CN113270316B - Etching method for substrate to be etched and etching machine - Google Patents
Etching method for substrate to be etched and etching machine Download PDFInfo
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- CN113270316B CN113270316B CN202110550320.4A CN202110550320A CN113270316B CN 113270316 B CN113270316 B CN 113270316B CN 202110550320 A CN202110550320 A CN 202110550320A CN 113270316 B CN113270316 B CN 113270316B
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- 238000005530 etching Methods 0.000 title claims abstract description 324
- 239000000758 substrate Substances 0.000 title claims abstract description 169
- 238000000034 method Methods 0.000 title claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 239000007788 liquid Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 14
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- 239000007921 spray Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000000498 cooling water Substances 0.000 claims description 8
- 238000010992 reflux Methods 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum ions Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The application discloses an etching method and an etching machine for a substrate to be etched, wherein the etching method for the substrate to be etched comprises the following steps: setting the initial temperature of the etching solution; sequentially etching a plurality of substrates to be etched; recording the number of the substrates which are etched; obtaining a compensation temperature parameter of the etching solution according to the number of the substrates; according to the compensation temperature parameter, the etching temperature of the etching solution is adjusted through the above mode, so that the widths of the metal wires of the substrates processed successively are consistent.
Description
Technical Field
The application relates to the technical field of display, in particular to an etching method and an etching machine for a substrate to be etched.
Background
Due to the rapid development of industries such as semiconductors and display panels, the quality requirements for display panels are also increasing. Among them, etching technology is also continuously advancing as an essential process link of semiconductors, display panels, and the like. Metal wires in the display panel and metal layers in the thin film transistor are not separated from metal aluminum, and the metal aluminum has excellent conductivity and low cost and is widely used. In the process of forming the metal wiring, after a metal layer is formed on a silicon substrate or a glass substrate, part of metal is selectively etched away, and the left metal forms the metal wiring. Etching is also classified into dry etching and wet etching; wet etching removes the metal layer by a chemical reaction of a liquid with the metal.
However, in wet etching, the service cycle, concentration and viscosity of the etching solution change with time, and thus the widths of metal traces of display panels manufactured successively are inconsistent; the problems to be solved in the field are solved.
Disclosure of Invention
The present application provides an etching method and an etching machine for a substrate to be etched, so that widths of metal traces of the substrate processed successively are the same.
The application discloses an etching method of a substrate to be etched, which comprises the following steps:
setting the initial temperature of the etching solution;
sequentially etching a plurality of substrates to be etched;
recording the number of the substrates which are etched; obtaining a compensation temperature parameter of the etching solution according to the number of the substrates;
and adjusting the etching temperature of the etching solution according to the compensation temperature parameter.
In one embodiment of the present application, the number of substrates on which etching is completed is recorded; the step of obtaining the compensation temperature of the substrate to be etched according to the number of the substrates comprises the following steps:
the compensation temperature parameter increases linearly with the number of substrates.
In an embodiment of the application, the step of adjusting the etching temperature of the etching solution according to the compensation temperature parameter includes:
and adjusting the etching temperature of the etching solution in real time according to the compensation temperature parameter.
In one embodiment of the present application, the number of substrates on which etching is completed is recorded; the step of obtaining the compensation temperature parameter of the etching solution according to the number of the substrates comprises the following steps:
when the number of the substrates reaches n pieces; outputting a preset compensation temperature; and counting is restarted;
when the number of the substrates does not reach n pieces, continuously counting the substrates which are etched;
the step of adjusting the etching temperature of the etching solution according to the compensation temperature parameter comprises the following steps:
adjusting the etching temperature of the etching solution according to the preset compensation temperature;
where n is a natural number other than zero.
In an embodiment of the present application, the step of sequentially etching the plurality of substrates includes:
conveying the substrate to be etched into an etching machine;
opening a switch of an etching solution supply box to spray etching solution on the substrate to be etched;
after etching for a preset time, taking out the etched substrate;
and continuing to carry out the step of conveying the substrate to be etched into the etching machine.
In an embodiment of the present application, opening the etching solution switch so that the etching solution is sprayed on the substrate to be etched further includes:
collecting the etching solution sprayed on the substrate to be etched;
and refluxing the etching solution to the etching solution supply tank.
In an embodiment of the present application, the predetermined compensation temperature is 0.1 to 0.2 degrees, and the number n of the substrates is 500 to 1000.
In one embodiment of the present application, the mass fraction of water in the etching solution is 16-22%; the mass fraction of the phosphoric acid is 67-73%; the mass fraction of acetic acid is 8-12%; the mass fraction of the nitric acid is 1.7-2.2%;
the etching solution is used for etching the metal layer on the glass substrate;
the metal layer is made of one or more of aluminum and molybdenum materials.
The application also discloses an etching machine table, and an etching method using the substrate to be etched comprises the following steps: the device comprises an etching solution supply module, a substrate placing module, a counting module and a control module; the etching solution supply module is used for providing etching solution to etch the substrate; the substrate placing module is used for bearing the substrate; the counting module is used for recording the number of the substrates which are etched; and the control module is used for adjusting the temperature of the etching solution.
In one embodiment of the present application, the etching solution supply module includes: an etching liquid supply box, an etching liquid supply pipeline and a reflux device; the etching solution supply box is used for storing etching solution; the etching solution supply pipeline is used for spraying the etching solution to the substrate to be etched on the substrate placing module; the reflux device is used for recovering the etching liquid used on the substrate placing module; the control module comprises: the heating module, the circulating pump and the cooling water module; the heating module is used for heating the etching solution in the etching solution supply box; the circulating pump is used for using the etching liquid of the etching liquid supply tank to circularly flow; the cooling water module is used for maintaining the temperature of the etching liquid supply box.
In the present application, the etching solution is generally reused, and has a usage period, that is, the etching solution is not used again after the etching solution is used for a period from a new solution, and the solution needs to be changed. For example, the etching solution supply TANK (TANK) mentioned below in the present application may store approximately 3000 liters of etching solution, which is sufficient to etch 10000 substrates to be etched, for about 6 days. And after 10000 substrates to be etched are finished, carrying out liquid changing treatment on the etching liquid. During the period of using the etching solution, but the later the etching solution is used, the more metal ions are dissolved in the etching solution, the viscosity of the etching solution increases, so that the fluidity of the etching solution on the glass substrate is deteriorated, and the etching rate is reduced. Therefore, the difference in the manufacturing process exists between the glass substrate etched first and the glass substrate etched later. The etch rate is related to the temperature of the etchant solution, with higher temperatures corresponding to higher etch rates. The etching rate of the same etching solution is related to the number of the substrates which are etched, and the longer the corresponding number of the substrates is, the longer the etching solution is used, and the slower the corresponding etching rate is. This application is through adjusting the temperature of the etching solution in later stage for the temperature of etching solution life cycle is correspondingly improved in the later stage of etching solution life cycle, and then improves the viscosity of later stage etching solution, makes etching rate in the life cycle of etching solution, keeps the same etching rate as far as possible. Thereby enabling the glass substrate etched first to be more consistent with the glass substrate etched later.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
FIG. 1 is a schematic illustration of a method of etching a substrate according to an embodiment of the present disclosure;
FIG. 2 is a graph illustrating a corresponding etch rate versus substrate number and temperature for one embodiment of the present application;
FIG. 3 is a schematic view of an etching tool according to an embodiment of the present disclosure;
FIG. 4 is a schematic illustration of a step of an etching method of etching a substrate according to another embodiment of the present application;
fig. 5 is a schematic view of the line width of the metal trace completing etching the substrate under the conditions of uncompensated temperature and compensated temperature in the present application.
100, a substrate; 200. an etching machine; 210. an etching solution supply module; 211. an etching solution supply tank; 212. an etching solution supply line; 213. a reflux device; 220. a substrate placing module; 230. a counting module; 240. a control module; 241. a heating module; 242. a circulation pump; 243. and a cooling water module.
Detailed Description
It is to be understood that the terminology, the specific structural and functional details disclosed herein are for the purpose of describing particular embodiments only, and are representative, but that the present application may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
In the description of the present application, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating relative importance or as implicitly indicating the number of technical features indicated. Thus, unless otherwise specified, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature; "plurality" means two or more. The terms "comprises" and any variations thereof, are intended to cover a non-exclusive inclusion, which may have the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or combinations thereof.
Further, terms of orientation or positional relationship indicated by "center", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, are described based on the orientation or relative positional relationship shown in the drawings, are simply for convenience of description of the present application, and do not indicate that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application.
Furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "coupled" are to be construed broadly and encompass, for example, both fixed and removable coupling as well as integral coupling; can be mechanically or electrically connected; either directly or indirectly through intervening media, or through both elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
The present application will be described in detail below with reference to the drawings and an embodiment of the present application.
As shown in fig. 1, as an embodiment of the present application, there is disclosed an etching method of a substrate to be etched,
s10: setting the initial temperature of the etching solution;
s20: sequentially etching a plurality of substrates to be etched;
s30: recording the number of the substrates which are etched; obtaining a compensation temperature parameter of the etching solution according to the number of the substrates;
s40: and adjusting the etching temperature of the etching solution according to the compensation temperature parameter.
In the present application, the etching solution is generally reused, and has a usage period, that is, the etching solution is not used again after the etching solution is used for a period from a new solution, and the solution needs to be changed. For example, the etching solution supply TANK (TANK) mentioned below in the present application may store approximately 3000 liters of etching solution, which is sufficient to etch 10000 substrates to be etched, for about 6 days. And after 10000 substrates to be etched are finished, carrying out liquid changing treatment on the etching liquid. During the period of using the etching solution, but the later the etching solution is used, the more metal ions are dissolved in the etching solution, the viscosity of the etching solution increases, so that the fluidity of the etching solution on the glass substrate is deteriorated, and the etching rate is reduced. Therefore, the difference in the manufacturing process exists between the glass substrate etched first and the glass substrate etched later. Fig. 2 shows a graph of the etching rate versus the temperature of the etching liquid, the number of substrates that have completed etching. It is known that the etching rate is related to the temperature of the etching solution, and the higher the temperature, the higher the corresponding etching rate. The etching rate of the same etching solution is related to the number of the substrates which are etched, and the longer the number of the corresponding substrates is, the longer the using time of the etching solution is, and the slower the corresponding etching rate is. This application is through adjusting the temperature of the etching solution in later stage for the temperature of etching solution life cycle is correspondingly improved in the later stage of etching solution life cycle, and then improves the viscosity of later stage etching solution, makes etching rate in the life cycle of etching solution, keeps the same etching rate as far as possible. Thereby ensuring that the etching rates of the glass substrate etched first and the glass substrate etched later are more consistent.
Specifically, the etching solution comprises the following components: the mass fraction of water in the etching solution is 16-22%; the mass fraction of the phosphoric acid is 67-73%; the mass fraction of the acetic acid is 8-12%; the mass fraction of the nitric acid is 1.7-2.2%; the etching solution is used for etching a metal layer on a glass substrate; the metal layer is made of one or more of aluminum and molybdenum materials; for example, the first metal layer in the display panel adopts a composite metal layer of an aluminum layer and a molybdenum layer; the second metal layer is a molybdenum/aluminum/molybdenum composite metal layer. In the application, the corresponding etching solution can achieve a good etching effect on the first metal layer and the second metal layer.
As shown in fig. 3, as another embodiment of the present application, an etching apparatus 200 for an etching method using the above-mentioned substrate to be etched is disclosed, which includes: an etching solution supply module 210, a substrate placing module 220, a counting module 230 and a control module 240; the etching solution supply module 210 is used for providing an etching solution to etch the substrate 100; the substrate placing module 220 is used for carrying the substrate 100; the counting module 230 is used for recording the number of the substrates after etching; the control module 240 is used for adjusting the temperature of the etching solution.
The etching solution supply module 210 includes: an etching liquid supply tank 211 for storing an etching liquid, an etching liquid supply pipe 212, and a reflux unit 213; the etching solution supply pipeline 212 is used for spraying the etching solution onto the substrate 100 to be etched on the substrate placing module 220; the reflow device 213 is used to recover the etching solution used by the substrate placing module 220; the reflow device 213 is correspondingly arranged below the substrate placing module 220 and used for collecting the used etching solution; the reflux unit 213 transfers the collected etching solution to the etching solution supply tank;
the heating of the application is mainly realized by the control module, so that the etching solution in the etching solution supply tank 211 is heated; specifically, the control module 240 includes: a heating module 241, a circulation pump 242, and a cooling water module 243; the heating module 241 is configured to heat the etching solution in the etching solution supply tank 210; the circulating pump 242 is used for circulating the etching solution using the etching solution supply tank 210; the cooling water module 243 is used for maintaining the temperature of the etching solution in the etching solution supply tank 210. The heating module 241 may be a heating rod, the circulating pump 242 may be configured to enable the etching solution to flow in the etching solution supply tank 210 in a circulating manner, correspondingly, when the heating module 241 heats, the heating module may heat more uniformly to ensure that the temperature of the etching solution in the etching solution supply tank is consistent, and the circulating pump 242 includes a motor and a motor impeller, and the motor impeller is driven by the motor to rotate to achieve an effect similar to that of a water pump, so as to draw out the etching solution and then return the etching solution, thereby achieving an effect of one circulating flow. The Cooling Water module 243 is a Process Cooling Water system (PCW), and the PCW is mainly used for Cooling Process equipment, so that the temperature of the etching solution can be fixed at a certain temperature after being heated, and the temperature of the etching solution is not increased or decreased due to the influence of the ambient temperature or other factors.
The substrate placing module can be used for simultaneously placing a plurality of substrates to be etched; in the embodiment, the substrate placing module adopts four placing positions, and can be used for simultaneously placing four substrates to be etched; the corresponding etching liquid supply module adopts four spray heads which are arranged corresponding to the four placing positions; the spray head can uniformly spray the etching solution on the corresponding substrate to be etched; this embodiment can promote the etching rate through setting up a plurality of places, improves the efficiency of sculpture base plate to improve the productivity.
As shown in fig. 4, the etching machine sequentially etches a plurality of substrates, and the step of sequentially etching the plurality of substrates includes:
s201: conveying the substrate to be etched into an etching machine;
s202: opening a switch of an etching solution supply box to spray etching solution on the substrate to be etched;
s203: after etching for a preset time, taking out the etched substrate;
s204: and continuing to carry out the step of conveying the substrate to be etched into the etching machine.
In the embodiment, the substrate to be etched is provided with a production line and is sequentially sent into the etching machine, and after etching is finished, the substrate is sent out of the etching machine; of course, for the etching machine corresponding to the four placing positions, four substrates to be etched are simultaneously sent to the four placing positions. It should be noted that the etching solution supply box in this embodiment is generally opened only once when the substrate processing apparatus is started, and the etching solution can be always kept in an opened state in an actual flow sheet (i.e., a substrate to be etched is sequentially sent to the etching machine in the production line); the method avoids the need of switching once when one substrate is etched, and generally only about 100s of etching is needed for etching one substrate.
Recording the number of the substrates which are etched; the step of obtaining the compensation temperature of the substrate to be etched according to the number of the substrates comprises the following steps:
the compensation temperature parameter increases linearly with the number of substrates.
In the application, in the using period of the etching solution, each time one substrate is etched, the number of metal ions, such as aluminum ions, in the etching solution is gradually increased, so that the viscosity of the etching solution is increased; thereby affecting the etching rate of the etching solution. And the effect of this etch rate is related to the number of substrates that are etched, i.e., varied in real time. Therefore, the compensation temperature parameter is set to change in real time and linearly increases along with the number of the substrates.
Correspondingly, the step of adjusting the etching temperature of the etching solution according to the compensation temperature parameter comprises the following steps:
and adjusting the etching temperature of the etching solution in real time according to the compensation temperature parameter.
The temperature of the etching solution is adjusted through real-time compensation, so that the temperature of the etching solution gradually rises, rises along with the number of the substrates after etching, and is in positive correlation. The specific implementation and adjustment method of the etching machine comprises the following specific steps: the etching machine is provided with a temperature monitoring device which monitors the temperature of the etching solution in real time, feeds the temperature back to the control center and controls the heating module in real time; raising the temperature of the etching solution in real time, and further controlling the temperature of the etching solution through PCW; therefore, the speed of the etching solution is kept consistent in the etching process of each substrate to be etched.
Certainly, because 3000 liters of etching solution can etch approximately 10000 substrates, the capacity of the etching solution supply box in the embodiment is 3000 liters, if each substrate is etched, the temperature is adjusted once, firstly, under the condition that the heating precision of the heating module temporarily does not reach 2/10000 ℃, the application discloses the following method for adjusting the temperature, which comprises the following steps:
recording the number of the substrates which are etched; the step of obtaining the compensation temperature parameter of the etching solution according to the number of the substrates comprises the following steps:
s301: when the number of the substrates reaches n pieces; outputting a preset compensation temperature; and counting is started again;
s302: when the number of the substrates does not reach n pieces, continuously counting the substrates which are etched;
the step of adjusting the etching temperature of the etching solution according to the compensation temperature parameter comprises the following steps:
s401: adjusting the etching temperature of the etching solution according to the preset compensation temperature;
where n is a natural number other than zero.
In this embodiment, the number of n substrates is taken as a stage, and the temperature is adjusted once after each n substrates is completed; the preset compensation temperature can be selected from 0.1 to 0.2 ℃; the preset compensation temperature is the accuracy that most heating modules can achieve; the temperature of the etching solution is compensated in stages, and unnecessary power loss is reduced.
Specifically, the staged compensation can be achieved by following Table 1, where Table 1 below is at a process temperature of 40 degrees, corresponding to 5000 wafers as the initial conditions, such that the etch rate is maintained at 50A/S.
Table 1: table for stepwise variation of compensation temperature with number of substrates
| Number of substrates | Temperature Compensation (. Degree. C.) | Etching Rate (A/S) |
| 1-1000 | -1 | 50 |
| 1000-2000 | -0.8 | 50 |
| 2000-3000 | -0.6 | 50 |
| 3000-4000 | -0.4 | 50 |
| 4000-5000 | -0.2 | 50 |
| 5000-6000 | 0 | 50 |
| 6000-7000 | 0.2 | 50 |
| 7000-8000 | 0.4 | 50 |
| 8000-9000 | 0.6 | 50 |
| 9000-10000 | 0.8 | 50 |
In the embodiment, 5000 pieces of etching is taken as an initial condition, and the initial temperature is compensated by minus 1 ℃ in the first stage of etching, namely 1 to 1000 pieces of etching; i.e. corresponding to 39 degrees celsius; in the second stage of etching, namely 1000 to 2000 wafers, the initial temperature is compensated to minus 0.8 ℃; corresponding to 39.2 ℃, and so on; compared with the situation that the original etching solution can only etch 5000 pieces, the temperature of the etching solution is reduced, and the etching rate of the etching solution in the early stage of use is reduced to 50A/S; after 5000 pieces of substrates are etched, the temperature is continuously increased, so that the etching rate of the 5000 pieces of substrates can be kept at 50A/S. Further, the etching rates before and after the use period of the etching solution are consistent, and further the line widths of the metal traces etched on the substrate are consistent, as shown in fig. 5, the abscissa of the line width is the number of the substrates after etching is completed, and the ordinate of the line width is the line width of the metal traces after etching is completed; the first half of fig. 5 corresponds to the substrate manufactured before the temperature is not compensated, and the data of the measurement statistics of the metal trace width of the substrate is obtained, and the second half of the substrate manufactured after the temperature is compensated, and the data of the measurement statistics of the metal trace width of the substrate is obtained.
Of course, in another embodiment, the temperature may also be raised in real time during the staging process; for example, in the first stage, the temperature is gradually increased to 39.2 ℃ from 39 ℃ to 39.2 ℃ when the temperature reaches 1000 slices, and the other stages are similar. It should be noted that the present application only takes 10000 slices as an example, and different etching solution supply tanks have different capacities; all applicable in this scheme.
The preset compensation temperature is 0.1-0.2 ℃, and the number n of the substrates is 500-1000. In the etching liquid supply box, under the condition that four placing positions are used for simultaneously etching four substrates to be etched, all etching liquid in the etching liquid supply box is completely sprayed out for 500-1000 sheets at a time; certainly because the etching solution of this application is at the in-process that sprays on one side, also can retrieve the etching solution on one side, transports the etching solution after retrieving to the etching solution supply tank in, the circulating pump in this application can make the old etching solution of new etching solution and recovery in the etching solution supply tank originally mix together, and be homogeneous mixing in addition, provides the rate of utilization of etching solution, reduce cost from this. Specifically, the step of opening the etching solution switch to spray the etching solution on the substrate to be etched further includes:
the etching solution flows back to the etching solution supply tank.
The used etching solution is mixed with the etching solution in the etching solution supply tank in the refluxing etching solution recovery process, so that the etching solution can be ensured not to be wasted, the use of the etching solution can be ensured to the maximum extent, and in actual use, the stock of the etching solution in the etching solution supply tank is more, namely, the corresponding etching solution is less when not in the etching solution supply tank; correspondingly, the amount of the recovered etching solution is also small, and the small amount of the recovered etching solution is mixed with the stored amount of the etching solution, so that the etching solution cannot be etched for one round and then for the second round; the etching rate of the corresponding etching solution is easier to control.
It should be noted that, on the premise of not affecting the implementation of the specific embodiment, the limitations of the steps involved in the present disclosure are not considered as limiting the order of the steps, and the steps written in the foregoing may be executed first, or executed later, or even executed simultaneously, and as long as the present disclosure can be implemented, all the steps should be considered as belonging to the protection scope of the present disclosure.
It should be noted that the inventive concept of the present application can form many embodiments, but the present application has a limited space and cannot be listed one by one, so that, on the premise of no conflict, any combination between the above-described embodiments or technical features can form a new embodiment, and after the embodiments or technical features are combined, the original technical effect will be enhanced
The technical solution of the present application can be widely applied to various display panels, such as TN (Twisted Nematic) display panel, IPS (In-Plane Switching) display panel, VA (Vertical Alignment) display panel, MVA (Multi-Domain Vertical Alignment) display panel, and of course, other types of display panels, such as OLED (Organic Light-Emitting Diode) display panel, and the above solution can be applied thereto.
The foregoing is a more detailed description of the present application in connection with specific alternative embodiments, and the specific implementations of the present application are not to be considered limited to these descriptions. For those skilled in the art to which the present application pertains, several simple deductions or substitutions may be made without departing from the concept of the present application, and all should be considered as belonging to the protection scope of the present application.
Claims (9)
1. An etching method of a substrate to be etched, comprising the steps of:
setting the initial temperature of the etching solution;
sequentially etching a plurality of substrates to be etched;
recording the number of the substrates which are etched; obtaining a compensation temperature parameter of the etching solution according to the number of the substrates;
adjusting the etching temperature of the etching solution according to the compensation temperature parameter;
when the number of the substrates is 10000, 5000 etched substrates are used as an initial condition, the initial temperature is 40 ℃, and the etching rate is kept at 50A/S; compensating by stages, namely compensating the initial temperature by minus 1 ℃ when etching the first stage, namely 1 to 1000 wafers, namely correspondingly 39 ℃; in the second stage of etching, namely 1000 to 2000 wafers, the initial temperature is compensated to minus 0.8 ℃, namely 39.2 ℃; by analogy, when the number of the substrates is 5000-6000, the initial temperature is adopted, namely 40 ℃; when the number of the substrates is 9000-10000, the initial temperature is compensated by 0.8 ℃, namely 40.8 ℃;
wherein the step of sequentially etching the plurality of substrates comprises:
conveying the substrate to be etched into an etching machine;
opening a switch of an etching solution supply box to spray etching solution on the substrate to be etched;
after etching for a preset time, taking out the etched substrate;
continuing to carry out the step of conveying the substrate to be etched into the etching machine;
the control module is used for heating the etching solution in the etching solution supply box and enabling the temperature of the etching solution to be fixed at a certain temperature after being heated;
the etching solution supply tank is opened only once at startup.
2. The method according to claim 1, wherein the number of substrates that have been etched is recorded; the step of obtaining the compensation temperature of the substrate to be etched according to the number of the substrates comprises the following steps:
the compensation temperature parameter increases linearly with the number of substrates.
3. The method for etching a substrate to be etched according to claim 2, wherein the step of adjusting the etching temperature of the etching solution according to the compensation temperature parameter comprises:
and adjusting the etching temperature of the etching solution in real time according to the compensation temperature parameter.
4. The method according to claim 1, wherein the etching process is carried out in a manner such that,
recording the number of the substrates which are etched; the step of obtaining the compensation temperature parameter of the etching solution according to the number of the substrates comprises the following steps:
when the number of the substrates reaches n pieces; outputting a preset compensation temperature; and counting is restarted;
when the number of the substrates does not reach n pieces, continuously counting the substrates which are etched;
the step of adjusting the etching temperature of the etching solution according to the compensation temperature parameter comprises the following steps:
adjusting the etching temperature of the etching solution according to the preset compensation temperature;
where n is a natural number other than zero.
5. The method according to claim 1, wherein the step of opening the etching solution switch to spray the etching solution on the substrate to be etched further comprises:
collecting the etching solution sprayed on the substrate to be etched;
and refluxing the etching solution to the etching solution supply tank.
6. The method as claimed in claim 4, wherein the predetermined compensation temperature is 0.1-0.2 degrees, and the number of the substrates n is 500-1000.
7. The method for etching a substrate to be etched according to claim 1, wherein the mass fraction of water in the etching solution is 16-22%; the mass fraction of the phosphoric acid is 67-73%; the mass fraction of acetic acid is 8-12%; the mass fraction of the nitric acid is 1.7-2.2%;
the etching solution is used for etching the metal layer on the glass substrate;
the metal layer is made of one or more of aluminum and molybdenum materials.
8. An etching machine using the etching method for the substrate to be etched according to any one of claims 1 to 7, comprising:
the etching solution supply module is used for providing etching solution to etch the substrate;
the substrate placing module is used for bearing the substrate;
the counting module is used for recording the number of the substrates which are etched; and
and the control module is used for adjusting the temperature of the etching solution.
9. The etcher station of claim 8, wherein the etching solution supply module comprises:
the etching solution supply box is used for storing the etching solution;
the etching solution supply pipeline is used for spraying the etching solution to the substrate to be etched on the substrate placing module;
the reflow device is used for recovering the etching liquid used on the substrate placing module;
the control module comprises:
the heating module is used for heating the etching solution in the etching solution supply box;
a circulation pump for circulating the etching solution using the etching solution supply tank;
and the cooling water module is used for maintaining the temperature of the etching liquid supply box.
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| US6399517B2 (en) * | 1999-03-30 | 2002-06-04 | Tokyo Electron Limited | Etching method and etching apparatus |
| JP4393337B2 (en) * | 2004-10-13 | 2010-01-06 | 株式会社東芝 | Semiconductor substrate processing apparatus and semiconductor device manufacturing method |
| JP4906766B2 (en) * | 2008-03-24 | 2012-03-28 | ルネサスエレクトロニクス株式会社 | Substrate processing method and substrate processing apparatus |
| JP6427166B2 (en) * | 2013-03-15 | 2018-11-21 | ティーイーエル エフエスアイ，インコーポレイティド | Processing system and method for providing a heated etchant |
| TWI821761B (en) * | 2016-05-06 | 2023-11-11 | 美商應用材料股份有限公司 | Wafer profiling for etching system |
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