CN120018651B - High-color-gamut white light LED light source module - Google Patents
High-color-gamut white light LED light source moduleInfo
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- CN120018651B CN120018651B CN202510494982.2A CN202510494982A CN120018651B CN 120018651 B CN120018651 B CN 120018651B CN 202510494982 A CN202510494982 A CN 202510494982A CN 120018651 B CN120018651 B CN 120018651B
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Abstract
本发明实施例公开了一种高色域的白光LED光源模组，涉及半导体发光领域，该高色域的白光LED光源模组包括LED晶片以及发光件；所述LED晶片发射的混合光谱为青光，所述青光的峰值波长范围为440‑560nm；青光光谱包含有蓝光光谱和绿光光谱，所述蓝光光谱的峰值波长范围为440‑480nm，所述绿光光谱的峰值波长范围为500‑560nm；所述发光件发射的混合光谱为红光或黄绿光，峰值波长的范围为520‑650nm；LED晶片包括第一量子阱层以及第二量子阱层，所述第一量子阱层的峰值波长与所述第二量子阱层的峰值波长的差值大于60nm；所述第一量子阱层为电致发光，所述第二量子阱层为光致发光；所述发光件为光致发光。该高色域的白光LED光源模组同时具备高色域、低成本、高可靠性和色彩高稳定性。
The embodiment of the present invention discloses a white light LED light source module with high color gamut, which relates to the field of semiconductor light emitting. The white light LED light source module with high color gamut includes an LED chip and a light emitting component; the mixed spectrum emitted by the LED chip is cyan light, and the peak wavelength range of the cyan light is 440-560nm; the cyan light spectrum includes a blue light spectrum and a green light spectrum, the peak wavelength range of the blue light spectrum is 440-480nm, and the peak wavelength range of the green light spectrum is 500-560nm; the mixed spectrum emitted by the light emitting component is red light or yellow-green light, and the peak wavelength range is 520-650nm; the LED chip includes a first quantum well layer and a second quantum well layer, and the difference between the peak wavelength of the first quantum well layer and the peak wavelength of the second quantum well layer is greater than 60nm; the first quantum well layer is electroluminescence, and the second quantum well layer is photoluminescence; the light emitting component is photoluminescence. The white light LED light source module with high color gamut has high color gamut, low cost, high reliability and high color stability.
Description
Technical Field
The invention relates to the field of semiconductor light emission, in particular to a white light LED light source module with a high color gamut.
Background
The color gamut is an indicator of how much the display can truly restore colors, the wider the color gamut, the more abundant the color appearance.
There are two main technical routes currently available, that is, the color gamut is improved by the panel technology and the backlight technology. The technical route for improving the color gamut by the backlight technology mainly comprises the following three schemes:
1. Blue LED light source + quantum film, for example, the invention patent quantum dot film of patent application number CN 201480005245.1;
2. white light LED + quantum dot diffusion plate, for example, patent application number CN 202110840289.8' a quantum dot diffusion plate and its preparation method;
3. the RGB Mini-LED is used as a backlight source, for example, the invention patent with the patent application number of CN202111382153.3 is a RGB Mini-LED field sequential backlight control system and a method.
The three schemes cannot be simultaneously considered in core indexes such as high color gamut, low cost, high reliability, color stability and the like.
Disclosure of Invention
The technical problem to be solved by the embodiment of the invention is that the display has limitation on color gamut expression, and the high color gamut, low cost, high reliability and color stability cannot be considered.
In order to solve the problems, the embodiment of the invention discloses a white light LED light source module with high color gamut. The high-color-gamut white light LED light source module has the advantages of high color gamut, low cost, high reliability and high color stability.
The invention provides a high-color-gamut white light LED light source module which comprises an LED wafer and a light emitting piece, wherein a mixed spectrum emitted by the LED wafer is blue light, the peak wavelength range of the blue light is 440-560nm, the blue light spectrum comprises blue light spectrum and green light spectrum, the peak wavelength range of the blue light spectrum is 440-480nm, the peak wavelength range of the green light spectrum is 500-560nm, the mixed spectrum emitted by the light emitting piece is red light or yellow-green light, the peak wavelength range of the light emitting piece is 520-650nm, the LED wafer comprises a first quantum well layer and a second quantum well layer, the difference value between the peak wavelength of the first quantum well layer and the peak wavelength of the second quantum well layer is larger than 60nm, the first quantum well layer is electroluminescence, the second quantum well layer is photoluminescence, and the light emitting piece is photoluminescence.
The further technical scheme is that the range of the CIE-1931 chromaticity coordinate X value of the mixed spectrum emitted by the LED wafer is 0.1-0.2, and the range of the CIE-1931 chromaticity coordinate Y value of the mixed spectrum emitted by the LED wafer is 0.15-0.3.
The further technical scheme is that the spectrum emitted by the first quantum well layer is blue light, the peak wavelength range is 400nm-480nm, the half-wave width of the wavelength in the spectrum range is equal to or smaller than 40nm, the range of the CIE-1931 chromaticity coordinate X value is 0.1-0.2, and the range of the CIE-1931 chromaticity coordinate Y value is 0.01-0.15.
The further technical scheme is that the spectrum emitted by the second quantum well layer is green light, the peak wavelength range is 500-560 nm, the half-wave width of the wavelength in the spectrum range is equal to or smaller than 40nm, the range of the CIE-1931 chromaticity coordinate X value is 0.15-0.3, and the range of the CIE-1931 chromaticity coordinate Y value is 0.6-0.8.
The light-emitting piece comprises red powder and a transparent adhesive, wherein the red powder is photoluminescence, the refractive index of the transparent adhesive ranges from 1.3 to 1.8, and the peak value of the red light-emitting intensity of the red powder is larger than or equal to the peak value of the green light-emitting intensity of the LED wafer.
The further technical scheme is that the peak wavelength range of the red powder is 600nm-660nm, and the half-wave width of the wavelength in the spectrum range is equal to or less than 70nm.
The further technical scheme is that the luminous piece further comprises green powder, and the green powder is photoluminescent.
The further technical scheme is that the peak wavelength range of the green powder is 500nm-560nm, and the half-wave width of the wavelength in the spectrum range is equal to or less than 70nm.
The light-emitting element is arranged above the first quantum well layer, the second quantum well layer is arranged below the first quantum well layer, and the light-emitting intensity peak value of the first quantum well layer is larger than that of the second quantum well layer.
Compared with the prior art, the technical effects achieved by the embodiment of the invention include:
The light-emitting layer of the high-color-gamut white light LED light source module only needs two quantum well layers, is low in cost, and has high reliability due to the fact that only one quantum well layer is used for electroluminescence.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a high color gamut LED light source module according to the present application;
fig. 2 is a schematic structural diagram of an LED chip according to the present application.
Reference numerals
1. LED wafer, 2, luminous piece;
11. 12, the second quantum well layer;
21. red powder, 22, green powder.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, in which like reference numerals represent like components. It will be apparent that the embodiments described below are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be understood that the terms "comprises" and "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the embodiments of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of embodiments of the invention. As used in the specification of the embodiments of the invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
In order to facilitate understanding of the technical scheme provided by the application, a simple description is given below of the research background of the technical scheme of the application. The LED chip 1 includes a substrate (also called a base layer or a substrate), an n-type semiconductor layer, an active layer (also called a light emitting layer), and a p-type semiconductor layer. The optical three primary colors (RGB) are red, green and blue. After the optical three primary colors are mixed, the display screen is composed to display the colors, the three primary colors are added to be white at the same time, and the white belongs to one of the non-color systems (black and white gray).
Referring to fig. 1-2, the embodiment of the invention provides a white light LED light source module with high color gamut. The high-color-gamut white light LED light source module comprises an LED wafer 1 and a light emitting piece 2, wherein a mixed spectrum emitted by the LED wafer 1 is green light, the peak wavelength range of the green light is 440-560nm, the green light spectrum comprises a blue light spectrum and a green light spectrum, the peak wavelength range of the blue light spectrum is 440-480nm, the peak wavelength range of the green light spectrum is 500-560nm, the mixed spectrum emitted by the light emitting piece 2 is red light or yellow-green light, the peak wavelength range is 520-650nm, the LED wafer 1 comprises a first quantum well layer 11 and a second quantum well layer 12, the difference value between the peak wavelength of the first quantum well layer 11 and the peak wavelength of the second quantum well layer 12 is larger than 60nm, the first quantum well layer 11 is electroluminescence, the second quantum well layer 12 is photoluminescence, and the light emitting piece 2 is photoluminescence. The specific description of each component is as follows:
In this embodiment, the first quantum well layer 11 and the second quantum well layer 12 belong to the active layers of the LED chip 1, the first quantum well layer 11 and the second quantum well layer 12 are stacked, the first quantum well layer 11 is above the second quantum well layer 12, or the first quantum well layer 11 is below the second quantum well layer 12, and it is understood that the sequence positions or the upper and lower positions of the first quantum well layer 11 and the second quantum well layer 12 are not limited. The LED chip 1 structure includes a front-loading structure, a flip-chip structure, a vertical structure, and other structures extending based on the above structures, such as a thin film chip. The LED side length dimension is between 5-3000 microns. The LED wafer 1 can emit spectrums of two colors simultaneously after being electrified without being excited by fluorescent powder, and mixed light is green light, wherein the first color is blue light, and the second color is green light. The light emitting member 2 is excited by the light emitted from the LED chip 1 to emit red light, thereby obtaining white light in which blue light, green light, and red light are mixed.
In one embodiment, the blue light spectrum of the LED chip 1 has a peak wavelength range of 440-480nm, the green light spectrum of the LED chip 1 has a peak wavelength range of 500-560nm, and the blue light spectrum and the green light spectrum of the LED chip 1 are combined to obtain a green light spectrum, and the peak wavelength range of the green light spectrum is 440-560nm. The peak wavelength of the blue light spectrum is separated from the peak wavelength of the green light spectrum by more than 60nm. Blue light and green light are mixed to obtain cyan light. The first quantum well layer 11 includes a nitrogen compound semiconductor represented by the chemical formula In iGajAlk N, wherein 0≤i, 0≤j, 0≤k, and i+j+k=1. The second quantum well layer 12 of the LED chip 1 is a compound semiconductor composed of nitride or phosphide.
The technical effects achieved by the embodiment of the invention include:
The light-emitting layer of the high-color-gamut white light LED light source module only needs two quantum well layers, has low cost, only one quantum well layer is electroluminescent, has no obvious color drift phenomenon, and has high color consistency.
With continued reference to fig. 1-2, in this embodiment, the range of CIE-1931 chromaticity coordinate X values of the mixed spectrum emitted by the LED chip 1 is 0.1-0.2, and the range of CIE-1931 chromaticity coordinate Y values of the mixed spectrum emitted by the LED chip 1 is 0.15-0.3.
In this embodiment, the light emission spectrum of the LED chip 1 is green light, and the range of the CIE-1931 chromaticity coordinate X value is 0.13-0.18, and the CIE-1931 chromaticity coordinate Y value is 0.15-0.25.
Further, the spectrum emitted by the first quantum well layer 11 is blue light, the peak wavelength ranges from 400nm to 480nm, the half-wave width of the wavelength in the spectrum ranges from 40nm or less, the range of the cie-1931 chromaticity coordinate X value ranges from 0.1 to 0.2, and the range of the cie-1931 chromaticity coordinate Y value ranges from 0.01 to 0.15.
Further, the second quantum well layer 12 emits green light, the peak wavelength ranges from 500nm to 560nm, the half-wave width of the wavelength in the spectrum ranges from 40nm or less, the range of the cie-1931 chromaticity coordinate X value ranges from 0.15 to 0.3, and the range of the cie-1931 chromaticity coordinate Y value ranges from 0.6 to 0.8.
Further, the light emitting member 2 includes a red powder 21 and a transparent adhesive, the red powder 21 is photoluminescent, the refractive index of the transparent adhesive ranges from 1.3 to 1.8, and the peak value of the red light emission intensity of the red powder 21 is greater than or equal to the peak value of the green light emission intensity of the LED chip 1.
Specifically, the red powder 21 contains one or more of a red quantum dot phosphor and a red base powder. The red powder 21 is excited by the LED light source, the emission peak wavelength after excitation is between 600 and 660nm, and the half-width wavelength of the emission spectrum is not more than 70nm. Transparent adhesives include, but are not limited to, silicone gums (based on silicone polymers), resinous glues (such as acrylic resins, polyurethane resins, etc.), epoxy gums (based on epoxy resin systems), and transparent adhesives having refractive indices in the range of 1.3-1.8.
In this embodiment, the light emitting member 2 is formed by uniformly mixing the red powder 21 with the transparent adhesive, the peak value of the red light emission intensity excited by the red powder 21 is denoted as E Red colour , and the peak value of the green light emission intensity emitted by the LED chip 1 is denoted as E Green, green , and understandably, E Red colour ≥E Green, green .
The red base powder comprises, but is not limited to, nitride fluorescent powder （BaSi2O2N2、α-Sialon、β-Sialon、Sr2Si5N8、CaAlSiN3）、 fluoride fluorescent powder （K2SiF6:Mn4+、K2GeF6:Mn4+、K2TiF6:Mn4+）., consists of one or more materials, has a particle diameter ranging from 1 to 50 microns, is photoluminescent, is excited by an LED light source, and has an emission peak wavelength of 600-660nm after excitation.
Red quantum dot phosphors include, but are not limited to, cadmium selenide (CdSe), indium phosphide (InP), perovskite (ABX 3). The red quantum dot fluorescent powder consists of one or more materials, the particle diameter range is 10-30 nanometers, photoluminescence is realized, the red quantum dot fluorescent powder is excited by an LED light source, the emission peak wavelength after excitation is between 600 and 660nm, and the half-width wavelength of the emission spectrum is not more than 50nm.
Further, the peak wavelength of the red powder 21 is in the range of 600nm to 660nm, and the half-wave width of the wavelength in the spectrum range is equal to or less than 70nm.
Specifically, the red powder 21 is excited by the LED light source, the emission peak wavelength after excitation is 600-660nm, and the half-width wavelength of the emission spectrum is not more than 70nm. In one embodiment, the peak intensity of the red light emitted from the red powder 21 is greater than or equal to the peak intensity of the green light emitted from the LED chip 1.
Further, the light emitting member 2 further includes a green powder 22, and the green powder 22 is photoluminescent.
Specifically, the green powder 22 includes one or more of green base powder and green quantum dot phosphor. The green powder 22 is excited by the LED light source, the emission peak wavelength after excitation is between 500 and 560nm, and the half-width wavelength of the emission spectrum is not more than 70nm.
In this embodiment, the peak value of the red light emission intensity of the red powder 21 is greater than or equal to the sum of the peak values of the green light emission intensity of the LED chip 1 and the green powder 22, the sum of the peak values of the green light emission intensity of the LED chip 1 and the green powder 22 is less than or equal to the peak value of the blue light emission intensity of the LED chip 1, the luminescent member 2 is formed by uniformly mixing the red powder 21, the green powder 22 and the transparent adhesive, the luminescent member 2 emits yellow-green light, the peak value of the red light emission intensity excited by the red powder 21 is denoted as E Red colour , the sum of the peak values of the green light emission intensity emitted by the LED chip 1 and the green powder 22 is denoted as E Total green , the peak value of the blue light emission intensity of the LED chip 1 is denoted as E Blue light , and the peak value of the blue light emission intensity of the LED chip 1 is denoted as E Red colour ≥E Total green ,E Blue light ≥E Total green .
Green base powders include, but are not limited to SiAlON ceramic phosphors (β -SiAlON), silicate phosphors (Ba 2SiO4、Sr3SiO5), aluminate phosphors (YAG, (Gd, Y) AG, (Lu, Y) AG). The green base powder is composed of one or more materials, the particle diameter is 1-50 microns, photoluminescence is realized, the green base powder is excited by an LED light source, and the emission peak wavelength after excitation is between 500 and 560 nm.
Further, the peak wavelength of the green powder 22 is in the range of 500nm to 560nm, and the half-wave width of the wavelength in the spectral range is 70nm or less.
Specifically, the green powder 22 is excited by the light emitted from the LED chip 1, the emission peak wavelength after excitation is between 500 nm and 560nm, and the half-width wavelength of the emission spectrum is not more than 70nm.
Further, the light emitting element 2 is above the first quantum well layer 11, and the second quantum well layer 12 is below the first quantum well layer 11.
In this embodiment, the peak value of the blue light emitted by the first quantum well layer 11 is 2-5 times that of the green light emitted by the second quantum well layer 12, the light emitting element 2 is above the first quantum well layer 11, the second quantum well layer 12 is below the first quantum well layer 11, the light emitting element 2 and the second quantum well layer 12 are both photoluminescent, and the first quantum well layer 11 with a stronger light emitting intensity peak value is arranged between the light emitting element 2 and the second quantum well layer 12 with a weaker light emitting intensity peak value, so that the first quantum well layer 11 can effectively excite the light emitting element 2 and the second quantum well layer 12 to emit light respectively.
In the foregoing embodiments, the descriptions of the embodiments are focused on, and for those portions of one embodiment that are not described in detail, reference may be made to the related descriptions of other embodiments.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, connected, detachably connected, or integrally formed, mechanically connected, electrically connected, directly connected, indirectly connected via an intervening medium, or in communication between two elements or in an interaction relationship between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms should not be understood as necessarily being directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, one skilled in the art can combine and combine the different embodiments or examples described in this specification.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
While the invention has been described with reference to certain preferred embodiments, it will be understood by those skilled in the art that various changes and substitutions of equivalents may be made and equivalents will be apparent to those skilled in the art without departing from the scope of the invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (8)
1. The white light LED light source module with the high color gamut is characterized by comprising an LED wafer and a luminous piece;
the mixed spectrum emitted by the LED wafer is green light, the peak wavelength range of the green light is 440-560nm, the green light spectrum comprises a blue light spectrum and a green light spectrum, the peak wavelength range of the blue light spectrum is 440-480nm, and the peak wavelength range of the green light spectrum is 500-560nm;
the mixed spectrum emitted by the luminous element is red light or yellow-green light, and the peak wavelength range is 520-650nm;
The LED wafer comprises a first quantum well layer and a second quantum well layer, wherein the difference value between the peak wavelength of the first quantum well layer and the peak wavelength of the second quantum well layer is larger than 60nm;
the first quantum well layer is electroluminescence, the second quantum well layer is photoluminescence, and the luminescent element is photoluminescence;
The light emitting piece is arranged above the first quantum well layer, the second quantum well layer is arranged below the first quantum well layer, and the light emitting intensity peak value of the first quantum well layer is larger than the light emitting intensity peak value of the second quantum well layer;
The peak value of the red light emission intensity of the light emitting piece is larger than or equal to the sum of the peak values of the green light emission intensity of the light emitting piece and the second quantum well layer.
2. The high color gamut white LED light source module of claim 1, wherein the range of CIE-1931 chromaticity coordinate X values of the mixed spectrum emitted by the LED die is 0.1-0.2, and the range of CIE-1931 chromaticity coordinate Y values of the mixed spectrum emitted by the LED die is 0.15-0.3.
3. The high-color-gamut white-light LED light source module of claim 2, wherein the spectrum emitted by the first quantum well layer is blue light, the peak wavelength ranges from 400nm to 480nm, the half-wave width of the wavelength in the spectrum ranges from 40nm or less, the range of cie-1931 chromaticity coordinate X values ranges from 0.1 to 0.2, and the range of cie-1931 chromaticity coordinate Y values ranges from 0.01 to 0.15.
4. The high-color-gamut white-light LED light source module of claim 2, wherein the second quantum well layer emits green light in a peak wavelength range of 500nm to 560nm, a half-wavelength width of the wavelength in the spectrum range is equal to or less than 40nm, a cie-1931 chromaticity coordinate X value range of 0.15 to 0.3, and a cie-1931 chromaticity coordinate Y value range of 0.6 to 0.8.
5. The high-color-gamut white-light LED light source module of claim 2, wherein the luminescent member comprises a red powder and a transparent adhesive, the red powder is photoluminescent, and the transparent adhesive has a refractive index in the range of 1.3-1.8.
6. The high-color-gamut white-light LED light source module of claim 5, wherein the peak wavelength of the red powder ranges from 600nm to 660nm, and the half-wavelength width of the wavelength in the spectrum ranges is equal to or less than 70nm.
7. The high color gamut white LED light source module of claim 5, wherein the luminescent member further comprises a green powder, the green powder being photoluminescent.
8. The high-color-gamut white-light LED light source module of claim 7, wherein the peak wavelength of the green powder is in the range of 500nm to 560nm, and the half-wavelength width of the wavelength in the spectral range is equal to or less than 70nm.
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| CN117637966A (en) * | 2023-11-01 | 2024-03-01 | 北京易美新创科技有限公司 | White light package adopting blue-green bimodal monocrystalline chip and preparation method thereof |
| CN222261109U (en) * | 2024-04-10 | 2024-12-27 | 微纳光子(深圳)有限公司 | High-color-gamut LED light source module and display |
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| US9214601B1 (en) * | 2014-12-31 | 2015-12-15 | High Power Opto, Inc. | Electroluminescent and photoluminescent multiband white light emitting diode |
| CN109301050A (en) * | 2018-08-16 | 2019-02-01 | 佛山市国星光电股份有限公司 | LED white light device and preparation method thereof, LED backlight module |
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| CN117637966A (en) * | 2023-11-01 | 2024-03-01 | 北京易美新创科技有限公司 | White light package adopting blue-green bimodal monocrystalline chip and preparation method thereof |
| CN222261109U (en) * | 2024-04-10 | 2024-12-27 | 微纳光子(深圳)有限公司 | High-color-gamut LED light source module and display |
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