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CN1260893C - Integrated RF phase-locked loop frequency synthesizer - Google Patents

Integrated RF phase-locked loop frequency synthesizer Download PDF

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CN1260893C
CN1260893C CN 200310103418 CN200310103418A CN1260893C CN 1260893 C CN1260893 C CN 1260893C CN 200310103418 CN200310103418 CN 200310103418 CN 200310103418 A CN200310103418 A CN 200310103418A CN 1260893 C CN1260893 C CN 1260893C
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CN1540869A (en
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石秉学
池保勇
廖青
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Tsinghua University
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Abstract

本发明属于无线通信设备技术领域,涉及集成射频锁相环型频率合成器。由采用CMOS工艺集成在一个芯片上的数字单元部件,模拟单元部件和由离片元件实现的环路滤波器组成,其中,该数字单元部件包括;R可编程计数器、P可编程计数器、S可编程计数器、三线串行接口电路、移位寄存器和功耗控制器;该模拟单元包括:鉴频鉴相器、双模预分频器、压控振荡器、电荷泵和恒跨导源;本发明的参考频率、输出频率和电荷泵的电流大小都可以通过三线串行接口进行控制,而且还实现了内部压控振荡器和外部压控振荡器选择、功耗控制等功能,使得该频率合成器具有极大的适应性,可以应用于多种通信系统中。

The invention belongs to the technical field of wireless communication equipment, and relates to an integrated radio frequency phase-locked loop frequency synthesizer. It is composed of a digital unit unit integrated on a chip using a CMOS process, an analog unit unit and a loop filter realized by off-chip components, wherein the digital unit unit includes; R programmable counter, P programmable counter, S programmable A programming counter, a three-wire serial interface circuit, a shift register and a power consumption controller; the analog unit includes: a frequency and phase detector, a dual-mode prescaler, a voltage-controlled oscillator, a charge pump and a constant transconductance source; the present invention The reference frequency, output frequency and the current of the charge pump can be controlled through the three-wire serial interface, and it also realizes the functions of internal voltage-controlled oscillator and external voltage-controlled oscillator selection, power consumption control, etc., making the frequency synthesizer It has great adaptability and can be applied to various communication systems.

Description

集成射频锁相环型频率合成器Integrated RF phase-locked loop frequency synthesizer

技术领域    本发明属于无线通信设备技术领域,特别涉及频率合成器结构设计。Technical Field The present invention belongs to the technical field of wireless communication equipment, and in particular relates to the structural design of a frequency synthesizer.

背景技术    锁相环型频率合成器是一种在无线通信中得到广泛应用的部件,它的输出可以作为各种收发机的本地振荡信号,还可以完成调制、解调和载波恢复等功能。但是,要实现一个集成化的锁相环型频率合成器是比较困难的。它包含了高频模块、低频模块以及数字电路,是一个非常复杂的数/模/射频混合系统。Background Art A phase-locked loop frequency synthesizer is a component that is widely used in wireless communications. Its output can be used as a local oscillator signal for various transceivers, and can also perform functions such as modulation, demodulation, and carrier recovery. However, it is difficult to realize an integrated phase-locked loop frequency synthesizer. It includes high-frequency modules, low-frequency modules and digital circuits, and is a very complex digital/analog/RF hybrid system.

目前锁相环型频率合成器一般采用由离散模块搭成的系统组成,整个系统包含压控振荡器、双模预分频器、可编程计数器、鉴频鉴相器、环路滤波器等模块,每一个模块都是一个单独的芯片。虽然这样可以避免各个模块之间的耦合,从而提供较高的性能。但采用离散模块搭成的系统体积大,成本高,而且模块多了之后必然会降低系统的稳定度。At present, the phase-locked loop frequency synthesizer is generally composed of a system composed of discrete modules. The entire system includes modules such as voltage-controlled oscillators, dual-mode prescalers, programmable counters, frequency and phase detectors, and loop filters. , each module is a separate chip. Although this can avoid the coupling between the various modules, thus providing higher performance. However, the system built with discrete modules is large in size and high in cost, and more modules will inevitably reduce the stability of the system.

发明内容    本发明为克服已有技术的不足之处,提出一种集成射频锁相环型频率合成器,采用便宜的CMOS工艺,将恒跨导源(偏置电路)、压控振荡器、双模预分频器、鉴频鉴相器、电荷泵、各种数字计数器、移位寄存器和控制电路以及与基带电路的三线串行接口集成在同一块芯片上。该频率合成器的参考频率、输出频率和电荷泵的电流大小都可以通过三线串行接口进行控制,而且还实现了内部压控振荡器和外部压控振荡器选择、功耗控制等功能,使得该频率合成器具有极大的适应性,可以应用于多种通信系统中。Summary of the invention In order to overcome the deficiencies of the prior art, the present invention proposes an integrated radio frequency phase-locked loop frequency synthesizer, which adopts a cheap CMOS process and integrates a constant transconductance source (bias circuit), a voltage-controlled oscillator, and a dual-mode The prescaler, frequency and phase detector, charge pump, various digital counters, shift registers and control circuits, as well as the three-wire serial interface with the baseband circuit are integrated on the same chip. The reference frequency, output frequency and charge pump current of the frequency synthesizer can be controlled through the three-wire serial interface, and also realize the selection of internal voltage-controlled oscillator and external voltage-controlled oscillator, power consumption control and other functions, making The frequency synthesizer has great adaptability and can be applied in various communication systems.

本发明提出的一种集成射频锁相环型频率合成器,由采用CMOS工艺集成在一个芯片上的数字单元部件,模拟单元部件和由离片元件实现的环路滤波器组成,其中,该数字单元部件包括;R可编程计数器、P可编程计数器、S可编程计数器、三线串行接口电路、移位寄存器和功耗控制器;该模拟单元包括:鉴频鉴相器、双模预分频器、压控振荡器、电荷泵和恒跨导源;该频率合成器各器件的连接关系为:所说的压控振荡器的输出端与双模预分频器的输入端相连,该双模预分频器的输出端分别与编程P计数器和可编程S计数器输入端相连,该S计数器的输出端与该双模预分频器输入相连,该P计数器的输出端分别与S计数器的输入端及鉴频鉴相器的输入端相连,可编程的R计数器的输入接收参考频率源输入的晶振信号(RER_IN),该可编程的R计数器的输出端与鉴频鉴相器的输入端相连,该鉴频鉴相器的输出端与电荷泵的输入端相连,电荷泵的输出端经环路滤波器与所说的压控振荡器输入端相连;所说的移位寄存器与三线串行接口相连,用于控制R、S和P三个计数器的分频比外及控制整个频率合成器的工作模式;所说的功耗管理模块给各个子模块提供使能信号,而恒跨导源给各模拟单元部件提供偏置,最后所需要的信号由压控振荡器的输出得到。An integrated radio frequency phase-locked loop frequency synthesizer proposed by the present invention is composed of digital unit parts integrated on a chip using CMOS technology, analog unit parts and a loop filter realized by off-chip components, wherein the digital The unit components include: R programmable counter, P programmable counter, S programmable counter, three-wire serial interface circuit, shift register and power consumption controller; the analog unit includes: frequency discrimination phase detector, dual-mode prescaler device, voltage-controlled oscillator, charge pump and constant transconductance source; the connection relationship of each device of the frequency synthesizer is: the output terminal of the said voltage-controlled oscillator is connected with the input terminal of the dual-mode prescaler, and the dual-mode The output terminal of the prescaler is connected with the input terminal of the programming P counter and the programmable S counter respectively, the output terminal of the S counter is connected with the input of the dual-mode prescaler, and the output terminal of the P counter is respectively connected with the input terminal of the S counter Connected to the input terminal of the frequency and phase detector, the input of the programmable R counter receives the crystal oscillator signal (RER_IN) input from the reference frequency source, and the output of the programmable R counter is connected to the input of the frequency and phase detector , the output end of the frequency and phase detector is connected with the input end of the charge pump, and the output end of the charge pump is connected with the input end of the said voltage controlled oscillator through the loop filter; the said shift register is connected with the three-wire serial The interface is connected to control the frequency division ratio of the three counters R, S and P and to control the working mode of the entire frequency synthesizer; the power management module provides enable signals for each sub-module, and the constant transconductance source provides Each analog unit component provides bias, and the final required signal is obtained from the output of the voltage-controlled oscillator.

本发明的特点及效果Features and effects of the present invention

本发明实现了一个完整的集成射频锁相环型频率合成器,它集成了恒跨导源(偏置电路)、压控振荡器、双模预分频器、鉴频鉴相器、电荷泵、各种数字计数器、移位寄存器和控制电路以及与基带电路的三线串行接口。该频率合成器的参考频率、输出频率和电荷泵的电流大小都可以通过串行接口进行控制,而且还实现了内部压控振荡器和外部压控振荡器选择、功耗控制等功能,这些都使得该频率合成器具有极大的适应性,可以应用于多种通信系统中。The present invention realizes a complete integrated RF phase-locked loop frequency synthesizer, which integrates a constant transconductance source (bias circuit), a voltage-controlled oscillator, a dual-mode prescaler, a frequency and phase detector, a charge pump, Various digital counters, shift registers and control circuits as well as a three-wire serial interface to the baseband circuit. The frequency synthesizer's reference frequency, output frequency and charge pump current can be controlled through the serial interface, and it also realizes the selection of internal voltage-controlled oscillator and external voltage-controlled oscillator, power consumption control and other functions, which are all The frequency synthesizer has great adaptability and can be applied in various communication systems.

该频率合成器采用0.25um CMOS工艺实现,测试结果表明,该频率合成器的锁定范围为1.82GHz~1.96GHz,在偏离中心频率25MHz处的相位噪声可以达到-119.25dBc/Hz。该频率合成器的模拟部分采用2.7V的电源电压,消耗的电流约为48mA。The frequency synthesizer is implemented with 0.25um CMOS technology. The test results show that the frequency synthesizer can lock in a range of 1.82GHz to 1.96GHz, and the phase noise at 25MHz away from the center frequency can reach -119.25dBc/Hz. The analog part of the frequency synthesizer uses a supply voltage of 2.7V and consumes about 48mA of current.

附图说明Description of drawings

图1为本发明的锁相环型频率合成器的总体框图。FIG. 1 is an overall block diagram of a phase-locked loop frequency synthesizer of the present invention.

图2为本发明的内部压控振荡器电路的实施例电路图。FIG. 2 is a circuit diagram of an embodiment of the internal voltage-controlled oscillator circuit of the present invention.

图3为本发明的内/外部压控振荡器模式的选择电路实施例电路图。FIG. 3 is a circuit diagram of an embodiment of an internal/external voltage-controlled oscillator mode selection circuit of the present invention.

图4为本发明的恒跨导源电路的实施例电路图。FIG. 4 is a circuit diagram of an embodiment of the constant transconductance source circuit of the present invention.

图5(a)为本发明的使用动态电路技术的双模预分频器实施例方框图。FIG. 5( a ) is a block diagram of an embodiment of a dual-mode prescaler using dynamic circuit technology according to the present invention.

图5(b)为本实施例的D触发器(DFF)的电路图。FIG. 5(b) is a circuit diagram of a D flip-flop (DFF) of this embodiment.

图5(c)为本实施例的或非门触发器(NOR_DFF)的电路图。FIG. 5(c) is a circuit diagram of the NOR flip-flop (NOR_DFF) of this embodiment.

图6为本发明的电荷泵的结构实施例示意图。FIG. 6 is a schematic diagram of a structural embodiment of the charge pump of the present invention.

图7为本发明的环路滤波器电路的实施例电路图。FIG. 7 is a circuit diagram of an embodiment of the loop filter circuit of the present invention.

图8为本发明的锁相环型频率合成器的简单仿真模型图。FIG. 8 is a simple simulation model diagram of the phase-locked loop frequency synthesizer of the present invention.

图9为锁定状态下本实施例的输出频谱图。FIG. 9 is an output spectrum diagram of this embodiment in a locked state.

图10为在锁定状态下,用示波器观测到的本实施例的鉴频鉴相器两个输入端的波形。FIG. 10 is the waveforms at the two input terminals of the frequency and phase detector of this embodiment observed with an oscilloscope in the locked state.

具体实施方式    本发明提出的锁相环型频率合成器结合附图及实施例详细说明如下:DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The phase-locked loop frequency synthesizer proposed by the present invention is described in detail in conjunction with the accompanying drawings and embodiments as follows:

本发明的锁相环型频率合成器的总体框图如图1所示,由采用CMOS工艺集成在一个芯片上的数字单元部件,模拟单元部件和由离片元件实现的环路滤波器组成,其中,该数字单元部件包括;三个可编程计数器(R计数器、P计数器、S计数器)、三线串行接口电路、移位寄存器和功耗控制器;该模拟单元包括:鉴频鉴相器、双模预分频器、压控振荡器和恒跨导源。该频率合成器中各模块的连接关系为:The overall block diagram of the phase-locked loop frequency synthesizer of the present invention is as shown in Figure 1, is made up of the digital unit part that adopts CMOS technology to be integrated on a chip, the analog unit part and the loop filter that are realized by off-chip components, wherein , the digital unit components include; three programmable counters (R counter, P counter, S counter), three-wire serial interface circuit, shift register and power consumption controller; the analog unit includes: frequency and phase detector, dual Modulo Prescaler, Voltage Controlled Oscillator, and Constant Transconductance Source. The connection relationship of each module in the frequency synthesizer is:

压控振荡器的输出送往双模预分频器进行分频,分频后的结果送往可编程P计数器和可编程S计数器进行进一步的分频,S计数器的结果反馈回双模预分频器控制其分频比,而P计数器的输出则控制S计数器的复位操作,同时P计数器的输出送往鉴频鉴相器,和从参考频率源来的晶振信号(RER_IN)在鉴频鉴相器中进行鉴频鉴相,参考频率源输入的晶振信号(RER_IN)需经可编程的R计数器进行经一步的分频,鉴频鉴相器的输出控制电荷泵的开关,电荷泵的输出经环路滤波器滤波后,控制压控振荡器的振荡频率,最后所需要的信号由压控振荡器的输出得到。The output of the voltage controlled oscillator is sent to the dual-mode prescaler for frequency division, and the result after frequency division is sent to the programmable P counter and programmable S counter for further frequency division, and the result of the S counter is fed back to the dual-mode prescaler The frequency divider controls its frequency division ratio, and the output of the P counter controls the reset operation of the S counter. At the same time, the output of the P counter is sent to the frequency and phase detector, and the crystal oscillator signal (RER_IN) from the reference frequency source is used in the frequency discrimination. Frequency discrimination and phase discrimination are carried out in the phase detector. The crystal oscillator signal (RER_IN) input by the reference frequency source needs to be divided by a programmable R counter. The output of the frequency and phase detector controls the switch of the charge pump, and the output of the charge pump After being filtered by the loop filter, the oscillation frequency of the voltage-controlled oscillator is controlled, and finally the required signal is obtained from the output of the voltage-controlled oscillator.

其中,数字部件的R计数器对晶体振荡器给出的信号进行分频,控制该频率合成器可以实现的最小频率间隔,它的分频比由移位寄存器控制,可以从3变化到255。P计数器、S计数器和模拟部分的双模预分频器组合在一起,可以实现对压控振荡器输出的信号进行分频,这两个计数器也是由内部寄存器控制的可编程计数器。当双模预分频器的分频模式为32/33时,S计数器的分频比可以在0到31之间变化,P计数器的分频比可以在3到511之间变化;当双模预分频器的分频模式为64/65时,S计数器的分频比可以在0到63之间变化,P计数器的分频比可以在3到255之间变化。移位寄存器除了控制R、S和P三个计数器的分频比外,还控制着整个频率合成器的工作模式(双模预分频器分频模式选择、电荷泵电流设置、VCO调谐特性选择(正调谐特性/负调谐特性)、复用输出端LD控制以及电荷泵的测试模式选择等)。内部寄存器的内容通过三线串行接口(CLK、DATA和LE)写入,这样就可以通过外部的基带处理器来控制频率合成器的工作。功耗管理模块给各个子模块提供使能信号,根据应用需要使某些子模块处于不工作状态,以节省系统功耗。而恒跨导源给各模拟单元部件提供偏置。Among them, the R counter of the digital part divides the frequency of the signal given by the crystal oscillator to control the minimum frequency interval that the frequency synthesizer can achieve. Its frequency division ratio is controlled by a shift register and can vary from 3 to 255. The combination of P counter, S counter and the dual-mode prescaler of the analog part can realize the frequency division of the signal output by the voltage-controlled oscillator. These two counters are also programmable counters controlled by internal registers. When the frequency division mode of the dual-mode prescaler is 32/33, the frequency division ratio of the S counter can vary from 0 to 31, and the frequency division ratio of the P counter can vary from 3 to 511; when the dual-mode When the frequency division mode of the prescaler is 64/65, the frequency division ratio of the S counter can vary from 0 to 63, and the frequency division ratio of the P counter can vary from 3 to 255. In addition to controlling the frequency division ratio of the three counters R, S and P, the shift register also controls the working mode of the entire frequency synthesizer (dual-mode prescaler frequency division mode selection, charge pump current setting, VCO tuning characteristic selection (Positive tuning characteristics/negative tuning characteristics), multiplexing output LD control and test mode selection of the charge pump, etc.). The content of the internal register is written through the three-wire serial interface (CLK, DATA and LE), so that the work of the frequency synthesizer can be controlled by an external baseband processor. The power management module provides enable signals for each sub-module, and makes some sub-modules in an inactive state according to application requirements, so as to save system power consumption. The constant transconductance source provides bias for each analog unit component.

该频率合成器集成的一个在片压控振荡器,它的电路实施例结构如图2所示,互相耦合的NMOS管对M1和M2补偿LC谐振回路的损耗,其中M1的栅极接到M2的漏极,同时接到片上电感L2和二极管D2的一极,M2的栅极接到M1的漏极,同时接到片上电感L1和二极管D1的一极,二极管D1、D2和片上电感L1、L2组成谐振回路,其中D1和D2的另一极接在一起,并接到环路滤波器的输出Vctr1,而L1和L2的另一极也接在一起,并接到作为电流源的PMOS管M0的漏极和滤波电容C0的一极,滤波电容C0的另一极接到电源VDD上,M0的栅极接到内部集成的恒跨导源提供的偏置电压VPB上,而其源极也接到电源VDD上。该在片压控振荡器提供两个差分的信号L0+和L0-,它们接到在片压控振荡器的输出上,同时也接到与双模预分频器的接口电路上。这两个NMOS管的跨导主要由LC元件的品质因子来决定。L1和L2是3.5圈的非对称在片螺旋型电感,它们均采用1.5um厚度的最上层金属绕制而成,内圈的长度为120um,金属线的宽度为10um,金属线之间的间距为2um,电感量约为3.740nH,在2GHz时的品质因子约为7.4,在1GHz时的品质因子仅为4.2。The frequency synthesizer integrates an on-chip voltage-controlled oscillator. Its circuit embodiment structure is shown in Figure 2. The mutually coupled NMOS transistor pair M1 and M2 compensate the loss of the LC resonant circuit, where the gate of M1 is connected to M2 The drain of M2 is connected to the on-chip inductor L2 and one pole of the diode D2 at the same time, the gate of M2 is connected to the drain of M1, and is connected to the on-chip inductor L1 and one pole of the diode D1 at the same time, and the diodes D1, D2 and the on-chip inductor L1, L2 forms a resonant tank, where the other poles of D1 and D2 are connected together and connected to the output Vctr1 of the loop filter, and the other poles of L1 and L2 are also connected together and connected to the PMOS tube as a current source The drain of M0 and one pole of the filter capacitor C0, the other pole of the filter capacitor C0 is connected to the power supply VDD, the gate of M0 is connected to the bias voltage VPB provided by the internal integrated constant transconductance source, and its source is also Connect to the power supply VDD. The on-chip voltage-controlled oscillator provides two differential signals L0+ and L0-, which are connected to the output of the on-chip voltage-controlled oscillator and also connected to the interface circuit with the dual-mode prescaler. The transconductance of the two NMOS tubes is mainly determined by the quality factor of the LC component. L1 and L2 are asymmetrical on-chip spiral inductors with 3.5 turns. They are all wound with the top layer of metal with a thickness of 1.5um. The length of the inner ring is 120um, the width of the metal wire is 10um, and the distance between the metal wires It is 2um, the inductance is about 3.740nH, the quality factor at 2GHz is about 7.4, and the quality factor at 1GHz is only 4.2.

D1和D2是P+扩散区和N阱形成的容抗管,它工作于反向截止区,每一指PN结的长度为0.58um,宽度为40um,共有15指。当反向截止电压从3.0V变化到0V时,容抗管的电容量从0.62pF增加到1.02pF。M0是由偏置电压VPB控制的尾电流源,为了减小1/f噪声对相位噪声的影响,M0使用了长沟道的PMOS管。10pF的滤波电容C0为S节点的高次谐波提供到交流地的低阻抗通道,可以衰减尾电流源产生的高频噪声成分,提高压控振荡器的相位噪声性能。VPB是由恒跨导源产生的偏置电压。通过使用恒跨导源,可以使得M1和M2的跨导不受温度变化和电源电压变化的影响而保持恒定,这样互补耦合对产生的负阻也可以保持恒定,从而减少了温度变化和电源电压变化对压控振荡器输出幅度和相位噪声的影响。同时,VPB还是该压控振荡器的使能控制端,当VPB的电压为VDD时,该压控振荡器将不工作。D1 and D2 are capacitive reactance tubes formed by the P+ diffusion region and the N well. They work in the reverse cut-off region. The length of each finger PN junction is 0.58um, the width is 40um, and there are 15 fingers in total. When the reverse cut-off voltage changes from 3.0V to 0V, the capacitance of the capacitive reactance tube increases from 0.62pF to 1.02pF. M0 is a tail current source controlled by the bias voltage VPB. In order to reduce the influence of 1/f noise on the phase noise, M0 uses a long-channel PMOS transistor. The 10pF filter capacitor C0 provides a low-impedance channel for the high-order harmonics of the S node to the AC ground, which can attenuate the high-frequency noise components generated by the tail current source and improve the phase noise performance of the voltage-controlled oscillator. VPB is a bias voltage generated by a constant transconductance source. By using a constant transconductance source, the transconductance of M1 and M2 can be kept constant without being affected by temperature changes and power supply voltage changes, so that the negative resistance generated by the complementary coupling pair can also be kept constant, thereby reducing temperature changes and power supply voltage changes Effect on VCO output amplitude and phase noise. At the same time, VPB is also an enabling control terminal of the voltage-controlled oscillator, and when the voltage of VPB is VDD, the voltage-controlled oscillator will not work.

为了扩大应用范围,该频率合成器还可以增设一个离片的压控振荡器,这时内部压控振荡器不工作。在这种情况下,还需有一内/外部压控振荡器模式的选择电路。通过选用高性能的外部压控振荡器,这种频率合成器可以应用于某些性能要求较高的系统中。In order to expand the application range, the frequency synthesizer can also add an off-chip voltage-controlled oscillator, and the internal voltage-controlled oscillator does not work at this time. In this case, an internal/external VCO mode selection circuit is also required. By selecting a high-performance external voltage-controlled oscillator, this frequency synthesizer can be applied to some systems with higher performance requirements.

图3给出了内/外部压控振荡器模式的选择电路实施例,该选择电路由晶体管MS1-MS16、隔直电容CS3、CS4、电阻RS5、RS6和电感LS1构成,其中,由晶体管MS1和电阻RS5构成共源放大器,对内部压控振荡器产生的信号进行第一级放大;由晶体管MS11、MS12和电阻RS6构成另一个放大器,对从外部的离片压控振荡器产生的振荡信号进行放大,这两路信号再由晶体管MS5~MS8构成第二级放大器中耦合在一起;然后由晶体管MS9、MS10和电感LS1构成的第三级放大器进行最后放大后输入到双模预分频器,由晶体管MS13~MS16构成偏置电路;各器件的连接关系为:从内部压控振荡器来的信号INT_VCO输入晶体管MS1的栅极,MS1的源极接地,漏极接负载电阻RS5和隔直电容CS3的一极;晶体管MS5的栅极接到功耗控制信号EN1B,源极接电源VDD,漏极接晶体管MS6的源极,晶体管MS6的栅极和电容CS3的另一端,晶体管MS6的漏极,MS7的漏极,MS7的栅极,MS10的栅极,CS4的一端相连;MS7的源极接MS8的漏极,MS8的栅极接功耗控制信号EN1和MS9的栅极,MS8的源极接地;MS9的漏极接MS10的源极,MS9的源极接地,MS10的漏极接片上电感LS1的一端和输出到双模预分频器的接口Fdmp,晶体管MS13的源极接地,漏极接其栅极,MS11的栅极和MS14的源极相连,MS14的漏极接MS14栅极,MS12的栅极和MS15的漏极相连,MS15的栅极接偏置信号VP2,其源极接MS16的漏极,MS16的栅极接控制信号ENP,其源极接电源VDD,MS11的漏极接外部压控振荡信号EXT_VCO和MS12的源极,MS11的源极接地,MS12的漏极接RS6的一端和CS4的一端,RS6的另一端接VDD。Figure 3 shows an embodiment of the selection circuit of the internal/external voltage-controlled oscillator mode. The selection circuit is composed of transistors MS1-MS16, DC blocking capacitors CS3, CS4, resistors RS5, RS6 and inductor LS1. Among them, transistors MS1 and Resistor RS5 constitutes a common-source amplifier, which amplifies the signal generated by the internal voltage-controlled oscillator in the first stage; transistors MS11, MS12 and resistor RS6 constitute another amplifier, which amplifies the oscillation signal generated from the external off-chip voltage-controlled oscillator Amplified, the two signals are then coupled together in the second-stage amplifier composed of transistors MS5~MS8; then the third-stage amplifier composed of transistors MS9, MS10 and inductor LS1 is finally amplified and then input to the dual-mode prescaler. The bias circuit is composed of transistors MS13~MS16; the connection relationship of each device is: the signal INT_VCO from the internal voltage-controlled oscillator is input to the gate of transistor MS1, the source of MS1 is grounded, and the drain is connected to the load resistor RS5 and the DC blocking capacitor One pole of CS3; the gate of transistor MS5 is connected to the power consumption control signal EN1B, the source is connected to the power supply VDD, the drain is connected to the source of transistor MS6, the gate of transistor MS6 and the other end of capacitor CS3, the drain of transistor MS6 , the drain of MS7, the gate of MS7, the gate of MS10, and one end of CS4 are connected; the source of MS7 is connected to the drain of MS8, the gate of MS8 is connected to the power consumption control signal EN1 and the gate of MS9, and the source of MS8 The drain of MS9 is connected to the source of MS10, the source of MS9 is grounded, one end of the inductor LS1 on the drain of MS10 and the interface Fdmp output to the dual-mode prescaler, the source of the transistor MS13 is grounded, and the drain The gate of MS11 is connected to the source of MS14, the drain of MS14 is connected to the gate of MS14, the gate of MS12 is connected to the drain of MS15, the gate of MS15 is connected to the bias signal VP2, and its source Connect to the drain of MS16, the gate of MS16 is connected to the control signal ENP, its source is connected to the power supply VDD, the drain of MS11 is connected to the external voltage-controlled oscillation signal EXT_VCO and the source of MS12, the source of MS11 is connected to ground, and the drain of MS12 is connected to One end of RS6 and one end of CS4, the other end of RS6 is connected to VDD.

EN1B,EN1和ENP是功耗控制信号,由功耗控制模块产生,VP2是由片上集成的恒跨导源产生的偏置信号。EN1B, EN1 and ENP are power consumption control signals, which are generated by the power consumption control module, and VP2 is a bias signal generated by the on-chip constant transconductance source.

在图3,CS3~CS4都是在片隔直电容,可以避免各个模块的直流工作点互相干扰。由MS1和RS5构成的共源放大器对内部压控振荡器的输出信号进行放大,并将后级电路与内部压控振荡器隔离,避免后级电路对内部压控振荡器的影响。这三个共源放大器的偏置都由恒跨导源产生。外部压控振荡器信号从共栅级工作的晶体管MS12的源端进入,通过调节MS12的跨导,可以实现外部压控振荡器信号输入端的阻抗匹配。由恒跨导源(控制VP2的电平)和MS13~MS16构成的偏置电路为MS11和MS12提供偏置。从内部压控振荡器和从外部压控振荡器来的振荡信号通过MS5~MS8组成的输出/输入耦合反相器合到同一节点,然后由MS10和在片电感LS1组成的LC调谐放大器进行放大,放大后的信号送往双模预分频器的输入端。该电路还实现了使能控制,根据使能信号和内/外部压控振荡器选择信号的逻辑电平,控制各个子电路的工作状态,从而可以减小不必要的功耗并避免各信号之间的干扰。In Figure 3, CS3~CS4 are all on-chip DC blocking capacitors, which can prevent the DC operating points of each module from interfering with each other. The common-source amplifier composed of MS1 and RS5 amplifies the output signal of the internal voltage-controlled oscillator, and isolates the subsequent stage circuit from the internal voltage-controlled oscillator to avoid the influence of the latter stage circuit on the internal voltage-controlled oscillator. All three common source amplifiers are biased by constant transconductance sources. The signal of the external voltage-controlled oscillator enters from the source terminal of the transistor MS12 working in the common gate stage, and by adjusting the transconductance of MS12, the impedance matching of the input terminal of the signal of the external voltage-controlled oscillator can be realized. The bias circuit composed of constant transconductance source (controlling the level of VP2) and MS13-MS16 provides bias for MS11 and MS12. The oscillating signals from the internal voltage-controlled oscillator and the external voltage-controlled oscillator are combined to the same node through the output/input coupling inverter composed of MS5~MS8, and then amplified by the LC tuned amplifier composed of MS10 and on-chip inductor LS1 , the amplified signal is sent to the input of the dual-mode prescaler. The circuit also realizes the enable control, and controls the working status of each sub-circuit according to the enable signal and the logic level of the internal/external voltage-controlled oscillator selection signal, thereby reducing unnecessary power consumption and avoiding the gap between the signals. Interference between.

该频率合成器使用在片恒跨导源来给各个子模块提供偏置,这样各个子模块的跨导可以保持恒定,减少了电源电压变化和温度变化对各个子模块电路性能的影响。该恒跨导源的电路图如图4所示。由晶体管M7~M10和电阻R0组成的自偏置网络是该恒跨导源的核心电路,其中PMOS管M7的源极接电源VDD,其栅极接M8的栅极,M8的漏极和M10的漏极,M8的源极接电源VDD,M7的漏极接M9的漏极,M9的栅极和M10的栅极,M9的源极接地,M10的源极接电阻R0的一端,R0的另一端接地。The frequency synthesizer uses an on-chip constant transconductance source to provide bias for each sub-module, so that the transconductance of each sub-module can be kept constant, reducing the impact of power supply voltage changes and temperature changes on the performance of each sub-module circuit. The circuit diagram of the constant transconductance source is shown in Figure 4. The self-bias network composed of transistors M7~M10 and resistor R0 is the core circuit of the constant transconductance source, where the source of the PMOS transistor M7 is connected to the power supply VDD, its gate is connected to the gate of M8, the drain of M8 and the Drain, the source of M8 is connected to the power supply VDD, the drain of M7 is connected to the drain of M9, the gate of M9 and the gate of M10, the source of M9 is grounded, the source of M10 is connected to one end of the resistor R0, and the other end of R0 One end is grounded.

恒跨导源的工作原理说明如下:The working principle of the constant transconductance source is explained as follows:

设M7和M8的尺寸相同,流过它们的电流分别为I1和I2,忽略沟道长度调制效应和衬偏调制效应,则:Assuming that M7 and M8 have the same size, the currents flowing through them are I 1 and I 2 respectively, ignoring the channel length modulation effect and the lining offset modulation effect, then:

II 11 == μμ nno CC oxox 22 WW 99 LL 99 (( VV VNBVNB -- VV TT )) 22 -- -- -- (( 11 ))

II 22 == μμ nno CC oxox 22 WW 1010 LL 1010 (( VV VNBVNB -- II 22 RR 00 -- VV TT )) 22 -- -- -- (( 22 ))

其中,μn是NMOS管的迁移率,Cox是NMOS管的单位面积栅电容,VT是NMOS管的阈值电压,R0是电阻R0的电阻值,VVNB是输出节点VNB的节点电压。由公式(1)和(2)可以推导出I1与电阻R0阻值之间的关系:Among them, μ n is the mobility of the NMOS transistor, C ox is the gate capacitance per unit area of the NMOS transistor, V T is the threshold voltage of the NMOS transistor, R 0 is the resistance value of the resistor R0, and V VNB is the node voltage of the output node VNB. The relationship between I 1 and the resistance value of resistor R0 can be deduced from formulas (1) and (2):

II 11 == 22 RR 00 22 μμ nno CC oxox WW 99 LL 99 (( 11 -- WW 99 // LL 99 WW 1010 // LL 1010 )) -- -- -- (( 33 ))

则晶体管M9的跨导为:Then the transconductance of transistor M9 is:

gg mm == 22 RR 00 (( 11 -- WW 99 // LL 99 WW 1010 // LL 1010 )) -- -- -- (( 44 ))

由公式(4)可以看出,流过M9的电流I1以及M9的跨导gm都仅与电阻R0的阻值和M9、M10的尺寸相关。依据电流镜原理,在忽略沟道长度调制效应时,由该恒跨导源提供偏置的各子模块的电流及其跨导也仅与R0的阻值及各晶体管的尺寸有关。It can be seen from formula (4) that the current I 1 flowing through M9 and the transconductance g m of M9 are only related to the resistance value of resistor R0 and the sizes of M9 and M10. According to the current mirror principle, when the channel length modulation effect is ignored, the current and transconductance of each sub-module biased by the constant transconductance source are only related to the resistance value of R0 and the size of each transistor.

为了避免温度变化以及工艺偏差对恒跨导源的影响,电阻R0采用了离片的高质量电阻元件。最后实现的恒跨导源中,流过M9的电流约为100uA。In order to avoid the influence of temperature change and process deviation on the constant transconductance source, resistor R0 adopts off-chip high-quality resistive elements. In the last realized constant transconductance source, the current flowing through M9 is about 100uA.

本发明的频率合成器中的双模预分频器采用了动态电路技术,其实施例电路图如图5(a)所示,它由或非门触发器NOR_DFF1、NOR_DFF2和D触发器DFF构成的同步4分频/5分频的分频器(图中虚线框内)、异步计数器和控制逻辑器三部分组成。当内部节点MD为逻辑高电平时,同步分频器的分频比为4;当MD为逻辑低电平时,同步分频器的分频比为5。外部给出的控制信号SW用来选择两组分频比:128分频/129分频或者64分频/65分频,而Mode信号则在双模预分频器的两种分频模式之间进行选择:N分频或者N+1分频(N依SW控制信号的不同,为128或者64)。其中,CLK是压控振荡信号,它接到或非门触发器NOR_DFF1、NOR_DFF2的CLK输入端和触发器DFF的CLK输入端,触发器DFF的输出端Q+接到或非门触发器NOR_DFF1的D1输入端,输出端Q-接到NOR_DFF2的D1输入端,NOR_DFF1的D2输入端接到NOR_DFF2的输出端Q+,其输出端Q+接到DFF的输入端D和异步计数器的输入端,NOR_DFF2的输入端D2接控制逻辑器的输出,NOR_DFF1和NOR_DFF2的输出端Q-都悬空,控制逻辑器的输入由异步计数器提供,异步计数器同时提供分频信号Fout。The dual-mode prescaler in the frequency synthesizer of the present invention has adopted dynamic circuit technology, and its embodiment circuit diagram is as shown in Figure 5 (a), and it is made of NOR gate flip-flop NOR_DFF1, NOR_DFF2 and D flip-flop DFF The synchronous 4/5 frequency divider (in the dotted line box in the figure), the asynchronous counter and the control logic are composed of three parts. When the internal node MD is logic high level, the frequency division ratio of the synchronous frequency divider is 4; when MD is logic low level, the frequency division ratio of the synchronous frequency divider is 5. The external control signal SW is used to select two frequency division ratios: 128 frequency division/129 frequency division or 64 frequency division/65 frequency division, and the Mode signal is between the two frequency division modes of the dual-mode prescaler. Choose between: N frequency division or N+1 frequency division (N is 128 or 64 depending on the SW control signal). Among them, CLK is a voltage-controlled oscillating signal, which is connected to the CLK input terminal of the NOR gate trigger NOR_DFF1, NOR_DFF2 and the CLK input terminal of the trigger DFF, and the output terminal Q+ of the trigger DFF is connected to D1 of the NOR gate trigger NOR_DFF1 The input terminal, the output terminal Q- is connected to the D1 input terminal of NOR_DFF2, the D2 input terminal of NOR_DFF1 is connected to the output terminal Q+ of NOR_DFF2, and its output terminal Q+ is connected to the input terminal D of DFF and the input terminal of the asynchronous counter, the input terminal of NOR_DFF2 D2 is connected to the output of the control logic, the output terminals Q- of NOR_DFF1 and NOR_DFF2 are suspended, the input of the control logic is provided by the asynchronous counter, and the asynchronous counter provides the frequency division signal Fout at the same time.

同步4分频/5分频的分频器是整个双模预分频器中最关键的部分,它的速度直接决定了双模预分频器所能达到的最高工作频率,它的功耗也决定了整个电路的功耗水平。目前许多研究人员对这一部分进行了大量的研究,提出了很多方法,其中,将与非门和D触发器耦合在一起组成与非门触发器来实现双模选择是最常用的方法。但是,当同步分频器采用PMOS管预充的动态电路技术时,放电通道上有两个串联的NMOS管,串联的MOS管必将增加电路的延时,从而降低了电路的工作速度。Synchronous 4/5 frequency divider is the most critical part of the entire dual-mode prescaler, its speed directly determines the highest operating frequency that the dual-mode prescaler can achieve, its power consumption It also determines the power consumption level of the whole circuit. At present, many researchers have done a lot of research on this part and proposed many methods, among which, coupling NAND gate and D flip-flop to form NAND flip-flop to realize dual-mode selection is the most commonly used method. However, when the synchronous frequency divider adopts the dynamic circuit technology of PMOS tube pre-charging, there are two NMOS tubes in series on the discharge channel, and the series connection of MOS tubes will increase the delay of the circuit, thereby reducing the working speed of the circuit.

本发明考虑到两并联NMOS管的延时必将小于两串联的NMOS管,提出将或非门和D触发器耦合组成或非门触发器来实现双模选择的新分频器结构。本实施例采用的D触发器(DFF)的电路图如图5(b)所示,其中,时钟CLK接MP1、MP2、MN3、MN5的栅极;MP1的源极接电源;MP1的漏极接MN1的漏极和MN6、MP4和MN2的栅极;数据端D接MN1的栅极;MN1的源极接地;MP4的源极接电源,漏极接MN6的漏极和MN4的栅极;MN6的源极接地;MP2的源极接电源,漏极接MN2的漏极和MP3的栅极;MN2的源极接MN3的漏极;MN3的源极接地;MP3的源极接电源,漏极接MP5、MN7的栅极和MN4的漏极,同时接输出端Q-;MN4的源极接MN5的漏极,MN5的源极接地;MP5的源极接电源,漏极接MN7的漏极和输出端Q+;MN7的源极接地。其工作原理如下:晶体管MP1和MN1组成该触发器的输入级,MP2、MN2和MN3组成第二级,而MP3、MN4和MN5组成输出级,MP5和MN7构成的反相器对Q-求反,而MP4和MN6组成的反相器控制MN4管的状态。它的工作原理是:当CLK为逻辑低电平时,该触发器处于锁定状态,由CLK控制的PMOS管对内部节点进行充电;在CLK的上升沿,该触发器进行求值,根据输入端D的电平改变自身的状态。相比于Qiuting Huang等人提出的触发器,该触发器输入级的充电通道和输出级的放电通道都少了一个晶体管,从而将原来的静态电路改为了动态电路。这样可以减轻D输入端以及第二级的容性负载,缩短触发器的充电和放电时间,提高同步分频器的工作速度,这样的优点使得它在射频领域得到了广泛的应用。相比于原始电路,使用动态电路的触发器的静态功耗增加了,好在对于射频领域应用,动态功耗是功耗中最主要的部分,增加的静态功耗在总功耗中占的比例很小,不会显著的增加整个电路的功耗。Considering that the time delay of two parallel NMOS transistors must be shorter than that of two series connected NMOS transistors, the present invention proposes a new frequency divider structure that couples a NOR gate and a D flip-flop to form a NOR gate flip-flop to realize dual-mode selection. The circuit diagram of the D flip-flop (DFF) adopted in this embodiment is shown in Figure 5 (b), wherein, the clock CLK is connected to the gates of MP1, MP2, MN3, and MN5; the source of MP1 is connected to the power supply; the drain of MP1 is connected to The drain of MN1 and the gates of MN6, MP4 and MN2; the data terminal D is connected to the gate of MN1; the source of MN1 is grounded; the source of MP4 is connected to the power supply, and the drain is connected to the drain of MN6 and the gate of MN4; MN6 The source of MP2 is connected to the power supply, the drain is connected to the drain of MN2 and the gate of MP3; the source of MN2 is connected to the drain of MN3; the source of MN3 is grounded; the source of MP3 is connected to the power supply, and the drain Connect the gate of MP5 and MN7 and the drain of MN4, and connect the output terminal Q- at the same time; the source of MN4 is connected to the drain of MN5, and the source of MN5 is grounded; the source of MP5 is connected to the power supply, and the drain is connected to the drain of MN7 And the output terminal Q+; the source of MN7 is grounded. Its working principle is as follows: Transistors MP1 and MN1 form the input stage of the flip-flop, MP2, MN2 and MN3 form the second stage, while MP3, MN4 and MN5 form the output stage, and the inverter formed by MP5 and MN7 reverses the Q- , while the inverter composed of MP4 and MN6 controls the state of the MN4 tube. Its working principle is: when CLK is logic low level, the flip-flop is in the locked state, and the PMOS tube controlled by CLK charges the internal node; on the rising edge of CLK, the flip-flop evaluates, according to the input terminal D level to change its state. Compared with the flip-flop proposed by Qiuting Huang et al., the charging channel of the input stage and the discharging channel of the output stage of this flip-flop have one less transistor, thus changing the original static circuit into a dynamic circuit. This can reduce the capacitive load of the D input terminal and the second stage, shorten the charging and discharging time of the trigger, and improve the working speed of the synchronous frequency divider. Such advantages make it widely used in the field of radio frequency. Compared with the original circuit, the static power consumption of the flip-flop using the dynamic circuit is increased. Fortunately, for the application in the radio frequency field, the dynamic power consumption is the most important part of the power consumption, and the increased static power consumption accounts for the total power consumption. The ratio is small and will not significantly increase the power consumption of the entire circuit.

图5(c)(NOR_DFF)给出了或非门触发器的电路图,与DFF相比,仅仅是输入级作了改变,它的输入级由MP1、MN0和MN1组成,放电通道由两个并联的NMOS管组成。相比于文献中采用的由两串联NMOS管构成放电通道的方案,该方法可以减小触发器的放电时间,提高电路的工作速度。将或非门和D触发器耦合,使得逻辑门和快速存储元件只引入同一延时,从而可以降低同步分频器的传输延时,提高电路的工作速度。相比于传统的与非门触发器,或非门触发器将具有更小的延时,可以进一步提高电路的工作速度。Figure 5(c) (NOR_DFF) shows the circuit diagram of the NOR gate flip-flop. Compared with DFF, only the input stage has been changed. Its input stage is composed of MP1, MN0 and MN1, and the discharge channel is composed of two parallel Composed of NMOS tubes. Compared with the scheme in the literature that consists of two NMOS tubes connected in series to form a discharge channel, this method can reduce the discharge time of the flip-flop and improve the working speed of the circuit. Coupling the NOR gate and the D flip-flop makes the logic gate and the fast storage element only introduce the same delay, so that the transmission delay of the synchronous frequency divider can be reduced and the working speed of the circuit can be improved. Compared with the traditional NAND trigger, the NOR trigger will have a smaller delay, which can further improve the working speed of the circuit.

异步计数器是由五个级联的D触发器构成的触发器链,它的工作频率仅是输入频率的四分之一或者五分之一,对其速度的要求降低了。为了保持整个电路具有很高的性能,异步计数器应该具有很低的功耗,没有毛刺并且对最低输入频率没有限制。本实施例采用了Q.Huang等人提出的通用快速TSPC D触发器。The asynchronous counter is a flip-flop chain composed of five cascaded D flip-flops. Its working frequency is only 1/4 or 1/5 of the input frequency, and its speed requirement is reduced. To keep the overall circuit high performance, the asynchronous counter should have low power consumption, be glitch-free and have no restriction on the minimum input frequency. This embodiment adopts the universal fast TSPC D flip-flop proposed by Q.Huang et al.

控制逻辑器控制同步分频器的分频比并选择输出频率。它的功能是控制同步4分频/5分频分频器的分频比和该双模预分频器的输出模式,它采用了双模预分频器中通常采用的控制逻辑结构。The control logic controls the division ratio of the synchronous divider and selects the output frequency. Its function is to control the frequency division ratio of the synchronous 4/5 frequency divider and the output mode of the dual-mode prescaler, and it adopts the control logic structure usually used in the dual-mode prescaler.

晶体振荡器和压控振荡器的输出信号经分频后,送往鉴频鉴相器,产生控制电荷泵开关的控制信号,本发明的鉴频鉴相器采用了传统的鉴频鉴相器电路结构。The output signal of the crystal oscillator and the voltage-controlled oscillator is sent to the frequency and phase detector after frequency division to generate the control signal for controlling the charge pump switch. The frequency and phase detector of the present invention has adopted a traditional frequency and phase detector Circuit configuration.

鉴频鉴相器的输出经过逻辑控制模块产生电荷泵的控制信号。由于电荷泵采用了开关电路技术,开关电路所遇到的电荷注入问题也会影响频率合成器的性能。该频率合成器所使用的鉴频鉴相器引入了延时单元,即使在锁定的情况下,鉴频鉴相器输出端也会出现短时间的低电平,引起电荷泵周期性的开关动作,由此而产生的周期性的电荷注入问题会使该频率合成器的输出频谱产生毛刺。为了减轻电荷注入问题引起的毛刺,该频率合成器采用了如图6所示的电荷泵实施例结构,该电荷泵由四个开关S1~S4和电流源、电流沉构成,其中电流源的一极接电源VDD,另一极接开关S2和S3的一端,开关S2的另一端接参考电平Vref和开关S4的一端,S4的另一端接电流沉,S2的另一端接环路滤波器和开关S1的一端,S1的另一端接电流沉,电流沉的一端和开关S1、S4相连,另一端和地相连,开关S1~S4的控制信号由鉴频鉴相器模块提供。The output of the frequency and phase detector generates the control signal of the charge pump through the logic control module. Since the charge pump uses switching circuit technology, the charge injection problem encountered by the switching circuit will also affect the performance of the frequency synthesizer. The frequency and phase detector used in the frequency synthesizer introduces a delay unit. Even in the case of locking, the output of the frequency and phase detector will appear low for a short time, causing the charge pump to switch periodically. , the resulting periodic charge injection will cause glitches in the output spectrum of the frequency synthesizer. In order to alleviate the glitches caused by charge injection, the frequency synthesizer adopts the structure of the charge pump embodiment shown in Figure 6. The charge pump is composed of four switches S1-S4, current sources and current sinks. One of the current sources One pole is connected to the power supply VDD, the other pole is connected to one end of the switches S2 and S3, the other end of the switch S2 is connected to the reference level Vref and one end of the switch S4, the other end of S4 is connected to the current sink, and the other end of S2 is connected to the loop filter and One end of the switch S1, the other end of S1 is connected to the current sink, one end of the current sink is connected to the switches S1 and S4, and the other end is connected to the ground, and the control signals of the switches S1-S4 are provided by the frequency and phase detector module.

该电荷泵工作过程为:当压控振荡器压控端的电压需要升高时,S2和S4闭合,S1和S3打开,电流源的电流通过S2流往环路滤波器,电流沉的电流通过开关S4由Vref所接的偏置电路提供;当压控振荡器压控端的电压需要降低时,S1和S3闭合,S2和S4打开,电流沉通过S1从环路滤波器吸取电流,电流源的电流通过S3流往Vref所接的偏置电路;当压控振荡器压控端的电压应该保持不变时,S1和S2同时闭合,S3和S4同时打开,或者,S1和S2同时打开,S3和S4同时闭合,这时没有电流流过节点Vref和Vout。这样,电流源和电流沉总处于工作状态,消除了电流源和电流沉工作状态转换所引入的额外延时以及与之相关的干扰。S1~S4均采用由PMOS管和NMOS管组成的CMOS开关对,通过使同一个开关的PMOS管控制信号和NMOS管控制信号同时往相反的电平方向变化,PMOS管的电荷注入和NMOS管的电荷注入可以互相抵消,从而降低时钟馈通效应对电路的影响。同一个开关的两个控制信号是对其中的一个控制信号取反得到的,为了消除取反操作引入的延时,两个控制信号都加入了反相器链,其中一个控制信号的反相器链比另一个控制信号的反相器链多了一级反相器,通过调节两组反相器链中各反相器的尺寸,可以使得两组反相器链引入的延时相等,避免两控制信号不同步发生的电荷注入问题。另外,S3和S4应在开关S1和S2完全打开之后闭合,应在S1和S2闭合之前打开,这样可以使得两个支路相对应的开关不会同时处于闭合状态。这就对两个支路的开关控制信号之间的时序提出了要求,这些不同时序的控制信号可以通过引入不等阈值的反相器链来实现。The working process of the charge pump is: when the voltage of the voltage control terminal of the voltage controlled oscillator needs to increase, S2 and S4 are closed, S1 and S3 are opened, the current of the current source flows to the loop filter through S2, and the current of the current sink passes through the switch S4 is provided by the bias circuit connected to Vref; when the voltage at the voltage-controlled terminal of the voltage-controlled oscillator needs to be reduced, S1 and S3 are closed, S2 and S4 are opened, the current sink draws current from the loop filter through S1, and the current of the current source Flow through S3 to the bias circuit connected to Vref; when the voltage at the voltage control terminal of the voltage-controlled oscillator should remain constant, S1 and S2 are closed at the same time, S3 and S4 are opened at the same time, or, S1 and S2 are opened at the same time, S3 and S4 Closed at the same time, no current flows through the nodes Vref and Vout at this time. In this way, the current source and the current sink are always in the working state, which eliminates the extra delay introduced by the switching of the working state of the current source and the current sink and the interference related thereto. S1~S4 all adopt CMOS switch pair composed of PMOS tube and NMOS tube. By making the PMOS tube control signal and NMOS tube control signal of the same switch change to the opposite level at the same time, the charge injection of PMOS tube and the charge injection of NMOS tube The charge injections can cancel each other out, reducing the impact of clock feedthrough effects on the circuit. The two control signals of the same switch are obtained by inverting one of the control signals. In order to eliminate the delay introduced by the inversion operation, both control signals are added to the inverter chain, and the inverter of one of the control signals The chain has one more stage of inverter than the inverter chain of the other control signal. By adjusting the size of each inverter in the two sets of inverter chains, the delays introduced by the two sets of inverter chains can be equalized to avoid The charge injection problem occurs when the two control signals are not synchronized. In addition, S3 and S4 should be closed after the switches S1 and S2 are fully opened, and should be opened before S1 and S2 are closed, so that the corresponding switches of the two branches will not be in the closed state at the same time. This puts forward requirements on the timing between the switch control signals of the two branches, and these control signals with different timings can be realized by introducing inverter chains with unequal thresholds.

电流源和电流沉可以通过两个控制信号M<1>和M<2>来选择(I0,2I0,3I0,4I0)四种电流值中的一个,其中I0为基准电流,设计值为0.1mA,M<1>和M<2>由内部寄存器控制,这样基带处理器通过三线串行接口可以控制电流源和电流沉的电流值,从而控制锁相环型频率合成器的环路特性。在压控振荡器调谐曲线的线性度不好时,通过这种办法调节电荷泵的电流值还可以起到非线性化处理的作用。The current source and current sink can select one of four current values (I 0 , 2I 0 , 3I 0 , 4I 0 ) through two control signals M<1> and M<2>, where I 0 is the reference current, The design value is 0.1mA, and M<1> and M<2> are controlled by internal registers, so that the baseband processor can control the current value of the current source and current sink through the three-wire serial interface, thereby controlling the phase-locked loop frequency synthesizer loop characteristics. When the linearity of the voltage-controlled oscillator tuning curve is not good, adjusting the current value of the charge pump in this way can also play a role in nonlinear processing.

为了减少芯片面积,该频率合成器的环路滤波器实施例是由离片元件来实现的,如图7所示,包括电阻R1、R2和电容C1、C2和C3;其中,Ip(t)是从电荷泵来的电流,它的输入端接电阻R1和电阻R2的一端一极C2的一端,R1的另一端接C1的一端,C1和C2的另一端均接地,环路滤波器的输出控制压控振荡器的振荡频率,其输出接电阻R2的另一端和C3的一端,C3的另一端接地。环路滤波器和电荷泵组合,可以形成四阶二型(四个极点,其中两极点在零频率处)的环路滤波网络。In order to reduce the chip area, the embodiment of the loop filter of this frequency synthesizer is realized by off-chip components, as shown in Figure 7, including resistors R1, R2 and capacitors C1, C2 and C3; where, Ip (t ) is the current from the charge pump, its input terminal is connected to one end of resistor R1 and one end of resistor R2 and one end of C2, the other end of R1 is connected to one end of C1, the other ends of C1 and C2 are grounded, and the loop filter The output controls the oscillation frequency of the voltage-controlled oscillator, and its output is connected to the other end of the resistor R2 and one end of C3, and the other end of C3 is grounded. The combination of the loop filter and the charge pump can form a fourth-order type II (four poles, two of which are at zero frequency) loop filter network.

为了了解环路滤波网络对本发明的锁相环型频率合成器噪声和动态特性的影响,首先要推导出该频率合成器的开环电路增益。图8给出了本发明的锁相环型频率合成器的简单仿真模型。在图中,Kd是鉴相器的增益因子,对于所使用的鉴频鉴相器来说,其增益因子为

Figure C20031010341800111
IP为电荷泵的电流;Kv/s是压控振荡器的传输函数,Kv为压控振荡器的调谐系数(即振荡频率随压控端电压的变化率);1/N是分频器的传输函数。In order to understand the effect of the loop filter network on the noise and dynamic characteristics of the phase-locked loop frequency synthesizer of the present invention, the open-loop circuit gain of the frequency synthesizer must first be deduced. Fig. 8 shows a simple simulation model of the phase-locked loop frequency synthesizer of the present invention. In the figure, Kd is the gain factor of the phase detector, for the used frequency and phase detector, its gain factor is
Figure C20031010341800111
I P is the current of the charge pump; Kv/s is the transfer function of the voltage-controlled oscillator, and Kv is the tuning coefficient of the voltage-controlled oscillator (that is, the rate of change of the oscillation frequency with the voltage of the voltage-controlled terminal); 1/N is the frequency divider transfer function.

图8中还加入了电路中低频模块产生的噪声源。其中,dinp 2是电荷泵产生的噪声,它来源于电荷泵的非理想特性,如电流源和电流沉不匹配、开关操作引起的电荷注入等,这些会在输出端产生毛刺,而且电流源和电流沉不匹配的电荷泵会使电荷注入环路滤波器,并通过压控振荡器在输出端产生频率调制信号;diR1 2和diR2 2是环路滤波器中两个电阻产生的热噪声。The noise source generated by the low frequency module in the circuit is also added in Fig. 8. Among them, din p 2 is the noise generated by the charge pump, which comes from the non-ideal characteristics of the charge pump, such as current source and current sink mismatch, charge injection caused by switching operations, etc., which will generate glitches at the output, and the current source A charge pump that does not match the current sink will inject charge into the loop filter and generate a frequency modulated signal at the output through the voltage controlled oscillator; di R1 2 and di R2 2 are the heat generated by the two resistors in the loop filter noise.

在不考虑各种噪声源时,整个频率合成器的开环传输函数可以表示为:When various noise sources are not considered, the open-loop transfer function of the entire frequency synthesizer can be expressed as:

GG (( sthe s )) == Kdk &CenterDot;&Center Dot; II PP &CenterDot;&Center Dot; Hh (( sthe s )) &CenterDot;&Center Dot; KvKv NN &CenterDot;&Center Dot; sthe s == II PP 22 &pi;&pi; &CenterDot;&Center Dot; Hh (( sthe s )) &CenterDot;&Center Dot; KvKv NN &CenterDot;&Center Dot; sthe s -- -- -- (( 55 ))

其中,H(s)是环路滤波器的传输函数,可以表示为:Among them, H(s) is the transfer function of the loop filter, which can be expressed as:

Hh (( SS )) == ZZ LFLF (( sthe s )) &CenterDot;&CenterDot; 11 (( 11 ++ sthe s RR 22 CC 33 )) -- -- -- (( 66 ))

其中,ZLF(s)是离片的环路滤波器的阻抗,其值为:where Z LF (s) is the impedance of the off-chip loop filter, which is:

ZZ LFLF (( sthe s )) == (( 11 ++ sthe s &tau;&tau; 11 )) (( 11 ++ sthe s &tau;&tau; 22 )) sthe s [[ sthe s 22 CC 22 &tau;&tau; 11 &tau;&tau; 22 ++ sthe s (( CC 22 &tau;&tau; 11 ++ CC 22 &tau;&tau; 22 ++ CC 33 &tau;&tau; 11 ++ CC 11 &tau;&tau; 22 )) ++ CC 11 ++ CC 22 ++ CC 33 ]] -- -- -- (( 77 ))

其中,τ1=R1C1,τ2=R2C3Wherein, τ 1 =R 1 C 1 , τ 2 =R 2 C 3 .

将(6)和(7)代入(5),可得:Substituting (6) and (7) into (5), we can get:

GG (( sthe s )) == II PP 22 &pi;&pi; &CenterDot;&Center Dot; KvKv NN &CenterDot;&Center Dot; (( 11 ++ sthe s &tau;&tau; 11 )) sthe s 22 [[ sthe s 22 CC 22 &tau;&tau; 11 &tau;&tau; 22 ++ sthe s (( CC 22 &tau;&tau; 11 ++ CC 22 &tau;&tau; 22 ++ CC 33 &tau;&tau; 11 ++ CC 11 &tau;&tau; 22 )) ++ CC 11 ++ CC 22 ++ CC 33 ]] -- -- -- (( 88 ))

从(8)可以看出,该开环传输函数有一个零点和四个极点,其中两个极点处于零频率处。From (8), it can be seen that the open-loop transfer function has one zero and four poles, two of which are at zero frequency.

令|G(jωc)|=1,可以求得环路带宽ωc应该满足的条件:Let |G(jω c )|=1, the conditions that the loop bandwidth ω c should meet can be obtained:

II PP 22 &pi;&pi; &CenterDot;&CenterDot; KvKv NN &CenterDot;&CenterDot; 11 ++ (( &tau;&tau; 11 &omega;&omega; cc )) 22 (( AA &tau;&tau; 11 &omega;&omega; cc )) 22 ++ (( 11 -- BB (( &tau;&tau; 11 &omega;&omega; cc )) 22 )) 22 == CC 11 (( 11 ++ CC 22 CC 11 ++ CC 33 CC 11 )) &omega;&omega; cc 22 -- -- -- (( 99 ))

其中,in,

AA == CC 22 CC 11 ++ CC 33 CC 11 ++ &tau;&tau; 22 &tau;&tau; 11 (( 11 ++ CC 22 CC 11 )) 11 ++ CC 22 CC 11 ++ CC 33 CC 11 ,, BB == CC 22 CC 11 &tau;&tau; 22 &tau;&tau; 11 11 ++ CC 22 CC 11 ++ CC 33 CC 11 -- -- -- (( 1010 ))

从G(jωc)的幅角可以求得该频率合成器的相位裕度:The phase margin of the frequency synthesizer can be obtained from the argument of G(jω c ):

PMPM == tanthe tan -- 11 (( &tau;&tau; 11 &omega;&omega; cc )) -- tanthe tan -- 11 (( AA (( &tau;&tau; 11 &omega;&omega; cc )) 11 -- BB (( &tau;&tau; 11 &omega;&omega; cc )) 22 )) -- -- -- (( 1111 ))

式(11)对ωc取微分并令其等于0,可以求得达到最大的相位裕度时ωc应该满足的条件:Equation (11) takes the differential of ωc and makes it equal to 0, and the condition that ωc should satisfy when reaching the maximum phase margin can be obtained:

&omega;&omega; cc == 11 &tau;&tau; 11 11 22 (( 22 BB ++ ABAB ++ AA -- AA 22 BB (( BB -- AA )) ++ (( 22 BB ++ ABAB ++ AA -- AA 22 BB (( BB -- AA )) )) 22 -- 44 (( 11 -- AA )) BB (( BB -- AA )) )) -- -- -- (( 1212 ))

从(11)可以看出,该频率合成器的相位裕度与环路滤波器中各电阻、电容的绝对值无关,而仅是

Figure C20031010341800128
的函数。It can be seen from (11) that the phase margin of the frequency synthesizer has nothing to do with the absolute values of the resistors and capacitors in the loop filter, but only and
Figure C20031010341800128
The function.

为了保证环路的稳定性,一般要求相位裕度大于45度,即:In order to ensure the stability of the loop, it is generally required that the phase margin is greater than 45 degrees, namely:

                                           PM>45°                    (13)PM > 45° (13)

在实际设计中,环路带宽一般取为参考频率的十分之一左右,在此条件下,可以选择C1~C3和R1、R2的值,使得它们满足(9)~(13)的要求。公式(9)~(12)仅提供了三个限制条件,这样在选择

Figure C20031010341800129
以及C1和τ1的值时,有两个自由度,可以尽量增大环路滤波网络对各种噪声的抑制作用而不影响该频率合成器的相位裕度和环路带宽。In actual design, the loop bandwidth is generally taken as about one tenth of the reference frequency. Under this condition, the values of C1~C3 and R1, R2 can be selected so that they meet the requirements of (9)~(13). Formulas (9)~(12) only provide three constraints, so that when selecting
Figure C20031010341800129
and As well as the values of C 1 and τ 1 , there are two degrees of freedom, which can maximize the suppression effect of the loop filter network on various noises without affecting the phase margin and loop bandwidth of the frequency synthesizer.

假设电荷泵中的电流源和电流沉产生的噪声电流均为din 2,在锁相环锁定情况下,在每一次鉴相过程中,电流源和电流沉在一段短时间内同时工作,假设该时间段占的比例为αp,则电荷泵产生的噪声电流为:Assuming that the noise currents generated by the current source and the current sink in the charge pump are di n 2 , in the case of the phase-locked loop locking, in each phase detection process, the current source and the current sink work simultaneously for a short period of time, assuming The proportion of this time period is α p , then the noise current generated by the charge pump is:

                       dinp 2=2αp·din 2    (14)di np 2 =2α p di n 2 (14)

由图8可以推导出从该噪声源到频率合成器输出的传输函数:The transfer function from this noise source to the frequency synthesizer output can be derived from Figure 8:

&theta;&theta; outout didi npnp (( sthe s )) == ZZ LFLF (( sthe s )) &CenterDot;&Center Dot; 11 11 ++ sthe s RR 22 CC 33 &CenterDot;&Center Dot; KvKv sthe s ++ II PP 22 N&pi;N&pi; &CenterDot;&Center Dot; ZZ LFLF (( sthe s )) &CenterDot;&CenterDot; 11 11 ++ sthe s RR 22 CC 33 &CenterDot;&Center Dot; KvKv -- -- -- (( 1515 ))

对于带外相位噪声来说,当偏离频率远大于环路带宽ωc时,有:For out-of-band phase noise, when the deviation frequency is much larger than the loop bandwidth ω c , there are:

ZZ LFLF (( sthe s )) &CenterDot;&Center Dot; 11 11 ++ sthe s RR 22 CC 33 &ap;&ap; 11 sthe s 22 CC 22 &tau;&tau; 22 -- -- -- (( 1616 ))

将式(16)代入(15),可得:Substituting formula (16) into (15), we can get:

&theta;out&theta; out dinpdinp (( sthe s )) &ap;&ap; KvKv sthe s 33 CC 22 &tau;&tau; 22 -- -- -- (( 1717 ))

由公式(14)和(17)可得由于电荷泵引入的单边带相位噪声功率谱密度为:From formulas (14) and (17), the power spectral density of the SSB phase noise introduced by the charge pump can be obtained as:

&Gamma;&Gamma; PP {{ &Delta;&omega;&Delta;&omega; }} == &theta;&theta; outout 22 (( &Delta;&omega;&Delta;&omega; )) 22 == 11 22 &CenterDot;&CenterDot; (( KvKv &Delta;&omega;&Delta;&omega; 33 CC 22 &tau;&tau; 22 )) 22 &CenterDot;&Center Dot; 22 &alpha;&alpha; pp &CenterDot;&Center Dot; dd ii nno 22 -- -- -- (( 1818 ))

从公式(18)可以看出,要减小电荷泵引入的单边带相位噪声,电容C2以及τ2应取尽可能大的值。It can be seen from the formula (18) that to reduce the SSB phase noise introduced by the charge pump, the capacitor C2 and τ 2 should be as large as possible.

离片的环路滤波器中电阻R1和R2会产生热噪声 dv R 1,2 2 = 4 k TR 1,2 &CenterDot; df , 它们也会对相位噪声产生贡献。采用与电荷泵推导相似的方法,可以导出由于这两个电阻引入的单边带相位噪声功率谱密度分别为:Resistors R1 and R2 in the off-chip loop filter will generate thermal noise dv R 1,2 2 = 4 k TR 1,2 &CenterDot; df , They also contribute to phase noise. Using a method similar to the derivation of the charge pump, the power spectral densities of the SSB phase noise introduced by the two resistors can be derived as:

&Gamma;&Gamma; RR 22 {{ &Delta;&omega;&Delta;&omega; }} == 11 22 &CenterDot;&Center Dot; (( KvKv &Delta;&omega;&Delta;&omega; 33 CC 33 &tau;&tau; 22 )) 22 &CenterDot;&Center Dot; 44 kTkT RR 11 -- -- -- (( 1919 ))

&Gamma;&Gamma; RR 22 {{ &Delta;&omega;&Delta;&omega; }} == 11 22 &CenterDot;&Center Dot; (( KvKv &Delta;&omega;&Delta;&omega; 22 CC 33 )) 22 &CenterDot;&Center Dot; 44 kTkT RR 22 -- -- -- (( 2020 ))

从式(19)、(20)可以看出,为了减少环路滤波器中电阻Rl和R2引入的单边带相位噪声,Rl和R2应取尽可能大的值,并且电容C2和τ2也应取尽可能大的值。另外,(18)~(20)式表明,电荷泵和电阻R1引入的单边带相位噪声都与偏离频率Δω的六次方成反比,而电阻R2引入的单边带相位噪声则与偏离频率Δω的四次方成反比,这说明电阻R2会引入更大的相位噪声。It can be seen from equations (19) and (20) that in order to reduce the single-sideband phase noise introduced by resistors Rl and R2 in the loop filter, Rl and R2 should take as large a value as possible, and capacitors C2 and τ2 should also be Should take as large a value as possible. In addition, equations (18) to (20) show that the SSB phase noise introduced by the charge pump and resistor R1 is inversely proportional to the sixth power of the deviation frequency Δω, while the SSB phase noise introduced by the resistor R2 is proportional to the deviation frequency The fourth power of Δω is inversely proportional, which means that resistor R2 will introduce greater phase noise.

在实际可以得到的元件值受到限制的条件下,最后实现的环路滤波器中各元件的取值为:Under the condition that the actual available component values are limited, the value of each component in the final realized loop filter is:

R1=15KΩ,C1=200pF,C2=10pF,R2=2KΩ,C3=2pF,这时环路带宽约为100kHz,相位裕度约为51度。将各种参数代入(18)~(20)式,并且假设Kv=100MHz/V,T=300K,αp=0.1,则:R 1 =15KΩ, C 1 =200pF, C 2 =10pF, R 2 =2KΩ, C 3 =2pF, then the loop bandwidth is about 100kHz, and the phase margin is about 51 degrees. Substitute various parameters into formulas (18)~(20), and assume Kv=100MHz/V, T=300K, α p =0.1, then:

                    ΓP{3MHz}=-114.38dBc/HzΓ P {3MHz}=-114.38dBc/Hz

&Gamma; R 1 { 3 MHz } = - 115.17 dBc / Hz    (21) &Gamma; R 1 { 3 MHz } = - 115.17 dBc / Hz (twenty one)

&Gamma;&Gamma; RR 22 {{ 33 MHzMHz }} == -- 114.90114.90 dBcdBc // HzHz

本实施例的频率合成器可采用0.25um CMOS工艺实现,该工艺提供五层金属走线,其中,射频频率合成器的模拟部分占用的芯片面积约为0.7×1.5mm2,该芯片采用48管腿QFN(Quad Flat No-Lead)封装。The frequency synthesizer of this embodiment can be implemented using a 0.25um CMOS process, which provides five layers of metal wiring, wherein the chip area occupied by the analog part of the RF frequency synthesizer is about 0.7×1.5mm 2 , and the chip uses 48 tubes Leg QFN (Quad Flat No-Lead) package.

为了对该频率合成器进行测试,设计了-FPGA测试板,该射频频率合成器的测试板上共有三个SMA接头,分别接内部压控振荡器的输出端、双模预分频器的输出端和外部压控振荡器的输入端。该FPGA测试板所使用的可编程器件是Xilinx公司的SPANTAN XL芯片,正常工作电压为3.3V。该FPGA测试板通过三线串行接口控制频率合成器的工作模式以及输出频率。In order to test the frequency synthesizer, an FPGA test board is designed. There are three SMA connectors on the test board of the RF frequency synthesizer, which are respectively connected to the output of the internal voltage-controlled oscillator and the output of the dual-mode prescaler. terminal and the input terminal of the external voltage-controlled oscillator. The programmable device used in this FPGA test board is the SPANTAN XL chip of Xilinx Company, and the normal working voltage is 3.3V. The FPGA test board controls the working mode and output frequency of the frequency synthesizer through a three-wire serial interface.

本实施例使用11.0592MHz的晶体振荡器作为参考频率源,由于本实施例要得到大约1MHz的信道带宽,所以在内部对该频率源进行了11分频,实际的参考频率是1.0053818MHz。通过控制P计数器和S计数器的计数值,可以调节该频率合成器的输出频率。低频率的参考频率源会给射频频率合成器的输出频谱带来谐波,并增加振荡信号的相位噪声。当该频率合成器应用到实际系统中时,应该根据信道带宽的要求,选择尽可能高的实际参考频率(如在IEEE802.11b系统中,信道带宽为22MHz,实际参考频率应该设定为22MHz)。In this embodiment, a crystal oscillator of 11.0592 MHz is used as a reference frequency source. Since a channel bandwidth of about 1 MHz is to be obtained in this embodiment, the frequency source is internally divided by 11, and the actual reference frequency is 1.0053818 MHz. By controlling the count value of P counter and S counter, the output frequency of the frequency synthesizer can be adjusted. A low-frequency reference frequency source will introduce harmonics to the output spectrum of the RF frequency synthesizer and increase the phase noise of the oscillating signal. When the frequency synthesizer is applied to an actual system, the actual reference frequency should be selected as high as possible according to the channel bandwidth requirements (for example, in the IEEE802.11b system, the channel bandwidth is 22MHz, and the actual reference frequency should be set to 22MHz) .

内部压控振荡器的振荡频率可以在1.77GHz~2.00GHz范围内变化,但该频率合成器的锁定范围仅为1.82GHz~1.96GHz。图9给出了一种锁定状态下该频率合成器的输出频谱,这时输出频率为1924MHz,输出幅度可达-3.50dBm。从图中可以看出,该频率合成器的输出频谱中出现了很多谐波,这些谐波是由于参考频率的干扰引起的。能量最大的谐波出现在中心频率两侧11MHz处,该频率合成器对这两个谐波的抑制率仅为-20dBc。The oscillation frequency of the internal voltage-controlled oscillator can vary within the range of 1.77GHz to 2.00GHz, but the locking range of the frequency synthesizer is only 1.82GHz to 1.96GHz. Figure 9 shows the output spectrum of the frequency synthesizer in a locked state. At this time, the output frequency is 1924MHz, and the output amplitude can reach -3.50dBm. It can be seen from the figure that there are many harmonics in the output spectrum of the frequency synthesizer, which are caused by the interference of the reference frequency. The harmonics with the largest energy appear at 11MHz on both sides of the center frequency, and the frequency synthesizer's rejection rate for these two harmonics is only -20dBc.

图10给出了在这种锁定状态下,用示波器观测到的鉴频鉴相器两个输入端的波形。其中(a)图是压控振荡器输出信号分频后的波形,(b)图是晶体振荡器输出信号分频后的波形。它们的频率是相等的,说明整个频率合成器已经进入锁定状态。Figure 10 shows the waveforms at the two input terminals of the frequency and phase detector observed with an oscilloscope in this locked state. Among them, (a) is the waveform after frequency division of the voltage-controlled oscillator output signal, and (b) is the waveform of the crystal oscillator output signal after frequency division. Their frequencies are equal, indicating that the entire frequency synthesizer has entered a locked state.

该锁定状态下,当偏离中心频率的数值大于环路带宽(约100kHz)但小于3MHz时,频率合成器的相位噪声主要是由内部压控振荡器的1/f噪声上变频而产生的,处于ω-3区域,以30dB/dec的速率下降,在偏离中心频率3MHz处的相位噪声达到-100.83dBc/Hz。在该频率以外,该频率合成器的相位噪声进入ω-2区域,以20dB/dec的速率下降,这时噪声主要来源于内部压控振荡器各元件的热噪声,采用外插法,可以推导出在偏离中心频率25MHz处的相位噪声约为-119.25dBc/Hz,这已经可以满足IEEE802.11b对频率合成器相位噪声的要求(在离中心频率25MHz处的相位噪声性能应优于-118.4dBc/Hz)。当偏离频率位于环路带宽以内时,该频率合成器的相位噪声主要来源于参考频率源和内部压控振荡器,在偏离中心频率30kHz处,相位噪声达到最大值,约为-57dBc/Hz。In this locked state, when the deviation from the center frequency is greater than the loop bandwidth (about 100kHz) but less than 3MHz, the phase noise of the frequency synthesizer is mainly generated by the 1/f noise up-conversion of the internal voltage-controlled oscillator. In the ω -3 region, the phase noise at 3MHz away from the center frequency reaches -100.83dBc/Hz at a rate of 30dB/dec. Outside this frequency, the phase noise of the frequency synthesizer enters the ω -2 region and drops at a rate of 20dB/dec. At this time, the noise mainly comes from the thermal noise of the components of the internal voltage-controlled oscillator. Using extrapolation, it can be deduced that The phase noise at 25MHz away from the center frequency is about -119.25dBc/Hz, which can already meet the requirements of IEEE802.11b for the phase noise of the frequency synthesizer (the phase noise performance at 25MHz away from the center frequency should be better than -118.4dBc /Hz). When the offset frequency is within the loop bandwidth, the phase noise of the frequency synthesizer mainly comes from the reference frequency source and the internal voltage-controlled oscillator. At 30kHz from the center frequency, the phase noise reaches the maximum value, about -57dBc/Hz.

除了参考频率源和内部压控振荡器的噪声在环路带宽内外分别起主要作用外,电荷泵、环路滤波器的电阻R1和R2,以及数字电路都会对降低频率合成器的相位噪声产生重要影响。另外,测试中所使用的设备也会引入很多的噪声,所有的这些因素都限制了频率合成器的相位噪声性能。In addition to the noise of the reference frequency source and the internal voltage-controlled oscillator, which play a major role in and outside the loop bandwidth, the charge pump, the resistors R1 and R2 of the loop filter, and the digital circuit all play an important role in reducing the phase noise of the frequency synthesizer. Influence. In addition, the equipment used in the test will also introduce a lot of noise, all of which limit the phase noise performance of the frequency synthesizer.

当本发明的频率合成器的数字电路部分采用2.5V电源,模拟部分采用2.7V电源,该频率合成器的模拟部分消耗的总电流约为48mA。各个模块所消耗的电流分别为:内部压控振荡器约3.2mA;两个内部压控振荡器的输出缓冲电路约16mA;内部压控振荡器和双模预分频器的接口电路约10.5mA;双模预分频器约15.7mA;鉴频鉴相器和电荷泵约2.5mA;恒跨导源约0.1mA。When the digital circuit part of the frequency synthesizer of the present invention uses a 2.5V power supply and the analog part uses a 2.7V power supply, the total current consumed by the analog part of the frequency synthesizer is about 48mA. The current consumed by each module is: the internal voltage-controlled oscillator is about 3.2mA; the output buffer circuit of the two internal voltage-controlled oscillators is about 16mA; the interface circuit of the internal voltage-controlled oscillator and the dual-mode prescaler is about 10.5mA ; The dual-mode prescaler is about 15.7mA; the frequency and phase detector and the charge pump are about 2.5mA; the constant transconductance source is about 0.1mA.

从以上测试结果可以看出,本发明所提出的集成锁相环型频率合成器可以实现频率合成的功能,并具有很高的性能,可以应用于无线通信领域。It can be seen from the above test results that the integrated phase-locked loop frequency synthesizer proposed by the present invention can realize the function of frequency synthesis, and has high performance, and can be applied in the field of wireless communication.

Claims (3)

1、一种集成射频锁相环型频率合成器,其特征在于,由采用CMOS工艺集成在一个芯片上的数字单元部件,模拟单元部件和由离片元件实现的环路滤波器组成,其中,该数字单元部件包括;R可编程计数器、P可编程计数器、S可编程计数器、三线串行接口电路、移位寄存器和功耗控制器;该模拟单元包括:鉴频鉴相器、双模预分频器、压控振荡器、电荷泵和恒跨导源;该频率合成器各器件的连接关系为:所说的压控振荡器的输出端与双模预分频器的输入端相连,该双模预分频器的输出端分别与编程P计数器和可编程S计数器输入端相连,该S计数器的输出端与该双模预分频器输入相连,该P计数器的输出端分别与S计数器的输入端及鉴频鉴相器的输入端相连,可编程的R计数器的输入接收参考频率源输入的晶振信号,该可编程的R计数器的输出端与鉴频鉴相器的输入端相连,该鉴频鉴相器的输出端与电荷泵的输入端相连,电荷泵的输出端经环路滤波器与所说的压控振荡器输入端相连;所说的移位寄存器与三线串行接口相连,用于控制R、S和P三个计数器的分频比外及控制整个频率合成器的工作模式;所说的功耗管理模块给各个子模块提供使能信号,而恒跨导源给各模拟单元部件提供偏置,最后所需要的信号由压控振荡器的输出得到。1, an integrated radio frequency phase-locked loop type frequency synthesizer, it is characterized in that, by adopting CMOS technology to be integrated on the digital unit part on a chip, analog unit part and the loop filter realized by off-chip components, wherein, The digital unit components include; R programmable counter, P programmable counter, S programmable counter, three-wire serial interface circuit, shift register and power consumption controller; the analog unit includes: frequency and phase detector, dual-mode pre- Frequency divider, voltage-controlled oscillator, charge pump and constant transconductance source; the connection relationship of each device of this frequency synthesizer is: the output end of said voltage-controlled oscillator is connected with the input end of dual-mode prescaler, the The output terminal of the dual-mode prescaler is connected with the input terminal of the programming P counter and the programmable S counter respectively, the output terminal of the S counter is connected with the input terminal of the dual-mode prescaler, and the output terminal of the P counter is respectively connected with the S counter The input terminal of the programmable R counter is connected to the input terminal of the frequency and phase detector, and the input of the programmable R counter receives the crystal oscillator signal input by the reference frequency source, and the output terminal of the programmable R counter is connected to the input terminal of the frequency and phase detector. The output end of the frequency and phase detector is connected to the input end of the charge pump, and the output end of the charge pump is connected to the input end of the voltage-controlled oscillator through a loop filter; the shift register is connected to the three-wire serial interface It is used to control the frequency division ratio of the three counters R, S and P and to control the working mode of the entire frequency synthesizer; the power management module provides enable signals for each sub-module, and the constant transconductance source provides each The analog unit part provides the bias, and finally the required signal is obtained from the output of the voltage controlled oscillator. 2、如权利要求1所述的集成射频锁相环型频率合成器,其特征在于,还包括一个离片的压控振荡器及内/外部压控振荡器模式的选择电路;该选择电路由晶体管MS1-MS16、隔直电容CS3、CS4、电阻RS5、RS6和电感LS1构成;各器件的连接关系为:从内部压控振荡器来的信号INT_VCO输入晶体管MS1的栅极,MS1的源极接地,漏极接负载电阻RS5和隔直电容CS3的一极;晶体管MS5的栅极接到功耗控制信号EN1B,源极接电源VDD,漏极接晶体管MS6的源极,晶体管MS6的栅极和电容CS3的另一端,晶体管MS6的漏极,MS7的漏极,MS7的栅极,MS10的栅极,CS4的一端相连;MS7的源极接MS8的漏极,MS8的栅极接功耗控制信号EN1和MS9的栅极,MS8的源极接地;MS9的漏极接MS10的源极,MS9的源极接地,MS10的漏极接片上电感LS1的一端和输出到双模预分频器的接口Fdmp,晶体管MS13的源极接地,漏极接其栅极,MS11的栅极和MS14的源极相连,MS14的漏极接MS14栅极,MS12的栅极和MS15的漏极相连,MS15的栅极接偏置信号VP2,其源极接MS16的漏极,MS16的栅极接控制信号ENP,其源极接电源VDD,MS11的漏极接外部压控振荡信号EXT_VCO和MS12的源极,MS11的源极接地,MS12的漏极接RS6的一端和CS4的一端,RS6的另一端接VDD。2. The integrated RF phase-locked loop frequency synthesizer as claimed in claim 1, further comprising a selection circuit of an off-chip voltage-controlled oscillator and internal/external voltage-controlled oscillator mode; the selection circuit consists of Transistors MS1-MS16, DC blocking capacitors CS3, CS4, resistors RS5, RS6 and inductor LS1 are composed; the connection relationship of each device is: the signal INT_VCO from the internal voltage-controlled oscillator is input to the gate of transistor MS1, and the source of MS1 is grounded , the drain is connected to the load resistor RS5 and one pole of the DC blocking capacitor CS3; the gate of the transistor MS5 is connected to the power consumption control signal EN1B, the source is connected to the power supply VDD, the drain is connected to the source of the transistor MS6, the gate of the transistor MS6 and The other end of capacitor CS3 is connected to the drain of transistor MS6, the drain of MS7, the gate of MS7, the gate of MS10, and one end of CS4; the source of MS7 is connected to the drain of MS8, and the gate of MS8 is connected to the power consumption control The gates of signals EN1 and MS9, the source of MS8 are grounded; the drain of MS9 is connected to the source of MS10, the source of MS9 is grounded, one end of the inductor LS1 on the drain of MS10 and the output to the dual-mode prescaler Interface Fdmp, the source of transistor MS13 is grounded, the drain is connected to its gate, the gate of MS11 is connected to the source of MS14, the drain of MS14 is connected to the gate of MS14, the gate of MS12 is connected to the drain of MS15, and the gate of MS15 is connected The gate is connected to the bias signal VP2, its source is connected to the drain of MS16, the gate of MS16 is connected to the control signal ENP, its source is connected to the power supply VDD, the drain of MS11 is connected to the external voltage-controlled oscillation signal EXT_VCO and the source of MS12, The source of MS11 is grounded, the drain of MS12 is connected to one end of RS6 and one end of CS4, and the other end of RS6 is connected to VDD. 3、如权利要求1所述的集成射频锁相环型频率合成器,其特征在于,所说的双模预分频器由同步4分频/5分频的分频器、异步计数器和控制逻辑器组成;其中,压控振荡信号分别接到两个或非门触发器和D触发器的CLK输入端,D触发器的Q+输出端接到第一或非门触发器的D1输入端,其Q-输出端接到第二或非门触发器的D1输入端;第一或非门触发器的D2输入端接到第二或非门触发器的Q+输出端,其Q+输出端接到D触发器的D输入端和异步计数器的输入端,第二或非门触发器的D2输入端接控制逻辑器的输出,第一和第二或非门触发器的的输出端Q-都悬空,控制逻辑器的输入由异步计数器提供,异步计数器同时提供分频信号。3. The integrated radio frequency phase-locked loop frequency synthesizer as claimed in claim 1, wherein said dual-mode prescaler is controlled by a synchronous 4-frequency divider/5-frequency divider, an asynchronous counter and The logic circuit is composed; wherein, the voltage-controlled oscillating signal is respectively connected to the CLK input terminals of the two NOR triggers and the D flip-flop, and the Q+ output terminal of the D flip-flop is connected to the D1 input terminal of the first NOR trigger, Its Q- output terminal is connected to the D1 input terminal of the second NOR gate trigger; the D2 input terminal of the first NOR gate trigger is connected to the Q+ output terminal of the second NOR gate trigger, and its Q+ output terminal is connected to The D input terminal of the D flip-flop and the input terminal of the asynchronous counter, the D2 input terminal of the second NOR gate trigger is connected to the output of the control logic, and the output terminals Q- of the first and second NOR gate triggers are all suspended , the input of the control logic is provided by the asynchronous counter, and the asynchronous counter provides the frequency division signal at the same time.
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Publication number Priority date Publication date Assignee Title
US7365608B2 (en) * 2004-12-10 2008-04-29 Analog Devices, Inc. Digital frequency synthesiser and a method for producing a frequency sweep
CN101072029B (en) * 2006-05-12 2011-04-13 豪威国际控股有限公司 Multiple precision clock generating circuit on single chip and its realizing method
CN101098142B (en) * 2007-06-14 2011-05-04 复旦大学 Frequency synthesizer of multi-sideband OFDM ultra-broadband system radio frequency transceiver
CN101087141B (en) * 2007-07-10 2010-05-19 中国人民解放军国防科学技术大学 N times frequency division circuit with adjustable duty cycle in pulse synthesis mode
DE602007008594D1 (en) * 2007-12-11 2010-09-30 Swatch Group Res & Dev Ltd Counter distributor circuit with dual mode for high frequency operation
CN101471909B (en) * 2007-12-26 2010-12-15 中国科学院微电子研究所 Six-band frequency synthesizer for OFDM UWB
US8461885B2 (en) * 2011-06-08 2013-06-11 Analog Devices, Inc. Hybrid digital-analog phase locked loops
CN103187970B (en) * 2011-12-29 2017-12-01 国民技术股份有限公司 Circuit and its lookup method are searched in a kind of automatic frequency control
CN104811147A (en) * 2015-04-22 2015-07-29 吉林大学 Optimizing Circuit of Analog Conditioning Unit of Downhole Microseismic Data Acquisition System
JP2018528635A (en) * 2015-06-26 2018-09-27 オリンパス株式会社 Offset phase lock loop transmitter adjusted
US10461742B2 (en) * 2016-09-01 2019-10-29 Novatek Microelectronics Corp. Chip, selectable mode buffer circuit and mode selecting method thereof
CN109302179B (en) * 2018-09-03 2022-04-19 重庆西南集成电路设计有限责任公司 Dual mode charge pump circuit and mode selection circuit and sampling logic tolerance circuit
CN110581709B (en) 2019-08-30 2021-01-12 浙江大学 A Zero-Delay Phase-Locked Loop Frequency Synthesizer Based on Multilevel Synchronization
CN111586969B (en) * 2020-04-28 2021-12-21 中国科学院计算技术研究所 Circuit wiring method, DDR4 memory circuit, and electronic equipment
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