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CN113410597A - Low-temperature infrared filter - Google Patents

Low-temperature infrared filter Download PDF

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Publication number
CN113410597A
CN113410597A CN202110516504.9A CN202110516504A CN113410597A CN 113410597 A CN113410597 A CN 113410597A CN 202110516504 A CN202110516504 A CN 202110516504A CN 113410597 A CN113410597 A CN 113410597A
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China
Prior art keywords
filter
low
infrared
temperature
absorption part
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CN202110516504.9A
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Chinese (zh)
Inventor
王小川
陆勤龙
胡来平
丁晓杰
宾峰
张亚辉
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China Electronics Technology Group Corp No 16 Institute
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China Electronics Technology Group Corp No 16 Institute
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Priority to CN202110516504.9A priority Critical patent/CN113410597A/en
Publication of CN113410597A publication Critical patent/CN113410597A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/207Hollow waveguide filters

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Abstract

本发明涉及一种低温红外滤波器,包括滤波器腔体、安装在滤波器腔体中的滤波组件以及分别安装在滤波器腔体两端开口处的输入接头与输出接头。滤波组件包括填充在滤波器腔体中的红外线吸收部以及贯穿安装在红外线吸收部中且两端分别与输入接头、输出接头相连的内导体。本发明通过在信号通路上加入低温红外滤波器,能够将寄生声子、光子准粒子滤除,达到保护量子比特的目的。该低温红外滤波器可工作于液氦温区以下,采用合适介电常数的高匹配的可浇铸环氧树脂吸波材料制成的红外线吸收部作为滤波器的主体,能有效吸收微波通信传输路径中夹杂的红外波。

Figure 202110516504

The invention relates to a low-temperature infrared filter, comprising a filter cavity, a filter assembly installed in the filter cavity, and an input connector and an output connector respectively installed at the openings at both ends of the filter cavity. The filter assembly includes an infrared absorption part filled in the filter cavity and an inner conductor installed through the infrared absorption part and connected to the input connector and the output connector respectively at both ends. The invention can filter out parasitic phonons and photon quasi-particles by adding a low-temperature infrared filter on the signal path, so as to achieve the purpose of protecting qubits. The low-temperature infrared filter can work below the liquid helium temperature region. The infrared absorption part made of a high-matching castable epoxy wave absorbing material with a suitable dielectric constant is used as the main body of the filter, which can effectively absorb the transmission path of microwave communication. Infrared waves mixed in.

Figure 202110516504

Description

Low-temperature infrared filter
Technical Field
The invention relates to the technical field of microwave radio frequency communication, in particular to a low-temperature infrared filter.
Background
Quantum computers are computers that follow the laws of quantum mechanics, perform high-speed mathematical and logical operations, and process quantum information. However, high efficiency and weakness coexist, a superconducting qubit chip in a quantum computer works in an mK temperature region, quantum coherence of the superconducting qubit chip is easily influenced by unbalanced quasi-particles in the environment, and each line connecting the chip is likely to introduce the quasi-particles, so that the qubit is damaged.
Disclosure of Invention
The invention aims to provide a low-temperature infrared filter which can filter out parasitic phonons and photon quasi-particles and protect qubits.
In order to achieve the purpose, the invention adopts the following technical scheme:
a low-temperature infrared filter comprises a filter cavity, a filtering component arranged in the filter cavity, and an input connector and an output connector which are respectively arranged at openings at two ends of the filter cavity; the filter assembly comprises an infrared absorption part filled in the cavity of the filter and an inner conductor which is arranged in the infrared absorption part in a penetrating way, and two ends of the inner conductor are respectively connected with the input connector and the output connector.
Furthermore, two end openings of the filter cavity are respectively provided with an insulating dielectric plate, and two ends of the inner conductor respectively penetrate through the two insulating dielectric plates and then are connected with the input joint and the output joint.
Furthermore, the infrared absorption part is positioned between the two insulating medium plates.
Furthermore, the infrared absorption part adopts castable epoxy resin wave-absorbing material.
Further, the inner conductor is made of beryllium bronze.
Furthermore, the insulating medium plate is made of polytetrafluoroethylene materials.
Further, the input connector and the output connector adopt any one of SMA, N or DIN connectors. Preferably, the input connector and the output connector adopt double-female SMA connectors.
Furthermore, the filter cavity is provided with an injection hole and a vent hole.
According to the technical scheme, the low-temperature infrared filter is added to the signal path, so that parasitic phonons and photon quasi-particles can be filtered, and the purpose of protecting qubits can be achieved. The low-temperature infrared filter can work below a liquid helium temperature region, and an infrared absorption part made of a high-matching castable epoxy resin wave-absorbing material with a proper dielectric constant is used as a main body of the filter, so that infrared waves mixed in a microwave communication transmission path can be effectively absorbed. And the device of the low-temperature infrared filter is small in size, easy to assemble and debug and stable in performance at low temperature, and can well meet the requirements of the current related systems.
Drawings
Fig. 1 is a schematic structural view of a low-temperature infrared filter according to the present invention.
Wherein:
1. input connector, 2, output connector, 3, filter cavity, 4, infrared absorption portion, 5, insulating dielectric plate, 6, inner conductor, 7, air vent, 8, filling hole.
Detailed Description
The invention is further described below with reference to the accompanying drawings:
as shown in fig. 1, the low-temperature infrared filter includes a filter cavity 3, a filter assembly installed in the filter cavity 3, and an input connector 1 and an output connector 2 respectively installed at openings at two ends of the filter cavity 3. The filtering component comprises an infrared absorption part 4 filled in the cavity of the filter and an inner conductor 6 which is arranged in the infrared absorption part 4 in a penetrating way and two ends of which are respectively connected with the input connector 1 and the output connector 2. The low-temperature infrared filter is used for filtering infrared light of bad quasi-particles generated in a signal path when a microwave communication system works.
Furthermore, two end openings of the filter cavity 3 are respectively provided with an insulating dielectric plate 5, and two ends of the inner conductor 6 respectively penetrate through the two insulating dielectric plates 5 and then are connected with the input connector 1 and the output connector 2.
Further, the infrared absorption part 4 is located between the two insulating dielectric sheets 5.
Further, the input connector 1 and the output connector 2 adopt any one of SMA, N or DIN connectors. Preferably, in order to reduce the size of the filter, the input connector 1 and the output connector 2 adopt double-negative SMA connectors.
Furthermore, the infrared absorption part 4 adopts a castable epoxy resin wave-absorbing material, and the mixing ratio of the material is related to the insertion loss and out-of-band rejection of the filter. Preferably, the castable epoxy resin wave-absorbing material adopts ECCOSORB CR series, and the castable epoxy resin wave-absorbing material has extremely low loss in a C wave band and sharply increases loss in a frequency band of Ka and above. According to the huge difference of the loss of the castable epoxy resin wave-absorbing material in the C wave band, the Ka wave band and the frequency bands above, the infrared radiation of the mK temperature zone is selectively filtered. By adjusting the proportion of different castable epoxy resin wave-absorbing materials, for example, by adjusting the mixing proportion of ECCOSORB CR-110 and stycast2850, preferably, the proportion of ECCOSORB CR-110 and stycast2850 is set to 10: 1. The ECCOSORB CR-110 is low-pass frequency (C wave band), high-frequency resistance (more than Ka wave band), stycast2850 is extremely low in insertion loss and can relieve low-temperature stress, so that the insertion loss and out-of-band suppression of the filter can be controlled, infrared radiation is effectively eliminated, and the filter is easy to produce, assemble and debug.
Furthermore, the filter cavity 3 is made of copper materials, and the structure is stable and reliable.
Further, the inner conductor 6 is made of beryllium bronze.
Further, the insulating medium plate 5 is made of polytetrafluoroethylene. The insulating dielectric sheet 5 serves as a support member for supporting the inner conductor 6 and fixing the infrared absorbing section 4.
Furthermore, the filter cavity 3 is provided with an injection hole 8 and a vent hole 7. The injection hole is used for injecting the castable epoxy resin wave-absorbing material into the filter cavity, and in the injection process, gas in the filter cavity is exhausted through the vent hole. ECCOSORB CR-110 and stycast2850 are mixed, injected into the filter cavity from the injection hole by a syringe to form an infrared absorption part, then the infrared filter is placed into a vacuum cavity, vacuumized, residual gas in the mixed gel is removed, and after standing for 24 hours, the infrared filter is placed into liquid nitrogen to ensure no damage, thus the preparation is finished.
The parasitic phonon and photon quasi-particle at low temperature come from infrared heat radiation, a common cavity filter cannot filter out the parasitic phonon and photon quasi-particle, and the castable epoxy resin wave-absorbing material (ECCOSORB CR-110) adopted by the invention can absorb the part of infrared heat radiation at low temperature. In addition, the invention can relieve low-temperature stress and adjust loss by adding stycast2850 in castable epoxy resin wave-absorbing material (ECCOSORB CR-110).
Considering that the castable epoxy resin wave-absorbing material (ECCOSORB CR-110) has extremely low loss in a C wave band and sharply increases loss in a frequency band of Ka and above; and the heat conduction epoxy resin material stycast2850 full frequency channel loss is low to can alleviate stress, consequently, through mixing the two according to certain proportion, can realize the infrared filtering characteristic under the low temperature. The low-temperature filtering characteristic of the device is realized by mixing the castable epoxy resin, for example, ECCOSORB CR-110 and stycast2850 are mixed according to the proportion of 10:1 or other proportions, the insertion loss and out-of-band inhibition of the filter can be controlled, the influence of low-temperature stress can be relieved by mixing the stycast2850 (the stress can influence the reliability of the device and can also cause frequency band offset), and the infrared radiation is effectively eliminated.
The above-mentioned embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various modifications and improvements of the technical solution of the present invention by those skilled in the art should fall within the protection scope defined by the claims of the present invention without departing from the spirit of the present invention.

Claims (8)

1.一种低温红外滤波器,其特征在于:包括滤波器腔体、安装在滤波器腔体中的滤波组件以及分别安装在滤波器腔体两端开口处的输入接头与输出接头;所述滤波组件包括填充在滤波器腔体中的红外线吸收部以及贯穿安装在红外线吸收部中且两端分别与输入接头、输出接头相连的内导体。1. a low-temperature infrared filter, it is characterized in that: comprise filter cavity, the filter assembly that is installed in the filter cavity and the input joint and the output joint that are respectively installed at the openings of both ends of the filter cavity; the described The filter assembly includes an infrared absorption part filled in the filter cavity and an inner conductor installed through the infrared absorption part and connected to the input connector and the output connector at both ends. 2.根据权利要求1所述的一种低温红外滤波器,其特征在于:所述滤波器腔体的两端开口处分别安装有一绝缘介质板,所述内导体的两端分别穿过两块绝缘介质板后与输入接头、输出接头相连。2 . The low-temperature infrared filter according to claim 1 , wherein an insulating dielectric plate is respectively installed at the openings at both ends of the filter cavity, and the two ends of the inner conductor pass through two blocks respectively. 3 . The insulating medium board is connected with the input connector and the output connector. 3.根据权利要求2所述的一种低温红外滤波器,其特征在于:所述红外线吸收部位于两块绝缘介质板之间。3 . The low-temperature infrared filter according to claim 2 , wherein the infrared absorption part is located between two insulating dielectric plates. 4 . 4.根据权利要求1所述的一种低温红外滤波器,其特征在于:所述红外线吸收部采用可浇铸环氧树脂吸波材料。4 . The low temperature infrared filter according to claim 1 , wherein the infrared absorption part adopts a castable epoxy resin wave absorbing material. 5 . 5.根据权利要求1所述的一种低温红外滤波器,其特征在于:所述内导体采用铍青铜材料。5 . The low-temperature infrared filter according to claim 1 , wherein the inner conductor is made of beryllium bronze. 6 . 6.根据权利要求1所述的一种低温红外滤波器,其特征在于:所述绝缘介质板采用聚四氟乙烯材料。6 . The low-temperature infrared filter according to claim 1 , wherein the insulating dielectric plate is made of polytetrafluoroethylene. 7 . 7.根据权利要求1所述的一种低温红外滤波器,其特征在于:所述输入接头和输出接头采用SMA、N或DIN接头中的任意一种。7 . The low-temperature infrared filter according to claim 1 , wherein the input connector and the output connector are any one of SMA, N or DIN connectors. 8 . 8.根据权利要求1所述的一种低温红外滤波器,其特征在于:所述滤波器腔体上开设有注入孔和通气孔。8 . The low-temperature infrared filter according to claim 1 , wherein the filter cavity is provided with an injection hole and a ventilation hole. 9 .
CN202110516504.9A 2021-05-12 2021-05-12 Low-temperature infrared filter Pending CN113410597A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115581019A (en) * 2022-11-07 2023-01-06 南京乾海通信技术有限公司 A very low-temperature high-density microwave low-pass filter bundle assembly
CN115693057A (en) * 2022-11-07 2023-02-03 南京乾海通信技术有限公司 Extremely low temperature high density microwave infrared filter cluster subassembly
CN116706481A (en) * 2023-08-07 2023-09-05 合肥国家实验室 Absorption filter

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110026614A1 (en) * 2005-08-04 2011-02-03 Allen Edward H Sensor Systems and Methods Using Entangled Quanta
US20140266513A1 (en) * 2013-03-15 2014-09-18 International Business Machines Corporation Coaxial transmission line slot filter with absorptive matrix
US20170093015A1 (en) * 2015-09-28 2017-03-30 International Business Machines Corporation Low-loss infrared filter for microwave measurement which integrates a distributed bragg reflector into a microwave transmission line
CN112305652A (en) * 2019-07-26 2021-02-02 南京大学 an infrared filter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110026614A1 (en) * 2005-08-04 2011-02-03 Allen Edward H Sensor Systems and Methods Using Entangled Quanta
US20140266513A1 (en) * 2013-03-15 2014-09-18 International Business Machines Corporation Coaxial transmission line slot filter with absorptive matrix
US20170093015A1 (en) * 2015-09-28 2017-03-30 International Business Machines Corporation Low-loss infrared filter for microwave measurement which integrates a distributed bragg reflector into a microwave transmission line
CN112305652A (en) * 2019-07-26 2021-02-02 南京大学 an infrared filter

Non-Patent Citations (1)

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Title
张礼博: "超导量子比特的高精度操控研究", 《中国优秀硕士学位论文全文数据库》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115581019A (en) * 2022-11-07 2023-01-06 南京乾海通信技术有限公司 A very low-temperature high-density microwave low-pass filter bundle assembly
CN115693057A (en) * 2022-11-07 2023-02-03 南京乾海通信技术有限公司 Extremely low temperature high density microwave infrared filter cluster subassembly
CN116706481A (en) * 2023-08-07 2023-09-05 合肥国家实验室 Absorption filter
CN116706481B (en) * 2023-08-07 2023-11-03 合肥国家实验室 Absorptive filter

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Application publication date: 20210917