CN113035683B - Lower electrode assembly and plasma processor - Google Patents
Lower electrode assembly and plasma processor Download PDFInfo
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- CN113035683B CN113035683B CN201911356890.9A CN201911356890A CN113035683B CN 113035683 B CN113035683 B CN 113035683B CN 201911356890 A CN201911356890 A CN 201911356890A CN 113035683 B CN113035683 B CN 113035683B
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- electrostatic chuck
- intermediate layer
- edge
- layer
- electrode assembly
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- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 14
- 238000007789 sealing Methods 0.000 claims description 43
- 239000000919 ceramic Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000000741 silica gel Substances 0.000 claims 1
- 229910002027 silica gel Inorganic materials 0.000 claims 1
- 238000013021 overheating Methods 0.000 abstract description 7
- 238000009832 plasma treatment Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 14
- 230000001808 coupling effect Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a lower electrode assembly and a plasma processor, wherein the lower electrode assembly is positioned in a reaction cavity of the plasma processor, and comprises a base, an intermediate layer for controlling the temperature of a substrate and an electrostatic chuck for supporting the substrate, the intermediate layer is positioned on the base, and the electrostatic chuck is positioned on the intermediate layer and performs heat exchange with the intermediate layer; the electrostatic chuck comprises a middle part and a downward protruding edge part, wherein the middle part and the edge part of the electrostatic chuck form a concave space for embedding the middle layer, and the edge part of the electrostatic chuck is contacted with at least part of the side edge of the middle layer. The invention increases the contact area between the edge part of the electrostatic chuck and the middle layer, enhances the heat exchange capability, and can effectively reduce the occurrence of local overheating of the edge area of the electrostatic chuck in the plasma treatment process; and meanwhile, the plasma directivity of the edge is improved, so that the uniformity of the thickness and the profile of the plasma sheath layer is better.
Description
Technical Field
The invention relates to the field of plasma etching, in particular to a lower electrode assembly and a plasma processor.
Background
With the continued development of process technology, the requirement for etch uniformity is becoming more and more stringent, and the control of the uniformity of the electrostatic chuck (Electrostatic chuck, ESC) temperature and plasma sheath thickness becomes extremely important. In the prior art, during the process of plasma treatment, on one hand, the temperature of the edge of the wafer can be greatly increased due to the insufficient cooling capacity of the edge of the wafer by plasma heating; on the other hand, the plasma coupling effect causes the sheath layer at the edge of the wafer to change, so that the uniformity of the plasma is poor at the edge; there is a need to improve uniformity of ESC edge temperature and plasma sheath thickness.
At present, the electrostatic chuck and the middle layer below the electrostatic chuck for controlling the temperature reach balance through heat exchange, but as the coverage area of the electrostatic chuck is larger than that of the middle layer, the area of the edge part of the electrostatic chuck is not contacted with the middle layer below the electrostatic chuck, the heat exchange cannot be carried out, and the heat conduction of heating and cooling can only be carried out through the electrostatic chuck made of contacted ceramics. Localized overheating conditions are created because the edge portion of the electrostatic chuck simply relies on heat conduction from the adjacent electrostatic chuck area being insufficient to conduct heat away so that equilibrium is reached.
Therefore, it is desirable to develop a lower electrode assembly and a plasma processor that can reduce localized overheating of the edge area of the electrostatic chuck during plasma processing.
Disclosure of Invention
The invention aims to provide a lower electrode assembly and a plasma processor, wherein an electrostatic chuck of the lower electrode assembly at least comprises a middle part and a downward protruding edge part, and the edge part of the electrostatic chuck is contacted with at least part of the side edge of an intermediate layer for controlling temperature, so that the contact area between the edge part of the electrostatic chuck and the intermediate layer is increased, the heat exchange capability is enhanced, and the occurrence of local overheating of the edge area of the electrostatic chuck in the plasma treatment process can be effectively reduced.
In order to achieve the above purpose, the present invention is realized by the following technical scheme:
a lower electrode assembly for a plasma processor, positioned within a reaction chamber of the plasma processor, the lower electrode assembly comprising a pedestal, an intermediate layer for controlling a temperature of a substrate, and an electrostatic chuck for supporting the substrate, the intermediate layer being positioned above the pedestal, the electrostatic chuck being positioned above and in heat exchange relationship with the intermediate layer; the electrostatic chuck comprises a middle part and a downward protruding edge part, wherein the middle part and the edge part of the electrostatic chuck form a concave space for the middle layer to be embedded, and the edge part of the electrostatic chuck is contacted with at least part of the side edge of the middle layer.
Preferably, a heating device is provided in the intermediate layer.
Preferably, a lower surface of the intermediate portion is in contact with an upper surface of the intermediate layer, and a lower surface of the edge portion is in contact with an upper surface of the base.
Preferably, the lower surface of the intermediate portion is in contact with the upper surface of the intermediate layer, and a gap exists between the lower surface of the edge portion and the upper surface of the base.
Preferably, the intermediate layer side edge is provided with a side shield located in the gap between the edge portion and the base, and an upper surface of the side shield is in contact with a lower surface of the edge portion, and a lower surface of the side shield is in contact with an upper surface of the base.
Preferably, a thermally conductive sealing layer is disposed between the inner side of the edge portion of the electrostatic chuck and the side edge of the intermediate layer, the sealing layer being applied to the side edge of the intermediate layer.
Preferably, the sidewall shield is annular and is sleeved outside the sealing layer.
Preferably, the sealing layer is a silicone layer such that an inner side of an edge portion of the electrostatic chuck is bonded to an intermediate layer side edge.
Preferably, the electrostatic chuck is made of ceramic, and the intermediate layer and the base are made of a thermally conductive material.
The invention also provides a plasma processor, which comprises a reaction cavity, wherein the reaction cavity is internally provided with the lower electrode assembly, the upper part in the reaction cavity is provided with an upper polar plate, a substrate in the lower electrode assembly is connected with a radio frequency power source and is used for forming plasma between the substrate and the upper polar plate to process a substrate, and the surface of the substrate on the electrostatic chuck forms a plasma sheath layer.
Compared with the prior art, the invention has the beneficial effects that: (1) The invention increases the contact area between the edge part of the electrostatic chuck and the middle layer, enhances the heat exchange capability, and can effectively reduce the occurrence of local overheating of the edge area of the electrostatic chuck in the plasma treatment process; (2) The thickness of the electrostatic chuck is increased, the coupling effect of the radio frequency power source of the electrostatic chuck at the edge is enhanced, the plasma directivity of the edge is improved, and the thickness and the outline of a plasma sheath layer are more uniform; (3) The invention can also replace the side wall shield by the edge part of the electrostatic chuck made of ceramic, thereby avoiding the attack of corrosive plasma gas and free radicals and increasing the use safety and stability of the electrostatic chuck.
Drawings
FIG. 1 is a schematic view of the overall structure of a plasma processor according to the present invention;
fig. 2-2 a are schematic views of a lower electrode assembly according to a first embodiment of the present invention;
FIG. 3 is a schematic view of a bottom electrode assembly according to a second embodiment of the present invention;
FIG. 4 is a schematic diagram of an extended implementation of the first embodiment of the present invention;
FIG. 5 is a schematic diagram of an extended implementation of a second embodiment of the present invention;
fig. 6 is a schematic diagram of a further development embodiment of fig. 4 according to the invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, in this document, the terms "comprises," "comprising," "has," "having," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal device. Without further limitation, an element defined by the statement "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article or terminal device comprising the element.
Fig. 1 is a schematic structural view of a plasma processor according to the present invention. The plasma processor includes a vacuum reaction chamber 110 in which the plasma processing process of the present invention is performed. The vacuum reaction chamber includes a generally cylindrical reaction chamber sidewall made of a metallic material. A gas spraying device 150 is arranged above the side wall of the reaction cavity, and the gas spraying device 150 is connected with a gas supply device 140. The reaction gas in the gas supply device 140 enters the vacuum reaction chamber 110 through the gas shower device 150.
Fig. 2 exemplarily shows a structural schematic view of a lower electrode assembly of the plasma processor. A lower electrode assembly is disposed in the vacuum reaction chamber 110. The lower electrode assembly includes a base 1, an intermediate layer 2 for controlling the temperature of a substrate, and an electrostatic chuck 3 for placing a substrate 100 to be processed, the substrate 100 being placed on an upper surface of the electrostatic chuck 3. An intermediate layer 2 is positioned above the base 1, and an electrostatic chuck 3 is positioned above the intermediate layer 2 and in heat exchange relationship with the intermediate layer 2.
The base 1 of the invention can be used as a lower polar plate, the gas spraying device 150 is used as an upper polar plate, and the distance between the two polar plates is the polar plate distance. The rf power of the rf power source 130 is applied to the susceptor 1, an electric field is generated in the vacuum reaction chamber 110, which dissociates the reaction gas into plasma containing a large amount of active particles such as electrons, ions, atoms in an excited state, molecules, and free radicals, which can react with the surface of the substrate 100 to be processed in various physical and chemical ways, so that the topography of the substrate surface is changed, i.e., the etching process is completed, and a plasma sheath 100a is formed on the surface of the substrate 100 on the electrostatic chuck 3, as shown in fig. 2 a. An exhaust pump 120 is further disposed below the vacuum reaction chamber 100 for exhausting the reaction byproducts out of the vacuum reaction chamber 110.
As shown in fig. 1-2, the electrostatic chuck 3 is made of ceramic, the intermediate layer 2 and the susceptor 1 are made of a thermally conductive material, for example, both the intermediate layer 2 and the susceptor 1 may be made of aluminum. A heating device is provided in the intermediate layer 2 for controlling the substrate temperature. The electrostatic chuck 3 includes a middle portion 31, and a downwardly protruding edge portion 32. The intermediate portion 31 of the electrostatic chuck 3 is an area that covers and is in direct contact with the intermediate layer 2. The edge portion 32 of the electrostatic chuck 3 is a region that spans the side edge of the intermediate layer 2. The edge part 32 of the electrostatic chuck 3 is contacted with at least part of the side edge of the middle layer 2, so the invention increases the contact area of the edge part of the electrostatic chuck 3 and the middle layer 2, enhances the heat exchange capability, and can effectively reduce the local overheating of the edge area of the electrostatic chuck during the plasma treatment process; meanwhile, since the thickness of the electrostatic chuck is increased, the coupling effect of the radio frequency power source of the electrostatic chuck at the edge is enhanced, and the plasma directivity of the edge portion is improved, so that the thickness and the profile of the plasma sheath layer 100a are more uniform, as shown in fig. 2 a.
Embodiment one:
in the first embodiment, the middle portion 31 and the edge portion 32 of the electrostatic chuck 3 form a concave space for the intermediate layer 2 to be embedded therein, and the lower surface of the middle portion 31 of the electrostatic chuck 2 contacts with the upper surface of the intermediate layer 2, as shown in fig. 2. Illustratively, the concave space is smaller than the volume of the intermediate layer 2, and the height of the concave space is smaller than the thickness of the intermediate layer 2, so that the concave space surrounds a portion of the intermediate layer 2, and a portion of the intermediate layer is not surrounded by the concave space, and a gap 2a exists between the lower surface of the edge portion 32 of the electrostatic chuck 2 and the upper surface of the base 1, as shown in fig. 2.
The intermediate layer 2 is provided with a side edge with a detachable side shield 5, as shown in fig. 4, the side shield 5 being located in the gap 2a between the edge portion 32 of the electrostatic chuck 2 and the base 1, and an upper surface of the side shield 5 being in contact with a lower surface of the edge portion 32 of the electrostatic chuck 2, and a lower surface of the side shield 5 being in contact with an upper surface of the base 1. The side shield 5 of the present invention is intended to protect the intermediate layer 2 from the corrosive plasma gases and radicals, since the side shield 5 is first slowly eroded away by the plasma under the corrosive plasma gases and radicals.
As shown in fig. 6, the present embodiment further provides a thermally conductive sealing layer 4 between the inner side of the edge portion 32 of the electrostatic chuck 3 and the side edge of the intermediate layer 2, the sealing layer 4 being applied to the side edge of the intermediate layer 2, the sealing layer 4 being used to further prevent the intermediate layer from being exposed to the plasma etching environment and further protect the intermediate layer 2 from corrosive plasma gases and free radicals. It should be noted that, in order to ensure the heat exchange between the edge portion 32 of the electrostatic chuck 3 and the intermediate layer 2, the sealing layer 3 of the present invention is made of a material with a better heat conductivity, so as not to affect the heat exchange between the edge portion 32 of the electrostatic chuck 3 and the intermediate layer 2.
Illustratively, the upper end of the sealing layer 4 is in contact with the lower surface of the edge portion 32 of the electrostatic chuck 3, the lower end of the sealing layer 4 is in contact with the upper surface of the base 1, and the side shield 5 is located outside the sealing layer 4, as shown in fig. 6. Further, the side shield 5 is of a ring-shaped structure and is sleeved outside the sealing layer 4. Preferably, the sealing layer 4 is a silicone layer such that the inside of the edge portion 32 of the electrostatic chuck 3 is bonded to the side edge of the intermediate layer 2.
In another example, the lower end of the sealing layer 4 may also be higher than or flush with the lower surface of the edge portion 32 of the electrostatic chuck 3, and the upper end of the sealing layer 4 is in contact with the lower surface of the edge portion 32 of the electrostatic chuck 3, the edge portion 32 of the electrostatic chuck 3 completely surrounding the sealing layer 4; one side surface of the sealing layer 4 is in contact with the side edge of the intermediate layer 2, and the other side surface of the sealing layer 4 is in contact with the inner side surface of the edge portion 32 of the electrostatic chuck 3.
Alternatively, illustratively, the lower end of the sealing layer 4 is lower than the lower surface of the edge portion 32 of the electrostatic chuck 3 and higher than the upper surface of the base 1, one side surface of the sealing layer 4 is in contact with the side edge of the intermediate layer 2, the upper portion of the other side surface of the sealing layer 4 is in contact with the inner side surface of the edge portion 32 of the electrostatic chuck 3, and the side shield 5 is located outside the sealing layer 4.
It should be noted that, the upper end of the sealing layer 4 of the present invention is not limited to contact with the lower surface of the edge portion 32 of the electrostatic chuck 3, but may not contact with the lower surface of the edge portion 32 of the electrostatic chuck 3, for example, the upper end of the sealing layer 4 may be lower than the lower surface of the edge portion 32 of the electrostatic chuck 3, so long as the sealing layer 4 is coated on the side edge of the intermediate layer, which serves to prevent the intermediate layer from being exposed to the plasma etching environment to reduce the damage of the intermediate layer from corrosive plasma gas and free radicals.
Embodiment two:
in the second embodiment, the middle portion 31 and the edge portion 32 of the electrostatic chuck 3 form a concave space for the intermediate layer 2 to be embedded therein, and the lower surface of the middle portion 31 of the electrostatic chuck 2 contacts with the upper surface of the intermediate layer 2, as shown in fig. 3. Wherein the volume of the concave space is equal to the volume of the intermediate layer 2, and the lower surface of the edge portion 32 of the electrostatic chuck 3 is in contact with the upper surface of the base 1, such that the concave space completely surrounds the intermediate layer 2, as shown in fig. 3. The concave space of the electrostatic chuck 3 in the second embodiment completely encloses the intermediate layer 2, so that the intermediate layer 2 is completely embedded in the concave space, thus protecting the intermediate layer 2 from the corrosive plasma gas and free radicals, and the edge portion 32 of the electrostatic chuck 3 also plays a role in protecting the side shield in the first embodiment.
Preferably, in the second embodiment, a heat-conducting sealing layer 4 is further disposed between the inner side of the edge portion 32 of the electrostatic chuck 3 and the side edge of the intermediate layer 2, and the sealing layer 4 is applied to the side edge of the intermediate layer 2. It should be noted that, in order to ensure the heat exchange between the edge portion 32 of the electrostatic chuck 3 and the intermediate layer 2, the sealing layer 3 of the present invention is made of a material with a better heat conductivity, so as not to affect the heat exchange between the edge portion 32 of the electrostatic chuck 3 and the intermediate layer 2.
Illustratively, the edge portion 32 of the electrostatic chuck 3 completely encloses the sealing layer 4, and the upper end of the sealing layer 4 is in contact with the lower surface of the edge portion 32 of the electrostatic chuck 3, and the lower end of the sealing layer 4 is in contact with the upper surface of the base 1 as shown in fig. 5; one side surface of the sealing layer 4 is in contact with the side edge of the intermediate layer 2, and the other side surface of the sealing layer 4 is in contact with the inner side surface of the edge portion 32 of the electrostatic chuck 3, as shown in fig. 5. In another example, the edge portion 32 of the electrostatic chuck 3 completely surrounds the sealing layer 4, and the lower end of the sealing layer 4 may not contact the upper surface of the base 1, i.e., the lower end of the sealing layer 4 is higher than the upper surface of the base 1.
It should be noted that, the upper end of the sealing layer 4 of the present invention is not limited to contact with the lower surface of the edge portion 32 of the electrostatic chuck 3, but may not contact with the lower surface of the edge portion 32 of the electrostatic chuck 3, and the upper end of the sealing layer 4 may be lower than the lower surface of the edge portion 32 of the electrostatic chuck 3, so long as the sealing layer 4 is coated on the side edge of the intermediate layer, which is used to prevent the intermediate layer from being exposed to the plasma etching environment to reduce the damage of the intermediate layer from corrosive plasma gas and free radicals.
In summary, the electrostatic chuck of the lower electrode assembly is designed to at least comprise the middle part and the edge part protruding downwards, and the edge part of the electrostatic chuck is contacted with at least part of the side edge of the intermediate layer for controlling the temperature, so that the contact area between the edge part of the electrostatic chuck and the intermediate layer is increased, the heat exchange capability is enhanced, and the occurrence of local overheating condition of the edge area of the electrostatic chuck in the plasma treatment process can be effectively reduced; the thickness of the electrostatic chuck is increased, the coupling effect of the radio frequency power source of the electrostatic chuck at the edge is enhanced, the plasma directivity of the edge is improved, and the thickness and the outline of a plasma sheath layer are more uniform; the invention can also replace the side wall shield by the edge part of the electrostatic chuck made of ceramic, thereby avoiding the attack of corrosive plasma gas and free radicals and increasing the use safety and stability of the electrostatic chuck.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (8)
1. A lower electrode assembly for a plasma processor, positioned within a reaction chamber of the plasma processor, the lower electrode assembly comprising a pedestal, an intermediate layer for controlling the temperature of a substrate, and an electrostatic chuck for supporting the substrate, wherein the intermediate layer is positioned above the pedestal, and the electrostatic chuck is positioned above and in heat exchange relationship with the intermediate layer; the electrostatic chuck comprises a middle part and a downward protruding edge part, wherein the middle part and the edge part of the electrostatic chuck form a concave space for the middle layer to be embedded, and the edge part of the electrostatic chuck is contacted with at least part of the side edge of the middle layer; a heating device is arranged in the middle layer; a gap exists between the lower surface of the edge portion and the upper surface of the base; providing a side shield at a side edge of the intermediate layer, the side shield being located within the gap between the edge portion and the base; a thermally conductive sealing layer is disposed between the inner side of the edge portion of the electrostatic chuck and the side edge of the intermediate layer, the sealing layer being applied to the side edge of the intermediate layer.
2. The lower electrode assembly according to claim 1,
the lower surface of the intermediate portion is in contact with the upper surface of the intermediate layer, and the lower surface of the edge portion is in contact with the upper surface of the base.
3. The lower electrode assembly according to claim 1,
the lower surface of the intermediate portion is in contact with the upper surface of the intermediate layer.
4. The lower electrode assembly according to claim 1,
an upper surface of the side shield is in contact with a lower surface of the edge portion, and a lower surface of the side shield is in contact with an upper surface of the base.
5. The lower electrode assembly according to claim 1,
the side shield is annular and sleeved outside the sealing layer.
6. The lower electrode assembly according to claim 1,
the sealing layer is a silica gel layer, so that the inner side of the edge part of the electrostatic chuck is adhered to the side edge of the middle layer.
7. The lower electrode assembly according to any one of claims 1 to 6, wherein,
the electrostatic chuck is made of ceramic, and the intermediate layer and the base are made of a thermally conductive material.
8. A plasma processor comprising a reaction chamber, wherein a lower electrode assembly according to any one of claims 1-7 is disposed in the reaction chamber, an upper plate is disposed at an upper portion in the reaction chamber, a substrate in the lower electrode assembly is connected to a rf power source for forming a plasma between the substrate and the upper plate to process a substrate, and a plasma sheath is formed on a surface of the substrate on the electrostatic chuck.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911356890.9A CN113035683B (en) | 2019-12-25 | 2019-12-25 | Lower electrode assembly and plasma processor |
| TW109139546A TW202125691A (en) | 2019-12-25 | 2020-11-12 | Lower electrode assembly and plasma processor using the same capable of effectively reducing the local overheating in the edge area of the electrostatic chuck during the plasma treatment process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911356890.9A CN113035683B (en) | 2019-12-25 | 2019-12-25 | Lower electrode assembly and plasma processor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113035683A CN113035683A (en) | 2021-06-25 |
| CN113035683B true CN113035683B (en) | 2023-09-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911356890.9A Active CN113035683B (en) | 2019-12-25 | 2019-12-25 | Lower electrode assembly and plasma processor |
Country Status (2)
| Country | Link |
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| CN (1) | CN113035683B (en) |
| TW (1) | TW202125691A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116272752B (en) * | 2021-12-20 | 2025-09-23 | 中国石油化工股份有限公司 | Plasma reactor and its application and method for preparing hydrocarbon products from light alkanes |
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| JP4034145B2 (en) * | 2002-08-09 | 2008-01-16 | 住友大阪セメント株式会社 | Susceptor device |
| WO2017033738A1 (en) * | 2015-08-27 | 2017-03-02 | 住友大阪セメント株式会社 | Electrostatic chuck device |
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- 2019-12-25 CN CN201911356890.9A patent/CN113035683B/en active Active
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- 2020-11-12 TW TW109139546A patent/TW202125691A/en unknown
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| Publication number | Publication date |
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| TW202125691A (en) | 2021-07-01 |
| CN113035683A (en) | 2021-06-25 |
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