CN113667546A - Cleaning agent composition used after silicon wafer processing - Google Patents
Cleaning agent composition used after silicon wafer processing Download PDFInfo
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- CN113667546A CN113667546A CN202111008614.0A CN202111008614A CN113667546A CN 113667546 A CN113667546 A CN 113667546A CN 202111008614 A CN202111008614 A CN 202111008614A CN 113667546 A CN113667546 A CN 113667546A
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- Prior art keywords
- silicon wafer
- cleaning agent
- cleaning
- agent composition
- particles
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 33
- 239000000203 mixture Substances 0.000 title claims abstract description 20
- 239000003513 alkali Substances 0.000 claims abstract description 6
- 239000004094 surface-active agent Substances 0.000 claims abstract description 6
- 229920000620 organic polymer Polymers 0.000 claims abstract description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 229920002401 polyacrylamide Polymers 0.000 claims description 6
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- FWVCSXWHVOOTFJ-UHFFFAOYSA-N 1-(2-chloroethylsulfanyl)-2-[2-(2-chloroethylsulfanyl)ethoxy]ethane Chemical compound ClCCSCCOCCSCCCl FWVCSXWHVOOTFJ-UHFFFAOYSA-N 0.000 claims description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 2
- 229920000191 poly(N-vinyl pyrrolidone) Polymers 0.000 claims description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 25
- 239000002245 particle Substances 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 6
- 239000002105 nanoparticle Substances 0.000 abstract description 6
- 238000005498 polishing Methods 0.000 abstract description 6
- 238000005520 cutting process Methods 0.000 abstract description 5
- 239000003344 environmental pollutant Substances 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 4
- 231100000719 pollutant Toxicity 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000008367 deionised water Substances 0.000 abstract description 3
- 229910021641 deionized water Inorganic materials 0.000 abstract description 3
- 238000004062 sedimentation Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 27
- 238000000034 method Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000012372 quality testing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/29—Sulfates of polyoxyalkylene ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3769—(Co)polymerised monomers containing nitrogen, e.g. carbonamides, nitriles or amines
- C11D3/3773—(Co)polymerised monomers containing nitrogen, e.g. carbonamides, nitriles or amines in liquid compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
The invention relates to a cleaning agent composition after silicon wafer processing, in particular to a cleaning agent composition for the surface of a silicon wafer after linear cutting or polishing, and belongs to the technical field of cleaning after silicon wafer processing. The cleaning liquid composition of the invention is characterized by containing organic polymer flocculant. The weight percentage of each component is as follows: 10-15% of surfactant, 5-10% of penetrant, 0.01-0.3% of organic polymeric flocculant, 0.2-2% of alkali and the balance of deionized water. The cleaning liquid composition provided by the invention is used for cleaning the processed silicon wafer. Because a large amount of polar groups in a molecular chain of the high molecular weight organic flocculant can adsorb nano solid particles suspended on the surface of a workpiece or in water, bridging among the particles forms large flocculates, so that the nano particles are promoted to be agglomerated into large particles, stripping of the nano particles on the surface of the workpiece and sedimentation of the particles in suspension are accelerated, the purpose of quickly and efficiently removing residual particle pollutants on the surface of a silicon wafer is realized, and a good cleaning effect is achieved.
Description
Technical Field
The invention relates to a cleaning agent composition after silicon wafer processing, in particular to a cleaning agent composition for the surface of a silicon wafer after processing such as wire cutting or polishing. Belonging to the technical field of silicon wafer surface cleaning treatment.
Background
Silicon wafers are one of the most widely used materials in the electronic industry, and potential pollution of each process in silicon wafer production can cause defect generation and device failure. In the manufacturing process of the ultra-large scale integrated circuit, the surface state of a silicon wafer is the basis for ensuring the flatness of the integrated circuit, and if the cleaning effect is not good, the yield, the performance and the reliability of a device can be directly influenced.
In the use process of the silicon chip, wire cutting and polishing are common processing modes. In the processing, a large amount of fine silicon powder is generated by wire cutting, a large amount of high-concentration nano abrasive particles (such as nano silicon dioxide) and the like are used in a polishing solution, and due to the high activity and strong adsorption force of the nano particles, the fine silicon powder, the nano particles and other pollutants are easily adsorbed on the surface of a fresh processed workpiece, so that the silicon wafer is extremely difficult to clean after being processed, and residual particles on the surface of the processed silicon wafer are one of the main pollutants on the surface of the current silicon wafer. The quality of the cleaned silicon wafer after processing has seriously affected the service performance of the silicon wafer.
At present, the cleaning of silicon wafers mainly depends on standard RCA cleaning methods of cleaning agents such as strong acid, strong base, strong oxidizer and the like, and the cleaning agents have over-strong corrosivity and can cause the problems of surface roughness and the like after polishing. Moreover, the cleaning effect of the cleaning agent on residual particles is not ideal, a flower-shaped surface is easy to appear, and the surface of a cleaned silicon wafer has residual spots, so that the high requirement of the electronic industry production on the cleaning agent is difficult to meet.
Disclosure of Invention
The invention aims to overcome the defects of the existing cleaning technology after silicon wafer processing, and provides a cleaning liquid composition containing an organic polymeric flocculant.
In order to achieve the purpose, the invention adopts the following technical scheme: the invention relates to a cleaning agent composition after silicon wafer processing, which comprises an organic polymer flocculant.
Further, the composition comprises the following components in percentage by weight:
further, the surfactant is one of water-soluble surfactants such as sodium dodecyl benzene sulfonate, sodium dodecyl polyoxyethylene ether sulfate and peregal O-15.
Further, the penetrating agent is penetrating agent T or penetrating agent JFC.
Further, the organic polymeric flocculant comprises one or more of polyacrylamide, quaternized polyacrylamide, polyacrylic acid-polyacrylamide copolymer and styrene sulfonic acid copolymer, and the number average molecular weight of the organic polymeric flocculant is Mn 10-100 ten thousand.
Further, the base is an organic or inorganic base.
Further, the alkali is one of sodium hydroxide, potassium hydroxide, ethanolamine and tetramethylammonium hydroxide.
The cleaning solution composition has the advantages that the organic polymeric flocculant and the components in the cleaning solution composition have flocculation and stripping effects on nano-particle pollutants on the surface of a processed silicon wafer, so that the removal efficiency of nano-particles is improved, the particle residue is reduced, and meanwhile, the cleaning solution has low corrosivity, so that the surface smoothness and the surface cleanliness are improved. The ultra-precise cleaning solution is suitable for being used as an ultra-precise cleaning solution for the surface of a silicon wafer after processing (wire cutting or polishing).
Detailed Description
Specific embodiments of the present invention will now be described.
The first embodiment is as follows:
in this embodiment, the cleaning agent for the surface of the polished silicon wafer comprises the following components in percentage by weight:
preparation of the cleaning agent: under the mechanical stirring, adding the polymeric flocculant into deionized water, stirring and dissolving, then sequentially adding the surfactant, the penetrant and the alkali into the solution, and continuously stirring and dissolving uniformly to obtain the transparent liquid. The pH of the solution was about 10.
The cleaning agent is prepared by mixing deionized water according to the weight ratio of 1: after 20 dilution, carrying out ultrasonic cleaning on the polished silicon wafer, wherein the ultrasonic frequency is 100KHz, and the time is 10 minutes; the surface roughness Ra of the silicon wafer after cleaning was measured by an Atomic Force Microscope (AFM), and the surface residual particles were measured by a liquid phase particle counter (LPC). And finally, detecting the surface of the silicon wafer by using a product quality testing system, and testing the qualification rate of the product. The results are shown in Table 1.
Example two:
in this embodiment, the cleaning agent for the surface of the polished silicon wafer comprises the following components in percentage by weight:
the preparation, cleaning process and surface detection process of the cleaning agent in this example are the same as those in example 1. The results are shown in Table 1.
Example three:
in this embodiment, the cleaning agent for the surface of the polished silicon wafer comprises the following components in percentage by weight:
the preparation, cleaning process and surface detection process of the cleaning agent in this example are the same as those in example 1. The results are shown in Table 1.
Example four:
in this embodiment, the cleaning agent for the surface of the polished silicon wafer comprises the following components in percentage by weight:
the preparation, cleaning process and surface detection process of the cleaning agent in this example are the same as those in example 1. The results are shown in Table 1.
In order to compare the effects of the above-mentioned cleaning agents, a cleaning agent without adding an organic polymeric flocculant was used as a comparative example under the same test conditions.
Comparative example 1
The cleaning agent of comparative example 1 was used in place of the above cleaning agent, and then a cleaning test was carried out in the same manner as above, and finally the same test was carried out, and the results are shown in Table 1.
TABLE 1 test results after washing of examples and comparative examples
Injecting: the roughness Ra of the silicon wafer before cleaning is 0.112 nm.
As can be seen from Table 1, the cleaning agent containing the organic polymeric flocculant provided by the invention is used for cleaning the surface of the polished silicon wafer, so that the number of particles remaining on the surface is obviously reduced, the surface cleanliness is improved, and the product yield is obviously higher than that of the cleaning agent containing no polymeric flocculant; and the roughness Ra does not change much before and after surface cleaning.
Claims (7)
1. The cleaning agent composition after the surface processing of the silicon wafer is characterized by comprising an organic polymer flocculant.
2. The cleaning agent composition after the surface processing of the silicon wafer as claimed in claim 1, which is characterized by comprising the following components in percentage by weight:
3. the cleaning agent composition after the surface processing of the silicon wafer as claimed in claim 2, wherein the surfactant is one of water-soluble surfactants such as sodium dodecyl benzene sulfonate, sodium dodecyl polyoxyethylene ether sulfate and peregal O-15.
4. The cleaning agent composition after the surface processing of the silicon wafer as claimed in claim 2, wherein the penetrating agent is penetrating agent T or penetrating agent JFC.
5. The cleaning agent composition after the surface processing of the silicon wafer is carried out according to claim 2, wherein the organic polymeric flocculant comprises one or more of polyacrylamide, quaternized polyacrylamide, polyacrylic acid-polyacrylamide copolymer and styrene sulfonic acid copolymer, and the number average molecular weight of the organic polymeric flocculant is 10-100 ten thousand.
6. The cleaning agent composition after the surface processing of the silicon wafer as claimed in claim 2, wherein the alkali is an organic or inorganic alkali.
7. The cleaning agent composition after silicon wafer surface processing as claimed in claim 6, wherein the alkali is one of sodium hydroxide, potassium hydroxide, ethanolamine, tetramethylammonium hydroxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111008614.0A CN113667546A (en) | 2021-08-31 | 2021-08-31 | Cleaning agent composition used after silicon wafer processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111008614.0A CN113667546A (en) | 2021-08-31 | 2021-08-31 | Cleaning agent composition used after silicon wafer processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113667546A true CN113667546A (en) | 2021-11-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111008614.0A Pending CN113667546A (en) | 2021-08-31 | 2021-08-31 | Cleaning agent composition used after silicon wafer processing |
Country Status (1)
| Country | Link |
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| CN (1) | CN113667546A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114317128A (en) * | 2021-12-28 | 2022-04-12 | 上海化学试剂研究所有限公司 | A kind of high-purity water-soluble silicon wafer cleaning agent and preparation method thereof |
| CN114517132A (en) * | 2022-02-18 | 2022-05-20 | 太仓硅源纳米材料有限公司 | Cleaning agent composition containing micro-nano bubble precursor |
| CN115261155A (en) * | 2022-07-25 | 2022-11-01 | 中科广化（重庆）新材料研究院有限公司 | Efficient and low-pollution cleaning solution special for semiconductor electronic chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1876786A (en) * | 2006-06-30 | 2006-12-13 | 天津晶岭电子材料科技有限公司 | Cleaning solution for removing semiconductor material surface wax and organic substances and cleaning method thereof |
| CN102209595A (en) * | 2008-11-07 | 2011-10-05 | 朗姆研究公司 | Composition and Application of Two-Phase Contaminant Removal Media |
| CN103074175A (en) * | 2012-12-31 | 2013-05-01 | 深圳市力合材料有限公司 | Polishing pad cleaning solution and use method thereof |
| CN108300592A (en) * | 2018-01-31 | 2018-07-20 | 无锡乐东微电子有限公司 | Semi-conductor silicon chip neutrality aqueous cleaning agent and preparation method thereof |
| CN111410332A (en) * | 2019-12-02 | 2020-07-14 | 江苏久吾高科技股份有限公司 | Method and device for treating waste water from silicon wafer processing |
-
2021
- 2021-08-31 CN CN202111008614.0A patent/CN113667546A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1876786A (en) * | 2006-06-30 | 2006-12-13 | 天津晶岭电子材料科技有限公司 | Cleaning solution for removing semiconductor material surface wax and organic substances and cleaning method thereof |
| CN102209595A (en) * | 2008-11-07 | 2011-10-05 | 朗姆研究公司 | Composition and Application of Two-Phase Contaminant Removal Media |
| CN103074175A (en) * | 2012-12-31 | 2013-05-01 | 深圳市力合材料有限公司 | Polishing pad cleaning solution and use method thereof |
| CN108300592A (en) * | 2018-01-31 | 2018-07-20 | 无锡乐东微电子有限公司 | Semi-conductor silicon chip neutrality aqueous cleaning agent and preparation method thereof |
| CN111410332A (en) * | 2019-12-02 | 2020-07-14 | 江苏久吾高科技股份有限公司 | Method and device for treating waste water from silicon wafer processing |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114317128A (en) * | 2021-12-28 | 2022-04-12 | 上海化学试剂研究所有限公司 | A kind of high-purity water-soluble silicon wafer cleaning agent and preparation method thereof |
| CN114317128B (en) * | 2021-12-28 | 2024-12-03 | 上海化学试剂研究所有限公司 | A high-purity water-soluble silicon wafer cleaning agent and preparation method thereof |
| CN114517132A (en) * | 2022-02-18 | 2022-05-20 | 太仓硅源纳米材料有限公司 | Cleaning agent composition containing micro-nano bubble precursor |
| CN115261155A (en) * | 2022-07-25 | 2022-11-01 | 中科广化（重庆）新材料研究院有限公司 | Efficient and low-pollution cleaning solution special for semiconductor electronic chip |
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