CN113539870B - Method for testing electrical characteristics of a switch component on a wafer - Google Patents

Abstract

The present invention relates to a method for testing the electrical characteristics of a switch component on a wafer, and relates to a wafer-level testing technology. By controlling a switch component connected in parallel with a switch component to be tested to be turned on, a first electrode of the turned-on switch component is electrically connected to a second electrode, and the first electrode of the switch component to be tested is electrically connected to the second electrode of the turned-on switch component. A second probe contacts the second electrode of the turned-on switch component, which is equivalent to contacting the first electrode of the switch component to be tested. At the same time, the first probe contacts the second electrode of the switch component to be tested. In this way, the electrical characteristics of the switch component to be tested can be tested by the first probe and the second probe. Because the first probe and the second probe are probes corresponding to the switch component to be tested and the second electrode of the turned-on switch component respectively, the electrical characteristics test path of the switch component to be tested is shortened, the parasitic inductance is greatly reduced, and there is no need to change the structure of the testing device.

Description

Method for testing electrical characteristics of a switch component on a wafer

Technical Field

The invention relates to wafer-level testing technology, and in particular to a method for testing the electrical characteristics of a switch component on a wafer.

Background technique

In semiconductor integrated circuit technology, various components in semiconductor integrated circuits are formed on wafers through semiconductor integrated circuit manufacturing processes. After wafer manufacturing is completed, wafer testing is very important. The test equipment contacts the external contact electrodes of the components and tests their electrical characteristics to determine whether the components on the wafer meet the factory standards. After the electrical characteristics test is completed, the components are separated by a cutting machine, and then packaged and sold. Therefore, electrical characteristics testing is crucial.

Summary of the invention

The present invention provides a method for testing the electrical characteristics of a switch component on a wafer, wherein the wafer includes a plurality of switch components, each of which includes a first electrode and a second electrode, and the first electrodes of the plurality of switch components are connected to each other, and the method is characterized in that it includes: when testing the electrical characteristics of a first switch component among the plurality of switch components, controlling at least one second switch component among the plurality of switch components to be turned on, so that the first electrode of the turned-on second switch component is electrically connected to the second electrode; obtaining electrical parameters between the second electrode of the first switch component and the second electrode of the second switch component to obtain the electrical characteristics of the first switch component;

A testing device is provided, which includes a probe card, on which a plurality of probes are arranged. The probe card is moved so that a first probe contacts a second electrode of a first switch component, and a second probe contacts a second electrode of a second switch component, and an electrical parameter between the first probe and the second probe is tested to obtain an electrical parameter between the second electrode of the first switch component and the second electrode of the second switch component, and an electrical characteristic of the first switch component is obtained. The testing device also includes a wafer chuck, which supports a wafer through a first surface of the wafer, and the first electrodes of the plurality of switch components are all located on the first surface of the wafer, and the second electrodes of the plurality of switch components are all located on the second surface of the wafer, and the second surface of the wafer and the first surface of the wafer are two opposite surfaces of the wafer. The testing device also includes a switch component driving circuit, which is used to output a switch control signal to the plurality of switch components on the wafer, and control at least one second switch component among the plurality of switch components to be turned on.

Furthermore, the probes are arranged on a side of the probe card facing the second surface of the wafer.

Furthermore, both the first probe and the second probe are located within a region of the probe card that directly faces the second surface of the wafer.

Furthermore, the second switch component is a switch component arranged adjacent to the first switch component on the wafer.

Furthermore, the second switch component is a switch component arranged adjacent to the first switch component in the X-axis or Y-axis direction on the wafer.

Furthermore, the second switch component is a switch component arranged adjacent to the first switch component at an oblique angle on the wafer.

Furthermore, there is at least one switching component between the second switching component and the first switching component.

Furthermore, there are multiple second switch components that are turned on, and the second probe includes multiple probes, wherein the multiple second probes are in one-to-one contact with the second electrodes of the multiple switch components that are turned on.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic diagram of a typical wafer testing system structure.

FIG. 2 is a schematic diagram of the circuit principle of the MOSFET on the wafer.

FIG. 3 is a schematic diagram of an electrical characteristics testing device for a switch component on a wafer according to an embodiment of the present invention.

FIG4 is a schematic diagram showing the distribution of switch components on a wafer.

FIG. 5 is a schematic diagram of a circuit of switch components on a wafer.

Detailed ways

The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

It should be understood that the present invention can be implemented in different forms and should not be interpreted as being limited to the embodiments proposed herein. On the contrary, providing these embodiments will make the disclosure thorough and complete, and the scope of the present invention will be fully conveyed to those skilled in the art. In the accompanying drawings, for clarity, the size and relative size of the layer and the zone may be exaggerated, and the same reference numerals represent the same elements from beginning to end. It should be understood that when an element or layer is referred to as "on ... ", "adjacent to ... ", "connected to " or "coupled to " other elements or layers, it can be directly on other elements or layers, adjacent to it, connected or coupled to other elements or layers, or there can be an intermediate element or layer. On the contrary, when an element is referred to as "directly on ... ", "directly adjacent to ... ", "directly connected to " or "directly coupled to " other elements or layers, there is no intermediate element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, zones, layers and/or parts, these elements, components, zones, layers and/or parts should not be limited by these terms. These terms are only used to distinguish an element, component, zone, layer or part from another element, component, zone, layer or part. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.

Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "on" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present invention. When used herein, the singular forms "one", "an" and "said/the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and/or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and/or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and/or groups. When used herein, the term "and/or" includes any and all combinations of the relevant listed items.

Please refer to FIG1 , which is a schematic diagram of a typical wafer test system structure. The wafer test system includes a wafer test device, as shown in FIG1 , and the wafer test device generally includes a probe card 110 , and a plurality of probes are provided on one side of the probe card 110 , such as a first probe 121 , a second probe 122 , and a third probe 123 . The wafer test system also includes a probe, which fixes the wafer 210 on the wafer chuck 220 , and contacts the probe with the electrodes of the components on the wafer 210 to perform an electrical characteristics test, and applies a current or voltage to the electrodes of each component to measure its characteristics when performing the electrical characteristics test.

MOSFET (field effect transistor), IGBT (Insulated Gate Bipolar Transistor: insulated gate bipolar transistor) and other components are commonly used in semiconductor integrated circuits. They usually include electrodes on the second side of the wafer (often called chip surface electrodes) and electrodes on the first side of the wafer (often called chip back electrodes). As shown in Figure 1, for MOSFET, the second side of the wafer includes the source (S) and the gate (G), while the drain (D) is often set on the first side of the wafer. The second side of the wafer and the first side of the wafer are two opposite sides of the wafer. Testing the dynamic electrical characteristics of MOSFET requires testing the electrical characteristics between the source located on the second surface of the wafer and the drain located on the first surface of the wafer. In order to test the electrical characteristics of components with electrodes formed on both sides of the wafer, a conductive supporting surface 221 is provided on the wafer chuck 220. The supporting surface 221 contacts the first surface of the wafer and leads the electrode on the first surface of the wafer (such as the drain of MOSFET) to outside the contact area between the wafer 210 and the wafer chuck 220. As shown in FIG. 1, the drain D is led out to a position 2211 on the supporting surface 221. The position 2211 is located outside the contact area between the wafer 210 and the wafer chuck 220. In this way, the third probe 123 corresponding to the drain can achieve electrical contact with the drain D located on the first surface of the wafer through the contact position 2211, and the first probe 121 is connected to the drain D located on the first surface of the wafer. The source S of the second surface is contacted to realize the test of the dynamic performance of the MOSFET. In addition, the second probe 122 can contact the gate G of the MOSFET. The test path on the wafer and the probe card is shown as the dotted line in Figure 1. The circuit test path can refer to the dotted line in the circuit principle diagram of the MOSFET on the wafer in Figure 2. Since the drain of the MOSFET needs to be led out of the contact area between the wafer 210 and the wafer chuck 220, and the third probe 123 corresponding to the drain needs to be set at the edge position of the probe card 110 so that the third probe 123 can be electrically connected to the drain of the MOSFET, the length of the test path is increased, and the parasitic inductance is relatively large. Therefore, there is a problem of measurement errors in high-frequency measurement and dynamic measurement, and it is impossible to properly perform wafer inspection with the required accuracy.

In order to test the electrical characteristics of components having electrodes formed on both sides of a wafer, an embodiment of the present invention provides an electrical characteristics testing device for a switch component on a wafer. Specifically, please refer to FIG. 3 , which is a schematic diagram of an electrical characteristics testing device for a switch component on a wafer according to an embodiment of the present invention, and please refer to FIG. 4 and FIG. 5 , FIG. 4 is a distribution schematic diagram of the switch components on the wafer, and FIG. 5 is a circuit schematic diagram of the switch components on the wafer. Specifically, an electrical characteristic test device for a switch component on a wafer according to an embodiment of the present invention comprises: a wafer 310, which is placed on a wafer chuck 320, wherein the wafer 310 comprises a plurality of switch components, each of the plurality of switch components comprises a first electrode and a second electrode, the first electrodes of the plurality of switch components are connected to each other, and the first electrodes of the plurality of switch components are located on the first surface of the wafer, the wafer chuck 320 supports the wafer 310 through the first surface of the wafer, the second electrodes of the plurality of switch components are located on the second surface of the wafer, the second surface of the wafer and the first surface of the wafer are two opposite surfaces of the wafer, and the first electrode and the second electrode of the plurality of switch components can be electrically connected through the control of a switch control signal; a probe card 330, wherein a plurality of probes are arranged on a side of the probe card 330 facing the second surface of the wafer, wherein a first probe 331 contacts the second electrode of a first switch component among the plurality of switch components, and a second probe 332 contacts the second electrode of a second switch component among the plurality of switch components; a switch component drive circuit 400, which is connected to the plurality of switch components on the wafer and is used to output the switch control signal.

In one embodiment, when testing the electrical characteristics of the first switching component, the switch control signal controls the second switching component to be in an on state, reads the signals output from the first probe 331 and the second probe 332, and obtains the electrical characteristics of the first switching component based on the signals output from the first probe 331 and the second probe 332.

In this way, by controlling the second switch component to be in a conducting state, the first electrode of the second switch component is electrically connected to the second electrode, and because the first electrodes of the plurality of switch components are connected to each other, the first electrode of the first switch component is electrically connected to the second electrode of the second switch component, and the second probe contacting the second electrode of the second switch component is equivalent to contacting the first electrode of the first switch component, and at the same time, the first probe contacts the second electrode of the first switch component, so that the electrical characteristics of the first switch component can be tested by the first probe and the second probe, because the first probe and the second probe correspond to the second electrodes of the first switch component and the second switch component located on the second surface of the wafer respectively, and the probes are arranged on the probe card at the first surface of the wafer. On the side where the two surfaces face each other, there is no need to set the probe outside the contact area between the wafer 310 and the wafer chuck 320, and there is no need to lead the first electrode through the conductive support surface 321 on the wafer chuck 320, so the electrical characteristic test path of the first switch component is shortened. Specifically, the test path is from the first probe 331 to the second electrode of the first switch component, then to the second electrode of the second switch component, and then to the second probe 332, as shown by the dotted line in FIG3, or as shown by the dotted line 600 in FIG5. Compared with the prior art, the test path length is greatly shortened, and the parasitic inductance is greatly reduced, so as to reduce the measurement error of high-frequency measurement and dynamic measurement, so as to perform wafer inspection with higher accuracy. Moreover, the above test method does not need to change the structure of the test device, and only needs to turn on a switch component on the wafer, and the first electrode of the switch component is electrically connected to the first electrode of the switch component to be tested, so that the electrical characteristics of the switch component to be tested can be tested by testing the parameters between the second electrode of the switch component and the second electrode of the switch component to be tested.

Furthermore, as shown in FIG. 3 , the first probe 331 and the second probe 332 are both located within the region of the probe card 330 that directly faces the wafer 310 , so that the path can be further tested.

Among them, the first electrodes of the plurality of switch components on the wafer 310 are connected to each other, and the plurality of switch components can be controlled by a switch control signal to make the first electrode electrically connected to the second electrode, that is, the plurality of switch components on the wafer 310 are connected in parallel. Specifically, in one embodiment, as shown in FIG3 , the plurality of switch components are MOSFETs (field effect transistors), the first electrode is a drain (D, such as the drain D11 of the first switch component and the drain D12 of the second switch component), the second electrode is a source (S, such as the source S11 of the first switch component and the source S12 of the second switch component), and the plurality of MOSFETs also have a third electrode, which is a gate (G, such as the gate G11 of the first switch component and the gate G12 of the second switch component), the third electrode is located on the second side of the wafer, and the gate (G) of the MOSFET can receive a switch control signal to turn on the MOSFET, so that the drain (D) and the source (S) of the MOSFET are electrically connected. As described above, the gate of a MOSFET is turned on by receiving a switch control signal, and the electrical characteristics of the MOSFET to be tested are tested by testing the electrical parameters between the source of the MOSFET and the source of the MOSFET to be tested. Specifically, in one embodiment, the multiple switching components are IGBTs (Insulated Gate Bipolar Transistor), then the first electrode is the collector (C), the second electrode is the emitter (E), and the multiple IGBTs also have a third electrode, which is the gate (G). The third electrode is located on the second surface of the wafer. The gate (G) of the IGBT can receive a switch control signal to turn on the IGBT, so that the collector (C) and the emitter (E) of the IGBT are electrically connected. As described above, the gate (G) of an IGBT is turned on by receiving a switch control signal, and the electrical characteristics of the IGBT to be tested are tested by testing the electrical parameters between the emitter of the IGBT and the emitter of the IGBT to be tested. Specifically, in one embodiment, the plurality of switch components are diodes, the first electrode is an anode, the second electrode is a cathode, or the first electrode is a cathode, the second electrode is an anode, and the diode can receive a positive voltage to be turned on, that is, the switch control signal is a positive voltage applied between the anode and cathode of the diode, so that the anode and cathode of the diode are electrically connected. As described above, the electrical characteristics of the diode to be tested are tested by testing the electrical parameters between the anode or cathode of the diode that is turned on and the anode or cathode of the diode to be tested.

Specifically, in one embodiment, referring to FIG. 4 , a plurality of switch components on a wafer 310 are arranged adjacent to each other on the wafer. As shown in FIG. 4 , the switch components are arranged adjacent to each other in three rows and three columns. During testing, the switch components arranged adjacent to the switch components to be tested on the wafer can be controlled to be turned on, and the electrical characteristics of the switch components to be tested are tested by testing the electrical parameters between the second electrode of the turned-on switch components and the second electrode of the switch components to be tested. Since the second electrode of the switch components adjacent to the switch components to be tested is close to the second electrode of the switch components to be tested, the test path can be shortened to the maximum extent. As shown in FIG. 4 , the electrical characteristics of the switch components M11 to be tested are pre-tested, and the switch components M12 adjacent to the switch components M11 on the wafer can be controlled to be turned on, and the electrical characteristics of the switch components M11 can be tested by testing the electrical parameters between the second electrode of the switch components M11 and the second electrode of the switch components M12. Preferably, the switch components arranged adjacent to the wafer and the switch components to be tested in the X-axis or Y-axis direction can be turned on to shorten the test path to the maximum extent, such as turning on the switch component M21 to test the electrical characteristics of the switch component M11. Alternatively, the switch components arranged adjacent to the wafer and the switch components to be tested at an oblique angle can be turned on to shorten the test path to the maximum extent, such as turning on the switch component M22 to test the electrical characteristics of the switch component M11.

In addition, with the development of semiconductor technology, the characteristic size of semiconductor devices continues to shrink, and the size of semiconductor devices integrated on the wafer continues to decrease. The spacing between the second electrodes of two adjacent switching components is generally very small. Therefore, if the second electrodes of two adjacent switching components are tested to test the electrical characteristics of the switching component to be tested, high requirements are placed on the recognition rate of the probe. In addition, some switching components have a relatively high withstand voltage (such as several thousand volts). Two adjacent probes are very close and have to withstand high voltage, which also faces certain technical problems. Therefore, it is better to choose a switch component that is at least one switch component away from the switch component to be tested to turn on and test the electrical characteristics of the switch component to be tested. For example, you can also choose to turn on switch components M13, M31 or M23 to test the electrical characteristics of switch component M11.

In one embodiment of the present invention, one of the multiple switching components on the wafer can be selected to be turned on and the electrical characteristics of the switching component to be tested can be tested by testing the electrical parameters between the second electrode of the switching component and the second electrode of the switching component to be tested. As described above, the switching component M12, the switching component M21, the switching component M22, the switching component M13, the switching component M31 or the switching component M23 of the wafer can be controlled to be turned on to test the electrical characteristics of the switching component M11. However, the switch components on the wafer have a certain defective rate. In order to improve the efficiency and speed of the test, multiple switch components on the wafer can be turned on at the same time, and the electrical characteristics of the switch components to be tested are tested by testing the electrical parameters between the second electrode of the switch component to be tested and the second electrodes of multiple switch components. For example, the switch components M12, M21, M22, M13, M31 and M23 of the wafer are controlled to be turned on at the same time, and the electrical characteristics of the switch component M11 are tested by testing the electrical parameters between the second electrodes S12, S21, S22, S13, S31 and S23 and the second electrode S11 of the switch component M11 to be tested. Specifically, the second probe includes multiple probes, wherein the multiple second probes are in one-to-one contact with the second electrodes of the multiple switched components that are turned on, so the failure of any one of the switched components does not affect the test, and the simultaneous turning on of multiple switch components connects the test paths in parallel, which can further reduce the parasitic inductance. For example, it can be expanded to 4 or 8 adjacent switch components being turned on.

In an embodiment of the present invention, the above-mentioned embodiments of the position of the conducting switch components and the number of the conducting switch components can be used in combination.

In one embodiment of the present invention, the switch component driving circuit 400 is an isolation driving circuit.

In one embodiment of the present invention, a method for testing electrical characteristics of a switch component on a wafer is provided, wherein the wafer includes a plurality of switch components, each of which includes a first electrode and a second electrode, and the first electrodes of the plurality of switch components are connected to each other, wherein:

When testing the electrical characteristics of a first switching component among a plurality of switching components, control is performed so that at least one second switching component among the plurality of switching components is turned on, so that the first electrode of the turned-on second switching component is electrically connected to the second electrode; and electrical parameters between the second electrode of the first switching component and the second electrode of the second switching component are obtained to obtain the electrical characteristics of the first switching component.

In this way, by controlling the second switching element to be in an on state, the first electrode of the second switching element is electrically connected to the second electrode, and because the first electrodes of multiple switching components are connected to each other, the first electrode of the first switching element is electrically connected to the second electrode of the second switching component, and the electrical characteristics of the first switching element can be obtained by testing the electrical parameters between the second electrode of the first switching element and the second electrode of the second switching component.

In one embodiment of the present invention, a testing device is further provided, as shown in FIG3 . The testing device includes a probe card 330 on which a plurality of probes are arranged. The probe card 330 is moved so that a first probe 331 contacts a second electrode of the first switching component and a second probe 332 contacts a second electrode of the second switching component. The electrical parameters between the first probe 331 and the second probe 332 are tested to obtain the electrical parameters between the second electrode of the first switching component and the second electrode of the second switching component, thereby obtaining the electrical characteristics of the first switching component.

Furthermore, in one embodiment, the test device further comprises a wafer chuck 320, the wafer chuck 320 supports the wafer 310 through the first surface of the wafer, and the first electrodes of the plurality of switch components are all located on the first surface of the wafer, the second electrodes of the plurality of switch components are all located on the second surface of the wafer, and the second surface of the wafer and the first surface of the wafer are two opposite surfaces of the wafer. Furthermore, in one embodiment, the probe is arranged on a side of the probe card 330 facing the second surface of the wafer.

Furthermore, in one embodiment, the test device further comprises a switch component drive circuit 400, which is used to output a switch control signal to a plurality of switch components on the wafer, and control at least one second switch component among the plurality of switch components to be turned on. Furthermore, in one embodiment, the switch component drive circuit 400 is connected to the control terminals of the plurality of switch components, and outputs the switch control signal to the control terminals of the plurality of switch components. Furthermore, in one embodiment, the control terminals of the switch components are located on the second surface of the wafer.

In this way, the second probe contacting the second electrode of the second switch component is equivalent to contacting the first electrode of the first switch component, and the first probe contacting the second electrode of the first switch component, so that the electrical characteristics of the first switch component can be tested by the first probe and the second probe. Because the first probe and the second probe correspond to the second electrodes of the first switch component and the second switch component located on the second surface of the wafer, respectively, and the probes are arranged on the side of the probe card facing the second surface of the wafer, it is not necessary to arrange the probes outside the contact area between the wafer 310 and the wafer chuck 320, and it is not necessary to lead the first electrode through the conductive supporting surface 321 on the wafer chuck 320, so that the electrical characteristics test path of the first switch component is shortened. Specifically, the test path is from the first probe 331 to the second electrode of the first switch component, then to the second electrode of the second switch component, and then to the second probe 332, as shown by the dotted line in FIG. 3, or as shown by the dotted line 600 in FIG. 5. Compared with the prior art, the test path length is greatly shortened, and the parasitic inductance is greatly reduced, so that the measurement error of high-frequency measurement and dynamic measurement is reduced, so that the wafer inspection is performed with higher accuracy. The above test method does not need to change the structure of the test device. It only needs to turn on a switch component on the wafer, and the first electrode of the switch component is electrically connected to the first electrode of the switch component to be tested. Then, the electrical characteristics of the switch component to be tested can be tested by testing the parameters between the second electrode of the switch component and the second electrode of the switch component to be tested. Furthermore, as shown in FIG. 3 , the first probe 331 and the second probe 332 are both located within the area of the probe card 330 that directly faces the wafer 310, so that the path can be further tested.

In one embodiment, the optional arrangement of the first switch component and the second switch component on the wafer is adjacent arrangement, such as adjacent arrangement in the X-axis or Y-axis direction or adjacent arrangement at an oblique angle, and the specific principle is the same as above, which will not be repeated here. In addition, in one embodiment, there is at least one switch component between the second switch component and the first switch component (that is, the switch component to be tested), and the specific principle is the same as above, which will not be repeated here.

In one embodiment, preferably, the number of the second switch components that are turned on is multiple, and the specific principle is the same as above, which will not be repeated here. Then the second probes include multiple, wherein the multiple second probes are in one-to-one contact with the second electrodes of the multiple switch components that are turned on, and the specific principle is the same as above, which will not be repeated here.

In an embodiment of the present invention, the above-mentioned embodiments of the position of the conducting switch components and the number of the conducting switch components can be used in combination.

In one embodiment of the present invention, the switch component driving circuit 400 is an isolation driving circuit.

In one embodiment of the present invention, the plurality of switch components are MOSFETs (field effect transistors), the source (S) and the gate (G) are located on the second surface of the wafer, the drain is located on the first surface of the wafer, the drains are connected together, and the electrical parameters between the source of the MOSFET to be tested and the source of at least one MOSFET that is turned on are tested to obtain the electrical characteristics of the MOSFET to be tested. Since at least one MOSFET among the plurality of MOSFETs is turned on, the source of the turned-on MOSFET is equivalent to the drain of the MOSFET to be tested, and therefore, testing the electrical parameters between the source of the MOSFET to be tested and the source of at least one MOSFET that is turned on is equivalent to testing the electrical parameters between the source and drain of the MOSFET to be tested to obtain the electrical characteristics of the MOSFET to be tested.

In one embodiment of the present invention, the plurality of switch components are IGBTs (Insulated Gate Bipolar Transistor), the emitter (E) and the gate (G) are located on the second surface of the wafer, the collector is located on the first surface of the wafer, the collectors are connected together, and the electrical parameters between the emitter of the IGBT to be tested and the emitter of at least one IGBT that is turned on are tested to obtain the electrical characteristics of the IGBT to be tested. Since at least one IGBT among the plurality of IGBTs is turned on, the emitter of the IGBT that is turned on is equivalent to the collector of the IGBT to be tested, and therefore, testing the electrical parameters between the emitter of the IGBT to be tested and the emitter of at least one IGBT that is turned on is equivalent to testing the electrical parameters between the emitter and the collector of the IGBT to be tested to obtain the electrical characteristics of the IGBT to be tested.

Specifically, in one embodiment, the plurality of switch components are diodes, the first electrode is an anode, the second electrode is a cathode, or the first electrode is a cathode, the second electrode is an anode, and the diode can receive a positive voltage to be turned on, so that the anode and the cathode of the diode are electrically connected. As described above, the electrical characteristics of the diode to be tested are tested by testing the electrical parameters between the anode or cathode of the turned-on diode and the anode or cathode of the diode to be tested.

In one embodiment of the present invention, at least one switching component that is turned on is arranged adjacent to the switching component to be tested on the wafer. In one embodiment of the present invention, at least one switching component that is turned on is arranged on the wafer with at least one switching component spaced apart from the switching component to be tested. Or a combination of the above embodiments, that is, there are multiple switching components that are turned on, some of which are arranged adjacent to the switching component to be tested on the wafer, and some of which are arranged on the wafer with at least one switching component spaced apart from the switching component to be tested.

In an embodiment of the present invention, the electrical characteristics of the switch component to be tested are dynamic characteristics of the switch component to be tested.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims (7)

1. A method of testing electrical characteristics of a switching device on a wafer, wherein the wafer includes a plurality of switching devices, each switching device including a first electrode and a second electrode, the first electrodes of the plurality of switching devices being interconnected, comprising:

When the electrical characteristics of a first switch element in the plurality of switch elements are tested, controlling to enable at least one second switch element in the plurality of switch elements to be conducted, and enabling a first electrode and a second electrode of the conducted second switch element to be electrically communicated; obtaining an electrical parameter between a second electrode of the first switching element and a second electrode of the second switching element to obtain an electrical characteristic of the first switching element;

the testing device comprises a probe card, a plurality of probes are arranged on the probe card, the probe card is moved to enable the first probes to be in contact with the second electrodes of the first switch components, the second probes are in contact with the second electrodes of the second switch components, electric parameters between the first probes and the second probes are tested to obtain electric parameters between the second electrodes of the first switch components and the second electrodes of the second switch components, and electric characteristics of the first switch components are obtained.

2. The method of testing electrical characteristics of a switch element on a wafer of claim 1, wherein the probes are disposed on a side of the probe card facing the second side of the wafer.

3. The method of claim 2, wherein the first probe and the second probe are located within a region of the probe card that directly faces the second side of the wafer.

4. A method of testing the electrical characteristics of a switching device on a wafer according to claim 3, wherein the second switching device is a switching device arranged adjacent to the first switching device on the wafer.

5. The method of claim 4, wherein the second switch element is a switch element on the wafer that is arranged at an oblique angle to the first switch element.

6. The method of claim 5, wherein the second switching element is spaced apart from the first switching element by at least one switching element.

7. The method of claim 6, wherein the number of second switch elements is a plurality, the second probes comprise a plurality of probes, and the plurality of second probes are in one-to-one contact with the second electrodes of the plurality of switch elements.