CN120127074B - Heat abstractor for power device - Google Patents
Heat abstractor for power deviceInfo
- Publication number
- CN120127074B CN120127074B CN202510617970.4A CN202510617970A CN120127074B CN 120127074 B CN120127074 B CN 120127074B CN 202510617970 A CN202510617970 A CN 202510617970A CN 120127074 B CN120127074 B CN 120127074B
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- heat dissipation
- heat
- outlet
- heat dissipating
- inlet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A heat dissipation device for a power device includes a heat dissipation assembly, a chip assembly, and an injection molded housing. The heat dissipation assembly comprises a base, a groove, an inlet, an outlet, a runner, a heat dissipation substrate and a stepped region. The flow channel is V-shaped and two opening directions of the flow channels are arranged in opposite directions, and the round corners of the bent parts of the flow channels are arranged, so that the flow channels are communicated with the inlet or the outlet at an upward inclined angle, liquid accumulation or layering caused by horizontal flow is avoided, and the flow channels can be more smoothly passed. The stepped areas are positioned on the end faces of the grooves, facing the heat-dissipating substrate, the distances between the stepped areas and the heat-dissipating substrate are increased in a stepped manner along the direction from the inlet to the outlet, and the distances between the stepped areas and the heat-dissipating substrate are gradually increased along with the flowing of the cooling liquid, so that more cooling liquid is gradually contained. The problem that the heat exchange effect is poor due to the fact that the temperature of the cooling liquid is relatively high when the cooling liquid flows to the outlet along with the heat exchange is avoided.
Description
Technical Field
The invention relates to the technical field of power modules, in particular to a heat dissipation device for a power device.
Background
With the rapid development of power electronics technology, the demand for high-power IGBT modules in high-frequency, high-power density applications is increasing. However, if heat generated by the power module in the operation process cannot be dissipated in time, the temperature of the chip is increased, the performance is degraded and even fails. Therefore, an efficient and uniform heat dissipation technique becomes a key to ensure the reliability of the power module.
At present, the cooling mode of the power module mainly comprises air cooling, circulating water cooling, heat pipe cooling, spray cooling, jet cooling, micro-channel cooling technology and the like. The liquid cooling heat dissipation has the advantages of high heat dissipation efficiency, compact volume and the like, and becomes a main stream cooling scheme of the high-power IGBT module. However, in the prior art, the flow path of the cooling liquid from the inlet to the outlet is longer, the temperature of the cooling liquid is gradually increased in the process of absorbing heat, the subsequent heat dissipation capacity is reduced, and the difference of the temperature difference of chips near the inlet and the outlet is caused. In addition, the existing flow channels are of a single-depth structure, and cannot be effectively matched with the fin column layout, so that the heat exchange efficiency of the cooling liquid in a high-temperature area is insufficient, and the heat exchange efficiency in a low-temperature area is excessive, and the overall heat exchange efficiency is unbalanced.
Disclosure of Invention
In view of the above, the present invention provides a heat dissipating device for a power device to solve the above-mentioned technical problems.
The heat dissipation device for the power device dissipates heat through cooling liquid and comprises a heat dissipation assembly, a chip assembly arranged on the heat dissipation assembly and an injection molding shell arranged on the chip assembly. The heat dissipation assembly comprises a base, a groove formed in the base, an inlet formed in the bottom of the base, an outlet formed in the bottom of the base, two flow channels respectively communicated with the groove and the inlet or the outlet, a heat dissipation substrate arranged on the base, and at least two stepped areas formed in the groove. The flow channel is V-shaped, the opening directions of the two flow channels are opposite, round corners at the bending positions of the flow channels are arranged, and a plurality of heat dissipation columns are arranged on the end face of the heat dissipation substrate, which faces the groove, in an array mode. The stepped areas are positioned on the end face of the groove, facing the heat dissipation substrate, and the distances between the stepped areas and the heat dissipation substrate are increased in a stepped manner in the direction from the inlet to the outlet. The arrangement direction of the plurality of stepped regions is parallel to the flow direction of the fluid, and the length of the heat dissipation column is the same as the depth of the stepped regions at corresponding positions.
Further, each row of the heat dissipation columns is arranged at equal intervals, two adjacent rows of the heat dissipation columns are arranged in a staggered mode, each column of the heat dissipation columns is arranged at equal intervals, and two adjacent columns of the heat dissipation columns are arranged in a staggered mode.
Further, the radian of the heat dissipation column near one end of the inlet is larger than that of the heat dissipation column near one end of the outlet, one end of the heat dissipation column near the inlet is a semicircular end, one end of the heat dissipation column near the outlet is a semicircular end, and the section of the heat dissipation column is in a water drop shape.
Further, the corner radius R of the bending part of the flow channel is 0.5mm < R <5mm.
Further, the extending direction of the two ends of the flow channel is inclined at an angle of 5 degrees to 35 degrees with respect to the horizontal direction.
Further, the chip assembly includes a plurality of ceramic copper clad substrates, a plurality of IGBT chips disposed on the ceramic copper clad substrates, a plurality of FRD chips disposed on the ceramic copper clad substrates, an NTC resistor disposed on the ceramic copper clad substrates, and a plurality of Pin needles disposed on the ceramic copper clad substrates.
Further, the ceramic copper-clad substrate has a structure that copper layers are arranged on the upper surface and the lower surface, and an insulating layer is arranged in the middle, and the insulating layer is ceramic and specifically comprises at least one of an AlO ceramic layer, an AlO doped zirconia ceramic layer, an AlN ceramic layer, a GAN ceramic layer and a SiN ceramic layer.
Further, the number of the ceramic copper-clad substrates is the same as that of the stepped regions, and the positions of the ceramic copper-clad substrates correspond to each other.
Further, the injection molding shell surrounds the periphery of the chip assembly, and silica gel is filled between the injection molding shell and the chip assembly.
Compared with the prior art, the flow channels of the heat dissipation device for the power device are V-shaped, the opening directions of the two flow channels are opposite, and the inclination angles of the extending directions of the two ends of the flow channels and the horizontal direction are 5-35 degrees, so that the flow channels are communicated with the grooves and the inlet or the outlet at an inclination upward angle, fluid is guided to flow upwards by the inclination angle, liquid accumulation or layering caused by horizontal flow is avoided, and cooling liquid can pass through the flow channels more smoothly in the flowing process. The distance between the plurality of stepped regions and the heat dissipation substrate increases stepwise in a direction from the inlet toward the outlet. The arrangement direction of the plurality of stepped regions is parallel to the flow direction of the fluid. The distance from the stepped region to the heat radiating substrate is gradually increased along with the flowing of the cooling liquid, so that more cooling liquid is gradually contained. The volume capable of containing cooling liquid is changed through the stepped areas with different heights, the heat exchange area is changed by the heat dissipation columns with different lengths, the heat dissipation effect balance of different areas is guaranteed, and the problem that the heat exchange effect is poor due to the fact that the temperature of the cooling liquid is relatively high when flowing to an outlet along with heat exchange is avoided.
Drawings
Fig. 1 is a schematic structural diagram of a heat dissipating device for a power device according to the present invention.
Fig. 2 is an exploded structure schematic view of the heat dissipating device for a power device of fig. 1.
Fig. 3 is a schematic structural diagram of a base of the heat dissipating device for a power device of fig. 1.
Fig. 4 is a schematic structural diagram of a heat dissipation substrate of the heat dissipation device for a power device of fig. 1.
Fig. 5 is a cross-sectional view of the heat dissipating device for a power device of fig. 1.
Fig. 6 is a thermal simulation experiment diagram of the heat dissipating device for a power device of fig. 1.
Detailed Description
Specific embodiments of the present invention are described in further detail below. It should be understood that the description herein of the embodiments of the invention is not intended to limit the scope of the invention.
Fig. 1 to 6 are schematic structural diagrams of a heat dissipating device for a power device according to the present invention. The heat dissipation device for a power device includes a heat dissipation assembly 10, a chip assembly 20 disposed on the heat dissipation assembly 10, and an injection molded case 30 disposed on the chip assembly 20. It is conceivable that the heat dissipating device for a power device further includes other functional modules, such as a connection assembly, an electrical connection assembly, a mounting assembly, etc., which are known to those skilled in the art, and will not be described herein.
The heat dissipation assembly 10 comprises a base 11, a groove 12 formed in the base 11, an inlet 13 formed at the bottom of the base 11, an outlet 14 formed at the bottom of the base 11, two flow passages 15 respectively communicating the groove 12 and the inlet 13 or the outlet 14, a heat dissipation substrate 16 formed on the base 11, and at least two stepped regions 17 formed in the groove 12.
The base 11 is used for carrying the above-mentioned functional modules. The base 11 is provided with various functional structures, such as screws, mounting holes, etc. for completing the mounting and assembly of the functional modules, which may be provided according to actual needs, and will not be described in detail here.
The groove 12 is formed on an end surface of the base 11 facing the heat dissipating substrate 16, and is used for providing a space for flowing a cooling liquid after the heat dissipating substrate 16 is disposed.
The inlet 13 and the outlet 14 are arranged at the bottom of the base 11, so that the runner 15 can be avoided, and the compact design reduces the volume of the heat dissipation base, thereby being convenient for integration into high-power density equipment. The inlet 13 and the outlet 14 are respectively arranged at two opposite sides of the bottom of the base 11.
The flow channel 15 is V-shaped and two opening directions of the flow channel 15 are arranged in opposite directions, a round corner is arranged at a bending part of the flow channel 15, the radius R of the round corner is 0.5mm < R <5mm, the separation of fluid and vortex generation are reduced, and the flowing stability of cooling liquid is improved. The extending direction of the two ends of the flow channel 15 is inclined at an angle of 5 ° to 35 ° relative to the horizontal direction, so that the flow channel 15 communicates with the groove 12 and the inlet 13 or the outlet 14 at an upward inclined angle, and the inclined angle guides the fluid to flow upward, thereby avoiding the accumulation or layering of the fluid caused by the horizontal flow, and enabling the coolant to pass through the flow channel more smoothly in the flowing process. Meanwhile, the flattened design of the flow channel 15 increases the contact area between the cooling liquid and the wall surface of the flow channel in the flowing process, and increases the heat exchange area between the cooling liquid and the wall surface of the flow channel. Because the flow channel 15 needs to be communicated with the groove 12 and the inlet 13 or the outlet 14 at an upward inclined angle, the inlet 13 and the outlet 14 are arranged at the bottom of the base 11 and can avoid the bending position of the flow channel 15, so that the flow channel 15 is ensured to have enough space for bending.
The heat dissipation substrate 16 is fixed to the base 11 by screws and covers the groove 12, thereby sealing the gap between the groove 12 and the heat dissipation substrate 16 to form a channel through which the cooling liquid flows. The heat dissipating substrate 16 may be a nickel plated aluminum plate or a nickel plated copper plate.
The end face of the heat dissipation substrate 16 facing the groove 12 is provided with a plurality of heat dissipation columns 18 in an array manner. Each row of heat dissipation posts 18 is arranged at equal intervals, two adjacent rows of heat dissipation posts 18 are arranged in a staggered manner, each column of heat dissipation posts 18 is arranged at equal intervals, and two adjacent columns of heat dissipation posts 18 are arranged in a staggered manner, so that the staggered arrangement can increase the density of the heat dissipation posts 18, take away more heat in unit area, and improve the heat dissipation capacity. Meanwhile, a linear flow path of the cooling liquid is broken, fluid is forced to flow around, contact time is prolonged, and heat exchange efficiency is improved. The radian of one end of the heat dissipation post 18 close to the inlet 13 is larger than that of one end of the heat dissipation post 18 close to the outlet 14, one end of the heat dissipation post 18 close to the inlet 13 is a semicircular end 181, and one end of the heat dissipation post 18 close to the outlet 14 is a semicircular end 182, so that the section of the heat dissipation post 18 is in a water drop shape.
When the water touches the semicircular end 181, the smooth shape of the semicircular end 181 can reduce flow separation and turbulence generation when the cooling liquid enters the area of the heat dissipation column 18, and the tail part of the semicircular end 182 can lengthen the streamline, thereby increasing the residence time of the fluid on the surface of the heat dissipation column 18 and enhancing the convection heat exchange.
The stepped regions 17 are located on the end face of the groove 12 facing the heat dissipation substrate 16, and distances between the plurality of stepped regions 17 and the heat dissipation substrate 16 are increased stepwise in a direction from the inlet 13 toward the outlet 14. The arrangement direction of the plurality of stepped regions 17 is parallel to the flow direction of the fluid. When the cooling liquid just enters the stepped region 17, the distance from the stepped region 17 near the inlet 13 to the heat dissipation substrate 16 is smaller because the temperature of the cooling liquid just enters is low, and the length of the heat dissipation post 18 is shorter than the length of the heat dissipation post 18 positioned at the stepped region 17 at other heights because of the limitation of the distance from the stepped region 17 to the heat dissipation substrate 16, so that the heat exchange area is relatively smaller, and meanwhile, the space between the stepped region 17 and the heat dissipation substrate 16 can accommodate a small volume of cooling liquid, so that the excessive cooling is avoided to cause the cooling liquid to heat up too fast and influence the heat exchange at the back. Along with the continuous flow of the cooling liquid, the distance from the stepped region 17 to the heat dissipation substrate 16 is gradually increased, so that more volume of cooling liquid is gradually contained, and meanwhile, the length of the heat dissipation column 18 is also gradually increased, so that the heat exchange area is increased, the surface of the heat dissipation column 18 is flushed by a large amount of cooling liquid, heat is rapidly taken away, and the heat dissipation efficiency at the outlet is ensured. The volume capable of containing cooling liquid is changed through the stepped areas 17 with different heights, the heat exchange areas of the heat dissipation columns 18 with different lengths are changed, the heat dissipation effect balance of different areas is guaranteed, and the problem that the heat exchange effect is poor due to the fact that the temperature of the cooling liquid is relatively high when flowing to an outlet along with heat exchange is avoided. Referring to fig. 6, it can be seen that according to the test results, the temperatures of the chip assemblies 20 in different areas are averaged, and the heat dissipation effect meets the requirements.
The stepped region 17 is provided with three in this embodiment, the number of which is related to the number of DBCs in the chip assembly 20, and a detailed description will be described below in connection with the chip assembly 20. The length of the heat dissipation post 18 is the same as the depth of the stepped region 17 at the corresponding position, so that one end of the heat dissipation post 18 clings to the stepped region 17, the transverse flow around and vortex generation of fluid in the flow channel are reduced, and the heat exchange effect is ensured.
The chip assembly 20 includes a plurality of ceramic copper clad substrates 21, a plurality of IGBT chips 22 disposed on the ceramic copper clad substrates 21, a plurality of FRD chips 23 disposed on the ceramic copper clad substrates 21, an NTC resistor 24 disposed on the ceramic copper clad substrates 21, and a plurality of Pin needles 25 disposed on the ceramic copper clad substrates 21.
The ceramic copper-clad substrate 21 has a structure in which copper layers are provided on the upper and lower surfaces and an insulating layer is provided in the middle. The insulating layer is ceramic, and specifically comprises at least one of an Al2O3 ceramic layer, an Al2O3 doped zirconia ceramic layer, an AlN ceramic layer, a GAN ceramic layer and a Si3N4 ceramic layer. The lower copper layer of the ceramic copper-clad substrate 21, which is located toward the heat-dissipating substrate 16, is soldered to the heat-dissipating substrate 16, and the upper copper layer, which is located away from the heat-dissipating substrate 16, is used for disposing various electronic components such as an IGBT chip 22, an FRD chip 23, and the like. The ceramic copper-clad substrate 21 is mainly used as a carrier for various electronic components in the power electronic module technology, and should be a prior art, and will not be described herein. The ceramic copper-clad substrate 21 is provided with three in this embodiment. The number of the ceramic copper clad substrates 21 is the same as that of the stepped regions 17 and the positions of the ceramic copper clad substrates correspond to each other, so that the power devices on each ceramic copper clad substrate 21 are ensured to have corresponding cooling liquid paths, and more flow is accommodated at one side close to the outlet 14 through the depth difference of the stepped regions 17, so that heat exchange at the outlet 14 is affected.
The IGBT chip 22 is an insulated gate bipolar transistor, which is responsible for high frequency switching and power control. The FRD chip 23 is a fast recovery diode for freewheeling and reverse voltage protection. The NTC resistor 24 is a negative temperature coefficient resistor that is used to monitor the module temperature and feed it back to the control system. The Pin needle 25 is connected with external equipment as a signal end of the power module and is used for transmitting control signals and data.
The IGBT chip 22, the FRD chip 23, the NTC resistor 24, and the Pin needle 25 are fixed to the upper copper layer of the ceramic copper-clad substrate 21 by solder, for example, by soldering with solder such as a tin plate or solder paste to the upper copper layer of the ceramic copper-clad substrate 21. The ceramic copper-clad substrate 21, the IGBT chip 22, the FRD chip 23, and the NTC resistor 24 are connected to each other by bonding wires, thereby realizing communication inside the chip assembly 20.
The injection molded housing 30 is used for carrying the above functional modules, so that the housing 30 is provided with various functional structures, such as screws, bolts, through holes, etc., to complete the installation and assembly of the above functional modules, which can be set according to actual needs, and will not be described in detail herein. The injection molding shell 30 is circumferentially arranged around the chip assembly 20, and silica gel is filled between the injection molding shell 30 and the chip assembly 20 so as to realize electrical isolation.
Compared with the prior art, the flow channels 15 of the heat dissipation device for the power device are V-shaped, the opening directions of the two flow channels 15 are opposite, and the inclination angles of the extending directions of the two ends of the flow channels 15 and the horizontal direction are 5 degrees to 35 degrees, so that the flow channels 15 are communicated with the grooves 12 and the inlet 13 or the outlet 14 at an inclination upward angle, fluid is guided to flow upwards by the inclination angle, liquid accumulation or layering caused by horizontal flow is avoided, and cooling liquid can pass through the flow channels more smoothly in the flowing process. The distance between the plurality of stepped regions 17 and the heat radiating substrate 16 increases stepwise in a direction from the inlet 13 toward the outlet 14. The arrangement direction of the plurality of stepped regions 17 is parallel to the flow direction of the fluid. The distance from the stepped region 17 to the heat radiating substrate 16 is gradually increased as the cooling liquid flows, so that more cooling liquid is gradually contained. The volume capable of containing cooling liquid is changed through the stepped areas 17 with different heights, the heat exchange areas of the heat dissipation columns 18 with different lengths are changed, the heat dissipation effect balance of different areas is guaranteed, and the problem that the heat exchange effect is poor due to the fact that the temperature of the cooling liquid is relatively high when flowing to an outlet along with heat exchange is avoided.
The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention, and any modifications, equivalent substitutions or improvements within the spirit of the present invention are intended to be covered by the claims of the present invention.
Claims (9)
1. The heat dissipation device for the power device is characterized by comprising a heat dissipation component, a chip component arranged on the heat dissipation component and an injection molding shell arranged on the chip component, wherein the heat dissipation component comprises a base, a groove formed in the base, an inlet formed in the bottom of the base, an outlet formed in the bottom of the base, two flow channels respectively communicated with the groove and the inlet or the outlet, a heat dissipation substrate arranged on the base, and at least two stepped areas arranged in the groove, wherein the inlet and the outlet are respectively arranged on two opposite sides of the bottom of the base, the flow channels are in a V shape, the opening directions of the two flow channels are opposite, the bending positions of the flow channels are arranged, a plurality of heat dissipation columns are arranged on the end face of the heat dissipation substrate facing the groove in an array manner, the stepped areas are positioned on the end face of the groove facing the base, the stepped areas are arranged on the end face of the heat dissipation substrate, the stepped areas are arranged between the stepped areas in a plurality of the heat dissipation substrate and are arranged in parallel to the direction of the heat dissipation areas, and the stepped areas are arranged in the same in the direction of the heat dissipation area.
2. The heat dissipating device for a power device of claim 1 wherein each row of said heat dissipating studs is arranged at equal intervals, two adjacent rows of said heat dissipating studs are arranged at equal intervals, each column of said heat dissipating studs is arranged at equal intervals, and two adjacent columns of said heat dissipating studs are arranged at equal intervals.
3. The heat dissipating device for a power device of claim 1 wherein the arc of the end of the heat dissipating post near the inlet is greater than the arc of the end of the heat dissipating post near the outlet, the end of the heat dissipating post near the inlet is a semi-circular end, the end of the heat dissipating post near the outlet is a semi-elliptical end, and the cross section of the heat dissipating post is in the shape of a drop of a droplet.
4. The heat sink of claim 1, wherein the bend radius R of the flow channel is 0.5mm < R <5mm.
5. The heat sink of claim 1, wherein the extending direction of the end of the flow channel communicating with the recess is at an angle of 5 DEG to 35 DEG with respect to the horizontal direction.
6. The heat sink for a power device of claim 1, wherein the die assembly comprises a plurality of ceramic copper clad substrates, a plurality of IGBT dies disposed on the ceramic copper clad substrates, a plurality of FRD dies disposed on the ceramic copper clad substrates, an NTC resistor disposed on the ceramic copper clad substrates, and a plurality of Pin pins disposed on the ceramic copper clad substrates.
7. The heat dissipating device for a power device of claim 6 wherein the ceramic copper clad substrate has a structure comprising copper layers on the upper and lower surfaces and an insulating layer in the middle, wherein the insulating layer is a ceramic, and specifically comprises at least one of an AlO ceramic layer, an AlO doped zirconia ceramic layer, an AlN ceramic layer, a GAN ceramic layer and a SiN ceramic layer.
8. The heat dissipating device for a power device of claim 6 wherein the number of ceramic copper clad substrates is the same as the number of step areas and the positions thereof correspond to each other.
9. The heat sink of claim 1, wherein the molded housing is disposed around the die assembly and a silicone is filled between the molded housing and the die assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202510617970.4A CN120127074B (en) | 2025-05-14 | 2025-05-14 | Heat abstractor for power device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202510617970.4A CN120127074B (en) | 2025-05-14 | 2025-05-14 | Heat abstractor for power device |
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| CN120127074A CN120127074A (en) | 2025-06-10 |
| CN120127074B true CN120127074B (en) | 2025-08-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202510617970.4A Active CN120127074B (en) | 2025-05-14 | 2025-05-14 | Heat abstractor for power device |
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| CN208690244U (en) * | 2018-09-19 | 2019-04-02 | 江苏宏微科技股份有限公司 | Intercooled two-sided power module architectures |
| CN119234306A (en) * | 2022-05-20 | 2024-12-31 | Lg麦格纳电子动力总成有限公司 | Double-sided cooling type power semiconductor package |
| WO2025039247A1 (en) * | 2023-08-24 | 2025-02-27 | 株洲中车时代电气股份有限公司 | Heat dissipation apparatus, power module, and electronic product |
| CN220753417U (en) * | 2023-09-11 | 2024-04-09 | 中国长安汽车集团有限公司 | Heat dissipation substrate structure of power module |
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| CN116110862A (en) * | 2023-01-13 | 2023-05-12 | 无锡星驱动力科技有限公司 | A radiator and power module |
| CN117238868A (en) * | 2023-04-03 | 2023-12-15 | 浙江琦玛科技有限公司 | Patch heat dissipation high-power motor controller |
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