CN120588103A - Wafer chemical mechanical polishing equipment - Google Patents
Wafer chemical mechanical polishing equipmentInfo
- Publication number
- CN120588103A CN120588103A CN202510923598.XA CN202510923598A CN120588103A CN 120588103 A CN120588103 A CN 120588103A CN 202510923598 A CN202510923598 A CN 202510923598A CN 120588103 A CN120588103 A CN 120588103A
- Authority
- CN
- China
- Prior art keywords
- polishing
- air curtain
- chemical mechanical
- injection
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides wafer chemical mechanical polishing equipment, which comprises a polishing table, a polishing pad, a spraying pipe, a polishing head and an air curtain device, wherein the polishing pad is arranged on the polishing table, the spraying pipe is used for spraying polishing liquid on the polishing pad, the polishing head is used for carrying a wafer to carry out chemical mechanical polishing on the polishing pad, the air curtain device is configured to spray air on one side of the polishing pad, which faces towards the polishing head, and the air spraying range of the air curtain device is arranged around one end of the polishing head, which faces towards the polishing pad. The wafer chemical mechanical polishing equipment is characterized in that the air curtain device is arranged on the periphery of the polishing head to generate an air curtain surrounding the polishing head, so that the polishing head can wrap the joint of the polishing head and the polishing pad when the polishing head is attached to the polishing pad to rotate, at the moment, centrifugal movement of polishing liquid between the polishing head and the polishing pad is blocked by the annular air curtain, the phenomenon that the polishing liquid is thrown out to run off due to centrifugal movement is reduced, the utilization rate of the polishing liquid is improved, and the pollution of the polishing liquid to the environment is reduced.
Description
Technical Field
The invention relates to the technical field of wafer polishing, in particular to wafer chemical mechanical polishing equipment.
Background
This section provides merely background information related to the present disclosure and is not necessarily prior art.
The removal of the polishing liquid caused by the rotation process in the wafer chemical mechanical polishing process causes about 70% of the loss of the polishing liquid, which causes not only economic and environmental problems but also influences on the wafer chemical mechanical polishing process.
Disclosure of Invention
The invention aims to at least solve the problem that the polishing solution of the existing wafer chemical mechanical polishing equipment is lost too quickly. The aim is achieved by the following technical scheme:
the invention provides wafer chemical mechanical polishing equipment, which comprises:
A polishing table;
a polishing pad disposed on the polishing table;
The spray pipe is used for spraying the polishing liquid on the polishing pad;
a polishing head for carrying a wafer for chemical mechanical polishing on the polishing pad;
And an air curtain device configured to spray air onto a side of the polishing pad facing the polishing head, the air curtain device having an air spray range disposed around an end of the polishing head facing the polishing pad.
According to the wafer chemical mechanical polishing equipment provided by the invention, the air curtain device is arranged on the periphery of the polishing head to generate the air curtain surrounding the polishing head, so that the air curtain can wrap the joint of the polishing head and the polishing pad when the polishing head is attached to the polishing pad for rotation, at the moment, the centrifugal movement of the polishing liquid between the polishing head and the polishing pad is blocked by the annular air curtain, the phenomenon that the polishing liquid is thrown out to run off due to the centrifugal movement is reduced, the utilization rate of the polishing liquid is improved, and the pollution of the polishing liquid to the environment is reduced.
In addition, the wafer chemical mechanical polishing apparatus according to the present invention may further have the following additional technical features:
in some embodiments of the invention, the air curtain device is provided to the polishing head.
In some embodiments of the present invention, the polishing head includes a rotating portion for carrying the wafer to rotate, a rotation axis of the rotating portion is perpendicular to the polishing pad, and the air curtain device is provided in the rotating portion.
In some embodiments of the present invention, the air curtain device includes an injection passage extending in a circumferential direction of the rotating portion and disposed around the rotation axis, the injection passage having a plurality of injection holes disposed at intervals in the circumferential direction of the rotating portion, the injection direction of the injection holes being directed toward the polishing pad and disposed at an angle to the rotation axis.
In some embodiments of the present invention, the air curtain device further includes an injection pipe provided at an outer circumferential side of the rotating portion and surrounding the rotation axis, the injection pipe having the injection passage formed inside thereof, the injection pipe being provided with the injection hole at a side of the rotating portion facing away from the rotating portion in a radial direction of the rotating portion.
In some embodiments of the present invention, the air curtain device further includes a first conveying pipe and a second conveying pipe, the first conveying pipe and the second conveying pipe are both disposed inside the rotating portion, and the first conveying pipe is disposed coaxially with the rotation axis and is communicated with the injection pipe through the second conveying pipe.
In some embodiments of the invention, the angle between the axial direction of the injection hole and the rotation axis is less than 50 °.
In some embodiments of the invention, the injection holes are configured to inject in a fan shape;
And/or the axis of the injection hole is spiral;
and/or the number of the injection holes is greater than 10.
In some embodiments of the present invention, the air curtain device further includes an air supply assembly provided outside the rotating part and in communication with the first delivery pipe, the air supply assembly being configured to supply compressed dry air into the first delivery pipe.
In some embodiments of the present invention, the wafer chemical mechanical polishing apparatus further comprises a vacuum device in communication with the injection passage and configured to evacuate the gas within the injection passage.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
Fig. 1 schematically illustrates a structural schematic view of a wafer chemical mechanical polishing apparatus according to an embodiment of the present invention;
Fig. 2 schematically shows a schematic configuration of an air curtain device and a rotating part according to an embodiment of the present invention;
The reference numerals are as follows:
100. Wafer chemical mechanical polishing equipment;
10. a polishing table;
20. a polishing pad;
30. A polishing head 31, a rotating part;
40. Air curtain device 41, spray pipe 411, spray hole 412, spray range 42, first conveying pipe 43 and second conveying pipe;
50. A shower pipe;
60. a gas supply assembly;
70. a vacuum device;
80. A wafer;
The X direction is the axial direction of the rotating part.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "includes," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order described or illustrated, unless an order of performance is explicitly stated. It should also be appreciated that additional or alternative steps may be used.
Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
For ease of description, spatially relative terms, such as "inner," "outer," "lower," "below," "upper," "above," and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the example term "below" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or in other directions) and the spatial relative relationship descriptors used herein interpreted accordingly.
Chemical mechanical polishing is a core technology used for removing redundant materials on the surface of a wafer in semiconductor manufacturing and realizing global planarization. The chemical mechanical polishing process efficiently removes uneven parts on the surface of the wafer through the synergistic effect of chemical corrosion and mechanical grinding, achieves nano-scale planarization and lays a foundation for the subsequent multilayer wiring process.
As shown in fig. 1 and 2, the present invention proposes a wafer chemical mechanical polishing apparatus 100, the wafer chemical mechanical polishing apparatus 100 comprising a polishing table 10, a polishing pad 20, a shower pipe 50, a polishing head 30, and a gas curtain device 40, the polishing pad 20 being disposed on the polishing table 10, the shower pipe 50 being for spraying a polishing liquid on the polishing pad 20, the polishing head 30 being for carrying a wafer 80 for chemical mechanical polishing on the polishing pad 20, the gas curtain device 40 being configured to spray a gas onto a side of the polishing pad 20 facing the polishing head 30, a gas spraying range 412 of the gas curtain device 40 being disposed around the polishing head 30 toward an end of the polishing pad 20.
Therefore, the wafer chemical mechanical polishing device 100 provided by the invention generates the air curtain surrounding the polishing head 30 on the peripheral side of the polishing head 30 by arranging the air curtain device 40, so that the air curtain can wrap the joint of the polishing head 30 and the polishing pad 20 when the polishing head 30 rotates in contact with the polishing pad 20, at this time, the centrifugal motion of the polishing liquid between the polishing head 30 and the polishing pad 20 is blocked by the annular air curtain, the phenomenon that the polishing liquid is thrown out to run off due to the centrifugal motion is reduced, the utilization rate of the polishing liquid is improved, and the pollution of the polishing liquid to the environment is reduced.
Illustratively, the polishing table 10 has a circular truncated cone shape, and a polishing pad 20 is disposed at the top end of the polishing table, and the polishing pad 20 is disposed at the top end. The polishing head 30 generally has a vacuum suction device for sucking the wafer 80, preventing the wafer 80 from being displaced during polishing, applying pressure downward to the polishing pad 20, and rotating the wafer 80 relative to the polishing pad 20 by rotation to physically polish the wafer 80. Meanwhile, a polishing solution spraying device is further arranged above the polishing pad 20, the polishing solution is sprayed onto the polishing pad 20 and then contacts with the wafer 80 to realize chemical polishing, and the polishing solution is a water-soluble polishing agent and consists of solid particle grinding agents, surfactants, stabilizers, oxidizing agents and the like. A series of chemical reactions are generated with the surface of the material to form a surface film, and then the surface film is removed by the abrasive particles in the components, so that the purpose of chemical polishing of the wafer is achieved. As the polishing head 30 or the polishing pad 20 rotates, the polishing liquid located between the polishing head 30 and the polishing pad 20 generates centrifugal motion, and the polishing liquid moves to the outer peripheral side by the centrifugal force, resulting in a loss of the polishing liquid. The air curtain device 40 may be an annular pipe disposed at the outer peripheral side of the polishing head 30, on which a plurality of injection holes 411 are disposed, the injection holes 411 are arranged along the circumferential direction of the polishing head 30, the annular pipe is filled with a pressure cleaning gas or a pressure inert gas by a gas supply device, the pressure gas is injected from the injection holes 411, the injection ranges 412 of the injection holes 411 are sequentially connected to form an annular air curtain, and the annular air curtain wraps the space between the polishing head 30 and the polishing pad 20, so that the centrifugal movement of the polishing liquid between the polishing head 30 and the polishing pad 20 is blocked by the air curtain, and the centrifugal movement is prevented from running off, thereby saving the usage amount of the polishing liquid.
It is understood that the gas curtain device 40 may be disposed on the outer peripheral side of the polishing head 30 in a ring shape, or may be disposed inside the polishing head 30 in a ring shape. The air curtain device 40 may also be disposed on the outer periphery of the polishing pad 20, and the air curtain device 40 generates an air curtain around the polishing pad 20, so that the centrifugal motion of the polishing liquid on the polishing pad 20 is blocked by the air curtain around the polishing pad 20, and the polishing liquid is not lost out of the polishing pad 20, and the consumption of the polishing liquid can be saved.
In some embodiments of the present invention, an air curtain device 40 is provided to the polishing head 30.
Therefore, by arranging the air curtain device 40 on the polishing head 30, the air curtain generated by the air curtain device 40 can be abutted against the polishing head 30 and arranged around the polishing head 30, which is helpful for blocking the centrifugal movement of the polishing liquid in time and reducing the loss of the polishing liquid.
It is to be understood that the air curtain device 40 may be disposed on the outer peripheral side of the polishing head 30, that is, the outer peripheral side of the polishing head 30 is provided with a spray pipe 41 path, a plurality of spray holes 411 are disposed on the spray pipe 41 path along the circumferential direction of the polishing head 30, and the spray ranges 412 of the spray holes 411 are sequentially connected, so that the pressure air sprayed from the spray holes 411 can be connected into an annular air curtain. An annular channel can be further arranged in the polishing head 30, a plurality of injection holes 411 are formed in the annular channel on the outer periphery side of the polishing head 30, and injection ranges 412 of the injection holes 411 are sequentially connected, so that pressure gas injected by the injection holes 411 can be connected into an annular air curtain to block centrifugal movement of polishing liquid.
In some embodiments of the present invention, the polishing head 30 includes a rotating portion 31, the rotating portion 31 is configured to rotate with the wafer 80, the rotating axis of the rotating portion 31 is perpendicular to the polishing pad 20, and the air curtain device 40 is disposed on the rotating portion 31.
It can be seen that the wafer 80 is carried by the rotating portion 31 to rotate, and pressure is applied to the polishing pad 20 vertically to perform physical polishing on the wafer 80, and meanwhile, the air curtain device 40 is disposed on the rotating portion 31, so that the air curtain device 40 can rotate relative to the polishing pad 20 along with the rotating portion 31, and further, the air curtain ejected by the air curtain device 40 can rotate relative to the polishing pad 20, so as to achieve a better blocking effect on the polishing liquid in centrifugal motion.
Illustratively, the rotating portion 31 may be a disc-type structure, the rotating portion 31 may carry the wafer 80 by vacuum adsorption, the rotating portion 31 may be connected to a motor by a transmission mechanism, the motor operates to drive the rotating portion 31 to rotate, the air curtain device 40 may be disposed at an outer periphery of the rotating portion 31, for example, an annular pipeline surrounding the rotating portion 31 is disposed at the outer periphery of the rotating portion 31, the pipeline is uniformly provided with injection holes 411 along a circumferential direction, the injection holes 411 are disposed towards the polishing pad 20, and the injection ranges 412 of the injection holes 411 are connected to generate an annular air curtain by injection, the rotating portion 31 rotates to drive the pipeline to rotate, and then the annular air curtain is driven to rotate, so as to improve resistance to the centrifuged polishing liquid. An annular channel can be further arranged inside the rotating part 31, a plurality of injection holes 411 are formed in the annular channel on the outer periphery side of the rotating part 31, and the injection ranges 412 of the injection holes 411 are sequentially connected, so that pressure gas injected by the injection holes 411 can be connected into an annular air curtain to block centrifugal movement of polishing liquid.
In some embodiments of the present invention, the air curtain device 40 includes an injection passage extending in the circumferential direction of the rotating portion 31 and disposed around the rotation axis, the injection passage having a plurality of injection holes 411 disposed at intervals in the circumferential direction of the rotating portion 31, the injection direction of the injection holes 411 being directed toward the polishing pad 20 and disposed at an angle to the rotation axis.
It can be seen that, by providing the annular injection passage extending along the circumferential direction of the rotating portion 31, the injection passage is provided with the plurality of injection holes 411 disposed at intervals along the circumferential direction of the rotating portion 31, the injection direction of the injection holes 411 faces the polishing pad 20 and is disposed at an included angle with the rotation axis, and the injection ranges 412 of the injection holes 411 are sequentially connected, so that the pressurized gas injected from the injection holes 411 can be connected into an annular air curtain to block the centrifugal movement of the polishing liquid.
The injection passage may be implemented by an annular pipe provided on the outer peripheral side of the rotating portion 31, or by an annular passage provided inside the rotating portion 31, for example. The spraying channels can be provided with a plurality of spraying holes 411 at equal intervals, and the spraying holes 411 are densely distributed, so that the spraying range 412 of the spraying holes 411 can not generate spraying dead angles, and the polishing solution is prevented from flowing out from the gap of the spraying range 412.
In some embodiments of the present invention, the air curtain device 40 further includes an injection pipe 41, the injection pipe 41 is disposed at an outer circumferential side of the rotating portion 31 and around the rotation axis, an injection passage is formed inside the injection pipe 41, and an injection hole 411 is provided at a side of the injection pipe 41 facing away from the rotating portion 31 in a radial direction of the rotating portion 31.
It can be seen that an annular injection tube 41 can be disposed on the outer peripheral side of the rotating portion 31, the injection tube 41 is disposed around the rotation axis of the rotating portion 31, and the injection tube 41 can be connected with the gas supply assembly 60 through a pipeline, so that the pressurized gas is injected through the injection hole 411 on the annular injection tube 41 to form an annular air curtain, and the injection tube 41 and the rotating portion 31 are disposed separately, thereby facilitating installation and maintenance.
The injection pipe 41 may be an annular pipe with a circular or rectangular cross section, and may be fastened or bolted to the outer peripheral side of the rotating portion 31, wherein an injection channel is formed inside the injection pipe 41, the injection pipe 41 is provided with an injection hole 411 along the axial direction of the rotating portion 31 toward one side of the polishing pad 20, and the injection hole 411 is located on the outer peripheral side of the injection pipe 41, that is, one side of the injection pipe 41 away from the rotating portion 31 along the radial direction of the rotating portion 31, so that the injection direction of the injection hole 411 can face the polishing pad 20, and is arranged at an angle to the polishing pad 20, and the fan-shaped injection angle of the injection hole 411 is matched, so that the width of the air curtain in the radial direction of the rotating portion 31 is gradually increased from top to bottom, so that a larger width is formed between the rotating portion 31 and the polishing pad 20, thereby generating a larger resistance to the polishing liquid acted upon by centrifugal force.
In some embodiments of the present invention, the air curtain device 40 further includes a first duct 42 and a second duct 43, each of the first duct 42 and the second duct 43 being provided inside the rotating portion 31, the first duct 42 being disposed coaxially with the rotation axis and communicating with the ejector duct 41 through the second duct 43.
It can be seen that by providing the first and second delivery pipes 42 and 43 inside the rotating portion 31, the external pressure gas can be circulated to the injection pipe 41 through the first and second delivery pipes 42 and 43, thereby being injected from the injection holes 411 to form an air curtain, the first delivery pipe 42 being coaxially disposed with the rotation axis of the rotating portion 31, so that the rotating portion 31 has less torsion influence on the first delivery pipe 42 when rotating, and the durability of the first delivery pipe 42 is improved.
Illustratively, the rotating portion 31 may be sleeved on the rotating shaft, and the motor drives the rotating shaft to rotate so as to drive the rotating portion 31 to rotate, and the first conveying pipe 42 may be disposed in the rotating shaft, coaxially disposed with the rotating shaft, and in clearance fit with the rotating shaft so as not to rotate along with the rotating shaft. The second delivery pipe 43 may extend in the radial direction of the rotating portion 31, one end of the second delivery pipe 43 may communicate with one end of the first delivery pipe 42 facing the polishing pad 20, may be connected by a joint or integrally connected, and the other end of the second delivery pipe 43 may be connected to the inner peripheral side of the annular injection pipe 41, may be connected by a joint, or may be directly integrally formed with the injection pipe 41.
In some embodiments of the present invention, the angle (shown as α in fig. 2) between the axial direction of the injection hole 411 and the rotation axis is less than 50 °.
It can be seen that by setting the axial direction of the injection hole 411 at an angle smaller than 50 ° to the rotation axis, the injection angle of the injection hole 411 is inclined with respect to the rotation axis so as not to be excessively outward. And thus the gas injected from the injection holes 411 can be directed toward the polishing pad 20 without being blocked by the rotating portion 31 itself, to improve the generation quality of the gas curtain.
Illustratively, the injection pipe 41 may be provided with injection holes 411 inclined with respect to the rotation axis, and the injection coverage area of the injection holes 411 may be provided with a fan-shaped cross section along the axial direction of the rotation portion 31, so that the injection range 412 of the injection holes 411 is larger, more conveniently, the injection coverage areas of the adjacent injection holes 411 are connected, an annular gapless air curtain is formed, and in addition, the injection coverage area of the injection holes 411 may be provided with a cone shape.
In some embodiments of the present invention, the injection holes 411 are configured to inject in a fan shape;
and/or, the axis of the injection hole 411 is spiral;
And/or the number of the injection holes 411 is greater than 10.
It can be seen that by setting the axis of the injection hole 411 to be spiral, the pressurized gas from the injection pipe 41 can be spirally moved along the spiral axis in the injection hole 411, thereby improving the injection speed, so that the blocking effect of the gas curtain against the centrifugal polishing liquid is better. And, the quantity that sets up jet hole 411 is greater than ten for the distribution of jet hole 411 on injection pipe 41 is denser, thereby makes the injection region of jet hole 411 connect gradually and forms annular air curtain, reduces the production at injection dead angle, thereby promotes the effect that blocks of air curtain to the polishing solution. In addition, the spraying region where the spraying holes 411 are provided is in a fan shape such that the width of the air curtain in the axial direction of the rotating portion 31 is gradually increased, and the width at the junction of the rotating portion 31 and the polishing pad 20 is large, thereby enhancing the blocking of the centrifugal polishing liquid.
In some embodiments of the present invention, the air curtain apparatus 40 further includes an air supply assembly 60, the air supply assembly 60 being disposed outside the rotating portion 31 and being in communication with the first delivery pipe 42, the air supply assembly 60 being configured to supply compressed dry air into the first delivery pipe 42.
It can be seen that by providing the gas supply assembly 60 to fill the injection tube 41 with the pressurized gas and injecting the pressurized gas from the injection hole 411, the annular gas curtain is formed to block the centrifugally moving polishing liquid, thereby reducing the loss of the polishing liquid out of the polishing pad 20 due to the centrifugal movement.
Illustratively, the gas supply assembly 60 may be a pressure gas cylinder or a structure of a gas cylinder, a gas pump and a matching pipeline, and the first delivery pipe 42 is connected to the pressure gas cylinder to supply the inert pressure gas such as compressed dry gas or nitrogen in the pressure gas cylinder into the injection pipe 41. An inert pressure gas such as compressed dry gas or nitrogen gas in the gas cylinder may be supplied to the injection pipe 41 by an air pump. Specifically, compressed dry gas is sucked into the compressor through air and compressed, and compressed air with higher temperature is cooled through the cooler. Then, the moisture in the air is removed by an adsorption type or freeze type dryer, and finally the oil and other particles are removed by a fine filter to ensure that clean and dry compressed dry gas is obtained.
In some embodiments of the present invention, the wafer chemical mechanical polishing apparatus 100 further comprises a vacuum device 70, the vacuum device 70 being in communication with the injection passage and configured to evacuate the gas from the injection passage.
It can be seen that the vacuum device 70 is provided to enable the gas in the injection channel to be pumped out by the vacuum device 70 after the wafer is polished chemically and mechanically, so as to clean the injection channel, and avoid gas residues in the injection channel from affecting the gaseous environment of the processing chamber of the wafer 80.
Illustratively, the vacuum apparatus 70 may be a vacuum pump-line structure, in which a vacuum pump is in communication with the injection passage, and the vacuum pump is operated to make a negative pressure to pump out the gas contained in the injection passage and the first and second transfer pipes 42 and 43 so that the injection passage and the first and second transfer pipes 42 and 43 are free of residual gas to ensure the processing environment of the wafer 80.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202510923598.XA CN120588103A (en) | 2025-07-04 | 2025-07-04 | Wafer chemical mechanical polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202510923598.XA CN120588103A (en) | 2025-07-04 | 2025-07-04 | Wafer chemical mechanical polishing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN120588103A true CN120588103A (en) | 2025-09-05 |
Family
ID=96895867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202510923598.XA Pending CN120588103A (en) | 2025-07-04 | 2025-07-04 | Wafer chemical mechanical polishing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN120588103A (en) |
-
2025
- 2025-07-04 CN CN202510923598.XA patent/CN120588103A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3678468B2 (en) | Polishing device | |
| TWI691367B (en) | Method and system for polishing pad cleaning | |
| KR100328607B1 (en) | Combined slurry dispenser and rinse arm and method of operation | |
| TWI721530B (en) | Buff treatment apparatus and method for cleaning supporting surface of buff table of the same | |
| US7452264B2 (en) | Pad cleaning method | |
| KR100336933B1 (en) | Surface polishing machine | |
| TWI808233B (en) | Apparatus for polishing and method for polishing | |
| KR101816694B1 (en) | Chemical mechanical polishing apparatus and control method thereof | |
| US7997958B2 (en) | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces | |
| JP2008078673A (en) | Polishing apparatus and polishing method | |
| US7288165B2 (en) | Pad conditioning head for CMP process | |
| CN112518573B (en) | Polishing apparatus, polishing machine, and polishing method | |
| JP2004514300A (en) | Cleaning apparatus for cleaning a polishing cloth used for polishing a semiconductor wafer | |
| KR100615100B1 (en) | Polishing pad cleaner and chemical mechanical polishing apparatus having the same | |
| CN120588103A (en) | Wafer chemical mechanical polishing equipment | |
| JP3768399B2 (en) | Dressing device and polishing device | |
| JP2002509367A (en) | Cleaning / buffing polishing equipment used in wafer processing equipment | |
| KR101786485B1 (en) | Chemical mechanical polishing system | |
| CN222914746U (en) | Semiconductor cleaning equipment | |
| JP2005026274A (en) | Method of polishing edge of semiconductor wafer | |
| KR100523631B1 (en) | Chemical-mechanical polisher | |
| KR100796557B1 (en) | Cleaner of chemical mechanical polishing equipment | |
| KR20170104785A (en) | Control method of chemical mechanical polishing system | |
| US20230390894A1 (en) | Condensed gas pad conditioner | |
| JP2002292568A (en) | Manufacturing methods of blast device and ceramic dynamic pressure bearing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |