CN113507295B - Application method of fully-integrated broadband configurable front end based on SOI CMOS process - Google Patents
Application method of fully-integrated broadband configurable front end based on SOI CMOS process Download PDFInfo
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Abstract
The invention provides an application method of a fully-integrated broadband configurable front end based on an SOI CMOS process, which combines an input matching network of a low-noise amplifier under different working frequency bands with a radio frequency switch to form a configurable matching network unit and then is connected with the input end of the low-noise amplifier, a frequency detection circuit detects the working frequency of an input signal, converts the detected frequency signal into a voltage signal and provides the voltage signal to a control circuit, and the control circuit provides the control signal for branch switching under different working frequency bands for the whole fully-integrated broadband configurable radio frequency front end. The invention overcomes the defect that the low-noise amplifier manufactured by adopting the SOI CMOS process cannot carry out broadband 50 ohm matching because the input impedance of the grid electrode of the low-noise amplifier is overlarge.
Description
Technical Field
The invention belongs to the technical field of radio frequency front ends of wireless communication, and particularly relates to an application method of a fully-integrated broadband configurable front end based on an SOI CMOS (silicon on insulator) process.
Background
With the wide application of wireless communication equipment in the fields of medical health, smart home, engineering construction, security and protection systems and the like, the wireless communication technology has been developed rapidly, and the development of radio frequency front ends tends to be multifunctional and integrated gradually in order to meet the trend of miniaturization of terminal equipment.
Currently, as shown in fig. 1, a radio frequency Front End Module (FEM) used in a base station/mobile phone, etc. mostly uses an SOI CMOS process for a control circuit and a radio frequency switch, and mostly uses a gallium arsenide process for a Low Noise Amplifier (LNA). And then, integrally packaging radio frequency front-end chips of different processes on the same circuit substrate through high-integration SiP (System in Package).
The main reason that the control circuit and the radio frequency switch adopt an SOI CMOS process and the low noise amplifier adopts a GaAs process is the limitation of the SOI process.
Compared with the GaAs process which is convenient for realizing the broadband low-noise amplifier, the SOI CMOS process characteristic causes the input impedance of the transistor grid to be in a high impedance state, and the impedance of the transistor grid is in an ascending trend along with the improvement of the process node. Correspondingly, as the process node is increased, the noise figure of the transistor shows a downward trend. Therefore, when the LNA design is performed by using the SOI CMOS process, the low noise design is emphasized, and the high node process is preferred, so that the input impedance of the transistor is large, and the impedance change coefficient of the impedance matching network is very large. If a multistage matching network is adopted for broadband matching, the loss brought by the broadband matching network far exceeds the noise advantage brought by a high-node process, so that only the simplest circuit topology structure is generally selected for narrowband matching.
The wideband LNA chip adopting the GaAs process and the wideband radio frequency switch adopting the SOI CMOS process are subjected to SiP integration, so that not only can further integration and miniaturization be realized, but also the process reliability is reduced due to the complexity of the FEM product assembly process, and the further reduction of the radio frequency front end cost is hindered.
Disclosure of Invention
The invention provides an application method of a fully-integrated broadband configurable front end based on an SOI CMOS (silicon on insulator) process, aiming at the defects in the prior art, the invention combines a radio frequency switch and a low noise amplifier in output matching networks of different frequency bands based on the SOI CMOS process, and is connected with the low noise amplifier after frequency band gating is carried out through a configurable control device, thereby realizing the full integration of the radio frequency switch and the low noise amplifier in a broadband.
An application method of a fully integrated broadband configurable front end based on an SOI CMOS process comprises the following steps:
step 1: constructing a fully integrated broadband configurable front end by adopting an SOI CMOS process; the fully-integrated broadband configurable antenna comprises a common signal end COM1bCoupling unit, frequency detection circuit FC1bControl circuit CON1bMultipath radio frequency front end configuration unit and low noise amplifier LNA1bAnd a signal output terminal OUT1b(ii) a The specific construction method comprises the following steps:
connecting the common signal terminal COM1bSequentially coupled with a coupling unit, a multi-channel radio frequency front end configuration unit and a Low Noise Amplifier (LNA)1bAnd a signal output terminal OUT1bConnecting;
the multi-channel radio frequency front end configuration unit comprises N channels of configurable matching networks which are connected in parallel; connecting the control circuit CON1bThe output ends of the N configurable matching networks are respectively connected with the N configurable matching networks and used for controlling the on-off of the configurable matching networks;
the frequency detection circuit FC1bThe frequency detection device comprises M paths of frequency detection units connected in parallel; the input ends of the M frequency detection units are connected with the coupling unit and used for receiving an input frequency signal IN1c(ii) a Outputting the M paths of the output end OUT of the frequency detection unit1c-OUTMcAre all connected with the control circuit CON1bThe input ends of the two-way valve are connected;
n and M are positive integers greater than or equal to 1, and M is greater than or equal to N;
step 2: dividing N independent narrow-band regions without overlapping regions according to different frequency bands of input radio frequency signals, and respectively corresponding N paths of parallel configurable matching networks to the N independent narrow-band regions without overlapping regions;
and step 3: setting parameters of M parallel frequency detection units, and enabling N independent narrow-band regions without overlapping regions to respectively enable the corresponding unique frequency detection units to be in a high-impedance state through parameter setting;
and 4, step 4: is carried out in practiceRadio frequency signal input using frequency detection circuit FC1bDetecting the operating frequency of the input signal transmitted through the coupling unit, converting the detected frequency signal into a voltage signal, and transmitting the voltage signal to the control circuit CON1b；
And 5: control circuit CON1bAnd controlling the communication of corresponding branches in the N paths of configurable matching networks connected in parallel according to the received voltage signal to form a radio frequency front end structure corresponding to the frequency band of the input radio frequency signal to process and transmit the signal.
To better implement the present invention, further, each of the configurable matching networks includes a first switch SWi1bA first inductor Li1bA first capacitor Ci1bA second switch SWi2b(ii) a The subscript i =1, 2, 3, · N;
the first switch SWi1bIs connected to the output of the coupling unit, connects the first switch SWi1bOutput terminal of the first inductor Li1bA second switch SWi2bLNA (low noise amplifier)1bConnecting;
the first capacitor Ci1bIs connected with the first inductor L after being groundedi1bAnd a second switch SWi2bIn the meantime.
In order to better implement the present invention, further, each of the frequency detection units includes a band-pass filter and a detector;
connecting the input end of the band-pass filter with the coupling unit, and connecting the output end of the band-pass filter with a detector; the output end of the detector is the output end of the frequency detection unit.
In order to better implement the invention, further, a single-pole double-throw radio frequency switch SPDT is further arranged between the coupling unit and the N-path parallel configurable matching network1b；
The single-pole double-throw radio frequency switch SPDT is connected with a power supply1bThe input end of the switch is connected with a coupling unit, and the SPDT is a single-pole double-throw radio frequency switch1bOne output end of the N-path matching network is connected with the N-path configurable matching network in parallel.
To better implement the present invention, further, the coupling unit employs a Coupler1b。
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) the invention combines the input matching network of the low noise amplifier under different working frequency bands with the radio frequency switch to form a configurable matching network unit which is then connected with the input end of the low noise amplifier. The frequency detection circuit detects the working frequency of an input signal, converts the detected frequency signal into a voltage signal and provides the voltage signal to the control circuit, and the control circuit provides a control signal for branch switching under different working frequency bands for the whole fully-integrated broadband configurable radio frequency front end, so that the defect that broadband 50 ohm matching cannot be performed due to overlarge grid input impedance of a low noise amplifier manufactured by an SOI CMOS process is overcome.
(2) The invention realizes the unification of the control circuit, the frequency detection circuit, the low-noise amplifier and the configurable matching network unit on the SOI CMOS process platform, and completes the full integration of the broadband configurable radio frequency front end in the SOI CMOS process. The radio frequency front end can realize high integration, high reliability and low cost by means of the characteristics of an SOI CMOS process, and is more beneficial to the integration and miniaturization development of the radio frequency front end.
Drawings
FIG. 1 illustrates a conventional RF front end module;
FIG. 2 is a schematic diagram of a fully integrated wideband configurable RF front end according to the present invention;
FIG. 3 is a schematic diagram of a frequency detection circuit according to the present invention;
FIG. 4 is a schematic diagram illustrating the comparison of the input return loss of the RF front-end module according to the present invention and the conventional RF front-end module;
FIG. 5 is a diagram illustrating the comparison between the noise figure of the RF front-end module and the noise figure of the conventional RF front-end module.
Detailed Description
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and therefore should not be considered as a limitation to the scope of protection. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1:
the embodiment proposes a fully integrated wideband configurable rf front end based on SOI CMOS process, as shown in fig. 2 and fig. 3, comprising a basic control circuit, a frequency detection circuit, a low noise amplifier and a configurable matching network unit, wherein,
the control circuit is a control circuit CON1b. Frequency detection circuit signal output terminal OUT1cSignal output terminal OUT2cUntil the signal output terminal OUTMcAnd control circuit CON1bInput terminal connection, control circuit CON1bThe output end is connected with the configurable matching network unit and provides a branch switching control signal and a radio frequency switch control signal for the configurable matching network unit;
the frequency detection circuit comprises a band-pass filter BP1cBandpass filter BP2cUntil the band-pass filter BPMcDetector DET1cDetector DET2cUntil the detector DETMc. Band-pass filter BP1cInput terminal and signal input terminal IN1cConnected, band-pass filter BP1cOutput terminal and detector DET1cInput terminal connection and inspectionWave filter DET1cOutput terminal and signal output terminal OUT1cConnecting; band-pass filter BP2cInput terminal and AND signal input terminal IN1cConnected, band-pass filter BP2cOutput terminal and detector DET2cInput terminal connected, detector DET2cOutput terminal and signal output terminal OUT2cConnecting; up to band-pass filter BPMcInput terminal and AND signal input terminal IN1cConnected, band-pass filter BPMcOutput terminal and detector DETMcInput terminal connected, detector DETMcOutput terminal and signal output terminal OUTMcConnecting; m is a positive integer greater than or equal to 1;
the low noise amplifier is LNA1bLNA1bThe input end is connected with the output end of the configurable matching network unit, and the low noise amplifier LNA1bOutput terminal and signal output terminal OUT1bConnecting;
the configurable matching network element comprises a Coupler1bSPDT (single pole double throw) radio frequency switch1bRadio frequency switch SW11bRadio frequency switch SW21bUntil the radio frequency switch SWN1bInductance L11bInductor L21bUp to the inductance LN1bCapacitor C11bCapacitor C21bUp to the capacitance CN1bRadio frequency switch SW12bRadio frequency switch SW22bTo the radio frequency switch SWN2b. The Coupler1bInput end and common signal end COM1bCoupling, Coupler1bSPDT with straight-through end and single-pole double-throw1bInput terminal connection, Coupler1bCoupling terminal and signal input terminal IN of frequency detection circuit1cSPDT (single pole double throw) radio frequency switch1bFirst output terminal and output terminal OUT2bConnection, radio frequency switch SW11bFirst terminal of (1) and single-pole double-throw (SPDT)1bIs connected to the radio frequency switch SW11bSecond terminal and inductor L11bIs connected to the first terminal of the inductor L11bSecond terminal and capacitor C11bFirst terminal and radio frequency switch SW12bFirst of allEnd-connected, radio frequency switch SW12bSecond terminal and low noise amplifier LNA1bThe input ends are connected; radio frequency switch SW21bFirst terminal of (1) and single-pole double-throw (SPDT)1bIs connected to the radio frequency switch SW21bSecond terminal and inductor L21bIs connected to the first terminal of the inductor L21bSecond terminal and capacitor C21bFirst terminal and radio frequency switch SW22bFirst end connected, radio frequency switch SW22bSecond terminal and low noise amplifier LNA1bThe input ends are connected; up to the radio frequency switch SWN1bFirst terminal of (1) and single-pole double-throw (SPDT)1bIs connected to the second output terminal of the radio frequency switch SWN1bSecond terminal and inductor LN1bIs connected to a first terminal of an inductor LN1bSecond terminal and capacitor CN1bAnd the radio frequency switch SWN2bFirst end connected, radio frequency switch SWN2bSecond terminal and low noise amplifier LNA1bThe input ends are connected, N is a positive integer greater than or equal to 1, and M is greater than or equal to N.
The invention provides a fully-integrated broadband configurable radio frequency front end based on an SOI CMOS process, which is characterized in that an input matching network of a low-noise amplifier under different working frequency bands is combined with a radio frequency switch to form a configurable matching network unit and then the configurable matching network unit is connected with the input end of the low-noise amplifier. The frequency detection circuit detects the working frequency of an input signal, converts the detected frequency signal into a voltage signal and provides the voltage signal to the control circuit, and the control circuit provides a control signal for branch switching under different working frequency bands for the whole fully-integrated broadband configurable radio frequency front end, so that the defect that broadband 50 ohm matching cannot be performed due to overlarge grid input impedance of a low noise amplifier manufactured by adopting an SOI CMOS process is overcome. The control circuit, the low-noise amplifier and the configurable matching network unit are unified on an SOI CMOS process platform, and the full integration of the broadband configurable radio frequency front end on the SOI CMOS process is completed. The radio frequency front end can realize high integration, high reliability and low cost by means of the characteristics of an SOI CMOS process, and is more beneficial to the integration and miniaturization development of the radio frequency front end.
Example 2:
the embodiment provides an application method of a fully integrated broadband configurable front end based on an SOI CMOS process, as shown in fig. 2 and 3, including the following steps:
step 1: constructing a fully integrated broadband configurable front end by adopting an SOI CMOS process; the fully-integrated broadband configurable antenna comprises a common signal end COM1bCoupling unit, frequency detection circuit FC1bControl circuit CON1bMultipath radio frequency front end configuration unit and low noise amplifier LNA1bAnd a signal output terminal OUT1b(ii) a The specific construction method comprises the following steps:
connecting the common signal terminal COM1bSequentially coupled with a coupling unit, a multi-channel radio frequency front end configuration unit and a Low Noise Amplifier (LNA)1bAnd a signal output terminal OUT1bConnecting;
the multi-channel radio frequency front end configuration unit comprises N channels of configurable matching networks which are connected in parallel; connecting the control circuit CON1bThe output ends of the N configurable matching networks are respectively connected with the N configurable matching networks and used for controlling the on-off of the configurable matching networks;
the frequency detection circuit FC1bThe frequency detection device comprises M paths of frequency detection units connected in parallel; the input ends of the M paths of frequency detection units are connected with the coupling unit and used for receiving an input frequency signal IN1 c; outputting the M paths of the output end OUT of the frequency detection unit1c-OUTMcAre all connected with the control circuit CON1bThe input ends of the two-way valve are connected;
n and M are positive integers greater than or equal to 1, and M is greater than or equal to N;
step 2: dividing N independent narrow-band regions without overlapping regions according to different frequency bands of input radio frequency signals, and respectively corresponding N paths of parallel configurable matching networks to the N independent narrow-band regions without overlapping regions;
and step 3: setting parameters of M parallel frequency detection units, and enabling N independent narrow-band regions without overlapping regions to respectively enable the corresponding unique frequency detection units to be in a high-impedance state through parameter setting;
and 4, step 4: for actual RF signal input, frequency detection circuit FC is used1bDetecting the operating frequency of the input signal transmitted through the coupling unit, converting the detected frequency signal into a voltage signal, and transmitting the voltage signal to the control circuit CON1b；
And 5: control circuit CON1bAnd controlling the communication of corresponding branches in the N paths of configurable matching networks connected in parallel according to the received voltage signal to form a radio frequency front end structure corresponding to the frequency band of the input radio frequency signal to process and transmit the signal.
The working principle is as follows: the input matching network of the low noise amplifier under different working frequency bands is combined with the radio frequency switch to form a configurable matching network unit which is then connected with the input end of the low noise amplifier. The frequency detection circuit detects the working frequency of an input signal, converts the detected frequency signal into a voltage signal and provides the voltage signal to the control circuit, and the control circuit provides a control signal for branch switching under different working frequency bands for the whole fully-integrated broadband configurable radio frequency front end, so that the defect that broadband 50 ohm matching cannot be performed due to overlarge grid input impedance of a low noise amplifier manufactured by adopting an SOI CMOS process is overcome. The control circuit, the low-noise amplifier and the configurable matching network unit are unified on an SOI CMOS process platform, and the full integration of the broadband configurable radio frequency front end on the SOI CMOS process is completed. The radio frequency front end can realize high integration, high reliability and low cost by means of the characteristics of an SOI CMOS process, and is more beneficial to the integration and miniaturization development of the radio frequency front end.
Other parts of this embodiment are the same as those of embodiment 1, and thus are not described again.
Example 3:
this embodiment is based on any of the above embodiments 1-2, as shown in fig. 2, fig. 3, fig. 4, and fig. 5, to better understand the present invention, and the working principle thereof will be described in detail below:
according to the division of the wireless network frequency band by 3GPP, the wireless network is actually divided into a plurality of mutually independent and non-overlapping narrow-band regions in the wide frequency band, for example, the FR1 frequency range specified by the 5G/NR frequency band is 410 MHz-7125 MHz, and the FR1 frequency range is composed of 38 narrow-band frequency bands of n1, n2 … n86 and n90, for example, the n78 frequency band is 3.3 GHz-3.8 GHz, and the n79 frequency band is 4.4 GHz-5 GHz, etc. The broadband matching in the invention provides possibility due to the discontinuity of the distribution of the working frequency of the radio frequency signal in the broadband.
When the RF signal to be processed is a received signal, an input enable signal is provided from the outside to the control circuit CON1bAt this time, the control circuit CON1bOutput control signal to control SPDT1bInput end of and single-pole double-throw radio frequency switch SPDT1bThe second output end of the switch is in a conducting state, and the single-pole double-throw radio frequency switch SPDT1bInput end of and single-pole double-throw radio frequency switch SPDT1bIs in off state;
operating frequency band of fNThrough COM1bAfter entering the RF front end, it first enters the Coupler1bInput terminal of (1):
by means of a Coupler1bThe signal of the coupling end enters the frequency detection circuit, because the frequency band of the broadband signal to be processed is known, if the number of the sub-frequency bands contained in the whole frequency band is M, the signal frequency can be identified only by setting M band-pass filters, and if the band-pass filter BP is adopted, the signal frequency can be identified1cBandpass filter BP2cUntil the band-pass filter BPMcThe band-pass filter in accordance with the working frequency band of the signal is BPMc，BPMcPresenting a low resistance to the signal while the bandpass filter BP1cBandpass filter BP2cUntil the band-pass filter BP（M-1）cPresenting a high impedance to the signal. So the signal passes through the band-pass filter to be BPMC and enters the detector DETMcDetector DETMcThe voltage signal is output by a signal output end OUT after the signal is detectedMcOutput to the control circuit CON1b。
In the configurable matching network unit, since the number of sub-bands included in the wideband is known, only N (the number of detection channels is greater than the number of sub-bands in the actual band, M is greater than or equal to N) matching branches need to be set in the configurable matching network unit, each matching branch corresponds to a narrowband frequency, and a simple matching topology structure which can be realized by adopting an SOI CMOS process is adopted on the branch, so that good matching in the narrowband range can be realized. The configurable matching network unit formed by the N preset sub-frequency band matching network branches can realize the full coverage of the frequency range of the radio frequency signal in a broadband.
At the output terminal OUT of the received frequency detection circuitMcAfter the given control signal, the control circuit CON1bAnd after the level shift, decoding and other operations are carried out on the signals, a gating signal of a radio frequency branch in the configurable matching network unit is given out, so that the radio frequency signals pass through a preset matching network branch corresponding to the frequency of the radio frequency signals. If the preset matching network branch corresponding to the working frequency band fN of the rf signal in the configurable matching network unit is N, the control circuit CON at this time1bA radio frequency switch SW for providing branch gating signals in the configurable matching network elementN1bConducting, radio frequency switch SWN2bOn, radio frequency switch SW in the first branch11bSwitch-off, radio frequency switch SW12bTurning off; radio frequency switch SW in the second branch21bSwitch-off, radio frequency switch SW22bTurning off; up to the radio frequency switch SW in the N-1 branch(N-1)1bSwitch-off, radio frequency switch SW(N-1)2bAnd switching off to ensure that all branches except the radio frequency branch N corresponding to the radio frequency signal working frequency band fN are in a high impedance state.
By means of a Coupler1bSignal entering single-pole double-throw radio frequency switch SPDT (single pole double throw)1bBecause of the single-pole double-throw SPDT RF switch1bInput end of and single-pole double-throw radio frequency switch SPDT1bThe first output end of the switch is in an off state, and the single-pole double-throw radio frequency switch SPDT1bInput end of and single-pole double-throw radio frequency switch SPDT1bThe second output end of the first switch is in a conducting state, and the radio frequency signal passes through the SPDT1bInput end of, single-pole double-throw radio frequency switch SPDT1bAnd then to the configurable matching network unit. At this time, the radio frequency branch corresponding to the working frequency band fN of the radio frequency signal is removedEach branch except the path N is in a high-resistance state, so that the radio-frequency signal sequentially passes through the radio-frequency switch SWN1bSeries inductor LN1bParallel capacitor CN1bRadio frequency switch SWN2bRear-entry Low Noise Amplifier (LNA)1bPassing through a low noise amplifier LNA1bAfter the signal is amplified, the signal is outputted from a signal output end OUT1bAnd (6) outputting.
Through a control circuit CON1bUnder different working frequency bands, corresponding matching branches in the configurable matching network unit are switched and controlled, and good adaptability of the fully-integrated configurable radio frequency front end in a wide frequency band can be achieved.
Fig. 4 is a diagram illustrating the comparison of the input return loss of the rf front-end module according to the present invention and the conventional rf front-end module. The set working frequency bands comprise three frequency bands of 2.3 GHz-2.7 GHz, 3.4 GHz-3.8 GHz and 4.5 GHz-4.9 GHz, so that the N value of the number of branches of the configurable matching network unit is 3 at the moment. The curve of the relationship between the return loss and the frequency of the input of the traditional radio frequency front-end module is shown as triangle, the curve of the relationship between the return loss and the frequency when the circuit is switched to the matching branch corresponding to the frequency band of 2.3 GHz-2.7 GHz is 31 branches, the curve of the relationship between the return loss and the frequency when the circuit is switched to the matching branch corresponding to the frequency band of 3.4 GHz-3.8 GHz is 32 branches, and the curve of the relationship between the return loss and the frequency when the circuit is switched to the matching branch corresponding to the frequency band of 4.5 GHz-4.9 GHz is 33 branches. As can be seen from fig. 3, compared with the conventional rf front-end module, the configurable rf front-end provided by the present invention can not only realize normal operation in a wide frequency band in the corresponding operating frequency bands of 2.3GHz to 2.7GHz, 3.4GHz to 3.8GHz, and 4.5GHz to 4.9GHz, but also obtain a better input return loss curve in a specific operating frequency band because each configurable matching network branch only needs to match a narrow band, compared with the conventional rf front-end module that needs to perform wideband input impedance matching.
FIG. 5 is a diagram illustrating the comparison between the noise figure of the RF front-end module and the noise figure of the conventional RF front-end module. The set working frequency bands comprise three frequency bands of 2.3 GHz-2.7 GHz, 3.4 GHz-3.8 GHz and 4.5 GHz-4.9 GHz, so that the N value of the number of branches of the configurable matching network unit is 3 at the moment. The curve is a relation curve between the noise coefficient and the frequency of a traditional radio frequency front-end module, the curve is a relation curve between the noise coefficient and the frequency of the invention, the curve is 31 when the branch is switched to a matching branch corresponding to a frequency band of 2.3 GHz-2.7 GHz, the curve is 32 when the branch is switched to a matching branch corresponding to a frequency band of 3.4 GHz-3.8 GHz, and the curve is 33 when the branch is switched to a matching branch corresponding to a frequency band of 4.5 GHz-4.9 GHz. As can be seen from fig. 4, compared with the conventional rf front-end module, the configurable rf front-end provided by the present invention can not only realize normal operation in a wide frequency band in the corresponding operating frequency bands of 2.3GHz to 2.7GHz, 3.4GHz to 3.8GHz, and 4.5GHz to 4.9GHz, but also obtain a better noise coefficient curve in a specific operating frequency band because each configurable matching network branch only needs to match a narrow band, compared with the conventional rf front-end module that needs to perform wideband noise matching.
Other parts of this embodiment are the same as any of embodiments 1-2 described above, and thus are not described again.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications and equivalent variations of the above embodiments according to the technical spirit of the present invention are included in the scope of the present invention.
Claims (3)
1. A full-integrated broadband configurable front end application method based on an SOI CMOS process is characterized by comprising the following steps:
step 1: constructing a fully integrated broadband configurable front end by adopting an SOI CMOS process; the fully-integrated broadband configurable antenna comprises a common signal end COM1bCoupling unit, frequency detection circuit FC1bControl circuit CON1bMultipath radio frequency front end configuration unit and low noise amplifier LNA1bAnd a signal output terminal OUT1b(ii) a The specific construction method comprises the following steps:
connecting the common signal terminal COM1bSequentially connected with coupling unit and multiple pathsRadio frequency front end configuration unit and low noise amplifier LNA1bAnd a signal output terminal OUT1bConnecting;
the multi-channel radio frequency front end configuration unit comprises N channels of configurable matching networks which are connected in parallel; connecting the control circuit CON1bThe output ends of the N configurable matching networks are respectively connected with the N configurable matching networks and used for controlling the on-off of the configurable matching networks;
the frequency detection circuit FC1bThe frequency detection device comprises M paths of frequency detection units connected in parallel; the input ends of the M paths of frequency detection units are connected with the coupling unit and used for receiving an input frequency signal IN1 c; outputting the M paths of the output end OUT of the frequency detection unit1c-OUTMcAre all connected with the control circuit CON1bThe input ends of the two-way valve are connected;
n and M are positive integers greater than or equal to 1, and M is greater than or equal to N;
each of the configurable matching networks includes a first switch SWi1bA first inductor Li1bA first capacitor Ci1bA second switch SWi2b(ii) a The subscript i =1, 2, 3, · N;
the first switch SWi1bIs connected to the output of the coupling unit, connects the first switch SWi1bOutput terminal of the first inductor Li1bA second switch SWi2bLNA (low noise amplifier)1bConnecting;
the first capacitor Ci1bIs connected with the first inductor L after being groundedi1bAnd a second switch SWi2bTo (c) to (d);
a single-pole double-throw radio frequency switch SPDT is arranged between the coupling unit and the N paths of configurable matching networks which are connected in parallel1b；
The single-pole double-throw radio frequency switch SPDT is connected with a power supply1bThe input end of the switch is connected with a coupling unit, and the SPDT is a single-pole double-throw radio frequency switch1bOne output end of the N-path matching network is connected with the N-path configurable matching networks in parallel;
step 2: dividing N independent narrow-band regions without overlapping regions according to different frequency bands of input radio frequency signals, and respectively corresponding N paths of parallel configurable matching networks to the N independent narrow-band regions without overlapping regions;
and step 3: setting parameters of M parallel frequency detection units, and enabling N independent narrow-band regions without overlapping regions to respectively enable the corresponding unique frequency detection units to be in a high-impedance state through parameter setting;
and 4, step 4: for actual RF signal input, frequency detection circuit FC is used1bDetecting the operating frequency of the input signal transmitted through the coupling unit, converting the detected frequency signal into a voltage signal, and transmitting the voltage signal to the control circuit CON1b；
And 5: control circuit CON1bAnd controlling the communication of corresponding branches in the N paths of configurable matching networks connected in parallel according to the received voltage signal to form a radio frequency front end structure corresponding to the frequency band of the input radio frequency signal to process and transmit the signal.
2. The method as claimed in claim 1, wherein each frequency detection unit comprises a band-pass filter and a detector;
connecting the input end of the band-pass filter with the coupling unit, and connecting the output end of the band-pass filter with a detector; the output end of the detector is the output end of the frequency detection unit.
3. The method as claimed in claim 1 or 2, wherein the coupling unit is Coupler1b。
Priority Applications (1)
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| CN116455359B (en) * | 2023-06-15 | 2023-09-01 | 成都明夷电子科技有限公司 | Broadband numerical control delay line |
| CN117639724B (en) * | 2023-12-05 | 2024-12-17 | 航天科工通信技术研究院有限责任公司 | Microwave input/output matching driving circuit based on CMOS |
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