CN120453204A - Wafer surface cleaning device - Google Patents
Wafer surface cleaning deviceInfo
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- CN120453204A CN120453204A CN202510954188.1A CN202510954188A CN120453204A CN 120453204 A CN120453204 A CN 120453204A CN 202510954188 A CN202510954188 A CN 202510954188A CN 120453204 A CN120453204 A CN 120453204A
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Abstract
本发明公开了晶圆表面清洁装置，其包括清洗槽，其中晶圆载具沿着上下方向插装至清洗槽中，清洁装置还包括由下而上依次布局且同步运动的溢流机构和待清洗面处理机构。本发明一方面通过采用溢流方式，配合表面液膜形成的阻碍，实现对清洗液面下降速度的精准控制，从而确保清洗液面保持平稳；另一方面通过溢流机构和待清洗面处理机构同步下行运动，实现气流相对清洁液面的喷射高度始终不变的将清洁液溢流排出，再由第一、二气流的吹扫和协作以保持交界处清洗液面与晶圆待清洗面相垂直并形成不受液位波动影响的液膜，有效抑制清洗液沿着晶圆表面爬升的趋势，从而降低清洗液大范围残留至晶圆表面的概率并自上而下逐渐实现晶圆表面的无痕干燥。
The present invention discloses a wafer surface cleaning device, which includes a cleaning tank, wherein a wafer carrier is inserted into the cleaning tank along the up-down direction, and the cleaning device also includes an overflow mechanism and a surface treatment mechanism to be cleaned that are arranged in sequence from bottom to top and move synchronously. On the one hand, the present invention adopts an overflow method, cooperates with the obstruction formed by the surface liquid film, and realizes precise control of the descending speed of the cleaning liquid level, thereby ensuring that the cleaning liquid level remains stable; on the other hand, the overflow mechanism and the surface treatment mechanism to be cleaned move downward synchronously, so that the airflow is discharged with the jet height relative to the cleaning liquid level unchanged, and then the first and second airflows are purged and cooperated to keep the cleaning liquid level at the junction perpendicular to the wafer surface to form a liquid film that is not affected by liquid level fluctuations, effectively suppressing the tendency of the cleaning liquid to climb along the wafer surface, thereby reducing the probability of the cleaning liquid remaining on the wafer surface in a large range and gradually achieving traceless drying of the wafer surface from top to bottom.
Description
Technical Field
The invention belongs to the technical field of semiconductor processing, and particularly relates to a wafer surface cleaning device.
Background
In the semiconductor industry, after a wafer wet process, the residual chemical agent on the wafer process surface is usually required to be cleaned and dried, so that the cleaning of the chemical agent on the wafer process surface is ensured, and the number of particles reaches the requirement of a subsequent process after drying.
At present, the conventional cleaning process comprises (1) soaking and (2) drying, wherein the wafer is loaded on a carrier, and the carrier is immersed in a cleaning tank containing cleaning liquid to complete soaking, and meanwhile, the drying means mainly comprise high-purity nitrogen drying and marangoni drying.
However, in the above-described drying process, the following technical drawbacks are liable to occur:
1. The method is characterized in that high-purity nitrogen is adopted for drying, the method is mainly based on the flow unloading of the soaking liquid, the exposed wafer part is air-dried by adopting high-purity nitrogen to blow and blow, and on the surface, although the method is simple and efficient, when the gas acts on the surface of the wafer, the water drops are splashed, so that the water drops are reintroduced into the blow-dried position, water marks are formed after the blow-dried position is blow-dried, the water marks are very difficult to clean, and if deep chemical liquid cleaning is not carried out, the wafer is scrapped;
2. In a drying mode based on the marangoni principle, when two liquids with different surface tension are mainly used for contact, a liquid film (also called an IPA liquid film or an isopropanol liquid film) based on the surface keeps flowing from a region with low surface tension to a region with high surface tension, meanwhile, in the bottom discharge of a self-cleaning groove under self-weight, as the liquid level descends, water flows to the middle part to be converged, so that the liquid film keeps in contact with the surface of a wafer, and residual water drops on the surface are volatilized and taken away by the liquid film with the contact along with the exposure of the wafer, and traceless drying is realized.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide an improved wafer surface cleaning device.
In order to solve the technical problems, the invention adopts the following technical scheme:
A wafer surface cleaning device comprises a cleaning tank, wherein a wafer carrier is inserted into the cleaning tank along the up-down direction, a surface to be cleaned formed by a wafer is soaked in cleaning liquid, the cleaning device further comprises an overflow mechanism and a surface to be cleaned processing mechanism which are sequentially distributed from bottom to top and synchronously move, wherein the overflow mechanism is provided with an overflow passage, the surface to be cleaned processing mechanism is provided with a plurality of air flows which are formed by liquid gasification and are volatile, the plurality of air flows comprise a first air flow which is blown to the surface to be cleaned exposed to the cleaning liquid surface to form dryness, a second air flow which is blown to the junction of the cleaning liquid surface and the surface to be cleaned to form a liquid film which gradually covers the cleaning liquid surface, the cleaning liquid is discharged from the overflow passage along with the descending movement of the overflow mechanism, and the first air flow and the second air flow are simultaneously blown and cooperated so that the cleaning liquid surface close to the junction is kept perpendicular to the surface to be cleaned and the surface to be cleaned, and the surface to be cleaned is gradually dried. That is, the application controls the descending speed of the cleaning liquid level based on the descending of the overflow mechanism to form stable liquid level, reduces or eliminates the surface tension of the cleaning liquid by the sweeping and the cooperation of the first air flow and the second air flow, inhibits the climbing trend of the cleaning liquid along the surface of the wafer in the descending of the liquid level, keeps the cleaning liquid level at the junction vertical to the surface to be cleaned of the wafer, reduces the probability that the cleaning liquid remains on the surface of the wafer in a large range, and simultaneously gradually increases the area of the exposed part along with the descending of the cleaning liquid level, and the second air flow covers the whole exposed part to form dryness under the continuous assistance of the liquid film, and volatilizes the gas on the surface of the wafer to take away the residual water drops on the surface to realize traceless drying.
According to a specific implementation and preferred aspect of the invention, the overflow mechanism comprises an overflow groove arranged on one side of the surface to be cleaned and forming an overflow port, a liquid collecting groove arranged below the overflow groove, and an overflow pipeline which is communicated with the overflow groove and the liquid collecting groove and can synchronously stretch along with the up-and-down movement of the overflow groove, wherein an overflow passage is formed among the overflow groove, the overflow pipeline and the liquid collecting groove.
Preferably, the overflow port comprises a plurality of overflow notches which are distributed at intervals along the width direction of the cleaning tank, and the cleaning liquid is shunted through the plurality of overflow notches and enters the overflow tank. Here, based on a plurality of overflow breach reposition of redundant personnel and form the buffering, effectively promote the mild degree of washing liquid overflow discharge, further reduce the undulant that the flowing back produced, ensure the stability of marangoni effect.
Preferably, the overflow tank comprises a first side tank plate, a second side tank plate, a tank end plate and a tank bottom plate, wherein the first side tank plate and the second side tank plate are distributed at intervals from inside to outside along the thickness direction of the cleaning tank, the tank end plate is connected between two opposite sides of the first side tank plate and the second side tank plate, the tank bottom plate is connected between the bottoms of the first side tank plate and the second side tank plate, the first side tank plate forms a plurality of comb teeth which are distributed at intervals along the width direction of the cleaning tank from the top, overflow gaps are formed between every two adjacent comb teeth, and an overflow pipeline is connected between the tank bottom plate and the liquid collecting tank. The structure is simple, and the assembly and the implementation are convenient.
Specifically, the first side groove plate is bent from the top to the direction far away from the surface to be cleaned and forms a bending part, and a plurality of comb teeth are distributed at the end part of the bending part far away from the surface to be cleaned. Here, the overflow notch is far away from the surface to be cleaned, so that the fluctuation of the cleaning liquid level near the surface to be cleaned caused by liquid discharge is further reduced.
Further, the tank bottom plate extends in an up-down inclined manner in the width direction of the cleaning tank, and the overflow pipeline is connected to the lower portion of the tank bottom plate, and/or comprises a plurality of pipeline split bodies which are sequentially sleeved from top to bottom, and the calibers of the plurality of pipeline split bodies are gradually increased from top to bottom. Here, the discharge and collection of the cleaning liquid are facilitated.
According to a further specific and preferred aspect of the invention, the plurality of air streams employ isopropanol, the first air stream being sprayed onto the surface to be cleaned and displacing residual cleaning liquid, the second air stream being sprayed onto the interface between the cleaning liquid level and the surface to be cleaned and gradually forming an isopropanol liquid film covering the cleaning liquid level along the overflow direction. The method utilizes the volatile property of isopropyl alcohol (IPA) to replace the residual cleaning liquid on the surface of the wafer so as to improve the drying effect, and simultaneously, based on the formed isopropyl alcohol liquid film covering the cleaning liquid surface, the method weakens the surface tension of the cleaning liquid, thereby being beneficial to stably forming the Marangoni effect.
Preferably, the surface treatment mechanism to be cleaned comprises an injection module and an air flow supply part which are fixedly connected to the top of the overflow groove, wherein a main cavity communicated with the air flow supply part, and a first sub-cavity and a second sub-cavity which are vertically distributed on one side of the main cavity and are respectively communicated with the main cavity are formed in the injection module, and after entering the main cavity, the air flow is split into the first sub-cavity and the second sub-cavity to form a first air flow and a second air flow. Here, based on same cavity implementation reposition of redundant personnel in order to form first, two air currents, not only be favorable to simplifying the structure, realize compact structure, be convenient for control air current stable output simultaneously.
Specifically, the volume of the first sub-cavity is larger than that of the second sub-cavity, and the flow speed of the first air flow sprayed from the first sub-cavity is smaller than that of the second air flow sprayed from the second sub-cavity. Here, by controlling the volume difference of the first and second chambers, the control of the flow rates of the first and second air streams is realized, so that the flow rates of the multiple air streams blown to the surface of the wafer are precisely controlled (damage to the surface of the wafer caused by excessive isopropyl alcohol air stream is avoided), and a uniform IPA liquid film is ensured to be formed on the cleaning liquid surface.
Preferably, a first diversion hole and a second diversion hole which are respectively communicated with the first diversion cavity and the second diversion cavity are formed on the main cavity, the first diversion cavity and the second diversion cavity form a first jet opening and a second jet opening correspondingly from one side, the first diversion hole and the first jet opening are distributed in a vertically staggered mode, and the second diversion hole and the second jet opening are distributed in a vertically staggered mode. The first air flow and the second air flow after being split form stable jet air pressure in the corresponding split cavities, so that stable output of the first air flow and the second air flow is ensured.
Specifically, the first air flow is perpendicular to the surface to be cleaned along the flow direction formed by the first jet orifice, and the second air flow is inclined up and down along the flow formed by the second jet orifice.
Further, the first ejection opening and the second ejection opening extend along the width direction of the cleaning bath, respectively, and in the orthographic projection on the surface to be cleaned, both ends of the first ejection opening and the second ejection opening emerge from the surface to be cleaned or the sealing ring or the wafer carrier, respectively. In this case, it is ensured that the gas flow covers the entire wafer surface and that there is no uneven coverage and no variation in the height of the gas plane formed.
Preferably, in an orthographic projection on the cleaning liquid surface, the second injection opening is located between the overflow opening and the surface to be cleaned. Here, the formation of a liquid film of the air flow on the cleaning liquid surface is ensured.
According to a further embodiment and preferred aspect of the invention, the front and back sides of the wafer carrier are each loaded with a wafer, and the overflow launder and the spray module form a drying group having two surfaces to be cleaned for simultaneously drying the two wafers. Here, the cleaning and drying efficiency is advantageously improved.
In addition, the cleaning device also comprises a power mechanism for driving the two drying groups to synchronously lift.
Due to the implementation of the technical scheme, compared with the prior art, the invention has the following advantages:
In the existing wafer cleaning drying process, if high-purity nitrogen is adopted for drying, the exposed wafer part is dried by adopting high-purity nitrogen to blow and dry the wafer part, and on the surface, although the high-purity nitrogen is simple and efficient, when the gas acts on the surface of the wafer and has large water drop positions, the water drops are splashed, so that the water drops are reintroduced at the blow-dried positions, water marks are formed after the blow-dried positions are blow-dried, the water marks are very difficult to clean, if the chemical liquid cleaning is not carried out deeply, the wafer is scrapped, if the marangoni principle-based drying mode is mainly adopted, when the two liquids with different surface tension are mainly used for contact, the surface liquid film (also called IPA liquid film or isopropanol liquid film) keeps flowing from the area with low surface tension to the area with high surface tension, meanwhile, in the cleaning liquid discharging process, the water is kept to flow to the middle part to be converged along with the descending of the liquid level, and the residual water drops on the surface are carried away along with the liquid film with the contact of the wafer, the liquid film in the actual operation, the water marks are not easy to dry, but the cleaning liquid film is formed along with the large fluctuation amplitude of the liquid level due to the liquid level fluctuation of the liquid level is greatly, the liquid level is formed along the liquid level fluctuation, the liquid level is greatly, and the cleaning amplitude is not easy to face the surface fluctuation is increased. The application skillfully solves the defects and the shortcomings of the prior art by integrally designing the structure of the wafer surface cleaning device, after adopting the cleaning device, the wafer carrier loaded with the wafer is inserted into a cleaning tank from top to bottom so as to enable the surface to be cleaned formed by the wafer to be soaked in cleaning liquid for cleaning, then the overflow mechanism and the surface to be cleaned processing mechanism are driven to synchronously move from top to bottom, wherein the overflow passage formed by the overflow mechanism enables the cleaning liquid to be synchronously discharged from the overflow passage along with the descending movement of the overflow mechanism so as to accurately control the descending speed of the cleaning liquid level, and simultaneously the surface to be cleaned processing mechanism forms a first air flow which is blown to the surface to be cleaned exposed to the cleaning liquid level so as to form dryness, The second air flow which is blown to the junction between the cleaning liquid level and the surface to be cleaned to form a liquid film which gradually covers the cleaning liquid level is simultaneously blown and cooperated by the first air flow and the second air flow, so that the cleaning liquid level near the junction is vertical to the surface to be cleaned (the probability that the cleaning liquid climbs along the surface of the wafer and remains in a large range is reduced), and a small amount of the cleaning liquid remaining in the surface to be cleaned is gradually dried from top to bottom. Compared with the prior art, the application has the advantages that on one hand, the gravity of water is used as a drive to control the water surface to descend, the overflow mode is adopted to match with the obstruction formed by the liquid film on the surface to realize the accurate control of the descending speed of the cleaning liquid surface so as to ensure that the cleaning liquid surface is stable, on the other hand, the overflow mechanism and the surface treatment mechanism to be cleaned synchronously move downwards to realize the constant jet height of air flow relative to the cleaning liquid surface to overflow and discharge the cleaning liquid, and then the cleaning liquid at the junction is kept perpendicular to the surface to be cleaned of the wafer by the sweeping and the cooperation of the first air flow and the second air flow so as to form the liquid film which is not influenced by the fluctuation of the liquid level, thereby effectively inhibiting the climbing trend of the cleaning liquid along the surface of the wafer, reducing the probability that the cleaning liquid is remained on the surface of the wafer in a large scale and gradually realizing the traceless drying of the surface of the wafer from top to bottom.
Drawings
FIG. 1 is a schematic perspective view of a wafer surface cleaning apparatus according to the present invention;
FIG. 2 is a schematic view of a part of the structure of FIG. 1;
FIG. 3 is a schematic top view of a wafer surface cleaning apparatus;
FIG. 4 is a schematic cross-sectional view of A-A of FIG. 3;
FIG. 5 is an enlarged schematic view of the overflow mechanism and the surface treating mechanism to be cleaned of FIG. 2;
FIG. 6 is an enlarged schematic view of a part of the structure of FIG. 5;
FIG. 7 is an enlarged schematic view of the structure shown at B in FIG. 4;
wherein 1, a cleaning tank;
2. the overflow mechanism comprises an overflow groove, a 201, a first side groove plate, a b, a bending part, a c, comb teeth, a s0, an overflow notch, a k0, an overflow port, a 202, a second side groove plate, a 203, a groove end plate, a 204, a groove bottom plate, a 21, a liquid collecting groove, a 22, an overflow pipeline and a 220, wherein the pipelines are split;
3. The device comprises a surface to be cleaned processing mechanism, 30 parts of an injection module, 300 parts of a main cavity, k1 parts of a first diversion hole, k2 parts of a second diversion hole, 301 parts of a first diversion cavity, k3 parts of a first injection port, 302 parts of a second diversion cavity, k4 parts of a second injection port, 31 parts of an airflow supply part and m parts of a connecting module;
4. A power mechanism;
J. wafer carrier, Y, wafer.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed, mechanically connected, electrically connected, directly connected, indirectly connected through an intervening medium, or in communication between two elements or in an interaction relationship between two elements, unless otherwise explicitly specified. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
As shown in fig. 1 to 7, the wafer surface cleaning apparatus of the present embodiment includes a cleaning tank 1, an overflow mechanism 2, and a surface to be cleaned processing mechanism 3, and a front surface and a back surface of a wafer carrier J are respectively loaded with a wafer Y.
Specifically, the cleaning tank 1 is opened from the top and forms an inlet and an outlet, the wafer carrier J is inserted into the cleaning tank 1 along the up-down direction, and the surface to be cleaned formed by the wafer Y is immersed in the cleaning liquid. In some embodiments, the cleaning tank 1 may be a wafer cleaning tank with any conventional structure, and the cleaning solution used in the present application is water with a temperature of 30 ℃ to 50 ℃, and in this embodiment, the temperature of the cleaning solution is preferably 40 ℃.
In this example, the overflow mechanism 2 and the surface to be cleaned processing mechanism 3 are sequentially distributed from bottom to top and synchronously move, wherein the overflow mechanism 2 comprises an overflow groove 20 forming an overflow port k0, a liquid collecting groove 21 arranged below the overflow groove 20, and an overflow pipeline 22 which is communicated with the overflow groove 20 and the liquid collecting groove 21 and can synchronously stretch along with the up-and-down movement of the overflow groove 20, wherein an overflow passage is formed among the overflow groove 20, the overflow pipeline 22 and the liquid collecting groove 21, the surface to be cleaned processing mechanism 3 comprises an injection module 30 and an air flow supply part 31 which are fixedly connected to the top of the overflow groove 20, the overflow groove 20 and the injection module 30 form a drying group, two drying groups are correspondingly arranged on one side of the surface to be cleaned of each wafer Y, a processing cavity is defined between the two drying groups, a wafer carrier is inserted into the processing cavity from top to bottom, and the two drying groups synchronously dry the surfaces to be cleaned of two wafers.
Taking a drying group on one side as an example, when drying is performed on the surface to be cleaned of a single wafer, a plurality of air flows which are formed by gasifying liquid and are volatile are formed in the surface to be cleaned processing mechanism 3, wherein the plurality of air flows comprise a first air flow which is blown to the surface to be cleaned and exposed to the cleaning liquid surface to form drying, a second air flow which is blown to the junction of the cleaning liquid surface and the surface to be cleaned to form a liquid film which gradually covers the cleaning liquid surface, the surface to be cleaned is taken as a reference, cleaning liquid is discharged from an overflow passage along with the descending motion of the overflow mechanism 2, and the first air flow and the second air flow are simultaneously blown and cooperate to enable the cleaning liquid surface close to the junction to be vertical to the surface to be cleaned and gradually dry the surface to be cleaned from top to bottom. That is, the application controls the descending speed of the cleaning liquid level based on the descending of the overflow mechanism to form stable liquid level, reduces or eliminates the surface tension of the cleaning liquid by the sweeping and the cooperation of the first air flow and the second air flow, inhibits the climbing trend of the cleaning liquid along the surface of the wafer in the descending of the liquid level, keeps the cleaning liquid level at the junction vertical to the surface to be cleaned of the wafer, reduces the probability that the cleaning liquid remains on the surface of the wafer in a large range, and simultaneously gradually increases the area of the exposed part along with the descending of the cleaning liquid level, and the second air flow covers the whole exposed part to form dryness under the continuous assistance of the liquid film, and volatilizes the gas on the surface of the wafer to take away the residual water drops on the surface to realize traceless drying.
In this example, the overflow launder 20 includes a first side trough plate 201 and a second side trough plate 202 arranged at intervals from inside to outside in the thickness direction of the wash tank 1, a trough end plate 203 connected between opposite sides of the first side trough plate 201 and the second side trough plate 202, and a trough bottom plate 204 connected between bottoms of the first side trough plate 201 and the second side trough plate 202.
In some embodiments, the first side trough 201 is bent from the top to a direction away from the surface to be cleaned to form a bent portion b, and a plurality of comb teeth c are distributed at an end portion of the bent portion b away from the surface to be cleaned and distributed at intervals along the width direction of the cleaning tank 1, wherein an overflow gap s0 is formed between every two adjacent comb teeth c, and the plurality of overflow gaps s0 are distributed at intervals along the width direction of the cleaning tank 1 and form an overflow port k0, and the cleaning liquid is split through the plurality of overflow gaps s0 and enters the overflow tank 20. The overflow notch is used for shunting and buffering, so that the overflow discharging smoothness of the cleaning liquid is effectively improved, fluctuation generated by liquid discharge is further reduced, and the stability of the marangoni effect is ensured; meanwhile, the overflow notch is far away from the surface to be cleaned, so that fluctuation of the cleaning liquid level near the surface to be cleaned caused by liquid drainage is further reduced.
Meanwhile, the tank bottom plate 204 extends obliquely up and down in the width direction of the cleaning tank 1, the overflow pipeline 22 is connected to the lower part of the tank bottom plate 204 from the upper end part and the lower end part of the overflow pipeline 22 is connected to the liquid collecting tank 21, the overflow pipeline 22 comprises a plurality of pipeline split bodies 220 which are sequentially sleeved from top to bottom, the caliber of each pipeline split body 220 is gradually increased from top to bottom, and the cleaning tank 1 of the embodiment can be provided with a plurality of cleaning tanks and is arranged above the liquid collecting tank 21 side by side so as to realize that a single liquid collecting tank 21 synchronously receives cleaning liquid overflowed from a plurality of cleaning tanks 1 in the process of cleaning and drying wafers in batch.
In this example, the air flow adopts isopropyl alcohol, the first air flow is sprayed onto the surface to be cleaned and replaces the residual cleaning liquid, and the second air flow is sprayed onto the junction of the cleaning liquid level and the surface to be cleaned and gradually forms an isopropyl alcohol liquid film covering the cleaning liquid level along the overflow direction. The method utilizes the volatile property of isopropyl alcohol (IPA) to replace the residual cleaning liquid on the surface of the wafer so as to improve the drying effect, and simultaneously, based on the formed isopropyl alcohol liquid film covering the cleaning liquid surface, the method weakens the surface tension of the cleaning liquid, thereby being beneficial to stably forming the Marangoni effect.
In some embodiments, the jetting module 30 has a main cavity 300 communicating with the air flow supply part 31, and a first sub-cavity 301 and a second sub-cavity 302 disposed on one side of the main cavity 300 and respectively communicating with the main cavity 300, and the air flow is branched into the first sub-cavity 301 and the second sub-cavity 302 after entering the main cavity 300 to form a first air flow and a second air flow. Here, based on same cavity implementation reposition of redundant personnel in order to form first, two air currents, not only be favorable to simplifying the structure, realize compact structure, be convenient for control air current stable output simultaneously.
Meanwhile, the volume of the first sub-chamber 301 is larger than the volume of the second sub-chamber 302 (the first sub-chamber 301 is level with the second sub-chamber 302, and the height of the first sub-chamber 301 is larger than that of the second sub-chamber 302), and the flow rate of the first air flow ejected from the first sub-chamber 301 is smaller than that of the second air flow ejected from the second sub-chamber 302. Here, by controlling the volume difference of the first and second chambers, the flow rates of the first and second air streams are controlled, so that the multiple air streams blown to the surface of the wafer are precisely controlled (damage to the surface of the wafer due to excessive isopropyl alcohol air stream is avoided), and a uniform IPA liquid film is ensured to be formed on the cleaning liquid surface.
For further convenience of implementation, the main cavity 300 is formed with a first diversion hole k1 and a second diversion hole k2 respectively communicated with the first diversion cavity 301 and the second diversion cavity 302, the first diversion cavity 301 and the second diversion cavity 302 correspondingly form a first injection port k3 and a second injection port k4 from one side, wherein the first diversion hole k1 and the first injection port k3 are distributed in a vertically staggered mode, and the second diversion hole k2 and the second injection port k4 are distributed in a vertically staggered mode. The first air flow and the second air flow after being split form stable jet air pressure in the corresponding split cavities, so that stable output of the first air flow and the second air flow is ensured.
Specifically, the first air flow is vertical to the surface to be cleaned along the flow direction formed by the first injection port k3, the second air flow is inclined up and down along the flow formed by the second injection port k4, the first injection port k3 and the second injection port k4 respectively extend along the width direction of the cleaning tank 1, and in the orthographic projection on the surface to be cleaned, the two ends of the first injection port k3 and the second injection port k4 respectively emit the surface to be cleaned or the sealing ring or the wafer carrier. In this case, it is ensured that the plurality of gas flows can cover the entire wafer surface without uneven coverage and uneven height of the gas plane formed.
Meanwhile, in the orthographic projection on the cleaning liquid surface, the second ejection port k4 is located between the overflow port k0 and the surface to be cleaned. Here, the formation of a liquid film of the air flow on the cleaning liquid surface is ensured.
In this example, the air flow supply part 31 employs any conventional isopropyl alcohol supply device, and is connected to both ends of each of the spray modules 30 through the connection module m and communicates with the main cavity 300.
In addition, the cleaning device of the embodiment further comprises a power mechanism 4 for driving the two drying groups to synchronously lift, wherein the power mechanism 4 comprises telescopic power rods which are arranged on two opposite sides of the cleaning tank 1 and are correspondingly connected with two ends of the spraying module 30, and the overflow tank 20 and the spraying module 30 are driven to synchronously move up and down through the telescopic movement of the telescopic power rods.
In summary, after the cleaning device is adopted, the wafer carrier loaded with the wafer is inserted into the cleaning tank from top to bottom, so that the surface to be cleaned formed by the wafer is soaked in the cleaning liquid to be cleaned, then the overflow mechanism and the surface to be cleaned processing mechanism are driven to synchronously move from top to bottom, wherein the overflow path is formed by the overflow mechanism, so that the cleaning liquid can be synchronously discharged from the overflow path along with the descending movement of the overflow mechanism to accurately control the descending speed of the cleaning liquid level, simultaneously the surface to be cleaned processing mechanism forms a first air flow which is blown to the surface to be cleaned exposed to the cleaning liquid level to form a dry air flow, a second air flow which is blown to the junction of the cleaning liquid level and the surface to be cleaned to form a liquid film which gradually covers the cleaning liquid level, and the cleaning liquid level close to the junction is kept vertical to the surface to be cleaned (the probability of the cleaning liquid climbing along the surface of the wafer is reduced) and a small amount of the residual cleaning liquid in the surface to be cleaned is gradually dried from top to bottom. Compared with the prior art, the application has the advantages that the conventional gravity of water is used as a drive to control the water surface to descend, the overflow mode is adopted to cooperate with the obstruction formed by the surface liquid film to realize the precise control on the descending speed of the cleaning liquid surface so as to ensure the stable cleaning liquid surface, the overflow mechanism and the surface treatment mechanism to be cleaned synchronously move downwards to realize the constant jet height of air flow relative to the cleaning liquid surface to overflow and discharge the cleaning liquid, the cleaning liquid surface at the junction is kept to be perpendicular to the surface to be cleaned of the wafer by the sweeping and the cooperation of the first air flow and the second air flow so as to form a liquid film which is not influenced by the fluctuation of the liquid level, the tendency of the cleaning liquid climbing along the surface of the wafer is effectively restrained, the probability of the cleaning liquid remaining on a large scale on the surface of the wafer is reduced, the wafer surface is gradually realized from top to bottom, the third aspect is realized by shunting and forming a buffer, the smooth fluctuation generated by the overflow of the cleaning liquid is further reduced, the stability of the marangoni effect is ensured, the fourth aspect is realized by utilizing the easy-to replace the volatility of the cleaning liquid (IPA) to lift the surface, the drying liquid is simultaneously, the air flow is controlled based on the first air flow is reduced, the stable and the air flow is realized, the stable and the volume is realized, the stable and the stable flow is realized by the control of the first air flow is based on the first and the stable flow structure is realized, the stable and the second flow structure is based on the stable and the control of the air flow structure is realized, and the stable and the second flow is easy to realize the stable and the performance and the stable clean performance is based on the surface and the surface is realized and stable clean. Thus, the flow rate of the air flow blown to the surface of the wafer is precisely controlled (damage to the surface of the wafer caused by excessive isopropanol air flow is avoided) and the uniform IPA liquid film is ensured to be formed on the cleaning liquid surface, and in the sixth aspect, the design of the jet orifice of the application ensures that a plurality of air flows can cover the whole surface of the wafer and the conditions of uneven coverage and different heights of the formed air planes are avoided.
The present invention has been described in detail with the purpose of enabling those skilled in the art to understand the contents of the present invention and to implement the same, but not to limit the scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be included in the scope of the present invention.
Claims (15)
1. A wafer surface cleaning device comprises a cleaning tank, wherein a wafer carrier is inserted into the cleaning tank along the up-down direction, a surface to be cleaned formed by a wafer is soaked in cleaning liquid, and the wafer surface cleaning device is characterized by further comprising an overflow mechanism and a surface to be cleaned processing mechanism which are sequentially distributed from bottom to top and synchronously move, wherein the overflow mechanism is provided with an overflow passage, the surface to be cleaned processing mechanism is provided with a plurality of volatile air flows which are formed by liquid gasification, the plurality of air flows comprise a first air flow which is blown to the surface to be cleaned and exposed to the cleaning liquid surface to form dryness, a second air flow which is blown to the junction of the cleaning liquid surface and the surface to be cleaned to form a liquid film which gradually covers the cleaning liquid surface, the cleaning liquid is discharged from the overflow passage along with the descending movement of the overflow mechanism, and the cleaning liquid surface close to the junction is kept vertical to the surface to be cleaned and is gradually dried from top to bottom.
2. The apparatus according to claim 1, wherein the overflow mechanism comprises an overflow tank provided on one side of the surface to be cleaned and forming an overflow port, a liquid collecting tank provided below the overflow tank, and an overflow pipe communicating with the overflow tank and capable of extending and retracting in synchronization with the up-and-down movement of the overflow tank, wherein the overflow channel is formed among the overflow tank, the overflow pipe, and the liquid collecting tank.
3. The wafer surface cleaning apparatus of claim 2, wherein the overflow port includes a plurality of overflow indentations spaced apart along a width of the cleaning tank, and the cleaning liquid is diverted through the plurality of overflow indentations and enters the overflow tank.
4. The wafer surface cleaning apparatus of claim 3 wherein the overflow tank includes first and second side tank plates arranged at intervals from inside to outside in a thickness direction of the cleaning tank, tank end plates connected between opposite sides of the first and second side tank plates, and a tank bottom plate connected between bottom portions of the first and second side tank plates, wherein the first side tank plate forms a plurality of comb teeth arranged at intervals in a width direction of the cleaning tank from a top portion, the overflow gap is formed between each adjacent two of the comb teeth, and the overflow pipe is connected between the tank bottom plate and the liquid collecting tank.
5. The apparatus according to claim 4, wherein the first side groove plate is bent from the top to a direction away from the surface to be cleaned and forms a bent portion, and the plurality of comb teeth are distributed at an end portion of the bent portion away from the surface to be cleaned.
6. The apparatus according to claim 4, wherein the tank bottom plate extends obliquely upward and downward in the width direction of the cleaning tank, the overflow pipe is connected to the lower portion of the tank bottom plate, and/or the overflow pipe includes a plurality of pipe split bodies that are sequentially sleeved from top to bottom, and the diameters of the pipe split bodies are increased stepwise from top to bottom.
7. The apparatus according to claim 1, wherein the plurality of streams of gas employ isopropyl alcohol, a first stream of gas is sprayed onto the surface to be cleaned and displaces residual cleaning liquid, and a second stream of gas is sprayed onto a junction between the cleaning liquid surface and the surface to be cleaned and gradually forms an isopropyl alcohol liquid film covering the cleaning liquid surface along the overflow direction.
8. The wafer surface cleaning apparatus according to claim 2, wherein the surface to be cleaned treatment mechanism comprises an injection module and an air flow supply part which are fixedly connected to the top of the overflow tank, wherein a main cavity communicated with the air flow supply part, and a first sub-cavity and a second sub-cavity which are arranged on one side of the main cavity and are respectively communicated with the main cavity are formed in the injection module, and the air flow enters the main cavity and then is split into the first sub-cavity and the second sub-cavity to form a first air flow and a second air flow.
9. The wafer surface cleaning apparatus of claim 8, wherein the volume of the first subchamber is greater than the volume of the second subchamber and the flow rate of the first gas stream from the first subchamber is less than the flow rate of the second gas stream from the second subchamber.
10. The wafer surface cleaning apparatus of claim 8, wherein the main cavity is formed with a first diversion hole and a second diversion hole respectively communicated with the first diversion cavity and the second diversion cavity, the first diversion cavity and the second diversion cavity are correspondingly formed with a first jet opening and a second jet opening from one side, the first diversion hole and the first jet opening are distributed in a vertically staggered manner, and the second diversion hole and the second jet opening are distributed in a vertically staggered manner.
11. The wafer surface cleaning apparatus of claim 10, wherein the first air flow is perpendicular to the surface to be cleaned along the first jet opening, and the second air flow is inclined upward and downward along the second jet opening.
12. The wafer surface cleaning apparatus of claim 10, wherein the first and second ejection openings extend in a width direction of the cleaning bath, respectively, and both ends of the first and second ejection openings emerge the surface to be cleaned or the seal ring or the wafer carrier, respectively, in orthographic projection on the surface to be cleaned.
13. The wafer surface cleaning apparatus of claim 10, wherein the second ejection port is located between the overflow port and the surface to be cleaned in an orthographic projection on the cleaning liquid surface.
14. The wafer surface cleaning apparatus of any one of claims 2-13, wherein the front and back sides of the wafer carrier are each loaded with a wafer, and wherein the overflow trough and the spray module form a drying group having two surfaces to be cleaned for simultaneously drying the two wafers.
15. The wafer surface cleaning apparatus of claim 14, further comprising a power mechanism for driving the two drying groups to move up and down synchronously.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202510954188.1A CN120453204A (en) | 2025-07-11 | 2025-07-11 | Wafer surface cleaning device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202510954188.1A CN120453204A (en) | 2025-07-11 | 2025-07-11 | Wafer surface cleaning device |
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| CN120453204A true CN120453204A (en) | 2025-08-08 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6328814B1 (en) * | 1999-03-26 | 2001-12-11 | Applied Materials, Inc. | Apparatus for cleaning and drying substrates |
| KR20040008059A (en) * | 2002-07-15 | 2004-01-28 | 한주테크놀로지 주식회사 | Method and apparatus for cleaning substrate |
| JP2007221072A (en) * | 2006-02-20 | 2007-08-30 | Tokyo Seimitsu Co Ltd | Apparatus and method of cleaning and drying wafer |
| CN111785663A (en) * | 2020-07-10 | 2020-10-16 | 华海清科股份有限公司 | Wafer post-processing system |
| CN115565916A (en) * | 2022-11-09 | 2023-01-03 | 华海清科股份有限公司 | Wafer cleaning and drying device and method applying Marangoni effect |
-
2025
- 2025-07-11 CN CN202510954188.1A patent/CN120453204A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6328814B1 (en) * | 1999-03-26 | 2001-12-11 | Applied Materials, Inc. | Apparatus for cleaning and drying substrates |
| KR20040008059A (en) * | 2002-07-15 | 2004-01-28 | 한주테크놀로지 주식회사 | Method and apparatus for cleaning substrate |
| JP2007221072A (en) * | 2006-02-20 | 2007-08-30 | Tokyo Seimitsu Co Ltd | Apparatus and method of cleaning and drying wafer |
| CN111785663A (en) * | 2020-07-10 | 2020-10-16 | 华海清科股份有限公司 | Wafer post-processing system |
| CN115565916A (en) * | 2022-11-09 | 2023-01-03 | 华海清科股份有限公司 | Wafer cleaning and drying device and method applying Marangoni effect |
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