CN112992866A - Current bypass structure and IGBT device - Google Patents
Current bypass structure and IGBT device Download PDFInfo
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- CN112992866A CN112992866A CN201911309383.XA CN201911309383A CN112992866A CN 112992866 A CN112992866 A CN 112992866A CN 201911309383 A CN201911309383 A CN 201911309383A CN 112992866 A CN112992866 A CN 112992866A
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- base
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- top plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
- H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Die Bonding (AREA)
Abstract
The present invention relates to a current bypass structure comprising: the plug-in type electrode plate comprises a base and a contact piece positioned at the end part of the base; and the top plate is provided with a plug, the top plate is arranged above the base, and the plug is inserted into the contact piece and is contacted with the inner wall of the contact piece. The reliability of the current bypass under large current is enhanced by the mutual matching of the plug-in type electrode plate and the plug; and the introduced integrated current bypass solves the problem that the corresponding chip does not participate in work after the independent current fails.
Description
Technical Field
The invention relates to the field of power electronic device application, in particular to a current bypass structure and an IGBT device.
Background
The insulated gate bipolar transistor device is the basis and core of power electronic technology and is widely applied to the fields of new energy access, flexible direct current transmission and the like. Compared with a welding type IGBT, the crimping type IGBT device has the advantages of double-sided heat dissipation, high power density, easiness in series connection and the like, improves reliability, and is very suitable for application of flexible direct-current power transmission.
The crimping type IGBT is formed by interconnecting a plurality of chips and other components in a pressure interconnection mode, and at present, two packaging structures are mainly adopted: one is direct hard compression joint, both sides of the chip are contacted by metal hard table surfaces, and the defect is that the uniformity of the pressure on the chip is determined by the processing precision of the surface of a component; one is flexible compression joint, and one side of the chip realizes long-term pressure maintenance and deformation adaptation through the deformation effect of the disc spring, so that the uniform bearing pressure on the power chip is ensured. Wherein, be line contact when taking place the contact between dish spring and the dish spring, area of contact is little, causes contact resistance too big, and then causes the loss of electric current too big, therefore flexible crimping formula IGBT need have solitary electric current bypass structure to realize switching on of device one-way, reduces return circuit resistance.
The current bypass structure in the prior art adopts deformable metal sheets to form independent current bypasses, and has the following disadvantages: the metal sheet is required to be deformed along with the elastic piece in a stretching mode, so that the use thickness and the current carrying capacity of the metal sheet are limited, and the metal sheet is easy to lose efficacy under large current; in case the sheetmetal became invalid, be line contact when taking place the contact between dish spring and the dish spring, area of contact is little, and contact resistance is too big, and then causes the loss of electric current too big, corresponds the unable work of power chip behind the independent electric current bypass became invalid.
Disclosure of Invention
The invention provides a current bypass structure and an IGBT device, which are used for solving the technical problem that a corresponding power chip cannot work after an independent current bypass fails.
The present invention provides a current bypass structure, comprising:
the plug-in type electrode plate comprises a base and a contact piece positioned at the end part of the base; and the top plate is provided with a plug, the top plate is arranged above the base, and the plug is inserted into the contact piece and is contacted with the inner wall of the contact piece.
Preferably, the contact piece includes a pair of metal pieces arranged symmetrically to each other with the plug as a symmetry axis, and a longitudinal section of the metal pieces is configured in an S-shape.
Preferably, the contact pieces include a first contact piece provided at one end of the base and a second contact piece provided at the other end of the base,
the number of the first contact pieces and the number of the second contact pieces are multiple, and the multiple first contact pieces are arranged at equal intervals along the length direction or the width direction of the base; the plurality of second contact pieces are provided at equal intervals in the longitudinal direction or the width direction of the base.
Preferably, the middle part of the base is provided with a boss protruding towards the direction close to the top plate.
Preferably, the plug is configured as a tapered structure having a cross-sectional area decreasing in a direction from the top plate to the bottom plate.
An IGBT device, further comprising: the bottom plate, the chip, the plug-in type electrode plate and the top plate are sequentially arranged according to the current flow direction;
a base plate; the chip is connected to the bottom plate and is electrically connected with the plug-in type electrode plate; and one end of the elastic piece is connected with the top plate, and the other end of the elastic piece is connected with the base to form a compression joint type structure.
Preferably, the method further comprises the following steps: the coaming is fixed on the bottom plate; and an electrode disposed on the chip; the bottom plate, the top plate and the enclosing plate define an inner space for accommodating the chip, the electrode and the plug-in type electrode slice.
Preferably, the elastic member includes: foot, spring and screw, the foot crimping is in on the base, the one end of spring is fixed on the foot, the other end of spring with the roof contact is connected, the screw is located inside the spring, just the one end and the spring fixed connection of screw, the other end of screw with roof threaded connection.
Preferably, the bottoms of the two corresponding side walls of the enclosing plate are inwards provided with clamping tables for positioning the electrodes respectively, and a limiting frame is arranged above the clamping tables and limits the transverse movement of the contact pieces.
Preferably, the number of the IGBT devices is one or more, and a plurality of IGBT devices are used in parallel.
Compared with the prior art, the invention has the advantages that: the reliability of the current bypass under large current is enhanced by the mutual matching of the plug-in type electrode plate and the plug; and the introduced integrated current bypass solves the problem that the corresponding chip does not participate in work after the independent current fails. ,
drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an IGBT device in an embodiment of the invention;
fig. 2 is a schematic perspective cross-sectional structure of an IGBT device in an embodiment of the invention;
fig. 3 is a schematic perspective structure of an IGBT device in an embodiment of the invention;
FIG. 4 is a schematic view of a plug-in electrode sheet in an embodiment of the invention;
fig. 5 is a schematic structural diagram of an IGBT module in the embodiment of the invention.
Reference numerals: 1-bottom plate, 2-chip, 3-electrode, 4-plug-in type electrode plate, 5-foot, 6-elastic piece, 7-top plate, 8-screw, 9-disc spring, 10-plug, 11-contact piece, 12-bounding wall, 13-base, 14-limit frame, and 15-clamping table.
Detailed Description
The invention will be further explained with reference to the drawings.
As shown in fig. 1, a current bypass structure includes:
the plug-in type electrode plate 4 comprises a base 13 and contact pieces 11 at two ends of the base 13;
a top plate 7 with plugs 10 at two ends, wherein the plugs 10 are inserted into the contact pieces 11; the base 13, the contact plate 11, the plug 10 and the top plate 7 are made of conductive metal material, preferably copper material with low resistivity; the contact pieces 11 at the two ends of the base 13 and the base 13 are in a U-shaped structure, the contact pieces 11 are perpendicular to the base 13, the two ends of the top plate 7 are provided with the plugs 10, after the press-fitting force is applied to the top plate 7, the plugs 10 are inserted into the contact pieces 11 more deeply, the contact area is larger, the contact resistance is reduced, and the effective contact of a current loop is realized. And when the contact piece 11 at one end is invalid, the contact piece 11 at the other end can still work, so that the reliability of the current bypass structure is enhanced. The plurality of current bypass structures are used in an integrated mode, when one or more current bypass structures fail, the whole circuit can still work, and reliability is improved.
Preferably, as shown in fig. 1 and 4, the middle of the base 13 is provided with a boss protruding toward the direction close to the top plate 7; an elastic member 6 is provided on each side of the boss.
Preferably, as shown in fig. 1 and 4, the contact pieces 11 are a pair of metal pieces which are symmetrical to each other about the axis of symmetry of the plug 10, and the longitudinal section of the metal pieces is configured in an S-shape; preferably, the metal sheet is made of copper, a holding space for holding the plug 10 is formed between the two metal sheets, and the contact resistance decreases as the plug 10 is inserted deeper, the larger the contact area between the plug 10 and the metal sheet is.
Preferably, as shown in fig. 1 and 4, the contact pieces include a first contact piece provided at one end of the base 13 and a second contact piece provided at the other end of the base 13,
the number of the first contact pieces and the number of the second contact pieces are multiple, and the multiple first contact pieces are arranged at equal intervals along the length direction or the width direction of the base 13; the second contact pieces are provided at equal intervals in the longitudinal direction or the width direction of the base 13.
Preferably, as shown in fig. 1 and 3, the top plate 7 is made of a conductive metal material.
Preferably, as shown in fig. 4, the middle of the base 13 is provided with a boss protruding toward the top plate, and the boss may also protrude toward the bottom plate.
Preferably, as shown in fig. 1 and 2, plug 10 is of a tapered configuration; the plug 10 with the conical structure is easier to insert into the contact piece 11 and more convenient to pull out.
An IGBT device, as shown in fig. 1 and 5, further comprising: the bottom plate 1, the chip, the plug-in type electrode plate 4 and the top plate 7 are sequentially arranged according to the current flow direction; specifically, a bottom plate 1, a chip 2, an electrode 3, a base 13, a contact piece 11, a plug 10 and a top plate 7 are arranged in sequence according to the current flow direction,
a base plate 1;
a chip 2 connected to the base plate 1; the chip 2 is electrically connected with the plug-in type electrode plate 4; the elastic piece 6 is connected with the top plate 7 at one end and connected with the base 13 at the other end to form a compression joint type structure; the chip 2 is a power chip 2 and is soldered on the base plate 1.
Preferably, as shown in fig. 2, the method further includes: the coaming 12 is fixed on the bottom plate 1; an electrode 3 disposed on the chip 2; the bottom plate 1, the top plate 7 and the enclosing plate 12 define an inner space for accommodating the chip 2, the electrode 3, the plug-in electrode piece 4 and the elastic piece 6; the electrodes 3 are used to share the pressure exerted on the chip 2.
Preferably, the method further comprises the following steps: an elastic member 6 including: the foot part 5 is in compression joint with the base 13, one end of the disc spring 9 is fixed on the foot part 5, the other end of the disc spring 9 is in contact connection with the top plate 7, the screw 8 is positioned in the disc spring 9, one end of the screw 8 is fixedly connected with the disc spring 9, and the other end of the screw 8 is in threaded connection with the top plate 7; through elastic component 6, can discharge the heat that produces in the circuit to reduce the heat of circuit, reduce the thermal resistance, promoted the reliability of circuit.
The disc spring 9 is made of high-strength chromium-molybdenum-vanadium structural steel, so that large pressure can be born, the disc spring 9 can restore deformation after the pressure is removed, the disc spring 9 is used for realizing deformation adjustment of the IGBT device after pressure loading in the application process, the pressure is kept adaptive to the deformation for a long time through the deformation effect of the disc spring 9, and the uniform pressure born on the chip 2 is ensured; the foot part 5 is made of aluminum alloy materials, so that the requirements of high heat conductivity, high strength and low density are met.
Preferably, the bottoms of the two corresponding side walls of the enclosing plate 12 are respectively provided with a clamping table 15 for positioning the electrode 3 inwards, a limiting frame 14 is arranged above the clamping table 15, and the limiting frame 14 limits the transverse movement of the contact piece 11; the limiting frame 14 limits the transverse deformation of the contact sheet 11 through the left side wall and the right side wall, so that the contact pressure of the plug 10 and the contact sheet 11 is increased, and the contact resistance is reduced; the width direction of the bottom plate is the transverse direction, and the length direction of the plug is the longitudinal direction.
Preferably, the number is one or more, a plurality of IGBT devices are connected in parallel for use, and a plurality of IGBT devices are connected in parallel to form a module group, so that when one or more IGBT devices are damaged and cannot be used, the whole circuit can still be used.
In one embodiment, the IGBT device comprises a bottom plate 1, a surrounding plate 12, a plug-in type electrode plate 4, an elastic piece 6 and a top plate 7, wherein the surrounding plate 12 is fixed on the bottom plate 1 by adopting a bottom gluing method, and a chip 2, an electrode 3, the plug-in type electrode plate 4, the elastic piece 6 and the top plate 7 are sequentially pressed above the bottom plate 1 from bottom to top; wherein, the chip 2 is welded on the bottom plate 1, and the elastic piece 6 is connected with the top plate 7 by a screw 8.
Preferably, the top plate 7 is provided with a plug 10, the left side and the right side of the plug-in type electrode plate 4 are respectively composed of a series of mutually symmetrical S-shaped metal sheets, after the press-fitting force is applied on the top plate 7, the plug 10(10) enables the S-shaped metal sheets to be deformed and to be contacted more firmly, the enclosing plate 12 limits the transverse deformation of the S-shaped metal sheets, the contact force is increased, and the contact resistance is reduced.
Furthermore, the plug-in type electrode plates 4 and the top plate 7 are made of copper materials with low resistivity, and are separated from a heat conduction path, so that a formed current bypass has higher current capacity, and the integrated plug-in type electrode plates 4 enable all the chips 2 to still work normally after a certain pair of S-shaped metal sheets is invalid.
Preferably, the elastic member 6 includes a foot 5, a disc spring 9 and a screw 8, and is used for maintaining pressure after pressure loading and adjusting deformation in an application process, and the pressure is maintained for a long time and adapted to deformation through a deformation effect of the disc spring 9, so that the uniform pressure born on the chip 2 is ensured.
Further, the disc spring 9 is made of high-strength chromium-molybdenum-vanadium structural steel, so that the disc spring can bear a large press-fitting force, and the disc spring 9 can restore to deform after the press-fitting force is removed; the foot part 5 is made of aluminum alloy materials, so that the requirements of high heat conductivity, high strength and low density are met.
Preferably, the enclosing plate 12 is used for bearing the excessive press-fitting force on the chip 2, positioning the position of the electrode 3, limiting the deformation space of the plug-in type electrode plate 4 and increasing the creepage distance between the bottom plate 1 and the top plate 7, and has a relative creepage tracking index of more than 600 and an impact strength of more than 60KJ/m2Is made of the material of (1).
Preferably, the base plate 1 and the electrode 3 are used as extraction electrodes of the chip 2, and a molybdenum material having a thermal expansion coefficient close to that of the chip 2 is used.
With reference to fig. 1 and 2, the press-bonded IGBT device can be assembled according to the following steps:
step 3, installing the elastic part 6, and fixing the elastic part on a top plate 7 by using a screw 8 to obtain a semi-finished product B of the sub-device;
and 4, sequentially placing the electrode 3, the plug-in type electrode plate 4 and the obtained semi-finished sub-device product B into the obtained semi-finished sub-device product A to obtain the crimping type IGBT device.
While the invention has been described with reference to a preferred embodiment, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, the technical features mentioned in the embodiments can be combined in any way as long as there is no structural conflict. It is intended that the invention not be limited to the particular embodiments disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911309383.XA CN112992866A (en) | 2019-12-18 | 2019-12-18 | Current bypass structure and IGBT device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911309383.XA CN112992866A (en) | 2019-12-18 | 2019-12-18 | Current bypass structure and IGBT device |
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| Publication Number | Publication Date |
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| CN112992866A true CN112992866A (en) | 2021-06-18 |
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| CN201911309383.XA Pending CN112992866A (en) | 2019-12-18 | 2019-12-18 | Current bypass structure and IGBT device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023001356A1 (en) * | 2021-07-19 | 2023-01-26 | Dynex Semiconductor Limited | Power semiconductor device with current bypass mechanism |
| WO2023001355A1 (en) * | 2021-07-19 | 2023-01-26 | Dynex Semiconductor Limited | Power semiconductor device with thermal coupler |
| WO2023025402A1 (en) * | 2021-08-27 | 2023-03-02 | Dynex Semiconductor Limited | Semiconductor device with failure-protection structure |
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| EP2530711A1 (en) * | 2011-05-30 | 2012-12-05 | ABB Research Ltd. | Power semiconductor arrangement |
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| WO2023001355A1 (en) * | 2021-07-19 | 2023-01-26 | Dynex Semiconductor Limited | Power semiconductor device with thermal coupler |
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| WO2023025402A1 (en) * | 2021-08-27 | 2023-03-02 | Dynex Semiconductor Limited | Semiconductor device with failure-protection structure |
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Application publication date: 20210618 |
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