CN113594856B - A terahertz scalar vortex quantum cascade laser and a method for preparing the same - Google Patents
A terahertz scalar vortex quantum cascade laser and a method for preparing the same Download PDFInfo
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- CN113594856B CN113594856B CN202110930314.1A CN202110930314A CN113594856B CN 113594856 B CN113594856 B CN 113594856B CN 202110930314 A CN202110930314 A CN 202110930314A CN 113594856 B CN113594856 B CN 113594856B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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Abstract
本发明涉及一种太赫兹标量涡旋量子级联激光器，包括一衬底以及位于该衬底上方的键合金属层，所述键合金属层的上方设有沿激光器的长度方向依次排布的种子激光区、渐变放大区、绝缘区、发射区，种子激光区的与渐变放大区相对的一侧设有第一吸收区，发射区的周侧设有第二吸收区；渐变放大区的宽度从种子激光区向绝缘区渐张，绝缘区的宽度从渐变放大区向发射区渐张。本发明还提供一种太赫兹标量涡旋量子级联激光器的制备方法，本发明能够直接发射有较高模式纯度的太赫兹标量涡旋激光，可以实现中空的环状远场光斑，相位呈螺旋形携带轨道角动量，可以实现特定的拓扑荷数，偏振特性为线性，稳定性高、激发效率高、线宽窄、边模抑制比高。
The present invention relates to a terahertz scalar vortex quantum cascade laser, comprising a substrate and a bonding metal layer located above the substrate, wherein a seed laser region, a gradual amplification region, an insulating region, and an emission region are arranged in sequence along the length direction of the laser above the bonding metal layer, a first absorption region is provided on the side of the seed laser region opposite to the gradual amplification region, and a second absorption region is provided on the surrounding side of the emission region; the width of the gradual amplification region gradually expands from the seed laser region to the insulating region, and the width of the insulating region gradually expands from the gradual amplification region to the emission region. The present invention also provides a method for preparing a terahertz scalar vortex quantum cascade laser, which can directly emit a terahertz scalar vortex laser with a high mode purity, can realize a hollow annular far-field light spot, and the phase is spirally carried with orbital angular momentum, can realize a specific topological charge, and has linear polarization characteristics, high stability, high excitation efficiency, narrow line width, and high side mode suppression ratio.
Description
Technical Field
The invention relates to the field of terahertz quantum cascade lasers, in particular to a terahertz scalar vortex quantum cascade laser and a preparation method thereof.
Background
Terahertz (THz) Quantum Cascade Lasers (QCL) become a very potential coherent light source in the range of 2-5THz due to the advantages of high energy conversion efficiency, small volume, easy integration, electric pumping and the like, and have important application in the fields of imaging, material detection, communication and the like. For example, in imaging and substance detection, because the intrinsic vibrational energy level of a large number of molecules and clusters is in the terahertz band, this band is also called the fingerprint spectrum of molecules, and terahertz imaging techniques utilizing this characteristic have been applied in the fields of molecular spectroscopy, biomedicine, security, nondestructive inspection, and the like. In the aspect of communication, terahertz wireless communication has the advantages of wide bandwidth, high confidentiality, penetrability of a plasma layer and the like, and can become another important communication frequency band for microwave and optical communication.
To be used for(L is the topological charge number, i is the imaginary unit,Electromagnetic waves in the form of angular coordinates) have orbital angular momentum and are known as eddy current due to their helical wave fronts. Vortex light is used in STED technology and can break through diffraction limit to lower resolution to nanometer level. And, by encoding and multiplexing of orbital angular momentum, it is theoretically possible to add an infinite number of channels at the same communication frequency. The vortex rotation can be classified into scalar vortex rotation and vector vortex rotation, and the polarization of the scalar vortex field is uniform and spatially uniform, and the polarization of the vector vortex field varies with the spatial position.
At present, vortex light is mostly generated by discrete devices, and has the defect of unstable light path assistance. While integrated vortex light emitters are concentrated in the visible light and communication bands, there is no laser capable of directly generating vortex light in the terahertz band. Therefore, a laser capable of performing vortex modulation on the phase of the terahertz wave to directly generate a stable scalar vortex terahertz wave is needed.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a terahertz scalar vortex quantum cascade laser and a preparation method thereof, which can directly emit scalar vortex terahertz waves and have the advantage of high stability, so that the emergent scalar vortex terahertz waves have higher mode purity.
The invention provides a terahertz scalar vortex quantum cascade laser which comprises a substrate and a bonding metal layer positioned above the substrate, wherein a seed laser region, a gradual amplification region, an insulation region and a transmitting region which are sequentially arranged along the length direction of the laser are arranged above the bonding metal layer, a first absorption region is arranged on one side, opposite to the gradual amplification region, of the seed laser region, and a second absorption region is arranged on the periphery of the transmitting region, the width of the gradual amplification region gradually expands from the seed laser region to the insulation region, and the width of the insulation region gradually expands from the gradual amplification region to the transmitting region.
Further, the seed laser region includes, from bottom to top, a first active region having a periodic grating structure therein, and a first top metal layer.
Further, the periodic grating structure is composed of a plurality of elongated gratings with the same size, and the elongated gratings are equidistantly spaced.
The gradual amplification region is provided with a first starting side and a first ending side, the insulation region is provided with a second starting side and a second ending side, the width of the first starting side is matched with the width of the seed laser region, the width of the first ending side is matched with the width of the second starting side, and the width of the second ending side is matched with the width of the emission region.
Further, the gradual amplification region comprises a second active region and a second top metal layer from bottom to top, and the second active region and the second top metal layer are trapezoid.
Further, the insulating region sequentially comprises a third active region, an insulating layer and a third top metal layer from bottom to top, and the third active region, the insulating layer and the third top metal layer are trapezoid.
Further, the emitter region includes, from bottom to top, a fourth active region and a fourth top metal layer, a portion of the fourth top metal layer having a fork-shaped grating structure.
Further, a portion of the fourth top metal layer having a fork grating structure is formed as a fork grating region, and a portion not having a fork grating structure is formed as a lead region.
The invention also provides a preparation method of the terahertz scalar vortex quantum cascade laser, which comprises the following steps:
step S1, preparing an active area material with a bonding metal layer.
And S2, manufacturing a absorption edge pattern on the active area material with the bonding metal layer.
And S3, manufacturing a periodic grating pattern on the surface of the active region layer in the absorption edge pattern area, and corroding the active region layer with the periodic grating pattern to obtain a periodic grating slit.
And step S4, growing an insulating material on the surface of the active region layer after the step S3, manufacturing an insulating layer pattern on part of the surface of the active region layer, and removing the insulating material in the area except the insulating layer pattern.
And S5, manufacturing an electrode pattern on the surface of the active region layer after the step S4, growing metal on the photoetched pattern, and stripping to form a top metal layer.
And S6, etching the area of the active area layer which is not covered by the photoresist by taking the photoresist as a mask of the top metal layer to expose the bonding metal layer.
And S7, thinning the substrate subjected to the step S6, and growing metal on the back of the thinned substrate.
Further, the step S1 includes:
Step S11, preparing a first substrate with a first metal layer, wherein the first substrate is provided, an etching barrier layer is epitaxially grown on the surface of the first substrate, an upper contact layer is epitaxially grown on the etching barrier layer, an active region layer is epitaxially grown on the upper contact layer, a lower contact layer is epitaxially grown on the active region layer, and then the first metal layer is formed on the lower contact layer.
Step S12, preparing a second substrate with a second metal layer, wherein the step comprises the steps of providing the second substrate and forming the second metal layer on the surface of the second substrate.
And step S13, bonding the first metal layer and the second metal layer together to form a bonding metal layer.
And S14, etching the first substrate to expose the corrosion barrier layer, and removing the corrosion barrier layer, wherein the second substrate is used as the substrate.
The terahertz scalar vortex laser with higher mode purity can be directly emitted through electric pumping, a hollow annular far-field light spot can be realized, the phase is spiral, the orbital angular momentum is carried, the specific topological charge number can be realized, the polarization characteristic is linear, and the terahertz scalar vortex laser has the advantages of high stability, high excitation efficiency, narrow line width and high side mode suppression ratio.
Drawings
Fig. 1 is a schematic diagram of the structure of a terahertz scalar vortex quantum cascade laser according to the invention.
Fig. 2 is a cross-sectional view taken along line A-A of fig. 1.
Fig. 3 is a schematic diagram of the structure of the seed laser region in fig. 1.
Fig. 4 is a schematic view of the structure of the graded-magnification area in fig. 1.
Fig. 5 is a schematic view of the structure of the insulating region in fig. 1.
Fig. 6 is a schematic view of the structure of the emitter region of fig. 1.
Fig. 7 is a flow chart of a method of fabricating a terahertz scalar vortex quantum cascade laser in accordance with the invention.
Fig. 8 is an L-I-V test result of a terahertz scalar vortex quantum cascade laser according to the invention.
Fig. 9 is a spectral diagram of a terahertz scalar vortex quantum cascade laser at different pump currents in accordance with the invention.
Fig. 10 is a pattern purity plot of the topological charge number of the emitted vortex rotation of a terahertz scalar vortex quantum cascade laser according to the invention.
Fig. 11 is a polarization diagram of vortex light emitted by a terahertz scalar vortex quantum cascade quantum level laser in accordance with the invention.
Detailed Description
Preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 1 and fig. 2, the terahertz scalar vortex quantum cascade laser provided by the invention adopts a bimetallic waveguide structure, and comprises a substrate 1, wherein a bonding metal layer 2 is arranged above the substrate 1, a seed laser region 3, a gradual amplification region 4, an insulation region 5 and an emission region 6 which are sequentially arranged along the length direction of the laser are arranged above the bonding metal layer 2, a first absorption region 7 is arranged on one side of the seed laser region 3 opposite to the gradual amplification region 4, and a second absorption region 8 is arranged on the peripheral side of the emission region 6 which is not connected with the insulation region 5.
The seed laser region 3 is generally rectangular in shape and includes, from bottom to top, as shown in fig. 3, a first active region 31 and a first top metal layer 32. The first active region 31 has a periodic grating structure 311, where the periodic grating structure 311 is composed of a plurality of elongated gratings with the same size, and the elongated gratings are equally spaced. The periodic grating structure 311 is formed by etching a plurality of grating slits with the same size in the first active region 31, then growing metal on the surface of the first active region 31, when growing metal, the metal enters the grating slits to form the grating structure 311, and the rest of the metal which does not enter the grating slits grows into a first top metal layer 32 on the surface of the first active region 31. The number of the elongated gratings in the periodic grating structure 311 is 60-100, the distance between two adjacent elongated gratings is 8 μm-22 μm, the length of each elongated grating is 150 μm-300 μm, the width is 4 μm-10 μm, and the height (i.e. the etching depth of the first active region 13) is 200nm-2000nm. If the vortex light frequency excited by the laser is designed to be 3.45THz, the number of the long-strip gratings is designed to be 60, the distance between two adjacent long-strip gratings is designed to be 12.1um, the length of each long-strip grating is designed to be 250 mu m, the width is designed to be 8 mu m, and the height is designed to be 600nm. Meanwhile, pi phase shift of quarter vortex light wavelength is added in the center of the grating, so that the Q value of the distributed feedback structure can be improved, the lasing frequency can work in the forbidden band center of a photon energy band, and the single-mode characteristic is kept.
Referring again to fig. 1, the width of the graded amplification region 4 is graded from the seed laser region 3 toward the insulating region 5, having a first start side 41 and a first termination side 42. The width of the first start side 41 matches the width of the seed laser region 3 (i.e. the width of both is equal), and the first end side 42 matches the width of the second start side 51 of the insulating region 5. The gradual amplification section 4 is gradually widened by a distance of 1000 μm to 1600 μm, i.e., a distance between the first start side 41 and the first end side 42 is 1000 μm to 1300 μm. Taking the seed laser region 3 with a width of 250 μm as an example, the graded amplification region 4 is graded from 250 μm to 1000 μm-1300 μm to the insulation region 5. The specific structure of the graded amplification region 4 is shown in fig. 4, and includes a second active region 43 and a second top metal layer 44 from bottom to top. The second active region 43 and the second top metal layer 44 have a trapezoid shape, wherein the short sides of the two together form the first start side 41, and the long sides together form the first end side 42.
Similarly to the gradation amplification section 4, the width of the insulating section 5 is tapered from the gradation amplification section 4 toward the emission section 6, having a second start side 51 and a second end side 52 (see fig. 1). The width of the second starting side 51 matches the width of the first terminating side 42 and the width of the second terminating side 52 matches the width of the emitter region 6. The insulation region 5 is tapered by a distance of 400 μm to 700 μm, i.e. the distance between the second start side 51 and the second end side 52 is 400 μm to 700 μm. The specific structure of the insulating region 5 is shown in fig. 5, and includes a third active region 53, an insulating layer 54, and a third top metal layer 55 in this order from bottom to top. Wherein the third active region 53, the insulating layer 54 and the third top metal layer 55 have a trapezoid shape, and the short sides of the three together form the second start side 51, and the long sides together form the second end side 52. In this way, the waveguide is tapered from the width of the seed laser region 3 to the width of the emission region 6 by the taper amplification region 4 and the insulation region 5.
The first top metal layer 32, the second top metal layer 44 and the third top metal layer 55 described above are in communication for the leads to provide electrical pumping to the seed laser region 3 and the graded amplification region 4. Since the pumping current and the pumping voltage required during the electric pumping exceed the upper limit of the current power supply, the insulating layer 54 and the bottom surface of the second active region 43 are set at the same height, and the third top metal layer 55 is higher than the second top metal layer 44 by the thickness of the insulating layer 54, so that the insulating layer 54 of the insulating region 5 electrically insulates a part of the active region, thereby reducing the area of the electric pumping, reducing the working current of the device, and reducing the working voltage of the pumping power supply. Thus, after the seed laser region 1 generates seed laser with fixed frequency, adiabatic change of mode is realized through the gradual amplification region 4 and the insulation region 5, so as to keep the fundamental mode of the waveguide unchanged in the transmission process, and further ensure uniformity of electromagnetic field when the laser reaches the emission region 6.
The emitter region 6 is generally rectangular and comprises, from bottom to top, as shown in fig. 2 and 6, a fourth active region 61 and a fourth top metal layer 62. Wherein a portion of the fourth top metal layer 62 has a fork grating structure with a grating depth extending through the fourth top metal layer 62, the portion having the fork grating structure being formed as a fork grating region 63 for counteracting scalar eddy current rotations. Another portion of the fourth top metal layer 62 that does not have a fork grating structure is then formed as a lead region 64 for a lead. The fork-shaped grating structure consists of a plurality of long-strip-shaped gratings which are distributed to form a fork-shaped pattern. Specifically, the method for forming the fork grating structure comprises utilizing computer holographic principle to make the laser waveguide mode Er(xr,yr,zr)＝ur(xr,yr,zr)exp(ikzr) and target vortex rotation generated by the seed laser region 3And manufacturing the fork-shaped interference pattern on a photoetching mask plate in a semiconductor processing process, and forming a fork-shaped grating structure through photoetching long gold. According to diffraction principle analysis, when the grating in the fork-shaped grating structure is in a strip shape, the intensity of a waveguide mode near the center of the grating can be relatively uniform, and the mode purity of emergent vortex rotation is improved.
The first absorption region 7 comprises a fifth active region and the second absorption region 8 comprises a sixth active region. The absorption area 7 is used for absorbing laser generated on the left end face of the seed laser area 3, and the absorption area 8 is used for absorbing laser transmitted through the fork-shaped grating structure so as to avoid interference of reflection on the fork-shaped grating mode. Note that the first active region 31, the second active region 43, the third active region 53, the fourth active region 61, the fifth active region, and the sixth active region are the same active region, and are formed in one step, and the first top metal layer 32, the second top metal layer 44, the third top metal layer 55, and the fourth top metal layer 62 are also the same metal layer, and are formed in one step, so that they are separated for convenience of description.
The method for preparing the terahertz scalar vortex quantum cascade laser is described below.
As shown in fig. 7, the preparation method of the terahertz scalar vortex quantum cascade laser provided by the invention comprises the following steps:
Step S1, a substrate 1 having a bonding metal layer 2 and an active region layer is prepared. Comprising the following steps:
Step S11, preparing a first substrate with a first metal layer, namely providing the first substrate, epitaxially growing a corrosion barrier layer on the surface of the first substrate, epitaxially growing an upper contact layer on the corrosion barrier layer, epitaxially growing an active region layer on the upper contact layer, epitaxially growing a lower contact layer outside the active region layer, and then forming the first metal layer on the lower contact layer. The active region layer comprises 90 periodically repeating modules, each module comprises 9 layers of GaAs potential wells and 9 layers of Al 0.15Ga0.85 As potential barriers which are overlapped with each other, the thicknesses of the first two layers of GaAs are 11.4, 2.0, 12.0, 2.0, 12.2, 1.8, 12.8, 1.5, 15.8, 0.6, 9.0, 0.6, 14.0, 3.8, 11.6, 3.5, 11.3 and 2.7 (nm) in sequence from GaAs, and the n-type doping concentration is 10 16cm-3.
And step S12, preparing a second substrate with a second metal layer, namely providing the second substrate, and forming the second metal layer on the surface of the second substrate.
Step S13, bonding the first metal layer and the second metal layer together to form a bonding metal layer. The bonding metal layer obtained at this time corresponds to the bonding metal layer 2 above.
In step S14, the first substrate is etched to expose the corrosion barrier layer, and then the corrosion barrier layer is removed with an acid solution (e.g., HF acid or concentrated hydrochloric acid). At this time, the second substrate having the second metal layer is left, the substrate 1 is formed, and the substrate 1 having the bonding metal layer 2 and the active region layer is completed.
In step S2, a absorption edge pattern is formed on the substrate 1 having the bonding metal layer 2 and the active region layer. The absorption edge pattern is the region formed by the circumferences of the seed laser region 3, the gradual amplification region 4, the electric insulation region 5, the emission region 6, the first absorption region 7 and the second absorption region 8. Thereby, boundaries of the seed laser region 3, the graded amplification region 4, the electrically insulating region 5, the emission region 6, the first absorption region 7, and the second absorption region 8 are formed.
And S3, manufacturing a periodic grating pattern on the surface of the active region layer in the absorption edge pattern area by adopting a photoetching technology, and corroding the active region layer with the periodic grating pattern by adopting a corrosive liquid of a sulfuric acid system to obtain a periodic grating slit. At this time, the active region having the periodic grating slit corresponds to the first active region 31. The corrosion depth is calibrated through a step instrument. After the etching is completed, the photoresist on the surface of the active region layer is required to be removed.
And S4, on the basis of the step S3, continuously growing an insulating material on the surface of the active region layer, manufacturing an insulating layer pattern on part of the surface of the active region layer by adopting a photoetching technology, and then removing the insulating material in the area except the insulating layer pattern by using hydrofluoric acid corrosive liquid. At this time, the insulating material remaining on the surface of the active region layer is the insulating layer 54 corresponding to the above-mentioned electrically insulating region 5. In this embodiment, silicon dioxide is used as the insulating material, and the thickness is about 200nm. After the etching is completed, the photoresist on the surface of the active region layer is required to be removed.
And S5, manufacturing an electrode pattern on the surface of the active region layer with the periodic grating slits and the insulating layer by adopting a photoetching technology, growing metal on the photoetched electrode pattern by adopting an electron beam evaporation method, a magnetron sputtering method or a thermal evaporation method, and stripping to form a top metal layer. The top metal layers at this time correspond to the first top metal layer 32, the second top metal layer 44, the third top metal layer 55, and the fourth top metal layer 62. Wherein the fourth top metal layer 62 has a fork-shaped grating structure.
And S6, etching the area of the active area layer which is not covered by the photoresist by taking the photoresist as a mask of the top metal layer to expose the bonding metal layer. It should be noted that the photoresist as a mask is wider than the top metal layer and the absorption edge region in step S2 by 5um to protect the top metal layer and the absorption edge. After the etching is completed, the photoresist on the surface of the active region layer is required to be removed.
And S7, thinning the substrate subjected to the step S6 to about 200 mu m by mechanical polishing, and then growing metal on the back of the thinned substrate to improve heat dissipation.
By using the invention, terahertz scalar vortex laser with high mode purity can be obtained, and the performance of the laser is described in detail through experimental results.
Fig. 8 shows the results of L-I-V testing of a laser with a topological charge number equal to 1 under different pumping conditions, measured in a pulse mode with a repetition rate of 10kHz and a pulse width of 1 mus. Different pumping voltages are provided to the fork grating in the test to study the laser characteristics at different gains. As can be seen from the graph, the highest output power of the device is at most 17.1mW when the grating voltage is equal to 13V.
Fig. 9 shows the spectral characteristic test result of the laser with the topology charge number equal to 1 according to the present invention. The pumping voltage of the fork grating is kept unchanged at 10.5V in the left graph, the pumping voltage of the fork grating is kept unchanged at 9V in the right graph, and the pumping current of the distributed feedback laser and the amplifying region is gradually changed, so that the pulse mode with the repetition frequency of 10kHz and the pulse width of 1 mu s is realized. The test temperature was 77K. As can be seen from the figure, the laser maintains a single mode characteristic from the threshold current as the current increases until a multimode characteristic occurs at the peak current. The single mode characteristics of the laser are not changed with the change of the grating voltage. The center frequency of the laser excitation is f= 3.4275THz.
Fig. 10 shows a pattern purity plot of the number of topological charges of the vortex light emitted by the laser. The result was obtained in a pulse mode of 77K with a repetition frequency of 10kHz and a pulse width of 1. Mu.s. The pumping condition of the laser with the topological charge number of 1 is that the pumping current of the distributed feedback laser and the amplifying region is 5.15A, and the pumping voltage of the fork grating is 10.5V. The pumping condition of the laser with the topological charge number of 2 is that the distributed feedback laser, the amplifying region and the emitting region are pumped together, and the pumping current is 6.19A. It can be seen that the mode purity of lasers with topological charges of 1 and 2 respectively is as high as 84.58% and 89.25%, respectively.
Fig. 11 shows a polarization test chart of vortex light emitted by a laser. It can be seen that in the vertical direction, the intensity appears to be both maximum and minimum, which indicates that the emitted vortex light is linearly polarized.
It can be seen that the invention can realize hollow annular far-field light spots, the phase is spiral carrying orbital angular momentum, specific topological charge numbers can be realized, the polarization characteristic is linear, and the invention has the characteristics of high excitation efficiency, narrow line width and high side mode suppression ratio.
The foregoing description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and various modifications can be made to the above-described embodiment of the present invention. All simple, equivalent changes and modifications made in accordance with the claims and the specification of this application fall within the scope of the patent claims. The present invention is not described in detail in the conventional art.
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