245 A CN202110255245 A CN 202110255245A CN 112987512 A CN112987512 A CN 112987512A
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China
Prior art keywords
permanent magnet
voice coil
plate
motor
silicon wafer
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Granted
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CN202110255245.9A
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CN112987512B (en
Inventor
胡兵
江旭初
蒋赟
汤成燕
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Shanghai Yinguan Semiconductor Technology Co Ltd
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Shanghai Yinguan Semiconductor Technology Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70758Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073Shielding materials
    • H05K9/0075Magnetic shielding materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Linear Motors (AREA)

Abstract

The invention relates to the technical field of integrated circuit equipment manufacturing, and discloses a six-degree-of-freedom micro-motion device and an electron beam equipment. The six-degree-of-freedom micro-motion device comprises a silicon wafer bearing table, a motion assembly, a fixing assembly and a driving assembly, wherein the motion assembly comprises a motion plate, an upper magnetic shielding structure and a rotor connecting block which are sequentially arranged from top to bottom; the fixing component comprises a connecting plate, a lower magnetic shielding structure and a fixing plate which are arranged in sequence from top to bottom; the driving assembly is arranged in an area defined by the upper magnetic shielding structure and the lower magnetic shielding structure, the driving assembly comprises at least two groups of X-direction voice coil motors, at least two groups of Y-direction voice coil motors and at least three groups of Z-direction voice coil motors, and the moving part of each voice coil motor is connected with the rotor connecting block; each voice coil motor adopts a double-coil type flat voice coil motor. The electron beam equipment comprises the six-degree-of-freedom micro-motion device. The invention can provide six-degree-of-freedom precision motion for the silicon chip, and can reduce the magnetic leakage of the motor, and the magnetic leakage on the surface of the silicon chip can reach nT magnitude.

Description

Six-degree-of-freedom micro-motion device and electron beam equipment
Technical Field
The invention relates to the technical field of integrated circuit equipment manufacturing, in particular to a six-degree-of-freedom micro-motion device and an electron beam equipment.
Background
In high-end equipment of semiconductors, such as electron beam equipment, a coarse-fine double-layer motion structure is widely applied, so that an ultra-precise motion platform is formed, wherein the positioning precision of a nano-scale six-degree-of-freedom fine motion platform determines the exposure precision of the electron beam equipment, and the operating speed determines the production efficiency. In next generation vacuum semiconductor equipment, such as the field of electron beam lithography or wafer detection, the requirement for ultra-precise motion is greatly improved, the motion table is required to have nanometer motion positioning precision, and the requirements of high vacuum, low magnetic leakage, low heat generation and the like are also required to be considered.
A nanometer-scale micro-motion platform with six degrees of freedom is one of core components in an ultra-precise motion platform, and provides a precise positioning function for wafer motion. In electron beam equipment, the electron beam is very sensitive to the magnetic field, since any change in the current of the magnetic field can affect the position of the charged particle beam. In addition, the problem of motor heating in a high vacuum environment can also cause fatal impact on equipment.
Patent WO2011074962 relates to an electronic particle system with support and positioning, and describes a support and positioning structure in a charged particle system and a positioning method in a motion system, and mainly describes a magnetic shielding method of a motor, a magnetic shielding method of a whole motion table and a spring structure adopted between a moving stator and a stator to compensate the gravity of a load and reduce the heating of the motor. The patent focuses on magnetic shielding means, protection methods and the like of a micro motion stage in a charged particle system, and does not describe a specific embodiment of a six-degree-of-freedom motion plate.
Patent CN102880009A describes a six-degree-of-freedom micro-motion workbench for electron beam equipment, which comprises a first electromagnetic force driving module and a second electromagnetic force driving module, wherein the two driving modules all adopt 4 groups, the 4 groups of second electromagnetic force driving modules and the 4 groups of first electromagnetic force driving modules are arranged alternately, the first electromagnetic force driving module mainly comprises a flat voice coil motor, and the second electromagnetic force driving module mainly comprises a cylindrical voice coil motor. The embodiment of this patent can be used in semiconductor equipment, but does not take into account the effects of leakage flux, which is very severe especially in the cylindrical voice coil motor used in this solution.
In view of the above, a new six-degree-of-freedom micro-motion device and electron beam apparatus are needed to solve the above problems.
Disclosure of Invention
Based on the above, the invention aims to provide a six-degree-of-freedom micro-motion device and an electron beam device, which can provide six-degree-of-freedom precise motion for a silicon wafer, reduce the leakage flux of a motor and enable the leakage flux at the surface position of the silicon wafer to reach nT magnitude.
In order to achieve the purpose, the invention adopts the following technical scheme:
a six-degree-of-freedom micro-motion device comprises a silicon wafer bearing table, a motion assembly, a fixing assembly and a driving assembly, wherein the silicon wafer bearing table is used for bearing a silicon wafer; the motion assembly comprises a motion plate, an upper magnetic shielding structure and a rotor connecting block which are sequentially arranged from top to bottom, the motion plate is positioned below the silicon wafer bearing table, and the motion plate and the rotor connecting block fix the upper magnetic shielding structure from the upper direction and the lower direction respectively; the fixed assembly comprises a connecting plate, a lower magnetic shielding structure and a fixed plate which are sequentially arranged from top to bottom, the connecting plate is positioned below the moving assembly, and the connecting plate and the fixed plate fix the lower magnetic shielding structure from the upper direction and the lower direction respectively; the driving assembly is arranged in an area defined by the upper magnetic shielding structure and the lower magnetic shielding structure, the driving assembly comprises at least two groups of X-direction voice coil motors, at least two groups of Y-direction voice coil motors and at least three groups of Z-direction voice coil motors which are circumferentially arranged on the periphery of the connecting plate, the X-direction voice coil motors, the Y-direction voice coil motors and the Z-direction voice coil motors are all provided with fixing parts and moving parts which can move relatively, the fixing parts are connected with the connecting plate, and the moving parts are connected with the rotor connecting block; the X-direction voice coil motor, the Y-direction voice coil motor and the Z-direction voice coil motor are double-coil flat voice coil motors.
As a preferable scheme of the six-degree-of-freedom micro-motion device, the upper magnetic shielding structure comprises a first shielding plate and at least one layer of second shielding plate, the first shielding plate is arranged along the horizontal direction, and the second shielding plate vertically extends downwards from the periphery of the first shielding plate;
the lower magnetic shielding structure comprises a third shielding plate and at least one layer of fourth shielding plate, the third shielding plate is arranged along the horizontal direction, and the fourth shielding plate extends vertically upwards from the periphery of the third shielding plate;
the second shielding plate of the upper magnetic shielding structure and the fourth shielding plate of the lower magnetic shielding structure are arranged in a staggered and overlapped mode, and movement gaps are reserved between the second shielding plate and the fourth shielding plate and are not in contact with each other.
As a preferable scheme of the six-degree-of-freedom micro-motion device, the motion gap between the second shielding plate and the fourth shielding plate is 0.5 mm-2 mm.
As a preferable scheme of the six-degree-of-freedom micro-motion device, the thicknesses of the second shielding plate and the fourth shielding plate are both 0.5 mm-2 mm.
As a preferred scheme of the six-degree-of-freedom micro-motion device, the motion plate, the rotor connecting block and the connecting plate are made of high-conductivity materials; the upper magnetic shielding structure and the lower magnetic shielding structure are both made of high-magnetic-permeability materials.
As a preferred scheme of the six-degree-of-freedom micro-motion device, the connecting plate is a rectangular plate, the driving assembly comprises two sets of X-direction voice coil motors, two sets of Y-direction voice coil motors and four sets of Z-direction voice coil motors, the two sets of X-direction voice coil motors are arranged at positions close to the middle of two X-direction edges of the connecting plate, the two sets of Y-direction voice coil motors are arranged at positions close to the middle of two Y-direction edges of the connecting plate, and the four sets of Z-direction voice coil motors are arranged at four corners of the connecting plate.
As a preferable scheme of the six-degree-of-freedom micro-motion device, the X-direction voice coil motor, the Y-direction voice coil motor and the Z-direction voice coil motor each include:
the motor magnetic shielding structures are arranged on a plurality of layers, and gaps are formed among the motor magnetic shielding structures on each layer;
the motor back irons are arranged in parallel at intervals, and are connected in the motor magnetic shielding structure of the inner layer;
the magnetic assembly is connected in the two layers of motor back iron, the magnetic assembly comprises two groups of halbach arrays which are oppositely arranged at intervals and are parallel to each other, the two groups of halbach arrays are respectively arranged on the two layers of motor back iron, one group of halbach arrays comprises a first main permanent magnet, a first attached permanent magnet, a second main permanent magnet, a second attached permanent magnet and a first main permanent magnet which are sequentially arranged, the other group of halbach arrays comprises a first main permanent magnet, a second attached permanent magnet, a second main permanent magnet, a first attached permanent magnet and a first main permanent magnet which are sequentially arranged, and the width of the second main permanent magnet is greater than that of the first main permanent magnet; in the two groups of halbach arrays, the first main permanent magnet, the second main permanent magnet and the first main permanent magnet which are sequentially arranged in one group of halbach arrays respectively correspond to the first main permanent magnet, the second main permanent magnet and the first main permanent magnet which are sequentially arranged in the other group of halbach arrays one by one;
the magnetic steel connecting block is arranged at the end part of the magnet assembly and is connected with two layers of motor back iron;
the coil assembly comprises a rotor support frame arranged between two groups of halbach arrays, and a first coil and a second coil which are arranged on the rotor support frame, wherein the first coil and the second coil are both in runway-shaped structures, the current directions of the first coil at two sides of a runway are opposite, the current directions of the second coil at two sides of the runway are opposite, and the current directions of the whole first coil and the whole second coil are opposite;
one of the magnet assembly and the coil assembly is the fixed portion, and the other is the moving portion.
As a preferable scheme of the six-degree-of-freedom micro-motion device, the part of the first coil, which is positioned on one side of the runway, corresponds to the position and the size of the first main permanent magnet at one end of the halbach array; the part of the first coil, which is positioned at the other side of the runway, and the part of the second coil, which is positioned at one side of the runway, are adjacent coil sides, have the same current direction, and correspond to the position and the size of the second main permanent magnet; the part of the second coil, which is positioned on the other side of the runway, corresponds to the position and the size of the first main permanent magnet at the other end of the halbach array.
As a preferred scheme of the six-degree-of-freedom micro-motion device, the Z-direction voice coil motor further comprises a magnetic levitation compensation unit arranged on the rotor support frame, the magnetic levitation compensation unit comprises a first compensation permanent magnet and a second compensation permanent magnet, the magnetizing directions of the first compensation permanent magnet and the second compensation permanent magnet are opposite, the first compensation permanent magnet is arranged in the hollow part of the runway of the first coil, the second compensation permanent magnet is arranged in the hollow part of the runway of the second coil, and the first compensation permanent magnet and the second compensation permanent magnet interact with the two groups of halbach arrays of the magnet assembly to form magnetic levitation force along the Z-axis positive direction.
As a preferred scheme of the six-degree-of-freedom micro-motion device, the six-degree-of-freedom micro-motion device further comprises a silicon wafer lifting mechanism, the silicon wafer lifting mechanism is arranged on the connecting plate, the silicon wafer lifting mechanism sequentially penetrates through the rotor connecting block, the upper magnetic shielding structure and the moving plate, part of the silicon wafer lifting mechanism can penetrate out of the silicon wafer bearing table, and the silicon wafer lifting mechanism is used for driving a silicon wafer to move along the Z direction and the Rz direction.
As a preferred scheme of a six-degree-of-freedom micro-motion device, a claw is arranged on the silicon wafer lifting mechanism, a first through hole is formed in the position, corresponding to the claw, of the silicon wafer bearing table, a second through hole is formed in the position, corresponding to the claw, of the motion plate, a third through hole is formed in the position, corresponding to the claw, of the upper magnetic shielding structure, and a cavity is formed in the middle area of the rotor connecting block; the jack catch can pass in proper order the cavity of active cell connecting block the third through-hole of last magnetism shielding structure the second through-hole of motion board and the first through-hole of silicon chip plummer, just first through-hole the second through-hole with the radial dimension of third through-hole all is greater than corresponding the radial dimension of jack catch.
As a preferred scheme of a six-degree-of-freedom micro-motion device, the silicon wafer lifting mechanism comprises a support frame, a plurality of extension arms are uniformly distributed on the support frame along the circumferential direction, and the end part of each extension arm is provided with one clamping jaw; the first through hole is a circular through hole and is used for being matched with the cylindrical clamping jaw; the second through-hole with the third through-hole is the bar hole, be used for with extension arm looks adaptation, the extension arm can be by corresponding the downthehole passing of bar.
As a preferred scheme of the six-degree-of-freedom micro-motion device, the silicon wafer lifting mechanism is driven by a piezoelectric ceramic motor.
An electron beam apparatus comprising a six degree of freedom micro-motion device as described in any of the previous aspects.
The invention has the beneficial effects that:
according to the silicon wafer carrier table, the silicon wafer carrier table can slightly move along the X direction and the Rz direction through at least two groups of X-direction voice coil motors, the silicon wafer carrier table can slightly move along the Y direction and the Rz direction through at least two groups of Y-direction voice coil motors, and the silicon wafer carrier table can slightly move along the Z direction and the Rx and Ry directions through at least three groups of Z-direction voice coil motors, so that the silicon wafer carrier table can provide six-degree-of-freedom precise movement for the silicon wafer.
Compared with the prior art, the driving assembly of the invention adopts a double-coil type flat voice coil motor, the current directions of two coils of the voice coil motor are opposite, namely, the current direction in one coil is clockwise and the current direction in the other coil is anticlockwise under the same visual angle, so that the current directions in adjacent sections of the two coils can be ensured to be consistent, the directions of electromagnetic fields generated by electrifying the two coils are opposite, and a new magnetic loop is formed through a back iron of the motor, thereby reducing the magnetic leakage of a magnetic field generated by electric excitation, and the specific magnetic leakage can be reduced by more than 20%; meanwhile, the X-direction voice coil motor, the Y-direction voice coil motor and the Z-direction voice coil motor are all arranged around the connecting plate, so that the distance between the motors and the surface of the silicon wafer is increased, and the magnetic flux leakage of each voice coil motor in the central area is reduced; and the opening of each voice coil motor all upwards sets up, can reduce the influence of motor tip magnetic leakage to the silicon chip.
Furthermore, the driving assembly is shielded by matching the upper magnetic shielding structure and the lower magnetic shielding structure, so that the magnetic leakage of each voice coil motor is effectively reduced, and a magnetic field generated by electrifying a motor coil is prevented from penetrating through the moving assembly to reach the surface of the silicon wafer. The arrangement ensures that the magnetic leakage on the surface of the silicon wafer can reach nT magnitude.
Drawings
FIG. 1 is a schematic structural diagram of a six-degree-of-freedom micro-motion device provided by an embodiment of the present invention;
FIG. 2 is an exploded view of a six degree-of-freedom micro-motion device provided by an embodiment of the present invention;
FIG. 3 is a cross-sectional view of a six-degree-of-freedom micro-motion device along the XZ cross-section provided by an embodiment of the invention;
fig. 4 is a schematic diagram of the layout and the output direction of each voice coil motor according to the embodiment of the present invention;
fig. 5 is an XY sectional structural cross-sectional view of an X-direction voice coil motor according to an embodiment of the present invention;
fig. 6 is a cross-sectional view of the XY cross-sectional structure of the electromagnetic force driving magnetic circuit of the X-direction voice coil motor according to the embodiment of the present invention;
fig. 7 is a cross-sectional view showing an XZ sectional structure of a Z-direction voice coil motor according to an embodiment of the present invention;
fig. 8 is a cross-sectional structural cross-sectional view of an electromagnetic force driving magnetic circuit XZ of a Z-direction voice coil motor according to an embodiment of the present invention;
FIG. 9 is a leakage cloud diagram of a six-degree-of-freedom micro-motion device provided by an embodiment of the present invention;
fig. 10 is a magnetic flux leakage comparison diagram of a dual coil type flat plate voice coil motor according to an embodiment of the present invention and a conventional voice coil motor;
FIG. 11 is a graph of gravity compensation for a six degree-of-freedom micro-motion device provided by an embodiment of the present invention.
In the figure:
10-a silicon wafer bearing table; 101-a first via;
20-a motion assembly; 201-sports board; 2011-second via; 202-a magnetically shielded structure; 2021-third via; 202 a-a first shield plate; 202 b-a second shield plate; 203-rotor connecting block;
30-a stationary component; 301-connecting plate; 302-lower magnetic shield structure; 302 a-a third shield plate; 302 b-a fourth shield plate; 303-a fixed plate;
40-a silicon wafer lifting mechanism; 401-jaws; 402-an extension arm;
50-a drive assembly; a 51-X direction voice coil motor; a 52-Y direction voice coil motor; a 53-Z voice coil motor; 501-motor magnetic shielding structure; 502-motor back iron; 503 a-a first primary permanent magnet; 503 b-a first permanent magnet; 503c — a second primary permanent magnet; 503 d-a second permanent magnet; 504-magnetic steel connecting block; 505 a-active cell support frame; 505 b-a first coil; 505 c-a second coil; 505 d-a first compensating permanent magnet; 505 e-a second compensating permanent magnet; 506-connecting element.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
In the description of the present invention, unless expressly stated or limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, e.g., as meaning permanently connected, removably connected, or integral to one another; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description of the present embodiment, the terms "upper", "lower", "left", "right", and the like are used based on the orientations and positional relationships shown in the drawings only for convenience of description and simplification of operation, and do not indicate or imply that the referred device or element must have a specific orientation, be configured and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used only for descriptive purposes and are not intended to have a special meaning.
Fig. 1 is a schematic structural diagram of a six-degree-of-freedom micro-motion device provided by an embodiment of the invention, and fig. 2 is an exploded view of the six-degree-of-freedom micro-motion device provided by the embodiment of the invention. As shown in fig. 1-2, the present embodiment provides a six-degree-of-freedom micro-motion device, which includes a silicon wafer carrying stage 10, a moving assembly 20, a fixing assembly 30, a silicon wafer lifting mechanism 40, and a driving assembly 50. The silicon wafer bearing table 10 is used for bearing a silicon wafer to be processed or to be detected, has the functions of positioning and adsorbing the silicon wafer, and can drive the silicon wafer to move synchronously.
The moving assembly 20 comprises a moving plate 201, an upper magnetic shielding structure 202 and a mover connecting block 203 which are arranged in sequence from top to bottom. The moving plate 201 is located below the silicon wafer bearing table 10, the moving plate 201 and the mover connecting block 203 fix the upper magnetic shielding structure 202 from the upper direction and the lower direction respectively, and the mover connecting block 203 is used for connecting the moving parts of all the voice coil motors of the micro-motion device together so as to transfer the six-degree-of-freedom motion of the motors to the moving plate 201, wherein the moving parts of the motors can be motor coils or motor magnetic steel assemblies. The driving component 50 can drive the motion component 20 to move, and the motion plate 201 of the motion component 20 is fixedly connected with the silicon wafer bearing table 10, so that the motion plate 201 can drive the silicon wafer bearing table 10 to move synchronously, that is to say, the motion plate 201 is a structure of a six-degree-of-freedom micro-motion device outputting displacement outwards. The fixing assembly 30 includes a connecting plate 301, a lower magnetic shielding structure 302 and a fixing plate 303 sequentially arranged from top to bottom. The connecting plate 301 is located below the moving assembly 20, and the connecting plate 301 and the fixing plate 303 fix the lower magnetic shield structure 302 from both upper and lower directions, respectively. In this embodiment, because the structure of the upper magnetic shielding structure 202 and the lower magnetic shielding structure 302 is very thin, there is certain difficulty in installation, therefore this embodiment accurately fixes the upper magnetic shielding structure 202 from the upper and lower two directions respectively through the moving plate 201 and the rotor connecting block 203, accurately fixes the lower magnetic shielding structure 302 from the upper and lower two directions respectively through the connecting plate 301 and the fixed plate 303, this setting ensures the clearance between the upper magnetic shielding structure 202 and the lower magnetic shielding structure 302, thereby ensuring that the upper magnetic shielding structure 202 and the lower magnetic shielding structure 302 do not contact each other in the moving process of the micro-motion device. Further, in this embodiment, the moving plate 201, the mover connecting block 203, and the connecting plate 301 are preferably made of aluminum alloy materials with high conductivity and light weight, and the high conductivity can shield the alternating magnetic field generated by the electric field, so as to prevent the magnetic field generated by the motor coil passing through the moving assembly 20 and reaching the surface of the silicon wafer. Meanwhile, the upper magnetic shielding structure 202 and the lower magnetic shielding structure 302 both adopt high-magnetic-permeability materials so as to improve the magnetic shielding effect.
The driving assembly 50 is disposed in an area enclosed by the upper magnetic shielding structure 202 and the lower magnetic shielding structure 302, that is, the upper magnetic shielding structure 202 and the lower magnetic shielding structure 302 both contain the driving assembly 50 therein, so as to form an integral shielding structure. As shown in fig. 4, defining the XYZ coordinate origin at the bottom center of the six-degree-of-freedom micro-motion device, the driving assembly 50 includes at least two sets of X-direction voice coil motors 51, at least two sets of Y-direction voice coil motors 52 and at least three sets of Z-direction voice coil motors 53 circumferentially disposed around the connecting plate 301, wherein the at least two sets of X-direction voice coil motors 51 are preferably symmetrically disposed about the X axis, the at least two sets of Y-direction voice coil motors 52 are preferably symmetrically disposed about the Y axis, and two sets of the at least three sets of Z-direction voice coil motors 53 are symmetrically disposed about the X axis, wherein the two sets are symmetrical about the Y axis. Preferably, the driving assembly 50 according to the embodiment of the present invention includes two sets of X-direction voice coil motors 51 symmetrically disposed about the X-axis, two sets of Y-direction voice coil motors 52 symmetrically disposed about the Y-axis, and four sets of Z-direction voice coil motors 53 respectively and simultaneously symmetric about the X-axis and the Y-axis. Each of the X-direction voice coil motor 51, the Y-direction voice coil motor 52, and the Z-direction voice coil motor 53 of the present embodiment is provided with a fixed portion and a moving portion capable of relative movement, wherein the fixed portion is connected to the connecting plate 301, and the moving portion is connected to the mover connecting block 203, so as to transmit the six-degree-of-freedom movement of the voice coil motor to the moving plate 201. In this embodiment, each of the X-direction voice coil motor 51, the Y-direction voice coil motor 52, and the Z-direction voice coil motor 53 is a dual-coil flat voice coil motor, and an opening of each voice coil motor is disposed upward (i.e., in a positive direction of the Z axis).
In the embodiment of the invention, the silicon wafer bearing table 10 slightly moves along the X direction and the Rz direction through at least two groups of X-direction voice coil motors 51, the silicon wafer bearing table 10 slightly moves along the Y direction and the Rz direction through at least two groups of Y-direction voice coil motors 52, and the silicon wafer bearing table slightly moves along the Z direction and the Rx and Ry directions through at least three groups of Z-direction voice coil motors 53, so that the precise movement with six degrees of freedom can be provided for the silicon wafer. Compared with the prior art, the driving assembly 50 of the embodiment of the invention adopts a dual-coil flat voice coil motor, the current directions of two coils of the voice coil motor are opposite, namely, the current direction in one coil is clockwise and the current direction in the other coil is counterclockwise under the same visual angle, so that the current directions in adjacent sections of the two coils can be ensured to be consistent, the directions of electromagnetic fields generated by electrifying the two coils are opposite, and a new magnetic loop is formed through a motor back iron, thereby reducing the magnetic leakage of a magnetic field generated by electric excitation, and the specific magnetic leakage can be reduced by more than 20%; meanwhile, the X-direction voice coil motor 51, the Y-direction voice coil motor 52 and the Z-direction voice coil motor 53 are all arranged on the periphery of the connecting plate 301 along the circumferential direction, so that the distances between the X-direction voice coil motor 51, the Y-direction voice coil motor 52 and the Z-direction voice coil motor 53 and the surface of a silicon wafer are increased, and the magnetic leakage of the X-direction voice coil motor 51, the Y-direction voice coil motor 52 and the Z-direction voice coil motor 53 in the central area is reduced; and the openings of the X-direction voice coil motor 51, the Y-direction voice coil motor 52 and the Z-direction voice coil motor 53 are all arranged upwards, so that the influence of the end leakage flux of the voice coil motors on the silicon wafer can be reduced. Further, in the embodiment of the present invention, the upper magnetic shielding structure 202 and the lower magnetic shielding structure 302 are matched to shield the driving assembly 50, so that magnetic leakage of the respective X-direction voice coil motor 51, Y-direction voice coil motor 52 and Z-direction voice coil motor 53 is effectively reduced, and a magnetic field generated by energizing the motor coils is prevented from passing through the moving assembly 20 to reach the surface of the silicon wafer. Through the arrangement, the magnetic leakage on the surface of the silicon wafer can reach nT magnitude.
Fig. 3 is a cross-sectional view of a six-degree-of-freedom micro-motion device provided by an embodiment of the invention along the XZ section. As shown in fig. 3, the present embodiment optionally includes a top magnetic shield structure 202 including a first shield plate 202a and two spaced-apart layers of second shield plates 202b, the first shield plate 202a being disposed in a horizontal direction, and the second shield plate 202b extending vertically downward from the outer periphery of the first shield plate 202 a. In this embodiment, the second shielding plate 202b is a thin-walled structure, and the thickness is about 0.5mm to 2 mm; the two second shield plates 202b are horizontally spaced apart from each other by a distance with a gap for the penetration of the lower magnetic shield structure 302. Similarly, the lower magnetic shield structure 302 includes a third shield plate 302a and two spaced-apart layers of fourth shield plates 302b, the third shield plate 302a being disposed in the horizontal direction, the fourth shield plates 302b extending vertically upward from the outer periphery of the third shield plate 302 a. The fourth shielding plate 302b in this embodiment is also a thin-walled structure, and the thickness is about 0.5mm to 2mm, and two layers of the fourth shielding plates 302b are horizontally spaced from each other by a certain distance, and the gap between the layers is used for the upper magnetic shielding structure 202 to extend into. During assembly, the second shielding plate 202b of the upper magnetic shielding structure 202 and the fourth shielding plate 302b of the lower magnetic shielding structure 302 are overlapped in a staggered manner, and a certain movement gap is reserved between the second shielding plate 202b and the fourth shielding plate 302b, so that the influence on movement and positioning accuracy caused by mutual contact of the upper magnetic shielding structure 202 and the lower magnetic shielding structure 302 in the movement process of the micro-motion device is avoided. Preferably, the movement gap is 0.5mm to 2 mm. Of course, the number of the second shielding plate 202b and the fourth shielding plate 302b may be one layer, three layers, four layers, or even more layers in other embodiments, and is not limited to the embodiment. It should be noted that the six-degree-of-freedom micro-motion device of the present embodiment operates in a high vacuum environment, so that the interference of air and dust can be isolated, and the motion gap will not be blocked by the dust particles.
Fig. 4 is a schematic diagram of the layout and the output direction of each voice coil motor according to the embodiment of the present invention. As shown in fig. 4, in this embodiment, optionally, the connecting plate 301 is a rectangular plate, the driving assembly 50 includes two sets of X-direction voice coil motors 51 arranged at intervals, two sets of Y-direction voice coil motors 52 arranged at intervals, and four sets of Z-direction voice coil motors 53, the two sets of X-direction voice coil motors 51 are respectively disposed near the middle of two X-direction edges of the connecting plate 301, and the flat plate structure of the X-direction voice coil motors 51 is parallel to the X axis; the two groups of Y-direction voice coil motors 52 are respectively arranged at the positions close to the middles of the two Y-direction edges of the connecting plate 301, and the flat plate structures of the Y-direction voice coil motors 52 are parallel to the Y axis; four sets of Z-direction voice coil motors 53 are respectively arranged at four corners close to the connecting plate 301, and the flat plate structures of the four sets of Z-direction voice coil motors 53 can be parallel to the X-axis or all parallel to the Y-axis; preferably, the flat plate structures of the four sets of Z-direction voice coil motors 53 are all arranged parallel to the Y-axis. The micro-motion device works based on the lorentz principle, and when two X-direction voice coil motors 51 are electrified to generate lorentz forces Fx in the same direction, the micro-motion device can realize motion along the X direction. When both Y-direction voice coil motors 52 are energized to produce lorentz forces Fy in the same direction, the micro-motion device is able to effect motion in the Y-direction. When the four Z-direction voice coil motors 53 are energized to generate lorentz forces Fz in the same direction, the micro-motion device can realize the motion in the Z direction. When the two Z-direction voice coil motors 53 located in the positive Y-axis position and the two Z-direction voice coil motors 53 located in the negative Y-axis position in fig. 4 are energized to generate lorentz forces Fz in opposite directions, the micro-motion device can achieve movement in the Rx direction (i.e., rotation about the X axis). When the two Z-direction voice coil motors 53 located at the positive X-axis position and the two Z-direction voice coil motors 53 located at the negative X-axis position in fig. 4 are energized to generate lorentz forces Fz in opposite directions, the micro-motion device can realize the motion in the Ry direction (i.e., the rotation around the Y axis). When two X-direction voice coil motors 51 are electrified to generate lorentz forces Fx in opposite directions or when two Y-direction voice coil motors 52 are electrified to generate lorentz forces Fy in opposite directions, the micro-motion device can realize motion in the Rz direction (namely, rotation around the Z axis), and therefore, the micro-motion device of the embodiment realizes accurate motion in the six-degree-of-freedom direction. Of course, in other embodiments, the Z-direction voice coil motor 53 may be provided in three, five or even more sets. For example, when the Z-direction voice coil motors 53 are arranged in three sets, any one of the four sets of Z-direction voice coil motors 53 in fig. 4 can be removed, and the remaining three sets of Z-direction voice coil motors 53 can also realize six-degree-of-freedom motion of the fine motion device, for example, when two sets of Z-direction voice coil motors 53 symmetrical about the X axis are energized to generate lorentz forces Fz in opposite directions, the fine motion device can rotate around the X axis; when two sets of Z-direction voice coil motors 53 symmetrical about the Y axis are energized to generate Lorentz forces Fz in opposite directions, the micro-motion device can rotate about the Y axis direction. Of course, when the Z-direction voice coil motors 53 are arranged in three groups, other arrangement forms are possible, and this embodiment is not limited as long as the fine motion device realizes precise motion in the six-degree-of-freedom direction.
Fig. 5 is a cross-sectional view of an XY cross-sectional structure of the X-direction voice coil motor 51 according to an embodiment of the present invention, and as shown in fig. 5, the X-direction voice coil motor 51 of this embodiment includes at least one layer of a motor magnetic shielding structure 501, a motor back iron 502, a magnet assembly, a magnetic steel connecting block 504, and a coil assembly, where the motor magnetic shielding structure 501 is disposed around an outer periphery and surrounds the motor back iron 502, the magnet assembly, the magnetic steel connecting block 504, and the coil assembly. In this embodiment, the motor magnetic shielding structure 501 may be provided as a single layer or multiple layers; if the motor magnetic shielding structures 501 are arranged in multiple layers, certain gaps are formed among the motor magnetic shielding structures 501 of the layers, and the magnetic shielding effect can be greatly improved by arranging the multiple layers of motor magnetic shielding structures 501; in consideration of cost and feasibility, the present embodiment preferably provides two layers of motor magnetic shielding structures 501 outside each motor. The material of the motor magnetic shielding structure 501 is preferably a high magnetic permeability material, more preferably a permalloy material or a high magnetic permeability alloy material. With reference to fig. 5, two layers of motor back irons 502 are disposed in parallel and opposite to each other at intervals in the X-direction voice coil motor 51 of the present embodiment, and the two layers of motor back irons 502 are respectively connected to the inner layer of the motor magnetic shielding structure 501 through a connecting member 506. Motor back iron 502 is the first heavy shielding structure of motor magnetic leakage, and in order to reduce the magnetic leakage of the motor permanent magnet, motor back iron 502 is thicker, and should be more than 2 times of motor permanent magnet thickness at least. Through the above arrangement, the micro-motion device of the present embodiment forms a triple magnetic shielding structure, that is: first heavy magnetic protection structure is motor back iron 502, and second heavy magnetic protection structure is motor magnetic shielding structure 501 that the motor itself set up, and third heavy magnetic protection structure is for setting up in the outside magnetic shielding structure 202 and the lower magnetic shielding structure 302 of whole drive assembly 50 to this micro-motion device's magnetic shielding effect has been improved greatly, and its magnetic leakage can reach the nT order of magnitude.
In this embodiment, one of the magnet assembly and the coil assembly may serve as a fixed portion of the voice coil motor, and the other may serve as a moving portion of the voice coil motor. Preferably, the magnet assembly of this embodiment is a fixed portion of the voice coil motor, the coil assembly is a moving portion of the voice coil motor, that is, the magnet assembly is fixedly connected to the connecting plate 301, and the coil assembly is connected to the mover connecting block 203. The magnet assembly of the embodiment is connected in two layers of motor back iron 502, the magnet assembly comprises two groups of halbach arrays (halbach arrays) which are oppositely arranged along the Y direction at intervals and are parallel to each other, the two groups of halbach arrays are respectively arranged on the two layers of motor back iron 502, wherein one group of halbach arrays comprises a first main permanent magnet 503a, a second auxiliary permanent magnet 503d, a second main permanent magnet 503c, a first auxiliary permanent magnet 503b and a first main permanent magnet 503a which are sequentially arranged along the positive direction of the X axis; the other group of halbach arrays comprises a first main permanent magnet 503a, a first attached permanent magnet 503b, a second main permanent magnet 503c, a second attached permanent magnet 503d and a first main permanent magnet 503a which are sequentially arranged along the positive direction of the X axis. In the two groups of halbach arrays, the width dimension of the second main permanent magnet 503c in the X direction is greater than the width dimension of the first main permanent magnet 503a in the X direction, and the width dimension of the first main permanent magnet 503a in the X direction is greater than the width dimension of the first attached permanent magnet 503b in the X direction, and the width dimension of the second attached permanent magnet 503d in the X direction. Preferably, the width of the second main permanent magnet 503c in the X direction is 2 times the width of the first main permanent magnet 503a in the X direction. The main permanent magnets and the attached permanent magnets are adhered to the motor back iron 502; in the two groups of halbach arrays, the first main permanent magnet 503a, the second main permanent magnet 503c and the first main permanent magnet 503a which are sequentially arranged in one group of halbach array respectively correspond to the first main permanent magnet 503a, the second main permanent magnet 503c and the first main permanent magnet 503a which are sequentially arranged in the other group of halbach array one by one. The halbach array structure adopted by the embodiment can increase the output of the voice coil motor and reduce the magnetic flux leakage of the permanent magnet of the voice coil motor on the motor back iron 502. Further, the magnetic steel connecting blocks 504 of this embodiment are respectively disposed at two ends of the two groups of halbach arrays, and the magnetic steel connecting blocks 504 connect the two layers of motor back iron 502, thereby forming a magnetic field of the X-direction voice coil motor 51. Preferably, the magnetic steel connecting block 504 of this embodiment has a U-shaped cross section.
Fig. 6 is a cross-sectional view of the electromagnetic force driving magnetic circuit XY of the X-direction voice coil motor 51 according to the embodiment of the present invention. With continued reference to fig. 5 and 6, the coil assembly includes a rotor support 505a disposed between the two halbach arrays, and a first coil 505b and a second coil 505c sequentially disposed on the rotor support 505a, where the first coil 505b and the second coil 505c are both disposed on an XZ plane, and in this embodiment, the support 505a, the first coil 505b, and the second coil 505c are preferably integrally encapsulated by epoxy resin to form the entire coil assembly. In this embodiment, optionally, the first coil 505b and the second coil 505c are both racetrack-shaped structures, and are arbitrarily elongated in the Z direction, and when viewed from the XY cross-sectional view of fig. 6, the current directions of the first coil 505b on both sides of the racetrack are opposite, the current directions of the second coil 505c on both sides of the racetrack are opposite, and the current directions of the coils on the same permanent magnet surface are the same, for example: the portion of the first coil 505b on the left side of the racetrack corresponds in position and magnitude to the left first main permanent magnet 503a, with its current direction being in the negative Z-axis direction (i.e., inward, perpendicular to the page); the part of the first coil 505b on the right side of the runway and the part of the second coil 505c on the left side of the runway are adjacent coil sides, the current directions of the adjacent coil sides are along the positive direction of the Z axis (namely, the current directions are outward perpendicular to the paper surface), and the current directions correspond to the position and the size of the second main permanent magnet 503 c; the portion of the second coil 505c to the right of the racetrack corresponds in position and magnitude to the right first main permanent magnet 503a, with the direction of current flow in the negative Z-axis direction (i.e., inward, perpendicular to the page). As shown in fig. 6, in the two halbach arrays, the magnetizing directions of the main permanent magnets which are parallel to each other and are spaced apart from each other are the same, and the magnetizing directions of the auxiliary permanent magnets which are parallel to each other and are spaced apart from each other are opposite, that is, the magnetizing direction of the first main permanent magnet 503a is a positive Y-axis direction, the magnetizing direction of the second main permanent magnet 503c is a negative Y-axis direction, the magnetizing direction of the first auxiliary permanent magnet 503b is a positive X-axis direction, and the magnetizing direction of the second auxiliary permanent magnet 503d is a negative X-axis direction. In this embodiment, the first coil 505b and the second coil 505c can exert force in the same direction under the action of the lorentz force, and in addition, because the current directions of the first coil 505b and the second coil 505c are opposite, the directions of electromagnetic fields generated by electrifying the first coil 505b and the second coil 505c are opposite, a new magnetic loop can be formed through the motor back iron 502, so that the magnetic leakage of the magnetic field generated by electric excitation is reduced.
In this embodiment, the internal structure and the magnetizing direction of the two X-direction voice coil motors 51 arranged in parallel and opposite to each other at an interval are the same, or the internal structure and the magnetizing direction of the two X-direction voice coil motors 51 arranged in parallel and opposite to each other at an interval are the same in a mirror image manner, as long as the X-direction driving force is satisfied. Meanwhile, the structure of the Y-direction voice coil motor 52 is the same as the structure of the X-direction voice coil motor 51, and it is only necessary to adjust the permanent magnets of the halbach arrays of the Y-direction voice coil motor 52 in sequence in the direction along the Y axis, and two of the halbach arrays are oppositely arranged and parallel to each other at intervals along the X direction, so that the Y-direction voice coil motor 52 can apply force along the Y direction, which is not described in detail in this embodiment.
Further, fig. 7 is an XZ sectional structural sectional view of the Z-direction voice coil motor 53 according to the embodiment of the present invention, and fig. 8 is an XZ sectional structural sectional view of an electromagnetic force driving magnetic circuit of the Z-direction voice coil motor 53 according to the embodiment of the present invention. Referring to fig. 7-8, the Z-direction voice coil motor 53 of the present embodiment includes, relative to the X-direction voice coil motor 51, a magnetic levitation compensation unit in addition to a plurality of layers of motor magnetic shielding structures 501, a motor back iron 502, a magnet assembly, a magnetic steel connection block 504, and a coil assembly. Specifically, the magnet assembly of the Z-direction voice coil motor 53 in this embodiment includes two groups of halbach arrays that are oppositely disposed at intervals in the X-direction and are parallel to each other, where one group of halbach arrays includes a first main permanent magnet 503a, a second auxiliary permanent magnet 503d, a second main permanent magnet 503c, a first auxiliary permanent magnet 503b, and a first main permanent magnet 503a that are sequentially disposed in the positive direction of the Z-axis; the other group of halbach arrays comprises a first main permanent magnet 503a, a first attached permanent magnet 503b, a second main permanent magnet 503c, a second attached permanent magnet 503d and a first main permanent magnet 503a which are sequentially arranged along the positive direction of the Z axis. In the two groups of halbach arrays, the width dimension of the second main permanent magnet 503c along the Z direction is greater than the width dimension of the first main permanent magnet 503a along the Z direction, and the width dimension of the first main permanent magnet 503a along the Z direction is greater than the width dimension of the first attached permanent magnet 503b along the Z direction, and the width dimension of the second attached permanent magnet 503d along the Z direction. Preferably, the width of the second main permanent magnet 503c in the Z direction is 2 times the width of the first main permanent magnet 503a in the Z direction. The main permanent magnets and the attached permanent magnets are adhered to the motor back iron 502; in the two groups of halbach arrays, the first main permanent magnet 503a, the second main permanent magnet 503c and the first main permanent magnet 503a which are sequentially arranged in one group of halbach array respectively correspond to the first main permanent magnet 503a, the second main permanent magnet 503c and the first main permanent magnet 503a which are sequentially arranged in the other group of halbach array one by one. The halbach structure adopted in this embodiment can increase the output of voice coil motor, and can reduce the magnetic leakage of the permanent magnet of the voice coil motor on the motor back iron 502. Further, the magnetic steel connecting blocks 504 of this embodiment are disposed at two ends of the two groups of halbach arrays, and the magnetic steel connecting blocks 504 connect the two layers of motor back iron 502, thereby forming a magnetic field of the Z-direction voice coil motor 53. Preferably, the magnetic steel connecting block 504 of this embodiment has a U-shaped cross section.
With continued reference to fig. 7 and 8, the coil assembly of the Z-direction voice coil motor 53 includes a rotor support frame 505a disposed between the two halbach arrays, and a first coil 505b, a second coil 505c, a first compensation permanent magnet 505d, and a second compensation permanent magnet 505e disposed on the rotor support frame 505a, and the above structures are integrally encapsulated by epoxy resin to form the whole coil assembly. In this embodiment, optionally, the first coil 505b and the second coil 505c are both in a racetrack structure, and are arbitrarily elongated in the Y direction, and when viewed from the XZ cross-sectional view of fig. 8, the current directions of the first coil 505b on both sides of the racetrack are opposite, the current directions of the second coil 505c on both sides of the racetrack are opposite, and the current directions of the coils on the same permanent magnet surface are the same, for example: the portion of the first coil 505b on the left side of the racetrack corresponds in position and magnitude to the left first primary permanent magnet 503a, with its current direction in the positive Y-axis direction (i.e., into the plane of the page); the portion of the first coil 505b on the right side of the racetrack and the portion of the second coil 505c on the left side of the racetrack correspond in position and magnitude to the second main permanent magnet 503c, with the current directions both in the negative Y-axis direction (i.e., out of the plane of the page); the portion of the second coil 505c to the right of the racetrack corresponds in position and magnitude to the right first primary permanent magnet 503a, with the direction of current flow in the positive Y-axis direction (i.e., into the plane of the page). As shown in fig. 8, in the two halbach arrays, the magnetizing directions of the main permanent magnets which are parallel to each other and are spaced apart from each other are the same, and the magnetizing directions of the auxiliary permanent magnets which are parallel to each other and are spaced apart from each other are opposite, that is, the magnetizing direction of the first main permanent magnet 503a is the X-axis negative direction, the magnetizing direction of the second main permanent magnet 503c is the X-axis positive direction, the magnetizing direction of the first auxiliary permanent magnet 503b is the Z-axis positive direction, and the magnetizing direction of the second auxiliary permanent magnet 503d is the Z-axis negative direction. The arrangement is such that the first coil 505b and the second coil 505c can exert force in the same direction under the action of lorentz force, and in addition, because the current directions of the first coil 505b and the second coil 505c are opposite, the directions of electromagnetic fields generated by electrifying the first coil 505b and the second coil 505c are opposite, a new magnetic loop can be formed through the motor back iron 502, and therefore the leakage flux of the magnetic field generated by electric excitation is reduced. The first compensation permanent magnet 505d is installed in the hollow portion of the track of the first coil 505b, the second compensation permanent magnet 505e is installed in the hollow portion of the track of the second coil 505c, and the magnetizing directions of the first compensation permanent magnet 505d and the second compensation permanent magnet 505e are opposite, specifically, the magnetizing direction of the first compensation permanent magnet 505d is a negative direction of the X axis, and the magnetizing direction of the second compensation permanent magnet 505e is a positive direction of the X axis. The first compensation permanent magnet 505d and the second compensation permanent magnet 505e interact with the two groups of halbach arrays of the magnet assembly to form magnetic levitation force along the Z-axis positive direction, so that the load weight of the micro-motion device can be compensated.
Fig. 11 is a gravity compensation graph of a six-degree-of-freedom micro-motion device provided in an embodiment of the present invention, in which the abscissa represents the position of the moving component 20 along the Z direction, the zero position represents the position of the moving component 20 in the initial state, and the ordinate represents the magnitude of the gravity compensation force. In the embodiment, each Z-direction voice coil motor 53 adopts a double-magnetic-levitation structure, so that the six-degree-of-freedom micro-motion device and the gravity loaded by more than 95% can be compensated, and the heat generation of each Z-direction voice coil motor 53 is effectively reduced.
In this embodiment, the Z-direction voice coil motor 53, the X-direction voice coil motor 51, and the Y-direction voice coil motor 52 are all on the same horizontal plane, and in order to increase X, Y output to the voice coil motor, the coil group and the corresponding magnetic steel array may be extended along the X direction or the Y direction, thereby increasing motor output. In this embodiment, two sets of coil sets are preferably provided, but in other embodiments, the coil sets may be provided as 4 sets, 6 sets, and the like, and the present embodiment is not limited thereto.
Further, the six-degree-of-freedom micro-motion device of the embodiment further comprises a silicon wafer lifting mechanism 40, the silicon wafer lifting mechanism 40 is installed on the connecting plate 301, the silicon wafer lifting mechanism 40 is preferably driven by a piezoelectric ceramic motor, has a motion function along the Z direction and the Rz direction, and can achieve the functions of rapid up-and-down reciprocating motion of the silicon wafer and small-angle rotation adjustment of the silicon wafer. Specifically, as shown in fig. 2, the silicon wafer lifting mechanism 40 includes a support frame, and the support frame is connected to an output end of the piezoelectric ceramic motor, so that the movement along the Z direction and the Rz direction can be realized under the driving of the piezoelectric ceramic motor; the piezo-ceramic motor may be fixed to the connection plate 301. It should be noted that the movement of the silicon wafer lifting mechanism 40 and the six-degree-of-freedom micromotion of the moving assembly 20 in this embodiment are independent processes, and the operations of the two are not interfered with each other, wherein the silicon wafer lifting mechanism 40 is used for receiving or ejecting a silicon wafer and driving the silicon wafer to realize a small-amplitude movement without affecting the six-degree-of-freedom micromotion of the moving plate 201 and the silicon wafer bearing table 10. Furthermore, three extension arms 402 are uniformly distributed on the support frame along the circumferential direction, and the end parts of the three extension arms 402 are respectively provided with a clamping jaw 401; three first through holes 101 are formed in positions, corresponding to the three clamping jaws 401, on the silicon wafer bearing table 10, three second through holes 2011 are formed in positions, corresponding to the three clamping jaws 401, on the moving plate 201, three third through holes 2021 are formed in positions, corresponding to the three clamping jaws 401, on the upper magnetic shielding structure 202, and a cavity is formed in the middle area of the rotor connecting block 203. Three claws 401 of the support frame can sequentially penetrate through a cavity of the rotor connecting block 203, a third through hole 2021 of the upper magnetic shielding structure 202, a second through hole 2011 of the moving plate 201 and a first through hole 101 of the silicon wafer bearing table 10, and can bear a silicon wafer so as to realize the rapid up-down reciprocating motion of the silicon wafer and place the silicon wafer at a proper position of the silicon wafer bearing table 10; meanwhile, the radial dimensions of the first through hole 101, the second through hole 2011 and the third through hole 2021 of the present embodiment are all greater than the radial dimensions of the corresponding claws 401, so as to realize small-angle rotation of the support frame along the Rz direction. Preferably, the first through hole 101 is a circular through hole for matching with the jaw 401 of a cylindrical structure; the second through hole 2011 and the third through hole 2021 are both bar-shaped holes and are used for being matched with the three extension arms 402, so that the extension arms 402 can pass through the corresponding bar-shaped holes. The specific working principle of this embodiment is as follows: when the silicon wafer to be processed moves above the micro-motion device, the silicon wafer lifting mechanism 40 drives the clamping jaw 401 to move upwards along the Z axis and extend out of the silicon wafer bearing table 10, the silicon wafer to be processed is received by the clamping jaw 401 and the angle of the silicon wafer is adjusted, then the silicon wafer lifting mechanism 40 drives the clamping jaw 401 to move downwards along the Z axis, and therefore the silicon wafer is placed on the silicon wafer bearing table 10; during processing, the driving assembly 50 drives the moving assembly 20 and the silicon wafer bearing table 10 to move synchronously, so that the silicon wafer is driven to realize micro motion with six degrees of freedom; after the processing is finished, the silicon wafer lifting mechanism 40 drives the clamping jaws 401 to move upwards along the Z axis to eject the silicon wafer, and at the moment, the mechanical arm can take out the processed silicon wafer.
Fig. 9 is a leakage magnetic cloud diagram of the six-degree-of-freedom micro-motion device provided by the embodiment of the invention, and it can be seen from fig. 9 that the magnetic field intensity on the whole silicon wafer surface is below 1.66nT, the leakage magnetic flux in the central region is below 0.7nT, and the magnetic field shielding effect is obvious. Fig. 10 is a magnetic flux leakage comparison diagram of the dual-coil flat voice coil motor according to the embodiment of the present invention and the conventional voice coil motor, in which the abscissa represents the distance, the initial zero position is a position 50mm away from the surface of the voice coil motor, and the ordinate represents the magnetic flux leakage. Curve S1 is the magnetic leakage condition of the dull and stereotyped voice coil motor of twin coil formula that this patent provided in the figure, and curve S2 is the magnetic leakage condition of voice coil motor among the prior art, can see from the figure, adopts the dull and stereotyped voice coil motor of twin coil formula of this patent, and the magnetic leakage is obviously less than current voice coil motor structure, can reduce more than about magnetic leakage 20%.
The embodiment also provides an electron beam device which comprises the six-degree-of-freedom micro-motion device, and the electron beam device can provide six-degree-of-freedom precise motion for the silicon wafer, reduce the magnetic leakage of a motor and enable the magnetic leakage of the surface position of the silicon wafer to reach nT magnitude.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (14)

1. A six degree-of-freedom micro-motion device, comprising:
the silicon wafer bearing table (10) is used for bearing a silicon wafer;
the silicon wafer carrying platform comprises a moving assembly (20) and a silicon wafer carrying platform, wherein the moving assembly (20) comprises a moving plate (201), an upper magnetic shielding structure (202) and a rotor connecting block (203) which are sequentially arranged from top to bottom, the moving plate (201) is located below the silicon wafer carrying platform (10), and the moving plate (201) and the rotor connecting block (203) fix the upper magnetic shielding structure (202) from the upper direction and the lower direction respectively;
the fixing assembly (30) comprises a connecting plate (301), a lower magnetic shielding structure (302) and a fixing plate (303) which are sequentially arranged from top to bottom, the connecting plate (301) is positioned below the moving assembly (20), and the connecting plate (301) and the fixing plate (303) are used for fixing the lower magnetic shielding structure (302) from the upper direction and the lower direction respectively;
the driving assembly (50) is arranged in an area surrounded by the upper magnetic shielding structure (202) and the lower magnetic shielding structure (302), the driving assembly (50) comprises at least two groups of X-direction voice coil motors (51), at least two groups of Y-direction voice coil motors (52) and at least three groups of Z-direction voice coil motors (53) which are circumferentially arranged on the periphery of the connecting plate (301), the X-direction voice coil motors (51), the Y-direction voice coil motors (52) and the Z-direction voice coil motors (53) are respectively provided with a fixing part and a moving part which can move relatively, the fixing parts are connected with the connecting plate (301), and the moving parts are connected with the rotor connecting block (203); the X-direction voice coil motor (51), the Y-direction voice coil motor (52) and the Z-direction voice coil motor (53) are double-coil flat voice coil motors.
2. The six-degree-of-freedom micro-motion device according to claim 1, wherein the upper magnetic shielding structure (202) comprises a first shielding plate (202a) and at least one layer of a second shielding plate (202b), the first shielding plate (202a) is arranged along a horizontal direction, and the second shielding plate (202b) vertically extends downwards from the periphery of the first shielding plate (202 a);
the lower magnetic shielding structure (302) comprises a third shielding plate (302a) and at least one layer of a fourth shielding plate (302b), wherein the third shielding plate (302a) is arranged along the horizontal direction, and the fourth shielding plate (302b) extends vertically upwards from the periphery of the third shielding plate (302 a);
the second shielding plate (202b) of the upper magnetic shielding structure (202) and the fourth shielding plate (302b) of the lower magnetic shielding structure (302) are arranged in a staggered and overlapped mode, and a movement gap is reserved between the second shielding plate and the fourth shielding plate, so that the second shielding plate and the fourth shielding plate are not in contact with each other.
3. The six degree-of-freedom micro-motion device according to claim 2, wherein the motion gap between the second shield plate (202b) and the fourth shield plate (302b) is 0.5mm to 2 mm.
4. The six degree-of-freedom micro-motion device according to claim 2, wherein the thickness of the second shield plate (202b) and the fourth shield plate (302b) are both 0.5mm to 2 mm.
5. The six-degree-of-freedom micro-motion device according to claim 1, wherein the motion plate (201), the mover connecting block (203) and the connecting plate (301) are all made of high-conductivity materials; the upper magnetic shielding structure (202) and the lower magnetic shielding structure (302) both adopt high-magnetic-permeability materials.
6. The six-degree-of-freedom micro-motion device according to claim 1, wherein the connecting plate (301) is a rectangular plate, the driving assembly (50) comprises two sets of the X-direction voice coil motors (51), two sets of the Y-direction voice coil motors (52) and four sets of the Z-direction voice coil motors (53), two sets of the X-direction voice coil motors (51) are arranged at positions close to the middle of two X-direction edges of the connecting plate (301), two sets of the Y-direction voice coil motors (52) are arranged at positions close to the middle of two Y-direction edges of the connecting plate (301), and four sets of the Z-direction voice coil motors (53) are arranged at four corners of the connecting plate (301).
7. The six degree-of-freedom micro-motion device according to claim 1, wherein the X-direction voice coil motor (51), the Y-direction voice coil motor (52) and the Z-direction voice coil motor (53) each comprise:
the motor magnetic shielding structure comprises a plurality of layers of motor magnetic shielding structures (501), wherein gaps are formed among the motor magnetic shielding structures (501);
the motor back irons (502) are oppositely arranged at intervals and are arranged in parallel, and the two layers of motor back irons (502) are connected into the motor magnetic shielding structure (501) of the inner layer;
the magnetic assembly is connected in the two layers of motor back iron (502), the magnetic assembly comprises two groups of halbach arrays which are oppositely arranged at intervals and are parallel to each other, the two groups of halbach arrays are respectively arranged on the two layers of motor back iron (502), one group of halbach array comprises a first main permanent magnet (503a), a first attached permanent magnet (503b), a second main permanent magnet (503c), a second attached permanent magnet (503d) and a first main permanent magnet (503a), the other group of halbach array comprises a first main permanent magnet (503a), a second attached permanent magnet (503d), a second main permanent magnet (503c), a first attached permanent magnet (503b) and a first main permanent magnet (503a), and the width of the second main permanent magnet (503c) is larger than that of the first main permanent magnet (503 a); in the two groups of halbach arrays, the first main permanent magnet (503a), the second main permanent magnet (503c) and the first main permanent magnet (503a) which are sequentially arranged in one group of halbach arrays respectively correspond to the first main permanent magnet (503a), the second main permanent magnet (503c) and the first main permanent magnet (503a) which are sequentially arranged in the other group of halbach arrays one by one;
the magnetic steel connecting block (504) is arranged at the end part of the magnet assembly, and the magnetic steel connecting block (504) is connected with two layers of motor back iron (502);
the coil assembly comprises a rotor support frame (505a) arranged between two groups of halbach arrays, and a first coil (505b) and a second coil (505c) arranged on the rotor support frame (505a), wherein the first coil (505b) and the second coil (505c) are both in a runway-type structure, the current directions of the first coil (505b) on two sides of the runway are opposite, the current directions of the second coil (505c) on two sides of the runway are opposite, and the current directions of the whole first coil (505b) and the whole second coil (505c) are opposite;
one of the magnet assembly and the coil assembly is the fixed portion, and the other is the moving portion.
8. The six degree-of-freedom micro-motion device according to claim 7, wherein the portion of the first coil (505b) on one side of its race track corresponds to the position and size of the first main permanent magnet (503a) at one end of the halbach array; the part of the first coil (505b) on the other side of the runway and the part of the second coil (505c) on one side of the runway are adjacent coil sides and have the same current direction, and correspond to the position and the size of the second main permanent magnet (503 c); the part of the second coil (505c) on the other side of the runway corresponds to the position and size of the first main permanent magnet (503a) on the other end of the halbach array.
9. The six-degree-of-freedom micro-motion device according to claim 8, wherein the Z-direction voice coil motor (53) further comprises a magnetic levitation compensation unit arranged on the mover support frame (505a), the magnetic levitation compensation unit comprises a first compensation permanent magnet (505d) and a second compensation permanent magnet (505e), the magnetizing directions of the first compensation permanent magnet (505d) and the second compensation permanent magnet (505e) are opposite, the first compensation permanent magnet (505d) is installed in the track hollow of the first coil (505b), the second compensation permanent magnet (505e) is installed in the hollow of the second coil (505c), the first compensation permanent magnet (505d) and the second compensation permanent magnet (505e) interact with the two groups of halbach arrays of the magnet assembly to form a magnetic levitation force along the Z-axis positive direction.
10. The six-degree-of-freedom micro-motion device according to claim 1, further comprising a silicon wafer lifting mechanism (40), wherein the silicon wafer lifting mechanism (40) is arranged on the connecting plate (301), the silicon wafer lifting mechanism (40) sequentially penetrates through the rotor connecting block (203), the upper magnetic shielding structure (202) and the motion plate (201), part of the silicon wafer lifting mechanism (40) can penetrate through the silicon wafer bearing table (10), and the silicon wafer lifting mechanism (40) is used for driving a silicon wafer to move along the Z direction and the Rz direction.
11. The six-degree-of-freedom micro-motion device according to claim 10, wherein a jaw (401) is arranged on the silicon wafer lifting mechanism (40), a first through hole (101) is arranged on the silicon wafer bearing table (10) at a position corresponding to the jaw (401), a second through hole (2011) is arranged on the moving plate (201) at a position corresponding to the jaw (401), a third through hole (2021) is arranged on the upper magnetic shielding structure (202) at a position corresponding to the jaw (401), and a cavity is arranged in the middle area of the rotor connecting block (203); the jack catch (401) can pass through the cavity of active cell connecting block (203) in proper order the third through-hole (2021) of going up magnetic shield structure (202), second through-hole (2011) of motion board (201) and first through-hole (101) of silicon chip plummer (10), just first through-hole (101), second through-hole (2011) and the radial dimension of third through-hole (2021) all are greater than the correspondence the radial dimension of jack catch (401).
12. The six-degree-of-freedom micro-motion device according to claim 11, wherein the silicon wafer lifting mechanism (40) comprises a support frame, a plurality of extension arms (402) are uniformly distributed along the circumferential direction of the support frame, and the end part of each extension arm (402) is provided with one clamping jaw (401); the first through hole (101) is a circular through hole and is used for being matched with the cylindrical clamping jaw (401); the second through hole (2011) and the third through hole (2021) are strip-shaped holes and are used for being matched with the extension arm (402), and the extension arm (402) can penetrate through the corresponding strip-shaped holes.
13. The six degree-of-freedom micro-motion device according to claim 10, wherein the silicon wafer lifting mechanism (40) is driven by a piezo-ceramic motor.
14. An electron beam apparatus comprising a six degree-of-freedom micro-motion device according to any of claims 1-13.
CN202110255245.9A 2021-03-08 2021-03-08 Six-degree-of-freedom micro-motion device and electron beam equipment Active CN112987512B (en)

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