CN120377863B - Integrated bulk acoustic wave filter and method for manufacturing the same - Google Patents
Integrated bulk acoustic wave filter and method for manufacturing the sameInfo
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- CN120377863B CN120377863B CN202510864999.2A CN202510864999A CN120377863B CN 120377863 B CN120377863 B CN 120377863B CN 202510864999 A CN202510864999 A CN 202510864999A CN 120377863 B CN120377863 B CN 120377863B
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Abstract
The application discloses an integrated bulk acoustic wave filter and a manufacturing method of the integrated bulk acoustic wave filter, comprising a second substrate and a plurality of bulk acoustic wave filters, wherein the bulk acoustic wave filters are formed on the second substrate, the bulk acoustic wave filters comprise a first electrode and a plurality of second electrodes, the sum of the numbers of the first electrode and the plurality of second electrodes corresponds to the number of the bulk acoustic wave filters, the thicknesses of a first upper electrode and a first lower electrode in the first electrode correspond to the minimum value of resonance frequencies in the bulk acoustic wave filters, and the thicknesses of a second upper electrode and a second lower electrode in the plurality of second electrodes correspond to the difference value of resonance frequencies of any two bulk acoustic wave filters in the plurality of bulk acoustic wave filters. The technical effect of being capable of adapting to different working frequencies is achieved.
Description
Technical Field
The application relates to the technical field of filter manufacturing, in particular to an integrated bulk acoustic wave filter and a manufacturing method of the integrated bulk acoustic wave filter.
Background
In the field of wireless communication technology, SAW filters and BAW filters are two vital components that play a critical role in different application scenarios, respectively.
BAW filters, i.e. bulk acoustic wave filters. The principle is based on bulk acoustic wave technology. When an alternating electric field is applied across a piezoelectric material, the material produces mechanical vibrations that propagate inside the material in the form of bulk acoustic waves. By skillfully designing the structure and the size of the bulk acoustic wave filter, bulk acoustic waves with specific frequencies can be smoothly transmitted in the filter, and acoustic waves with other frequencies are restrained, so that the filtering function is realized.
D-BAW filter, i.e. double-sided figure art bulk acoustic wave filter. The bulk acoustic wave filter structure is manufactured by adopting a double-sided process and bonding twice. That is, in the manufacturing process, a preparation process of several steps is first performed on the front surface of a Wafer (Wafer), and then the Wafer is turned over by bonding to perform a subsequent preparation process. During packaging, the wafer is turned over by bonding, and a preparation process of a plurality of steps is carried out on the back surface, so that a double-sided process is realized in the mode.
At present, in order to ensure the reliability of the chip in terms of design, process and function and avoid catastrophic failure in mass production, it is generally necessary to perform a tape-out test on the chip. The existing method for testing the chip in a flow mode generally comprises the steps of firstly manufacturing a plurality of bulk acoustic wave filters, then respectively testing the individual flow of the bulk acoustic wave filters, and finally packaging the tested bulk acoustic wave filters together. However, the foregoing method has a certain disadvantage in performing the film-flow test on the bulk acoustic wave filter, for example, since the film-flow test is performed on each bulk acoustic wave filter separately, the development period is long. For another example, a plurality of bulk acoustic wave filters are matched for use, which is easy to cause resource waste.
In order to solve the above-mentioned problems, the prior art proposes to integrate a plurality of bulk acoustic wave filters into one chip to generate an integrated bulk acoustic wave filter, thereby completing a flow sheet test for the integrated bulk acoustic wave filter at one time. However, the above-mentioned method can save manufacturing and testing costs, but the manufactured bulk acoustic wave filters cannot meet the requirement of having different operating frequencies, so that the integrated bulk acoustic wave filter can generate problems of poor frequency band adaptability, resource waste and the like.
The publication number is CN1145131187A, which is named as a TSV-based ladder-type narrow-band piezoelectric film bulk acoustic wave filter. The piezoelectric film bulk acoustic resonator comprises a silicon substrate, wherein a silicon dioxide supporting layer is arranged on the silicon substrate, and a plurality of piezoelectric film bulk acoustic resonators are distributed above the silicon dioxide supporting layer.
The publication number is CN222897242U, which is named as a bulk acoustic wave filter, a multiplexer and a communication device. The bulk acoustic wave filter comprises a plurality of resonance branches which are electrically connected, each resonance branch comprises two resonance cavities which are oppositely arranged, the angle of the opposite cambered surfaces of the two resonance cavities on the same resonance branch is a first radian, the angle of the opposite cambered surfaces of the two resonance cavities on different resonance branches is a second radian, and the first radian is smaller than the second radian.
Aiming at the technical problems that the existing integrated bulk acoustic wave filter in the prior art cannot meet the requirement of having different working frequencies, so that the integrated bulk acoustic wave filter can generate poor frequency band adaptability and resource waste, no effective solution is proposed at present.
Disclosure of Invention
The disclosure provides an integrated bulk acoustic wave filter and a manufacturing method thereof, so as to at least solve the technical problems that the existing integrated bulk acoustic wave filter in the prior art cannot meet the requirement of having different working frequencies, so that the integrated bulk acoustic wave filter can generate poor frequency band adaptability and resource waste.
According to one aspect of the present application, there is provided an integrated bulk acoustic wave filter comprising a second substrate and a plurality of bulk acoustic wave filters, wherein the plurality of bulk acoustic wave filters are formed on the second substrate, and the bulk acoustic wave filter comprises a first electrode and a plurality of second electrodes, the sum of the numbers of the first electrode and the plurality of second electrodes corresponds to the number of the plurality of bulk acoustic wave filters, and the thicknesses of a first upper electrode and a first lower electrode in the first electrode correspond to the minimum value of the resonant frequencies in the bulk acoustic wave filters, and the thicknesses of a second upper electrode and a second lower electrode in the plurality of second electrodes correspond to the difference of the resonant frequencies of any two bulk acoustic wave filters in the plurality of bulk acoustic wave filters.
Optionally, the plurality of bulk acoustic wave filters include first and second bulk acoustic wave filters, and the first and second bulk acoustic wave filters include a support layer and a piezoelectric layer, wherein the support layer is formed on the second substrate, a second lower electrode is formed on the support layer, a first lower electrode is formed on the second lower electrode, and a second lower electrode corresponding to the first bulk acoustic wave filter is formed with a first region for exposing the first lower electrode, wherein a thickness of the first lower electrode corresponds to a frequency difference between a thickness of the second lower electrode and the first and second bulk acoustic wave filters, and a frequency difference between the thickness of the first lower electrode and the first bulk acoustic wave filter, and the second bulk acoustic wave filter, and a second region for exposing the piezoelectric layer, wherein a thickness of the piezoelectric layer corresponds to a resonance frequency maximum of the first and second bulk acoustic wave filters, and a first resonant cavity corresponding to the first and second bulk acoustic wave filter are formed between the support layer and the second lower electrode, the first lower electrode, and the layer.
Optionally, a first upper electrode is formed on the piezoelectric layer, wherein a thickness of the first upper electrode corresponds to a resonance frequency minimum in the first bulk acoustic wave filter and the second bulk acoustic wave filter, a second upper electrode is formed on the first upper electrode, and the second upper electrode is formed with a fifth region for exposing the first upper electrode, wherein a thickness of the second upper electrode corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter, and the first upper electrode and the second upper electrode are formed with a seventh region, an eighth region, and a ninth region for exposing the piezoelectric layer, wherein the eighth region and the ninth region are formed on both sides of the seventh region, respectively.
Optionally, the first bulk acoustic wave filter and the second bulk acoustic wave filter comprise a supporting layer and a piezoelectric layer, wherein the supporting layer is formed on the second substrate, the second lower electrode is formed on the supporting layer, the first lower electrode is formed on the second lower electrode, the second lower electrode corresponding to the first bulk acoustic wave filter is formed with a tenth area for exposing the first lower electrode, wherein the thickness of the first lower electrode corresponds to the minimum value of the resonant frequency in the first bulk acoustic wave filter and the second bulk acoustic wave filter, the thickness of the second lower electrode corresponds to the frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter, the piezoelectric layer is formed on the first lower electrode and the supporting layer, and the second lower electrode and the first lower electrode are formed with an eleventh area for exposing the piezoelectric layer, wherein the thickness of the piezoelectric layer corresponding to the second bulk acoustic wave filter is different from the thickness of the piezoelectric layer corresponding to the first bulk acoustic wave filter, and the maximum thickness of the piezoelectric layer corresponds to the maximum value of the resonant frequency in the first bulk acoustic wave filter and the second bulk acoustic wave filter, and the piezoelectric layer corresponds to the second bulk acoustic wave filter, and the second bulk acoustic wave filter and the second bulk acoustic filter between the supporting layer and the second lower electrode and the second bulk acoustic wave filter and the second bulk acoustic filter.
Optionally, the first upper electrode is formed on the piezoelectric layer, wherein a thickness of the first upper electrode corresponds to a resonance frequency minimum in the first bulk acoustic wave filter and the second bulk acoustic wave filter, the second upper electrode is formed on the first upper electrode, and the second upper electrode is formed with a fifteenth region for exposing the first upper electrode, wherein a thickness of the second upper electrode corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter, and the first upper electrode and the second upper electrode are formed with a sixteenth region, a seventeenth region, and an eighteenth region, wherein the seventeenth region and the eighteenth region are formed on both sides of the sixteenth region, respectively.
According to another aspect of the application, a manufacturing method of an integrated bulk acoustic wave filter is provided, comprising manufacturing a first substrate, and forming a plurality of bulk acoustic wave filters on the first substrate, wherein the bulk acoustic wave filter comprises a first electrode and a plurality of second electrodes, the sum of the numbers of the plurality of first electrodes and the plurality of second electrodes corresponds to the number of the plurality of bulk acoustic wave filters, and the thicknesses of a first upper electrode and a first lower electrode in the first electrode correspond to the minimum value of resonance frequencies in the plurality of bulk acoustic wave filters, and the thicknesses of a second upper electrode and a second lower electrode in the plurality of second electrodes correspond to the difference of resonance frequencies of any two bulk acoustic wave filters in the plurality of bulk acoustic wave filters.
Optionally, the operation of forming the plurality of bulk acoustic wave filters on the first substrate includes forming a first bulk acoustic wave filter and a second bulk acoustic wave filter on the first substrate.
Optionally, the operation of forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate includes depositing a first upper electrode on the first substrate, wherein a thickness of the first upper electrode corresponds to a resonant frequency minimum in the first bulk acoustic wave filter and the second bulk acoustic wave filter, depositing a piezoelectric layer on the first upper electrode, wherein a thickness of the piezoelectric layer corresponds to a resonant frequency maximum in the first bulk acoustic wave filter and the second bulk acoustic wave filter, depositing a first lower electrode on the piezoelectric layer, wherein a thickness of the first lower electrode corresponds to a resonant frequency minimum in the first bulk acoustic wave filter and the second bulk acoustic wave filter, and depositing a second lower electrode on the first lower electrode using a lift-off process, and forming a first region for exposing the first lower electrode, wherein a thickness of the second lower electrode corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter.
Optionally, the operation of forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate further comprises the steps of etching the second lower electrode and the first lower electrode and forming a second area for exposing the piezoelectric layer, depositing a layer to be etched on the second lower electrode and the first lower electrode, etching the layer to be etched and forming a third area and a fourth area for exposing the second lower electrode and a fifth area for exposing the piezoelectric layer, wherein the third area and the fourth area are respectively located on two sides of the fifth area, depositing a supporting layer on the second lower electrode, the piezoelectric layer and the layer to be etched, etching the layer to be etched and forming a first resonant cavity corresponding to the first bulk acoustic wave filter and a second resonant cavity corresponding to the second bulk acoustic wave filter respectively, depositing the second substrate on the supporting layer, integrally overturning and removing the first substrate.
Optionally, forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate includes depositing a second upper electrode on the first upper electrode using a lift-off process and forming a sixth region for exposing the first upper electrode, wherein a thickness of the second upper electrode corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter.
Optionally, forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate includes etching the second upper electrode and the first upper electrode and forming a seventh region, an eighth region, and a ninth region for exposing the piezoelectric layer, wherein the eighth region and the ninth region are formed on both sides of the seventh region, respectively.
Optionally, the operation of forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate includes depositing a first upper electrode on the first substrate, wherein a thickness of the first upper electrode corresponds to a resonant frequency minimum in the first bulk acoustic wave filter and the second bulk acoustic wave filter, depositing and etching a piezoelectric layer on the first upper electrode, wherein a thickness of the piezoelectric layer corresponding to the second bulk acoustic wave filter and a thickness of the piezoelectric layer corresponding to the first bulk acoustic wave filter are different, and a maximum thickness of the piezoelectric layer corresponds to a resonant frequency maximum in the first bulk acoustic wave filter and the second bulk acoustic wave filter, depositing a first lower electrode on the piezoelectric layer, wherein a thickness of the first lower electrode corresponds to a resonant frequency minimum in the first bulk acoustic wave filter and the second bulk acoustic wave filter, and depositing a second lower electrode on the first lower electrode using a lift-off process, and forming a tenth region for exposing the first lower electrode, wherein a thickness of the second lower electrode corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter.
Optionally, the operation of forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate further comprises etching the second lower electrode and the first lower electrode and forming an eleventh area for exposing the piezoelectric layer, depositing a layer to be etched on the second lower electrode and the first lower electrode, etching the layer to be etched and forming a twelfth area and a thirteenth area for exposing the second lower electrode and a fourteenth area for exposing the piezoelectric layer, wherein the twelfth area and the thirteenth area are respectively located at two sides of the fourteenth area, depositing a supporting layer on the second lower electrode, the piezoelectric layer and the layer to be etched, depositing the second substrate on the supporting layer, integrally overturning and removing the first substrate, and etching the layer to be etched and forming a second resonant cavity respectively corresponding to the first resonant cavity and the second bulk acoustic wave filter.
Optionally, forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate includes depositing a second upper electrode on the first upper electrode using a lift-off process and forming a fifteenth region for exposing the first upper electrode, wherein a thickness of the second upper electrode corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter.
Optionally, forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate includes etching the second upper electrode and the first upper electrode and forming a sixteenth region, a seventeenth region, and an eighteenth region for exposing the piezoelectric layer, wherein the seventeenth region and the eighteenth region are formed on both sides of the sixteenth region, respectively.
The application provides an integrated bulk acoustic wave filter and a manufacturing method of the integrated bulk acoustic wave filter. And because the integrated bulk acoustic wave filter comprises the plurality of bulk acoustic wave filters formed on the first substrate, the flow sheet test can be completed on the plurality of bulk acoustic wave filters at one time by integrating the plurality of bulk acoustic wave filters into one chip.
Further, when the integrated bulk acoustic wave filter is manufactured, the thicknesses of the first upper electrode and the first lower electrode are determined by taking the minimum value of the resonant frequency in the bulk acoustic wave filters as a reference, and then the thicknesses of the second upper electrode and the second lower electrode are determined according to the difference value of the resonant frequencies of any two bulk acoustic wave filters in the bulk acoustic wave filters, so that the integrated bulk acoustic wave filter manufactured by the application can meet the requirement of having different working frequencies. In addition, compared with the integrated bulk acoustic wave filter with different working frequencies generated by etching the electrodes, the integrated bulk acoustic wave filter with different working frequencies generated by depositing the second electrode can reduce the complexity of the process and the manufacturing cost.
In addition, when the plurality of second electrodes 130 are manufactured by the lift-off process, the present application can simultaneously manufacture a semiconductor lead Frame structure (i.e., frame structure) in addition to the requirement that the plurality of bulk acoustic wave filters have different operating frequencies, thereby saving a mask.
The method solves the technical problems that the prior integrated bulk acoustic wave filter in the prior art cannot meet the requirement of having different working frequencies, so that the integrated bulk acoustic wave filter can generate poor frequency band adaptability and resource waste.
The above, as well as additional objectives, advantages, and features of the present application will become apparent to those skilled in the art from the following detailed description of a specific embodiment of the present application when read in conjunction with the accompanying drawings.
Drawings
Some specific embodiments of the application will be described in detail hereinafter by way of example and not by way of limitation with reference to the accompanying drawings. The same reference numbers will be used throughout the drawings to refer to the same or like parts or portions. It will be appreciated by those skilled in the art that the drawings are not necessarily drawn to scale. In the accompanying drawings:
Fig. 1 is a flowchart of a method for manufacturing an integrated bulk acoustic wave filter according to embodiment 1 of the present application;
FIG. 2 is a schematic view of a first upper electrode, a piezoelectric layer and a first lower electrode deposited on a first substrate according to embodiment 1 of the present application;
FIG. 3 is a schematic view of a first region according to embodiment 1 of the present application;
FIG. 4 is a schematic view of a second zone according to embodiment 1 of the present application;
FIG. 5 is a schematic view of a first substrate, a first upper electrode, a piezoelectric layer, a first lower electrode, a second lower electrode, and a layer to be etched according to embodiment 1 of the present application;
FIG. 6 is a schematic view of a third region, a fourth region and a fifth region according to embodiment 1 of the present application;
FIG. 7 is a schematic view of a first substrate, a first upper electrode, a piezoelectric layer, a first lower electrode, a second lower electrode, a layer to be etched, and a support layer according to embodiment 1 of the present application;
FIG. 8 is a schematic view of a first resonant cavity and a second resonant cavity according to embodiment 1 of the present application;
Fig. 9 is a schematic view of a first substrate, a first upper electrode, a piezoelectric layer, a first lower electrode, a second lower electrode, a support layer, and a second substrate according to embodiment 1 of the present application;
FIG. 10 is a schematic view of the first upper electrode, piezoelectric layer, first lower electrode, second lower electrode, support layer and second substrate after flipping and removal of the first substrate according to embodiment 1 of the present application;
FIG. 11 is a schematic view of a first upper electrode, a piezoelectric layer, a first lower electrode, a second lower electrode, a support layer, a second substrate, and a second upper electrode according to embodiment 1 of the present application;
fig. 12 is a schematic diagram of an integrated bulk acoustic wave filter according to embodiment 1 of the present application;
FIG. 13 is a schematic view of a first upper electrode, a piezoelectric layer and a first lower electrode deposited and etched on a first substrate according to embodiment 2 of the present application;
fig. 14 is a schematic view of a tenth area according to embodiment 2 of the present application;
Fig. 15 is a schematic view of an eleventh area according to embodiment 2 of the present application;
FIG. 16 is a schematic view of a first substrate, a first upper electrode, a piezoelectric layer, a first lower electrode, a second lower electrode, and a layer to be etched according to embodiment 2 of the present application;
fig. 17 is a schematic view of a twelfth region, a thirteenth region, and a fourteenth region according to embodiment 2 of the present application;
FIG. 18 is a schematic view of a first substrate, a first upper electrode, a piezoelectric layer, a first lower electrode, a second lower electrode, a layer to be etched, and a support layer according to embodiment 2 of the present application;
fig. 19 is a schematic view of a first resonant cavity and a second resonant cavity according to embodiment 2 of the present application;
FIG. 20 is a schematic view of a first substrate, a first upper electrode, a piezoelectric layer, a first lower electrode, a second lower electrode, a layer to be etched, and a support layer according to embodiment 2 of the present application;
FIG. 21 is a schematic view of the first upper electrode, piezoelectric layer, first lower electrode, second lower electrode, support layer and second substrate after flipping and removal of the first substrate according to embodiment 2 of the present application;
Fig. 22 is a schematic view of a first upper electrode, a piezoelectric layer, a first lower electrode, a second lower electrode, a support layer, a second substrate, and a second upper electrode according to embodiment 2 of the present application;
fig. 23 is a schematic diagram of another integrated bulk acoustic wave filter according to embodiment 2 of the present application.
Detailed Description
It should be noted that, without conflict, the embodiments of the present disclosure and features of the embodiments may be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
In order that those skilled in the art will better understand the present disclosure, a technical solution in the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present disclosure, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without inventive effort, based on the embodiments in this disclosure, shall fall within the scope of the present disclosure.
It should be noted that the terms "first," "second," and the like in the description and claims of the present disclosure and in the foregoing figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the disclosure described herein are, for example, capable of operation in connection with other embodiments. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present application. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
In the following detailed description of the embodiments of the present application, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration only, and in which is shown by way of illustration only, and in which the scope of the application is not limited for ease of illustration. In addition, three dimensional dimensions of length, width and depth should be included in practical fabrication.
According to a first aspect of the present embodiment, a method for manufacturing an integrated bulk acoustic wave filter is provided. Fig. 1 shows a schematic flow chart of the method. Referring to fig. 1, the method includes:
s101, manufacturing a first substrate, and
And S102, forming a plurality of bulk acoustic wave filters on the first substrate, wherein the bulk acoustic wave filters comprise a first electrode and a plurality of second electrodes, the sum of the numbers of the plurality of first electrodes and the plurality of second electrodes corresponds to the number of the plurality of bulk acoustic wave filters, the thicknesses of a first upper electrode and a first lower electrode in the first electrode correspond to the minimum value of resonance frequencies in the plurality of bulk acoustic wave filters, and the thicknesses of a second upper electrode and a second lower electrode in the plurality of second electrodes correspond to the difference value of resonance frequencies of any two bulk acoustic wave filters in the plurality of bulk acoustic wave filters.
By adopting the manufacturing method of the integrated bulk acoustic wave filter provided by the embodiment of the disclosure, the first substrate is manufactured, and a plurality of bulk acoustic wave filters are formed on the first substrate. Wherein the bulk acoustic wave filter includes a first electrode and a plurality of second electrodes, and a sum of the number of the plurality of first electrodes and the plurality of second electrodes corresponds to the number of the plurality of bulk acoustic wave filters. The thicknesses of the first upper electrode and the first lower electrode in the first electrode correspond to the minimum value of the resonance frequencies in the plurality of bulk acoustic wave filters, and the thicknesses of the second upper electrode and the second lower electrode in the plurality of second electrodes correspond to the difference value of the resonance frequencies of any two bulk acoustic wave filters in the plurality of bulk acoustic wave filters.
Thus, unlike the prior art, since the integrated bulk acoustic wave filter of the present application includes a plurality of bulk acoustic wave filters formed on the first substrate, the flow sheet test can be completed for a plurality of bulk acoustic wave filters at one time by integrating the plurality of bulk acoustic wave filters in one chip.
Further, when the integrated bulk acoustic wave filter is manufactured, the thicknesses of the first upper electrode and the first lower electrode are determined by taking the minimum value of the resonant frequency in the bulk acoustic wave filters as a reference, and then the thicknesses of the second upper electrode and the second lower electrode are determined according to the difference value of the resonant frequencies of any two bulk acoustic wave filters in the bulk acoustic wave filters, so that the integrated bulk acoustic wave filter manufactured by the application can meet the requirement of having different working frequencies. In addition, compared with the integrated bulk acoustic wave filter with different working frequencies generated by etching the electrodes, the integrated bulk acoustic wave filter with different working frequencies generated by depositing the second electrode can reduce the complexity of the process and the manufacturing cost.
In addition, when the plurality of second electrodes 130 are manufactured by the lift-off process, the present application can simultaneously manufacture a semiconductor lead Frame structure (i.e., frame structure) in addition to the requirement that the plurality of bulk acoustic wave filters have different operating frequencies, thereby saving a mask.
The method solves the technical problems that the prior integrated bulk acoustic wave filter in the prior art cannot meet the requirement of having different working frequencies, so that the integrated bulk acoustic wave filter can generate poor frequency band adaptability and resource waste.
Example 1
The following specific manufacturing steps of the integrated bulk acoustic wave filter provided by the embodiment of the application are as follows:
referring to fig. 2, first, a first substrate 110 to be removed is fabricated. Alternatively, the first substrate 110 is made of silicon, silicon carbide, or sapphire. Further, a first upper electrode 121 is deposited on one side of the first substrate 110. Wherein the thickness of the first upper electrode 121 corresponds to the minimum value of the resonance frequency in the first bulk acoustic wave filter and the second bulk acoustic wave filter. Preferably, the first upper electrode 121 is made of molybdenum or tungsten, for example, and has uniformity of less than 1%.
Then, a piezoelectric layer 140 is deposited on a side of the first upper electrode 121 remote from the first substrate 110. Wherein the thickness of the piezoelectric layer 140 corresponds to the maximum value of the resonance frequency in the first bulk acoustic wave filter and the second bulk acoustic wave filter. Preferably, the piezoelectric layer 140 is made of aluminum nitride or scandium-doped aluminum nitride, and has uniformity of less than 1%.
Further, the first lower electrode 122 is deposited on a side of the piezoelectric layer 140 remote from the first upper electrode 121. Wherein the thickness of the first lower electrode 122 corresponds to a minimum value of resonance frequencies in the first bulk acoustic wave filter and the second bulk acoustic wave filter. Preferably, the first lower electrode 122 is made of molybdenum or tungsten, for example, and has uniformity of less than 1%.
Referring to fig. 3, in the case where the first lower electrode 122 has been deposited, the second lower electrode 132 is further deposited on a side of the first lower electrode 122 remote from the piezoelectric layer 140 using a lift-off process, and a first region 1221 for exposing the first lower electrode 122 is formed. Wherein the thickness of the second lower electrode 132 corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter. Preferably, the second lower electrode 132 is made of molybdenum or tungsten, for example, and has uniformity of less than 1%.
Thus, in the case where the thickness of the first lower electrode 122 is determined to correspond to the minimum value of the resonance frequency in the first and second bulk acoustic wave filters, the operator can determine the thickness of the second lower electrode 132 to be deposited by simply determining the frequency difference between the first and second bulk acoustic wave filters. And the integrated bulk acoustic wave filter based on the first lower electrode 122 and the second lower electrode 132 described above can achieve the requirement of having different operating frequencies.
In addition, compared with the existing integrated bulk acoustic wave filter with different working frequencies generated by etching the electrodes, the integrated bulk acoustic wave filter with different working frequencies generated by depositing the second electrode 130 can reduce the complexity of the process and the manufacturing cost.
In the present embodiment, the step of depositing the second lower electrode 132 using the lift-off process and forming the first region 1221 for exposing the first lower electrode 122 includes, first, coating a photoresist on a side of the first lower electrode 122 remote from the piezoelectric layer 140 using the lift-off process, exposing, developing, and depositing the second lower electrode 132 using the photoresist having a pattern corresponding to the first region 1221 as a mask. The second lower electrode 132 corresponding to the first region 1221 is then stripped off together with the photoresist, thereby forming a first region 1221 for exposing the first lower electrode 122.
Referring to fig. 4, in the case where the second lower electrode 132 has been deposited, the second lower electrode 132 and the first lower electrode 122 are etched, and a second region 1401 for exposing the piezoelectric layer 140 is formed. Preferably, the etch uniformity is less than 5%.
Referring to fig. 5 to 9, first, a layer 150 to be etched is deposited on the second bottom electrode 132 and the first bottom electrode 122. Then, the layer to be etched 150 is etched, and a third region 1222 and a fourth region 1223 for exposing the second lower electrode 132 and a fifth region 1402 for exposing the piezoelectric layer 140 are formed. Wherein the third region 1222 and the fourth region 1223 are located on both sides of the fifth region 1402, respectively. Further, a support layer 160 is deposited on the second lower electrode 132, the piezoelectric layer 140, and the layer to be etched 150. And then etching the layer to be etched 150, and forming a first resonant cavity corresponding to the first bulk acoustic wave filter and a second resonant cavity corresponding to the second bulk acoustic wave filter, respectively. Finally, a second substrate 170 is deposited on the support layer 160, the whole is flipped over, and the first substrate 110 to be removed is removed. Thereby ultimately forming the structure shown in fig. 10.
Referring to fig. 11, a second upper electrode 131 is deposited on a side of the first upper electrode 121 remote from the piezoelectric layer 140 using a lift-off process, and a sixth region 1211 for exposing the first upper electrode 121 is formed. Wherein the thickness of the second upper electrode 131 corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter. Preferably, the second upper electrode 131 is made of molybdenum or tungsten, for example, and has uniformity of less than 1%.
Thus, in the case where the thickness of the first upper electrode 121 is determined to correspond to the minimum value of the resonance frequencies in the first and second bulk acoustic wave filters, the operator can determine the thickness of the second upper electrode 131 to be deposited by simply determining the frequency difference between the first and second bulk acoustic wave filters. And the integrated bulk acoustic wave filter generated based on the first upper electrode 121 and the second upper electrode 131 can meet the requirement of having different operating frequencies.
In addition, compared with the existing integrated bulk acoustic wave filter with different working frequencies generated by etching the electrodes, the integrated bulk acoustic wave filter with different working frequencies generated by depositing the second electrode 130 can reduce the complexity of the process and the manufacturing cost.
In the present embodiment, the step of depositing the second upper electrode 131 using the lift-off process and forming the sixth region 1211 for exposing the first upper electrode 121 includes, first, coating a photoresist on a side of the first upper electrode 121 remote from the piezoelectric layer 140 using the lift-off process, exposing, developing, and depositing the second upper electrode 131 using the photoresist having a pattern corresponding to the sixth region 1211 as a mask. The second upper electrode 131 corresponding to the sixth region 1211 is then stripped off together with the photoresist, thereby forming the sixth region 1211 for exposing the first upper electrode 121.
Referring to fig. 12, in the case where the second upper electrode 131 has been deposited, the second upper electrode 131 and the first upper electrode 121 are etched, and a seventh region 1403, an eighth region 1404, and a ninth region 1405 for exposing the piezoelectric layer 140 are formed. Among them, an eighth region 1404 and a ninth region 1405 are formed on both sides of the seventh region 1403, respectively. Preferably, the etch uniformity is less than 5%.
Example 2
In addition, in order to further increase the range of the working frequency of the integrated bulk acoustic wave filter and ensure that the integrated bulk acoustic wave filter can meet the requirement of having different working frequencies, the application also provides another integrated bulk acoustic wave filter, which comprises the following specific manufacturing steps:
Referring to fig. 13, first, a first substrate 110 to be removed is fabricated. Alternatively, the first substrate 110 is made of silicon, silicon carbide, or sapphire. Further, a first upper electrode 121 is deposited on one side of the first substrate 110. Wherein the thickness of the first upper electrode 121 corresponds to the minimum value of the resonance frequency in the first bulk acoustic wave filter and the second bulk acoustic wave filter. Preferably, the first upper electrode 121 is made of molybdenum or tungsten, for example, and has uniformity of less than 1%.
Then, the piezoelectric layer 140 is deposited and etched on a side of the first upper electrode 121 remote from the first substrate 110. Wherein the thickness of the piezoelectric layer corresponding to the second bulk acoustic wave filter is different from the thickness of the piezoelectric layer corresponding to the first bulk acoustic wave filter. And in the present embodiment, the maximum thickness of the piezoelectric layer 140 corresponds to the maximum value of the resonance frequency in the first bulk acoustic wave filter and the second bulk acoustic wave filter.
That is, when the frequency range requirement of the integrated bulk acoustic wave filter cannot be met only by depositing the second electrode 130, the frequency range of the integrated bulk acoustic wave filter can be further increased by etching the piezoelectric layer 140, so as to meet the requirement of having different power frequencies.
Further, the first lower electrode 122 is deposited on a side of the piezoelectric layer 140 remote from the first upper electrode 121. Wherein the thickness of the first lower electrode 122 corresponds to a minimum value of resonance frequencies in the first bulk acoustic wave filter and the second bulk acoustic wave filter. Preferably, the first lower electrode 122 is made of molybdenum or tungsten, for example, and has uniformity of less than 1%.
Then, as shown in fig. 14, in the case where the first lower electrode 122 has been deposited, the second lower electrode 132 is further deposited on a side of the first lower electrode 122 remote from the piezoelectric layer 140 using a lift-off process, and a tenth region 1224 for exposing the first lower electrode 122 is formed. Wherein the thickness of the second lower electrode 132 corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter. Preferably, the second lower electrode 132 is made of molybdenum or tungsten, for example, and has uniformity of less than 1%.
Referring to fig. 15, in the case where the second lower electrode 132 has been deposited, the second lower electrode 132 and the first lower electrode 122 are etched, and an eleventh region 1406 for exposing the piezoelectric layer 140 is formed. Preferably, the etch uniformity is less than 5%.
Referring to fig. 16 to 20, first, a layer 150 to be etched is deposited on the second lower electrode 132 and the first lower electrode 122. Then, the layer to be etched 150 is etched, and a twelfth region 1225 and a thirteenth region 1226 for exposing the second lower electrode 132 and a fourteenth region 1407 for exposing the piezoelectric layer 140 are formed. Among them, the twelfth area 1225 and the thirteenth area 1226 are located on both sides of the fourteenth area 1407, respectively. Further, a support layer 160 is deposited on the second lower electrode 132, the piezoelectric layer 140, and the layer to be etched 150. And then etching the layer to be etched 150, and forming a first resonant cavity corresponding to the first bulk acoustic wave filter and a second resonant cavity corresponding to the second bulk acoustic wave filter, respectively. Finally, a second substrate 170 is deposited on the support layer 160, the whole is flipped over, and the first substrate 110 to be removed is removed. Thereby ultimately forming the structure shown in fig. 21.
Referring to fig. 22, a second upper electrode 131 is deposited on a side of the first upper electrode 121 remote from the piezoelectric layer 140 using a lift-off process, and a fifteenth region 1212 for exposing the first upper electrode 121 is formed. Wherein the thickness of the second upper electrode 131 corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter. Preferably, the second upper electrode 131 is made of molybdenum or tungsten, for example, and has uniformity of less than 1%.
Referring to fig. 23, in the case where the second upper electrode 131 has been deposited, the second upper electrode 131 and the first upper electrode 121 are etched, and a sixteenth region 1408, a seventeenth region 1409, and an eighteenth region 1410 for exposing the piezoelectric layer 140 are formed. Among them, a seventeenth region 1409 and an eighteenth region 1410 are formed on both sides of the sixteenth region 1408, respectively. Preferably, the etch uniformity is less than 5%.
According to another aspect of the present application, there is also provided an integrated bulk acoustic wave filter including a second substrate 170 and a plurality of bulk acoustic wave filters, wherein the plurality of bulk acoustic wave filters are formed on the second substrate 170, and the bulk acoustic wave filter includes a first electrode 120 and a plurality of second electrodes 130, a sum of numbers of the first electrode 120 and the plurality of second electrodes 130 corresponds to a number of the plurality of bulk acoustic wave filters, and thicknesses of a first upper electrode 121 and a first lower electrode 122 in the first electrode 120 correspond to a minimum value of resonance frequencies in the bulk acoustic wave filters, and thicknesses of a second upper electrode 131 and a second lower electrode 132 in the plurality of second electrodes 130 correspond to a difference of resonance frequencies of any two of the plurality of bulk acoustic wave filters.
Alternatively, the plurality of bulk acoustic wave filters include first and second bulk acoustic wave filters, and the first and second bulk acoustic wave filters include a support layer 160 and a piezoelectric layer 140, wherein the support layer 160 is formed on the second substrate 170, a second lower electrode 132 is formed on the support layer 160, the first lower electrode 122 is formed on the second lower electrode 132, and the second lower electrode 132 corresponding to the first bulk acoustic wave filter is formed with a first region 1221 for exposing the first lower electrode 122, wherein a thickness of the first lower electrode 122 corresponds to a frequency difference between a minimum value of a resonance frequency in the first and second bulk acoustic wave filters and a thickness of the second lower electrode 132 corresponds to a frequency difference between the first and second bulk acoustic wave filters, and the piezoelectric layer 140 is formed on the first lower electrode 122 and the support layer 160, and the second lower electrode 122 is formed with a second region 1401 exposing the piezoelectric layer 140, wherein a thickness of the piezoelectric layer 140 corresponds to a maximum value of a resonance frequency in the first and second bulk acoustic wave filters, and a resonance frequency between the support layer 132 corresponds to a resonance frequency in the first and second bulk acoustic wave filters, and the first bulk acoustic wave filter and the second bulk acoustic wave filter and the piezoelectric layer 140 is formed between the second lower electrode 132 and the first bulk acoustic wave filter and the second bulk acoustic wave filter.
Alternatively, the first upper electrode 121 is formed on the piezoelectric layer 140, wherein the thickness of the first upper electrode 121 corresponds to a resonance frequency minimum in the first bulk acoustic wave filter and the second bulk acoustic wave filter, the second upper electrode 131 is formed on the first upper electrode 121, and the second upper electrode 131 is formed with a sixth region 1211 for exposing the first upper electrode 121, wherein the thickness of the second upper electrode 131 corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter, and the first upper electrode 121 and the second upper electrode 131 are formed with a seventh region 1403, an eighth region 1404, and a ninth region 1405 for exposing the piezoelectric layer 140, wherein the eighth region 1404 and the ninth region 1405 are formed at both sides of the seventh region 1403, respectively.
Alternatively, the first bulk acoustic wave filter and the second bulk acoustic wave filter include a support layer 160 and a piezoelectric layer 140, wherein the support layer 160 is formed on the second substrate 170, the second lower electrode 132 is formed on the support layer 160, the first lower electrode 122 is formed on the second lower electrode 132, and the second lower electrode 132 corresponding to the first bulk acoustic wave filter is formed with a tenth region 1224 for exposing the first lower electrode 122, wherein a thickness of the first lower electrode 122 corresponds to a frequency difference between a thickness of the second lower electrode 132 and a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter, and the piezoelectric layer 140 is formed on the first lower electrode 122 and the support layer 160, and the second lower electrode 132 and the first lower electrode 122 are formed with an eleventh region 1406 for exposing the piezoelectric layer 140, wherein a thickness of the piezoelectric layer corresponding to the second bulk acoustic wave filter and a thickness of the piezoelectric layer corresponding to the second bulk acoustic wave filter are different, and a maximum thickness of the piezoelectric layer 140 corresponds to a maximum thickness of the second bulk acoustic wave filter and a resonance frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter, and the piezoelectric layer 140 and the first bulk acoustic wave filter, and the second bulk acoustic wave filter, and the first bulk acoustic filter, and the second bulk acoustic wave filter, and the second bulk acoustic filter, and the resonator filter.
Alternatively, the first upper electrode 121 is formed on the piezoelectric layer 140, wherein a thickness of the first upper electrode 121 corresponds to a resonance frequency minimum value in the first bulk acoustic wave filter and the second bulk acoustic wave filter, the second upper electrode 131 is formed on the first upper electrode 121, and the second upper electrode 131 is formed with a fifteenth region 1212 for exposing the first upper electrode 121, wherein a thickness of the second upper electrode 131 corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter, and the first upper electrode 121 and the second upper electrode 131 are formed with a sixteenth region 1408, a seventeenth region 1409, and an eighteenth region 1410 for exposing the piezoelectric layer 140, wherein the seventeenth region 1409 and the eighteenth region 1410 are formed at both sides of the sixteenth region 1408, respectively.
Because the integrated bulk acoustic wave filter comprises the plurality of bulk acoustic wave filters formed on the first substrate, the flow sheet test can be completed on the plurality of bulk acoustic wave filters at one time by integrating the plurality of bulk acoustic wave filters into one chip.
Further, when the integrated bulk acoustic wave filter is manufactured, the thicknesses of the first upper electrode and the first lower electrode are determined by taking the minimum value of the resonant frequency in the bulk acoustic wave filters as a reference, and then the thicknesses of the second upper electrode and the second lower electrode are determined according to the difference value of the resonant frequencies of any two bulk acoustic wave filters in the bulk acoustic wave filters, so that the integrated bulk acoustic wave filter manufactured by the application can meet the requirement of having different working frequencies. In addition, compared with the integrated bulk acoustic wave filter with different working frequencies generated by etching the electrodes, the integrated bulk acoustic wave filter with different working frequencies generated by depositing the second electrode can reduce the complexity of the process and the manufacturing cost.
The method solves the technical problems that the prior integrated bulk acoustic wave filter in the prior art cannot meet the requirement of having different working frequencies, so that the integrated bulk acoustic wave filter can generate poor frequency band adaptability and resource waste.
In addition, when the plurality of second electrodes 130 are manufactured by the lift-off process, the present application can simultaneously manufacture a semiconductor lead Frame structure (i.e., frame structure) in addition to the requirement that the plurality of bulk acoustic wave filters have different operating frequencies, thereby saving a mask.
The relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present disclosure unless it is specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective parts shown in the drawings are not drawn in actual scale for convenience of description. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate. In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of the exemplary embodiments may have different values. It should be noted that like reference numerals and letters refer to like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
Spatially relative terms, such as "above," "upper" and "upper surface," "above" and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "above" or "over" other devices or structures would then be oriented "below" or "beneath" the other devices or structures. Thus, the process is carried out, the exemplary term "above" may be included. Upper and lower. Two orientations below. The device may also be positioned in other different ways (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
In the description of the present disclosure, it should be understood that the azimuth terms such as "front, rear, upper, lower, left, right", "transverse, vertical, horizontal", and "top, bottom", etc., are generally based on the azimuth or positional relationships shown in the drawings, and are merely for convenience of describing the present disclosure and simplifying the description, and the azimuth terms do not indicate and imply that the apparatus or element to be referred to must have a specific azimuth or be constructed and operated in a specific azimuth, and thus should not be construed as limiting the scope of protection of the present disclosure, and the azimuth terms "inside and outside" refer to inside and outside with respect to the outline of each component itself.
The present application is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present application are intended to be included in the scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.
Claims (15)
1. An integrated bulk acoustic wave filter is characterized by comprising a second substrate (170) and a plurality of bulk acoustic wave filters, wherein the plurality of bulk acoustic wave filters are formed on the second substrate (170), and the bulk acoustic wave filters comprise a first electrode (120) and a plurality of second electrodes (130), the sum of the numbers of the first electrode (120) and the plurality of second electrodes (130) corresponds to the number of the plurality of bulk acoustic wave filters, and the thicknesses of a first upper electrode (121) and a first lower electrode (122) in the first electrode (120) correspond to the minimum value of resonant frequencies in the bulk acoustic wave filters, and the thicknesses of a second upper electrode (131) and a second lower electrode (132) in the plurality of second electrodes (130) correspond to the difference of resonant frequencies of any two bulk acoustic wave filters in the plurality of bulk acoustic wave filters.
2. The integrated bulk acoustic wave filter of claim 1, wherein the plurality of bulk acoustic wave filters comprises a first bulk acoustic wave filter and a second bulk acoustic wave filter, and the first bulk acoustic wave filter and the second bulk acoustic wave filter comprise a support layer (160) and a piezoelectric layer (140), wherein
The support layer (160) is formed on the second substrate (170);
The second lower electrode (132) is formed on the support layer (160), the first lower electrode (122) is formed on the second lower electrode (132), and a second lower electrode (132) corresponding to the first bulk acoustic wave filter is formed with a first region (1221) for exposing the first lower electrode (122), wherein a thickness of the first lower electrode (122) corresponds to a resonance frequency minimum value in the first and second bulk acoustic wave filters, and a thickness of the second lower electrode (132) corresponds to a frequency difference value between the first and second bulk acoustic wave filters;
The piezoelectric layer (140) is formed on the first lower electrode (122) and the support layer (160), and the second lower electrode (132) and the first lower electrode (122) are formed with a second region (1401) for exposing the piezoelectric layer (140), wherein the thickness of the piezoelectric layer (140) corresponds to the maximum value of resonance frequencies in the first bulk acoustic wave filter and the second bulk acoustic wave filter, and
A first resonant cavity corresponding to the first bulk acoustic wave filter and a second resonant cavity corresponding to the second bulk acoustic wave filter are formed between the support layer (160) and the second lower electrode (132), the first lower electrode (122) and the piezoelectric layer (140).
3. The integrated bulk acoustic wave filter according to claim 2, characterized in that the first upper electrode (121) is formed on the piezoelectric layer (140), wherein the thickness of the first upper electrode (121) corresponds to a resonance frequency minimum in the first bulk acoustic wave filter and the second bulk acoustic wave filter;
The second upper electrode (131) is formed on the first upper electrode (121), and the second upper electrode (131) is formed with a sixth region (1211) for exposing the first upper electrode (121), wherein the thickness of the second upper electrode (131) corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter, and
The first upper electrode (121) and the second upper electrode (131) are formed with a seventh region (1403), an eighth region (1404), and a ninth region (1405) for exposing the piezoelectric layer (140), wherein the eighth region (1404) and the ninth region (1405) are formed on both sides of the seventh region (1403), respectively.
4. An integrated bulk acoustic wave filter according to claim 3, characterized in that the first bulk acoustic wave filter and the second bulk acoustic wave filter comprise a support layer (160) and a piezoelectric layer (140), wherein
The support layer (160) is formed on the second substrate (170);
The second lower electrode (132) is formed on the support layer (160), the first lower electrode (122) is formed on the second lower electrode (132), and a tenth region (1224) for exposing the first lower electrode (122) is formed on the second lower electrode (132) corresponding to the first bulk acoustic wave filter, wherein the thickness of the first lower electrode (122) corresponds to a resonance frequency minimum value in the first and second bulk acoustic wave filters, and the thickness of the second lower electrode (132) corresponds to a frequency difference value between the first and second bulk acoustic wave filters;
the piezoelectric layer (140) is formed on the first lower electrode (122) and the supporting layer (160), and the second lower electrode (132) and the first lower electrode (122) are formed with an eleventh region (1406) for exposing the piezoelectric layer (140), wherein the thickness of the piezoelectric layer corresponding to the second bulk acoustic wave filter and the thickness of the piezoelectric layer corresponding to the first bulk acoustic wave filter are different, and the maximum thickness of the piezoelectric layer (140) corresponds to the maximum value of resonance frequencies in the first bulk acoustic wave filter and the second bulk acoustic wave filter, and
A first resonant cavity corresponding to the first bulk acoustic wave filter and a second resonant cavity corresponding to the second bulk acoustic wave filter are formed between the support layer (160) and the second lower electrode (132), the first lower electrode (122) and the piezoelectric layer (140).
5. The integrated bulk acoustic wave filter according to claim 4, characterized in that the first upper electrode (121) is formed on the piezoelectric layer (140), wherein the thickness of the first upper electrode (121) corresponds to a resonance frequency minimum in the first bulk acoustic wave filter and the second bulk acoustic wave filter;
The second upper electrode (131) is formed on the first upper electrode (121), and the second upper electrode (131) is formed with a fifteenth region (1212) for exposing the first upper electrode (121), wherein the thickness of the second upper electrode (131) corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter, and
The first upper electrode (121) and the second upper electrode (131) are formed with a sixteenth region (1408), a seventeenth region (1409), and an eighteenth region (1410) for exposing the piezoelectric layer (140), wherein the seventeenth region (1409) and the eighteenth region (1410) are formed on both sides of the sixteenth region (1408), respectively.
6. A method of making an integrated bulk acoustic wave filter, comprising:
fabricating a first substrate (110), and
A plurality of bulk acoustic wave filters are formed on the first substrate (110), wherein the bulk acoustic wave filters include a first electrode (120) and a plurality of second electrodes (130), a sum of numbers of the first electrode (120) and the plurality of second electrodes (130) corresponds to the number of the plurality of bulk acoustic wave filters, and thicknesses of a first upper electrode (121) and a first lower electrode (122) in the first electrode (120) correspond to a resonance frequency minimum value in the plurality of bulk acoustic wave filters, and thicknesses of a second upper electrode (131) and a second lower electrode (132) in the plurality of second electrodes (130) correspond to a difference of resonance frequencies of any two bulk acoustic wave filters in the plurality of bulk acoustic wave filters.
7. The method of manufacturing according to claim 6, wherein forming a plurality of bulk acoustic wave filters on the first substrate (110) comprises:
A first bulk acoustic wave filter and a second bulk acoustic wave filter are formed on the first substrate (110).
8. The method of manufacturing of claim 7, wherein forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate (110) comprises:
Depositing the first upper electrode (121) on the first substrate (110), wherein a thickness of the first upper electrode (121) corresponds to a resonance frequency minimum in the first bulk acoustic wave filter and the second bulk acoustic wave filter;
Depositing a piezoelectric layer (140) on the first upper electrode (121), wherein a thickness of the piezoelectric layer (140) corresponds to a resonance frequency maximum in the first bulk acoustic wave filter and the second bulk acoustic wave filter;
Depositing the first lower electrode (122) on the piezoelectric layer (140), wherein the thickness of the first lower electrode (122) corresponds to the minimum value of the resonance frequency in the first bulk acoustic wave filter and the second bulk acoustic wave filter, and
Depositing the second lower electrode (132) on the first lower electrode (122) using a lift-off process, and forming a first region (1221) for exposing the first lower electrode (122), wherein a thickness of the second lower electrode (132) corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter.
9. The method of manufacturing of claim 8, wherein forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate (110) further comprises:
Etching the second lower electrode (132) and the first lower electrode (122), and forming a second region (1401) for exposing the piezoelectric layer (140);
Depositing a layer (150) to be etched on the second lower electrode (132) and the first lower electrode (122);
Etching the layer (150) to be etched and forming a third region (1222) and a fourth region (1223) for exposing the second lower electrode (132) and a fifth region (1402) for exposing the piezoelectric layer (140), wherein the third region (1222) and the fourth region (1223) are located on both sides of the fifth region (1402), respectively;
Depositing a support layer (160) on the second lower electrode (132), the piezoelectric layer (140) and the layer (150) to be etched;
etching the layer (150) to be etched and forming a first resonant cavity corresponding to the first bulk acoustic wave filter and a second resonant cavity corresponding to the second bulk acoustic wave filter, respectively, and
A second substrate (170) is deposited on the support layer (160), the whole is flipped over, and the first substrate (110) is removed.
10. The method of manufacturing of claim 9, wherein forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate (110) comprises:
Depositing the second upper electrode (131) on the first upper electrode (121) using a lift-off process, and forming a sixth region (1211) for exposing the first upper electrode (121), wherein a thickness of the second upper electrode (131) corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter.
11. The method of manufacturing of claim 10, wherein forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate (110) comprises:
-etching the second upper electrode (131) and the first upper electrode (121), and forming a seventh region (1403), an eighth region (1404) and a ninth region (1405) for exposing the piezoelectric layer (140), wherein the eighth region (1404) and the ninth region (1405) are formed on both sides of the seventh region (1403), respectively.
12. The method of manufacturing of claim 7, wherein forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate (110) comprises:
Depositing the first upper electrode (121) on the first substrate (110), wherein a thickness of the first upper electrode (121) corresponds to a resonance frequency minimum in the first bulk acoustic wave filter and the second bulk acoustic wave filter;
depositing and etching a piezoelectric layer (140) on the first upper electrode (121), wherein a piezoelectric layer thickness corresponding to the second bulk acoustic wave filter and a piezoelectric layer thickness corresponding to the first bulk acoustic wave filter are different, and a maximum thickness of the piezoelectric layer (140) corresponds to a resonance frequency maximum in the first bulk acoustic wave filter and the second bulk acoustic wave filter;
Depositing the first lower electrode (122) on the piezoelectric layer (140), wherein the thickness of the first lower electrode (122) corresponds to the minimum value of the resonance frequency in the first bulk acoustic wave filter and the second bulk acoustic wave filter, and
A second lower electrode (132) is deposited on the first lower electrode (122) using a lift-off process, and a tenth region (1224) is formed for exposing the first lower electrode (122), wherein a thickness of the second lower electrode (132) corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter.
13. The method of manufacturing of claim 12, wherein the operation of forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate (110) further comprises:
etching the second lower electrode (132) and the first lower electrode (122) and forming an eleventh region (1406) for exposing the piezoelectric layer (140);
Depositing a layer (150) to be etched on the second lower electrode (132) and the first lower electrode (122);
etching the layer (150) to be etched, and forming twelfth and thirteenth regions (1225, 1226) for exposing the second lower electrode (132) and a fourteenth region (1407) for exposing the piezoelectric layer (140), wherein the twelfth and thirteenth regions (1225, 1226) are located on both sides of the fourteenth region (1407), respectively;
-depositing a support layer (160) on the second lower electrode (132), the piezoelectric layer (140) and the layer to be etched (150);
depositing a second substrate (170) on the support layer (160), turning over the whole and removing the first substrate (110), and
And corroding the layer (150) to be corroded, and forming a first resonant cavity and a second resonant cavity which correspond to the first bulk acoustic wave filter and the second bulk acoustic wave filter respectively.
14. The method of manufacturing of claim 13, wherein forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate (110) comprises:
A second upper electrode (131) is deposited on the first upper electrode (121) using a lift-off process, and a fifteenth region (1212) for exposing the first upper electrode (121) is formed, wherein a thickness of the second upper electrode (131) corresponds to a frequency difference between the first bulk acoustic wave filter and the second bulk acoustic wave filter.
15. The method of manufacturing of claim 14, wherein forming the first bulk acoustic wave filter and the second bulk acoustic wave filter on the first substrate (110) comprises:
-etching the second upper electrode (131) and the first upper electrode (121), and forming a sixteenth region (1408), a seventeenth region (1409) and an eighteenth region (1410) for exposing the piezoelectric layer (140), wherein the seventeenth region (1409) and the eighteenth region (1410) are formed on both sides of the sixteenth region (1408), respectively.
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