CN120468725A - Leakage current detection circuit and detection equipment - Google Patents
Leakage current detection circuit and detection equipmentInfo
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- CN120468725A CN120468725A CN202510969569.7A CN202510969569A CN120468725A CN 120468725 A CN120468725 A CN 120468725A CN 202510969569 A CN202510969569 A CN 202510969569A CN 120468725 A CN120468725 A CN 120468725A
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Abstract
The application provides a leakage current detection circuit and detection equipment, and belongs to the technical field of semiconductor testing, wherein the leakage current detection circuit comprises a pulse output circuit, a power supply circuit, a detection circuit and a protection circuit, the output end of the pulse output circuit is used for being connected with a control end of a power semiconductor to be tested, a first voltage end of the power supply circuit is used for being connected with a first controlled end of the power semiconductor to be tested, a second voltage end of the power supply circuit is connected with the first end of the detection circuit, a second end of the detection circuit is used for being connected with a second controlled end of the power semiconductor to be tested, the first end of the protection circuit is connected with the first end of the detection circuit, and the second end of the protection circuit is connected with the second end of the detection circuit. In the embodiment of the application, the protection circuit provides a low-impedance path for a current peak generated by the high-speed switch of the power semiconductor to be tested, and can accurately and completely acquire dynamic change data of leakage current during a dynamic reverse bias stress test period.
Description
Technical Field
The present application relates to the field of semiconductor testing, and in particular, to a leakage current detection circuit and detection apparatus.
Background
The wide bandgap semiconductor power device (such as silicon carbide (SiC), gallium nitride (GaN) and the like) realizes higher energy efficiency and power density in high-temperature, high-frequency and high-voltage scenes, is the core of the third-generation semiconductor technology, is widely applied to key electric control components such as a main drive inverter, a vehicle-mounted charger and a direct current converter of a new energy automobile, and is beneficial to realizing the weight reduction and the high efficiency of the electric control components of the new energy automobile.
However, with the increase of the service time, the wide bandgap semiconductor power device may have reliability problems such as threshold voltage drift, leakage current increase, bipolar degradation, etc. Dynamic reverse bias stress test (DYNAMIC REVERSE bias, DRB) can simulate the degradation trend of the 20 year life cycle of a wide bandgap semiconductor power device in 1000 hours by applying a stress much higher than the actual operating condition. At present, in the dynamic reverse bias stress test of a wide bandgap semiconductor power device, dynamic change data of leakage current cannot be completely obtained during the dynamic reverse bias stress test.
Disclosure of Invention
The embodiment of the application provides a leakage current detection circuit and detection equipment, which are used for completely acquiring dynamic change data of leakage current during a dynamic reverse bias stress test.
In order to achieve the above purpose, the embodiment of the present application adopts the following technical scheme:
In a first aspect, a leakage current detection circuit is provided. The leakage current detection circuit comprises a pulse output circuit, a power supply circuit, a detection circuit and a protection circuit. The output end of the pulse output circuit is used for being connected with the control end of the power semiconductor to be tested. The first voltage end of the power supply circuit is used for being connected with the first controlled end of the power semiconductor to be tested, the second voltage end of the power supply circuit is connected with the first end of the detection circuit, and the second end of the detection circuit is used for being connected with the second controlled end of the power semiconductor to be tested. The first end of the protection circuit is connected with the first end of the detection circuit, and the second end of the protection circuit is connected with the second end of the detection circuit.
In the embodiment of the application, when the power semiconductor to be tested is turned off, the power semiconductor to be tested bears the reverse bias stress applied by the power supply circuit, and the pulse output circuit is matched to control the power semiconductor to be tested to be alternately turned on and off, so that the power semiconductor to be tested bears the dynamic reverse bias stress. The detection circuit can detect leakage current of the power semiconductor to be detected when the power semiconductor to be detected is disconnected, and the protection circuit provides a low impedance path for current spikes generated by the high-speed switch of the power semiconductor to be detected, so that the current spikes can be prevented from flowing through the detection circuit during the dynamic reverse bias stress test, further the influence of a current thermal effect on the detection precision of the detection circuit can be reduced, and the detection circuit can continuously detect the leakage current of the power semiconductor to be detected during the dynamic reverse bias stress test. That is, the embodiment of the application can accurately and completely acquire the dynamic change data of the leakage current during the dynamic reverse bias stress test.
In some possible embodiments, the power semiconductor to be tested comprises a first semiconductor device and a second semiconductor device, the first semiconductor device and/or the second semiconductor device is a device to be tested, the pulse output circuit comprises a first output end and a second output end, and the leakage current detection circuit further comprises a connection circuit. The first end of the pulse output circuit is used for being connected with the control end of the first semiconductor device, and the second end of the pulse output circuit is used for being connected with the control end of the second semiconductor device. The first voltage end of the power supply circuit is used for being connected with the first controlled end of the first semiconductor device, the second controlled end of the first semiconductor device is connected with the first controlled end of the second semiconductor device through the connecting circuit, and the second end of the detection circuit is used for being connected with the second controlled end of the second semiconductor device. The first semiconductor device and the second semiconductor device form a half-bridge structure, so that one dynamic reverse bias stress test can complete the leakage current test of the first semiconductor device and the second semiconductor device.
In some possible embodiments, the first output terminal of the pulse output circuit is configured to output a first pulse signal to control on/off of the first semiconductor device. The second output end of the pulse output circuit is used for outputting a second pulse signal and controlling the on-off of the second semiconductor device. Wherein the first pulse signal and the second pulse signal are 180 degrees out of phase. That is, when the first pulse signal controls the first semiconductor device to be turned on, the second pulse signal controls the second semiconductor device to be turned off, and when the first pulse signal controls the first semiconductor device to be turned off, the second pulse signal controls the second semiconductor device to be turned on. The first semiconductor device and the second semiconductor device are alternately subjected to reverse bias stress applied by the power supply circuit.
In some possible embodiments, the first pulse signal and the second pulse signal are each greater than 25kHz in frequency.
In some possible embodiments, the protection circuit is used for filtering out current peaks caused by the on-off process of the power semiconductor to be tested. Therefore, the influence of the current thermal effect on the detection precision of the detection circuit can be reduced, and the detection circuit can continuously detect the leakage current of the power semiconductor to be detected during the dynamic reverse bias stress test.
In some possible embodiments, the protection circuit comprises a diode, a cathode terminal of the diode being connected to a first terminal of the protection circuit, and an anode terminal of the diode being connected to a second terminal of the protection circuit. The voltage of the first voltage end of the power supply circuit is larger than the voltage of the second voltage end of the power supply circuit.
In some possible implementations, the detection circuit includes a sampling resistor and an amplifier. Wherein a first end of the sampling resistor is connected to a first end of the detection circuit and a second end of the sampling resistor is connected to a second end of the detection circuit. The first input end of the amplifier is connected with the first end of the sampling resistor, the second end of the amplifier is connected with the second end of the sampling resistor, and the output end of the amplifier is used for outputting amplified sampling voltage which indicates leakage current of the power semiconductor to be tested.
In some possible embodiments, the pulse output circuit further comprises a control circuit, wherein an output end of the control circuit is connected with an input end of the pulse output circuit, and an input end of the control circuit is connected with an output end of the amplifier. The control circuit is configured to control the pulse output circuit to output a pulse signal. And determining the leakage current of the first semiconductor device and/or the leakage current of the second semiconductor device according to the pulse signal output by the pulse output circuit and the amplified sampling voltage.
In a second aspect, a detection apparatus is provided. The detection device comprises a test machine and the leakage current detection circuit in the first aspect, wherein the leakage current detection circuit is arranged in the test machine.
In some possible embodiments, the power semiconductor temperature control device further comprises a temperature control device, wherein the temperature control device is arranged in the machine, and is used for controlling the working temperature of the power semiconductor to be tested and the temperature of the working environment where the power semiconductor to be tested is located.
It should be appreciated that the technical effects of the second aspect may refer to the technical effects of the first aspect and any embodiment thereof, and are not described herein.
Drawings
Fig. 1 is a schematic circuit diagram of a leakage current detection circuit in a dynamic reverse bias stress test of a power semiconductor according to an embodiment of the present application;
FIG. 2 is a schematic waveform diagram showing the leakage current over time during dynamic reverse bias stress testing according to an embodiment of the present application;
FIG. 3 is a schematic circuit diagram of a leakage current detection circuit for dynamic reverse bias stress test of another power semiconductor according to an embodiment of the present application;
Fig. 4 is a schematic circuit diagram of a first leakage current detection circuit according to an embodiment of the present application;
FIG. 5 is a schematic diagram showing waveforms of a first pulse signal, a second pulse signal and a leakage current of the leakage current detection circuit according to the embodiment of the present application during a dynamic reverse bias stress test;
Fig. 6 is a schematic circuit diagram of a second leakage current detection circuit according to an embodiment of the present application;
fig. 7 is a schematic circuit diagram of a third leakage current detection circuit according to an embodiment of the present application.
Reference numerals 110, a driving circuit, 120, a measuring circuit, 210, a pulse output circuit, 220, a power supply circuit, 230, a detection circuit, 231, an amplifier, 240, a protection circuit, 250, a connection circuit, 260 and a control circuit.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The terms "first," "second," and the like, in accordance with embodiments of the present application, are used solely for the purpose of distinguishing between similar features and not necessarily for the purpose of indicating a relative importance, number, sequence, or the like.
The terms "exemplary" or "such as" and the like, as used in relation to embodiments of the present application, are used to denote examples, illustrations, or descriptions. Any embodiment or design described herein as "exemplary" or "for example" should not be construed as preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "such as" is intended to present related concepts in a concrete fashion.
The terms "coupled" and "connected" in accordance with embodiments of the application are to be construed broadly, and may refer, for example, to a physical direct connection, or to an indirect connection via electronic devices, such as, for example, electrical resistance, inductance, capacitance, or other electrical devices.
Wide bandgap semiconductor power devices (e.g., silicon carbide (SiC), gallium nitride (GaN), etc.) achieve higher energy efficiency and power density in high temperature, high frequency, high voltage scenarios, and are the heart of third generation semiconductor technology. However, with the increase of the service time, the wide bandgap semiconductor power device may have reliability problems such as threshold voltage drift, leakage current increase, bipolar degradation, etc. The dynamic reverse bias stress test can simulate the degradation trend of the wide band gap semiconductor power device for 20 years in 1000 hours by applying the stress far higher than the actual working condition, thereby being capable of exposing the reliability problem of the wide band gap semiconductor power device in the use process in advance.
Fig. 1 provides a leakage current detection circuit for dynamic reverse bias stress test of a power semiconductor. As shown in fig. 1, includes a plurality of half-bridge structures connected in parallel with each other and a dc power supply. Each half-bridge structure comprises an upper-bridge semiconductor device to be tested D1, a lower-bridge semiconductor device to be tested D2 and a sampling resistor R1 which are sequentially connected in series. The upper bridge to-be-detected semiconductor device D1 of each half-bridge structure shares a first driving signal, the lower bridge to-be-detected semiconductor device D2 shares a second driving signal, the first driving signal and the second driving signal have the same frequency and opposite polarities, and dead time is arranged.
Fig. 2 is a waveform diagram showing the change of leakage current with time at the time of dynamic reverse bias stress test, wherein the abscissa is time and the ordinate is magnitude of leakage current. As shown in fig. 2, during the dynamic reverse bias stress test, the driving signal controls the high-speed switch of the semiconductor device to be tested, and during the high-speed switch, due to the parasitic capacitance of the device, an extremely high current spike will be generated on the semiconductor device to be tested, so that the leakage current measurement of the semiconductor device to be tested is inaccurate. Therefore, when the test is performed for the set leakage current detection time, the switching frequency of the semiconductor device to be tested is reduced so as to detect the leakage current of the semiconductor device to be tested. After the detection of the leakage current is completed, the driving signal continuously controls the high-speed switch of the semiconductor device to be detected. That is, static leakage current is detected after a certain time interval to reflect the aging condition of the semiconductor device to be tested.
However, when the semiconductor device to be tested is switched at a high speed, the sampling resistor R1 is heated due to the current spike, and the temperature characteristic of the resistor affects the resistance value, so that the measurement accuracy is reduced. To this end, fig. 3 provides another leakage current detection circuit for dynamic reverse bias stress testing of a power semiconductor. As shown in fig. 3, includes a driving circuit 110, a measuring circuit 120, and a switch SW. Two semiconductor devices to be tested are connected in series to form a half-bridge structure, one end of the half-bridge structure is used for being connected with a power supply VCC, the other end of the half-bridge structure is respectively connected with one end of a switch SW and one end of a measuring circuit 120, and the other end of the switch SW is grounded GND with the other end of the measuring circuit 120. The driving circuit 110 is used for outputting driving signals to alternately turn on two semiconductor devices to be tested.
In the stress applying stage, the circuit shown in fig. 3 simulates the degradation trend of two semiconductor devices to be tested under the actual operation condition through pulse signals. In the test stage, the circuit shown in fig. 3 alternately turns on two semiconductor devices to be tested in the half-bridge structure through the direct current signal, so that when the semiconductor device to be tested is turned on, the voltage at two ends of the resistor R2 can be measured, and the leakage current of the other semiconductor device to be tested can be obtained by dividing the voltage at two ends of the resistor R2 by the resistance value of the resistor R2. That is, static leakage current is detected after a certain time interval to reflect the aging condition of the semiconductor device to be tested.
In addition, in the stress applying stage, the switch SW in fig. 3 is turned on, and a current spike generated by the high-speed switch of the semiconductor device to be tested is conducted to the ground GND through the switch SW, so that the heat generation of the resistor R2 in the measurement circuit 120 is greatly reduced, and further, the leakage current test performed in the test stage can be more accurate.
However, as described above, in both the above two schemes, static leakage current is detected after a certain time interval to reflect the aging condition of the semiconductor device to be tested, and dynamic change data of the leakage current during the dynamic reverse bias stress test cannot be completely obtained.
The embodiment of the application provides a leakage current detection circuit. As shown in fig. 4, the leakage current detection circuit includes a pulse output circuit 210, a power supply circuit 220, a detection circuit 230, and a protection circuit 240. In some embodiments, the power semiconductor under test includes a first semiconductor device DUT1 and a second semiconductor device DUT2, the pulse output circuit 210 includes a first output terminal and a second output terminal, and the leakage current detection circuit further includes a connection circuit 250. In some examples, the connection circuit 250 may be a wire.
In some embodiments, the first semiconductor device and the second semiconductor device are both devices under test. In some embodiments, the first semiconductor device is a device under test and the second semiconductor device is a standard device for auxiliary testing. In some embodiments, the first semiconductor device is a standard device for auxiliary testing and the second semiconductor device is a device under test.
Fig. 5 shows a schematic waveform diagram of a first pulse signal, a second pulse signal and a leakage current changing with time during a dynamic reverse bias stress test, where the abscissa is time and the ordinate is the amplitude of the first pulse signal, the amplitude of the second pulse signal and the amplitude of the leakage current, respectively. As shown in fig. 4 and 5, a first end of the pulse output circuit 210 is used for being connected to a control end of the first semiconductor device DUT1, and a first output end of the pulse output circuit 210 is used for outputting a first pulse signal to control on-off of the first semiconductor device DUT 1. A second end of the pulse output circuit 210 is used for being connected with a control end of the second semiconductor device DUT2, and a second output end of the pulse output circuit 210 is used for outputting a second pulse signal to control on-off of the second semiconductor device DUT 2. The high level of the first pulse signal and the second pulse signal is 20V, the low level of the first pulse signal and the second pulse signal is-10V, the frequencies of the first pulse signal and the second pulse signal are both larger than 25kHz, the phase difference between the first pulse signal and the second pulse signal is 180 degrees, and the dead time is set to be 100ns.
That is, when the first terminal of the pulse output circuit 210 applies a gate voltage of 20V to the control terminal of the first semiconductor device DUT1 to control the first semiconductor device DUT1 to be turned on, the second terminal of the pulse output circuit 210 applies a gate voltage of-10V to the control terminal of the second semiconductor device DUT2 to control the second semiconductor device DUT2 to be turned off. When the second terminal of the pulse output circuit 210 applies a gate voltage of 20V to the control terminal of the second semiconductor device DUT2 to control the second semiconductor device DUT2 to turn on, the first terminal of the pulse output circuit 210 applies a gate voltage of-10V to the control terminal of the first semiconductor device DUT1 to control the first semiconductor device DUT1 to turn off.
The power supply circuit 220 can output a voltage of 0-10000 v to provide a reverse bias voltage stress required for dynamic reverse bias stress test. The first voltage terminal v+ of the power supply circuit 220 is used for connecting the first controlled terminal of the first semiconductor device DUT1, the second controlled terminal of the first semiconductor device DUT1 is connected to the first controlled terminal of the second semiconductor device DUT2 through the connection circuit 250, the second terminal of the detection circuit 230 is used for connecting the second controlled terminal of the second semiconductor device DUT2, and the second voltage terminal V-of the power supply circuit 220 is connected to the first terminal of the detection circuit 230.
With continued reference to fig. 4, in some embodiments, the detection circuit 230 includes a resistor R3 and an amplifier 231. The resistance of the resistor R3 is usually 1 to 100 Ω. The first terminal of the resistor R3 is connected to the first terminal of the detection circuit 230, and the second terminal of the resistor R3 is connected to the second terminal of the detection circuit 230. A first input terminal of the amplifier 231 is connected to a first terminal of the resistor R3, a second terminal of the amplifier 231 is connected to a second terminal of the resistor R3, and an output terminal of the amplifier 231 is configured to output an amplified sampling voltage, the amplified sampling voltage being indicative of a leakage current of the power semiconductor to be tested. That is, the leakage current is equal to the voltage across resistor R3 (i.e., the sampled voltage) divided by the resistance of resistor R3.
The first end of the protection circuit 240 is connected to the first end of the detection circuit 230, the second end of the protection circuit 240 is connected to the second end of the detection circuit 230, and the protection circuit 240 is configured to filter out a current spike caused by the on-off process of the power semiconductor to be tested. In some embodiments, the voltage of the first voltage terminal V+ of the power supply circuit 220 is greater than the voltage of the second voltage terminal V-of the power supply circuit 220. As shown in fig. 4, the protection circuit 240 includes a diode SBD1, a cathode terminal of the diode SBD1 is connected to a first terminal of the protection circuit 240, and an anode terminal of the diode SBD1 is connected to a second terminal of the protection circuit 240. The protection circuit 240 may further include more diodes, for example, a diode SBD2, and a diode SBD1 and a diode SBD2 are connected in parallel. In some examples, the diode SBD1 and the diode SBD2 are schottky diodes (Schottky barrier diode), which have strong current-passing capability and high reliability, and the schottky diodes are connected in parallel, so that the characteristic degradation or failure caused by transient current spikes can be avoided.
In other embodiments, the protection circuit 240 may include a device having diode characteristics, such as a SiC MOSFET or a GaN HEMT. The body diode (also called parasitic diode) of the SiC MOSFET or GaN HEMT is utilized to filter out the current peak caused by the on-off process of the power semiconductor to be tested.
In an embodiment of the present application, the protection circuit 240 provides a low impedance path for the current spike, thereby reducing or even preventing the current spike from flowing through the resistor R3 (shown in fig. 5) in the detection circuit 230, so as to continuously detect the leakage current of the power semiconductor under test during the dynamic reverse bias stress test. And greatly reduce the heating of resistor R3, and then also reduced the influence of resistor R3 heating to detection accuracy. Namely, the embodiment of the application can accurately and completely acquire the dynamic change data of the leakage current during the dynamic reverse bias stress test.
As shown in fig. 6, in some embodiments, the leakage current detection circuit further includes a control circuit 260. An output of the control circuit 260 is connected to an input of the pulse output circuit 210, and an input of the control circuit 260 is connected to an output of the amplifier 231. The control circuit 260 may control the pulse output circuit 210 to output a pulse signal and determine the leakage current of the first semiconductor device DUT1 and/or the leakage current of the second semiconductor device DUT2 according to the pulse signal output by the pulse output circuit 210 and the amplified sampling voltage output by the amplifier 231.
It should be understood that, in the leakage current detection circuit provided in the embodiment of the present application, the detection circuit 230 and the protection circuit 240 may be disposed in a plurality of groups in a one-to-one correspondence manner. As shown in fig. 7, a first terminal of the detection circuit 230 is connected to the second voltage terminal V-of the power supply circuit 220, and a second terminal of the detection circuit 230 is connected to the power semiconductor to be tested in a one-to-one correspondence. The first end of the protection circuit 240 is connected to the first end of the corresponding detection circuit 230, and the second end of the protection circuit 240 is connected to the second end of the corresponding detection circuit 230.
The embodiment of the application also provides a detection device. The detection device comprises a test machine and a leakage current detection circuit in fig. 4, 6 or 7, wherein the leakage current detection circuit is arranged in the test machine.
Further, the detecting device may further include a temperature control device, where the temperature control device is disposed in the machine, and the temperature control device is configured to control an operating temperature of the power semiconductor to be detected (for example, control a junction temperature of the power semiconductor to be detected to be 175 °) and control a temperature of an operating environment where the power semiconductor to be detected is located, so as to implement a high temperature dynamic reverse bias stress (HDRB) test.
The embodiment of the application provides a leakage current detection circuit and detection equipment. In the leakage current detection circuit, the power supply circuit 220 can bear the applied reverse bias stress to the power semiconductor to be detected when the power semiconductor to be detected is turned off, and control the power semiconductor to be detected to be alternately turned on or off in cooperation with the pulse output circuit 210, so that the power semiconductor to be detected bears the dynamic reverse bias stress. The detection circuit 230 can detect the leakage current of the power semiconductor to be tested when the power semiconductor to be tested is turned off, and the protection circuit 240 provides a low impedance path for the current spike generated by the high-speed switch of the power semiconductor to be tested, so that the current spike can be prevented from flowing through the detection circuit 230 during the dynamic reverse bias stress test, and further the influence of the current thermal effect on the detection precision of the detection circuit 230 can be reduced, so that the detection circuit 230 continuously detects the leakage current of the power semiconductor to be tested during the dynamic reverse bias stress test. That is, the embodiment of the application can accurately and completely acquire the dynamic change data of the leakage current during the dynamic reverse bias stress test.
In the embodiments of the present application, it should be understood that the disclosed leakage current detection circuit and detection apparatus may be implemented in other manners. For example, the above-described device embodiments are merely illustrative, e.g., the division of the modules is merely a logical function division, and there may be additional divisions when actually implemented, e.g., multiple modules or components may be combined or integrated into another device, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some interface, indirect coupling or communication connection of devices or modules, electrical, mechanical, or other form.
The modules described as separate components may or may not be physically separate, and components shown as modules may or may not be physically separate, i.e., may be located in one device, or may be distributed over multiple devices. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional module in the embodiments of the present application may be integrated in one device, or each module may exist alone physically, or two or more modules may be integrated in one device.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
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| CN202510969569.7A CN120468725A (en) | 2025-07-15 | 2025-07-15 | Leakage current detection circuit and detection equipment |
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| CN202510969569.7A CN120468725A (en) | 2025-07-15 | 2025-07-15 | Leakage current detection circuit and detection equipment |
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