CN113834573A - Mass production testing device for infrared thermopile sensor - Google Patents
Mass production testing device for infrared thermopile sensor Download PDFInfo
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- CN113834573A CN113834573A CN202111175721.2A CN202111175721A CN113834573A CN 113834573 A CN113834573 A CN 113834573A CN 202111175721 A CN202111175721 A CN 202111175721A CN 113834573 A CN113834573 A CN 113834573A
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- 238000012360 testing method Methods 0.000 title claims abstract description 131
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 230000005855 radiation Effects 0.000 claims abstract description 43
- 239000000969 carrier Substances 0.000 claims abstract description 35
- 230000035945 sensitivity Effects 0.000 claims abstract description 22
- 238000005259 measurement Methods 0.000 claims description 23
- 230000005540 biological transmission Effects 0.000 claims description 17
- 230000003321 amplification Effects 0.000 claims description 13
- 238000004891 communication Methods 0.000 claims description 13
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 13
- 238000004364 calculation method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
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- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000013100 final test Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
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Abstract
The invention provides a mass production testing device of an infrared thermopile sensor, which comprises: a test board; the test carriers are arranged on the test board and used for detachably inserting the infrared thermopile sensors; the conveying device is used for carrying the test board; the black body is arranged above the conveying device, a radiation source is arranged in the black body, and the radiation source is used for generating set temperature; when the conveyer drives the test board, the test carriers in each row are aligned with the radiation source in sequence; the voltage measuring circuit is electrically connected with the test carriers and is used for measuring the output voltage of each infrared thermopile sensor in a row of test carriers aligned with the radiation source; and the upper computer calculates the sensitivity index of the infrared thermopile sensor based on the output voltage of the infrared thermopile sensor measured by the voltage measuring circuit. Compared with the prior art, the invention can carry out batch and high-reliability sensitivity test on the infrared thermopile sensor in the FT test stage.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of testing of micro-electro-mechanical system devices, in particular to a mass production testing device of an infrared thermopile sensor.
[ background of the invention ]
The MEMS device refers to a high-tech electromechanical device having a Micro-Electro-Mechanical System (MEMS) and a size of only a few millimeters or less, and the processing technology thereof combines lithography, etching, thin film, LIGA, silicon micromachining, non-silicon micromachining, and precision machining technologies. At present, the application field of the MEMS device is quite wide, and common products such as MEMS accelerometer, MEMS microphone, MEMS optical sensor, MEMS pressure sensor, MEMS gyroscope, MEMS humidity sensor, MEMS gas sensor, MEMS infrared thermopile sensor. For an infrared thermopile (IR) sensor, in the prior art, only the resistance value of the IR thermopile is generally measured in the mass production shipment stage, but the high-precision real-time batch measurement of the sensitivity characteristic cannot be performed, the resistance value can only reflect the electrical connection characteristic of the product, the good consistency of the output characteristics of all IR products in the ft (final test) test stage cannot be completely ensured, the yield cannot be guaranteed at the customer product terminal, and the reliable application of the terminal product is limited.
Therefore, a new technical solution is needed to solve the above problems.
[ summary of the invention ]
An object of the present invention is to provide a mass production test apparatus for infrared thermopile sensors, which can perform a sensitivity test with high reliability on infrared thermopile sensors in a batch manner in an FT test stage.
According to an aspect of the present invention, there is provided a mass production test apparatus for infrared thermopile sensors, comprising: a test board; the test carriers are arranged on the test board and used for detachably inserting infrared thermopile sensors, and when the infrared thermopile sensors are inserted in the test carriers, the infrared thermopile sensors are electrically connected with the test board; the conveying device is used for carrying the test board and conveying the test board along a conveying direction; the black body is arranged above the conveying device, a radiation source is arranged in the black body, and the radiation source is used for generating a set temperature Tset; when the conveying device drives the test board to move along the conveying direction and pass below the black body, aligning each row of test carriers on the test board to the radiation source in the black body in sequence; the voltage measuring circuit is electrically connected with the plurality of test carriers and is used for measuring the output voltage of each infrared thermopile sensor in a row of test carriers aligned with the radiation source; and the upper computer is in communication connection with the voltage measuring circuit and calculates the sensitivity index of the infrared thermopile sensor based on the output voltage of the infrared thermopile sensor measured by the voltage measuring circuit.
Compared with the prior art, the mass production testing device for the infrared thermopile sensors, provided by the invention, can be used for carrying out batch and high-reliability sensitivity testing on the infrared thermopile sensors in the FT testing stage, so that the shipment yield is better ensured, and the application reliability of terminal products is guaranteed.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise. Wherein:
FIG. 1 is a schematic diagram of an apparatus for mass production testing of infrared thermopile sensors in one embodiment of the present invention;
FIG. 2 is a schematic diagram of the PCB test board shown in FIG. 1 according to one embodiment of the present invention;
FIG. 3 is a schematic circuit diagram of an apparatus for mass production testing of infrared thermopile sensors in one embodiment of the present invention.
[ detailed description ] embodiments
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Unless otherwise specified, the terms connected, and connected as used herein mean electrically connected, directly or indirectly.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," "coupled," and the like are to be construed broadly; for example, the connection can be fixed, detachable or integrated; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other suitable relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Aiming at the problems in the prior art, the invention provides a mass production testing device of an infrared thermopile sensor. Fig. 1 is a schematic structural diagram of a mass production testing apparatus for infrared thermopile sensors according to an embodiment of the present invention; please refer to fig. 2, which is a schematic structural diagram of the PCB test board shown in fig. 1 according to an embodiment of the present invention; fig. 3 is a schematic circuit diagram of a mass production testing apparatus for infrared thermopile sensors according to an embodiment of the present invention. The mass production test apparatus for the infrared thermopile sensor shown in fig. 1-3 includes a transfer apparatus 1, a PCB (Printed Circuit Board) test Board 2, a black body 3, a voltage measuring Circuit (not identified), and an upper computer 5.
The conveying device 1 is used for carrying the PCB test board 2 and conveying the PCB test board 2 along the conveying direction. In the embodiment shown in fig. 1, the conveyor 1 is a conveyor belt, the motor of which is controlled to rotate by precise steps, driving precise horizontal displacements of the PCB test board 2 on the surface of the conveyor 1.
A plurality of test carriers 21 are disposed on the PCB test board 2, each of the test carriers 21 is detachably inserted with an infrared thermopile sensor (i.e. IR sensor) 211 (see fig. 1 and 2), and when the infrared thermopile sensor 211 is inserted in the test carrier 21, the infrared thermopile sensor 211 and the PCB test board 2 are electrically connected.
The black body 3 is fixedly arranged above said conveyor 1, and a radiation source 31 is arranged centrally within the black body 3, which radiation source 31 is arranged to generate a set temperature Tset, for example 50 c, when implemented. When the conveyor 1 drives the PC B test board 2 to move horizontally (or move along the conveying direction) and pass under the black body 3, the rows of test carriers 21 on the PCB test board 2 can be aligned (or aligned) with the center of the radiation source 31 in the black body 3 in sequence, and the radiation source 31 in the black body 3 needs to completely cover the FOV (field angle) of each infrared thermopile sensor 211 in the row of test carriers 21 aligned with the radiation source 31, thereby ensuring the accuracy of the test system. Preferably, the vertical distance between the black body 3 and the window surface of each infrared thermopile sensor 211 in the row of test carriers 21 aligned with the radiation source 31 on the PCB test board 2 is 2-5 cm when the black body is fixed, so as to fully cover the FOV of the infrared thermopile sensor 211.
A voltage measuring circuit (not identified) is electrically connected to the plurality of test carriers 21 disposed on the PCB test board 2, and the voltage measuring circuit is configured to measure the output voltage of each infrared thermopile sensor 211 in a row of test carriers 21 aligned with the radiation source 31.
In the embodiment shown in fig. 2 and 3, the voltage measuring circuit includes a gate amplifying unit 22, a voltage signal output interface 23 and a voltage measurement transmitting unit 4, wherein the gate amplifying unit 22 and the voltage signal output interface 23 are disposed on the PCB test board 2, and the voltage measurement transmitting unit 4 is disposed outside the PCB test board 2.
The gating amplification unit 22 is electrically connected to the plurality of test vehicles 21, and the gating amplification unit 22 is configured to perform one-out-of-multiple switching selection (or one-by-one selection) on the output signals of the infrared thermopile sensors 211 in a row of test vehicles 21 aligned with the radiation source 31, and amplify the output signals of the selected infrared thermopile sensors. In the embodiment shown in fig. 3, the gate amplifying unit 22 includes a one-out-of-multiple gate switch 221 and an amplifier circuit unit 222, wherein the one-out-of-multiple gate switch 221 is electrically connected between the test carriers 21 and the input terminal of the amplifier circuit unit 222; the one-out-of-multiple gate switch 221 is used for performing one-out-of-multiple switch selection (or selecting one by one) on the output signal of each infrared thermopile sensor in a row of test vehicles aligned with the radiation source 31; the output end of the amplifier circuit unit 222 is electrically connected to the voltage signal output interface 23, and the amplifier circuit unit 222 amplifies the output signal of the infrared thermopile sensor 211 selected by the one-out-of-multiple gate switch 221 and outputs the amplified output signal of the infrared thermopile sensor 211.
The input end of the voltage measurement transmission unit 4 is electrically connected with the output end of the gating amplification unit 22 (i.e. the output end of the amplifier circuit unit 222) through the voltage signal output interface 23, and the output end thereof is in communication connection with the upper computer 5. The voltage measurement transmission unit 4 obtains the output voltage of the infrared thermopile sensor based on the amplified output signal of the infrared thermopile sensor output by the gate amplification unit 22. In one embodiment, the voltage measurement transmission unit 4 is a Multimeter (i.e., a Multimeter) having functions of voltage measurement and data communication.
Host computer 5 and voltage measurement transmission unit 4's output communication connection, host computer 5 is used for the storage voltage measurement transmission unit 4 measures in real time the PCB surveys the output voltage of each infrared thermopile sensor 211 on the board 2 (its difference in temperature change that reflects infrared thermopile sensor 211) and the sensitivity index of corresponding infrared thermopile sensor 211 of automatic calculation:
(ii) a sensitivity of V/Gain/Δ T, wherein Δ T is Tset-Tamb,
gain is the amplifier Gain of the amplifier circuit unit 222 in the gate amplification unit 22, Tset is the set radiation temperature of the radiation source 31 in the black body 3; tamb is the ambient temperature. Tamb in the embodiment is the temperature of an ambient temperature standing area of 25 ℃, and the set radiation temperature of Tset in the black body 3 is 50 ℃; the reference range of good product of the sensitivity index is about 50-70 muV/DEG C. When the Sensitivity index of the infrared thermopile sensor 211 automatically calculated by the upper computer 5 is not within the good product reference range, the infrared thermopile sensor can be picked out in the FT test and further processed, so that the quality of the product is better guaranteed.
In the implementation shown in fig. 1 and fig. 3, the upper computer 5 is in communication connection with the transmission device 1, and in implementation, the upper computer 5 drives the transmission device 1 to first transport the PCB test board 2 to stop in the ambient Temperature standing area for a predetermined time, for example, 5min, so as to enable an NTC (Negative Temperature Coefficient) index of the infrared thermopile sensor 211 to approach an ambient Temperature Tamb, and then transport the PCB test board 2 toward the black body 3, which can improve reliability of a subsequent sensitivity test result.
In the embodiment shown in fig. 3, the gating and amplifying unit 22 further includes a communication interface 223 (in an embodiment, the communication interface 223 is an I2C interface), the communication interface 223 is communicatively connected to the upper computer 5, and the upper computer 5 can control the one-out-of-multiple gating switch 221 to automatically switch the measurement between the output signals of the IR sensors 211 in the current row (or each infrared thermopile sensor 211 in a row of test vehicles 21 currently aligned with the radiation source 31) through the communication interface 223, so that the device cost is low and the test efficiency is high.
When a row of test carriers 21 of the PCB test board 2 is aligned with the center of the radiation source 31 in the black body 3, the upper computer 5 immediately controls the gating amplification unit 22 and the voltage measurement transmission unit 4 to measure the output voltage of each infrared thermopile sensor 211) in the row of test carriers 21 aligned with the radiation source 31; after the measurement is completed (for example, after the upper computer 5 receives the output voltage of each infrared thermopile sensor 211 in a row of test carriers 21 currently aligned with the radiation source 31 and calculates the sensitivity), the upper computer 5 controls the conveying device 1 to move rightward by a predetermined step length, so that each infrared thermopile sensor 211 in the next row of test carriers 21 (or the left row of test carriers 21) on the PCB test board 2 is aligned with the center of the radiation source 31, thereby realizing the mass production batch sensitivity test of each infrared thermopile sensor 211 from right to left on the PCB test board 2, and having a higher degree of automation.
In summary, the mass production testing device for the infrared thermopile sensor provided by the present invention has a high F T testing efficiency, the structure of the whole testing system is simple, the cost is low, the set radiation temperature of the radiation source 31 is controlled by the black body 3, and the design parameters of the longitudinal distance between the window of the infrared thermopile sensor 211 exposed when the infrared thermopile sensor 211 is inserted into the testing carrier 21 and the black body 3 are used to fully cover the field angle of each row of the infrared thermopile sensor 211, so that the concentration of the infrared radiation energy of the black body 3 is ensured during the sensitivity measurement, and the measurement accuracy of the output voltage of the infrared thermopile sensor 211 is higher, that is, the sensitivity result is more accurate. Moreover, compared with the traditional FT test scheme of only testing the thermopile resistor, the test system can enable the Infrared thermopile sensors 211 to absorb Infrared Radiation output response voltage values in batches, and the quality of the device can be accurately judged according to the good product reference interval of the sensitivity index through the upper computer 5, so that the delivery yield of IR (Infrared) products is improved.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example" or "some examples" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by one skilled in the art.
While embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and not to be construed as limiting the present invention, and that changes, modifications and variations may be made therein by those of ordinary skill in the art within the scope of the present invention.
Claims (13)
1. The utility model provides an infrared thermopile sensor's volume production testing arrangement which characterized in that, it includes:
a test board;
the test carriers are arranged on the test board and used for detachably inserting infrared thermopile sensors, and when the infrared thermopile sensors are inserted in the test carriers, the infrared thermopile sensors are electrically connected with the test board;
the conveying device is used for carrying the test board and conveying the test board along a conveying direction;
the black body is arranged above the conveying device, a radiation source is arranged in the black body, and the radiation source is used for generating a set temperature Tset; when the conveying device drives the test board to move along the conveying direction and pass below the black body, aligning each row of test carriers on the test board to the radiation source in the black body in sequence;
the voltage measuring circuit is electrically connected with the plurality of test carriers and is used for measuring the output voltage of each infrared thermopile sensor in a row of test carriers aligned with the radiation source;
and the upper computer is in communication connection with the voltage measuring circuit and calculates the sensitivity index of the infrared thermopile sensor based on the output voltage of the infrared thermopile sensor measured by the voltage measuring circuit.
2. The mass production test apparatus of infrared thermopile sensors according to claim 1,
and the upper computer is in communication connection with the transmission device, and when the transmission device is implemented, the upper computer drives the transmission device to firstly convey the test board to stop for a preset time in the ambient temperature standing area, and then convey the test board to the blackbody direction.
3. The mass production test apparatus of infrared thermopile sensors according to claim 1,
the radiation source in the black body completely covers the field angle of each infrared thermopile sensor in a column of test vehicles aligned with the radiation source.
4. The mass production test apparatus of infrared thermopile sensors according to claim 3,
the vertical distance between the black body and the surface of the window of each infrared thermopile sensor in a row of test carriers aligned to the radiation source on the test board is 2-5 cm.
5. The mass production test apparatus of infrared thermopile sensors according to claim 1,
the voltage measurement circuit includes:
the gating amplification unit is electrically connected with the plurality of test carriers, and is used for selecting one-out-of-multiple switch of output signals of the infrared thermopile sensors in a row of test carriers aligned with the radiation source and amplifying the selected output signals of the infrared thermopile sensors;
and the input end of the voltage measurement transmission unit is electrically connected with the output end of the gating amplification unit, the output end of the voltage measurement transmission unit is in communication connection with the upper computer, and the voltage measurement transmission unit obtains the output voltage of the infrared thermopile sensor based on the amplified output signal of the infrared thermopile sensor output by the gating amplification unit.
6. The mass production test apparatus of infrared thermopile sensors according to claim 5,
the gating amplification unit comprises a one-out-of-multiple gating switch and an amplifier circuit unit,
the multiple-selection-one gating switch is electrically connected between the test carriers and the input end of the amplifier circuit unit, and is used for performing multiple-selection-one switch selection on output signals of the infrared thermopile sensors in a row of test carriers aligned with the radiation source;
the output end of the amplifier circuit unit is electrically connected with the input end of the voltage measurement transmission unit, and the amplifier circuit unit is used for amplifying the output signal of the infrared thermopile sensor selected by the one-of-multiple gating switch and outputting the amplified output signal of the infrared thermopile sensor.
7. The mass production test apparatus of infrared thermopile sensor according to claim 5 or 6,
the voltage measuring circuit also comprises a voltage signal output interface, and the output end of the gating amplification unit is electrically connected with the voltage measuring and transmitting unit through the voltage signal output interface;
the gating amplification unit and the voltage signal output interface are arranged on the test board.
8. The mass production test apparatus of infrared thermopile sensors according to claim 5,
the voltage measurement transmission unit is a multimeter and has the functions of voltage measurement and data communication.
9. The mass production test apparatus of infrared thermopile sensors according to claim 6,
the upper computer calculates the sensitivity index of the infrared thermopile sensor based on the output voltage of the infrared thermopile sensor according to the following formula:
(ii) a sensitivity of V/Gain/Δ T, wherein Δ T is Tset-Tamb,
gain is an amplifier Gain of an amplifier circuit unit in the gated amplifying unit; tset is the set radiation temperature of the radiation source in the black body; tamb is the ambient temperature.
10. The mass production test apparatus of infrared thermopile sensors according to claim 1,
the upper computer is further used for comparing whether the sensitivity index of the infrared thermopile sensor output by calculation is within a good product reference range of the sensitivity index so as to judge whether the corresponding infrared thermopile sensor is qualified.
11. The mass production test apparatus of infrared thermopile sensors of claim 10,
the good product reference range of the sensitivity index is about 50-70 muV/DEG C.
12. The mass production test apparatus of infrared thermopile sensors according to claim 1,
when a row of test carriers of the test board is aligned with a radiation source in the black body, the upper computer controls the gating amplification unit and the voltage measurement transmission unit to measure the output voltage of each infrared thermopile sensor in the row of test carriers aligned with the radiation source;
after the measurement is finished, the upper computer controls the conveying device to move by a preset step length along the conveying direction, so that the next row of test carriers on the test board is aligned to the radiation source.
13. The mass production test apparatus of infrared thermopile sensors of claim 12,
the ambient temperature is 25 ℃;
the set temperature is 50 ℃; and/or
The infrared thermopile sensor is vertically inserted into the test carrier.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115560813A (en) * | 2022-04-28 | 2023-01-03 | 苏州司南传感科技有限公司 | A MEMS flow sensor for non-destructive testing |
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