CN120103675A

CN120103675A - Light emitting unit and substrate processing device containing the same

Info

Publication number: CN120103675A
Application number: CN202311668455.6A
Authority: CN
Inventors: 蒋天明
Original assignee: Tuojing Chuangyi Shenyang Semiconductor Equipment Co ltd
Current assignee: Tuojing Chuangyi Shenyang Semiconductor Equipment Co ltd
Priority date: 2023-12-06
Filing date: 2023-12-06
Publication date: 2025-06-06
Also published as: WO2025118568A1

Abstract

The present application relates to a light emitting unit and a substrate processing device containing the same, wherein the light emitting unit comprises: a light emitting body extending substantially along a first direction, wherein the light emitting body emits UV radiation having a wavelength of about 100 nm to 400 nm; a first reflector partially surrounding the light emitting body, wherein the first reflector comprises a reflector body, a first film, a second film and a third film as described in the specification, wherein the second film is located between the first film and the third film substantially along a direction perpendicular to the first direction; and a second reflector which is farther from the first reflector than the light emitting body, wherein the first reflector directs the UV radiation toward the second reflector. Such a design can provide a flood pattern with a more uniform UV radiation intensity.

Description

Light emitting unit and substrate processing apparatus including the same

Technical Field

The present application relates to a semiconductor device including the design and manufacture of its components.

Background

In the fabrication of integrated circuits, displays, and solar panels, layers of dielectric, semiconductor, and conductor materials are typically formed on substrates such as semiconductor wafers, glass plates, metal plates, and the like. These layers are further processed to form electrical interconnects, dielectric layers, gates, and electrodes.

In some processes, ultraviolet (UV) radiation is used to treat multiple layers or features formed on a substrate. UV radiation devices have been widely used to produce substances on a variety of treated articles using UV light modification or photochemical reactions of the material. Thus, there is a continuing need for an improved curing efficiency to increase process throughput, and a need for a UV light emitting unit and substrate processing apparatus containing the same that can increase efficiency and have desirable material properties.

Although a variety of UV light emitting units and techniques have been developed, we are continually seeking further improvements to UV radiation treatment techniques.

Disclosure of Invention

The following presents a general description of the basic features of the application in order to provide a basic understanding of some aspects of the application.

The present application is first a light emitting unit including:

A light-emitting body extending generally in the 1 st direction, the light-emitting body emitting UV radiation having a wavelength of about 100nm to 400 nm;

A1 st reflector partially surrounding the light emitting body, the 1 st reflector comprising:

a reflector body defining an opening for passing said UV radiation,

A1 st film which is located on a surface of the reflector body adjacent to the light emitting body and has a reflectivity F74 for the UV radiation in a thickness direction of the 1 st film,

A 2 nd film located on a surface of the reflector body adjacent to the light emitting body and having a reflectivity F76 for the UV radiation in a thickness direction of the 2 nd film, wherein F76< F74, and

A 3 rd film which is located on a surface of the reflector body adjacent to the light emitting body and has a reflectivity F78 for the UV radiation in a thickness direction of the 3 rd film, wherein F78> F76,

Wherein the 2 nd film is located between the 1 st film and the 3 rd film in a direction substantially perpendicular to the 1 st direction, and

A2 nd reflector remote from the 1 st reflector compared to the light emitting body, wherein the 1 st reflector directs the UV radiation toward the 2 nd reflector.

In some embodiments, the 1 st film and the 2 nd film include a1 st gap therebetween.

In some embodiments, the 1 st gap extends substantially along the 1 st direction.

In some implementations, the 1 st gap is located between the 1 st film and the reflector body in a direction substantially perpendicular to the 1 st direction.

In some implementations, the 1 st gap is located between the 2 nd film and the reflector body in a direction substantially perpendicular to the 1 st direction.

In some embodiments, the 2 nd and 3 rd films include a2 nd gap therebetween.

In some embodiments, the 2 nd gap extends substantially along the 1 st direction.

In some embodiments, 1< F74/F76≤1.12.

In some embodiments, a spacing h1 is defined between the light emitting body and the 2 nd film in a direction substantially perpendicular to the 1 st direction, and a spacing d3 is defined between the 1 st film and the 3 rd film in a direction substantially parallel to the 1 st direction, wherein 2.5≤d3/h1≤3.5.

The present application further provides a light emitting unit, comprising:

a reflector body defining an opening for passing said UV radiation,

A1 st dichroic film located on a surface of the reflector body adjacent to the light emitting body, the 1 st dichroic film having a thickness t1,

A2 nd dichroic film located on a surface of the reflector body adjacent to the light emitting body, the 2 nd dichroic film having a thickness t2, and t2< t1, and

A 3 rd dichroic film located on a surface of the reflector body adjacent to the light emitting body, the 3 rd dichroic film having a thickness t3, and t3> t2,

In some embodiments, the 1 st dichroic film includes 35 to 45 sets of high refractive index layers and low refractive index layers alternately arranged.

In some embodiments, the high refractive index layer of the 1 st dichroic film has a thickness of 110 to 230nm.

In some embodiments, the low refractive index layer of the 1 st dichroic film has a thickness of 110 to 230nm.

In some embodiments, the 2 nd dichroic film comprises 25 to 35 sets of high refractive index layers and high refractive index layers alternately arranged.

In some embodiments, the high refractive index layer of the 2 nd dichroic film has a thickness of 115 to 280nm.

In some embodiments, the low refractive index layer of the 2 nd dichroic film has a thickness of 115 to 280nm.

In some embodiments, the 1 st dichroic film and the 2 nd dichroic film are in contact.

In some embodiments, the 2 nd dichroic film and the 3 rd dichroic film are in contact.

The present application also provides a substrate processing apparatus, comprising:

A processing chamber defining a space for accommodating the substrate carrier, and

A light emitting unit as described herein located above the substrate carrier.

In some embodiments, the substrate processing apparatus includes a motor coupled to the light emitting unit.

Drawings

Aspects of the application will be readily appreciated from the following detailed description when read in connection with the accompanying drawings. It should be noted that the various features may not be drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

Fig. 1 illustrates a cross-sectional perspective view of a substrate processing apparatus according to some embodiments of the application.

Fig. 2 depicts a cross-sectional view of a reflection path of UV radiation according to some comparative embodiments of the application.

Fig. 3a shows UV radiation illuminance simulation results according to some comparative embodiments of the present application.

FIG. 3b shows the intensity distribution of line a-a' in FIG. 3a

Fig. 4 illustrates a reflector design according to some embodiments of the application.

Fig. 5a illustrates a reflector design according to some embodiments of the application.

Fig. 5b illustrates a reflector design according to some embodiments of the application.

Fig. 6a illustrates a reflector design according to some embodiments of the application.

Fig. 6b illustrates a reflector design according to some embodiments of the application.

Fig. 7 depicts a dichroic film disposed on a reflector body.

Fig. 8 illustrates a cross-sectional view of a reflection path of UV radiation according to some embodiments of the application.

Fig. 9a shows UV radiation illuminance simulation results according to some embodiments of the present application.

Fig. 9b shows the intensity distribution of line b-b' in fig. 9 a.

Detailed Description

For clarity and conciseness of illustration, the same reference numbers in different drawings denote the same components unless specified otherwise. In addition, descriptions and details of well-known steps and components may be omitted for simplicity of the description. The use of the word "substantially" or "substantially" means that the value of a component has a parameter that is expected to be close to the stated value or position. However, as is well known in the art, there is always a slight difference that prevents a value or position from being exactly the stated value or position. It is well recognized in the art that deviations up to at least ten percent (10%) (and even to twenty percent (20%)) for some components including semiconductor doping concentrations are reasonable deviations from the ideal target exactly as described. The terms "first," "second," "third," and the like in the claims and/or in the detailed description, are used for distinguishing between similar elements and not necessarily for describing a sequential order, either temporally, spatially, in ranking, or in any other manner. It is to be understood that the terms so used are interchangeable under appropriate circumstances and that the embodiments described herein are capable of operation in other sequences than described or illustrated herein. Reference to "some embodiments" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. Thus, the appearances of the phrase "in some embodiments" appearing in various places throughout the specification are not necessarily all referring to the same embodiment, but, in some cases, may. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments, as would be apparent to one of ordinary skill in the art.

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to be limiting. In the present disclosure, recitation of a first feature being formed on or over a second feature in the description that follows may include embodiments in which the first feature is formed in direct contact with the second feature, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present application may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Embodiments of the application are discussed in detail below. However, it should be appreciated that many of the applicable concepts provided by the present application can be embodied in a wide variety of specific contexts. The particular embodiments discussed are merely illustrative and do not limit the scope of the application.

Silicon-containing thin film materials such as silicon oxide (SiO _x), silicon carbide (SiC), and carbon-doped silicon oxide (SiOC _x) are widely used in the fabrication of semiconductor devices. These films are typically formed on a semiconductor substrate by performing a Chemical Vapor Deposition (CVD) process within a chamber. For example, a chemical reaction between a silicon source and an oxygen source may produce a solid silicon oxide deposit on top of a semiconductor substrate within a CVD chamber. Likewise, silicon carbide and carbon-doped silicon oxide films may be formed by CVD reactions of organosilane sources containing at least one Si-C bond.

Notably, water is typically a by-product of the CVD reaction of organosilane compounds. Thus, water may be physically absorbed into the film in the form of water vapor or incorporated into the deposited film in the form of Si-OH bonds. However, we generally do not wish to have any such form of water binding. Therefore, we prefer to remove undesirable chemical bonds and compounds such as water from the deposited carbon-containing film. Furthermore, in some specific CVD processes, it is desirable to remove thermally unstable organic components from the sacrificial material.

To solve this problem, we usually post-treat CVD silicon oxide, carbon doped silicon oxide films with the aid of UV radiation. The use of UV radiation for curing and hardening CVD films can reduce the thermal expense of individual wafers and speed up the manufacturing process. Accordingly, the present application provides a light emitting unit and a substrate processing apparatus including the same, which can effectively cure a thin film deposited on a substrate.

Fig. 1 illustrates a cross-sectional perspective view of a substrate processing apparatus 10 according to some embodiments of the application. The substrate processing apparatus 10 includes a processing chamber 26 and a UV radiation emitting unit 12. The process chamber 26 may include a substrate carrier 20. A substrate carrier 20 may be disposed within the process chamber 26. The process chamber 26 may define a space for receiving the substrate carrier 20. The UV radiation emitting unit 12 may be located above the substrate carrier 20.

The substrate processing apparatus 10 may further include a gas source 19, a gas conduit 16 connected to the gas source 19, a vacuum pump 22, and a vacuum valve 24.

In fig. 1, the direction generally connecting the UV radiation emitting unit 12 with the substrate carrier 20 is defined as the z-direction. A direction substantially perpendicular to the z-direction may be defined as the x-direction. A direction substantially perpendicular to the z-direction may be defined as the y-direction. Thus, the z-direction is the outer product of the x-direction and the y-direction. The bearing surface of the substrate bearing seat 20 may extend substantially in the x-direction. The bearing surface of the substrate bearing seat 20 may extend substantially in the y-direction.

The UV radiation emitting unit 12 may be located above the process chamber 26. The UV radiation emitting unit 12 may be located above the substrate carrier 20. The UV radiation emitting unit 12 may be coupled to a process chamber 26. The UV radiation emitting unit 12 may be connected to a process chamber 26. The UV radiation emitting unit 12 may be vacuum connected to the process chamber 26. The UV radiation emitting unit 12 may be vacuum isolated from the process chamber 26.

The UV radiation emitting unit 12 may include a UV radiation emitting body 62, a reflector 64, and a reflector 66.

The UV radiation emitting body 62 may include various UV lamps known in the art, such as, but not limited to, mercury lamps and excimer (excimer) lamps. The UV radiation emitting body 62 may extend generally in the y-direction and may take on an elongated shape. The excimer lamp may comprise a Xe excimer lamp which outputs 172nm Deep Ultraviolet (DUV) featuring high energy and faster cure speed. Mercury lamps may vary from low to high lamp pressure and may emit UV radiation at wavelengths of about 100nm to 400nm, such as, but not limited to, 100, 120, 140, 150, 160, 180, 185, 200, 220, 240, 250, 254, 260, 280, 300, 320, 340, 350, 360, 365, 380, or 400nm. The UV radiation emitting body 62 may continuously emit UV radiation or may emit UV radiation in pulses. For example, the UV radiation emitting body 62 may be pulsed at a frequency of about 1Hz to 1000Hz (e.g., without limitation, 10Hz, 100Hz, 200Hz, 500 Hz). In the z-direction, the UV radiation emitting body 62 may be located between the reflector 64 and the reflector 66.

The reflector 64 may partially surround the UV radiation emitting body 62. The reflector 64 may define a space in which the UV radiation emitting body 62 is housed. The reflector 64 may be remote from the reflector 66 compared to the UV radiation emitting body 62. The reflector 64 may direct the UV radiation emitted by the UV radiation emitting body 62 toward the reflector 66. The reflector 64 may direct a portion of the UV radiation emitted by the UV radiation emitting body 62 toward the reflector 66. The reflector 64 may direct UV radiation emitted by the UV radiation emitting body 62 toward the substrate carrier 20. The reflector 64 may direct a portion of the UV radiation emitted by the UV radiation emitting body 62 toward the substrate carrier 20. The reflector 64 may extend generally in the x-direction. The reflector 64 may extend generally in the y-direction. The reflector 64 may extend generally in the z-direction. In the z-direction, the reflector 64 may be remote from the reflector 66 relative to the UV radiation emitting body 62.

The reflector 66 is designed to increase the intensity of the energy distributed over the substrate carrier 20. In the z-direction, the reflector 66 may be remote from the reflector 64 relative to the UV radiation emitting body 62. The reflector 66 may be located between the UV radiation emitting body 62 and the substrate carrier 20. The reflector 66 may direct UV radiation emitted by the reflector 64 toward the substrate carrier 20. The reflector 66 may alter the path of UV radiation that would otherwise not contact the substrate carrier 20 toward the substrate carrier 20.

In the z-direction, a spacing (not shown) of greater than 0 may be defined between the reflector 66 and the UV radiation emitting unit 12. The diameter of the lower edge of the reflector 66 may be smaller than the diameter of the substrate carrier 20, so that there may be no optical gap between the reflector 66 and the outer diameter of the substrate when viewed from the opposite direction of the UV radiation emitting body 62. Herein, unless otherwise specified, "pitch" may refer to the shortest distance between elements in a particular direction.

The reflector 66 includes a portion adjacent the reflector 64 and a portion adjacent the substrate carrier 20, wherein each portion includes opposing longitudinal surfaces that intersect at an apex that passes through the length of the longitudinal surfaces, and opposing lateral surfaces that extend between the ends of the longitudinal surfaces.

With this design, the reflector 66 may have channeling to reflect UV radiation falling outside the flood pattern of the reflector 64 such that the radiation impinges on the substrate carrier 20, thereby increasing the intensity of the energy distributed across the substrate carrier 20. Furthermore, the reflector 66 may match the flood pattern of the UV radiation emitting body 62 to a circular shape corresponding to the substantially circular substrate on which the exposure is performed.

Those skilled in the art will recognize that a variety of different simulation procedures and other techniques may be used to obtain a reflector 66 that is particularly suited for use with the UV radiation-emitting body 62 and reflector 64 pairing.

A UV transparent window 14 may be provided between the process chamber 26 and the UV radiation emitting unit 12. The UV transparent window 14 may be located between the UV radiation emitting body 12 and the substrate carrier 20. The UV transparent window 14 may be located between the UV radiation emitting body 62 and the substrate carrier 20. The UV transparent window 14 may be located between the reflector 64 and the substrate carrier 20. The UV transparent window 14 may be located between the reflector 66 and the substrate carrier 20. In the z-direction, a spacing (not shown) greater than 0 may be defined between the UV transparent window 14 and the reflector 66. The UV transparent window 14 may extend in the x-direction. The UV transparent window 14 may extend in the y-direction. The UV transparent window 14 may be substantially parallel to the UV radiation emitting body 62.

The UV transparent window 14 may be made of glass or other material capable of transmitting UV radiation, such as quartz. The function of the UV transparent window 14 is to isolate the process chamber 26 from the surrounding environment while allowing UV radiation to pass through.

UV radiation emitted by the UV radiation emitting body 62 may enter the process chamber 26 through the UV transparent window 14. The UV transparent window 14 may comprise synthetic quartz glass free of OH groups. The UV transparent window 14 may have a sufficient thickness to maintain a vacuum without breaking. In addition, the UV transparent window 14 may comprise fused silica. The UV transparent window 14 may maintain a vacuum in the process chamber 26. The UV transparent window 14 may seal the process chamber 26. Thus, the process chamber 26 may provide a space that maintains a pressure of about 1torr to about 650 torr.

The substrate carrier 20 may be substantially parallel to the UV radiation emitting body 62. The substrate carrier 20 may face the UV radiation emitting body 62. The substrate 32 may be provided on the substrate carrier 20. The substrate carrier 20 may be configured with a heater 30 for heating the substrate carrier 20. The substrate carrier 20 may be configured with a heater 30 for heating a substrate 32.

In the z-direction, a spacing h ₃ (not shown) may be defined between the substrate carrier 20 and the reflector 66. h ₃ may be 1,2, 3, 4 or 5cm. h ₃ may include the thickness of UV transparent window 14.

The substrate 32 is fed into the process chamber 26 through the load-lock chamber 40 and the gate valve 42 and mounted on the substrate carrier 20. Substrate 32 may contain a low-k material that has been deposited thereon. Such low-k materials may be formed by various methods known in the art. The substrate processing apparatus 10 may be used to cure various low-k materials known in the art, such as, but not limited to, low-k materials containing silicon atoms, oxygen atoms, and carbon atoms. In certain embodiments, UV radiation can break the-CH ₃ bonds as well as the-SiO bonds in the low-k material, rebuild the-SiO bonds, build an O-Si-O network, thereby increasing the mechanical strength of the low-k material.

Many different techniques may be used to rotate the UV radiation emitting unit 12 at least 180 degrees relative to the substrate 32. For example, the UV radiation emitting unit 12 may remain in a fixed position, while a motor may be coupled to the substrate carrier 20 to rotate the substrate 32 relative to the UV radiation emitting unit 12. Or the substrate 32 may remain in a fixed position and the motor may be coupled to the UV radiation emitting unit to rotate the UV radiation emitting unit 12 relative to the substrate 32. It is also possible to let the UV radiation emitting unit 12 and the substrate 32 rotate together in opposite directions.

The gas source 19 may comprise a process or purge gas. These process or purge gases enter the process chamber 26 through the gas conduit 16 and are then exhausted from the exhaust port 44 through the vacuum pump 22 and the vacuum valve 24. The substrate 32 may be processed in a particular process gas environment. Such a process gas may be used to prevent oxidation of the low-k material. The process gas may be an inert gas such as, but not limited to, he, ar. N ₂、O₂ is also possible.

The heater 30 may adjust the temperature of the substrate carrier 20 to about 0 ℃ to about 650 ℃, such as, but not limited to, 10 ℃, 50 ℃, 100 ℃,200 ℃, 300 ℃, 400 ℃, 500 ℃, 600 ℃, or 650 ℃, preferably between 300 ℃ and 450 ℃.

In the z-direction, a spacing h ₄ (not shown) may be defined between the substrate carrier 20 and the UV radiation-emitting body 62. h ₄ may be about 1cm to 100cm.

The irradiance of the UV radiation on the substrate carrier 20 is about 1mW/cm ² to 1000mW/cm ², such as, but not limited to, 10mW/cm ²、50mW/cm²、100mW/cm²、200mW/cm²、500mW/cm², or 800mW/cm ². The exposure time is about 1 second to 60 minutes, such as, but not limited to, 5 seconds, 10 seconds, 20 seconds, 50 seconds, 100 seconds, 200 seconds, 500 seconds, 1000 seconds. It should be appreciated that the irradiation time may be selected according to the thickness of the material to be irradiated. For example, for a 500nm thick layer of low-k material, the irradiation time may be about 30 minutes.

After UV irradiation, the gas generated in the process chamber 26 may be exhausted from the exhaust port 44 through the vacuum pump 22 and the vacuum valve 24. Accordingly, the substrate processing apparatus 10 may perform the above-described series of process steps according to an automated program in the controller 45. In some embodiments, the process steps include introducing a gas into the process chamber, irradiating the low-k material on the substrate with UV radiation, stopping the irradiation, and stopping the flow of the gas into the process chamber.

Fig. 2 depicts an x-z cross-sectional view of several reflection paths of UV radiation of some comparative embodiments, which is redrawn by simplifying certain elements in fig. 1. As shown in fig. 2, the reflector 64 and the reflector 66 generally allow UV radiation generated by the UV radiation emitting body 62 to be directed onto and impinge upon the substrate carrier 20. The UV transparent window 14 may be located between the UV radiation-emitting body 62 and the substrate carrier 20

Fig. 2 also shows the radiation path of the UV radiation emitting unit 12 impinging on the substrate carrier 20, the path 65 to the substrate carrier 20 after reflection by the reflector 64, and the paths 67 and 69 to the substrate carrier 20 after reflection by the reflector 64 and the reflector 66. It should be appreciated that the paths 65, 67, 69 shown in fig. 2 are exemplary only, and that many other reflected paths including relatively complex paths may be created by the reflectors 64 and 66, i.e., the radiation may be reflected by multiple points on the reflectors 64, 66.

In the comparative embodiment shown in fig. 2, the reflectivity of each point on reflector 64 is substantially the same and the reflectivity of each point on reflector 66 is substantially the same. Since path 65 is a path through single point reflection and paths 67 and 69 are paths through multiple points reflection, UV radiation reflected by both reflectors 64 and 66 (e.g., paths 67, 69) has a lower intensity than a path reflected by a single reflector 64 (e.g., path 65) while the path reflected by both reflectors 64 and 66. Thus, UV radiation of non-uniform illuminance is received on the substrate carrier 20.

Fig. 3a shows UV radiation illuminance simulation results for some comparative embodiments of the present application. In the substrate processing apparatus 10 shown in fig. 2, the substrate carrier 20 may have an illuminance (flood pattern) of UV radiation in the x-y cross-section as shown in fig. 3a when the reflectivity of each point on the reflectors 64, 66 is substantially the same (e.g., 90%). Fig. 3b shows the intensity distribution of the line segment a-a' in fig. 3a, wherein the horizontal axis in fig. 3b represents the position in the x-direction and the vertical axis represents the illuminance. Fig. 3a and 3b show that the center of the substrate carrier 20 has a higher illumination and the edge has a lower illumination. This is because multiple refraction and reflection phenomena occur in paths through both reflectors (e.g., paths 67, 69) such that the UV radiation becomes weaker after passing through these paths. That is why UV radiation of non-uniform illuminance is received on the substrate carrier 20 (i.e., the center illuminance of the substrate carrier 20 is high and the edge illuminance is low).

When the curing of the low-k material is not uniform, it may negatively impact device performance. First, uneven curing may cause stresses within the material, affecting its mechanical stability. Second, if the low-k material is not cured uniformly, it may result in a non-uniform distribution of electrical performance parameters (e.g., resistance, capacitance, etc.) in the material, thereby affecting the electrical performance of the device. In addition, uneven curing may also affect the reliability and lifetime of the material. Therefore, it is very important to achieve uniformity of UV radiation illuminance (i.e., uniformity of flood intensity) during material curing in semiconductor manufacturing.

Fig. 4 illustrates a reflector 64a design according to some embodiments of the application. The reflector 64a may replace the reflector 64 in fig. 1 and 2. For convenience of description, the z-direction in fig. 4 is opposite to that in fig. 1 and 2.

The reflector 64a includes a reflector body 72, a film 74, a film 76, and a film 78.

The reflector body 72 may partially surround the UV radiation emitting body 62. The reflector body 72 may define an opening 71 of the reflector 64 a. The reflector 64a may direct UV radiation toward the reflector 66 through the opening 71. The reflector 64a may direct UV radiation through the opening toward the substrate carrier 20. As a material for the reflector body, for example, but not limited to, high borosilicate glass.

The film 74 may be located on a surface of the reflector body 72 adjacent to the UV radiation emitting body 62. The membrane 74 may contact the reflector body 72. The film 74 may partially surround the UV radiation emitting body 62. A spacing of greater than 0 may be defined between the film 74 and the UV radiation emitting body 62. The film 74 has a reflectance F74 for light having a wavelength of 100nm to 400nm in a direction substantially along the thickness of the film 74. F74 may be greater than or equal to 85.5%, F74 may be less than 100%, F74 may be, for example, but not limited to ：85.5、86、86.5、87、87.5、88、88.5、89、89.5、90、90.5、91、91.5、92、92.5、93、93.5、94、94.5、95、95.5、96、96.5、97、97.5、97.6、97.8、98、98.2、98.4、98.5、98.6、98.8、99、99.1、99.2、99.3、99.4、99.5、99.6、99.7、99.8、99.9、 or <100%, and suitable F74 ranges may be any combination of the above values.

The film 76 may be located on a surface of the reflector body 72 adjacent to the UV radiation emitting body 62. The membrane 76 may contact the reflector body 72. The film 76 may partially surround the UV radiation emitting body 62. A spacing greater than 0 may be defined between the film 76 and the UV radiation emitting body 62. The film 76 has a reflectance F76 for light having a wavelength of 100nm to 400nm in a direction substantially along the thickness of the film 76. F76 may be greater than or equal to 85%, F76 may be less than or equal to 99.9%, F76 may be, for example, but not limited to ：85、85.5、86、86.5、87、87.5、88、88.5、89、89.5、90、90.5、91、91.5、92、92.5、93、93.5、94、94.5、95、95.5、96、96.5、97、97.5、97.6、97.8、98、98.2、98.4、98.5、98.6、98.8、99、99.1、99.2、99.3、99.4、99.5、99.6、99.7、99.8、 or 99.9%, and suitable F76 ranges may be any combination of the above values.

The film 78 may be located on a surface of the reflector body 72 adjacent to the UV radiation emitting body 62. The membrane 78 may contact the reflector body 72. The film 78 may partially surround the UV radiation emitting body 62. A spacing greater than 0 may be defined between the film 78 and the UV radiation emitting body 62. The film 78 has a reflectance F78 for light having a wavelength of 100nm to 400nm in a direction substantially along the thickness of the film 78. F78 may be greater than or equal to 85.5%, F78 may be less than 100%, F78 may be, for example, but not limited to ：85.5、86、86.5、87、87.5、88、88.5、89、89.5、90、90.5、91、91.5、92、92.5、93、93.5、94、94.5、95、95.5、96、96.5、97、97.5、97.6、97.8、98、98.2、98.4、98.5、98.6、98.8、99、99.1、99.2、99.3、99.4、99.5、99.6、99.7、99.8、99.9、 or <100%, and suitable F78 ranges may be any combination of the above values.

F76 is less than F74. The ratio of F74 to F76 (F74/F76) may be greater than 1, F74/F76 may be less than or equal to 1.12, F74/F76 may be, for example, but not limited to, 1.001, 1.01, 1.02, 1.03, 1.04, 1.05, 1.06, 1.07, 1.08, 1.09, 1.1, 1.11, or 1.12. Suitable F74/F76 ranges may be any combination of the above values.

F76 is less than F78. The ratio of F78 to F76 (F78/F76) may be greater than 1, F78/F76 may be less than or equal to 1.12, and F78/F76 may be, for example, but not limited to, 1.001, 1.01, 1.02, 1.03, 1.04, 1.05, 1.06, 1.07, 1.08, 1.09, 1.1, 1.11, or 1.12. Suitable F78/F76 ranges may be any combination of the above values.

F74 may be equal to F78. F74 may not be equal to F78. F74 may be greater than F78. F74 may be less than F78.

In the x-direction, the membrane 76 may be located between the membrane 74 and the membrane 78. In the z-direction, the film 76 may be located between the film 74 and the reflector body 72. In the z-direction, the film 76 may be located between the film 78 and the reflector body 72. Membrane 74 may be out of contact with membrane 76. Membrane 74 may be out of contact with membrane 78. Membrane 76 may be out of contact with membrane 78. Together, the membrane 74 and the membrane 78 may surround the membrane 76 in the x-direction.

In fig. 4, the thickness direction of the film 76 may be substantially parallel to the z-direction. The projection of film 74 in the x-direction may not overlap with the projection of film 76 in the x-direction. The projection of film 74 in the x-direction may not overlap with the projection of film 78 in the x-direction. The projection of film 74 in the z-direction may not overlap with the projection of film 76 in the z-direction. The projection of film 74 in the z-direction may overlap with the projection of film 78 in the z-direction. The projection of film 76 in the x-direction may not overlap with the projection of film 78 in the x-direction. The projection of the film 76 in the z-direction may not overlap with the projection of the film 78 in the z-direction.

In the x-direction, a spacing d1 may be defined between the films 74 and 76. In the x-direction, a distance d2 may be defined between the films 78 and 76. In the x-direction, a distance d3 may be defined between the films 78 and 74. d1 may be equal to d2. d1 may not be equal to d2. d1 may not be equal to d3. d2 may not be equal to d3.

A gap 75 may be included between the membrane 74 and the membrane 76. A gap 79 may be included between the membrane 78 and the membrane 76. The gap 75 may extend generally in the y-direction. The gap 79 may extend generally in the y-direction.

In the x-direction, the gaps 75 and 79 may be configured relative to the film 76. In the x-direction, the film 76 may be located between the gap 75 and the gap 79. In the x-direction, the width of the gap 75 may be defined as d1. In the x-direction, the width of the gap 79 may be defined as d2.

In the z-direction, a spacing h1 may be defined between the UV radiation emitting body 62 and the film 76. In the z-direction, h1 may be the maximum distance of separation between the UV radiation emitting body 62 and the film 76. The inventors have realized an optimized design of the reflector 64a through a repetitive process of simulating the light generated by the UV radiation emitting body 62. In this design, the ratio of d3 to h1 (d 3/h 1), F76, F74, and F78 may be configured according to the design rules of Table 1. The optimized design can improve the illumination uniformity of the floodlight pattern, thereby improving the performance of the substrate processing device.

TABLE 1

d3/h1	F76	F74	F78
				d3/h1≥3.41	0.887~0.902	0.898~0.913	0.898~0.913
3.13≤d3/h1<3.41	0.879~0.891	0.905~0.919	0.905~0.919
				2.83≤d3/h1<3.13	0.861~0.874	0.912~0.923	0.912~0.923
2.55≤d3/h1<2.83	0.855~0.866	0.918~0.930	0.918~0.930
				d3/h1<2.55	0.843~0.857	0.924~0.937	0.924~0.937

In some embodiments, the ratio of d3 to h1 (d 3/h 1), the ratio of F74 to F76 (F74/F76), and the ratio of F78 to F76 (F78/F76) may be configured according to the design rules of Table 2. The optimized design can improve the illumination uniformity of the floodlight pattern, thereby improving the performance of the substrate processing device.

TABLE 2

d3/h1	F74/F76	F78/F76
			d3/h1≥3.41	1.001~1.029	1.001~1.029
3.13≤d3/h1<3.41	1.016~1.046	1.016~1.046
			2.83≤d3/h1<3.13	1.044~1.072	1.044~1.072
2.55≤d3/h1<2.83	1.060~1.088	1.060~1.088
			d3/h1<2.55	1.079~1.111	1.079~1.111

Thus, the ratio of d3 to h1 (d 3/h 1) may be greater than or equal to 2.5, d3/h1 may be less than or equal to 3.5, d3/h1 may be, for example, but not limited to, 2.5, 2.55, 2.6, 2.65, 2.7, 2.75, 2.8, 2.85, 2.9, 2.95, 3, 3.05, 3.1, 3.15, 3.2, 3.25, 3, 3.35, 3.4, 3.45, or 3.5, a suitable d3/h1 range may be any combination of the above values

Fig. 5a illustrates a reflector 64b design according to some embodiments of the application. The reflector 64b may replace the reflector 64 in fig. 1 and 2. For convenience of description, the z-direction in fig. 5 is opposite to that in fig. 1 and 2.

The reflector 64b is substantially identical to the reflector 64a shown in fig. 4, with the following differences:

Membrane 74 may be in contact with membrane 76. Membrane 78 may be in contact with membrane 76. The membrane 74 may cover the gap 75. The membrane 78 may cover the gap 79. The membrane 74 may cover the membrane 76. Film 78 may cover film 76. In the z-direction, the film 74 and the reflector body 72 may be configured relative to the gap 75. In the z-direction, the film 78 and the reflector body 72 may be configured relative to the gap 79.

In fig. 5a, the thickness direction of the film 76 may be substantially parallel to the z-direction. The projection of film 74 in the x-direction may overlap with the projection of film 76 in the x-direction. The projection of film 74 in the x-direction may overlap with the projection of film 78 in the x-direction. The projection of film 74 in the z-direction may overlap with the projection of film 76 in the z-direction. The projection of film 74 in the z-direction may overlap with the projection of film 78 in the z-direction. The projection of film 76 in the x-direction may overlap with the projection of film 78 in the x-direction. The projection of the film 76 in the z-direction may overlap with the projection of the film 78 in the z-direction.

Fig. 5b illustrates a reflector 64c design according to some embodiments of the application. The reflector 64c may replace the reflector 64 in fig. 1 and 2. For convenience of description, the z-direction in fig. 5b is opposite to that in fig. 1 and 2.

The reflector 64c is substantially identical to the reflector 64b shown in fig. 5a, with the following differences:

The gap 75 may not be included between the films 74 and 76, and thus, d1 is 0. The gap 79 may not be included between the membrane 78 and the membrane 76, and thus, d2 is 0.

Fig. 6a illustrates a reflector 64d design according to some embodiments of the application. The reflector 64d may replace the reflector 64 in fig. 1 and 2. For convenience of description, the z-direction in fig. 6 is opposite to that in fig. 1 and 2.

The reflector 64d is substantially identical to the reflector 64a shown in fig. 4, with the following differences:

Membrane 74 may be in contact with membrane 76. Membrane 78 may be in contact with membrane 76. The membrane 76 may cover the gap 75. The membrane 76 may cover the gap 79. Film 76 may cover film 74. The film 76 may cover the film 78. In the z-direction, the film 76 and the reflector body 72 may be configured relative to the gap 75. In the z-direction, the film 76 and the reflector body 72 may be configured relative to the gap 79.

In fig. 6a, the thickness direction of the film 76 may be substantially parallel to the z-direction. The projection of film 74 in the x-direction may overlap with the projection of film 76 in the x-direction. The projection of film 74 in the x-direction may overlap with the projection of film 78 in the x-direction. The projection of film 74 in the z-direction may overlap with the projection of film 76 in the z-direction. The projection of film 74 in the z-direction may overlap with the projection of film 78 in the z-direction. The projection of film 76 in the x-direction may overlap with the projection of film 78 in the x-direction. The projection of the film 76 in the z-direction may overlap with the projection of the film 78 in the z-direction.

Fig. 6b illustrates a reflector 64e design according to some embodiments of the application. The reflector 64e may replace the reflector 64 in fig. 1 and 2. For convenience of description, the z-direction in fig. 6b is opposite to that in fig. 1 and 2.

The reflector 64e is substantially identical to the reflector 64d shown in fig. 6a, with the following differences:

In some embodiments, a dichroic film may be disposed on the reflector body 72 in order to obtain a desired reflectivity in the wavelength range of 100nm to 400 nm. The dichroic film used in the present application can selectively pass light in a desired wavelength range while reflecting light in other wavelength ranges.

Fig. 7 depicts a dichroic film 80 that may be disposed on the reflector body 72. Dichroic film 80 may serve as film 74. A dichroic film 80 may be used as film 76. A dichroic film 80 may be used as film 78. Dichroic film 80 may include one or more layers 82 and one or more layers 84. Layers 82 and 84 may be alternately disposed on reflector body 72.

Layers 82 and 84 may be periodically disposed on reflector body 72. Layer 82 may be in contact with layer 84. Layer 82 may not be in contact with layer 84. Layer 82 may be in contact with reflector body 72. Layer 82 may not contact reflector body 72. Layer 84 may be in contact with reflector body 72. Layer 84 may not contact reflector body 72.

Layer 82 may have a refractive index R82. Layer 84 may have a refractive index R84. For light having a wavelength of 100nm to 400nm, R82 may be greater than or equal to 1.6, R82 may be less than or equal to 1.9, R82 may be, for example but not limited to, 1.6, 1.63, 1.65, 1.68, 1.7, 1.73, 1.75, 1.78, 1.8, 1.83, 1.85, 1.88, or 1.9, a suitable R82 range may be any combination of the above values, R84 may be greater than or equal to 1.2, R84 may be less than or equal to 1.5, R84 may be, for example but not limited to, 1.2, 1.23, 1.25, 1.28, 1.3, 1.33, 1.35, 1.38, 1.4, 1.43, 1.45, 1.48, or 1.5, and a suitable R84 range may be any combination of the above values. R82 may be greater than R84. Thus, layer 82 may be a high refractive index layer. Layer 84 may be a low refractive index layer.

As a material of the high refractive index layer 82, for example, but not limited to, al ₂O₃.

As a material of the low refractive index layer 84, for example, but not limited to, M _gF₂.

Layer 82 may have a thickness t82, t82 may be greater than or equal to 4 μm, t82 may be less than or equal to 8 μm, t82 is for example, but not limited to, 4, 4.5, 5, 5.5, 6, 6.5, 7, 7.5, or 8 μm, and suitable t82 ranges may be any combination of the above values. Layer 84 may have a thickness t84, t84 may be greater than or equal to 4 μm, t84 may be less than or equal to 8 μm, t84 is for example, but not limited to, 4, 4.5, 5, 5.5, 6, 6.5, 7, 7.5, or 8 μm, and a suitable t84 range may be any combination of the above values.

Dichroic film 80 may serve as film 74. The inventors have realized an optimized design for reflectors 64a-64e by employing a iterative process of simulating the light produced by UV radiation emitting body 62, wherein when used as film 74, layers 82 and 84 may be disposed on reflector body 72 according to the design rules shown in table 3:

TABLE 3 Table 3

A dichroic film 80 may be used as film 76. When used as film 76, layers 82 and 84 may be disposed on reflector body 72 according to the design rules shown in Table 4:

TABLE 4 Table 4

A dichroic film 80 may be used as film 78. When used as film 78, layers 82 and 84 may be disposed on reflector body 72 according to the design rules shown in Table 5:

TABLE 5

Thus, the thickness of film 74 may be equal to the thickness of film 76. The thickness of film 74 may be equal to the thickness of film 78. The thickness of the film 76 may be equal to the thickness of the film 78. The thickness of membrane 74 may be greater than the thickness of membrane 76. The thickness of membrane 74 may be greater than the thickness of membrane 78. The thickness of the membrane 76 may be greater than the thickness of the membrane 74. The thickness of the film 76 may be greater than the thickness of the film 78. The thickness of film 78 may be greater than the thickness of film 74. The thickness of film 78 may be greater than the thickness of film 76.

Fig. 8 shows an x-z directional cross-sectional view of several reflection paths of UV radiation of a substrate processing apparatus 10a according to some embodiments, the substrate processing apparatus 10a being substantially identical to the substrate processing apparatus 10 shown in fig. 1, 2, with the following differences:

The reflector 64 shown in fig. 2 is replaced with a reflector 64a as shown in fig. 4.

The arrangement of the films 74, 76 and 78 allows the UV radiation to be reflected through a specific path. Specifically, film 74 is configured such that path 69 is a path that is reflected by film 74, film 76 is configured such that path 65 is a path that is reflected by film 76, and film 78 is configured such that path 67 is a path that is reflected by film 78. One skilled in the art can contemplate using a variety of different simulation programs and other techniques to determine the position of the films 74, 76, 78 mated with the UV radiation emitting body 62 and the substrate carrier 20.

Fig. 9a shows UV radiation illuminance simulation results for some embodiments of the present application. In the substrate processing apparatus 10a shown in fig. 8, the substrate carrier 20 may have an illuminance (flood pattern) of UV radiation in the x-y cross section as shown in fig. 9a, where F74 may be 90%, F76 may be 85%, and F78 may be 90%. Fig. 9b shows the intensity distribution of line b-b' in fig. 9a, wherein the horizontal axis in fig. 9b represents the position in the x-direction and the vertical axis represents the illuminance. Fig. 9a and 9b illustrate that the center and edge of the substrate carrier 20 have substantially the same illumination intensity, according to some embodiments of the application. This means that the substrate carrier 20 exhibits a substantially uniform flood pattern. This design helps to improve the uniformity of the UV curing process, thereby improving the performance and reliability of the semiconductor device.

In some embodiments, the reflector 64 in fig. 2 may be replaced with the reflector 64b in fig. 5a, or the reflector 64 in fig. 2 may be replaced with the reflector 64c in fig. 5b, or the reflector 64 in fig. 2 may be replaced with the reflector 64d in fig. 6a, or the reflector 64 in fig. 2 may be replaced with the reflector 64e in fig. 6 b. In these cases, the configuration of the films 74, 76 and 78 is such that UV radiation can be reflected through a specific path. Specifically, film 74 is configured such that path 69 is a path that is reflected by film 74, film 76 is configured such that path 65 is a path that is reflected by film 76, and film 78 is configured such that path 67 is a path that is reflected by film 78. This design achieves the effect shown in fig. 9a and 9b, i.e. the center and edges of the substrate carrier 20 have substantially the same illuminance. This means that the substrate carrier 20 exhibits a substantially uniform flood pattern. This design helps to improve the uniformity of the UV curing process, thereby improving the performance and reliability of the semiconductor device. This is a very important design advantage because it is important to achieve uniformity of the material curing process in the semiconductor process.

As used herein, spatially relative terms such as "below," "lower," "above," "upper," "lower," "left," "right," and the like may be used herein for ease of description to describe one component or feature's relationship to another component or feature as illustrated in the figures. In addition to the orientations depicted in the figures, the spatially relative terms are intended to encompass different orientations of the device in use or operation. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

It should be noted that the values of width, distance, etc. described in the present application are merely illustrative, and the present application is not limited thereto. In some embodiments, these values may be adjusted according to the actual application of the present application without departing from the spirit of the present application.

As used herein, the terms "about," "substantially," and "about" are used to describe and contemplate small variations. When used in connection with an event or circumstance, the term can refer to instances where the event or circumstance occurs explicitly and instances where it is very close to the event or circumstance. As used herein with respect to a given value or range, the term "about" or "similar" generally means within ±10%, ±5%, ±1% or ±0.5% of the given value or range. Ranges can be expressed herein as from one endpoint to the other endpoint, or between two endpoints. Unless otherwise specified, all ranges disclosed herein include endpoints. The term "substantially coplanar" may refer to two surfaces that are positioned along a same plane within a few micrometers (μm), such as within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm. When referring to "substantially" the same value or feature, the term may refer to a value that is within ±10%, ±5%, ±1% or ±0.5% of the average value of the value.

The foregoing has outlined features of several embodiments and detailed aspects of the present application. The embodiments described in this disclosure may be readily used as a basis for designing or modifying other processes and structures for carrying out the same or similar purposes and/or obtaining the same or similar advantages of the embodiments introduced herein. Such equivalent constructions do not depart from the spirit and scope of the present disclosure and are susceptible to various changes, substitutions and alterations without departing from the spirit and scope of the present disclosure.

While the subject matter of the present specification has been described in terms of certain preferred and exemplary embodiments, the foregoing drawings and description of the present specification depict only typical, non-limiting examples of embodiments of the subject matter, and therefore the preceding drawings and description are not to be considered as limiting its scope, as many alternatives and modifications will be apparent to those skilled in the art.

As the following claims reflect, inventive aspects may lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims set forth below are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this application. Furthermore, although some embodiments described herein include some features contained in other embodiments, but not others contained therein, it should be understood by those skilled in the art that combinations of features of different embodiments are intended to be within the scope of the application, and are intended to form different embodiments.

Claims

1. A light emitting unit, comprising:

a reflector body defining an opening for passing said UV radiation,

2. The light emitting unit of claim 1, wherein the 1 st film and the 2 nd film comprise a1 st gap therebetween.

3. The light emitting unit of claim 2, wherein the 1 st gap extends substantially along the 1 st direction.

4. The light emitting unit of claim 2, wherein the 1 st gap is located between the 1 st film and the reflector body in a direction substantially perpendicular to the 1 st direction.

5. The light emitting unit of claim 2, wherein the 1 st gap is located between the 2 nd film and the reflector body in a direction substantially perpendicular to the 1 st direction.

6. The light emitting unit according to claim 2, wherein a2 nd gap is included between the 2 nd film and the 3 rd film.

7. The light emitting unit of claim 6, wherein the 2 nd gap extends substantially along the 1 st direction.

8. The light emitting unit according to claim 1, wherein 1< F74/F76 is equal to or less than 1.12.

9. The light emitting unit according to claim 8, wherein a distance h1 is defined between the light emitting body and the 2 nd film in a direction substantially perpendicular to the 1 st direction, and a distance d3 is defined between the 1 st film and the 3 rd film in a direction substantially parallel to the 1 st direction, wherein 2.5≤d3/h1≤3.5.

10. A light emitting unit, comprising:

a reflector body defining an opening for passing said UV radiation,

11. The light-emitting unit of claim 10, wherein the 1 st dichroic film comprises 35 to 45 sets of alternately configured high refractive index layers and low refractive index layers.

12. The light-emitting unit according to claim 11, wherein a thickness of the high refractive index layer of the 1 st dichroic film is 110 to 230nm.

13. The light-emitting unit according to claim 11, wherein a thickness of the low refractive index layer of the 1 st dichroic film is 110 to 230nm.

14. The light emitting unit of claim 11, wherein the 2 nd dichroic film comprises 25 to 35 sets of alternately configured high refractive index layers and high refractive index layers.

15. The light emitting unit of claim 14, wherein the high refractive index layer of the 2 nd dichroic film has a thickness of 115 to 280nm.

16. The light emitting unit of claim 14, wherein the low refractive index layer of the 2 nd dichroic film has a thickness of 115 to 280nm.

17. The light emitting unit of claim 10, wherein the 1 st dichroic film and the 2 nd dichroic film are in contact.

18. The light emitting unit of claim 17, wherein the 2 nd dichroic film and the 3 rd dichroic film are in contact.

19. A substrate processing apparatus, comprising:

The light emitting unit of any one of claims 1 to 15, located above the substrate carrier.

20. The substrate processing apparatus of claim 19, comprising a motor coupled to the light emitting unit.