CN120749523A - A photoelectric packaging structure - Google Patents

Abstract

The present disclosure provides an optoelectronic packaging structure. The structure includes: a first substrate, an electrical integrated chip and a first optical integrated chip, and the electrical integrated chip is located on one side surface of the first substrate. The first optical integrated chip includes a plurality of matrix-distributed vertical cavity surface emitting lasers, and the plurality of first optical integrated chips circumferentially surround the electrical integrated chip, and the vertical cavity surface emitting laser includes a light emitting portion located at the bottom of the substrate. The vertical cavity surface emitting laser emits an optical signal toward one side surface of the first substrate through the light emitting portion based on the signal data of the electrical integrated chip. There is no need to transmit optical signals on the top of the electrical integrated chip and the first optical integrated chip, nor is there a need to set a reflective structure. Therefore, heat dissipation can be carried out on the top of the electrical integrated chip and the first optical integrated chip, thereby increasing the heat dissipation space and improving the heat dissipation rate, thereby reducing the operating temperature of the electrical integrated chip and the optical integrated chip and improving the reliability of the optoelectronic packaging structure.

Description

Photoelectric packaging structure

Technical Field

The disclosure relates to the technical field of photoelectric integration, in particular to a photoelectric packaging structure.

Background

In the current photoelectric co-packaging technology, a photoelectric packaging structure based on a VCSEL (VERTICALCAVITY SURFACE EMITTING LASER ) is generally adopted, and compared with other packaging structures, the VCSEL has the advantage of low cost, so that the photoelectric packaging structure based on the VCSEL has wide application prospect.

In the prior art, an ASIC (Application SPECIFIC INTEGRATED Circuit) chip and a plurality of VCSEL chips are packaged on the same PCB (Printed Circuit Board ) in an optoelectronic package structure, and the plurality of VCSEL chips are disposed around the ASIC chip, so as to achieve the purposes of reducing signal attenuation, reducing system power consumption, reducing cost, and highly integrating. In the actual operation process, the heat dissipated around the ASIC chip is huge, so a heat dissipating device needs to be additionally arranged above the ASIC chip and the VCSEL chip to reduce the ambient temperature of the ASIC chip.

However, the VCSEL can only emit laser along a surface perpendicular to the PCB board, and a reflective structure is required to be additionally arranged on the top of the VCSEL to realize edge outcoupling of the laser, and the reflective structure affects a heat dissipation space and heat dissipation efficiency of the heat dissipation device, so that the ASIC chip and the VCSEL chip are in a high-temperature working environment for a long time, and reliability of the optoelectronic package structure is reduced.

Disclosure of Invention

To overcome the problems in the related art, the present disclosure provides an optoelectronic package structure.

The present disclosure provides an optoelectronic package structure, comprising:

A first substrate;

an electrical integrated chip located on one side surface of the first substrate;

The array substrate comprises a plurality of first optical integrated chips, wherein each first optical integrated chip comprises a plurality of vertical cavity surface emitting lasers distributed in a matrix, the plurality of first optical integrated chips circumferentially surround the electric integrated chip, and each vertical cavity surface emitting laser comprises a light emitting part positioned at the bottom of the substrate;

Wherein the vertical cavity surface emitting laser emits an optical signal toward a side surface of the first substrate through the light emitting portion based on signal data of the electric integrated chip.

In some embodiments, the first optical integrated chip includes a plurality of first through holes, the first through holes expose light emitting portions of the vcsels, and the first through holes are disposed in one-to-one correspondence with the light emitting portions of the vcsels;

wherein, the optical signal emitted by the vertical cavity surface emitting laser is incident to one side surface of the first substrate through the first through hole.

In some embodiments, further comprising:

The light guide unit is positioned on one side surface of the first substrate, and is used for receiving the optical signal emitted by the vertical cavity surface emitting laser to one side surface of the first substrate and transmitting the optical signal to the optical signal output interface along a first direction parallel to the first substrate surface;

wherein, the orthographic projection of the light guide unit towards the first substrate surface at least covers the orthographic projection of the first through hole towards the first substrate surface.

In some embodiments, the light guiding unit comprises a plurality of light guiding coupling subunits and light guiding subunits, the light guiding coupling subunits are distributed on one side surface of the first substrate at intervals, the orthographic projection of the light guiding coupling subunits towards the first substrate at least covers the orthographic projection of the first through holes towards the first substrate, the light guiding coupling subunits are arranged in one-to-one correspondence with the first through holes, the light guiding subunits are positioned on one side surface of the first substrate and extend to the light signal output interface along a first direction parallel to the first substrate surface,

The light guide subunit is positioned on one side of the light guide coupling subunit away from the electric integrated chip and is connected with the light guide coupling subunit.

In some embodiments, the light guide coupling subunit comprises a waveguide coupler, and the material of the light guide subunit comprises a polymeric waveguide material.

In some embodiments, the first optical integrated chip includes a plurality of second through holes distributed at intervals, and the second through holes penetrate through the first optical integrated chip;

The photoelectric packaging structure also comprises a conductive unit, a first electrode and a second electrode, wherein the conductive unit is positioned on one side surface of the first substrate, which is close to the electric integrated chip, and comprises a first conductive subunit and a plurality of second conductive subunits, the first end of the first conductive subunit is electrically connected with the electric integrated chip, and the first conductive subunit extends from the electric integrated chip along the surface parallel to the first substrate;

the first end of the second conductive subunit is electrically connected with the second end of the first conductive subunit, and the second conductive subunit is positioned in the second through hole and is electrically connected with the vertical cavity surface emitting laser.

In some embodiments, the integrated optical device further comprises a second integrated optical chip, wherein a plurality of photodetectors distributed in a matrix are included in the second integrated optical chip, the photodetectors circumferentially surround the integrated optical chip, the photodetectors are located between the integrated optical chip and the vertical cavity surface emitting laser, and the photodetectors comprise light inlet portions located close to the surface of the first substrate.

In some embodiments, the second optical integrated chip includes a plurality of third through holes exposing light inlet portions of the photodetectors, the third through holes being disposed in one-to-one correspondence with the light inlet portions of the photodetectors,

The optical signal on the surface of the first substrate is incident to the light inlet part through the third through hole.

In some embodiments, the light guide coupling subunits are distributed on one side surface of the first substrate at intervals, and the third through holes expose the light guide coupling subunits and are arranged in one-to-one correspondence with the light guide coupling subunits.

In some embodiments, the second optical integrated chip includes a plurality of fourth through holes distributed at intervals, and the fourth through holes penetrate through the second optical integrated chip;

the second conductive subunit is located in the fourth through hole, and the photodetector is electrically connected with the second end of the second conductive subunit.

In some embodiments, further comprising:

The second substrate is positioned on one side surface of the first substrate, and the electric integrated chip, the first optical integrated chip and the second optical integrated chip are positioned on one side surface of the second substrate far away from the first substrate.

In some embodiments, the integrated circuit further comprises a second substrate, wherein the second substrate is positioned on one side surface of the first substrate, and the electric integrated chip is positioned on one side surface of the second substrate away from the first substrate;

The third substrate is positioned on one side surface of the first substrate, and the first optical integrated chip and the second optical integrated chip are positioned on one side surface of the third substrate far away from the first substrate.

The technical scheme provided by the embodiment of the disclosure can comprise the following beneficial effects:

According to the embodiment of the disclosure, the electric integrated chip is arranged on one side surface of the first substrate, and the plurality of vertical cavity surface emitting lasers in the first optical integrated chip circumferentially surround the electric integrated chip, so that high-speed electric signals output by the electric integrated chip can be converted into optical signals through the surrounding vertical cavity surface emitting lasers and are emitted, and efficient transmission of information by utilizing the optical signals is realized. Further, the vertical cavity surface emitting laser emits light through the light emitting part of the substrate, so that light signals can be emitted to the surface of the first substrate, the light signals are transmitted on the surface of the first substrate, the top of the electric integrated chip and the top of the first optical integrated chip are not required to be transmitted, and a reflecting structure is not required to be arranged, so that heat dissipation can be carried out on the tops of the electric integrated chip and the first optical integrated chip, the heat dissipation space is increased, the heat dissipation rate is improved, the working temperature of the electric integrated chip and the optical integrated chip is further reduced, and the reliability of the photoelectric packaging structure is improved.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.

FIG. 1 is a schematic cross-sectional view of an optoelectronic package structure as shown in some exemplary embodiments;

FIG. 2 is a schematic cross-sectional view of an optoelectronic package structure as shown in other exemplary embodiments;

FIG. 3 is a schematic cross-sectional view of an optoelectronic package structure as shown in further exemplary embodiments;

Fig. 4 is a schematic cross-sectional structure of an optoelectronic package structure as shown in further exemplary embodiments.

Detailed Description

Technical solutions in the examples (or "implementations") of the present disclosure will be clearly and completely described herein with reference to the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated.

If there are terms (e.g., upper, lower, left, right, front, rear, inner, outer, top, bottom, center, vertical, horizontal, longitudinal, lateral, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.) in relation to directional indications or positional relationships in the embodiments of the present disclosure, such terms are used merely to explain the relative positional relationships, movement, etc. between the components at a particular pose (as shown in the drawings), and if the particular pose changes, the directional indications or positional relationships correspondingly change. In addition, the terms "first," "second," and the like in the embodiments of the present disclosure are used for descriptive convenience only and are not to be construed as indicating or implying relative importance.

In the current photoelectric co-packaging technology, a photoelectric packaging structure based on a VCSEL (VERTICAL CAVITY Surface EMITTING LASER ) is generally adopted, and compared with other packaging structures, the VCSEL has the advantage of low cost, so that the photoelectric packaging structure based on the VCSEL has wide application prospect.

In the prior art, an ASIC (Application SPECIFIC INTEGRATED Circuit) chip and a plurality of VCSEL chips are packaged on the same PCB (Printed Circuit Board ) in an optoelectronic package structure, and the plurality of VCSEL chips are disposed around the ASIC chip, so as to achieve the purposes of reducing signal attenuation, reducing system power consumption, reducing cost, and highly integrating. In the actual operation process, the heat dissipated around the ASIC chip is huge, so a heat dissipating device needs to be additionally arranged above the ASIC chip and the VCSEL chip to reduce the ambient temperature of the ASIC chip.

However, the VCSEL can only emit laser along a surface perpendicular to the PCB board, and a reflective structure is required to be additionally arranged on the top of the VCSEL to realize edge outcoupling of the laser, and the reflective structure affects a heat dissipation space and heat dissipation efficiency of the heat dissipation device, so that the ASIC chip and the VCSEL chip are in a high-temperature working environment for a long time, and reliability of the optoelectronic package structure is reduced. In addition, in the prior art, an edge coupling scheme of the optical fiber internal fiber is generally adopted, cooperation of a PCB and an optical path needs to be comprehensively considered in structural design, and the optical fiber internal fiber can bring additional challenges to an internal space, such as space arrangement of a fiber coiling frame, electromagnetic shielding requirements, dust prevention, tolerance control and the like, and the manufacturing difficulty of the photoelectric packaging structure is improved.

In order to solve the above-mentioned problem, the present disclosure proposes a photoelectric packaging structure, and for further explaining the present disclosure, the following embodiments are provided:

referring to fig. 1 and 2, the optoelectronic package structure may include a first substrate 10, an electrical integrated chip 20, and a plurality of first optical integrated chips 30. The electric integrated chip 20 is located on one side surface of the first substrate 10. Each of the first optical integrated chips 30 includes a plurality of vertical cavity surface emitting lasers 301 distributed in a matrix, and the plurality of first optical integrated chips 30 circumferentially surround the electric integrated chip 20, and the vertical cavity surface emitting lasers 301 include light emitting portions 3011 located at the bottom of the substrate. Wherein the vertical cavity surface emitting laser 301 emits an optical signal toward the surface of the first substrate 10 through the light emitting section 3011 based on the signal data of the electric integrated chip 20.

The first substrate 10 may include, but is not limited to, a PCB (Printed Circuit Board ). The PCB may provide physical support for electronic components such as the electrical integrated chip 20 and the first optical integrated chip 30, and by providing structures such as pads, vias, etc. on the PCB, various electronic components may be fixed on the PCB, achieving high density integration, and electrical connection between the individual chips.

The electrically integrated chip 20 may include, but is not limited to, an ASIC (Application SpecificIntegrated Circuit ) chip that may process high-speed electrical signals from a switch or other device. The high-speed electrical signals may include data signals, control signals, and the like, and the ASIC chip can rapidly process and forward the signals, so as to meet the requirements of application scenes such as a data center for high-bandwidth and low-delay communication.

The first photo-integrated chip 30 may include, but is not limited to, a silicon substrate chip. It will be appreciated that a Driver may be included in the first optical integrated chip 30 to enable driving of the vcsels 301. Specifically, the ASIC chip may convert the received high-speed electrical signals into a signal format suitable for processing by the light engine. For example, the high-speed signal of the ASIC chip passes through the Driver that can be input to the first optical integrated chip 30, and the Driver further drives the vertical cavity surface emitting laser 301 to emit light, so as to convert the signal data of the electrical integrated chip 20 into an optical signal for transmission.

Illustratively, a plurality of vertical cavity surface emitting lasers 301 may be circumferentially enclosed around the electrically integrated chip 20 to achieve high density light emitting and receiving functions in a limited space. The integration level of the optical engine can be improved, so that more optical signal processing functions are integrated on one substrate, and the requirements of application scenes such as a data center and the like on high-bandwidth and high-density optical communication are met. In a specific embodiment, the vcsel 301 may be packaged on one side surface of the substrate 10 by COB (Chip on Board) packaging technology, and the COB packaging technology is used to facilitate the heat dissipation function of the package structure.

The light emitting direction of the vcsels 301 is perpendicular to the surface of the first substrate 10, that is, the vcsels 301 may emit light from the top or from the bottom of the substrate.

In this embodiment, the vertical cavity surface emitting laser 301 emits light through the light emitting portion 3011 at the bottom of the substrate, and can directly emit an optical signal onto the surface of the first substrate 10, so as to transmit the optical signal on the surface of the first substrate 10.

In the photoelectric packaging structure of the present embodiment, by disposing the electric integrated chip 20 on one side surface of the first substrate 10 and circumferentially surrounding the electric integrated chip 20 by the plurality of vertical cavity surface emitting lasers 301 in the first optical integrated chip 30, the high-speed electric signal output by the electric integrated chip 20 can be converted into an optical signal by the vertical cavity surface emitting lasers 301 around the electric integrated chip and emitted, so as to realize efficient transmission of information by using the optical signal. Further, the vertical cavity surface emitting laser 301 emits light through the light emitting portion 3011 of the substrate, so that an optical signal can be emitted to the surface of the first substrate 10, the optical signal is transmitted on the surface of the first substrate 10, the optical signal does not need to be transmitted at the tops of the electric integrated chip 20 and the first optical integrated chip 30, and a reflective structure is not required to be arranged, so that heat dissipation can be performed at the tops of the electric integrated chip 20 and the first optical integrated chip 30, the heat dissipation space is increased, the heat dissipation rate is increased, the working temperature of the electric integrated chip 20 and the optical integrated chip is further reduced, and the reliability of the photoelectric packaging structure is improved.

In an embodiment, referring to fig. 1, the first optical integrated chip 30 includes a plurality of first through holes 302, the first through holes 302 expose the light emitting portions 3011 of the vcsels 301, and the first through holes 302 are disposed in one-to-one correspondence with the light emitting portions 3011 of the vcsels 301. Wherein an optical signal emitted from the vertical cavity surface emitting laser 301 is incident to one side surface of the first substrate 10 through the first through hole 302.

Illustratively, the length of the first through hole 302 may be set according to the actual situation, and in this embodiment, without being limited specifically, the aperture of the first through hole 302 may be set according to the light-emitting portion 3011 of the vertical cavity surface emitting laser 301, and the aperture of the first through hole 302 may be greater than or equal to the diameter of the light-emitting portion 3011, so as to expose the light-emitting portion 3011, thereby realizing efficient transmission of the optical signal.

In the optoelectronic package structure of the embodiment of the present application, by disposing the plurality of first through holes 302 in the first optical integrated chip 30, the light emitting portion of the vcsels 301 may be exposed through the first through holes 302, so that the optical signal emitted by the vcsels 301 may be incident on the surface of the first substrate 10 through the first through holes 302, so that the optical signal is transferred on the surface of the first substrate 10. And by adjusting the position and size of the first through hole 302 so that the first through hole 302 completely exposes the light-emitting portion 3011 of the vertical cavity surface emitting laser 301, the laser light emitted from the light-emitting portion 3011 is entirely incident on the surface of the first substrate 10, so that the loss of optical signals can be reduced. The light emitting portions 3011 of the vertical cavity surface emitting laser 301 are arranged in one-to-one correspondence with the first through holes 302, so that light signals emitted by different light emitting portions 3011 can be ensured to be transmitted through different first through holes 302, interference among signals can be reduced, signal integrity is improved, and stability and high efficiency of signal transmission are ensured.

In some embodiments, with continued reference to FIGS. 1 and 2, the optoelectronic package structure may further include a light guide unit 40. The light guiding unit 40 is located on a side surface of the first substrate 10 away from the first optical integrated chip 30, and the light guiding unit 40 is configured to receive the optical signal emitted from the vcsels 301 to the surface of the first substrate 10 and transmit the optical signal to the optical signal output interface along a first direction parallel to the surface of the first substrate 10. Wherein the orthographic projection of the light guiding unit 40 towards the surface of the first substrate 10 covers at least the orthographic projection of the first through hole 302 towards the surface of the first substrate 10.

Illustratively, the light guiding unit 40 is disposed on a side surface of the first substrate 10 away from the first optical integrated chip 30, so that the optical signal emitted by the vcsels 301 may be directly coupled into the light guiding unit 40, and the optical signal is transmitted to the optical signal output interface along a first direction parallel to the surface of the first substrate 10, so that the optical signal is transmitted on the surface of the first substrate 10. And the orthographic projection of the light guiding unit 40 towards the surface of the first substrate 10 at least covers the orthographic projection of the first through hole 302 towards the surface of the first substrate 10, so that the light guiding unit 40 can effectively couple the light signals emitted from the first through hole 302.

In the photoelectric packaging structure of the embodiment of the application, the light guide unit 40 is arranged on the surface of one side, far away from the first optical integrated chip 30, of the first substrate 10, so that laser emitted by the vertical cavity surface emitting laser 301 can be directly coupled, loss and reflection of optical signals in the transmission process can be reduced, the coupling efficiency of the optical signals can be improved, and the quality of the optical signals can be ensured. And the path of the optical signal transmission can be adjusted by adjusting the distance between the light guiding unit 40 and the first through hole 302, thereby reducing loss and interference of the optical signal during transmission. The transmission efficiency of the optical signal can be further improved. Since the optical signal is directly transmitted in the light guide unit 40 above the first substrate 10, there is no need to provide a complicated edge coupling structure, so that a transmission path of the optical signal can be simplified, and heat dissipation of the optoelectronic package structure is facilitated, and reliability of the optoelectronic package structure is improved.

In some embodiments, referring to fig. 1 and 2, the light guiding unit 40 may include a plurality of light guiding coupling subunits 401 and light guiding subunits 402, the light guiding coupling subunits 401 are distributed on the surface of the first substrate 10 away from the integrated circuit chip 20 at intervals, the front projection of the light guiding coupling subunits 401 towards the first substrate 10 at least covers the front projection of the first through holes 302 towards the first substrate 10, the light guiding coupling subunits 401 are disposed in one-to-one correspondence with the first through holes 302, and the light guiding subunits 402 are located on one side surface of the first substrate 10 of the light guiding coupling subunits 401 and extend and are distributed to the light signal output interface along the first direction parallel to the surface of the first substrate 10. Wherein the light guiding sub-unit 402 is located at a side of the light guiding coupling sub-unit 401 remote from the electrical integrated chip 20 and is connected to the light guiding coupling sub-unit 401.

Illustratively, the orthographic projection of the light guide coupling subunit 401 toward the first substrate 10 at least covers the orthographic projection of the first through hole 302 toward the first substrate 10, so that it is ensured that the optical signal emitted by the vcsels 301 can be efficiently coupled into the light guide unit 40, and loss of the optical signal is avoided. The optical waveguide subunit 402 is located on the surface of the first substrate 10, and extends and distributes to the optical signal output interface along the first direction parallel to the surface of the first substrate 10, so that the optical signal coupled to the optical waveguide coupling subunit 401 can be transmitted to the optical signal output interface along the surface of the first substrate 10.

In a preferred embodiment, the light guide coupling sub-unit 401 comprises a waveguide coupler and the material of the light guide sub-unit 402 may comprise a polymeric waveguide material. The waveguide coupler can efficiently couple the optical signal emitted by the vertical cavity surface emitting laser 301 into the polymer waveguide material, and convert the original transmission path of the optical signal so as to transmit the optical signal along the surface of the first substrate 10. And the waveguide coupler can realize optical signal conversion of different modes. For example, the Gaussian mode optical signal from VCSEL 301 is converted into a mode suitable for transmission in a polymer waveguide.

The polymer waveguide material can be coated or grown on the surface or the middle layer of the PCB, so that the polymer waveguide material can realize arbitrary wiring on the PCB, has better flexibility and applicability compared with optical fiber wiring, can avoid the problems of optical fiber winding, tolerance and the like, and simplifies the photoelectric packaging structure. And the polymer waveguide material has good light refraction effect and can reduce the transmission loss of optical signals. The polymer waveguide can also be coated on the flexible board, so that the practicability and applicability of the photoelectric packaging structure can be improved.

In the photoelectric packaging structure in the embodiment of the application, by arranging the light guide coupling subunit 401, the optical signal emitted to the surface of the first substrate 10 by the vertical cavity surface emitting laser 301 can be transmitted along the direction parallel to the surface of the first substrate 10, so as to realize the conversion of the optical signal transmission path. By arranging the optical waveguide subunit 402, the optical signal coupled by the optical waveguide coupling subunit 401 can be transmitted to the optical signal output interface along the surface of the first substrate 10, so as to realize efficient transmission of the optical signal. Therefore, the photoelectric packaging structure provided by the embodiment of the application does not need to additionally provide a reflecting structure to realize the coupling of optical signals, and can realize the transmission of the optical signals to the optical signal output interface on the surface of the first substrate 10, so that the heat dissipation space of the photoelectric packaging structure can be increased, and the reliability of the photoelectric packaging structure is further improved.

In some embodiments, referring to fig. 1 and 2, the first optical integrated chip 30 includes a plurality of second through holes 303 spaced apart from each other, and the second through holes 303 penetrate the first optical integrated chip 30. The photoelectric packaging structure further comprises a conductive unit 50, wherein the conductive unit 50 is positioned on one side surface of the first substrate 10 close to the electric integrated chip 20, and comprises a first conductive subunit 501 and a plurality of second conductive subunits 502, a first end of the first conductive subunit 501 is electrically connected with the electric integrated chip 20, and the first conductive subunits 501 are arranged from the electric integrated chip 20 in an extending manner along the surface parallel to the first substrate 10. The first end of the second conductive subunit 502 is electrically connected to the second end of the first conductive subunit 501, and the second conductive subunit 502 is located in the second via 303 and is electrically connected to the vcsels 301.

Illustratively, the aperture and length of the second through hole 303 may be set according to actual situations, and are not limited in this embodiment. The second through holes 303 may be arranged at intervals along the first direction parallel to the surface of the ground, and of course, in other embodiments, the second through holes may be reasonably arranged according to the requirement.

The conductive unit 50 may be, but not limited to, a metal wire, such as a copper wire. The first conductive sub-units 501 are arranged from the electric integrated chip 20 along the surface parallel to the first substrate 10 in an extending manner, so that electric signals can be transmitted on the surface of the first substrate 10, and further by arranging the second conductive sub-units 502 in the second through holes 303, the electric signals transmitted by the first conductive sub-units 501 can be transmitted to the electrodes of the vertical cavity surface emitting lasers 301 in the first optical integrated chip 30, so that the electric signals from the electric integrated chip 20 to the optical integrated chip can be transmitted.

It will be appreciated that the second end of the second conductive subunit 502 may include a pad (not shown) that may be connected to an electrode of the VCSEL 301 by a metal lead 5021 to make electrical connection. Of course, in other embodiments, any practical way of electrically connecting the second end of the second conductive subunit 502 to the electrode of the VCSEL 301 is also possible.

According to the photoelectric packaging structure provided by the embodiment of the application, the electric signal of the electric integrated chip 20 can be transmitted to the vertical cavity surface emitting laser 301 in the first optical integrated chip 30 on the surface of the first substrate 10 by arranging the conductive unit 50, and the layering transmission of the optical signal and the electric signal can be realized by arranging the second conductive subunit 502 in the first through hole 302 of the first optical integrated chip 30, so that the interference between the signals is avoided, and the transmission efficiency of the signals is improved.

In some embodiments, referring to FIGS. 3 and 4, a second optical integrated chip 60 may also be included. The second optical integrated chip 60 includes a plurality of photodetectors 601 distributed in a matrix, the photodetectors 601 circumferentially surround the integrated chip 20, and the photodetectors 601 are located between the integrated chip 20 and the vertical cavity surface emitting laser 301, and the photodetectors 601 include light entrance portions 6011 located near the surface of the first substrate 10.

Illustratively, the second optical integrated chip 60 may include, but is not limited to, a silicon substrate chip. It will be appreciated that the second optical integrated chip 60 may include a transimpedance amplifier 70 (TRANSIMPEDANCE AMPLIFIER, TIA), and the TIA may convert the photocurrent signal output by the photodetector 601 into a voltage signal, and transmit the voltage signal to the electrical integrated chip 20 through the conductive unit 50.

The photodetector 601 may include, but is not limited to, a photodiode, although in other embodiments the photodetector 601 may be other electrical devices that convert optical signals into electrical signals. The light inlet portion 6011 of the photo detector 601 is located near the surface of the first substrate 10, it can be understood that the optical signal on the surface of the first substrate 10 can be incident to the photo detector 601 through the light inlet portion 6011 of the photo detector 601, and further the optical signal is converted into an electrical signal by the photo detector 601 and transmitted to the electrical integrated chip 20, so as to realize signal conversion and transmission.

In the photoelectric packaging structure in the embodiment of the application, by arranging the photoelectric detector 601, the optical signal can be converted into the electric signal, so that the received photoelectric signal is converted into the electric signal and transmitted to the electric integrated chip 20, and data transmission between the electric integrated chip 20 and other devices is completed. And the light inlet portion 6011 of the photodetector 601 is disposed close to one side surface of the first substrate 10, so that the optical signal can be received through the surface of the first substrate 10, and then the heat can be dissipated above the electric integrated chip 20 and the second optical integrated chip 60, so that the heat dissipation space and efficiency are improved, the working temperature of the electric integrated chip 20 is reduced, and the reliability of the photoelectric packaging structure is improved.

In some embodiments, referring to fig. 3 and 4, the second optical integrated chip 60 includes a plurality of third through holes 602, the third through holes 602 expose the light inlet portions 6011 of the photodetectors 601, and the third through holes 602 are disposed in one-to-one correspondence with the light inlet portions 6011 of the photodetectors 601, wherein the optical signals on the surface of the first substrate 10 are incident to the light inlet portions 6011 through the third through holes 602.

The length of the through hole of the third through hole 602 may be set according to the actual situation, and in this embodiment, without specific limitation, the aperture of the third through hole 602 may be set according to the light inlet 6011 of the photodetector 601, and the aperture of the third through hole 602 may be greater than or equal to the diameter of the light inlet 6011, so as to expose the light inlet 6011, thereby realizing effective transmission of the optical signal.

In the photoelectric packaging structure of the embodiment of the present application, by providing the plurality of third through holes 602 in the second optical integrated chip 60, the light inlet 6011 of the photodetector 601 can be exposed through the third through holes 602, and thus the optical signal on the surface of the first substrate 10 can be incident to the light inlet 6011 of the photodetector 601 through the third through holes 602, so as to realize the reception of the optical signal. And the position and the size of the third through hole 602 can be adjusted, so that the third through hole 602 completely exposes the light inlet portion 6011 of the photodetector 601, and the optical signals on the surface of the first substrate 10 are all incident on the light inlet portion 6011 of the photodetector 601, thereby reducing the loss of the optical signals. The light inlet portions 6011 of the photoelectric detector 601 are arranged in one-to-one correspondence with the third through holes 602, so that light signals incident by different light inlet portions 6011 can be transmitted through different third through holes 602, interference among the signals can be reduced, signal integrity is improved, and stability and high efficiency of signal transmission are ensured.

In some embodiments, referring to fig. 3 and 4, the optoelectronic package structure may further include a light guide coupling subunit 401, and it is understood that the light guide coupling subunit 401 in this example may be the same light guide coupling subunit as the light guide coupling subunit mentioned in the above embodiment. The light guide coupling subunits 401 are distributed on one side surface of the first substrate 10 at intervals, and the third through holes 602 expose the light guide coupling subunits 401 and are arranged in one-to-one correspondence with the light guide coupling subunits 401.

Illustratively, the third through hole 602 exposes the photoconductive coupling subunit 401, and after the optical signal on the surface of the first substrate 10 is converted by photoconductive coupling, the optical signal is transmitted to the light inlet 6011 of the photodetector 601 through the third through hole 602, so as to realize conversion of the optical signal transmission path.

In the photoelectric packaging structure in the embodiment of the application, the light guide coupling subunit 401 is exposed through the third through hole 602, and the third through hole 602 can be used as an optical signal transmission path between the light guide coupling subunit 401 and the photoelectric detector 601. The optical signals on the surface of the first substrate 10 are transmitted to the photoelectric detector 601, and the optical coupling subunit 401 and the third through holes 602 are arranged in one-to-one correspondence, so that the optical signals can be transmitted between the optical coupling subunit 401 and the photoelectric detector 601 in one-to-one correspondence, interference between the signals can be reduced, and the transmission quality of the signals is improved.

In some embodiments, referring to fig. 3 and 4, the second optical integrated chip 60 includes a plurality of fourth through holes 603 distributed at intervals, and the fourth through holes 603 penetrate through the second optical integrated chip 60. The second conductive subunit 502 is disposed in the fourth through hole 603, and the photodetector 601 is electrically connected to the second end of the second conductive subunit 502.

Illustratively, the aperture and length of the fourth through hole 603 may be set according to actual situations, and are not limited in this embodiment. The fourth through holes 603 may be arranged at intervals along the first direction parallel to the surface of the ground, and of course, in other embodiments, the arrangement may be appropriately set according to the requirement.

According to the photoelectric packaging structure in the embodiment of the application, the fourth through hole 603 is arranged, the second conductive subunit 502 is arranged in the fourth through hole 603, so that the electric signal converted by the photoelectric detector 601 can be transmitted to the electric integrated chip 20 through the second conductive subunit 502, and the second conductive subunit 502 is arranged in the fourth through hole 603 in the second optical integrated chip 60, the layered transmission of the electric signal can be realized, the interference between the signals is avoided, and the accuracy and the reliability of the signal transmission are improved.

In some embodiments, referring to fig. 1 and 3, the optoelectronic package structure may further include a second substrate 01. The second substrate 01 is located on one side surface of the first substrate 10, wherein the electric integrated chip 20, the first optical integrated chip 30 and the second optical integrated chip 60 are located on one side surface of the second substrate 01 away from the first substrate 10.

Illustratively, the second substrate 01 may include, but is not limited to, a glass first substrate 10, and it is understood that the glass first substrate 10 is a transparent first substrate 10, so that the optical signal emitted by the vertical cavity surface emitting laser 301 may be transmitted to the bottom of the first substrate 10 through the glass first substrate 10, so as to further perform optical signal transmission at the bottom of the second substrate 01. Of course, the optical signal at the bottom of the second substrate 01 may be transmitted to the light inlet portion 6011 of the photodetector 601 to be converted into an electrical signal.

In a preferred embodiment, the second substrate 01 may include a lens 011, where the lens 011 penetrates through the second substrate 01, and the bottom openings of the first through hole 302 and the third through hole 602 expose the lens 011, and the lenses 011 are disposed in a one-to-one correspondence with the light guide coupling sub-units 401. Lens 011 can focus a focused optical signal, focusing a divergent optical signal into a narrower beam, to more completely inject the optical signal into the light guide coupling subunit 401 through the first through-hole 302. Of course, the optical signal emitted from the optical coupling subunit 401 may be more completely incident on the photodetector 601 through the third through hole 602.

Note that, in the present embodiment, the conductive unit 50 may be located on a surface of the second substrate 01 away from the first substrate.

In the optoelectronic package structure according to the embodiment of the present application, the second substrate 01 is provided, so that the electrical integrated chip 20, the first optical integrated chip 30 and the second optical integrated chip 60 are disposed on a surface of the second substrate 01, which is far from the first substrate 10. CPO (Co-packaged Optics, photoelectric Co-packaging structure) can be realized, and then the electrical interconnection length between the electric integrated chip 20 and the optical integrated chip can be shortened, the power consumption of the photoelectric packaging structure can be reduced, the delay of signal transmission can be reduced, and the interference of external environment on the optical signal transmission can be reduced. In addition, the photoelectric co-packaging structure can electrically integrate the interconnection density between the chip 20 and the optical integrated chip, and can transmit more data in the same physical space, thereby meeting the requirement of a data center on high bandwidth.

In another embodiment, referring to fig. 2 and 4, the optoelectronic package structure may further include a second substrate 01A and a third substrate 01B. The second substrate 01A is located on a side surface of the first substrate 10, and the electric integrated chip 20 is located on a side surface of the second substrate 01A away from the first substrate 10. The third substrate 01B is located on a side surface of the first substrate 10, and the first and second integrated optical chips 30 and 60 are located on a side surface of the third substrate 01B remote from the first substrate 10.

Illustratively, the second substrate 01A and the third substrate 01B may be glass first substrates 10, and it is understood that the glass first substrates 10 are transparent first substrates 10, so that the optical signals emitted by the vertical cavity surface emitting lasers 301 may be transmitted to the bottom of the first substrates 10 through the glass first substrates 10, so as to further perform optical signal transmission at the bottom of the third substrate 01B. Of course, the optical signal at the bottom of the third substrate 01B may be transmitted to the light inlet portion 6011 of the photodetector 601 to be converted into an electrical signal.

In a preferred embodiment, the third substrate 01B may include a lens 011, where the lens 011 penetrates through the third substrate 01B, and the bottom openings of the first through hole 302 and the third through hole 602 expose the lens 011, and the lenses 011 are disposed in a one-to-one correspondence with the light guide coupling sub-units 401. Lens 011 can focus the optical signal, and can focus the divergent optical signal into a narrower beam, to more completely inject the optical signal into the optical coupling subunit 401 through the first through-hole 302. Of course, the optical signal emitted from the optical coupling subunit 401 may be more completely incident on the photodetector 601 through the third through hole 602.

In this embodiment, the conductive unit 50 may penetrate through the second substrate 01A and the third substrate 01B and be located on one side surface of the first substrate 10.

In the optoelectronic package structure of the embodiment of the present application, the second substrate 01A and the third substrate 01B are disposed, so that the electrical integrated chip 20 is disposed on a surface of the second substrate 01A, which is far away from the first substrate 10, and the first optical integrated chip 30 and the second optical integrated chip 60 are disposed on a surface of the third substrate 01B, which is far away from the first substrate 10. NPO (NEAR PACKAGED Optics, near packaging Optics) can be realized, the NPO can reduce the complex structure on the optical signal transmission path, reduce the power consumption of the system, and only replace and maintain the optical integrated chip under the condition that the first optical integrated chip 30 and the second optical integrated chip 60 fail, so that the normal operation of the electric integrated chip 20 is not affected, and the maintenance cost of the packaging structure is reduced.

The foregoing has described certain embodiments of the present disclosure. Other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims can be performed in a different order than in the embodiments and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This disclosure is intended to cover any adaptations, uses, or adaptations of the disclosure following the general principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.

It is to be understood that the present disclosure is not limited to the precise arrangements and instrumentalities shown in the drawings, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

The foregoing description of the preferred embodiments of the present disclosure is not intended to limit the disclosure, but rather to cover all modifications, equivalents, improvements and alternatives falling within the spirit and principles of the present disclosure.

Claims (11)

1. An optoelectronic package structure, comprising:

A first substrate;

an electrical integrated chip located on one side surface of the first substrate;

The array substrate comprises a plurality of first optical integrated chips, wherein each first optical integrated chip comprises a plurality of vertical cavity surface emitting lasers distributed in a matrix, the plurality of first optical integrated chips circumferentially surround the electric integrated chip, and each vertical cavity surface emitting laser comprises a light emitting part positioned at the bottom of the substrate;

Wherein the vertical cavity surface emitting laser emits an optical signal toward a side surface of the first substrate through the light emitting portion based on signal data of the electric integrated chip.

2. The optoelectronic package structure of claim 1, wherein the first optical integrated chip comprises a plurality of first through holes, the first through holes expose light emitting portions of the vcsels, and the first through holes are arranged in one-to-one correspondence with the light emitting portions of the vcsels;

wherein, the optical signal emitted by the vertical cavity surface emitting laser is incident to one side surface of the first substrate through the first through hole.

3. The optoelectronic package assembly as set forth in claim 2, further comprising:

The light guide unit is positioned on one side surface of the first substrate, and is used for receiving the optical signal emitted by the vertical cavity surface emitting laser to one side surface of the first substrate and transmitting the optical signal to the optical signal output interface along a first direction parallel to the first substrate surface;

wherein, the orthographic projection of the light guide unit towards the first substrate surface at least covers the orthographic projection of the first through hole towards the first substrate surface.

4. The optoelectronic package assembly as set forth in claim 3 wherein the light guide unit includes a plurality of light guide coupling subunits and light guide subunits, the light guide coupling subunits being spaced apart from one side surface of the first substrate, the orthographic projection of the light guide coupling subunits toward the first substrate covering at least the orthographic projection of the first through holes toward the first substrate, the light guide coupling subunits being disposed in one-to-one correspondence with the first through holes, the light guide subunits being disposed on one side surface of the first substrate and extending to the optical signal output interface in a first direction parallel to the first substrate surface,

The light guide subunit is positioned on one side of the light guide coupling subunit away from the electric integrated chip and is connected with the light guide coupling subunit.

5. The optoelectronic package assembly as recited in claim 4, wherein the light guide coupling sub-unit comprises a waveguide coupler and the material of the light guide sub-unit comprises a polymeric waveguide material.

6. The optoelectronic package structure of claim 1, wherein the first optical integrated chip comprises a plurality of second through holes spaced apart from each other, the second through holes extending through the first optical integrated chip;

The photoelectric packaging structure also comprises a conductive unit, a first electrode and a second electrode, wherein the conductive unit is positioned on one side surface of the first substrate, which is close to the electric integrated chip, and comprises a first conductive subunit and a plurality of second conductive subunits, the first end of the first conductive subunit is electrically connected with the electric integrated chip, and the first conductive subunit extends from the electric integrated chip along the surface parallel to the first substrate;

the first end of the second conductive subunit is electrically connected with the second end of the first conductive subunit, and the second conductive subunit is positioned in the second through hole and is electrically connected with the vertical cavity surface emitting laser.

7. The optoelectronic package assembly of claim 1 further comprising a second integrated optical chip including a plurality of photodetectors disposed in a matrix, the plurality of photodetectors circumferentially surrounding the integrated optical chip and located between the integrated optical chip and the vertical cavity surface emitting laser, the photodetectors including light inlets located proximate to the surface of the first substrate.

8. The optoelectronic package assembly as set forth in claim 7, wherein,

The second light integration chip comprises a plurality of third through holes, the third through holes expose the light inlet parts of the photoelectric detectors, the third through holes are arranged in one-to-one correspondence with the light inlet parts of the photoelectric detectors,

The optical signal on the surface of the first substrate is incident to the light inlet part through the third through hole.

9. The optoelectronic package assembly of claim 8, further comprising light guide coupling subunits, wherein the light guide coupling subunits are spaced apart from one side surface of the first substrate, and the third through holes expose the light guide coupling subunits and are disposed in one-to-one correspondence with the light guide coupling subunits.

10. The optoelectronic package structure of any one of claims 6-9, wherein the second optical integrated chip includes a plurality of fourth through holes distributed at intervals, the fourth through holes penetrating the second optical integrated chip;

the second conductive subunit is located in the fourth through hole, and the photodetector is electrically connected with the second end of the second conductive subunit.

11. The optoelectronic package assembly as set forth in any one of claims 1-7, further comprising:

A second substrate disposed on a side surface of the first substrate, wherein the electrical integrated chip, the first optical integrated chip, and the second optical integrated chip are disposed on a side surface of the second substrate away from the first substrate, or,

The second substrate is positioned on one side surface of the first substrate, and the electric integrated chip is positioned on one side surface of the second substrate far away from the first substrate;

The third substrate is positioned on one side surface of the first substrate, and the first optical integrated chip and the second optical integrated chip are positioned on one side surface of the third substrate far away from the first substrate.