CN120255283A - Chemically amplified positive photoresist, array process and OLED - Google Patents

Abstract

The invention relates to the technical field of OLED lithography, in particular to a chemically amplified positive photoresist, an array process and an OLED. The resin in the chemically amplified positive resist consists of PHS resin and phenolic resin, and comprises 10-35 parts of PHS resin and 3-20 parts of phenolic resin per 100 parts of the chemically amplified positive resist. The photoresist has the characteristic of high resolution, and simultaneously improves the sensitivity of the photoresist under the condition of ensuring the residual film rate.

Description

Chemically amplified positive photoresist, array process and OLED

Technical Field

The invention relates to the technical field of OLED lithography, in particular to a chemically amplified positive photoresist, an array process and an OLED.

Background

In the modern high-tech industry, OLED photoresists play a critical role. The photoresist is a special light sensitive mixed material containing four main components of photosensitizer, film-forming resin, solvent and auxiliary agent. The method is essentially a pattern transfer medium utilizing photochemical reaction, and can accurately transfer a fine pattern on a mask plate to a substrate to be processed through a series of complex processes of exposure, development, etching and the like, so as to form a corrosion-resistant film material, wherein the solubility of the corrosion-resistant film material can be correspondingly changed in the exposure process.

Although photoresist is only 3-5% of the material cost of the semiconductor manufacturing process, its impact on the overall semiconductor manufacturing field is not insignificant. The quality and performance of photoresist are the key points for determining the performance, the product yield and the reliability of integrated circuits, are representative key core materials in the development level of the semiconductor industry, and have irreplaceable index functions. In recent years, the panel industry is in a wave of high-speed development, and then more stringent requirements are put on the OLED photoresist. (1) From the aspect of resolution, the resolution of the OLED photoresist is continuously improved from 5um in the early stage, 3um is adopted, 1.5-2um is commonly reached nowadays, the development trend is still continuous, and the existing photoresist has a fresh resolution of 1.2um or below. (2) The requirements for photoresist sensitivity (exposure energy) are also greatly increased. Since the sensitivity is determined by both the photoresist illuminance and the exposure time (sensitivity=photoresist illuminance×exposure time), it is critical to shorten the exposure time to reduce the exposure energy while ensuring the illuminance to be stable, but on the basis of improving the sensitivity of the existing photoresist again, the residual film rate is often difficult to keep in a good range, that is, the residual film rate and the sensitivity cannot be simultaneously considered. Based on the above, it is desirable to provide a new photoresist.

In view of this, the present invention has been made.

Disclosure of Invention

The invention aims to provide a chemically amplified positive photoresist, an array process and an OLED. The embodiment of the invention provides a novel photoresist, which not only has the characteristic of high resolution, but also improves the sensitivity of the photoresist under the condition of ensuring the residual film rate.

The invention is realized in the following way:

in a first aspect, the present invention provides a chemically amplified positive resist, wherein the resin in the chemically amplified positive resist is composed of a PHS resin and a phenolic resin, and comprises 10 to 35 parts of PHS resin and 3 to 20 parts of phenolic resin per 100 parts of the chemically amplified positive resist.

In an alternative embodiment, the PHS resin has a weight average molecular weight Mw ranging from 3000 to 25000;

Preferably, the PHS resin has a PDI of between 1.2 and 2.5;

Preferably, the monomer forming the PHS resin includes at least one of a styrene monomer, a carboxylic acid ester monomer, an acrylic acid ester monomer, a maleic anhydride monomer and a pyridine vinyl monomer.

In an alternative embodiment, the phenolic resin is selected from the group consisting of polymers of the following structural formula:

Wherein R and R' are each independently selected from any one of C1-C5 alkyl, hydrogen and hydroxy, and x and y are each independently integers of 50-1000.

In an alternative embodiment, it further comprises a photosensitizer;

preferably, it comprises 0.5 to 20 parts of the photosensitizer per 100 parts of the chemically amplified positive photoresist;

preferably, the photosensitizer comprises a diazonaphthoquinone photosensitizer and/or a diazonaphthoquinone photosensitizer.

In an alternative embodiment, it further comprises a tackifier, preferably a silazane-based compound, more preferably hexamethyldisilazane;

Preferably, it comprises 300-1000ppm of adhesion promoter per 100 parts of the chemically amplified positive resist.

In an alternative embodiment, the composition further comprises a sensitizer, preferably a diazonaphthoquinone ester compound, preferably any one of 2,3, 4-trihydroxybenzophenone diazonaphthoquinone sulfonate, 2,3, 4' -tetrahydroxybenzophenone diazonaphthoquinone sulfonate and 2-hydroxyphenyl-2-trihydroxyphenyl propane diazonaphthoquinone ester;

preferably, it comprises 200-1000ppm sensitizer per 100 parts of the chemically amplified positive resist.

In an alternative embodiment, it further comprises a leveling agent, preferably a silicone-based compound, more preferably a modified silicone polydimethylsiloxane and/or a silicone mixture;

preferably, it comprises 200-2000ppm leveling agent per 100 parts of the chemically amplified positive resist.

In an alternative embodiment, it further comprises a solvent;

preferably, the solvent includes at least one of an alcohol solvent, an ester solvent, an ether solvent, and a ketone solvent;

Preferably, the solvent is the balance per 100 parts of the chemically amplified positive resist.

In a second aspect, the present invention provides an array process comprising etching using a chemically amplified positive photoresist as described in the previous embodiments.

In a third aspect, the present invention provides an OLED prepared by the array process described in the previous embodiments.

The photoresist provided by the embodiment of the invention has the beneficial effects that the resin in the photoresist provided by the embodiment of the invention adopts PHS resin and phenolic resin, so that the photoresist has the characteristic of high resolution, and simultaneously, the sensitivity of the photoresist is improved under the condition of ensuring the residual film rate, namely, the residual film rate and the sensitivity can be both considered.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a topography at a resolution of 1.0 μm of a chemically amplified positive resist as provided in example 1 of the present invention;

FIG. 2 is a topography of the chemically amplified positive resist provided in example 2 of the present invention at a resolution of 1.2 μm and 1.0 μm;

FIG. 3 is a topography at a resolution of 1.0 μm for the chemically amplified positive resist provided in example 3 of the present invention;

FIG. 4 is a topography at 2.0 μm and 1.5 μm resolution of the photoresist provided in comparative example 1 of the present invention;

FIG. 5 is a topography at 2.0 μm and 1.5 μm resolution of the photoresist provided in comparative example 2 of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.

The existing positive photoresist often adopts phenolic resin as a resin system, the application resolution of the photoresist formed by the system in an OLED panel factory is continuously improved, and the residual film rate of the traditional phenolic resin system is often difficult to maintain in a good range under the condition of improving sensitivity.

The embodiment of the invention provides a novel chemical amplification type positive photoresist, which is used for matching PHS resin and phenolic resin to form a novel resin system, so that high resolution can be realized, and the sensitivity of the photoresist is improved under the condition of ensuring the residual film rate.

Specifically, it comprises 10 to 35 parts of PHS resin and 3 to 20 parts of phenolic resin per 100 parts of the chemically amplified positive resist.

For example, the amount of PHS resin used is any value between 10 and 35 parts, such as 10 parts, 15 parts, 20 parts, 25 parts, 30 parts, and 35 parts.

The PHS resin has a weight average molecular weight Mw ranging from 3000 to 25000, the HS resin has a PDI ranging from 1.2 to 2.5, and the monomer forming the PHS resin comprises at least one of styrene monomer, carboxylic acid ester monomer, acrylic acid ester monomer, maleic anhydride monomer and pyridine vinyl monomer. For example, the structural formula of a polymer that may be present in the PHS resin is as follows:

the PHS resin can be self-made resin or can be purchased directly in the prior art.

The phenolic resin is used in an amount of 3 to 20 parts, such as 3 parts, 5 parts, 10 parts, 15 parts, 20 parts, etc.

The phenolic resin is selected from the group consisting of polymers of the following structural formulas:

Wherein R and R 'are each independently selected from any one of C1-C5 alkyl, hydrogen and hydroxy, e.g., R and R' are each independently selected from any one of alkyl, hydrogen and hydroxy, such as methyl, ethyl, propyl, etc. x and y are each independently integers from 50 to 1000.

Similarly, the phenolic resin can be self-made resin or can be purchased directly in the prior art.

Specifically, in the embodiment of the invention, the PHS resin molecular chain has high regularity, and benzene rings and vinyl groups are alternately arranged. The structure is not only beneficial to improving the resolution, but also lays a foundation for the cooperation with phenolic resin. The R and R' groups and the x and y values of the phenolic resin are changed, so that the chemical property and the space structure of the phenolic resin are more flexible and various. When the PHS resin is mixed with the phenolic resin, various interactions can be formed between molecules of the PHS resin and the phenolic resin. On one hand, hydroxyl groups in PHS resin can be mutually attracted with partial groups (such as methyl, ethyl and the like) on phenolic resin through Van der Waals force, so that the intermolecular binding force is enhanced, the photoresist forms a tighter and uniform network structure in the film forming process, and the film thickness uniformity is improved. On the other hand, in the photochemical reaction process, hydroxyl groups on the PHS resin serve as active sites, and undergo chemical reaction under the action of the photoacid generator, thereby causing self-solubility change. At this time, the existence of the modified phenolic resin can play a certain role in buffering and adjusting. The method can stabilize the whole chemical structure of the photoresist on the premise of not influencing the photochemical reaction of PHS resin, prevent the condition of excessive dissolution or uneven dissolution in the exposure and development processes, and further ensure good residual film rate.

Further, the chemically amplified positive resist further comprises a photosensitizer including a diazonaphthoquinone photosensitizer and/or a diazonaphthoquinone photosensitizer. Examples include, but are not limited to, class 2,1,4 diazonaphthoquinone sensitizers and/or class 2,1,5 diazonaphthoquinone sensitizers, which may have the following optional structure: The method comprises the steps of (1), Formula 2, wherein R in formula 1 or formula 2 represents hydrogen or formula 3 below,Formula 3, and a sulfonic acid group (SO ₃ R) in formula 3 is attached thereto.

It comprises 0.5 to 20 parts of the photosensitizer per 100 parts of the chemically amplified positive resist, for example, any number between 0.5 to 20 parts, such as 0.5 parts, 1 part, 5 parts, 10 parts, 15 parts, 20 parts, etc.

Further, the chemically amplified positive resist further comprises an adhesion promoter, preferably a silazane-based compound, including, for example, but not limited to, hexamethyldisilazane. It includes 300 to 1000ppm, for example, 300 to 1000 values such as 300ppm, 500ppm, 800ppm, 1000ppm, etc., per 100 parts of the chemically amplified positive resist.

Further, the chemically amplified positive resist further comprises a sensitizer, preferably a diazonaphthoquinone ester compound. For example, including but not limited to any of 2,3, 4-trihydroxybenzophenone diazonaphthoquinone sulfonate, 2,3,4 "-tetrahydroxybenzophenone diazonaphthoquinone sulfonate, and 2-hydroxyphenyl-2-trihydroxyphenyl propane diazonaphthoquinone sulfonate.

Further, it comprises 200 to 1000ppm per 100 parts of the chemically amplified positive resist. For example, 200ppm, 500ppm, 700ppm, 1000ppm, etc., and any value between 200 and 1000ppm.

Further, the chemically amplified positive resist further comprises a leveling agent, preferably a siloxane-based compound, including, for example, but not limited to, modified silicon polydimethylsiloxane and/or a silicone mixture.

It comprises 200 to 2000ppm of a leveling agent, for example, 200 to 2000ppm of any value between 200ppm, 500ppm, 1000ppm, 1500ppm, 2000ppm, etc., per 100 parts of the chemically amplified positive resist.

Further, the chemically amplified positive resist further comprises a solvent including at least one of an alcohol solvent, an ester solvent, an ether solvent and a ketone solvent. Examples include, but are not limited to, one or more of propylene glycol methyl ether acetate, cyclohexanone, gamma-butyrolactone, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, triethylene glycol dimethyl ether, triethylene glycol diethyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, methanol, ethanol, isopropanol, N-propanol, N-butanol, isobutanol, sec-butanol, t-butanol, pentanol, hexanol, heptanol, octanol, nonanol, decanol, benzyl alcohol, ethyl acetate, N-propyl acetate, isopropyl acetate, N-butyl acetate, isobutyl acetate, sec-butyl acetate, t-butyl acetate, methyl methacrylate, ethyl methacrylate, N-propyl methacrylate, isopropyl methacrylate, N-butyl methacrylate, isobutyl methacrylate, dimethyl carbonate, diethyl carbonate, ethylene carbonate, propylene carbonate, N-dimethylformamide, N-dimethylacetamide, and N-methylpyrrolidone. The balance being the solvent per 100 parts of the chemically amplified positive resist.

In a second aspect, the present invention provides an array process comprising etching using a chemically amplified positive photoresist as described in the previous embodiments.

In a third aspect, the present invention provides an OLED prepared by the array process described in the previous embodiments.

The features and capabilities of the present invention are described in further detail below in connection with the examples.

Example 1

The embodiment of the invention provides a chemical amplification type positive photoresist, which comprises the following components:

15 parts of PHS resin with weight average molecular weight Mw of 12000 and PDI of 1.6, 5 parts of phenolic resin modifier with R of methyl, x=150 and y=200, 2 parts of 2,3, 4' -tetrahydroxybenzophenone 1, 2-diazidonaphthoquinone-5-sulfonate, 300ppm of 2,3, 4-trihydroxybenzophenone diazonaphthoquinone sulfonate, 400ppm of hexamethyldisilazane, 300ppm of modified silicon polydimethylsiloxane and the balance of propylene glycol methyl ether acetate.

Wherein PHS resin was purchased from MIWON Meiyuan Co. Phenolic resin modifications were purchased from the san-spring group, shandong, 2,1,4 diazo naphthoquinone sensitizer was purchased from MIWON Meiyuan Co., ltd, and modified sildimethicone was purchased from Pick chemical.

The embodiment provides a preparation method of the chemical amplification type positive photoresist, which comprises the following steps:

The above raw materials were mixed and stirred uniformly at room temperature, followed by filtration through a 0.2 μm filter to obtain a photoresist solution.

The present embodiment provides the photolithography step of the above-described chemically amplified positive resist:

the cleaned silicon wafer substrate is fixed on a spin coater, and the photoresist solution is spin coated for 30s at a rotating speed of 3000rpm, so that a photoresist film with a thickness of about 1.2 mu m is formed on the surface of the silicon wafer. And placing the glued silicon wafer on a hot plate at 100 ℃ for soft baking for 60 seconds, volatilizing part of solvent in the photoresist, and enhancing the adhesive force between the photoresist and the substrate. The exposure was performed using an MPA600 exposure machine (hybrid light source). After exposure, the silicon wafer is placed in an environment of 110 ℃ and post-baked for 60 seconds, so that chemical reaction inside the photoresist is promoted. Developing for 60s by using 0.26N tetramethyl ammonium hydroxide aqueous solution, then flushing for 30s by deionized water, and finally drying in a nitrogen atmosphere to obtain the photoetching pattern.

Example 2

The embodiment of the invention provides a chemical amplification type positive photoresist, which comprises the following components:

20 parts of PHS resin with weight average molecular weight Mw of 18000 and PDI of 2.0, 8 parts of phenolic resin modifier with R of ethyl, x=250 and y=350, 3 parts of 1,1' -bis (4-alkoxyphenyl) -2,2' -tri-tert-butyl-1, 1' -biphenyl-4, 4' -diol 1, 2-diaza naphthoquinone-5-sulfonate, 400ppm of 2,3, 4' -tetrahydroxybenzophenone diazonaphthoquinone sulfonate, 500ppm of hexamethyldisilazane, 400ppm of modified silicone and the balance of propylene glycol methyl ether acetate.

The embodiment provides a preparation method of the chemical amplification type positive photoresist, which comprises the following steps:

the cleaned silicon wafer substrate is fixed on a spin coater, and the photoresist solution is spin coated for 30s at a rotating speed of 3000rpm, so that a photoresist film with a thickness of about 1.2 mu m is formed on the surface of the silicon wafer. And placing the glued silicon wafer on a hot plate at 100 ℃ for soft baking for 60 seconds, volatilizing part of solvent in the photoresist, and enhancing the adhesive force between the photoresist and the substrate. The exposure was performed using an MPA600 exposure machine (hybrid light source). After exposure, the silicon wafer is placed in an environment of 110 ℃ and post-baked for 60 seconds, so that chemical reaction inside the photoresist is promoted. Developing for 60s by using 0.26N tetramethyl ammonium hydroxide aqueous solution, then flushing for 30s by deionized water, and finally drying in a nitrogen atmosphere to obtain the photoetching pattern.

Example 3

The embodiment of the invention provides a chemical amplification type positive photoresist, which comprises the following components:

25 parts of PHS resin with weight average molecular weight Mw of 22000 and PDI of 2.3, 12 parts of phenolic resin modifier with R of hydrogen, x=350 and y=450, 5 parts of photosensitizer containing 2,1,4 class and 2,1,5 class of diazonaphthoquinone, 2,3, 4' -tetrahydroxybenzophenone 1, 2-diaza-naphthoquinone-5-sulfonate and 1,1' -bis (4-alkoxyphenyl) -2,2' -tri-tert-butyl-1, 1' -biphenyl-4, 4' -diol 1, 2-diaza-naphthoquinone-5-sulfonate (the ratio of the two is 1:1), 500ppm of 2-hydroxyphenyl-2-trihydroxyphenyl propane diazonaphthoquinone ester, 600ppm of hexamethyldisilazane, 500ppm of modified silicone polydimethylsiloxane, the balance of solvent, and the volume ratio of the solvent is ethylene glycol monoethyl ether and dimethyl carbonate of 3:1.

The embodiment provides a preparation method of the chemical amplification type positive photoresist, which comprises the following steps:

The above raw materials were mixed and stirred uniformly at room temperature, followed by filtration through a 0.2 μm filter to obtain a photoresist solution.

The embodiment provides the photoetching step of the chemical amplification type positive photoresist, wherein the cleaned silicon wafer substrate is fixed on a spin coater, the photoresist solution is spin coated for 30s at a rotating speed of 3000rpm, and a photoresist film with a thickness of about 1.2 mu m is formed on the surface of the silicon wafer. And placing the glued silicon wafer on a hot plate at 100 ℃ for soft baking for 60 seconds, volatilizing part of solvent in the photoresist, and enhancing the adhesive force between the photoresist and the substrate. The exposure was performed using an MPA600 exposure machine (hybrid light source). After exposure, the silicon wafer is placed in an environment of 110 ℃ and post-baked for 60 seconds, so that chemical reaction inside the photoresist is promoted. Developing for 60s by using 0.26N tetramethyl ammonium hydroxide aqueous solution, then flushing for 30s by deionized water, and finally drying in a nitrogen atmosphere to obtain the photoetching pattern.

Comparative example 1

This comparative example provides a photoresist having the following composition:

20 parts of phenolic resin (the phenolic resin is the phenolic resin of example 1), 2 parts of 2,3, 4' -tetrahydroxybenzophenone 1, 2-diazidonaphthoquinone-5-sulfonate, 300ppm of 2,3, 4-trihydroxybenzophenone diazonaphthoquinone sulfonate, 400ppm of hexamethyldisilazane, 300ppm of modified silicone and the balance of propylene glycol methyl ether acetate.

The specific method of photolithography using the photoresist was the same as in example 1.

Comparative example 2

This comparative example provides a photoresist having the following composition:

20 parts of PHS resin (the PHS resin of example 1), 2 parts of 2,3, 4' -tetrahydroxybenzophenone 1, 2-diazidonaphthoquinone-5-sulfonate, 300ppm of 2,3, 4-trihydroxybenzophenone diazonaphthoquinone sulfonate, 400ppm of hexamethyldisilazane, 300ppm of modified silicone polydimethylsiloxane, and the balance of propylene glycol methyl ether acetate.

The specific method of photolithography using the photoresist was the same as in example 1.

Performance test 1

The resist patterns of examples 1 to 3 and comparative examples 1 to 2 after development were observed using a Scanning Electron Microscope (SEM).

The results are shown in figures 1 to 5. According to the detection result graph, the photoresist provided by the embodiment of the invention has good appearance and good resolution of 1.0-1.2 mu m. If the formulation provided by the embodiment of the invention is changed, insufficient resolution occurs at 1.5 μm.

Performance test 2

The photoresists of examples 1 to 3 and comparative examples 1 to 2 were subjected to performance test, and the results are shown in the following table.

From the above table, it is clear that the resolution and sensitivity of examples 1 to 3 are better overall, and that the heat resistance of comparative examples 1 to 2 is poor, and that discoloration, cracking, and the like occur after heating.

When the PHS resin is mixed with the modified phenolic resin, various interactions can be formed between molecules of the PHS resin and the modified phenolic resin. On one hand, hydroxyl groups in PHS resin can be mutually attracted with partial groups (such as methyl, ethyl and the like) on modified phenolic resin through Van der Waals force, so that the intermolecular binding force is enhanced, the photoresist forms a more compact and uniform network structure in the film forming process, and the film thickness uniformity is improved. On the other hand, in the photochemical reaction process, hydroxyl groups on the PHS resin serve as active sites, and undergo chemical reaction under the action of the photoacid generator, thereby causing self-solubility change. At this time, the existence of the modified phenolic resin can play a certain role in buffering and adjusting. The method can stabilize the whole chemical structure of the photoresist on the premise of not influencing the photochemical reaction of PHS resin, prevent the condition of excessive dissolution or uneven dissolution in the exposure and development processes, and further ensure good residual film rate.

The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A chemically amplified positive resist, wherein the resin in the chemically amplified positive resist consists of a PHS resin and a phenol resin, and comprises 10 to 35 parts of the PHS resin and 3 to 20 parts of the phenol resin per 100 parts of the chemically amplified positive resist.

2. The chemically amplified positive resist of claim 1, wherein the weight average molecular weight Mw of the PHS resin is in the range of 3000-25000;

Preferably, the PHS resin has a PDI of between 1.2 and 2.5;

Preferably, the monomer forming the PHS resin includes at least one of a styrene monomer, a carboxylic acid ester monomer, an acrylic acid ester monomer, a maleic anhydride monomer and a pyridine vinyl monomer.

3. The chemically amplified positive resist of claim 1, wherein the phenolic resin is selected from the group consisting of polymers of the following structural formula:

Wherein R and R' are each independently selected from any one of C1-C5 alkyl, hydrogen and hydroxy, and x and y are each independently integers of 50-1000.

4. The chemically amplified positive resist of claim 1, further comprising a photosensitizer,

Preferably, it comprises 0.5 to 20 parts of the photosensitizer per 100 parts of the chemically amplified positive photoresist;

preferably, the photosensitizer comprises a diazonaphthoquinone photosensitizer and/or a diazonaphthoquinone photosensitizer.

5. The chemically amplified positive resist according to claim 1, further comprising an adhesion promoter, preferably a silazane compound, more preferably hexamethyldisilazane;

Preferably, it comprises 300-1000ppm of adhesion promoter per 100 parts of the chemically amplified positive resist.

6. The chemically amplified positive resist according to claim 1, further comprising a sensitizer, preferably a diazonaphthoquinone ester compound, preferably any one of 2,3, 4-trihydroxybenzophenone diazonaphthoquinone sulfonate, 2,3, 4' -tetrahydroxybenzophenone diazonaphthoquinone sulfonate and 2-hydroxyphenyl-2-trihydroxyphenyl propane diazonaphthoquinone ester;

preferably, it comprises 200-1000ppm sensitizer per 100 parts of the chemically amplified positive resist.

7. The chemically amplified positive resist according to claim 1, further comprising a leveling agent, preferably a siloxane-based compound, more preferably a modified sil-dimethicone and/or a silicone mixture;

preferably, it comprises 200-2000ppm leveling agent per 100 parts of the chemically amplified positive resist.

8. The chemically amplified positive resist of claim 1, further comprising a solvent;

preferably, the solvent includes at least one of an alcohol solvent, an ester solvent, an ether solvent, and a ketone solvent;

Preferably, the solvent is the balance per 100 parts of the chemically amplified positive resist.

9. An array process comprising etching with the chemically amplified positive resist of claim 1.

10. An OLED prepared by the array process of claim 9.