CN113328036B - Ag/[ SnS 2 /PMMA]/Cu low-power-consumption resistive random access memory and preparation method thereof - Google Patents

Abstract

The invention relates to the technical field of two-dimensional materials and devices, in particular to an Ag/[SnS ₂ /PMMA]/Cu low power consumption resistive memory and a preparation method thereof. It discloses a hydrothermal method to synthesize SnS ₂ hexagonal structure nanosheets, compound it with PMMA polymer material to prepare SnS ₂ /PMMA thin film, and use the composite thin film as a resistive functional layer material to prepare Ag/[SnS ₂ /PMMA] /Cu resistive memory method. Its on-off ratio is about 10 ⁶ , and its tolerance reaches 10 ⁴ . On the basis that the above two parameters have reached a better level in 2D material resistive memory, the Set/Reset voltage is only ‑0.1V/0.14V, which is far It is lower than the RRAM prepared by the existing technology, which is beneficial to its application in wearable devices in the future. When the device changes from high resistance to low resistance, the corresponding Set current is 2.6×10 ^‑9 A, and the Set power is only 3.6× 10 ^‑10 W, so the power consumption of the device is extremely low.

Description

A kind of Ag/[SnS2/PMMA]/Cu low-power resistive memory and its preparation method

technical field

The invention relates to the technical field of two-dimensional materials and devices, in particular to an Ag/[SnS ₂ /PMMA]/Cu low-power resistive memory and a preparation method thereof.

Background technique

With the rapid development of the electronic information industry, the application requirements of low-cost, high-performance, non-volatile memory in electronic devices and logic storage units are increasing, while the traditional silicon-based information storage technology faces theoretical and physical challenges. limits.

Among many types of non-volatile memory, resistive random access memory (RRAM) has the advantages of good endurance, high density, fast writing speed, long retention time, and low operating voltage, and has become the next generation of information technology. Ideal replacement for storage devices. Finding suitable functional materials to improve the storage properties of RRAM is an important research area.

Insulating transition metal oxides are the most common resistive switching materials, but because of their poor flexibility, they are not conducive to application in the field of flexible devices. Due to its flexibility, ultra-thin, and crystal structure, two-dimensional materials have shown unique electrical, chemical, mechanical, and physical properties in the past ten years of research. Two-dimensional materials such as graphene, graphene oxide, reduced graphene oxide, transition metal dichalcogenides, and MXenes have been introduced as resistive switching layers to fabricate RRAM devices on flexible or rigid substrates. Although RRAM devices based on 2D materials have shown excellent performance, it is still a challenging work to realize a functional memory material with excellent performance in all parameters. Combination of functional layers is one of the effective ways to improve its performance. Compared with single active layers such as graphene, GO, RGO, TaOx, and MoS2, the performance of RRAM based _on composite functional layers has been greatly improved.

The development of commercial flexible wearable devices requires lower RRAM operating voltage. In order to advance the application of wearable technology, RRAM with supply voltage less than 1V is required. However, the Set of almost all RRAMs based on insulating transition metal oxides and 2D materials is higher than 1 V when the on-off ratio is greater than 10 ⁶ , the endurance is greater than 10 ⁴ , and the Set current is less than 10 ⁻⁸ A.

Adjusting the limiting current can change the low resistance value of the RRAM when it is turned on, thereby realizing the multi-level storage characteristics of the RRAM. If the switching ratio of the device is relatively low, the range of adjusting the low resistance value will be narrower, so RRAM with high switching ratio will be beneficial to realize multi-level storage function. However, when the Set voltage is less than 1V, the tolerance is greater than 10 ⁴ , the Set current is less than 10 ^-8 A, and the variation range of the limiting current regulation switching ratio is greater than 5×10 ² , almost all insulating transition metal oxides and two-dimensional materials based on The on-off ratios of the RRAMs are less than 10 ⁶ .

Contents of the invention

In view of this, the present invention provides a Ag/[SnS ₂ /PMMA]/Cu low-power resistive memory and a preparation method thereof, and the prepared resistive memory has low operating voltage, low power consumption, and high tolerance , High switching ratio characteristics.

In order to solve the problems existing in the prior art, the technical solution of the present invention is: an Ag/[SnS ₂ /PMMA]/Cu low-power resistive memory, characterized in that: said Ag/[SnS ₂ /PMMA]/ The Cu resistive variable memory includes a substrate, a bottom electrode, a resistive variable layer and a top electrode arranged sequentially from bottom to top.

Further, the substrate is a glass substrate.

Further, the bottom electrode is Ag, and the thickness of the electrode is 100-300 nm; the top electrode is Cu, and the thickness of the electrode is 100-300 nm, and the diameter of the electrode is 250 μm.

Further, the material of the resistance variable layer is a composite film of SnS ₂ /PMMA.

A preparation method of Ag/[SnS ₂ /PMMA]/Cu low-power resistive memory, characterized in that: the method steps are:

1) Dissolve thioacetamide and tin tetrachloride pentahydrate in deionized water, add glacial acetic acid dropwise, stir evenly until a transparent solution is formed, and then put it into the reaction kettle;

2) Maintain the temperature of the reactor at 150-200°C, and carry out the hydrothermal reaction for 6-24 hours;

3) After the reaction is finished, the product is washed with absolute ethanol and deionized water for 3-5 times, and then dried at a constant temperature of 80° C. to obtain the product SnS ₂ ;

4) Weighing _1-2 g of SnS2 prepared in step ₃ ) and adding it to 10-100 mL of NN dimethylformamide, and preparing SnS2 suspension by ultrasonic method;

5) Evaporating an Ag bottom electrode with a thickness of 100-300 nm on the glass substrate by vacuum evaporation coating method;

6) the SnS2 suspension prepared in step ₄ ) is prepared on the bottom electrode by a vacuum filtration method to prepare a SnS2 film, and a layer of PMMA is spin _- coated on the surface of the SnS2 film by a spin coating method _;

7) Vacuum-deposit Cu with a diameter of 250 μm and a thickness of 100-300 nm on the upper surface of the PMMA film as the top electrode.

Further, in step 1), the molar ratio of tin tetrachloride pentahydrate to thioacetamide is 1:2.5, the volume of deionized water is 50-150 mL, and the volume of glacial acetic acid is 1-10 mL.

Further, the ultrasonic method in step 4) takes 1-4 hours, and the ultrasonic power is 150-250W.

本底真空小于5×10^-4Pa、蒸镀功率为130～160W。Further, in step 5), the condition of the vacuum evaporation coating method is: the evaporation rate is

The background vacuum is less than 5×10 ^-4 Pa, and the evaporation power is 130-160W.

Further, in step 6), the volume of the SnS ₂ suspension is 0.5-3ml, the rotational speed of the spin-coating method is 4000-8000rpm, and the spin-coating time is 60-120s.

本底真空小于5×10^-4Pa、蒸镀功率为160～190W。Further, in step 7), the conditions of the vacuum evaporation are: the evaporation rate is

The background vacuum is less than 5×10 ^-4 Pa, and the evaporation power is 160-190W.

Compared with prior art, advantage of the present invention is as follows:

1) In the present invention, SnS ₂ prepared by hydrothermal method is used as the resistive switch material to prepare Ag/[SnS ₂ /PMMA]/Cu resistive switch memory, the switch ratio is about 10 ⁶ , and the tolerance reaches 10 ⁴ . These two parameters On the basis that the two-dimensional material resistive variable memory has reached a better level, the Set/Reset voltage is only 0.14V/-0.1V, which is far lower than the RRAM prepared by the existing technology, which is conducive to its future development in wearable devices. Application; when the device changes from a high-resistance state to a low-resistance state, the corresponding Set current is 2.6×10 ^{-9 A} , and the Set power is only 3.6×10 ^-10 W, indicating that the power consumption of the device is extremely low.

2) The present invention utilizes the high switching ratio exhibited by the Ag/[SnS ₂ /PMMA]/Cu resistive variable memory, changes the low resistance value of the device by limiting the current, and regulates the variation range of the switching ratio up to 5×10 ² , which can be better The realization of multi-level storage function;

3) In the present invention, SnS ₂ and PMMA form a composite functional layer to prepare Ag/[SnS ₂ /PMMA]/Cu resistive memory, there are gaps between SnS ₂ nanosheets in the SnS ₂ film, and Cu along the gap when the top Cu electrode is evaporated Deposition, causing the top Cu electrode and the bottom Ag electrode to penetrate, after the PMMA layer is spin-coated on the SnS ₂ layer, the PMMA layer can encapsulate the SnS ₂ layer on the substrate, blocking the contact between the SnS ₂ layer and the outside world, not only preventing The penetration of the top Cu electrode and the bottom Ag electrode during evaporation also improves the resistance of the RRAM.

Description of drawings:

Fig. 1 is the morphology and the structure of the SnS synthesized in embodiment ₁ nanosheets under scanning electron microscope (SEM) and transmission electron microscope (TEM); Among the figure (a) SEM, (b) TEM, (c) and (d )HRTEM;

Fig. 2 is the XRD, EDX, XPS and Raman spectrum analysis result of the SnS synthesized in the embodiment ₁ nanosheet; Among the figure (a) XRD, (b) and (c) XPS, (d) Raman spectrum;

Fig. 3 is the structure and performance of Ag/[SnS ₂ /PMMA]/Cu resistive memory in embodiment 1; Among the figure (a) the schematic diagram of structure, (b) the side section SEM picture of device, (c) IV curve, (d) forward double logarithmic IV curve, (e) reverse double logarithmic IV curve, (f) high and low resistance statistical chart;

Fig. 4 is the multilevel resistive change characteristic of Ag/[SnS ₂ /PMMA]/Cu resistive change memory in embodiment 1; Among the figure (a) IV curve figure under different limiting currents, (b) high and low under different limiting currents Resistance chart;

Fig. 5 is the resistive switching characteristics of the Ag/[SnS ₂ /PMMA]/Cu resistive memory in Example 2; in the figure (a) IV curve, (b) high and low resistance statistics.

Detailed ways

In order to further understand the present invention, the technical solutions provided by the present invention will be described in detail below in conjunction with the examples, and the protection scope of the present invention is not limited by the following examples.

An Ag/[SnS ₂ /PMMA]/Cu low-power resistive variable memory of the present invention, as shown in (a) and (b) of Figure 3, includes a substrate, a bottom electrode, and a resistive variable layer arranged in sequence from bottom to top and the top electrode;

The above substrate is a glass substrate; the bottom electrode is Ag, and the thickness of the electrode is 100-300nm; the material of the resistive layer is SnS ₂ /PMMA composite film; the top electrode is Cu, the thickness of the electrode is 100-300nm, and the diameter is 250μm.

Example 1:

The steps of a preparation method of Ag/[SnS ₂ /PMMA]/Cu low-power resistive memory are as follows:

1) Dissolve 5.0 mmol of tin tetrachloride pentahydrate (SnCl ₄ 5H ₂ O) in 70 mL of dilute glacial acetic acid solution (3 mL of glacial acetic acid + 67 mL of deionized water), and stir evenly;

2) After adding 12.5mmol of thioacetamide (CH ₃ CSNH ₂ ), continue to stir for 10 minutes, transfer the stirred transparent solution to a 100mL stainless steel autoclave with PTFE lining, seal it well, and put it into an electric heating constant temperature drum In an air drying oven, react at 180°C for 12 hours;

3) Naturally cool to room temperature after the reaction, repeat ultrasonic washing with deionized water and absolute ethanol for 3 times, then centrifuge, and dry the sample under vacuum conditions at 80°C to obtain SnS ₂ nanosheets;

4) Weigh 1g of SnS ₂ sample and add it to 100ml of N,N-dimethylformamide, and disperse the SnS ₂ powder by ultrasonic method to prepare SnS ₂ suspension, the ultrasonic time is 3h, and the ultrasonic power is 250W;

本底真空小于5×10^-4Pa、蒸镀功率为 140W；5) Ag with a thickness of 220nm is evaporated on the glass substrate by the vacuum evaporation coating method as the bottom electrode, and the vacuum evaporation conditions are: the evaporation rate is

The background vacuum is less than 5×10 ^-4 Pa, and the evaporation power is 140W;

₆ ) Take 1ml of the SnS2 suspension and prepare a SnS2 resistive layer film _on the bottom electrode by vacuum filtration, and spin coat a layer _on the surface of the SnS2 film under the conditions of 6000rpm and 70s by spin coating method PMMA;

本底真空小于 5×10^-4Pa、蒸镀功率为180W。最后采用吉利时(keithely)4200-SCS半导体特性分析仪进行阻变特性测试，限制电流为1×10^-3A。7) On the SnS ₂ /PMMA resistive layer film, Cu with a diameter of 250 μm and a thickness of 220 nm was evaporated as the top electrode by vacuum filtration method. The conditions of vacuum evaporation were: the evaporation rate was

The background vacuum is less than 5×10 ^-4 Pa, and the evaporation power is 180W. Finally, a keithely 4200-SCS semiconductor characteristic analyzer was used to test the resistive switching characteristics, and the limiting current was 1×10 ^-3 A.

This embodiment provides a method for preparing an Ag/[SnS ₂ /PMMA]/Cu RRAM with low operating voltage, high endurance, and high switching ratio. For the best embodiment of the present invention,

Fig. 1 is the SnS prepared by the hydrothermal method in embodiment ₁ The morphology and structure of the powder under the scanning electron microscope (SEM) and the transmission electron microscope (TEM), it can be seen that the prepared SnS _The powder has a side length equal to 20～ The 50nm hexagonal nanosheet has about 15 layers (thickness is about 10nm), and its atomic structure is a 2H structure arranged in a honeycomb shape.

Fig. ₂ is the composition of the SnS2 powder synthesized in embodiment 1; By the XRD pattern of Fig. ₂ (a), it can be seen that the main diffraction peaks of the prepared SnS2 nanosheets are consistent with the hexagonal structure SnS2 in the standard card (JCPDS _No. 23-0677), which indicates that the as _- prepared SnS2 nanosheets have a hexagonal structure. The chemical composition and bonding structure of the as _- prepared SnS2 nanosheets were analyzed by x-ray photoelectron spectroscopy (XPS), as shown in Figure 2(b) and (c). Due to the strong spin-orbit splitting of the Sn element, the two main energy level peaks of Sn 3d _5/2 and Sn3d _3/2 are located at 486.59eV and 495.03eV, respectively, as shown in Figure 2(b). The difference between the two main energy level peaks in the figure is Indicates the spin-orbit splitting energy of Sn, and it can be calculated that the spin-orbit splitting energy of Sn is 8.44eV, which is a typical value of Sn ⁴⁺ orbital in SnS ₂ . The two main energy level peaks of S 2p _3/2 and S 2p _1/2 are located at 161.94eV and 163.03 eV, respectively, as shown in Figure 2(c), and the spin-orbit splitting energy of S can be calculated to be about 1.09eV. Raman spectroscopy can be used to quantitatively analyze the layer number of _SnS2 nanosheets. The A _1g Raman frequencies of one-layer, two-layer, three-layer, four-layer and bulk SnS ₂ are 304.6, 307.0, 308.9, 309.5 and 310.8cm ^-1 , respectively. Figure 2(d) is the Raman spectrum of the prepared SnS ₂ nanosheets. It can be seen that there is only one characteristic peak at 311.1cm ^-1 in the Raman spectrum, which should be the A _1g of SnS ₂ peak. The number of layers for preparing SnS ₂ nanosheets is about 15, and the Raman frequency corresponding to the A _1g peak is almost the same as that of bulk SnS ₂ (310.8cm ^-1 ).

In the present invention, SnS ₂ nanosheets prepared by a hydrothermal method are combined with PMMA films to form a SnS ₂ /PMMA composite film as a resistive variable layer, and an Ag/[SnS ₂ /PMMA]/Cu resistive variable memory is prepared.

FIG. 3 is the resistive switching characteristic of the RRAM in the first embodiment. Figure 3(a) is a schematic diagram of the device, and the device is Ag electrode, SnS ₂ film, PMMA film and Cu electrode from bottom to top. Figure 3(b) is a side-section SEM image of the device. The thickness of the Ag/[SnS ₂ /PMMA]/CuAg electrode is about 250nm, the thickness of the SnS ₂ film is about 900nm, and the thickness of the PMMA film is about 180nm. The thickness is about 250nm. Figure 3(c) is the IV curve. The Set voltage of the device is 0.14V, the Reset voltage is -0.1V, and the operating voltage is much less than 1V. When the device changes from high resistance to low resistance, the Set current is 2.6×10 ^-9 A, and the Set power is only 3.6×10 ^{- 10} W, indicating that the power consumption of the device is extremely low. Figure 3(d) and (e) are the log-log coordinate IV curves of the positive bias region and the negative bias region, and the log-log coordinate I-V curve of the Ag/[SnS ₂ /PMMA]/Cu resistive memory The slope value ~1 indicates that the transition from the high resistance state (HRS) to the low resistance state (LRS) is controlled by the conductive filament model. Figure 3(f) is a statistical diagram of high and low resistance values, from which it can be seen that it can perform stable resistance switching between the high resistance state (HRS) and the low resistance state (LRS). After about 1×10 ⁴ on/off cycles, the on/off resistance ratio remains basically stable, centered around 1×10 ⁶ . Comprehensively considering the switching ratio, tolerance, power consumption and Set/Reset voltage of the device, the comprehensive performance of the Ag/[SnS ₂ /PMMA]/Cu resistive memory in Example 1 is very excellent.

The setting range of the limiting current is 1×10 ^-5 to 5×10 ^-3 A when the resistive switching memory prepared in Example 1 is tested using a Keithely 4200-SCS semiconductor characteristic analyzer.

Changing the size of the limiting current can regulate the low resistance value of RRAM, and Fig. 5 is the multi-level resistive switching characteristic of Ag/[SnS ₂ /PMMA]/Cu resistive switching memory in embodiment 2, and Fig. 5 (a) is under different limiting currents From the IV curve, it can be seen that the device exhibits good resistive memory characteristics under the condition of 1×10 ^-5 A, 5×10 ^-4 A, and 5×10 ^-3 A limited current, and the Set/Reset voltage is low. Figure 5(b) is a statistical chart of high and low resistance values under different limiting currents. It can be seen that under the limiting current of different parameters, the high resistance value when the device is not turned on remains basically unchanged, while the low resistance value after the conduction There will be changes. Six different low-resistance states can still be clearly distinguished, which demonstrates the feasibility of regulating the low-resistance value of Ag/[SnS ₂ /PMMA]/Cu RRAM by limiting the current. Under the conditions of the highest limiting current (5×10 ^-3 A) and the lowest limiting current (1×10 ^-5 A), the ratio of the low resistance value is about 5×10 ² , and the variation range of the limiting current control switching ratio is about 5× 10 ² , can better realize the multi-level storage function.

Example 2:

The steps of a preparation method of Ag/[SnS ₂ /PMMA]/Cu low-power resistive memory are as follows:

1) Dissolve 8.0 mmol of tin tetrachloride (SnCl ₄ 5H ₂ O) in 100 mL of dilute glacial acetic acid solution (5 mL of glacial acetic acid + 112 mL of deionized water), and stir evenly;

2) After adding 20mmol of thioacetamide (CH ₃ CSNH ₂ ), continue to stir for 10 minutes, transfer the stirred transparent solution to a 150mL stainless steel autoclave lined with polytetrafluoroethylene, seal it well, and put it into an electric heating constant temperature blasting In a drying oven, react at 190°C for 10h;

3) Naturally cool to room temperature after the reaction, ultrasonically wash with deionized water and absolute ethanol for 5 times, centrifuge, and dry the sample under vacuum at 80°C to obtain SnS ₂ nanosheets;

4) Weigh 1g of SnS ₂ sample and add it to 100ml of N,N-dimethylformamide, and disperse the SnS ₂ powder by ultrasonic method to prepare SnS ₂ suspension, the ultrasonic time is 3h, and the ultrasonic power is 250W;

本底真空小于5×10^-4Pa、蒸镀功率为150 W；5) The vacuum evaporation coating method is used to evaporate Ag with a thickness of 200nm on the glass substrate as the bottom electrode. The vacuum evaporation conditions are: the evaporation rate is

The background vacuum is less than 5×10 ^-4 Pa, and the evaporation power is 150 W;

6) Take 2ml of the SnS ₂ suspension and prepare a SnS ₂ resistive layer film on the bottom electrode by vacuum filtration. And adopt the spin-coating method to spin _- coat a layer of PMMA on the SnS2 film surface under the condition of 7000rpm rotating speed and 60s time;

本底真空小于5×10^-4 Pa、蒸镀功率为170W。最后采用吉利时(keithely)4200-SCS半导体特性分析仪进行阻变特性测试，，限制电流为1×10^-3A。7) On the SnS ₂ /PMMA resistive layer film, Cu with a diameter of 250 μm and a thickness of 200 nm was evaporated as the top electrode by vacuum filtration method. The conditions of vacuum evaporation were: the evaporation rate was

The background vacuum is less than 5×10 ^-4 Pa, and the evaporation power is 170W. Finally, a keithely 4200-SCS semiconductor characteristic analyzer is used to test the resistive switching characteristics, and the limiting current is 1×10 ^-3 A.

FIG. 5 shows the resistive switching characteristics of the Ag/[SnS ₂ /PMMA]/Cu resistive memory in Example 2. FIG. Figure 5(a) is the IV curve. The Set voltage of the device is 0.16V, the Reset voltage is -0.09v, and the operating voltage is far less than 1V. Figure 5(b) is a statistical diagram of high and low resistance values, from which it can be seen that it can perform stable resistance switching between the high resistance state (HRS) and the low resistance state (LRS). The on/off resistance ratio remained stable after about 1400 on/off cycles. The high-to-low resistance switching ratio of the Ag/[SnS ₂ /PMMA]/Cu RRAM is about 10 ⁶ .

The above is only a preferred embodiment of the present invention, and is not intended to limit the protection scope of the present invention. It should be pointed out that those skilled in the art can make some improvements and modifications to it without departing from the principles of the present invention. All should be regarded as the protection scope of the present invention.

Claims (6)

1. A preparation method of Ag/[SnS ₂ /PMMA]/Cu low-power resistive variable memory, characterized in that: the Ag/[SnS ₂ /PMMA]/Cu resistive variable memory includes sequentially setting from bottom to top The substrate, the bottom electrode, the resistive layer and the top electrode; the substrate is a glass substrate; the bottom electrode is Ag, and the thickness of the electrode is 100-300nm; the top electrode is Cu, and the thickness of the electrode is 100 nm. ~300nm, diameter 250μm; the material of the resistive layer is SnS ₂ /PMMA composite film; Described method step is: 1) Dissolve thioacetamide and tin tetrachloride pentahydrate in deionized water, add glacial acetic acid dropwise, stir evenly until a transparent solution is formed, and then put it into the reaction kettle; 2) Maintain the temperature of the reactor at 150-200°C, and carry out the hydrothermal reaction for 6-24 hours; 3) Naturally cool to room temperature after the reaction, repeat ultrasonic washing with deionized water and absolute ethanol for 3-5 times, then centrifuge, and dry the sample under vacuum conditions at 80°C to obtain SnS ₂ nanosheets; 4) Weighing _1-2 g of SnS2 prepared in step ₃ ) and adding it to 10-100 mL of NN dimethylformamide, and preparing SnS2 suspension by ultrasonic method; 5) Evaporating an Ag bottom electrode with a thickness of 100-300 nm on the glass substrate by vacuum evaporation coating method; 6) the SnS2 suspension prepared in step ₄ ) is prepared on the bottom electrode by a vacuum filtration method to prepare a SnS2 film, and a layer of PMMA is spin _- coated on the surface of the SnS2 film by a spin coating method _; 7) Vacuum-deposit Cu with a diameter of 250 μm and a thickness of 100-300 nm on the upper surface of the PMMA film as the top electrode. 2. the preparation method of a kind of Ag/[SnS ₂ /PMMA]/Cu low power consumption resistive variable memory according to claim 1, is characterized in that: in step 1) tin tetrachloride pentahydrate and thioacetamide The molar ratio is 1:2.5, the volume of deionized water is 50-150mL, and the volume of glacial acetic acid is 1-10mL. 3. A method for preparing Ag/[SnS ₂ /PMMA]/Cu low-power resistive memory according to claim 1 or 2, characterized in that: the time of the ultrasonic method in step 4) is 1 to 4 hours, The ultrasonic power is 150-250W. 4. the preparation method of a kind of Ag/[SnS ₂ /PMMA]/Cu low power consumption resistive memory according to claim 3, is characterized in that: the condition of vacuum evaporation coating method in step 5) is: evaporation rate for

The background vacuum is less than 5×10 ^{- 4} Pa, and the evaporation power is 130-160W. 5. A kind of preparation method of Ag/[SnS ₂ /PMMA]/Cu low power consumption resistive memory according to claim 4, it is characterized in that: in step 6), the volume of SnS ₂ suspension is 0.5～3mL, rotate The rotational speed of the gluing method is 4000-8000rpm, and the spin-coating time is 60-120s. 6. a kind of preparation method of Ag/[SnS ₂ /PMMA]/Cu low power consumption resistive memory according to claim 5, it is characterized in that: in step 7), the condition of described vacuum evaporation is: evaporation Plating rate is

The background vacuum is less than 5×10 ^-4 Pa, and the evaporation power is 160-190W.

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