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CN120165288A - A multi-wavelength solid-state laser based on Ho-doped crystal and its operation method - Google Patents

A multi-wavelength solid-state laser based on Ho-doped crystal and its operation method Download PDF

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CN120165288A
CN120165288A CN202510333753.2A CN202510333753A CN120165288A CN 120165288 A CN120165288 A CN 120165288A CN 202510333753 A CN202510333753 A CN 202510333753A CN 120165288 A CN120165288 A CN 120165288A
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crystal
doped
fan
doped crystal
shaped
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王宇
朱梓曜
孟祥达
李立
�田�浩
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Harbin Institute of Technology Shenzhen
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Harbin Institute of Technology Shenzhen
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08086—Multiple-wavelength emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0078—Frequency filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1631—Solid materials characterised by a crystal matrix aluminate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1645—Solid materials characterised by a crystal matrix halide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1645—Solid materials characterised by a crystal matrix halide
    • H01S3/1653—YLiF4(YLF, LYF)

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Lasers (AREA)

Abstract

A multi-wavelength solid laser based on Ho doped crystal and an operation method thereof belong to the technical field of optoelectronic device manufacturing and optical engineering laser. The multi-wavelength solid laser comprises a 1940nm pump source, wherein the 1940nm pump source is connected with an optical fiber coupling lens group through an optical fiber, a micro lens array, an input plane mirror, a Ho doped mixed crystal, an output plane mirror and a 1900nm narrow-band filter plate are sequentially arranged on the right side of the optical fiber coupling lens group along an optical path, and the Ho doped mixed crystal is formed by combining a cylindrical doped crystal at the center position with a first ring-shaped doped crystal, a second ring-shaped doped crystal, a third ring-shaped doped crystal and a fourth ring-shaped doped crystal, wherein the first ring-shaped doped crystal, the second ring-shaped doped crystal, the third ring-shaped doped crystal and the fourth ring-shaped doped crystal are surrounded outside the cylindrical doped crystal. The invention consists of a pumping source, a laser which excites multi-wavelength laser, and has great significance for wavelength division multiplexing scenes such as optical fiber communication, optical calculation and the like.

Description

Ho doped crystal-based multi-wavelength solid laser and operation method thereof
Technical Field
The invention belongs to the technical field of optoelectronic device manufacturing and optical engineering laser, and particularly relates to a multi-wavelength solid laser based on Ho doped crystals and an operation method thereof.
Background
Wavelength Division Multiplexing (WDM) technology is rapidly expanding to various departments of the information industry as a core technology in the leading edge fields of optical fiber communication, optical computation, and the like. The high-efficiency and high-integration laser output requirement of the laser device provides a great challenge for the modern laser technology. However, due to the inherent absorption and emission spectrum limitations of laser crystals, conventional lasers are mostly limited to single wavelength operation, the multi-wavelength signal generating capability is limited to the number of lasers, and moreover, due to the complex tuning characteristics of the individual lasers, it is difficult to realize stable multi-wavelength output, which poses serious challenges in the field of wide-application wavelength division multiplexing technologies such as photoelectric integration (such as on-chip computing and data interconnection) and optical fiber communication.
The multi-wavelength laser with the authorized bulletin number of CN203674555U is formed by arranging a green laser module, a red laser module and a blue laser module in parallel, wherein the centers of the three modules form an equilateral triangle, and the emergent light of the three modules has the same divergence angle and the same spot size. And different combinations are adopted to light the red, blue and green laser modules, so that lasers with different colors can be obtained. But only outputs laser light of three colors of red, green and blue.
The 'multi-wavelength laser' with the authorized bulletin number of CN112928588B utilizes a resonant cavity and cavity mirror coating process of an imaging structure, so that the laser with different wavelengths has different distribution areas in a gain medium, and the competition of each wavelength is avoided. Films with different reflectivities aiming at different wavelengths are plated, so that the loss of each wavelength in each film plating area is different, the condition that only one wavelength in different film plating areas starts to vibrate is met, and the laser outputs laser with different wavelengths simultaneously is realized. However, the preparation process involves a coating process of different gain media, and the process is extremely complex when the preparation process is applied to the gain media, and also involves a series of problems such as whether the corresponding gain media have mature coating process or not, and that different wavelength outputs need to correspond to different pump sources.
Disclosure of Invention
The invention aims to solve the problems of simpler development operation flow and higher use value of a multi-wavelength solid laser, and provides a multi-wavelength solid laser based on Ho doped crystals and an operation method thereof.
In order to achieve the above purpose, the present invention is realized by the following technical scheme:
A multi-wavelength solid laser based on Ho doped crystal comprises a 1940nm pumping source, an optical fiber coupling lens group, a micro lens array, an input plane mirror, a Ho doped mixed crystal, an output plane mirror and a 1900nm narrow-band filter;
The 1940nm pump source is connected with an optical fiber coupling lens group through an optical fiber, and a micro lens array, an input plane mirror, a Ho doped mixed crystal, an output plane mirror and a 1900nm narrow-band filter are sequentially arranged on the right side of the optical fiber coupling lens group along an optical path;
The Ho doped mixed crystal is formed by combining a cylindrical doped crystal at the center position, a first fan-shaped annular doped crystal, a second fan-shaped annular doped crystal, a third fan-shaped annular doped crystal and a fourth fan-shaped annular doped crystal which are surrounded outside the cylindrical doped crystal, wherein the cylindrical doped crystal is one of Ho: YAP crystals which are cut in different axial directions, and the first fan-shaped annular doped crystal, the second fan-shaped annular doped crystal, the third fan-shaped annular doped crystal and the fourth fan-shaped annular doped crystal are several of Ho: LLF crystals, ho: YAP crystals and Ho: YLF crystals which are cut in different axial directions;
Or the Ho doped mixed crystal is replaced by a first fan-shaped doped crystal, a second fan-shaped doped crystal, a third fan-shaped doped crystal and a fourth fan-shaped doped crystal which are formed by combining, wherein the first fan-shaped doped crystal, the second fan-shaped doped crystal, the third fan-shaped doped crystal and the fourth fan-shaped doped crystal are different in axial cutting, and the Ho:LLF crystal, the Ho:YAP crystal and the Ho:YLF crystal are combined together.
Further, the surface of the input plane mirror is plated with a 2050nm narrow-band reflecting film, and the surface of the output plane mirror is plated with a 2050nm 5% transmitting film.
Further, in the Ho doping mixed crystal, the cylindrical doping crystal is an a-axis cut Ho:YAP crystal, the first fan-shaped ring-shaped doping crystal is a c-axis cut Ho:LLF crystal, the second fan-shaped ring-shaped doping crystal is a c-axis cut Ho:YAP crystal, the third fan-shaped ring-shaped doping crystal is a c-axis cut Ho:YLF crystal, and the fourth fan-shaped ring-shaped doping crystal is a b-axis cut Ho:YAP crystal.
Further, in the Ho doped mixed crystal (6), the first fan-shaped doped crystal is a c-axis cut Ho: LLF crystal, the second fan-shaped doped crystal is a c-axis cut Ho: YAP crystal, the third fan-shaped doped crystal is a c-axis cut Ho: YLF crystal, and the fourth fan-shaped doped crystal is a b-axis cut Ho: YLF crystal.
Further, the angle of each of the Ho doped mixed crystals is in the range of 0-90 degrees.
The operation method of the multi-wavelength solid laser based on the Ho doped crystal is realized by the multi-wavelength solid laser based on the Ho doped crystal, and comprises the following steps:
The pump source of 1940nm outputs pump light, the pump light is transmitted into the optical fiber coupling lens group through the optical fiber to be coupled and then outputs parallel light, the parallel light is split and focused through the micro lens array and then passes through the input plane mirror, and light of 1940nm wave band is obtained and converged on the front end face of the Ho doped mixed crystal;
after different doped crystals in the Ho doped mixed crystal absorb the input 1940nm wave band light, outputting different wave band light;
light in different wave bands is transmitted through the output plane mirror, and then filtered through a 1900nm narrow-band filter, so that 2 mu m wave band lasers in different frequency ranges are obtained.
Further, based on the crystal rotation angle of 0-90 ° in different doped crystals, the polarization direction of each input laser beam and the axial direction of the focused crystal with different rotation angles are different, when an angle variation α is generated between the polarization direction of the input laser beam and the principal axis of the crystal, the wavelength variation of sigma polarization state and pi polarization state output by the doped crystal is caused, and the obtained expression is:
λσ(θ1)＝λσ(θ0)+Δλσ(α) (1)
λπ(θ1)＝λπ(θ0)+Δλπ(α) (2)
Wherein, theta 0 is defined as an initial included angle between the polarization direction of the input light and the principal axis of the crystal, the included angle becomes theta 1,λσ(θ0) and lambda σ(θ1) are respectively defined as the central wavelengths of the sigma polarization states output when the included angles are theta 0 and theta 1, lambda π(θ0) and lambda π(θ1) are respectively defined as the central wavelengths of pi polarization states output when the included angles are theta 0 and theta 1, and delta lambda σ (alpha) and delta lambda π (alpha) represent the central wavelength variation of the sigma polarization states and the central wavelength variation of pi polarization states after alpha rotation;
the refractive index relationship of the a-axis and c-axis planes of the doped crystal is expressed as:
Wherein n a and n c are refractive indices of the a-axis and the c-axis respectively, and n c (θ) is the refractive index when the polarization direction of the input light and the principal axis angle θ of the crystal are included;
based on the output light being restricted by the standing wave condition of the resonant cavity between the input mirror and the output mirror, the obtained expression is:
2kL'=2mπ (4)
L'=n0L1+nc(θ)L2 (5)
Wherein k is the mode of wave vector, L' is total optical path, n 0L1 and n c(θ)L2 respectively represent optical paths outside and inside the crystal in the resonant cavity, and m is a first positive integer, L 1 and L 2 respectively represent propagation paths of light outside and inside the crystal when the resonant cavity oscillates;
combining formula (3) with formula (4) and formula (5) gives:
when the angle θ changes α, the equation (6) changes as:
where k 'is the modulus of the changed wave vector and m' is a second positive integer;
introducing a wavelength lambda to formula (7) gives the expression:
Wherein m 1 'and m 2' are respectively a third positive integer, a fourth positive integer, and θ π0 and θ σ0 respectively represent the included angles of the outputted sigma polarization and pi polarization and the crystal main axis;
based on the formula (8) and the formula (9), the variables Deltalambda π(α)/Δλσ (alpha) and m 1'/m2 'are also changed in a synergic manner after alpha is introduced, when the polaroid is rotated, the refractive index n c (theta) is changed along with the change of theta, so that the optical path L' is changed, the mode k of a wave vector is changed along with the change of the wave vector in order to meet the standing wave condition, namely the wavelength lambda is changed, and under the condition of the formula (8) and the formula (9), the multi-wavelength solid laser based on Ho doped crystal outputs 2 mu m wave band lasers in different frequency ranges.
The above derivation is based on c-axis cutting of Ho: LLF crystals, and the theoretical model is equally applicable to Ho: YLF, ho: YAP, with only the difference between outputting single-wavelength laser light and dual-wavelength laser light.
A multi-wavelength solid laser based on Ho doped crystal comprises an LD pumping source of 795nm, an optical fiber coupling lens group, a micro lens array, an input plane mirror, tm, YAP crystal, ho doped mixed crystal, an output plane mirror, a 1000nm narrow-band filter and a 2000nm narrow-band filter;
The LD pumping source with the wavelength of 795nm is connected with an optical fiber coupling lens group through an optical fiber, and a micro lens array, an input plane mirror, a Tm (Tm) YAP crystal, a Ho doped mixed crystal, an output plane mirror, a 1000nm narrow-band filter and a 2000nm narrow-band filter are sequentially arranged on the right side of the optical fiber coupling lens group along an optical path;
The Ho doped mixed crystal is formed by combining a cylindrical doped crystal at the center position, a first fan-shaped annular doped crystal, a second fan-shaped annular doped crystal, a third fan-shaped annular doped crystal and a fourth fan-shaped annular doped crystal which are surrounded outside the cylindrical doped crystal, wherein the cylindrical doped crystal is one of Ho: YAP crystals which are cut in different axial directions, and the first fan-shaped annular doped crystal, the second fan-shaped annular doped crystal, the third fan-shaped annular doped crystal and the fourth fan-shaped annular doped crystal are several of Ho: LLF crystals, ho: YAP crystals and Ho: YLF crystals which are cut in different axial directions;
Or the Ho doped mixed crystal is formed by combining a first fan-shaped doped crystal, a second fan-shaped doped crystal, a third fan-shaped doped crystal and a fourth fan-shaped doped crystal, wherein the first fan-shaped doped crystal, the second fan-shaped doped crystal, the third fan-shaped doped crystal and the fourth fan-shaped doped crystal are different in axial cutting, and the Ho:LLF crystal, the Ho:YAP crystal and the Ho:YLF crystal are combined together.
Further, the surface of the input plane mirror is plated with a 2050nm narrow-band reflecting film, and the surface of the output plane mirror is plated with a 2050nm 5% transmitting film.
Further, the cylindrical doped crystal in the Ho doped mixed crystal is an a-axis cut Ho:YAP crystal, the first fan-shaped annular doped crystal is a c-axis cut Ho:LLF crystal, the second fan-shaped annular doped crystal is a c-axis cut Ho:YAP crystal, the third fan-shaped annular doped crystal is a c-axis cut Ho:YLF crystal, the fourth fan-shaped annular doped crystal is a b-axis cut Ho:YAP crystal, and the angle range of each doped crystal in the Ho doped mixed crystal is 0-90 degrees.
The invention has the beneficial effects that:
the multi-wavelength solid laser based on the Ho doped crystal creatively designs a special mixed laser crystal, and utilizes one pump and one optical cavity to output very multiple lasers with different wavelengths, thereby efficiently realizing multi-wavelength output.
According to the Ho doped crystal-based multi-wavelength solid laser, wavelength output switching can be achieved through deduction and analysis of angle tuning, an arc-shaped structure is innovatively designed, different crystal compositions and different angle arrangements are utilized, and multi-wavelength output is achieved in a wide-band range. Through different tangential output wavelengths, the combination of different tangential directions and different angles can be combined to realize multi-wavelength output.
According to the multi-wavelength solid laser based on the Ho doped crystal, disclosed by the invention, all components of the Ho doped mixed crystal are utilized for efficiently absorbing 1940 nm-band light, and multi-wavelength output is realized by utilizing one laser broadband through the Ho doped crystal combination of different substrates.
The Ho doped crystal-based multi-wavelength solid laser provided by the invention is very suitable for being used as a basic unit of a wavelength division multiplexing light source because the orthogonal polarization dual-wavelength solid laser can emit two laser beams with fixed wavelength difference. And the dual wavelength laser has incoherent characteristics, and each wavelength can carry different information efficiently, so that the efficiency of complex information transmission and processing is remarkably improved. Therefore, when integrating a plurality of orthogonal polarized dual wavelength lasers with strong absorption effect on the same pump, the light source of the system has extremely high efficiency and highly integrated multi-wavelength output capability. By utilizing the strong absorption characteristics of different substrate materials doped with Ho for the same pumping source (1940 nm), and the frequency modulation methods such as angle tuning, the laser with the capability of outputting ultra-multiple wavelength laser is designed, and the contradiction between the multi-wavelength output and high integration level of the laser is solved. The invention is characterized in that only one pumping source and one laser are needed to excite multi-wavelength laser, which has great significance for optical fiber communication, optical computation and other wavelength division multiplexing scenes and greatly compresses the partial volume of the light source.
The multi-wavelength solid laser based on the Ho doped crystal has the advantage that the multi-wavelength output performance is verified through theoretical analysis and experiments. The invention not only provides a new thought for coping with the challenges of the current multi-wavelength laser source, but also lays a foundation for future innovations in the related fields of optical communication, optical calculation and the like.
Drawings
FIG. 1 is a schematic diagram of a first structure of a Ho doped crystal-based multi-wavelength solid laser constructed based on a 1940nm pump source according to the present invention;
fig. 2 is a schematic structural diagram of a Ho-doped mixed crystal and an axial schematic diagram of a small crystal with different rotation angles according to the present invention, wherein a is a schematic structural diagram of the Ho-doped mixed crystal and b is an axial schematic diagram of the small crystal with different rotation angles;
FIG. 3 is a schematic view of a c-axis cut portion of a Ho doped hybrid crystal of the present invention;
FIG. 4 is a schematic view of an a-axis cut portion of a Ho doped hybrid crystal of the present invention;
FIG. 5 is a graph of the refractive index ellipsometry of LLF crystals for c-axis cut Ho according to the present invention;
FIG. 6 is a schematic diagram II of a Ho doped mixed crystal according to the present invention;
FIG. 7 is a schematic diagram of a structure of a Ho doped crystal-based multi-wavelength solid laser constructed based on 795nm pump source according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail below with reference to the accompanying drawings and detailed description. It should be understood that the embodiments described herein are for purposes of illustration only and are not intended to limit the invention, i.e., the embodiments described are merely some, but not all, of the embodiments of the invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein can be arranged and designed in a wide variety of different configurations, and the present invention can have other embodiments as well.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.
For further understanding of the invention, the following detailed description is to be taken in conjunction with the accompanying drawings 1-7, in which:
example 1:
a multi-wavelength solid laser based on Ho doped crystal comprises a 1940nm pump source 1, an optical fiber 2, an optical fiber coupling lens group 3, a micro lens array 4, an input plane mirror 5, a Ho doped mixed crystal 6, an output plane mirror 7 and a 1900nm narrow-band filter 8;
the 1940nm pump source 1 is connected with an optical fiber coupling lens group 3 through an optical fiber 2, and a micro lens array 4, an input plane mirror 5, a Ho doped mixed crystal 6, an output plane mirror 7 and a 1900nm narrow-band filter 8 are sequentially arranged on the right side of the optical fiber coupling lens group 3 along an optical path;
The Ho doped mixed crystal 6 is formed by combining a cylindrical doped crystal 16 at the center position with a first fan-shaped annular doped crystal 12, a second fan-shaped annular doped crystal 13, a third fan-shaped annular doped crystal 14 and a fourth fan-shaped annular doped crystal 15 which are surrounded outside the cylindrical doped crystal 16, the cylindrical doped crystal 16 is one of Ho: YAP crystals which are cut in different axial directions, and the first fan-shaped annular doped crystal 12, the second fan-shaped annular doped crystal 13, the third fan-shaped annular doped crystal 14 and the fourth fan-shaped annular doped crystal 15 are combined together in different axial directions.
Further, the surface of the input plane mirror 5 is plated with a 2050nm narrow-band reflective film, and the surface of the output plane mirror 7 is plated with a 2050nm 5% transmissive film.
Further, in the Ho-doped mixed crystal 6, the cylindrical doped crystal 16 is an a-axis cut Ho: YAP crystal, the first fan-shaped ring doped crystal 12 is a c-axis cut Ho: LLF crystal, the second fan-shaped ring doped crystal 13 is a c-axis cut Ho: YAP crystal, the third fan-shaped ring doped crystal 14 is a c-axis cut Ho: YLF crystal, and the fourth fan-shaped ring doped crystal 15 is a b-axis cut Ho: YAP crystal.
Further, the angle of each doped crystal in the Ho-doped mixed crystal 6 is in the range of 0 to 90 °. In addition, ho in the Ho doped mixed crystal is LLF crystal, ho in YLF crystal and Ho in YAP crystal, the hardness is high, conventional mechanical cutting or laser cutting can be realized, heat sinks with required shapes can be customized when the Ho doped mixed crystal is combined, the crystal is placed in the heat sink to finish crystal manufacturing, one method of crystal cutting is to place the crystal in the heat sink in a spliced mode according to a left pattern in a second drawing after all the crystal is cut according to a c-axis, the other method is to cut small crystals along different included angles with the c-axis on a large crystal cut by the c-axis instead of the c-axis, the cutting direction is defined as 'c-5 DEG cutting', 'c-10 DEG cutting', 'C-theta cutting' and the like, and the crystal can be directly spliced and placed in the heat sink after the crystal is cut.
Further, the micro lens array is composed of micro convex lenses, the convex lens positions of the micro convex lenses correspond to each small crystal in the Ho doped mixed crystal, each beam of laser after beam splitting is ensured to be focused on the end face of the small crystal, and the placement position of the Ho doped crystal is adjusted according to the focal length of the micro lens array during operation.
Further, the optical fiber coupling lens group 3 is used for coupling pump light in the optical fiber and outputting parallel light;
Further, the reason why the Ho-doped mixed crystal 6 outputs the multi-wavelength laser is that, first, three Ho-doped crystals all absorb the light intensity of 1940nm band and output the laser of different bands, ho: LLF dual-wavelength output band is near 2060nm, ho: YAP output band is near 2130nm, ho: YLF output band is near 2050nm, so four kinds of crystals output the laser of four bands due to the difference of the base material. Secondly, for any one of the four c-axis cut crystals, taking a c-axis cut Ho: LLF crystal as an example, the polarization direction of each beam of pumping light output by the microlens array is the same, and the polarization state of each beam of laser light and the axial direction of the focused small crystal are different according to the rotation angle (0-90 degrees) of each small crystal constituting Ho: LLF part.
In order to verify the influence of crystal rotation on wavelength change in theory, taking a c-axis cut Ho: LLF crystal as an example, table 1 shows the wavelength change of output laser under angle tuning of 13 DEG to 80 DEG, which is the same as the result of theoretical derivation, wherein pi polarization wavelength change range 2053-2056.3nm is output in the horizontal direction, sigma polarization wavelength change range 2063.1-2065.7nm is output in the vertical direction, and the test result verifies the feasibility of a multi-wavelength solid laser based on Ho doped crystal.
Table 1:
Angle/polarization Pi polarized wavelength (nm) Sigma polarization wavelength (nm)
13° 2052 2063.9
27° 2052.6 2064.2
45° 2055.3 2065
55° 2056.3 2065.7
69° 2053.4 2064.7
80° 2052.1 2063
The multi-wavelength solid laser based on Ho doped crystal of the embodiment creatively carries out special design on a laser crystal, and utilizes the high absorptivity of each part of mixed crystal to a YAP output beam to output a series of 2 mu m wave band lasers with different wavelengths according to different crystal substrates, different rotation angles and different cutting directions.
Example 2:
An operation method of a multi-wavelength solid laser based on a Ho doped crystal is realized by the multi-wavelength solid laser based on a Ho doped crystal according to embodiment 1, and includes the following steps:
The pump source of 1940nm outputs pump light, the pump light is transmitted into the optical fiber coupling lens group through the optical fiber to be coupled and then outputs parallel light, the parallel light is split and focused through the micro lens array and then passes through the input plane mirror, and light of 1940nm wave band is obtained and converged on the front end face of the Ho doped mixed crystal;
after different doped crystals in the Ho doped mixed crystal absorb the input 1940nm wave band light, outputting different wave band light;
light in different wave bands is transmitted through the output plane mirror, and then filtered through a 1900nm narrow-band filter, so that 2 mu m wave band lasers in different frequency ranges are obtained.
Further, based on the crystal rotation angle of 0-90 ° in different doped crystals, the polarization direction of each input laser beam and the axial direction of the focused crystal with different rotation angles are different, when an angle variation α is generated between the polarization direction of the input laser beam and the principal axis of the crystal, the wavelength variation of sigma polarization state and pi polarization state output by the doped crystal is caused, and the obtained expression is:
λσ(θ1)＝λσ(θ0)+Δλσ(α) (1)
λπ(θ1)＝λπ(θ0)+Δλπ(α) (2)
Wherein, theta 0 is defined as an initial included angle between the polarization direction of the input light and the principal axis of the crystal, the included angle becomes theta 1,λσ(θ0) and lambda σ(θ1) are respectively defined as the central wavelengths of the sigma polarization states output when the included angles are theta 0 and theta 1, lambda π(θ0) and lambda π(θ1) are respectively defined as the central wavelengths of pi polarization states output when the included angles are theta 0 and theta 1, and delta lambda σ (alpha) and delta lambda π (alpha) represent the central wavelength variation of the sigma polarization states and the central wavelength variation of pi polarization states after alpha rotation;
the refractive index relationship of the a-axis and c-axis planes of the doped crystal is expressed as:
Wherein n a and n c are refractive indices of the a-axis and the c-axis respectively, and n c (θ) is the refractive index when the polarization direction of the input light and the principal axis angle θ of the crystal are included;
based on the output light being restricted by the standing wave condition of the resonant cavity between the input mirror and the output mirror, the obtained expression is:
2kL'=2mπ (4)
L'=n0L1+nc(θ)L2 (5)
Wherein k is the mode of wave vector, L' is total optical path, n 0L1 and n c(θ)L2 respectively represent optical paths outside and inside the crystal in the resonant cavity, and m is a first positive integer, L 1 and L 2 respectively represent propagation paths of light outside and inside the crystal when the resonant cavity oscillates;
combining formula (3) with formula (4) and formula (5) gives:
when the angle θ changes α, the equation (6) changes as:
where k 'is the modulus of the wave vector after the change and m' is a second positive integer;
introducing a wavelength lambda to formula (7) gives the expression:
Wherein m 1 'and m 2' are respectively a third positive integer, a fourth positive integer, and θ π0 and θ σ0 respectively represent the included angles of the outputted sigma polarization and pi polarization and the crystal main axis;
Based on the formula (8) and the formula (9), the variables Deltalambda π(α)/Δλσ (alpha) and m 1'/m2 'are also changed in a synergic manner after alpha is introduced, when the polaroid is rotated, the refractive index n c (theta) is changed along with the change of theta, so that the optical path L' is changed, the mode k of a wave vector is changed along with the change of the wave vector in order to meet the standing wave condition, namely the wavelength lambda is changed, the theory model is applicable to Ho: LLF crystals based on c-axis cutting, and the theory model is applicable to Ho: YLF and Ho: YAP, only the difference between single-wavelength laser and dual-wavelength laser exists, and under the condition of meeting the formula (8) and the formula (9), the multi-wavelength solid laser based on Ho doped crystals outputs 2 mu m band lasers in different frequency ranges.
From the above derivation, it is known that, due to the special design of the Ho doped mixed crystal, the refractive index n c (θ) changes with θ, thereby changing the optical path length L'. In order to meet standing wave conditions, the mode k of the wave vector will vary with it, i.e. the wavelength λ will vary. The theoretical model is also applicable to doped crystals comprising Ho: YLF, ho: YAP, and only the difference between outputting single-wavelength laser light and dual-wavelength laser light exists, that is, each part of the Ho doped mixed crystal outputs laser light of different wavelengths due to the change of polarization direction, even the same crystal, and each part of the fan-shaped structure outputs laser light of different wavelengths due to the different rotation angles.
Example 3:
The difference between this embodiment and embodiment 1 is that the Ho-doped mixed crystal 6 in this embodiment is formed by combining a first fan-shaped doped crystal 18, a second fan-shaped doped crystal 19, a third fan-shaped doped crystal 20, and a fourth fan-shaped doped crystal 21, and the first fan-shaped doped crystal 18, the second fan-shaped doped crystal 19, the third fan-shaped doped crystal 20, and the fourth fan-shaped doped crystal 21 are several kinds of Ho: LLF crystals, ho: YAP crystals, and Ho: YLF crystals that are cut in different axial directions.
Further, in the Ho-doped mixed crystal 6, the first fan-shaped doped crystal 18 is a c-axis cut Ho: LLF crystal, the second fan-shaped doped crystal 19 is a c-axis cut Ho: YAP crystal, the third fan-shaped doped crystal 20 is a c-axis cut Ho: YLF crystal, and the fourth fan-shaped doped crystal 21 is an a-axis cut Ho: YLF crystal.
Example 4:
The difference between this embodiment and embodiment 1 is that the 1940nm pump source 1 in this embodiment is replaced by a 795nm LD pump source 9, the 795nm LD pump source 9 is connected to the optical fiber coupling lens group 3 through the optical fiber 2, and the right side of the optical fiber coupling lens group 3 is sequentially provided with a micro lens array 4, an input plane mirror 5, a Tm: YAP crystal 17, a Ho doped mixed crystal 6, an output plane mirror 7, a 1000nm narrow band filter 10, and a 2000nm narrow band filter 11 along the optical path.
It is noted that relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
Although the application has been described above with reference to specific embodiments, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the application. In particular, the features of the disclosed embodiments may be combined with each other in any manner so long as there is no structural conflict, and the exhaustive description of these combinations is not given in this specification solely for the sake of brevity and resource saving. Therefore, it is intended that the application not be limited to the particular embodiments disclosed herein, but that the application will include all embodiments falling within the scope of the appended claims.

Claims (10)

1.一种基于Ho掺杂晶体的多波长固体激光器，其特征在于，包括1940nm的泵浦源(1)、光纤(2)，光纤耦合透镜组(3)、微透镜阵列(4)、输入平面镜(5)、Ho掺杂混合晶体(6)、输出平面镜(7)、1900nm窄带滤波片(8)；1. A multi-wavelength solid-state laser based on Ho-doped crystal, characterized by comprising a 1940nm pump source (1), an optical fiber (2), an optical fiber coupling lens group (3), a microlens array (4), an input plane mirror (5), a Ho-doped mixed crystal (6), an output plane mirror (7), and a 1900nm narrow-band filter (8); 所述1940nm的泵浦源(1)通过光纤(2)连接光纤耦合透镜组(3)，所述光纤耦合透镜组(3)的右侧沿光路依次排列设置有微透镜阵列(4)、输入平面镜(5)、Ho掺杂混合晶体(6)、输出平面镜(7)、1900nm窄带滤波片(8)；The 1940 nm pump source (1) is connected to a fiber coupling lens group (3) via an optical fiber (2); a micro lens array (4), an input plane mirror (5), a Ho-doped mixed crystal (6), an output plane mirror (7), and a 1900 nm narrowband filter (8) are sequentially arranged on the right side of the fiber coupling lens group (3) along the optical path; 所述Ho掺杂混合晶体(6)由中心位置的圆柱形掺杂晶体(16)和包围在圆柱形掺杂晶体(16)外的第一扇环形掺杂晶体(12)、第二扇环形掺杂晶体(13)、第三扇环形掺杂晶体(14)、第四扇环形掺杂晶体(15)组合而成，所述圆柱形掺杂晶体(16)为不同轴向切割的Ho:YAP晶体中的一种，所述第一扇环形掺杂晶体(12)、第二扇环形掺杂晶体(13)、第三扇环形掺杂晶体(14)、第四扇环形掺杂晶体(15)为不同轴向切割的Ho:LLF晶体、Ho:YAP晶体、Ho:YLF晶体的几种组合在一起；The Ho-doped mixed crystal (6) is composed of a cylindrical doped crystal (16) at a central position and a first fan-shaped doped crystal (12), a second fan-shaped doped crystal (13), a third fan-shaped doped crystal (14), and a fourth fan-shaped doped crystal (15) surrounding the cylindrical doped crystal (16); the cylindrical doped crystal (16) is one of Ho:YAP crystals cut in different axial directions; the first fan-shaped doped crystal (12), the second fan-shaped doped crystal (13), the third fan-shaped doped crystal (14), and the fourth fan-shaped doped crystal (15) are a combination of Ho:LLF crystals, Ho:YAP crystals, and Ho:YLF crystals cut in different axial directions; 或者所述Ho掺杂混合晶体(6)为由第一扇形掺杂晶体(18)、第二扇形掺杂晶体(19)、第三扇形掺杂晶体(20)、第四扇形掺杂晶体(21)组合而成，第一扇形掺杂晶体(18)、第二扇形掺杂晶体(19)、第三扇形掺杂晶体(20)、第四扇形掺杂晶体(21)为不同轴向切割的Ho:LLF晶体、Ho:YAP晶体、Ho:YLF晶体中的几种组合在一起。Alternatively, the Ho-doped mixed crystal (6) is composed of a first fan-shaped doped crystal (18), a second fan-shaped doped crystal (19), a third fan-shaped doped crystal (20), and a fourth fan-shaped doped crystal (21), wherein the first fan-shaped doped crystal (18), the second fan-shaped doped crystal (19), the third fan-shaped doped crystal (20), and the fourth fan-shaped doped crystal (21) are a combination of several of Ho:LLF crystals, Ho:YAP crystals, and Ho:YLF crystals cut in different axes. 2.根据权利要求1所述的一种基于Ho掺杂晶体的多波长固体激光器，其特征在于，所述输入平面镜(5)的表面镀有2050nm窄带反射膜，所述输出平面镜(7)的表面镀2050nm的5％透射膜。2. A multi-wavelength solid-state laser based on Ho-doped crystal according to claim 1, characterized in that the surface of the input plane mirror (5) is coated with a 2050nm narrow-band reflection film, and the surface of the output plane mirror (7) is coated with a 2050nm 5% transmission film. 3.根据权利要求2所述的一种基于Ho掺杂晶体的多波长固体激光器，其特征在于，所述Ho掺杂混合晶体(6)中圆柱形掺杂晶体(16)为a轴切割的Ho:YAP晶体，第一扇环形掺杂晶体(12)为c轴切割的Ho:LLF晶体、第二扇环形掺杂晶体(13)为c轴切割的Ho:YAP晶体、第三扇环形掺杂晶体(14)为c轴切割的Ho:YLF晶体、第四扇环形掺杂晶体(15)为b轴切割的Ho:YAP晶体。3. A multi-wavelength solid-state laser based on Ho-doped crystal according to claim 2, characterized in that the cylindrical doped crystal (16) in the Ho-doped mixed crystal (6) is an a-axis cut Ho:YAP crystal, the first fan-shaped ring-shaped doped crystal (12) is a c-axis cut Ho:LLF crystal, the second fan-shaped ring-shaped doped crystal (13) is a c-axis cut Ho:YAP crystal, the third fan-shaped ring-shaped doped crystal (14) is a c-axis cut Ho:YLF crystal, and the fourth fan-shaped ring-shaped doped crystal (15) is a b-axis cut Ho:YAP crystal. 4.根据权利要求3所述的一种基于Ho掺杂晶体的多波长固体激光器，其特征在于，所述Ho掺杂混合晶体(6)中第一扇形掺杂晶体(18)为c轴切割Ho:LLF晶体、第二扇形掺杂晶体(19)为c轴切割Ho:YAP晶体、第三扇形掺杂晶体(20)为c轴切割Ho:YLF晶体、第四扇形掺杂晶体(21)为b轴切割Ho:YLF晶体。4. A multi-wavelength solid-state laser based on Ho-doped crystal according to claim 3, characterized in that the first fan-shaped doped crystal (18) in the Ho-doped mixed crystal (6) is a c-axis cut Ho:LLF crystal, the second fan-shaped doped crystal (19) is a c-axis cut Ho:YAP crystal, the third fan-shaped doped crystal (20) is a c-axis cut Ho:YLF crystal, and the fourth fan-shaped doped crystal (21) is a b-axis cut Ho:YLF crystal. 5.根据权利要求4所述的一种基于Ho掺杂晶体的多波长固体激光器，其特征在于，所述Ho掺杂混合晶体(6)中每个掺杂晶体的角度范围为0-90°。5. A multi-wavelength solid-state laser based on Ho-doped crystal according to claim 4, characterized in that the angle range of each doped crystal in the Ho-doped mixed crystal (6) is 0-90°. 6.一种基于Ho掺杂晶体的多波长固体激光器的操作方法，依托于权利要求1-5之一所述的一种基于Ho掺杂晶体的多波长固体激光器实现，其特征在于，包括如下步骤：6. A method for operating a multi-wavelength solid-state laser based on a Ho-doped crystal, which is implemented by relying on a multi-wavelength solid-state laser based on a Ho-doped crystal according to any one of claims 1 to 5, characterized in that it comprises the following steps: 1940nm的泵浦源输出泵浦光，泵浦光经光纤传输进入光纤耦合透镜组耦合后输出平行光，平行光经过微透镜阵列分束聚焦后透过输入平面镜，得到1940nm波段的光会聚在Ho掺杂混合晶体的前端面；The 1940nm pump source outputs pump light, which is transmitted through the optical fiber and then coupled into the optical fiber coupling lens group to output parallel light. The parallel light is split and focused by the microlens array and then passes through the input plane mirror to obtain the light in the 1940nm band, which is focused on the front end of the Ho-doped mixed crystal. Ho掺杂混合晶体中不同的掺杂晶体对输入的1940nm波段的光吸收后，输出不同波段的光；Different doped crystals in the Ho-doped mixed crystal absorb the input light of 1940nm band and output light of different bands; 不同波段的光透过输出平面镜，然后通过1900nm窄带滤波片进行滤波，得到不同频率范围的2μm波段激光。Light of different wavelength bands passes through the output plane mirror and then is filtered by a 1900nm narrow-band filter to obtain 2μm-band lasers of different frequency ranges. 7.根据权利要求6所述的一种基于Ho掺杂晶体的多波长固体激光器的操作方法，其特征在于：不同的掺杂晶体中基于晶体旋转角度为0-90°，实现每一束输入的激光的偏振方向和所聚焦的不同旋转角度的晶体的轴向各不相同，当输入的激光的偏振方向与晶体主轴之间产生角度变化量α时，导致掺杂晶体输出的σ偏振态和π偏振态的波长变化，得到表达式为：7. The method for operating a multi-wavelength solid-state laser based on a Ho-doped crystal according to claim 6 is characterized in that: in different doped crystals, based on a crystal rotation angle of 0-90°, the polarization direction of each input laser beam and the axial direction of the focused crystal with different rotation angles are different, and when an angle change α is generated between the polarization direction of the input laser and the main axis of the crystal, the wavelength of the σ polarization state and the π polarization state output by the doped crystal changes, and the expression is: λσ(θ1)＝λσ(θ0)+Δλσ(α)(1)λ σ (θ 1 )=λ σ (θ 0 )+Δλ σ (α)(1) λπ(θ1)＝λπ(θ0)+Δλπ(α)(2)λ π (θ 1 )=λ π (θ 0 )+Δλ π (α)(2) 其中，θ0定义为输入光偏振方向和晶体主轴的初始夹角，在旋转α后夹角变为θ1，λσ(θ0)和λσ(θ1)分别定义为σ偏振态在夹角为θ0和θ1时输出的中心波长，λπ(θ0)和λπ(θ1)分别定义为π偏振态在夹角为θ0和θ1时输出的中心波长，Δλσ(α)和Δλπ(α)表示旋转α后σ偏振态的中心波长变化量和π偏振态的中心波长变化量；Wherein, θ 0 is defined as the initial angle between the polarization direction of the input light and the principal axis of the crystal, and after a rotation of α, the angle becomes θ 1 , λ σ (θ 0 ) and λ σ (θ 1 ) are defined as the central wavelengths output by the σ polarization state when the angles are θ 0 and θ 1 , respectively, λ π (θ 0 ) and λ π (θ 1 ) are defined as the central wavelengths output by the π polarization state when the angles are θ 0 and θ 1 , respectively, Δλ σ (α) and Δλ π (α) represent the changes in the central wavelengths of the σ polarization state and the π polarization state after a rotation of α; 掺杂晶体的a轴和c轴平面的折射率关系的表达式为：The expression for the refractive index relationship between the a-axis and c-axis planes of the doped crystal is: 其中，na和nc分别是a轴和c轴折射率，nc(θ)是输入光偏振方向和晶体主轴夹角θ时的折射率；Where n a and n c are the refractive indices of the a-axis and c-axis respectively, and n c (θ) is the refractive index when the angle θ between the input light polarization direction and the crystal principal axis is θ; 基于输出光受输入镜和输出镜之间的谐振腔驻波条件的制约，得到表达式为：Based on the fact that the output light is subject to the resonant cavity standing wave condition between the input mirror and the output mirror, the expression is obtained: 2kL'＝2mπ(4)2kL'＝2mπ(4) L'＝n0L1+nc(θ)L2(5)L'＝n 0 L 1 +n c (θ)L 2 (5) 其中，k是波矢的模，L’是总光程，n0L1和nc(θ)L2分别代表谐振腔内晶体外部和内部的光程，m是第一正整数；L1和L2分别表示谐振腔内振荡时光在晶体外部和内部的传播路程；Where k is the mode of the wave vector, L' is the total optical path, n0L1 and nc (θ) L2 represent the optical paths outside and inside the crystal in the resonant cavity, respectively, and m is the first positive integer; L1 and L2 represent the propagation paths of light outside and inside the crystal when oscillating in the resonant cavity, respectively; 结合式(3)和式(4)和式(5)，得到：Combining equation (3), equation (4) and equation (5), we get: 当角θ变化α时，式(6)变化为：When the angle θ changes by α, equation (6) changes to: 其中，k'是变化后波矢的模，m'是第二正整数；Among them, k' is the modulus of the wave vector after the change, and m' is the second positive integer; 对式(7)引入波长λ，得到表达式为：Introducing wavelength λ into equation (7), we get the following expression: 其中，m1'和m2'分别为第三正整数，第四正整数，θπ0和θσ0分别表示输出的σ偏振和π偏振与晶体主轴的夹角；Wherein, m 1 ' and m 2 ' are the third positive integer and the fourth positive integer respectively, θ π0 and θ σ0 represent the angles between the output σ polarization and π polarization and the main axis of the crystal respectively; 基于式(8)和式(9)得到，引入α后变量Δλπ(α)/Δλσ(α)和m1'/m2'亦会协同变化，当旋转偏振片时，随着θ的变化，折射率nc(θ)发生改变，从而使光程L’变化，波矢的模k会随之变化，即波长λ变化；在满足式(8)和式(9)的条件下，基于Ho掺杂晶体的多波长固体激光器输出不同频率范围的2μm波段激光。Based on equations (8) and (9), it is obtained that after the introduction of α, the variables Δλ π (α)/Δλ σ (α) and m 1 '/m 2 ' will also change in coordination. When the polarizer is rotated, the refractive index n c (θ) changes with the change of θ, thereby changing the optical path L' and the mode k of the wave vector will change accordingly, that is, the wavelength λ changes. Under the conditions of satisfying equations (8) and (9), the multi-wavelength solid-state laser based on Ho-doped crystal outputs 2μm band lasers in different frequency ranges. 8.一种基于Ho掺杂晶体的多波长固体激光器，其特征在于，包括795nm的LD泵浦源(9)、光纤(2)，光纤耦合透镜组(3)、微透镜阵列(4)、输入平面镜(5)、Tm:YAP晶体(17)、Ho掺杂混合晶体(6)、输出平面镜(7)、1000nm窄带滤波片(10)、2000nm窄带滤波片(11)；8. A multi-wavelength solid-state laser based on Ho-doped crystal, characterized by comprising a 795 nm LD pump source (9), an optical fiber (2), an optical fiber coupling lens group (3), a microlens array (4), an input plane mirror (5), a Tm:YAP crystal (17), a Ho-doped mixed crystal (6), an output plane mirror (7), a 1000 nm narrow-band filter (10), and a 2000 nm narrow-band filter (11); 所述795nm的LD泵浦源(9)通过光纤(2)连接光纤耦合透镜组(3)，所述光纤耦合透镜组(3)的右侧沿光路依次排列设置有微透镜阵列(4)、输入平面镜(5)、Tm:YAP晶体(17)、Ho掺杂混合晶体(6)、输出平面镜(7)、1000nm窄带滤波片(10)、2000nm窄带滤波片(11)；The 795 nm LD pump source (9) is connected to a fiber coupling lens group (3) via an optical fiber (2); a micro lens array (4), an input plane mirror (5), a Tm:YAP crystal (17), a Ho-doped mixed crystal (6), an output plane mirror (7), a 1000 nm narrow-band filter (10), and a 2000 nm narrow-band filter (11) are sequentially arranged on the right side of the fiber coupling lens group (3) along the optical path; 所述Ho掺杂混合晶体(6)由中心位置的圆柱形掺杂晶体(16)和包围在圆柱形掺杂晶体(16)外的第一扇环形掺杂晶体(12)、第二扇环形掺杂晶体(13)、第三扇环形掺杂晶体(14)、第四扇环形掺杂晶体(15)组合而成，所述圆柱形掺杂晶体(16)为不同轴向切割的Ho:YAP晶体中的一种，所述第一扇环形掺杂晶体(12)、第二扇环形掺杂晶体(13)、第三扇环形掺杂晶体(14)、第四扇环形掺杂晶体(15)为不同轴向切割的Ho:LLF晶体、Ho:YAP晶体、Ho:YLF晶体中的几种组合在一起；The Ho-doped mixed crystal (6) is composed of a cylindrical doped crystal (16) at a central position and a first fan-shaped doped crystal (12), a second fan-shaped doped crystal (13), a third fan-shaped doped crystal (14), and a fourth fan-shaped doped crystal (15) surrounding the cylindrical doped crystal (16); the cylindrical doped crystal (16) is one of Ho:YAP crystals cut in different axial directions; the first fan-shaped doped crystal (12), the second fan-shaped doped crystal (13), the third fan-shaped doped crystal (14), and the fourth fan-shaped doped crystal (15) are a combination of several of Ho:LLF crystals, Ho:YAP crystals, and Ho:YLF crystals cut in different axial directions; 或者所述Ho掺杂混合晶体(6)为由第一扇形掺杂晶体(18)、第二扇形掺杂晶体(19)、第三扇形掺杂晶体(20)、第四扇形掺杂晶体(21)组合而成，第一扇形掺杂晶体(18)、第二扇形掺杂晶体(19)、第三扇形掺杂晶体(20)、第四扇形掺杂晶体(21)为不同轴向切割的Ho:LLF晶体、Ho:YAP晶体、Ho:YLF晶体中的几种组合在一起。Alternatively, the Ho-doped mixed crystal (6) is composed of a first fan-shaped doped crystal (18), a second fan-shaped doped crystal (19), a third fan-shaped doped crystal (20), and a fourth fan-shaped doped crystal (21), wherein the first fan-shaped doped crystal (18), the second fan-shaped doped crystal (19), the third fan-shaped doped crystal (20), and the fourth fan-shaped doped crystal (21) are a combination of several of Ho:LLF crystals, Ho:YAP crystals, and Ho:YLF crystals cut in different axes. 9.根据权利要求8所述的一种基于Ho掺杂晶体的多波长固体激光器，其特征在于，所述输入平面镜(5)的表面镀有2050nm窄带反射膜，所述输出平面镜(7)的表面镀2050nm的5％透射膜。9. A multi-wavelength solid-state laser based on Ho-doped crystal according to claim 8, characterized in that the surface of the input plane mirror (5) is coated with a 2050nm narrow-band reflection film, and the surface of the output plane mirror (7) is coated with a 2050nm 5% transmission film. 10.根据权利要求9所述的一种基于Ho掺杂晶体的多波长固体激光器，其特征在于，所述Ho掺杂混合晶体(6)中圆柱形掺杂晶体(16)为a轴切割的Ho:YAP晶体，第一扇环形掺杂晶体(12)为c轴切割的Ho:LLF晶体、第二扇环形掺杂晶体(13)为c轴切割的Ho:YAP晶体、第三扇环形掺杂晶体(14)为a轴切割的Ho:YLF晶体、第四扇环形掺杂晶体(15)为b轴切割的Ho:YLF晶体；所述Ho掺杂混合晶体(6)中每个掺杂晶体的角度范围为0-90°。10. A multi-wavelength solid-state laser based on Ho-doped crystal according to claim 9, characterized in that the cylindrical doped crystal (16) in the Ho-doped mixed crystal (6) is an a-axis cut Ho:YAP crystal, the first sector ring-shaped doped crystal (12) is a c-axis cut Ho:LLF crystal, the second sector ring-shaped doped crystal (13) is a c-axis cut Ho:YAP crystal, the third sector ring-shaped doped crystal (14) is an a-axis cut Ho:YLF crystal, and the fourth sector ring-shaped doped crystal (15) is a b-axis cut Ho:YLF crystal; the angle range of each doped crystal in the Ho-doped mixed crystal (6) is 0-90°.
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