CN120639082B - A transistor drive system with adaptive variable resistance - Google Patents

Abstract

The invention relates to the technical field of transistor driving, in particular to a transistor driving system of a self-adaptive strain resistor, which comprises a data acquisition module, a driving analysis module, a stage division module and a stage driving module, wherein the data acquisition module is used for determining whether grid resistance driving is required to be carried out for a current opening process according to an abnormal reference value, and when the grid resistance driving is carried out for the current opening process, the driving analysis module is used for carrying out stage driving or overall driving on the grid resistance according to miller platform time and a change rate fluctuation value, the stage division module is used for determining whether secondary division is carried out for each stage according to a stage comparison value corresponding to each stage, the stage driving module is used for determining that the grid resistance is regulated for characteristic preset segments or all preset segments according to the number of preset segments and regulating the grid resistance according to paragraph change abnormal degree, and the overall driving module is used for regulating the grid resistance according to an opening stage representation value. The invention can reduce the conduction loss of the transistor.

Description

Transistor driving system of self-adaptive strain resistor

Technical Field

The invention relates to the technical field of transistor driving, in particular to a transistor driving system of a self-adaptive strain resistor.

Background

The driving performance of the transistor directly determines the efficiency, reliability and electromagnetic compatibility of the power electronics system. The gate resistance is used as a core parameter of the driving circuit, and has obvious influence on the characteristics of the transistor, such as switching speed, switching loss, voltage oscillation and the like. However, the rapid switching process of the transistor can generate extremely large current change rate and voltage change rate, so that the ringing and overshoot phenomena are accompanied in the switching transient process, and the risk of damaging the device is greatly increased. Therefore, how to adaptively adjust the gate resistance according to the real-time state of the transistor to improve the safety and stability of the transistor operation is a problem to be solved by those skilled in the art.

Chinese patent publication No. CN117914302a discloses a transistor driving circuit and a transistor driving method, including a driving force limiting circuit that maintains a gate potential of a driven transistor to a prescribed driving force limiting potential corresponding to a threshold voltage of the driven transistor when driven by the driven transistor, and a delay time adjusting circuit that converts the gate potential to the driving force limiting potential when the driving force limiting circuit operates. However, the above scheme has the following problems that the fixed gate potential is maintained during the driving force limitation period, the gate resistance cannot be adaptively adjusted according to the actual states of different stages of the turn-on process, so that the turn-on loss of the transistor is high, and the safety and stability of the operation of the transistor are poor.

Disclosure of Invention

Therefore, the invention provides a transistor driving system of a self-adaptive strain resistor, which is used for solving the problems that in the prior art, the grid resistance cannot be adaptively adjusted according to the actual states of different stages of the opening process, so that the conduction loss of a transistor is high, and the working safety and stability of the transistor are poor.

In order to achieve the above object, the present invention provides a transistor driving system of self-adaptive strain resistance, comprising:

the data acquisition module is used for acquiring transistor data;

The driving analysis module is connected with the data acquisition module and used for determining whether grid resistance driving is required for the current opening process according to the abnormal reference value, and carrying out staged driving or integral driving on the grid resistance according to the Miller platform time and the change rate fluctuation value when the grid resistance driving is carried out for the current opening process;

The phase dividing module is respectively connected with the data acquisition module and the driving analysis module and is used for determining whether secondary division is carried out on each phase according to the phase comparison value corresponding to each phase in the phase driving and carrying out association division according to the grid voltage change value to obtain a plurality of association intervals when the secondary division is carried out;

the phase driving module is connected with the phase analysis module and used for determining to adjust the grid resistance aiming at the characteristic preset section or all preset sections according to the number of the preset sections and adjusting the grid resistance according to the abnormal degree of the paragraph change;

and the integral driving module is connected with the driving analysis module and used for adjusting the grid resistance according to the characterization value of the opening stage in integral driving.

Further, the driving analysis module drives the grid resistor in the current opening process when the abnormal reference value is larger than or equal to a preset abnormal reference value;

The abnormal reference value is determined according to the degree of abnormality of the change rate of the target opening process;

if the change rate abnormality is greater than or equal to the preset change rate abnormality, determining an abnormality reference value according to the change rate abnormality;

if the change rate abnormality is smaller than the preset change rate abnormality, determining an abnormality reference value according to the change rate abnormality comparison value.

Further, the driving analysis module responds to the miller platform time being smaller than the preset miller platform time and the phase current difference being smaller than the preset phase current difference, and drives the grid resistor in a staged mode.

Further, the stage division module determines whether to divide each stage twice according to the stage comparison value corresponding to each stage, including:

For a single stage of the process,

If the phase comparison value corresponding to the phase is larger than or equal to the preset phase comparison value, performing secondary division on the phase;

If the phase comparison value corresponding to the phase is smaller than the preset phase comparison value, the phase is not required to be divided secondarily.

Further, the stage division module performs association division according to the gate voltage variation value, including:

For a single stage of the process,

If the gate voltage variation value is greater than or equal to the preset gate voltage variation value, performing association division according to the gate voltage floating value;

if the gate voltage variation value is smaller than the preset gate voltage variation value, performing association division according to the junction temperature variation rate.

Further, the stage driving module responds to the fact that the number of the preset segments is larger than or equal to the preset number of the preset segments, and then grid resistance adjustment is conducted on the characteristic preset segments;

The characteristic pre-adjustment section is a pre-adjustment section with a change threshold value larger than a preset change threshold value, and the pre-adjustment section comprises each associated section in each stage of secondary division and each stage of non-secondary division.

Further, the phase driving module responds to the preset number of the preset segments being smaller than the preset number of the preset segments, and then adjusts the grid resistance of all the preset segments.

Further, the stage driving module performs increasing adjustment on the grid resistance according to the abnormal degree of the paragraph change;

The increasing value of the grid resistance corresponding to the single preset section is in positive correlation with the abnormal variation degree of the section corresponding to the preset section.

Further, the driving analysis module responds to the miller platform time being greater than or equal to a preset Mi Leping stage time or the stage current difference being greater than or equal to a preset stage current difference, and integrally drives the grid resistor.

Further, the integral driving module increases and adjusts the grid resistance according to the characteristic value of the opening stage;

the increasing value of the grid resistor and the characteristic value of the opening stage are in positive correlation.

Compared with the prior art, the method has the beneficial effects that in the technical scheme, the abnormal degree of the change rate of the target opening process effectively reflects the abnormal degree of the change of the drain-source current and the drain-source voltage of the target opening process, and further, the abnormal reference value is adaptively determined according to the abnormal degree of the change rate or the comparison value of the abnormal degree of the change rate, so that the determination of the abnormal reference value is more in line with the actual application scene, and further, whether the grid resistance driving is required for the current opening process is determined according to the abnormal reference value, thereby being beneficial to reducing the conduction loss of a transistor and improving the safety and the stability of the operation of the transistor.

Furthermore, the stability of the switching-on loss degree and the current change rate of each stage is effectively reflected through the Miller platform time and the change rate fluctuation value, and further the grid resistance is adaptively driven in stages or integrally according to the Miller platform time and the change rate fluctuation value, so that the grid resistance adjustment is more in line with the actual application scene, the limitation of the traditional fixed parameter scheme in a complex scene is avoided, and the switching-on loss of the transistor is reduced.

Furthermore, the deviation degree of the stage and the overall average level is effectively reflected through the stage comparison value, whether secondary division is carried out or not is further determined according to the stage comparison value, when the stage comparison value is large, the current characteristic of the stage is obvious in difference with other stages, the secondary division is carried out at the moment, the grid resistance can be finely adjusted, and the abnormal current change rate can be accurately restrained through the fine-divided resistance adjustment, so that loss is reduced.

Furthermore, the invention effectively reflects the change degree of the grid voltage through the change value of the grid voltage, and further adaptively carries out association division according to the change amount of the grid voltage or the change rate of the junction temperature according to the change value of the grid voltage, and further adapts to the association division mode of an actual scene, so that the switching characteristics in each association interval are highly consistent, and the invention is beneficial to realizing the fine adjustment of the grid resistance.

Drawings

FIG. 1 is a block diagram of a transistor driving system with adaptive strain resistance according to the present invention;

FIG. 2 is a flow chart of determining whether gate resistance driving is required for a current turn-on process according to an abnormal reference value;

FIG. 3 is a flow chart of the present invention for staged or overall driving of gate resistance according to Miller plateau time and rate of change fluctuation;

FIG. 4 is a flow chart of the present invention for determining gate resistance adjustment for a characteristic preconditioning segment or all preconditioning segments based on the number of preconditioning segments.

Detailed Description

The invention will be further described with reference to examples for the purpose of making the objects and advantages of the invention more apparent, it being understood that the specific examples described herein are given by way of illustration only and are not intended to be limiting.

Preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are merely for explaining the technical principles of the present invention, and are not intended to limit the scope of the present invention.

It should be noted that, in the description of the present invention, terms such as "upper," "lower," "left," "right," "inner," "outer," and the like indicate directions or positional relationships based on the directions or positional relationships shown in the drawings, which are merely for convenience of description, and do not indicate or imply that the apparatus or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.

Referring to fig. 1 to 4, the present invention provides a transistor driving system with adaptive strain resistance, comprising:

the data acquisition module is used for acquiring transistor data;

The driving analysis module is connected with the data acquisition module and used for determining whether grid resistance driving is required for the current opening process according to the abnormal reference value, and carrying out staged driving or integral driving on the grid resistance according to the Miller platform time and the change rate fluctuation value when the grid resistance driving is carried out for the current opening process;

The phase dividing module is respectively connected with the data acquisition module and the driving analysis module and is used for determining whether secondary division is carried out on each phase according to the phase comparison value corresponding to each phase in the phase driving and carrying out association division according to the grid voltage change value to obtain a plurality of association intervals when the secondary division is carried out;

the phase driving module is connected with the phase analysis module and used for determining to adjust the grid resistance aiming at the characteristic preset section or all preset sections according to the number of the preset sections and adjusting the grid resistance according to the abnormal degree of the paragraph change;

and the integral driving module is connected with the driving analysis module and used for adjusting the grid resistance according to the characterization value of the opening stage in integral driving.

The invention has the application scene of adjusting the grid resistance in the transistor switching-on process, wherein the switching-on process of the transistor refers to a dynamic process of transition from a switching-off state to a switching-on state, the target transistor is a transistor which is required to be driven currently, the target switching-on process is a switching-on process adjacent to the current switching-on process and with the time earlier than that of the current switching-on process, and the reference switching-on process is a switching-on process earlier than the target switching-on process and adjacent to the target switching-on process;

The transistor data comprise a target opening process of the target transistor, monitoring data corresponding to a reference opening process and a plurality of stages of labeling data of the target transistor;

The monitoring data comprise various electrical parameters which are monitored in real time along with time in the single turn-on process of the target transistor, wherein the electrical parameters comprise gate voltage, drain-source current and drain-source voltage, the gate voltage is measured by a differential probe measurement method, the drain-source current is measured by a Hall effect current sensor, and the drain-source voltage is measured by a high-voltage differential probe, which is easy to understand by a person skilled in the art and is not described in detail;

The single-stage labeling data is the starting time and the ending time of four stages corresponding to a single opening process of a target transistor, and the stages comprise an opening delay stage, a current rising stage, a voltage dropping stage and a grid continuous charging stage according to the sequence from the early to the late, wherein the starting time of the single stage of the single opening process is the duration from the starting time of the stage to the starting time of the opening process, and the ending time of the single stage of the single opening process is the duration from the ending time of the stage to the starting time of the opening process;

The time range corresponding to the single stage of the current opening process, the target opening process and the reference opening process is [ average value of the starting time of the stage corresponding to each labeling monitoring data, average value of the ending time of the stage corresponding to each labeling monitoring data ];

According to the invention, a plurality of histories are correspondingly arranged, wherein any one history record at least one abnormal reference value, abnormal current change rate, abnormal voltage change rate, current change rate fluctuation value, abnormal change rate comparison value and the like in the history process of adjusting the grid resistance in the transistor driving process, each history record corresponds to a qualified mark, the qualified mark records whether the process of adjusting the grid resistance in the transistor driving process meets the requirement of a user or not, the qualified mark can be recorded manually, the user can determine whether the process of adjusting the grid resistance in the transistor driving process meets the requirement or not according to a self-set index, the self-set index can be but is not limited to the number of errors, and the number of errors is not repeated herein, wherein the number of errors is the number of times that the drain-source voltage change rate exceeds 50V/ns in the grid resistance adjusting process.

Specifically, the driving analysis module drives the grid resistor in the current opening process when the abnormal reference value is greater than or equal to a preset abnormal reference value;

The abnormal reference value is determined according to the degree of abnormality of the change rate of the target opening process;

if the change rate abnormality is greater than or equal to the preset change rate abnormality, determining an abnormality reference value according to the change rate abnormality;

if the change rate abnormality is smaller than the preset change rate abnormality, determining an abnormality reference value according to the change rate abnormality comparison value.

If the abnormal reference value is smaller than the preset abnormal reference value, gate resistance driving is not needed for the current opening process;

The method comprises the steps that a preset abnormal reference value is valued, a user can determine according to an actual application scene, the larger the accuracy requirement of the user for reducing the transistor loss is, the smaller the preset abnormal reference value is, a preset abnormal reference value valued method is provided, a historical record of grid resistance driving by the user aiming at the current opening process is detected, and an average value of the abnormal reference values corresponding to the historical record capable of meeting the user requirement is recorded as the preset abnormal reference value;

providing a setting method of time points, taking the starting time of a single opening process as a starting point, setting an interval point at intervals of 1ns in time sequence until the opening process is finished, and recording the starting point and each interval point as time points;

Rate of change abnormality = current rate of change abnormality/preset current rate of change abnormality + voltage rate of change abnormality/preset voltage rate of change abnormality;

The method comprises the steps that a user can determine the value of the preset current change rate abnormality and the preset voltage change rate abnormality according to an actual application scene, the larger the user needs for improving the determination precision of the change rate abnormality, the smaller the value of the preset current change rate abnormality and the preset voltage change rate abnormality, the average value of the current change rate abnormality and the average value of the voltage change rate abnormality, which correspond to each historical record which can meet the user needs and does not need to be adjusted for grid resistance, are respectively recorded as the preset current change rate abnormality and the preset voltage change rate abnormality;

the abnormality degree of the current change rate= |current change rate fluctuation value-preset current change rate fluctuation value|, the abnormality degree of the voltage change rate= |voltage change rate fluctuation value-preset voltage change rate fluctuation value|, the current change rate fluctuation value is the standard deviation of the current change rate corresponding to each time point in the target opening process, and the voltage change rate fluctuation value is the standard deviation of the voltage change rate corresponding to each time point in the target opening process;

The preset current change rate fluctuation value is an average value of current change rate fluctuation values corresponding to all histories which can meet the requirements of users and do not need to be driven by the grid resistor, and the preset voltage change rate fluctuation value is an average value of voltage change rate fluctuation values corresponding to all histories which can meet the requirements of users and do not need to be driven by the grid resistor;

Drawing a time-drain source current image and a time-drain source voltage image of a target opening process, wherein the time-drain source current image takes time as an abscissa and drain source current as an ordinate, the time-drain source voltage image takes time as an abscissa and drain source voltage as an ordinate, the voltage change rate corresponding to a single time point is the slope of the time point in the time-drain source voltage image corresponding to the target opening process, and the current change rate corresponding to the single time point is the slope of the time point in the time-drain source current image corresponding to the target opening process;

The method comprises the steps that a user can determine the value of the abnormal degree of the preset change rate according to an actual application scene, the larger the value of the abnormal degree of the preset change rate is, the larger the requirement of the user for determining an abnormal reference value according to a change rate abnormal degree comparison value is, the history record for determining the abnormal reference value according to the change rate abnormal degree comparison value is detected, and the average value of the change rate abnormal degrees corresponding to the history record capable of meeting the requirement of the user is recorded as the preset change rate abnormal degree;

When determining an abnormal reference value according to the change rate abnormality degree, the abnormal reference value=change rate abnormality degree/an average value of change rate abnormality degrees corresponding to a history record capable of meeting the user demand;

When determining an abnormal reference value according to the change rate abnormality degree comparison value, the abnormal reference value=change rate abnormality degree comparison value/average value of change rate abnormality degree comparison values corresponding to historic records capable of meeting user requirements;

the change rate abnormality comparison value=change rate abnormality corresponding to the target opening process-change rate abnormality corresponding to the reference opening process;

It can be understood that when the variation rate abnormality is greater than or equal to the preset variation rate abnormality, it is indicated that the fluctuation of the drain-source current or the drain-source voltage in the current opening process has deviated from the normal range obviously, and the abnormality degree is directly quantified at this time, the rapid response and the adjustment triggering are required, and when the variation rate abnormality is smaller than the preset variation rate abnormality, although the fluctuation does not reach the obvious abnormality, there may be a trend variation abnormality, and at this time, the variation trend of the abnormality is required to be analyzed, and the potential risk is pre-determined in advance.

Specifically, the driving analysis module responds to the miller platform time being smaller than the preset miller platform time and the phase current difference being smaller than the preset phase current difference, and drives the grid resistor in a staged mode.

The miller voltage is a value of voltage which is reduced to be kept stable along with time in a voltage reduction stage of the target opening process;

the stage current difference degree is the standard deviation of the current comparison value corresponding to each stage;

current comparison value corresponding to a single stage = maximum current change rate corresponding to the stage-average value of maximum current change rates of the stages corresponding to each history record capable of satisfying user requirements;

The maximum current change rate corresponding to a single stage is the maximum value of the current change rate corresponding to each time point of the stage in the target opening process;

The method comprises the steps that a preset miller platform time and a preset stage current difference degree are obtained, a user can determine according to an actual application scene, the larger the precision requirement of the user for reducing transistor loss is, the larger the preset miller platform time and the preset stage current difference degree are, a preset miller platform time and a preset stage current difference degree obtaining method is provided, a history record of integral driving of a grid resistor by the user is detected, and an average value of the miller platform time and an average value of the stage current difference degree corresponding to the history record capable of meeting the user requirement are respectively recorded as the preset miller platform time and the preset stage current difference degree.

It can be understood that the excessive duration of the miller stage may cause an increase in turn-on loss, and the excessive current difference of the stages indicates that the stability of the current change rate of each stage is poor, and when the duration of the miller stage is smaller than the preset duration of the miller stage and the current difference of the stages is smaller than the current difference of the preset stages, the switching characteristics of the target transistor are relatively stable, and the gate resistances of different stages are adjusted in a targeted manner through staged driving, so that the dynamic control of the turn-on process can be refined, the turn-on loss can be reduced to the greatest extent, and the efficient and stable dual optimization can be realized.

Specifically, the stage division module determines whether to divide each stage twice according to the stage comparison value corresponding to each stage, including:

For a single stage of the process,

If the phase comparison value corresponding to the phase is larger than or equal to the preset phase comparison value, performing secondary division on the phase;

If the phase comparison value corresponding to the phase is smaller than the preset phase comparison value, the phase is not required to be divided secondarily.

Wherein, the phase comparison value corresponding to a single phase=the current comparison value corresponding to the phase-the average value of the current comparison values corresponding to the phases;

The value of the comparison value of the preset stage can be determined by a user according to the actual application scene, the smaller the value of the comparison value of the preset stage is, the finer the stage division is performed by the user aiming at each stage, the more accurate the grid resistance adjustment is performed aiming at the stage with obvious deviation so as to reduce the larger the requirement of transistor loss is, the average value of the phase comparison values corresponding to the phases which can meet the requirement of the user and are subjected to secondary division in the history record is recorded as the preset phase comparison value.

Specifically, the phase division module performs association division according to the gate voltage variation value, and includes:

For a single stage of the process,

If the gate voltage variation value is greater than or equal to the preset gate voltage variation value, performing association division according to the gate voltage floating value;

if the gate voltage variation value is smaller than the preset gate voltage variation value, performing association division according to the junction temperature variation rate.

Wherein, the gate voltage change value corresponding to a single stage=the gate voltage corresponding to the final moment of the stage in the target opening process-the gate voltage corresponding to the initial moment of the stage in the target opening process;

The method comprises the steps that a user can determine the value of a preset grid voltage change value according to an actual application scene, the smaller the value of the preset grid voltage change value is, the larger the user needs to conduct association division according to the grid voltage change amount, the method for the value of the preset grid voltage change value is provided, historical records of association division according to the grid voltage change amount are detected, and the average value of the grid voltage change values corresponding to the historical records capable of meeting the user needs is recorded as the preset grid voltage change value;

The method comprises the steps of obtaining a grid voltage floating value corresponding to a single time point, namely grid voltage corresponding to the time point which is earlier than the time point and is adjacent to the time point, wherein the junction temperature change rate corresponding to the single time point, namely junction temperature corresponding to the time point which is earlier than the time point and is adjacent to the time point, wherein the junction temperature corresponding to the single time point is the actual working temperature of a PN junction in a target transistor at the time point, and measuring the actual working temperature through a thermistor or infrared temperature measurement, which is a common technical means for a person skilled in the art, and is not described in detail;

The associative division according to the gate voltage floating value includes:

Performing association analysis on each time point of a single stage according to the sequence from early to late, when performing association analysis on each time point, marking the time point as a target time point, marking each time point of other non-marked associated intervals outside the target time point as a reference time point, marking a first reference time point which meets preset conditions and is later than the target time point as a characteristic time point, marking the minimum time range which can contain each reference time point before the characteristic time point and the target time point as an associated interval, and continuing performing association analysis on the time points which are not marked with the associated interval until each time point of the stage is marked with the associated interval, wherein, if the last target time point does not have the corresponding characteristic time point in the analysis process, marking the time range which can contain the last target time point and the last time point of the stage as an associated interval;

When the association division is carried out according to the grid voltage floating value, the preset condition is that the absolute value of the difference value of the grid voltage floating value with the target time point is larger than the preset grid voltage floating value difference value;

when carrying out association division according to the junction temperature change rate, the preset condition is that the absolute value of the difference value of the junction temperature change rate with the target time point is larger than the preset junction temperature change rate difference value;

The method comprises the steps that a preset grid voltage floating value difference value and a preset junction temperature change rate difference value are obtained, a user can determine according to an actual application scene, the larger the precision requirement of the user for reducing transistor loss is for more accurate grid resistance adjustment at a stage with obvious deviation, the smaller the preset grid voltage floating value difference value and the preset junction temperature change rate difference value are, the method for obtaining the preset grid voltage floating value difference value and the preset junction temperature change rate difference value is provided, the average value of the reference grid voltage floating value difference values corresponding to each associated section in a historical record which is divided in an associated mode according to the grid voltage floating value and can meet the user requirement is recorded as the preset grid voltage floating value difference value, and the average value of the reference junction temperature change rate difference values corresponding to each associated section in the historical record which is divided in an associated mode according to the junction temperature change rate difference value and can meet the user requirement is recorded as the preset junction temperature change rate difference value;

the reference grid voltage floating value difference value and the reference junction temperature change rate difference value corresponding to the single association interval in the history record are respectively the absolute value of the difference value of the grid voltage floating value corresponding to any two time points in the single association interval and the absolute value of the difference value of the junction temperature change rate corresponding to any two time points in the single association interval;

marking each associated section in each stage of secondary division and each stage of no secondary division as a preset section;

It can be understood that if the gate voltage variation value is greater than or equal to the preset gate voltage variation value, it indicates that the intensity of the driving signal varies significantly and directly affects the switching speed, and at this time, the fluctuation of the gate voltage is a dominant factor in the switching process, and if the gate voltage variation value is less than the preset gate voltage variation value, it indicates that the driving signal tends to be stable, but the power loss inside the target transistor causes the junction temperature to rise rapidly, and at this time, the junction temperature variation rate becomes a more sensitive indicator reflecting the loss degree.

Specifically, the stage driving module responds to the fact that the number of preset segments is larger than or equal to the preset number of preset segments, and adjusts the grid resistance aiming at the characteristic preset segments;

The characteristic pre-adjustment section is a pre-adjustment section with a change threshold value larger than a preset change threshold value, and the pre-adjustment section comprises each associated section in each stage of secondary division and each stage of non-secondary division.

Wherein, the change threshold value corresponding to a single preconditioning segment=the average value of the gate voltage change quantity corresponding to each time point in the preconditioning segment in the target opening process/the average value of the gate voltage change quantity corresponding to each time point in the target opening process+the average value of the junction temperature change rate corresponding to each time point in the preconditioning segment in the target opening process/the average value of the junction temperature change rate corresponding to each time point in the target opening process;

The preset number of preset segments and the preset change threshold value can be determined according to actual application scenes, it can be understood that when the preset number of segments is large, the overall efficiency is possibly reduced due to insufficient processing capacity, the smaller the preset number of preset segments is for increasing the accuracy requirement of the processing efficiency, the larger the preset change threshold value is, the preset number of preset segments and the preset change threshold value is provided, the average value of the preset number of segments corresponding to the historical record which is used for carrying out grid resistance adjustment on all preset segments and can meet the user requirement is recorded as the preset number of preset segments, and the change threshold value corresponding to each characteristic preset segment in the historical record which can meet the user requirement is recorded as the preset change threshold value;

it can be understood that when the number of preset segments is greater than or equal to the number of preset segments, the number of preset segments to be processed is larger, the capability range of the system for efficiently processing all segments is exceeded, and at the moment, the characteristic preset segments with the most obvious influence on the switching characteristics should be preferentially focused, so that the balance between the loss optimization and the resource consumption is realized through targeted adjustment.

When the number of the preset segments is smaller than that of the preset segments, the number of the preset segments to be processed is smaller, and the system has enough capability to carry out fine adjustment on all segments, so that the optimization effect is effectively improved.

Specifically, the phase driving module responds to the preset number of preset segments being smaller than the preset number of preset segments, and then adjusts the grid resistance for all preset segments.

Specifically, the stage driving module performs increasing adjustment on the grid resistance according to the abnormal degree of the paragraph change;

The increasing value of the grid resistance corresponding to the single preset section is in positive correlation with the abnormal variation degree of the section corresponding to the preset section.

Wherein, the abnormal degree of paragraph change corresponding to a single preset segment is the standard deviation of the current change rate corresponding to each time point in the preset segment in the process of opening the target, the preset current change rate fluctuation value is the standard deviation of the voltage change rate corresponding to each time point in the preset segment in the process of opening the target, the preset voltage change rate fluctuation value is the preset voltage change rate abnormality degree;

For a single preset segment, marking the abnormal degree of the paragraph change corresponding to the preset segment as a1, marking each preset segment in a history record which can meet the requirement of a user and is subjected to increasing adjustment on the grid resistance according to the abnormal degree of the paragraph change as an analysis preset segment, marking the average value of the abnormal degree of the paragraph change corresponding to each analysis preset segment as a2, marking the average value of the increasing value of the grid resistance corresponding to each analysis preset segment as b, wherein the increasing value of the grid resistance corresponding to each preset segment is= (a 1/a 2) x b;

It can be understood that the fluctuation intensity of the switching process is reflected by the variation degree of the section, when the variation degree of the section is high, the switching process is shown to have intense oscillation, the oscillation energy is dissipated in the device, the switching loss is increased, the gate driving current is reduced by increasing the gate resistance, the switching speed is slowed down, and the oscillation caused by parasitic parameters is restrained.

Specifically, the driving analysis module responds to the miller platform time being greater than or equal to a preset Mi Leping stage time or the stage current difference being greater than or equal to a preset stage current difference, and integrally drives the grid resistor.

Specifically, the integral driving module performs increasing adjustment on the grid resistance according to the characteristic value of the opening stage;

the increasing value of the grid resistor and the characteristic value of the opening stage are in positive correlation.

Wherein, the opening phase representation value=miller platform time/preset miller platform time+phase current difference/preset phase current difference;

The average value of the increase values of the grid resistance corresponding to each history record which is integrally driven for the grid resistance and can meet the user requirement is marked as b0, and the average value of the opening stage characterization values corresponding to each history record which is integrally driven for the grid resistance and can meet the user requirement is marked as c;

an increase value of the gate resistance= (on-phase characterization value/c) ×b0;

It can be understood that the shorter the miller plateau time, the faster the device is turned on, the higher the degree of difference, the greater the stage current difference, the smoother the current waveform, and possibly oscillations or spikes, and also the loss can be increased, the larger the turn-on stage characterization value comprehensively quantifies the "over-rapidity" and "instability" of the switching process, the faster the turn-on stage characterization value, the more severe the turn-on speed or current fluctuation, and the gate resistance needs to be increased to slow down the turn-on speed and suppress oscillations caused by parasitic parameters.

Thus far, the technical solution of the present invention has been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of protection of the present invention is not limited to these specific embodiments. Equivalent modifications and substitutions for related technical features may be made by those skilled in the art without departing from the principles of the present invention, and such modifications and substitutions will be within the scope of the present invention.

Claims (10)

1. A transistor driving system of self-adaptive strain resistance, comprising:

the data acquisition module is used for acquiring transistor data;

The driving analysis module is connected with the data acquisition module and used for determining whether grid resistance driving is required for the current opening process according to the abnormal reference value, and carrying out staged driving or integral driving on the grid resistance according to the Miller platform time and the change rate fluctuation value when the grid resistance driving is carried out for the current opening process;

The phase dividing module is respectively connected with the data acquisition module and the driving analysis module and is used for determining whether secondary division is carried out on each phase according to the phase comparison value corresponding to each phase in the phase driving and carrying out association division according to the grid voltage change value to obtain a plurality of association intervals when the secondary division is carried out;

the phase driving module is connected with the phase analysis module and used for determining to adjust the grid resistance aiming at the characteristic preset section or all preset sections according to the number of the preset sections and adjusting the grid resistance according to the abnormal degree of the paragraph change;

and the integral driving module is connected with the driving analysis module and used for adjusting the grid resistance according to the characterization value of the opening stage in integral driving.

2. The transistor driving system of self-adaptive strain resistance according to claim 1, wherein the driving analysis module performs gate resistance driving for the current turn-on process when the abnormal reference value is greater than or equal to a preset abnormal reference value;

The abnormal reference value is determined according to the degree of abnormality of the change rate of the target opening process;

if the change rate abnormality is greater than or equal to the preset change rate abnormality, determining an abnormality reference value according to the change rate abnormality;

if the change rate abnormality is smaller than the preset change rate abnormality, determining an abnormality reference value according to the change rate abnormality comparison value.

3. The transistor driving system of claim 2, wherein the driving analysis module is responsive to the miller plateau time being less than a predetermined miller plateau time and the phase current differential being less than a predetermined phase current differential for the gate resistance to drive in stages.

4. A transistor driving system of a self-adaptive strain resistor according to claim 3, wherein the phase dividing module determines whether to divide each phase twice according to the phase comparison value corresponding to each phase, comprising:

For a single stage of the process,

If the phase comparison value corresponding to the phase is larger than or equal to the preset phase comparison value, performing secondary division on the phase;

If the phase comparison value corresponding to the phase is smaller than the preset phase comparison value, the phase is not required to be divided secondarily.

5. The transistor driving system of self-adaptive strain resistance of claim 4, wherein the phase division module performs the associated division according to the gate voltage variation value, comprising:

For a single stage of the process,

If the gate voltage variation value is greater than or equal to the preset gate voltage variation value, performing association division according to the gate voltage floating value;

if the gate voltage variation value is smaller than the preset gate voltage variation value, performing association division according to the junction temperature variation rate.

6. The transistor drive system of self-adaptive strain resistance of claim 5 wherein the phase drive module is responsive to the number of preset segments being greater than or equal to a preset number of preset segments to perform gate resistance adjustment for a characteristic preset segment;

The characteristic pre-adjustment section is a pre-adjustment section with a change threshold value larger than a preset change threshold value, and the pre-adjustment section comprises each associated section in each stage of secondary division and each stage of non-secondary division.

7. The self-adaptive strain resistive transistor drive system of claim 6, wherein the phase drive module adjusts the gate resistance for all of the pre-set segments in response to the number of pre-set segments being less than a pre-set number of pre-set segments.

8. The transistor driving system of claim 7, wherein the phase driving module performs an increase adjustment for the gate resistance according to a paragraph variation anomaly;

The increasing value of the grid resistance corresponding to the single preset section is in positive correlation with the abnormal variation degree of the section corresponding to the preset section.

9. A transistor driving system for self-adaptive strain resistors according to claim 3, wherein the driving analysis module is responsive to the miller plateau time being greater than or equal to a preset Mi Leping times or the stage current difference being greater than or equal to a preset stage current difference for overall driving of the gate resistors.

10. The transistor driving system of self-adaptive strain resistance of claim 9, wherein the overall driving module performs an incremental adjustment for gate resistance based on an on-phase characterization value;

the increasing value of the grid resistor and the characteristic value of the opening stage are in positive correlation.