CN113725274A - Pixel circuit, display panel and display device - Google Patents
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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Abstract
本公开实施例提供了一种像素电路、显示面板和显示装置,涉及显示技术领域,用于在兼顾改善显示面板显示画面的残像问题的前提下,改善显示面板显示画面的亮点问题。像素电路包括发光器件、驱动晶体管、第一晶体管和第二晶体管。驱动晶体管的第二极与发光器件耦接,驱动晶体管被配置为响应于控制极的电压控制流经第一极和第二极的电流大小。第一晶体管的第一极与驱动晶体管的控制极耦接,第二极被配置为写入第一初始化信号。第二晶体管的第一极与发光器件耦接,第二极被配置为写入第二初始化信号。其中,第一晶体管包括串联的至少两个子晶体管,至少一个子晶体管的沟道的宽长比小于第二晶体管的沟道的宽长比。
Embodiments of the present disclosure provide a pixel circuit, a display panel, and a display device, which relate to the field of display technology, and are used to improve the problem of bright spots of a display screen on the display panel while taking into account the problem of improving the afterimage problem of the display screen on the display panel. The pixel circuit includes a light emitting device, a driving transistor, a first transistor and a second transistor. The second electrode of the driving transistor is coupled to the light emitting device, and the driving transistor is configured to control the magnitude of the current flowing through the first electrode and the second electrode in response to the voltage of the control electrode. The first electrode of the first transistor is coupled to the control electrode of the driving transistor, and the second electrode is configured to write the first initialization signal. The first electrode of the second transistor is coupled to the light emitting device, and the second electrode is configured to write the second initialization signal. The first transistor includes at least two sub-transistors connected in series, and the width-to-length ratio of the channel of at least one of the sub-transistors is smaller than the width-to-length ratio of the channel of the second transistor.
Description
技术领域technical field
本发明涉及显示技术领域,尤其涉及一种像素电路、显示面板和显示装置。The present invention relates to the field of display technology, and in particular, to a pixel circuit, a display panel and a display device.
背景技术Background technique
目前,有机电致发光二极管(Organic Light-Emitting Diode Display,简称OLED)显示装置由于具有自发光、响应速度快、功耗低等优点,因而得到了越来越广泛的应用。At present, the organic light-emitting diode (Organic Light-Emitting Diode Display, OLED for short) display device has the advantages of self-luminescence, fast response, low power consumption, etc., and thus has been more and more widely used.
在OLED显示装置中,可以通过像素驱动电路来驱动OLED发光。像素驱动电路可以包括多个薄膜晶体管(Thin Film Transistor,简称TFT)。受制于薄膜晶体管自身的性质,在薄膜晶体管处于截止状态时,薄膜晶体管中会存在漏电流,从而导致显示装置的显示画面出现亮点、残像等,使显示画面的观感变差。In an OLED display device, the OLED can be driven to emit light by a pixel driving circuit. The pixel driving circuit may include a plurality of thin film transistors (Thin Film Transistor, TFT for short). Due to the properties of the thin film transistor itself, when the thin film transistor is in the off state, there will be leakage current in the thin film transistor, which will cause bright spots and afterimages to appear on the display screen of the display device, and the appearance of the display screen will deteriorate.
发明内容SUMMARY OF THE INVENTION
本发明的实施例提供一种像素电路、显示面板和显示装置,用于在兼顾改善显示面板显示画面的残像问题的前提下,改善显示面板显示画面的亮点问题。Embodiments of the present invention provide a pixel circuit, a display panel, and a display device, which are used to improve the problem of bright spots in a display screen of the display panel while taking into account the problem of improving the afterimage problem of the display screen of the display panel.
为达到上述目的,本发明的实施例采用如下技术方案:To achieve the above object, the embodiments of the present invention adopt the following technical solutions:
第一方面,提供了一种像素电路,包括发光器件、驱动晶体管、第一晶体管和第二晶体管。其中,驱动晶体管包括第一极、第二极和控制极,在驱动晶体管中,第二极与发光器件耦接,驱动晶体管被配置为响应于控制极的电压控制流经第一极和第二极的电流大小。第一晶体管包括第一极、第二极和控制极,在第一晶体管中,第一极与驱动晶体管的控制极耦接,第二极被配置为写入第一初始化信号。第二晶体管包括第一极、第二极和控制极,在第二晶体管中,第一极与发光器件耦接,第二极被配置为写入第二初始化信号。其中,第一晶体管包括串联的至少两个子晶体管,至少两个金踢馆的控制极相互耦接形成第一晶体管的控制极,至少一个子晶体管的沟道的宽长比小于第二晶体管的沟道的宽长比。In a first aspect, a pixel circuit is provided, including a light emitting device, a driving transistor, a first transistor and a second transistor. The driving transistor includes a first electrode, a second electrode and a control electrode. In the driving transistor, the second electrode is coupled to the light emitting device, and the driving transistor is configured to control the voltage flowing through the first electrode and the second electrode in response to the control electrode. pole current magnitude. The first transistor includes a first electrode, a second electrode and a control electrode. In the first transistor, the first electrode is coupled to the control electrode of the driving transistor, and the second electrode is configured to write a first initialization signal. The second transistor includes a first electrode, a second electrode and a control electrode. In the second transistor, the first electrode is coupled to the light emitting device, and the second electrode is configured to write a second initialization signal. Wherein, the first transistor includes at least two sub-transistors connected in series, the control electrodes of the at least two gold kick gates are coupled to each other to form the control electrode of the first transistor, and the width-length ratio of the channel of at least one sub-transistor is smaller than that of the second transistor. The width to length ratio of the road.
在一些实施例中,至少两个子晶体管中,各个子晶体管的沟道的宽长比相同。In some embodiments, in the at least two sub-transistors, the channel width to length ratio of each sub-transistor is the same.
在一些实施例中,每个子晶体管的沟道的宽度与第二晶体管的沟道的宽度相等。In some embodiments, the width of the channel of each sub-transistor is equal to the width of the channel of the second transistor.
在一些实施例中,至少一个子晶体管的沟道的长度比第二晶体管的沟道的长度大0.8~1.2μm。In some embodiments, the length of the channel of the at least one sub-transistor is 0.8˜1.2 μm greater than the length of the channel of the second transistor.
在一些实施例中,至少一个子晶体管的沟道的宽度为2.0~3.0μm,长度为2.7~4.0μm。In some embodiments, the channel of at least one sub-transistor has a width of 2.0-3.0 μm and a length of 2.7-4.0 μm.
在一些实施例中,至少一个子晶体管的沟道的宽度为2.3±0.2μm,长度为3.5±0.2μm。In some embodiments, the channel of at least one sub-transistor has a width of 2.3±0.2 μm and a length of 3.5±0.2 μm.
在一些实施例中,驱动晶体管的沟道的宽度比第二晶体管的沟道的宽度大。In some embodiments, the width of the channel of the drive transistor is greater than the width of the channel of the second transistor.
在一些实施例中,驱动晶体管的沟道的宽度为3.0±0.2μm。In some embodiments, the width of the channel of the drive transistor is 3.0±0.2 μm.
在一些实施例中,像素电路还包括电容器、第四晶体管、第三晶体管、第五晶体管、第六晶体管中的至少一个;其中,电容器包括第一极板和第二极板,第一极板与驱动晶体管的控制极耦接,第二极板被配置为写入电源电压信号;第三晶体管包括第一极、第二极和控制极,在第三晶体管中,第二极与驱动晶体管的第一极耦接,第一极被配置为写入数据信号;第四晶体管包括第一极、第二极和控制极,在第四晶体管中,第一极与驱动晶体管的第二极耦接,第二极与驱动晶体管的控制极耦接;第五晶体管包括第一极、第二极和控制极,在第五晶体管中,第二极与驱动晶体管的第一极耦接,第一极被配置为写入所述电源电压信号;第六晶体管包括第一极、第二极和控制极,在第六晶体管中,第一极与驱动晶体管的第二极耦接,第二极与发光器件耦接。In some embodiments, the pixel circuit further includes at least one of a capacitor, a fourth transistor, a third transistor, a fifth transistor, and a sixth transistor; wherein the capacitor includes a first electrode plate and a second electrode plate, and the first electrode plate Coupled with the control electrode of the driving transistor, the second electrode plate is configured to write a power supply voltage signal; the third transistor includes a first electrode, a second electrode and a control electrode, in the third transistor, the second electrode is connected to the driving transistor. The first electrode is coupled, and the first electrode is configured to write a data signal; the fourth transistor includes a first electrode, a second electrode and a control electrode, and in the fourth transistor, the first electrode is coupled to the second electrode of the driving transistor , the second pole is coupled to the control pole of the driving transistor; the fifth transistor includes a first pole, a second pole and a control pole, in the fifth transistor, the second pole is coupled to the first pole of the driving transistor, and the first pole is configured to write the power supply voltage signal; the sixth transistor includes a first pole, a second pole and a control pole, in the sixth transistor, the first pole is coupled to the second pole of the driving transistor, and the second pole is connected to the light-emitting device coupling.
第二方面,提供了一种显示面板,包括多个像素电路,每个像素电路为上述任一实施例提供的像素电路。In a second aspect, a display panel is provided, including a plurality of pixel circuits, and each pixel circuit is the pixel circuit provided in any of the foregoing embodiments.
在一些实施例中,多个像素电路包括位于第N-1行的第一像素电路和位于第N行的第二像素电路。显示面板还包括复位控制信号线。第一像素电路和第二像素电路为上述任一实施例提供的像素电路。第二像素电路中第一晶体管的控制极与第一像素电路中第二晶体管的控制极均与复位控制信号线耦接。其中,N为大于1的整数。In some embodiments, the plurality of pixel circuits includes a first pixel circuit in row N-1 and a second pixel circuit in row N. The display panel also includes reset control signal lines. The first pixel circuit and the second pixel circuit are the pixel circuits provided in any of the foregoing embodiments. The control electrode of the first transistor in the second pixel circuit and the control electrode of the second transistor in the first pixel circuit are both coupled to the reset control signal line. Wherein, N is an integer greater than 1.
在一些实施例中,在第二像素电路的第一晶体管中,各个子晶体管的控制极相互耦接并形成一体图案,该一体图案与复位控制信号线耦接。复位控制信号线、一体图案、以及第一像素电路中第二晶体管的控制极位于同一图案层中,并且,一体图案的宽度大于第二晶体管的控制极的宽度,且大于复位控制信号线的宽度。In some embodiments, in the first transistor of the second pixel circuit, the control electrodes of the respective sub-transistors are coupled to each other and form an integrated pattern, and the integrated pattern is coupled to the reset control signal line. The reset control signal line, the integrated pattern, and the control electrode of the second transistor in the first pixel circuit are located in the same pattern layer, and the width of the integrated pattern is greater than the width of the control electrode of the second transistor and greater than the width of the reset control signal line .
在一些实施例中,像素电路包括第四晶体管、第三晶体管、第五晶体管以及第六晶体管。显示面板还包括第一发光控制信号线和第二发光控制信号线,第一像素电路中第五晶体管的控制极和第六晶体管的控制极与第一发光控制信号线耦接,第二像素电路中第五晶体管的控制极和第六晶体管的控制极与第二发光控制信号线耦接。显示面板还包括第一扫描信号线和第二扫描信号线,第一像素电路中第四晶体管的控制极和第三晶体管的控制极与述第一扫描信号线耦接,第二像素电路中第四晶体管的控制极和第三晶体管的控制极与第二扫描信号线耦接。其中,第一发光控制信号线、第二发光控制信号线、第一扫描信号线、第二扫描信号线与一体图案位于同一图案层中。In some embodiments, the pixel circuit includes a fourth transistor, a third transistor, a fifth transistor, and a sixth transistor. The display panel further includes a first light-emitting control signal line and a second light-emitting control signal line, the control electrode of the fifth transistor and the control electrode of the sixth transistor in the first pixel circuit are coupled to the first light-emitting control signal line, and the second pixel circuit The control electrode of the fifth transistor and the control electrode of the sixth transistor are coupled to the second light-emitting control signal line. The display panel also includes a first scan signal line and a second scan signal line, the control electrode of the fourth transistor and the control electrode of the third transistor in the first pixel circuit are coupled to the first scan signal line, and the second pixel circuit in the second pixel circuit. The control electrodes of the four transistors and the control electrodes of the third transistor are coupled to the second scan signal line. Wherein, the first light-emitting control signal line, the second light-emitting control signal line, the first scanning signal line, the second scanning signal line and the integrated pattern are located in the same pattern layer.
在一些实施例中,像素电路包括电容器,电容器的第二极板被配置为写入电源电压信号。第一极板与一体图案位于同一图案层中。In some embodiments, the pixel circuit includes a capacitor, and the second plate of the capacitor is configured to write the power supply voltage signal. The first electrode plate and the integrated pattern are located in the same pattern layer.
第三方面,提供了一种显示装置,包括上述任一实施例提供的显示面板。In a third aspect, a display device is provided, including the display panel provided in any of the foregoing embodiments.
在晶体管中,沟道的宽长比越小,该晶体管的导通性能越差,该晶体管在截止状态下的漏电流可以越小。在本公开的实施例提供的像素电路中,在第一晶体管中,至少一个子晶体管的沟道的宽长比小于第二晶体管的沟道的宽长比,因此,相比于第二晶体管,第一晶体管整体的导通性能可以较差,在发光器件发光的过程中,第一晶体管在截止状态下的漏电流可以较小,可以改善显示画面中的亮点问题。此外,由于至少一个子晶体管的沟道的宽长比小于第二晶体管的沟道的宽长比,因此,第二晶体管的沟道的宽长比可以较大。因此,第二晶体管的导通性能可以较好,使得第二晶体管可以更好地对发光器件进行初始化,可以改善显示面板显示画面具有残像的问题。即,本公开实施例提供的像素电路可以在兼顾改善显示面板的显示画面的残像问题的前提下,改善显示面板显示画面的亮点问题。In a transistor, the smaller the width-to-length ratio of the channel, the worse the turn-on performance of the transistor, and the smaller the leakage current of the transistor in the off-state can be. In the pixel circuit provided by the embodiments of the present disclosure, in the first transistor, the width-to-length ratio of the channel of at least one sub-transistor is smaller than the width-to-length ratio of the channel of the second transistor. Therefore, compared with the second transistor, The overall conduction performance of the first transistor may be poor, and during the process of emitting light of the light-emitting device, the leakage current of the first transistor in the off state may be small, which can improve the problem of bright spots in the display screen. In addition, since the aspect ratio of the channel of the at least one sub-transistor is smaller than the aspect ratio of the channel of the second transistor, the aspect ratio of the channel of the second transistor may be larger. Therefore, the conduction performance of the second transistor can be better, so that the second transistor can better initialize the light-emitting device, and can improve the problem of afterimages in the display screen of the display panel. That is, the pixel circuit provided by the embodiments of the present disclosure can improve the problem of bright spots in the display image of the display panel on the premise of improving the afterimage problem of the display image of the display panel.
可以理解地,第二方面提供的显示面板和第三方面提供的显示装置包括上述像素电路,其所能达到的有益效果可参考上文中像素电路的有益效果,在此不再赘述。It can be understood that the display panel provided in the second aspect and the display device provided in the third aspect include the above-mentioned pixel circuit, and the beneficial effects that can be achieved can refer to the beneficial effects of the pixel circuit above, which will not be repeated here.
附图说明Description of drawings
为了更清楚地说明本发明实施例的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some of the present invention. In the embodiments, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without any creative effort.
图1为本公开的一些实施例提供的显示面板的俯视图;FIG. 1 is a top view of a display panel provided by some embodiments of the present disclosure;
图2为本公开的一些实施例提供的显示面板的结构图;FIG. 2 is a structural diagram of a display panel provided by some embodiments of the present disclosure;
图3为本公开的一些实施例提供的像素电路的等效电路图;FIG. 3 is an equivalent circuit diagram of a pixel circuit provided by some embodiments of the present disclosure;
图4为本公开的一些实施例提供的像素电路中发光器件的结构图;4 is a structural diagram of a light emitting device in a pixel circuit provided by some embodiments of the present disclosure;
图5为本公开的一些实施例提供的像素电路的等效电路图;FIG. 5 is an equivalent circuit diagram of a pixel circuit provided by some embodiments of the present disclosure;
图6为本公开的一些实施例提供的显示面板的俯视图;6 is a top view of a display panel provided by some embodiments of the present disclosure;
图7为本公开的一些实施例提供的显示面板中一图案层的俯视图;7 is a top view of a pattern layer in a display panel according to some embodiments of the present disclosure;
图8为本公开的一些实施例提供的显示面板中一图案层的俯视图;8 is a top view of a pattern layer in a display panel according to some embodiments of the present disclosure;
图9为本公开的一些实施例提供的显示面板中多个图案层的俯视图;9 is a top view of a plurality of pattern layers in a display panel according to some embodiments of the present disclosure;
图10为图9中区域B的局部放大图;Fig. 10 is a partial enlarged view of region B in Fig. 9;
图11为本公开的一些实施例提供的显示面板的结构图;FIG. 11 is a structural diagram of a display panel provided by some embodiments of the present disclosure;
图12为本公开的一些实施例提供的显示面板的俯视图;12 is a top view of a display panel according to some embodiments of the present disclosure;
图13为本公开的一些实施例提供的显示面板多个图案层的俯视图。FIG. 13 is a top view of a plurality of pattern layers of a display panel according to some embodiments of the present disclosure.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
在本发明的描述中,需要理解的是,术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。In the description of the present invention, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", The orientation or positional relationship indicated by "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying The device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and therefore should not be construed as limiting the invention.
除非上下文另有要求,否则,在整个说明书和权利要求书中,术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思,即为“包含,但不限于”。在说明书的描述中,术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外,所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。Unless the context otherwise requires, throughout the specification and claims, the term "comprise" and its other forms such as the third person singular "comprises" and the present participle "comprising" are used It is interpreted as the meaning of openness and inclusion, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" example)" or "some examples" and the like are intended to indicate that a particular feature, structure, material or characteristic related to the embodiment or example is included in at least one embodiment or example of the present disclosure. The schematic representations of the above terms are not necessarily referring to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be included in any suitable manner in any one or more embodiments or examples.
以下,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中,除非另有说明,“多个”的含义是两个或两个以上。Hereinafter, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, a feature defined as "first" or "second" may expressly or implicitly include one or more of that feature. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.
在描述一些实施例时,可能使用了“耦接”和“连接”及其衍伸的表达。例如,描述一些实施例时可能使用了术语“连接”以表明两个或两个以上部件彼此间有直接物理接触或电接触。又如,描述一些实施例时可能使用了术语“耦接”以表明两个或两个以上部件有直接物理接触或电接触。然而,术语“耦接”或“通信耦合(communicatively coupled)”也可能指两个或两个以上部件彼此间并无直接接触,但仍彼此协作或相互作用。这里所公开的实施例并不必然限制于本文内容。In describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. For example, the term "connected" may be used in describing some embodiments to indicate that two or more components are in direct physical or electrical contact with each other. As another example, the term "coupled" may be used in describing some embodiments to indicate that two or more components are in direct physical or electrical contact. However, the terms "coupled" or "communicatively coupled" may also mean that two or more components are not in direct contact with each other, but yet still co-operate or interact with each other. The embodiments disclosed herein are not necessarily limited by the content herein.
“A、B和C中的至少一个”与“A、B或C中的至少一个”具有相同含义,均包括以下A、B和C的组合:仅A,仅B,仅C,A和B的组合,A和C的组合,B和C的组合,及A、B和C的组合。"At least one of A, B, and C" has the same meaning as "at least one of A, B, or C", and both include the following combinations of A, B, and C: A only, B only, C only, A and B , A and C, B and C, and A, B, and C.
“A和/或B”,包括以下三种组合:仅A,仅B,及A和B的组合。"A and/or B" includes the following three combinations: A only, B only, and a combination of A and B.
“多个”是指至少两个。"Plurality" means at least two.
本文中“适用于”或“被配置为”的使用意味着开放和包容性的语言,其不排除适用于或被配置为执行额外任务或步骤的设备。The use of "adapted to" or "configured to" herein means open and inclusive language that does not preclude devices adapted or configured to perform additional tasks or steps.
另外,“基于”的使用意味着开放和包容性,因为“基于”一个或多个所述条件或值的过程、步骤、计算或其他动作在实践中可以基于额外条件或超出所述的值。Additionally, the use of "based on" is meant to be open and inclusive, as a process, step, calculation or other action "based on" one or more of the stated conditions or values may in practice be based on additional conditions or beyond the stated values.
如本文所使用的那样,“约”、“近似”或“大致”包括所阐述的值以及处于特定值的可接受偏差范围内的平均值,其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以及与特定量的测量相关的误差(即,测量系统的局限性)所确定。As used herein, "about", "approximately" or "approximately" includes the stated value as well as the average value within an acceptable range of deviation from the specified value, as described by one of ordinary skill in the art Determined taking into account the measurement in question and the errors associated with the measurement of a particular quantity (ie, limitations of the measurement system).
本文参照作为理想化示例性附图的剖视图和/或平面图描述了示例性实施方式。在附图中,为了清楚,放大了层和区域的厚度。因此,可设想到由于例如制造技术和/或公差引起的相对于附图的形状的变动。因此,示例性实施方式不应解释为局限于本文示出的区域的形状,而是包括因例如制造而引起的形状偏差。例如,示为矩形的蚀刻区域通常将具有弯曲的特征。因此,附图中所示的区域本质上是示意性的,且它们的形状并非旨在示出设备的区域的实际形状,并且并非旨在限制示例性实施方式的范围。Exemplary embodiments are described herein with reference to cross-sectional and/or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Accordingly, variations from the shapes of the drawings due to, for example, manufacturing techniques and/or tolerances, are contemplated. Thus, example embodiments should not be construed as limited to the shapes of the regions shown herein, but to include deviations in shapes due, for example, to manufacturing. For example, an etched area shown as a rectangle will typically have curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of example embodiments.
本文中的晶体管可以是N型晶体管也可以是P型晶体管,本公开的实施例对此不作特别限制。下文将以晶体管为P型晶体管为例。可以理解地,晶体管为N型晶体管也可以实现本公开的方案并获得相应的技术效果。The transistors herein may be N-type transistors or P-type transistors, which are not particularly limited in the embodiments of the present disclosure. Hereinafter, it will be taken as an example that the transistor is a P-type transistor. It can be understood that even if the transistor is an N-type transistor, the solution of the present disclosure can also be implemented and corresponding technical effects can be obtained.
本公开的一些实施例提供了一种显示装置。显示装置为具有图像(包括:静态图像或动态图像,其中,动态图像可以是视频)显示功能的产品。例如,显示装置可以是:显示器,电视机,广告牌,数码相框,具有显示功能的激光打印机,电话,手机,个人数字助理(PersonalDigital Assistant,PDA),数码相机,便携式摄录机,取景器,导航仪,车辆,大面积墙壁,家电,信息查询设备(如电子政务、银行、医院、电力等部门的业务查询设备),监视器等中的任一种。Some embodiments of the present disclosure provide a display device. The display device is a product having the function of displaying images (including: still images or moving images, wherein the moving images may be videos). For example, the display device may be: a monitor, a television, a billboard, a digital photo frame, a laser printer with a display function, a telephone, a mobile phone, a Personal Digital Assistant (PDA), a digital camera, a camcorder, a viewfinder, Any of navigators, vehicles, large-area walls, home appliances, information inquiry equipment (such as business inquiry equipment in e-government, banks, hospitals, electric power and other departments), monitors, etc.
在一些实施例中,显示装置可以包括显示面板,还可以包括与显示面板耦接的驱动电路。驱动电路被配置为向显示面板提供电信号。示例性地,驱动电路可以包括:数据驱动电路(例如可以是源极驱动电路,Source Driver IC),被配置为向显示面板提供数据信号(也称为数据驱动信号);扫描驱动电路,被配置为向显示面板提供扫描信号。驱动电路还可以包括时序控制电路(也可以称为时序控制器,TimerControl Register,简称为TCON),时序控制电路可以与数据驱动电路和扫描驱动电路耦接,被配置为向扫描驱动电路提供控制信号并且向数据驱动电路提供控制信号和图像数据。在一些可能的实现方式中,扫描驱动电路可以集成在显示面板上。此时,也可以说,显示面板包括扫描驱动电路,扫描驱动电路可以称为GOA(Gate Driver on Array,设置在阵列基板上的扫描驱动电路)。In some embodiments, the display device may include a display panel, and may further include a driving circuit coupled to the display panel. The driving circuit is configured to provide electrical signals to the display panel. Exemplarily, the driving circuit may include: a data driving circuit (for example, it may be a source driving circuit, Source Driver IC), configured to provide data signals (also referred to as data driving signals) to the display panel; a scan driving circuit, configured To provide the scan signal to the display panel. The driving circuit may further include a timing control circuit (also referred to as a timing controller, Timer Control Register, or TCON for short), the timing control circuit may be coupled to the data driving circuit and the scan driving circuit, and configured to provide control signals to the scan driving circuit And a control signal and image data are supplied to the data driving circuit. In some possible implementations, the scan driving circuit may be integrated on the display panel. At this time, it can also be said that the display panel includes a scan drive circuit, and the scan drive circuit can be called GOA (Gate Driver on Array, a scan drive circuit disposed on an array substrate).
本公开的一些实施例还提供了一种显示面板,该显示面板可以包含在上述任一实施例提供的显示装置中。显示面板可以是OLED(Organic Light Emitting Diode,有机发光二极管)显示面板、QLED(Quantum Dot Light Emitting Diodes,量子点发光二极管)显示面板、微LED(包括:miniLED或microLED,LED为发光二极管)显示面板中的一种。Some embodiments of the present disclosure also provide a display panel, which may be included in the display device provided by any of the above embodiments. The display panel may be an OLED (Organic Light Emitting Diode, organic light-emitting diode) display panel, a QLED (Quantum Dot Light Emitting Diodes, quantum dot light-emitting diode) display panel, a micro-LED (including: miniLED or microLED, LED is a light-emitting diode) display panel one of the.
图1示出了本公开的一些实施例提供的显示面板的结构。参见图1,显示面板1可以具有显示区AA和位于显示区AA的至少一侧(例如,一侧;又如,四周,即包括上下两侧和左右两侧)的周边区SA。显示面板1包括设置在显示区AA中的多个像素电路10。像素电路10可以包括发光器件100和控制该发光器件100发光的像素驱动电路200。其中,像素驱动电路200可以被配置为响应于接收到的数据信号和扫描信号,驱动发光器件100发光,发光器件100发光的亮度可以与数据信号的电压呈正相关。在显示区AA中,像素驱动电路200可以呈阵列分布。FIG. 1 shows the structure of a display panel provided by some embodiments of the present disclosure. Referring to FIG. 1 , the
在一些实施例中,显示面板1还可以包括多种信号线。示例性地,多种信号线可以位于显示区中,并与显示区中的像素电路耦接。具体地,参见图2,图2为图1中的显示面板的局部放大图。一像素电路10(例如每个像素电路10)可以与多种信号线耦接,每种信号线可以被配置为向像素电路10写入一种电信号。In some embodiments, the
在一些实施例中,多种信号线可以包括数据线D、第一电源线EL1、第二电源线EL2、复位控制信号线R、发光控制信号线E、扫描信号线G中的至少一种。多种信号线还可以包括初始化信号线Vi(图2中未示出)。其中,数据线D可以被配置为向像素电路10写入数据信号Da;第一电源线EL1可以被配置为向像素电路10写入第一电源电压信号ELVDD;第二电源线EL2可以被配置为向像素电路10写入第二电源电压信号ELVSS;复位控制信号线R可以被配置为向像素电路10写入复位控制信号Sc1;发光控制信号线E可以被配置为向像素电路10写入发光控制信号Sc2;扫描信号线G可以被配置为向像素电路10写入扫描信号Sc3;初始化信号线Vi可以被配置为向像素电路10写入初始化信号Vinit(图中未示出)。其中,数据信号Da、第一电源电压信号ELVDD、第二电源电压信号ELVSS、复位控制信号Sc1、发光控制信号Sc2、扫描信号Sc3、以及初始化信号Vinit可以为电压信号,也可以是其他类型的电信号,本公开的实施例对此不作限制。其中,第一电源电压信号ELVDD的电压可以大于第二电源电压信号ELVSS的电压。此外需要说明的是,图2中信号线对应附图标记的下角标用于表示该信号线的序号。例如DM表示第M条数据线。In some embodiments, the various signal lines may include at least one of a data line D, a first power line EL1, a second power line EL2, a reset control signal line R, a light emission control signal line E, and a scan signal line G. The various signal lines may also include an initialization signal line Vi (not shown in FIG. 2 ). The data line D may be configured to write the data signal Da to the
本公开的一些实施例还提供了一种像素电路,该像素电路可以是上述任一实施例的显示面板中的像素电路。Some embodiments of the present disclosure also provide a pixel circuit, and the pixel circuit may be the pixel circuit in the display panel of any of the above-mentioned embodiments.
图3为像素电路的等效电路图。参见图3,基于上文的说明,像素电路10可以包括发光器件100和与发光器件100耦接的像素驱动电路。其中,发光器件100例如可以是有机发光二极管OLED、量子点发光二极管QLED、或者是发光二极管LED,但不限于此。本公开的实施例对发光器件100的类型不作限制,即发光器件100可以是任何其他发光器件(例如通过放电发光的发光器件),只要它们能响应于电信号而发射光线,使得显示面板能够显示画面即可。在一些实施例中,发光器件100是OLED。FIG. 3 is an equivalent circuit diagram of a pixel circuit. Referring to FIG. 3 , based on the above description, the
在一些实施例中,参见图4,发光器件100可以是OLED,发光器件100可以包括第一电极110、第二电极130、以及位于第一电极110和第二电极130之间的发光功能层120。In some embodiments, referring to FIG. 4 , the
示例性地,第一电极110可以与像素驱动电路耦接,像素驱动电路可以向第一电极110提供电压可变的电信号;第二电极130可以与一电源线耦接,该电源线可以向第二电极130提供固定电压。示例性地,第一电极110是阳极,相应地,第二电极130是阴极;第一电极110被配置为通过像素驱动电路与第一电源线(被配置为传输图3中的第一电源信号ELVDD)耦接,第二电极130与第二电源线(被配置为传输图3中的第二电源信号ELVSS)耦接。又示例性地,第一电极110是阴极,相应地,第二电极130是阳极;第一电极110通过像素驱动电路与第二电源线耦接,第二电极130与第一电源线耦接。Exemplarily, the
发光功能层120可以具有单层结构,也可以具有多层结构。示例性地,发光功能层120可以包括发光层,发光功能层还可以包括:位于阳极和发光层之间的空穴注入层、空穴传输层、电子阻挡层中的至少一个,也可以还包括:位于发光层与阴极之间的空穴阻挡层、电子传输层、电子注入层中的至少一个。其中,一个发光器件100中的发光层可以为红光发光层、绿光发光层、蓝光发光层或白光发光层。The light-emitting
需要说明的是,其他类型的发光器件(例如QLED、或LED)的结构也可以参照上文所述的OLED的结构,对于其他类型的发光器件的具体结构便不再赘述。It should be noted that the structure of other types of light-emitting devices (eg, QLED or LED) can also refer to the structure of the OLED described above, and the specific structures of other types of light-emitting devices will not be repeated.
继续参见图3,像素驱动电路可以包括多个晶体管T。具体地,像素驱动电路可以包括驱动晶体管Td、第一晶体管T1、以及第二晶体管T2。Continuing to refer to FIG. 3 , the pixel driving circuit may include a plurality of transistors T. As shown in FIG. Specifically, the pixel driving circuit may include a driving transistor Td, a first transistor T1, and a second transistor T2.
其中,驱动晶体管Td包括第一极Td1、第二极Td2和控制极Td3。驱动晶体管Td被配置为响应于控制极Td3的电压控制流经第一极Td1和第二极Td2的电流大小。示例性地,在驱动晶体管Td中,控制极Td3可以被配置为写入电信号,响应于该电信号的电压,驱动晶体管Td可以控制流经第一极Td1和第二极Td2的电流大小,该电信号的电压大小不同,流经第一极Td1和第二极Td2的电流大小不同。在一些可能的实现方式中,写入控制极Td3的电信号可以为数据信号Da或者数据关联信号Da’(即为与数据信号Da有关的电信号),这样,控制极Td3上的电压可以与写入像素驱动电路中的数据信号Da的电压Vdata有关,例如,该电信号的电压大小与数据信号Da的电压Vdata的大小成正相关。基于此,可以通过向像素驱动电路提供不同的数据信号Da来控制流经第一极Td1和第二极Td2的电流大小。The driving transistor Td includes a first electrode Td1, a second electrode Td2 and a control electrode Td3. The driving transistor Td is configured to control the magnitude of the current flowing through the first electrode Td1 and the second electrode Td2 in response to the voltage of the control electrode Td3. Exemplarily, in the driving transistor Td, the control electrode Td3 may be configured to write an electrical signal, and in response to the voltage of the electrical signal, the driving transistor Td may control the magnitude of the current flowing through the first electrode Td1 and the second electrode Td2, The magnitude of the voltage of the electrical signal is different, and the magnitude of the current flowing through the first pole Td1 and the second pole Td2 is different. In some possible implementations, the electrical signal written to the control electrode Td3 may be a data signal Da or a data-related signal Da' (ie, an electrical signal related to the data signal Da), so that the voltage on the control electrode Td3 may be the same as that of the control electrode Td3. The voltage Vdata of the data signal Da written in the pixel driving circuit is related, for example, the voltage magnitude of the electrical signal is positively correlated with the magnitude of the voltage Vdata of the data signal Da. Based on this, the magnitude of the current flowing through the first pole Td1 and the second pole Td2 can be controlled by providing different data signals Da to the pixel driving circuit.
第二极Td2与发光器件100耦接。示例性地,第二极Td2可以与发光器件100的第一电极耦接,使得驱动晶体管Td和发光器件100串联在第一电源线EL1和第二电源线EL2之间的线路上。由于驱动晶体管Td和发光器件100串联,因此,流经第一极Td1和第二极Td2的电流可以流入发光器件100,可以通过该电流驱动发光器件100发光,具体地,通过该电流可以控制发光器件100的发光亮度。即,在像素电路10中,流经驱动晶体管的第一极Td1和第二极Td2的电流大小不同,发光器件100的发光亮度可以相应地变化。The second pole Td2 is coupled to the
在一些实施例中,驱动晶体管的第一极Td1可以与第一电源线EL1耦接,使得驱动晶体管的第一极Td1可以写入第一电源电压信号ELVDD。在一些可能的实现方式中,驱动晶体管的第二极Td2与发光器件100的第一电极耦接,发光器件100的第二电极与第二电源线EL2耦接,这样,驱动晶体管的第一极Td1可以与第一电源线EL1耦接,驱动晶体管的第二极Td2可以通过发光器件100与第二电源线EL2耦接。第一电源线EL1上的第一电源电压信号ELVDD和第二电源线EL2上的第二电源电压信号ELVSS之间可以具有电压差,从而可以产生流经驱动晶体管的第一极Td1和第二极Td2的电流,以及流经发光器件100的电流。In some embodiments, the first electrode Td1 of the driving transistor may be coupled to the first power supply line EL1, so that the first electrode Td1 of the driving transistor may write the first power supply voltage signal ELVDD. In some possible implementations, the second electrode Td2 of the driving transistor is coupled to the first electrode of the
第一晶体管T1包括第一极T11、第二极T12和控制极T13。在第一晶体管T1中,第一极T11与驱动晶体管的控制极Td3耦接,第二极T12被配置为写入第一初始化信号Vinit1。这样,在第一晶体管T1处于导通状态时,通过第一晶体管T1,可以向驱动晶体管的控制极Td3写入第一初始化信号Vinit1。通过向驱动晶体管的控制极Td3写入第一初始化信号Vinit1,可以将驱动晶体管Td初始化,使得在后续的工作阶段中,驱动晶体管Td可以从该初始化状态切换至其他工作状态。例如,在后续的工作阶段中,驱动晶体管控制极Td3的电压可以从初始化信号Vinit1对应的电压切换至其他工作电压。这样,可以改善显示面板的残像现象,提高显示稳定性。The first transistor T1 includes a first electrode T11, a second electrode T12 and a control electrode T13. In the first transistor T1, the first electrode T11 is coupled to the control electrode Td3 of the driving transistor, and the second electrode T12 is configured to write the first initialization signal Vinit1. In this way, when the first transistor T1 is in an on state, the first initialization signal Vinit1 can be written to the control electrode Td3 of the driving transistor through the first transistor T1. By writing the first initialization signal Vinit1 to the control electrode Td3 of the driving transistor, the driving transistor Td can be initialized, so that the driving transistor Td can be switched from the initialization state to other operating states in subsequent working stages. For example, in the subsequent working stage, the voltage of the control electrode Td3 of the driving transistor can be switched from the voltage corresponding to the initialization signal Vinit1 to other working voltages. In this way, the afterimage phenomenon of the display panel can be improved, and the display stability can be improved.
在一些可能的实现方式中,初始化信号线包括第一初始化信号线,第一初始化信号线被配置为向像素电路10写入第一初始化信号Vinit1。第一晶体管的第二极T12可以与第一初始化信号线耦接,使得第一初始化信号线输出的第一初始化信号Vinit可以写入第一晶体管的第二极T12。In some possible implementations, the initialization signal line includes a first initialization signal line, and the first initialization signal line is configured to write the first initialization signal Vinit1 to the
在一些实施例中,第一晶体管的控制极T13可以被配置为控制第一晶体管T1的导通和截止,即,响应于控制极T13的电压,第一晶体管T1可以导通和截止。示例性地,第一晶体管的控制极T13可以与复位控制信号线耦接,复位控制信号线输出的复位控制信号Sc1可以写入控制极T13。响应于该复位控制信号Sc1的电压,第一晶体管T1可以导通和截止。In some embodiments, the control electrode T13 of the first transistor may be configured to control the turn-on and turn-off of the first transistor T1, ie, the first transistor T1 may be turned on and off in response to the voltage of the control electrode T13. Exemplarily, the control electrode T13 of the first transistor may be coupled to the reset control signal line, and the reset control signal Sc1 output by the reset control signal line may be written into the control electrode T13. In response to the voltage of the reset control signal Sc1, the first transistor T1 may be turned on and off.
第一晶体管T1包括串联的至少两个(例如,两个;又如,三个以上)子晶体管,至少两个子晶体管包括子晶体管T1a和子晶体管T1b。类似地,子晶体管包括第一极、第二极和控制极。例如,子晶体管T1a包括第一极T1a1、第二极T1a2和控制极T1a3;子晶体管T1b包括第一极T1b1、第二极T1b2和控制极T1b3。The first transistor T1 includes at least two (eg, two; another example, more than three) sub-transistors connected in series, and the at least two sub-transistors include a sub-transistor T1 a and a sub-transistor T1 b. Similarly, the sub-transistor includes a first electrode, a second electrode and a control electrode. For example, the sub-transistor T1a includes a first electrode T1a1, a second electrode T1a2 and a control electrode T1a3; the sub-transistor T1b includes a first electrode T1b1, a second electrode T1b2 and a control electrode T1b3.
串联的至少两个(例如,两个;又如,三个以上)子晶体管的控制极相互耦接,作为第一晶体管的控制极T13。示例性地,第一晶体管T1包括串联的两个子晶体管,即子晶体管T1a和子晶体管T1b。子晶体管T1a的控制极T1a3和子晶体管T1b的控制极T1b3相互耦接,作为第一晶体管的控制极T13。响应于控制极T13的电压,子晶体管T1a和子晶体管T1b可以同时导通和同时截止。Control electrodes of at least two (eg, two; or more than three) sub-transistors connected in series are coupled to each other, and serve as the control electrodes T13 of the first transistor. Exemplarily, the first transistor T1 includes two sub-transistors connected in series, that is, a sub-transistor T1a and a sub-transistor T1b. The control electrode T1a3 of the sub-transistor T1a and the control electrode T1b3 of the sub-transistor T1b are coupled to each other and serve as the control electrode T13 of the first transistor. In response to the voltage of the gate electrode T13, the sub-transistor T1a and the sub-transistor T1b may be turned on and turned off at the same time.
第二晶体管T2可以包括第一极T21、第二极T22和控制极T23。在第二晶体管T2中,第一极T21与发光器件100耦接,示例性地,第一极T21可以与发光器件100的第一电极耦接。第二极T22被配置为写入第二初始化信号Vinit2。这样,在第二晶体管T2处于导通状态时,通过第二晶体管T2,可以向发光器件100写入第二初始化信号Vinit2。通过向发光器件100写入第二初始化信号Vinit2,可以将发光器件100初始化,使得在后续的工作阶段中,发光器件100可以从该初始化状态切换至其他工作状态。例如,在后续的工作阶段中,发光器件100第一电极上的电压可以从第二初始化信号Vinit2对应的电压切换至其他工作电压。在一些可能的实现方式中,第二初始化信号Vinit2可以是低压的电信号,当向发光器件100的第一电极写入低压电信号时,发光器件100中的驱动电流可以较小或没有驱动电流,使得发光器件100发光亮度较小或不发光,即包含该发光器件100的像素电路10可以显示黑色色块。在后续的工作阶段中,该像素电路10从显示黑色色块的状态切换至显示其他颜色色块的状态。这样,可以改善显示面板显示画面的残像问题,提高显示稳定性。The second transistor T2 may include a first electrode T21, a second electrode T22 and a control electrode T23. In the second transistor T2 , the first electrode T21 is coupled with the
在一些可能的实现方式中,初始化信号线还包括第二初始化信号线,第二初始化信号线被配置为向像素电路10写入第二初始化信号Vinit2。第二晶体管的第二极T22可以与第二初始化信号线耦接,使得第二初始化信号线输出的第二初始化信号Vinit2可以写入第二晶体管的第二极T22。In some possible implementations, the initialization signal line further includes a second initialization signal line, and the second initialization signal line is configured to write the second initialization signal Vinit2 to the
在一些实施例中,第二晶体管的控制极T23可以被配置为控制第二晶体管T2的导通和截止,即,响应于控制极T23的电压,第二晶体管T2可以导通和截止。示例性地,第二晶体管的控制极T23可以与复位控制信号线耦接,复位控制信号线输出的复位控制信号Sc1可以写入控制极T23。响应于该复位控制信号Sc1的电压,第二晶体管T2可以导通和截止。In some embodiments, the control electrode T23 of the second transistor may be configured to control the turn-on and turn-off of the second transistor T2, ie, the second transistor T2 may be turned on and off in response to the voltage of the control electrode T23. Exemplarily, the control electrode T23 of the second transistor may be coupled to the reset control signal line, and the reset control signal Sc1 output by the reset control signal line may be written into the control electrode T23. In response to the voltage of the reset control signal Sc1, the second transistor T2 may be turned on and off.
基于像素电路10的上述结构,示例性地,像素电路10的工作流程可以包括:对驱动晶体管Td进行初始化的阶段、对发光器件100进行初始化的阶段、数据写入阶段、以及发光阶段。Based on the above structure of the
在对驱动晶体管Td进行初始化的阶段,第一晶体管T1导通。通过第一晶体管T1,第一初始化信号Vinit1可以写入驱动晶体管Td的控制极Td3,从而对驱动晶体管Td进行初始化。In the stage of initializing the drive transistor Td, the first transistor T1 is turned on. Through the first transistor T1, the first initialization signal Vinit1 can be written into the control electrode Td3 of the driving transistor Td, thereby initializing the driving transistor Td.
在对发光器件100进行初始化的阶段,第二晶体管T2导通,通过第二晶体管T2,第二初始化信号Vinit2可以写入发光器件100,例如,第二初始化信号Vinit2可以写入发光器件100的第一电极,从而对发光器件100进行初始化。In the stage of initializing the light-emitting
在数据写入阶段,第一晶体管T1处于截止状态,驱动晶体管的控制极Td3写入电信号,示例性地,该电信号可以为数据信号Da或者数据关联信号Da’。In the data writing stage, the first transistor T1 is in an off state, and the control electrode Td3 of the driving transistor writes an electrical signal, for example, the electrical signal may be a data signal Da or a data associated signal Da'.
在发光阶段,第一晶体管T1处于截止状态,并且,第二晶体管T2处于截止状态。在驱动晶体管Td中,响应于驱动晶体管的控制极Td3的电压,驱动晶体管Td导通,生成驱动发光器件100发光的电流,该电流被输出至发光器件100,使得发光器件100发光。In the light-emitting phase, the first transistor T1 is in an off state, and the second transistor T2 is in an off state. In the driving transistor Td, in response to the voltage of the gate electrode Td3 of the driving transistor, the driving transistor Td is turned on to generate a current for driving the
如上文所述,驱动晶体管Td可以响应于控制极Td3的电压控制流经第一极Td1和第二极Td2的电流大小,进而控制发光器件100的发光亮度,控制极Td3上的电压不同,发光器件100的发光亮度可以变化。在一些相关技术中,第一晶体管在截止状态下的漏电流较大,即,第一晶体管在截止的状态下,流经第一晶体管的第一极和第二极之间的电流较大。又因为第一晶体管的第一极与驱动晶体管的控制极Td3耦接,因此,在发光阶段,由于该漏电流,驱动晶体管的控制极Td3上的电压可以减小。以驱动晶体管Td为P型晶体管为例,由于驱动晶体管的控制极Td3的电压减小,会导致相关技术的像素电路中驱动发光器件100发光的电流较大,使得发光器件100的亮度过大,进而造成该像素电路显示的色块过亮,使得显示面板的显示画面中存在亮点。As described above, the driving transistor Td can control the magnitude of the current flowing through the first electrode Td1 and the second electrode Td2 in response to the voltage of the control electrode Td3, thereby controlling the light-emitting brightness of the light-emitting
为了解决上述问题,在本公开的一些实施例提供的像素电路中,在第一晶体管T1中,至少一个子晶体管的沟道的宽长比小于第二晶体管T2的沟道的宽长比。对于一晶体管而言,沟道的宽长比越小,该晶体管的导通性能越差,例如,该晶体管的阈值电压Vth可以越大。以晶体管为P型晶体管为例,则需要在其控制极上写入更低的电压才可以使得该晶体管导通。此外,沟道的宽长比越小,由于该晶体管的导通性能变差,因此,该晶体管在截止状态下的漏电流可以越小。基于此,由于第一晶体管中至少一个子晶体管的沟道的宽长比小于第二晶体管的沟道的宽长比,因此,相比于第二晶体管,第一晶体管整体的导通性能可以较差,在发光器件发光的过程中,第一晶体管在截止状态下的漏电流可以较小,可以改善上文所述的亮点问题。In order to solve the above problem, in the pixel circuit provided by some embodiments of the present disclosure, in the first transistor T1, the width to length ratio of the channel of at least one sub-transistor is smaller than the width to length ratio of the channel of the second transistor T2. For a transistor, the smaller the aspect ratio of the channel, the worse the conduction performance of the transistor, for example, the greater the threshold voltage Vth of the transistor can be. Taking the transistor as a P-type transistor as an example, a lower voltage needs to be written on the control electrode to make the transistor turn on. In addition, the smaller the width-to-length ratio of the channel, the smaller the leakage current of the transistor in the off state can be because the on-performance of the transistor is deteriorated. Based on this, since the width-to-length ratio of the channel of at least one sub-transistor in the first transistor is smaller than the width-to-length ratio of the channel of the second transistor, the overall turn-on performance of the first transistor can be better than that of the second transistor. Poor, in the process of emitting light of the light-emitting device, the leakage current of the first transistor in the off state can be small, which can improve the above-mentioned bright spot problem.
此外,由于至少一个子晶体管的沟道的宽长比小于第二晶体管的沟道的宽长比,因此,第二晶体管的沟道的宽长比可以较大。如上文所述,第二晶体管可以被配置为将发光器件初始化,可以改善显示面板的残像现象。由于第二晶体管的沟道的宽长比可以较大,因此,第二晶体管的导通性能可以较好,不会影响第二晶体管对发光器件的初始化。即,本公开实施例提供的像素电路可以在兼顾改善显示面板显示画面的残像问题的前提下,改善显示面板显示画面的亮点问题。In addition, since the aspect ratio of the channel of the at least one sub-transistor is smaller than the aspect ratio of the channel of the second transistor, the aspect ratio of the channel of the second transistor may be larger. As described above, the second transistor can be configured to initialize the light emitting device, which can improve the afterimage phenomenon of the display panel. Since the width to length ratio of the channel of the second transistor can be larger, the conduction performance of the second transistor can be better, and the initialization of the light-emitting device by the second transistor will not be affected. That is, the pixel circuit provided by the embodiment of the present disclosure can improve the problem of bright spots in the display image of the display panel on the premise of taking into account the improvement of the afterimage problem of the display image of the display panel.
在一些实施例中,在第一晶体管T1的至少两个子晶体管中,各个子晶体管的沟道的宽长比相同。即,各个子晶体管的沟道的宽长比相同,且均小于第二晶体管T2的宽长比。这样,可以进一步减小第一晶体管T1整体的沟道的宽长比,从而进一步地减小第一晶体管T1在截止状态下的漏电流,使得亮点问题得到更好的改善。In some embodiments, in the at least two sub-transistors of the first transistor T1, the width-to-length ratios of the channels of the respective sub-transistors are the same. That is, the width-to-length ratios of the channels of the respective sub-transistors are the same, and all are smaller than the width-to-length ratio of the second transistor T2. In this way, the width to length ratio of the entire channel of the first transistor T1 can be further reduced, thereby further reducing the leakage current of the first transistor T1 in the off state, so that the bright spot problem can be better improved.
在一些实施例中,像素电路还可以包括电容器、第三晶体管、第四晶体管、第五晶体管、第六晶体管中的至少一个。示例性地,图5为一种像素电路的等效电路图,示出了上述各个元件之间的连接关系。下文将参照图5分别对上述元件进行详细说明。In some embodiments, the pixel circuit may further include at least one of a capacitor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. Exemplarily, FIG. 5 is an equivalent circuit diagram of a pixel circuit, showing the connection relationship between the above-mentioned various elements. The above-mentioned elements will be described in detail below with reference to FIG. 5 , respectively.
电容器C包括第一极板S1和第二极板S2,第一极板S1与驱动晶体管的控制极Td3耦接,第二极板S2被配置为写入第一电源电压信号ELVDD。示例性地,第二极板S2可以与第一电源线EL1耦接,第一电源线EL1输出的第一电源电压信号ELVDD可以写入电容器的第二极板S2。电容器C可以被配置为存储电信号,在发光器件100发光阶段时该电信号可以写入驱动晶体管的控制极Td3,使得驱动晶体管可以响应于该电信号生成驱动发光器件100发光的电流。The capacitor C includes a first plate S1 and a second plate S2, the first plate S1 is coupled to the control electrode Td3 of the driving transistor, and the second plate S2 is configured to write the first power supply voltage signal ELVDD. Exemplarily, the second plate S2 may be coupled to the first power line EL1, and the first power supply voltage signal ELVDD output by the first power line EL1 may be written into the second plate S2 of the capacitor. The capacitor C may be configured to store an electrical signal, which may be written to the control electrode Td3 of the driving transistor during the light-emitting stage of the light-emitting
第三晶体管T3包括第一极T31、第二极T32和控制极T33。在第三晶体管T3中,第二极T32与驱动晶体管的第一极Td1耦接,第一极T31被配置为写入数据信号Da。示例性地,第一极T31可以与数据线D耦接,数据线D输出的数据信号Da可以写入第一极T31。控制极T33可以被配置为控制第三晶体管T3的导通和截止,即,响应于控制极T33的电压,第三晶体管T3可以导通和截止。示例性地,第三晶体管的控制极T33可以与扫描信号线耦接,扫描信号线输出的扫描信号Sc3可以写入第三晶体管的控制极T33,响应于该扫描信号Sc3,第三晶体管T3可以导通和截止。The third transistor T3 includes a first electrode T31, a second electrode T32 and a control electrode T33. In the third transistor T3, the second electrode T32 is coupled to the first electrode Td1 of the driving transistor, and the first electrode T31 is configured to write the data signal Da. Exemplarily, the first pole T31 may be coupled to the data line D, and the data signal Da output by the data line D may be written into the first pole T31. The control electrode T33 may be configured to control the turn-on and turn-off of the third transistor T3, that is, the third transistor T3 may be turned on and turned off in response to the voltage of the control electrode T33. Exemplarily, the control electrode T33 of the third transistor may be coupled to the scan signal line, the scan signal Sc3 output by the scan signal line may be written into the control electrode T33 of the third transistor, and in response to the scan signal Sc3, the third transistor T3 may on and off.
第四晶体管T4包括第一极T41、第二极T42和控制极T43。在第四晶体管T4中,第一极T41与驱动晶体管的第二极Td2耦接,第二极T42与驱动晶体管的控制极Td3耦接。由于第三晶体管T3和第四晶体管T4的上述结构,第三晶体管T3的第二极T32可以通过驱动晶体管Td和第四晶体管T4与驱动晶体管的控制极Td3耦接。第四晶体管的控制极T43可以被配置为控制第四晶体管T4的导通和截止,即,响应于控制极T43的电压,第四晶体管T4可以导通和截止。示例性地,第四晶体管的控制极T43可以与扫描信号线耦接,扫描信号线输出的扫描信号Sc3可以写入第四晶体管的控制极T43,响应于该扫描信号Sc3,第四晶体管可以导通和截止。在一些实施例中,一扫描信号线可以与第三晶体管的控制极T33耦接,还可以与第四晶体管的控制极T43耦接,因此,第三晶体管T3和第四晶体管T4可以是同时导通或同时截止的。在另一些实施例中,第三晶体管T3可以与一扫描信号线耦接,第四晶体管T4可以与另一扫描信号线耦接,这样,通过两条扫描信号线,可以对第三晶体管T3和第四晶体管T4分别进行控制。The fourth transistor T4 includes a first electrode T41, a second electrode T42 and a control electrode T43. In the fourth transistor T4, the first electrode T41 is coupled to the second electrode Td2 of the driving transistor, and the second electrode T42 is coupled to the control electrode Td3 of the driving transistor. Due to the above structures of the third transistor T3 and the fourth transistor T4, the second electrode T32 of the third transistor T3 can be coupled to the control electrode Td3 of the driving transistor through the driving transistor Td and the fourth transistor T4. The control electrode T43 of the fourth transistor may be configured to control turn-on and turn-off of the fourth transistor T4, ie, the fourth transistor T4 may be turned on and off in response to the voltage of the control electrode T43. Exemplarily, the control electrode T43 of the fourth transistor may be coupled to the scan signal line, the scan signal Sc3 output by the scan signal line may be written into the control electrode T43 of the fourth transistor, and in response to the scan signal Sc3, the fourth transistor may conduct. On and off. In some embodiments, a scan signal line may be coupled to the control electrode T33 of the third transistor, and may also be coupled to the control electrode T43 of the fourth transistor. Therefore, the third transistor T3 and the fourth transistor T4 may be simultaneously conducted. through or at the same time. In other embodiments, the third transistor T3 may be coupled to a scan signal line, and the fourth transistor T4 may be coupled to another scan signal line. In this way, through the two scan signal lines, the third transistor T3 and the The fourth transistors T4 are respectively controlled.
第五晶体管T5包括第一极T51、第二极T52和控制极T53。在第五晶体管T5中,第二极T52与驱动晶体管的第一极Td1耦接,第一极T51被配置为写入第一电源电压信号ELVDD。示例性地,第一极T51可以与第一电源线EL1耦接,第一电源线EL1输出的第一电源信号ELVDD可以写入第五晶体管的第一极T51。因此,当第五晶体管T5导通时,第一电源信号ELVDD可以通过第五晶体管T5而写入驱动晶体管的第一极Td1。第五晶体管的控制极T53可以被配置为控制第五晶体管T5的导通和截止,即,响应于控制极T53的电压,第五晶体管T5可以导通和截止。示例性地,第五晶体管的控制极T53可以与发光控制信号线耦接,发光控制信号线输出的发光控制信号Sc2可以写入第五晶体管的控制极T53,响应于该发光控制信号Sc2,第五晶体管可以导通和截止。The fifth transistor T5 includes a first electrode T51, a second electrode T52 and a control electrode T53. In the fifth transistor T5, the second electrode T52 is coupled to the first electrode Td1 of the driving transistor, and the first electrode T51 is configured to write the first power supply voltage signal ELVDD. Exemplarily, the first pole T51 may be coupled to the first power supply line EL1, and the first power supply signal ELVDD output by the first power supply line EL1 may be written into the first pole T51 of the fifth transistor. Therefore, when the fifth transistor T5 is turned on, the first power signal ELVDD may be written to the first electrode Td1 of the driving transistor through the fifth transistor T5. The control electrode T53 of the fifth transistor may be configured to control turn-on and turn-off of the fifth transistor T5, ie, the fifth transistor T5 may be turned on and off in response to the voltage of the control electrode T53. Exemplarily, the control electrode T53 of the fifth transistor may be coupled to the light-emitting control signal line, and the light-emitting control signal Sc2 output by the light-emitting control signal line may be written into the control electrode T53 of the fifth transistor. Five transistors can be turned on and off.
第六晶体管T6包括第一极T61、第二极T62和控制极T63。在第六晶体管T6中,第一极T61与驱动晶体管的第二极Td2耦接,第二极T62与发光器件100耦接,例如,与发光器件100的第一电极耦接。这样,在第六晶体管T6导通时,从驱动晶体管Td输出的电流可以输入发光器件100,进而驱动发光器件100发光。第六晶体管的控制极T63可以被配置为控制第六晶体管T6的导通和截止,即,响应于控制极T63的电压,第六晶体管T6可以导通和截止。示例性地,第六晶体管的控制极T63可以与发光控制信号线耦接,发光控制信号线输出的发光控制信号Sc2可以写入第六晶体管的控制极,响应于该发光控制信号Sc2,第六晶体管T6可以导通和截止。在一些实施例中,一发光控制信号线可以与第五晶体管的控制极T51耦接,还可以与第六晶体管的控制极T61耦接,因此,第五晶体管T5和第六晶体管T6可以是同时导通或同时截止的。在另一些实施例中,第五晶体管的控制极T53可以与一发光控制信号线耦接,第六晶体管的控制极T63可以与另一发光控制信号线耦接,这样,通过两根发光控制信号线,可以对第五晶体管T5和第六晶体管T6分别进行控制。The sixth transistor T6 includes a first electrode T61, a second electrode T62 and a control electrode T63. In the sixth transistor T6 , the first electrode T61 is coupled to the second electrode Td2 of the driving transistor, and the second electrode T62 is coupled to the
示例性地,基于像素电路10的上述结构,像素电路10的工作流程可以包括:对驱动晶体管Td进行初始化的阶段、对发光器件100进行初始化的阶段、数据写入阶段、以及发光阶段。Exemplarily, based on the above structure of the
具体地,在对驱动晶体管Td进行初始化的阶段,第一晶体管T1可以导通,通过第一晶体管T1,第一初始化信号Vinit1写入驱动晶体管的控制极Td3,实现对驱动晶体管Td的初始化。示例性地,在对驱动晶体管Td进行初始化的阶段,第二晶体管T2、第三晶体管T3、第四晶体管T4、第五晶体管T5、以及第六晶体管T6可以截止。Specifically, in the stage of initializing the driving transistor Td, the first transistor T1 can be turned on, and the first initialization signal Vinit1 is written into the control electrode Td3 of the driving transistor through the first transistor T1 to realize the initialization of the driving transistor Td. Exemplarily, in the stage of initializing the driving transistor Td, the second transistor T2, the third transistor T3, the fourth transistor T4, the fifth transistor T5, and the sixth transistor T6 may be turned off.
在对发光器件100进行初始化的阶段,第二晶体管T2可以导通,通过第二晶体管T2,第二初始化信号Vinit2写入发光器件100,例如写入发光器件100的第一电极,实现对发光器件100的初始化。In the stage of initializing the light-emitting
在数据写入阶段,第一晶体管T1、第五晶体管T5截止。驱动晶体管Td、第三晶体管T3、以及第四晶体管T4导通。可以通过第三晶体管T3、驱动晶体管Td、以及第四晶体管T4对电容器C充电。由于驱动晶体管Td自身特性,当节点N1的电压变为Vdata+Vth时,驱动晶体管Td截止,充电过程结束,电容器C的第一极板S1写入的电信号的电压为Vdata+Vth,其中,Vdata表示数据信号Da的电压,Vth表示驱动晶体管Td的阈值电压。电容器C的第二极板S2由于与第一电源线EL2耦接而写入第一电源电压信号ELVDD。In the data writing stage, the first transistor T1 and the fifth transistor T5 are turned off. The driving transistor Td, the third transistor T3, and the fourth transistor T4 are turned on. The capacitor C may be charged through the third transistor T3, the driving transistor Td, and the fourth transistor T4. Due to the characteristics of the driving transistor Td, when the voltage of the node N1 becomes Vdata+Vth, the driving transistor Td is turned off, the charging process ends, and the voltage of the electrical signal written in the first plate S1 of the capacitor C is Vdata+Vth, wherein, Vdata represents the voltage of the data signal Da, and Vth represents the threshold voltage of the driving transistor Td. The second plate S2 of the capacitor C is coupled with the first power line EL2 to write the first power voltage signal ELVDD.
在一些可能的实现方式中,数据写入阶段与对发光器件100进行初始化的阶段可以同时进行。即,可以将第三晶体管T3、第四晶体管T4、驱动晶体管Td、以及第二晶体管T2导通,将第五晶体管T5、第六晶体管T6、以及第一晶体管T1截止,可以实现对电容器C充电的同时对发光器件100进行初始化。In some possible implementations, the data writing phase and the phase of initializing the
在发光阶段,第五晶体管T5、第六晶体管T6导通。第一晶体管T1、第二晶体管T2、第三晶体管T3、以及第四晶体管T4截止。驱动晶体管Td响应于控制极Td3上的电信号的电压而导通,该电信号可以为数据写入阶段写入电容器C的第一极板S1的电信号,从而可以生成流经驱动晶体管的第一极Td1和第二极Td2的电流,该电流可以输出至发光器件100,驱动发光器件100发光。In the light-emitting stage, the fifth transistor T5 and the sixth transistor T6 are turned on. The first transistor T1, the second transistor T2, the third transistor T3, and the fourth transistor T4 are turned off. The driving transistor Td is turned on in response to the voltage of the electrical signal on the control electrode Td3, which can be the electrical signal written to the first plate S1 of the capacitor C in the data writing phase, so that the first electrode flowing through the driving transistor can be generated. The current of the first pole Td1 and the second pole Td2 can be output to the
图6为本公开一些实施例提供的显示面板中包含一个像素电路的部分的局部放大图。需要说明的是,为了图示更加清晰,图6中没有示出发光器件100的全部结构,仅示出了发光器件100的第一电极,用以示出发光器件100的位置和连接关系。参见图6,显示面板可以具有多层结构。示例性地,显示面板可以包括设置在衬底S上的有源层300、第一图案层400、第二图案层500、以及第三图案层600。FIG. 6 is a partial enlarged view of a portion of a display panel including a pixel circuit according to some embodiments of the present disclosure. It should be noted that, in order to make the illustration clearer, FIG. 6 does not show the entire structure of the
其中,有源层300和第一图案层400相互交叠,可以形成晶体管,例如驱动晶体管Td、第一晶体管T1以及第二晶体管T2,又例如第三晶体管T3、第四晶体管T4、第五晶体管T5、第六晶体管T6中的一个或多个。通过有源层300和第一图案层400相互交叠形成的晶体管可以称为薄膜晶体管。The
有源层300的材料例如为半导体材料。可以通过掺杂工艺将有源层300的一部分图案导体化,例如,可以将在垂直于衬底S的方向(例如平行于z轴方向)上,源极层300中没有正对第一图案层400的部分导体化。导体化的部分可以作为晶体管的源极区和漏极区。其中,源极区可以是晶体管的第一极,漏极区可以是晶体管的第二极;或者,源极区可以是晶体管的第二极,漏极区可以是晶体管的第一极。第一图案层400的材料可以是导电材料,例如为金属或合金。The material of the
为了对有源层和第一图案层进行更详细地说明,图7为有源层的俯视图,图8为第一图案层的俯视图,图9为层叠设置的有源层和第一图案层的俯视图。参见图8和图9,在垂直于衬底S的方向(例如平行于z轴方向)上,第一导电层400中与有源层300正对的部分可以包括一个或多个晶体管的控制极。例如,第一导电层400可以包括第一晶体管的控制极T13(例如包括子晶体管T1a的控制极T1a3和子晶体管T1b的控制极T1b3)、第二晶体管的控制极T23、驱动晶体管的控制极Td3,还可以包括第三晶体管的控制极T33、第四晶体管的控制极T43、第五晶体管的控制极T53、第六晶体管的控制极T63中的一个或多个。In order to describe the active layer and the first pattern layer in more detail, FIG. 7 is a top view of the active layer, FIG. 8 is a top view of the first pattern layer, and FIG. 9 is a stacked view of the active layer and the first pattern layer. Top view. Referring to FIGS. 8 and 9 , in a direction perpendicular to the substrate S (eg, parallel to the z-axis direction), the portion of the first
参见图7和图9,在垂直于衬底S的方向(例如平行于z轴方向)上,有源层300中与第一导电层400正对的部分可以包括一个或多个晶体管的沟道。具体地,在垂直于衬底S的方向(例如平行于z轴方向)上,有源层300中与晶体管的控制极正对的部分,也可以说有源层300中被一晶体管的控制极覆盖的部分可以作为该晶体管的沟道。基于上述,有源层300可以包括第一晶体管的沟道T1’(例如包括子晶体管T1a的沟道T1a’和子晶体管T1b的沟道T1b’)、第二晶体管的沟道T2’、驱动晶体管的沟道Td’,还可以包括第三晶体管的沟道T3’、第四晶体管的沟道T4’、第五晶体管的沟道T5’、第六晶体管的沟道T6’中的一个或多个。Referring to FIGS. 7 and 9 , in a direction perpendicular to the substrate S (eg, parallel to the z-axis direction), a portion of the
为了更清楚地示出晶体管的结构,图10为图9中区域B的局部放大图,示出了一子晶体管(例如子晶体管T1a)的结构。可以理解地,其他晶体管的结构可以与图10所示的子晶体管的结构类似,因此对于其他晶体管的结构在此便不再一一赘述。参见图10,子晶体管T1a可以包括第一极T1a1和第二极T1a2,以及位于第一极T1a1和第二极T1a2之间的沟道T1a’。沟道T1a’的长度l1可以为第一极T1a1和第二极T1a2之间的距离,沟道T1a’的长度l1还可以与位于第一图案层400中的该晶体管的控制极T1a3的宽度h1相等。沟道的宽度w1可以为有源层300中与控制极T1a3正对部分的宽度。沟道的宽度w1还可以与有源层300中有源图案的宽度d1相等。In order to show the structure of the transistor more clearly, FIG. 10 is a partial enlarged view of the region B in FIG. 9 , showing the structure of a sub-transistor (eg, the sub-transistor T1a). It can be understood that the structures of other transistors may be similar to the structures of the sub-transistors shown in FIG. 10 , so the structures of other transistors will not be repeated here. Referring to FIG. 10, the sub-transistor T1a may include a first electrode T1a1 and a second electrode T1a2, and a channel T1a' between the first electrode T1a1 and the second electrode T1a2. The length l1 of the channel T1a' may be the distance between the first electrode T1a1 and the second electrode T1a2, and the length l1 of the channel T1a' may also be the same as the width h1 of the control electrode T1a3 of the transistor located in the
继续参见图9,如上文所述,在本公开的一些实施例提供的像素电路中,在第一晶体管T1中,至少一个子晶体管的沟道的宽长比小于第二晶体管T2的沟道的宽长比。即,至少一个子晶体管的沟道的宽长比较小,进而可以减小子晶体管在截止状态下的漏电流。为了减小子晶体管的沟道的宽长比,可以增大子晶体管的沟道的长度l1,也可以减小子晶体管的沟道的宽度w1。在一些实施例中,每个子晶体管的沟道的宽度w1与第二晶体管T2的沟道的宽度w2相等。即,通过将每个子晶体管的沟道的宽度w1设置为与第二晶体管T2的沟道的宽度w2相等,并且将至少一个(例如,一个;又如,多个)子晶体管的沟道的长度l1设置为大于第二晶体管T2的沟道的长度l2,以实现至少一个(例如,一个;又如,每个)子晶体管的沟道的宽长比小于第二晶体管T2的沟道的宽长比。由于晶体管的尺寸较小,相比于减小晶体管的沟道的宽度,增加晶体管的沟道的长度在工艺上更易于实现,例如,相比于减小有源层300中有源图案的宽度d1,增大子晶体管的控制极的宽度h1在工艺上更容易实现,有利于提高产品的良率。Continuing to refer to FIG. 9 , as described above, in the pixel circuit provided by some embodiments of the present disclosure, in the first transistor T1 , the width to length ratio of the channel of at least one sub-transistor is smaller than the width of the channel of the second transistor T2 Aspect ratio. That is, the width and length of the channel of at least one of the sub-transistors are relatively small, so that the leakage current of the sub-transistor in the off state can be reduced. In order to reduce the aspect ratio of the channel of the sub-transistor, the length l1 of the channel of the sub-transistor may be increased, or the width w1 of the channel of the sub-transistor may be decreased. In some embodiments, the width w1 of the channel of each sub-transistor is equal to the width w2 of the channel of the second transistor T2. That is, by setting the width w1 of the channel of each sub-transistor equal to the width w2 of the channel of the second transistor T2, and changing the length of the channel of at least one (eg, one; another example, a plurality) of the sub-transistors l1 is set to be greater than the length l2 of the channel of the second transistor T2, so as to realize that the width to length ratio of the channel of at least one (eg, one; another example, each) sub-transistor is smaller than the width to length of the channel of the second transistor T2 Compare. Due to the smaller size of the transistor, it is easier to process the length of the channel of the transistor than to reduce the width of the channel of the transistor, for example, compared to the reduction of the width of the active pattern in the
在一些实施例中,在第一晶体管T1中,至少一个(例如,一个;又如,每个)子晶体管的沟道的长度l1比第二晶体管T2的沟道的长度l2大0.8~1.2μm,从而实现至少一个(例如,一个;又如,每个)子晶体管的沟道的宽长比小于第二晶体管T2的沟道的宽长比的目的。例如,至少一个(例如,一个;又如,每个)子晶体管的沟道的长度l1比第二晶体管T2的沟道的长度l2大0.8μm、0.9μm、1.0μm、1.1μm、1,2μm。在一些可能的实现方式中,如上文所述,每个子晶体管的沟道的宽度w1与第二晶体管的沟道的宽度w2相等,此时,每个子晶体管的沟道的长度l1均可以比第二晶体管T2的长度l2大0.8~1.2μm。In some embodiments, in the first transistor T1, the length l1 of the channel of at least one (eg, one; another example, each) sub-transistor is greater than the length l2 of the channel of the second transistor T2 by 0.8˜1.2 μm , so as to achieve the purpose that the width-to-length ratio of the channel of at least one (eg, one; another example, each) sub-transistor is smaller than the width-to-length ratio of the channel of the second transistor T2 . For example, the length l1 of the channel of at least one (eg, one; another example, each) sub-transistor is 0.8 μm, 0.9 μm, 1.0 μm, 1.1 μm, 1,2 μm greater than the length l2 of the channel of the second transistor T2 . In some possible implementations, as described above, the width w1 of the channel of each sub-transistor is equal to the width w2 of the channel of the second transistor, and in this case, the length l1 of the channel of each sub-transistor may be greater than The length l2 of the second transistor T2 is larger by 0.8˜1.2 μm.
在一些实施例中,综合考量工艺的难易程度以及产品的效果,在第一晶体管T1中,至少一个(例如,一个;又如,每个)子晶体管的沟道的宽度w1为2.0~3.0μm,长度l1为2.7~4.0μm。示例性地,至少一个(例如,一个;又如,每个)子晶体管的沟道的宽度w1为2.3±0.2μm,长度l1为3.5±0.2μm。例如,至少一个(例如,一个;又如,每个)子晶体管的沟道的宽度w1为2.0μm、2.1μm、2.2μm、2.3μm、2.4μm、2.5μm、2.6μm、2.7μm、2.8μm、2.9μm、或3.0μm;至少一个(例如,一个;又如,每个)子晶体管的沟道的长度l1为2.7μm、2.8μm、2.9μm、3.0μm、3.1μm、3.2μm、3.3μm、3.4μm、3.5μm、3.6μm、3.7μm、3.8μm、3.9μm、或4.0μm。In some embodiments, considering the difficulty of the process and the effect of the product, in the first transistor T1, the width w1 of the channel of at least one (eg, one; another example, each) sub-transistor is 2.0˜3.0 μm, and the length l1 is 2.7 to 4.0 μm. Illustratively, the width w1 of the channel of at least one (eg, one; another example, each) sub-transistor is 2.3±0.2 μm and the length l1 is 3.5±0.2 μm. For example, the width w1 of the channel of at least one (eg, one; another example, each) sub-transistor is 2.0 μm, 2.1 μm, 2.2 μm, 2.3 μm, 2.4 μm, 2.5 μm, 2.6 μm, 2.7 μm, 2.8 μm , 2.9 μm, or 3.0 μm; the length l1 of the channel of at least one (eg, one; another example, each) sub-transistor is 2.7 μm, 2.8 μm, 2.9 μm, 3.0 μm, 3.1 μm, 3.2 μm, 3.3 μm , 3.4 μm, 3.5 μm, 3.6 μm, 3.7 μm, 3.8 μm, 3.9 μm, or 4.0 μm.
在一些实施例中,驱动晶体管Td的沟道的宽度wd比第二晶体管T2的沟道的宽度w2大。这样,可以提高驱动晶体管Td的沟道的尺寸均一性,提高驱动晶体管Td的性能。示例性地,驱动晶体管Td的沟道的宽度w2为3.0±0.2μm,例如为2.8μm、2.9μm、3.0μm、3.1μm、或3.2μm。In some embodiments, the width wd of the channel of the driving transistor Td is larger than the width w2 of the channel of the second transistor T2. In this way, the dimensional uniformity of the channel of the driving transistor Td can be improved, and the performance of the driving transistor Td can be improved. Exemplarily, the width w2 of the channel of the driving transistor Td is 3.0±0.2 μm, eg, 2.8 μm, 2.9 μm, 3.0 μm, 3.1 μm, or 3.2 μm.
基于上述,在一些实施例中,第一晶体管中至少一个(例如,一个;又如,每个)子晶体管的沟道的宽度为2.3±0.2μm,长度为3.5±0.2μm。第二晶体管、第三晶体管、第四晶体管、第五晶体管和第六晶体管中的至少一个(例如,一个;又如,每个)的沟道的宽度为2.3±0.2μm,长度为2.5±0.2μm。驱动晶体管的沟道的宽度为3.0±0.2μm,长度为20.7±0.2μm。这样,可以较好地改善显示面板显示画面的残像问题以及亮点问题。Based on the above, in some embodiments, the channel of at least one (eg, one; another example, each) sub-transistor in the first transistor has a width of 2.3±0.2 μm and a length of 3.5±0.2 μm. The channel of at least one (eg, one; another example, each) of the second, third, fourth, fifth, and sixth transistors has a width of 2.3±0.2 μm and a length of 2.5±0.2 μm. The channel of the drive transistor has a width of 3.0±0.2 μm and a length of 20.7±0.2 μm. In this way, the afterimage problem and the bright spot problem of the display image of the display panel can be better improved.
如上文所述,显示面板包括多个像素电路,在各个像素电路中,像素驱动电路可以呈阵列分布。可以用像素驱动电路的位置代表像素电路的位置,基于此,也可以说像素电路呈阵列分布,如图2所示的那样。图11示出了图2中位于两行一列(例如第N-1行和第N行,第M列)的两个像素电路和信号线的结构。参见图11,在一些实施例中显示面板可以包括位于第N-1(N为大于1的整数)行的第一像素电路10a和位于第N(N为大于1的整数)行的第二像素电路10b。其中,第一像素电路10a和第二像素电路10b可以是上述任一实施例提供的像素电路。显示面板还可以包括位于第N-1行的(也可以说第N-1条)复位控制信号线RN-1,复位信号线RN-1的功能以及其与像素电路的连接关系可以如上文所述,在此不再赘述。复位信号线RN-1可以与第一像素电路10a耦接,还可以与第二像素电路10b耦接。具体地,参见图12,位于第N行的第二像素电路10b中第一晶体管的控制极T13-10b和位于第N-1行的第一像素电路10a中的第二晶体管的控制极T23-10a均与第N-1行的复位控制信号线RN-1耦接。这样,通过一根复位控制信号线RN-1即可控制第一像素电路10a中的第二晶体管和第二像素电路10b中的第一晶体管,可以使得显示面板的结构更紧凑,可以减小显示面板的尺寸。As described above, the display panel includes a plurality of pixel circuits, and in each pixel circuit, the pixel driving circuits may be distributed in an array. The position of the pixel circuit can be used to represent the position of the pixel circuit. Based on this, it can also be said that the pixel circuits are distributed in an array, as shown in FIG. 2 . FIG. 11 shows the structure of two pixel circuits and signal lines located in two rows and one column (eg, the N-1th row and the Nth row, and the Mth column) in FIG. 2 . Referring to FIG. 11, in some embodiments, the display panel may include a
在一些实施例中,在第二像素电路10b的第一晶体管中,各个子晶体管的控制极相互耦接并形成一体图案U。示例性地,第一晶体管包括两个相互耦接的子晶体管,两个子晶体管分别包括控制极T1a3-10b和控制极T1b3-10b,控制极T1a3-10b和控制极T1b3-10b相互耦接,并形成一体图案U。并且,一体图案U与复位控制信号线RN-1耦接。In some embodiments, in the first transistor of the
进一步地,复位控制信号线RN-1、一体图案U、以及第一像素电路10a中第二晶体管的控制极T23-10a位于同一图案层中,例如,位于第一图案层400中。并且,一体图案U的宽度k大于第二晶体管的控制极T23-10a的宽度l2,并且大于复位控制信号线RN-1的宽度f。这样,第二子像素10b中第一晶体管中至少一个(例如,一个;又如,每个)子晶体管的沟道的长度可以大于第一子像素10a中第二晶体管的沟道的长度。进一步地,可以实现在一像素电路(例如每个像素电路)中,第一晶体管中至少一个(例如,一个;又如,每个)子晶体管的沟道的长度大于第二晶体管的沟道的长度,进而可以实现第一晶体管中至少一个(例如,一个;又如,每个)子晶体管的沟道的宽长比小于第二晶体管的沟道的宽长比的目的。并且,在实现子晶体管的沟道的长度大于第二晶体管的沟道的长度的基础上,复位控制信号线RN-1的宽度f也可以较窄,可以使得像素电路的结构更加紧凑。Further, the reset control signal line R N-1 , the integrated pattern U, and the control electrode T23 - 10 a of the second transistor in the
继续参见图11,在一些实施例中,显示面板还包括第一发光控制信号线EN-1和第二发光控制信号线EN。第一发光控制信号线EN-1可以位于第N-1行(即第一发光控制信号线EN-1为第N-1条发光控制信号线),并与第N-1行的第一像素电路10a耦接。第二发光控制信号线EN可以位于第N行(即第二发光控制信号线EN为第N条发光控制信号线),并与第二像素电路10b耦接。一个像素电路与发光控制信号线的连接关系可以参照上文的说明,在此不再赘述。基于上文所述的一个像素电路与发光控制信号线的连接关系,参见图12,第二发光控制信号线EN可以与第二像素电路10b中第五晶体管T5的控制极和第六晶体管T6的控制极耦接。类似地,第一发光控制信号线可以与第一像素电路10a中第五晶体管的控制极和第六晶体管的控制极耦接。Continuing to refer to FIG. 11 , in some embodiments, the display panel further includes a first light emission control signal line EN -1 and a second light emission control signal line E N . The first light-emitting control signal line E N-1 may be located in the N-1th row (that is, the first light-emitting control signal line E N-1 is the N-1th light-emitting control signal line), and is connected with the N-1th line of the light-emitting control signal line. A
继续参见图11,显示面板还可以包括第一扫描信号线GN-1和第二扫描信号线GN。第一扫描信号线GN-1可以位于第N-1行(即第一扫描信号线GN-1为第N-1条扫描信号线),并与第N-1行的第一像素电路10a耦接。第二扫描信号线GN可以位于第N行(即第二扫描信号线GN为第N条扫描信号线),并与第二像素电路10b耦接。一个像素电路与扫描信号线的连接关系可以参照上文的说明,在此不再赘述。基于上文所述的一个像素电路与扫描信号线的连接关系,参见图12,第二扫描信号线GN可以与第二像素电路10b中第三晶体管T3的控制极和第四晶体管T4的控制极耦接。类似地,第一扫描信号线可以与第一像素电路10a中第三晶体管的控制极和第四晶体管的控制极耦接。Continuing to refer to FIG. 11 , the display panel may further include a first scan signal line GN -1 and a second scan signal line GN . The first scan signal line G N-1 may be located in the N-1th row (that is, the first scan signal line G N-1 is the N-1th scan signal line), and is connected to the first pixel circuit in the N-1th row. 10a is coupled. The second scan signal line GN may be located in the Nth row (ie, the second scan signal line GN is the Nth scan signal line), and is coupled to the
在一些实施例中,复位信号线R(例如包括复位信号线RN-1)、扫描信号线G(例如包括第一扫描信号线GN-1和第二扫描信号线GN)和发光控制信号线E(例如包括第一发光控制信号线EN-1和第二发光控制信号线EN)以及一体图案U可以位于同一图案层中,例如位于第一图案层400中。In some embodiments, the reset signal line R (eg, including the reset signal line R N-1 ), the scan signal line G (eg, including the first scan signal line GN -1 and the second scan signal line GN ), and the light emission control The signal line E (for example, including the first light emission control signal line E N-1 and the second light emission control signal line E N ) and the integrated pattern U may be located in the same pattern layer, for example, in the
在一些实施例中,参见图8,第一图案层400还可以包括电容器的第一极板S1。即,第一极板S1与复位信号线R、扫描信号线G和发光控制信号线E、以及一体图案U可以位于同一图案层中。In some embodiments, referring to FIG. 8 , the
继续参见图12,在一些实施例中,第二图案层500还可以包括初始化信号线Vi。初始化信号线Vi的功能以及与像素电路的连接关系可以参照上文的说明,在此不再赘述。在一些可能的实现方式中,位于第N-1行的第一像素电路10a中第二晶体管的第二极和位于第N行的第二像素电路10b中第一晶体管的第二极可以与同一初始化信号线耦接,如图12所示。在另一些可能的实现方式中,参见图13,在显示面板中,位于第N-1行的第一像素电路10a中第二晶体管的第二极T22-10a可以与一条初始化信号线耦接,位于第N行的第二像素电路10b中的第一晶体管的第二极T12-10b可以与另一条初始化信号线耦接。Continuing to refer to FIG. 12 , in some embodiments, the
继续参见图12,在一些实施例中,第二图案层500还可以包括电容器C的第二电极。Continuing to refer to FIG. 12 , in some embodiments, the
在一些实施例中,第三图案层600还可以包括数据线D和第一电源线EL1。数据线D和第一电源线EL1的功能以及与像素电路的连接关系可以参照上文的说明,在此不再赘述。第三图案层600还可以包括发光器件100的第一电极。In some embodiments, the
最后应说明的是:以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, but not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that it can still be The technical solutions described in the foregoing embodiments are modified, or some technical features thereof are equivalently replaced; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.
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| CN114944135A (en) * | 2022-06-13 | 2022-08-26 | 厦门天马显示科技有限公司 | A display panel and display device |
| CN114944135B (en) * | 2022-06-13 | 2025-01-24 | 厦门天马显示科技有限公司 | Display panel and display device |
| CN114974160A (en) * | 2022-06-16 | 2022-08-30 | 长沙惠科光电有限公司 | Scanning driving circuit, display panel and display device |
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