CN112994647A - Ultrahigh frequency resonator with ring electrode structure - Google Patents
Ultrahigh frequency resonator with ring electrode structure Download PDFInfo
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- CN112994647A CN112994647A CN202110160241.2A CN202110160241A CN112994647A CN 112994647 A CN112994647 A CN 112994647A CN 202110160241 A CN202110160241 A CN 202110160241A CN 112994647 A CN112994647 A CN 112994647A
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- 239000000463 material Substances 0.000 claims abstract description 10
- 230000005284 excitation Effects 0.000 claims abstract description 9
- 235000019687 Lamb Nutrition 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- PILOURHZNVHRME-UHFFFAOYSA-N [Na].[Ba] Chemical compound [Na].[Ba] PILOURHZNVHRME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 7
- 238000010168 coupling process Methods 0.000 abstract description 7
- 238000005859 coupling reaction Methods 0.000 abstract description 7
- 238000004891 communication Methods 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
本发明属于谐振器技术领域，公开了一种环电极结构的超高频谐振器。该谐振器结构包括压电层和环电极，每个环电极以环状围绕在压电层四周，多个环电极沿着压电材料长度方向分布，且施加正负交替的电压激励。该结构能够在压电层中激发横向电场，从而激发横向剪切模式体声波，实现超高谐振频率下的高有效机电耦合系数，满足射频通信领域高频率大带宽的要求。
The invention belongs to the technical field of resonators, and discloses an ultra-high frequency resonator with a ring electrode structure. The resonator structure includes a piezoelectric layer and a ring electrode, each ring electrode surrounds the piezoelectric layer in a ring shape, a plurality of ring electrodes are distributed along the length direction of the piezoelectric material, and positive and negative alternating voltage excitation is applied. The structure can excite a transverse electric field in the piezoelectric layer to excite the transverse shear mode bulk acoustic wave, achieve a high effective electromechanical coupling coefficient at an ultra-high resonant frequency, and meet the requirements of high frequency and large bandwidth in the field of radio frequency communication.
Description
Technical Field
The invention relates to the technical field of resonators, in particular to an ultrahigh frequency resonator with a ring electrode structure.
Background
With the advent of the age of 5G, the demand for multiband high-frequency filters has sharply increased. This puts higher demands on the performance of the piezoelectric resonator. As is known, Surface Acoustic Wave (SAW) resonators were widely used in the rf front end in the early days, but it is difficult to maintain excellent performance in the high frequency band due to their low phase velocity, limitations in photolithography, and the like.
Piezoelectric aluminum nitride MEMS resonators that excite low order symmetric lamb waves of piezoelectric materials using interdigital transducers (IDTs) have been the focus of research for many years. In the AlN thin film, S0The mode has very high phase velocity, which can reach about 10000m/s, and the manufacturing process is simple. The effective electromechanical coupling coefficient K commonly exhibited by a common AlN lamb wave resonator2 effAround 3%, which limits its application in filters, since K2 effThe value is directly related to the partial Bandwidth (BW) of the filter, which determines the insertion loss. Therefore, optimizing the electrodes in a piezoelectric AlN lamb wave resonator is an ideal way to further implement a large bandwidth, low insertion loss filter.
Furthermore, with the advent and application of 5G, it is difficult for existing resonator structures such as LWR, FBAR, and SMR to achieve the requirement of high effective electromechanical coupling coefficient in high frequency band. Recently, a shear mode bulk acoustic resonator (XBAR) with transverse excitation has been proposed. The XBAR is relatively simple in structure, similar to a lamb wave resonator, and includes metallized interdigital electrodes (IDEs), but the small metallization level of the XBAR, i.e., the large inter-electrode spacing, results in the excitation of the electrodes of the XBAR to produce primarily horizontal electric fields, producing a half-wavelength bulk shear wave a1 mode resonance in the piezoelectric material layer.
The structural design of XBAR is very different from that of the conventional micro-acoustic resonator, and the resonant frequency of the surface acoustic wave resonator and the lamb wave resonator is closely related to the electrode spacing of the metal IDT, while in the XBAR, the resonant frequency is mainly determined by the thickness of the piezoelectric layer. Another point that differs from lamb wave resonators is that XBARs use a lithium niobate material (LiNbO3) that is better suited for exciting shear mode bulk acoustic waves.
In the traditional one-dimensional XBAR structure, interdigital electrodes are arranged on the surface of a piezoelectric layer only so as to excite a transverse shear mode bulk acoustic wave along the arrangement direction of the interdigital electrodes; the two-dimensional XBAR structure has a plurality of electrodes arranged in a checkerboard pattern on the surface of the piezoelectric layer, and alternating positive and negative voltages are applied to the electrodes to excite transverse shear mode bulk acoustic waves propagating in two directions in the piezoelectric material.
The effective electromechanical coupling coefficient K of the XBAR compared to a lamb wave resonator2 effThe filter is large and can be used for building a high-frequency and large-bandwidth filter in 5G or even 6G communication.
However, the electrode arrangement of the conventional XBAR structure only has an interdigital structure and a chessboard structure, which cannot meet all application requirements, and therefore, researchers are urgently needed to provide more improved structures. In addition, the resonant frequency of the XBAR resonator depends only on the thickness of the piezoelectric layer, and is not greatly related to the arrangement mode of the electrodes, and the conventional process cannot prepare a very thin piezoelectric layer, so that the resonant frequency of the resonator is low.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide an ultrahigh frequency resonator with a ring electrode structure, which is a resonator capable of exciting a transverse electric field in a piezoelectric layer so as to excite an ultrahigh resonance frequency and a high effective electromechanical coupling coefficient of a transverse shear mode bulk acoustic wave.
In order to achieve the above object, the present invention provides an uhf resonator having a ring electrode structure, which is characterized in that: comprises a piezoelectric layer and a ring electrode surrounding the piezoelectric layer; the single ring electrodes are distributed around the piezoelectric layer in a ring shape, and the plurality of ring electrodes are distributed along the length direction of the piezoelectric material; the ring electrodes are divided into a first ring electrode array and a second ring electrode array, and the first ring electrode array and the second ring electrode array are distributed and applied with positive and negative voltage excitation; the ratio of the distance between adjacent electrodes in the first ring electrode array and the second ring electrode array to the width of the electrodes is below 10 so as to excite lamb waves, or above 10 so as to excite transverse shear bulk acoustic waves.
Preferably, the material of the piezoelectric layer is one of aluminum nitride, zinc oxide, lithium niobate, PZT, or barium sodium niobate.
Further, the material of the ring electrode is one or more of molybdenum, platinum, gold, silver, aluminum, tungsten, titanium, ruthenium, copper or chromium.
Further, the distance m1 between adjacent electrodes in the first ring electrode array, the distance m2 between adjacent electrodes in the second ring electrode array, m1 and m2 are equal or unequal; the distance n1 between adjacent electrodes in the first ring electrode array and the second ring electrode array, the distance m1 between adjacent electrodes in the first ring electrode array, and the distance m2 between adjacent electrodes in the second ring electrode array are equal or unequal to n1, m1 and m 2.
The invention has the following advantages and beneficial effects:
the invention arranges ring electrode structures with proper size, shape and number around the resonator, a plurality of ring electrodes are distributed along the length direction of the piezoelectric material, and two electrode arrays with opposite voltage polarities are formed by applying alternating positive and negative voltage excitation. This structure is capable of exciting a transverse electric field in the piezoelectric layer, thereby exciting a transverse shear mode bulk acoustic wave. The structure can realize the effective electromechanical coupling coefficient K of 38 percent under the high resonant frequency of 6GHz2 effThe method can be used for building a high-frequency large-bandwidth filter in 5G or even 6G communication.
Drawings
Fig. 1 is a schematic structural view of an uhf resonator of a ring electrode structure according to embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of an uhf resonator of a ring electrode structure according to embodiment 2 of the present invention;
fig. 3 is a schematic structural view of an uhf resonator of a ring electrode structure according to embodiment 3 of the present invention;
fig. 4 is an effect diagram of the uhf resonator of the ring electrode structure according to embodiment 1 of the present invention.
In the figure: a first piezoelectric layer 11, a second piezoelectric layer 12, a first ring electrode array 21, a second ring electrode array 22, a connection electrode 23.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Fig. 1 shows a uhf resonator of the ring electrode structure in this embodiment 1, and the structure includes a first piezoelectric layer 11, and a first ring electrode array 21 and a second ring electrode array 22 surrounding the first piezoelectric layer 11. Each ring electrode surrounds the first piezoelectric layer 11 in a ring shape, a plurality of ring electrodes are distributed along the length direction of the first piezoelectric layer 11, the first ring electrode array is excited by applying positive voltage or negative voltage, and the second ring electrode array is excited by applying opposite voltage. The distance between adjacent electrodes in the first ring electrode array is equal to the distance between adjacent electrodes in the second ring electrode array, and the distance between adjacent electrodes between the first ring electrode array and the second ring electrode array is equal to the distance between adjacent electrodes in the first ring electrode array and the distance between adjacent electrodes in the second ring electrode array.
Example 2
Fig. 2 shows a uhf resonator of the ring electrode structure in this embodiment 2, which includes a first piezoelectric layer 11, and a first ring electrode array 21 and a second ring electrode array 22 surrounding the first piezoelectric layer 11. Each ring electrode surrounds the first piezoelectric layer 11 in a ring shape, a plurality of ring electrodes are distributed along the length direction of the first piezoelectric layer 11, the first ring electrode array is excited by applying positive voltage or negative voltage, and the second ring electrode array is excited by applying opposite voltage. The distance between adjacent electrodes in the first ring electrode array is equal to the distance between adjacent electrodes in the second ring electrode array, and the distance between adjacent electrodes in the first ring electrode array and the second ring electrode array is not equal to the distance between adjacent electrodes in the first ring electrode array and the distance between adjacent electrodes in the second ring electrode array.
Example 3
Fig. 3 shows a uhf resonator having a ring electrode structure in this embodiment 3, which includes a first piezoelectric layer 11, a second piezoelectric layer 12, a first ring electrode array 21 surrounding the piezoelectric layers, a second ring electrode array 22, and a connecting electrode 23. In the structure, each ring electrode surrounds the piezoelectric layer in a ring shape, a plurality of ring electrodes and connecting electrodes are distributed along the length direction of the piezoelectric layer, a first ring electrode array applies positive voltage excitation or negative voltage excitation, and a second ring electrode array applies opposite voltage excitation. The distance between adjacent electrodes in the first ring electrode array is equal to the distance between adjacent electrodes in the second ring electrode array, and the distance between adjacent electrodes between the first ring electrode array and the second ring electrode array is equal to the distance between adjacent electrodes in the first ring electrode array and the distance between adjacent electrodes in the second ring electrode array.
FIG. 4 is a diagram showing the effect of embodiment 1 of the present invention, and it can be seen from the diagram that the resonant frequency of the resonator structure is greater than 6GHz and the effective electromechanical coupling coefficient
And the method can be used for building a high-frequency large-bandwidth filter in 5G or even 6G communication (the effect of the embodiments 2-3 is similar to that of the embodiment 1).
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (5)
1. An ultra-high frequency resonator with a ring electrode structure is characterized in that: comprises a piezoelectric layer and a ring electrode surrounding the piezoelectric layer; the single ring electrodes are distributed around the piezoelectric layer in a ring shape, and the plurality of ring electrodes are distributed along the length direction of the piezoelectric material; the ring electrodes are divided into a first ring electrode array and a second ring electrode array, and the first ring electrode array and the second ring electrode array are distributed and applied with positive and negative voltage excitation; the ratio of the distance between adjacent electrodes in the first ring electrode array and the second ring electrode array to the width of the electrodes is below 10 so as to excite lamb waves, or above 10 so as to excite transverse shear bulk acoustic waves.
2. The ring electrode structured uhf resonator of claim 1, wherein: the piezoelectric layer is made of one of aluminum nitride, zinc oxide, lithium niobate, PZT or barium sodium niobate.
3. The ring electrode structured uhf resonator of claim 1 or 2, characterized in that: the ring electrode is made of one or more of molybdenum, platinum, gold, silver, aluminum, tungsten, titanium, ruthenium, copper or chromium.
4. The ring electrode structured uhf resonator of claim 1 or 2, characterized in that: the distance m1 between adjacent electrodes in the first ring electrode array and the distance m2 between adjacent electrodes in the second ring electrode array, and m1 is equal to or different from m 2; the distance n1 between adjacent electrodes in the first ring electrode array and the second ring electrode array, the distance m1 between adjacent electrodes in the first ring electrode array, and the distance m2 between adjacent electrodes in the second ring electrode array are equal or unequal to n1, m1 and m 2.
5. The uhf resonator of the ring electrode structure of claim 3, wherein: the distance m1 between adjacent electrodes in the first ring electrode array and the distance m2 between adjacent electrodes in the second ring electrode array, and m1 is equal to or different from m 2; the distance n1 between adjacent electrodes in the first ring electrode array and the second ring electrode array, the distance m1 between adjacent electrodes in the first ring electrode array, and the distance m2 between adjacent electrodes in the second ring electrode array are equal or unequal to n1, m1 and m 2.
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| CN202110160241.2A CN112994647A (en) | 2021-02-05 | 2021-02-05 | Ultrahigh frequency resonator with ring electrode structure |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09162451A (en) * | 1995-12-05 | 1997-06-20 | Toyota Motor Corp | Piezoelectric laminate |
| US20150171821A1 (en) * | 2011-06-03 | 2015-06-18 | Seiko Epson Corporation | Piezoelectric vibration element, manufacturing method for piezoelectric vibration element, piezoelectric resonator, electronic device, and electronic apparatus |
| CN204967770U (en) * | 2015-08-03 | 2016-01-13 | 东莞创群石英晶体有限公司 | Quartz crystal syntonizer crystal plate improves structure |
| CN108540105A (en) * | 2018-04-11 | 2018-09-14 | 武汉大学 | Rf-resonator structure |
| CN110868188A (en) * | 2019-11-25 | 2020-03-06 | 武汉大学 | An ultra-high frequency resonator structure based on ring electrodes |
| CN110890872A (en) * | 2019-11-18 | 2020-03-17 | 武汉大学 | A method for reducing the effective electromechanical coupling coefficient of an ultra-high frequency bulk acoustic wave resonator |
| CN112234949A (en) * | 2020-10-29 | 2021-01-15 | 武汉大学 | A multi-band tunable three-dimensional bulk acoustic wave resonator |
| CN112290904A (en) * | 2020-10-29 | 2021-01-29 | 武汉大学 | Ultrahigh frequency resonator based on embedded electrode |
| WO2021164215A1 (en) * | 2020-02-19 | 2021-08-26 | 杭州见闻录科技有限公司 | Solidly mounted resonator having electromagnetic shielding structure, and manufacturing process |
-
2021
- 2021-02-05 CN CN202110160241.2A patent/CN112994647A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09162451A (en) * | 1995-12-05 | 1997-06-20 | Toyota Motor Corp | Piezoelectric laminate |
| US20150171821A1 (en) * | 2011-06-03 | 2015-06-18 | Seiko Epson Corporation | Piezoelectric vibration element, manufacturing method for piezoelectric vibration element, piezoelectric resonator, electronic device, and electronic apparatus |
| CN204967770U (en) * | 2015-08-03 | 2016-01-13 | 东莞创群石英晶体有限公司 | Quartz crystal syntonizer crystal plate improves structure |
| CN108540105A (en) * | 2018-04-11 | 2018-09-14 | 武汉大学 | Rf-resonator structure |
| CN110890872A (en) * | 2019-11-18 | 2020-03-17 | 武汉大学 | A method for reducing the effective electromechanical coupling coefficient of an ultra-high frequency bulk acoustic wave resonator |
| CN110868188A (en) * | 2019-11-25 | 2020-03-06 | 武汉大学 | An ultra-high frequency resonator structure based on ring electrodes |
| WO2021164215A1 (en) * | 2020-02-19 | 2021-08-26 | 杭州见闻录科技有限公司 | Solidly mounted resonator having electromagnetic shielding structure, and manufacturing process |
| CN112234949A (en) * | 2020-10-29 | 2021-01-15 | 武汉大学 | A multi-band tunable three-dimensional bulk acoustic wave resonator |
| CN112290904A (en) * | 2020-10-29 | 2021-01-29 | 武汉大学 | Ultrahigh frequency resonator based on embedded electrode |
Non-Patent Citations (1)
| Title |
|---|
| G. YESNER: "Piezoelectric Energy Harvesting Using a Novel Cymbal Transducer Design", 《2016 JOINT IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, EUROPEAN CONFERENCE ON APPLICATION OF POLAR DIELECTRICS, AND PIEZOELECTRIC FORCE MICROSCOPY WORKSHOP (ISAF/ECAPD/PFM)》 * |
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