CN204044842U - A kind of Embedded semiconductor fingerprint sensor - Google Patents
A kind of Embedded semiconductor fingerprint sensor Download PDFInfo
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- CN204044842U CN204044842U CN201420489143.9U CN201420489143U CN204044842U CN 204044842 U CN204044842 U CN 204044842U CN 201420489143 U CN201420489143 U CN 201420489143U CN 204044842 U CN204044842 U CN 204044842U
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- Image Input (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
The utility model is applicable to sensor field; provide a kind of Embedded semiconductor fingerprint sensor; this semiconductor fingerprint sensor comprises substrate; be located at the sensor die in the groove of described substrate; described sensor tube wicking surface is provided with sensor pixel array; be covered in the protective finish of described sensor tube wicking surface; be printed on the metal edge strip in described substrate front side fluting face and connect pad; described connection pad connects the pin of described sensor die by connecting wire, described pin, connection pad and the encapsulation of connection wire are with in note seal structure.By arranging metal edge strip, effectively avoiding electrostatic to the grievous injury of tube core, improve antistatic intensity, adopt conventional encapsulation technology, reduce packaging technology, reduce manufacturing cost.
Description
Technical field
The utility model belongs to sensor field, particularly relates to a kind of Embedded semiconductor fingerprint sensor.
Background technology
In recent years along with the development of fingerprint identification technology, fingerprint recognition system is applied in daily life more and more, such as fingerprint identification entrance guard system, fingerprint gate lock, fingerprint safe cabinet etc.; And on exit and entry control place, airport and become common to the object of the identity of the identifiers such as personal device such as notebook computer, panel computer, smart mobile phone, individual PDA equipment, fingerprint USBKey.
Fingerprint sensor presses sensing principle, i.e. fingerprint imaging principle and technology, is divided into optical fingerprint sensor, semicoductor capacitor sensor, semiconductor heat dependent sensor, semiconductor pressure sensor, ultrasonic sensor and radio frequency sensor; Strip fingerprint sensor and rectangle fingerprint sensor can be divided into again by face shaping.
The capacitive fingerprint sensing device of typical based semiconductor technique comprises the tube core of silicon material, and its front is formed with sensor array of acquisition units, driving circuit and sensing circuit.The common principle of operation of sensor: integrated about 100000 capacitance type sensors (outer layer insulation) of sensor array of acquisition units, sensor array every bit is a metal electrode, is equivalent to capacitor anode; When finger is placed on above, skin composition another pole of electric capacity, sensitive face forms two interpolar dielectric layers.Capacitance changes relative to the distance of sensor array with ridge (near) and paddy (far away).The fingerprint of the mankind is made up of closely adjacent concave convex texture, by utilizing canonical reference discharge current on each pixel, the lines situation of fingerprint just can be detected.Each pixel is first pre-charged to a certain reference voltage, is then discharged by reference current.The proportionate relationship that on capacitor anode, the rate of change of voltage becomes below with the electric capacity on it: ref=C × dv/dt pixel (electric capacity is high) be under the projection of fingerprint is discharged comparatively slow, and pixel (electric capacity the is low) electric discharge be under the recess of fingerprint is very fast.This different discharge rate keeps (S/H) electric circuit inspection by sampling and converts one 8 outputs to, and this detection method has higher susceptibility to fingerprint projection and indentation, and can form extraordinary original fingerprint image.After encapsulation, sensor cell array is out exposed, for user's finger contacts; Or covering protection material and finger contact on it, thus protection sensor is not by physics and environmental damage, wearing and tearing etc.
Semiconductor element has usually in its surface by sensor array of acquisition units that photoetching (or other modes) is formed.Sensor die is usually quite little, and its contact pad is also little accordingly, and supplementary structure thus must be adopted to realize the encapsulation of tube core and assembly, to realize the electrical connection between printed circuit board (PCB) (PCB).Such supplementary structure comprises lead frame, chip carrier etc.Such supplementary structure comprises lead frame, chip carrier etc.In common semiconductor packaging technology, die attachment, to lead frame, realizes the interconnection between the small size pad of tube core and large scale lead frame by tiny connection wire.Connect wire and miscellaneous part to protect, tube core, lead frame and connection wire are wrapped in encapsulating material usually.Be put in mould by the tube core and lead frame that are connected to wire, in mould, inject encapsulating material, and encapsulating material is hardened and realizes.
For solving the damage that electrostatic breakdown causes sensor.A kind of preparation method is the non-fingerprint collecting district of the die surfaces in silicon material, the metal conducting layer of the golden material adopting craft of gilding making one very thin, the metal level shown by tube core by silicon through hole is again connected on the static drainage welding pad of tube core, and this static drainage welding pad is soldered to the system earth end on printed circuit board again.When finger is near sensor, the electrostatic on finger is released to systematically through above-mentioned conductive path by the metal of sensor surface.The biggest problem of this preparation method is craft of gilding, because of introduce metallic element gold and the semiconductor technology of standard incompatible, can production manufacturability very poor, yield is very low, and production cost is very high.
Utility model content
The utility model provides a kind of Embedded semiconductor fingerprint sensor, be intended to solve manufacturing cost high, packaging technology is complicated, the problem of antistatic difference.
The utility model realizes like this; a kind of Embedded semiconductor fingerprint sensor; this semiconductor fingerprint sensor comprises substrate; be located at the sensor die in the groove of described substrate; described sensor tube wicking surface is provided with sensor pixel array; be covered in the protective finish of described sensor tube wicking surface; be printed on the metal edge strip in described substrate front side fluting face and connect pad; described connection pad connects the pin of described sensor die by connecting wire, described pin, connection pad and the encapsulation of connection wire are with in note seal structure.
Further technical scheme of the present utility model is: described semiconductor fingerprint sensor also comprises welding mechanism, and described welding mechanism is located at described substrate bottom surface, and described substrate connects printed circuit board by described welding mechanism.
Further technical scheme of the present utility model is: the rectangular structure of described sensor die, and side, described sensor die front arranges pin.
Further technical scheme of the present utility model is: described welding mechanism is plug connector.
Further technical scheme of the present utility model is: into strips, both sides, described sensor die front arrange pin to described sensor die.
Further technical scheme of the present utility model is: described welding mechanism is terminal pad grid array or ball grid array or plug or socket.
Further technical scheme of the present utility model is: described sensor die is lower than the fluting face of described substrate.
Further technical scheme of the present utility model is: described substrate adopts resin, plastics or pottery to make.
Further technical scheme of the present utility model is: described protective finish adopts inorganic coating or organic polymer; Described inorganic coating adopts silicon nitride or silit or unformed adamas; Described organic polymer is polyimide or teflon.
Further technical scheme of the present utility model is: described note seal structure adopts epoxy resin or plastics to make.
The beneficial effects of the utility model are: by arranging metal edge strip, effectively avoid electrostatic to the grievous injury of tube core, improve antistatic intensity, adopt conventional encapsulation technology, reduce packaging technology, reduce manufacturing cost.
Accompanying drawing explanation
Fig. 1 is the partial cutaway perspective view of Embedded semiconductor fingerprint sensor first embodiment that the utility model embodiment provides;
Fig. 2 is the right section schematic diagram of the Embedded semiconductor fingerprint sensor first embodiment rectangular sensor that the utility model embodiment provides;
Fig. 3 is the side diagrammatic cross-section of the Embedded semiconductor fingerprint sensor first embodiment rectangular sensor that the utility model embodiment provides;
Fig. 4 is the schematic rear view of the Embedded semiconductor fingerprint sensor first embodiment rectangular sensor that the utility model embodiment provides;
Fig. 5 is the partial cutaway perspective view of the Embedded semiconductor fingerprint sensor second embodiment strip sensor that the utility model embodiment provides;
Fig. 6 is the side diagrammatic cross-section of the Embedded semiconductor fingerprint sensor second embodiment strip sensor that the utility model embodiment provides;
Fig. 7 is the schematic rear view that Embedded semiconductor fingerprint sensor second embodiment strip sensor that the utility model embodiment provides has grid array terminal pad;
Fig. 8 is the schematic rear view that Embedded semiconductor fingerprint sensor second embodiment strip sensor that the utility model embodiment provides has ball grid array;
Fig. 9 is the side schematic view of the Embedded semiconductor fingerprint sensor second embodiment strip sensor module ball grid array that the utility model embodiment provides.
Embodiment
Reference numeral: 100-rectangular sensor 101-substrate 101a-groove 102-sensor die 102a-pel array 102b-pin one 03-metal edge strip 104-connects pad 105-plug connector 200-strip sensor 205-terminal pad grid array 206-ball grid array 300-and points 301-connection wire 302-note seal structure 303-protective finish
Fig. 1-9 shows the Embedded semiconductor fingerprint sensor that the utility model provides, this semiconductor fingerprint sensor comprises substrate 101, be located at the sensor die 102 in the groove 101a of described substrate 101, described sensor die 102 surface is provided with sensor pixel array 102a, be covered in the protective finish 303 on described sensor die 102 surface, be printed on the metal edge strip 103 in fluting face, described substrate 101 front and connect pad 104, described connection pad 104 connects the pin one 02b of described sensor die by connecting wire 301, described pin one 02b, connect pad 104 and connect wire 301 and be packaged in note seal structure 302.By arranging metal edge strip 103, effectively avoiding electrostatic to the grievous injury of tube core, improve antistatic intensity, adopt conventional encapsulation technology, reduce packaging technology, reduce manufacturing cost.
Described semiconductor fingerprint sensor also comprises welding mechanism, and described welding mechanism is located at described substrate 101 bottom surface, and described substrate 101 connects printed circuit board by described welding mechanism.
The rectangular structure of described sensor die 102, side, described sensor die 102 front arranges pin one 02b.
Described welding mechanism is plug connector 105.
Described sensor die 102 is in strip, and both sides, described sensor die 102 front arrange pin one 02b.
Described welding mechanism is terminal pad grid array 205 or ball grid array 206 or plug or socket.
Described sensor die 102 is lower than the fluting face of described substrate 101.
Described substrate 101 adopts resin, plastics or pottery to make.
Described protective finish 303 adopts inorganic coating or organic polymer; Described inorganic coating adopts silicon nitride or silit or unformed adamas; Described organic polymer is polyimide or teflon.
Described note seal structure is adopted 302 and is made with epoxy resin or plastics.
Described connection wire 301 adopts the metal material such as tens microns of direct aluminium or gold to make.
The length and width size of described groove 101a is greater than the length and width size of described sensor die 102.
Embodiment one
Referring to figs. 1 to Fig. 4, wherein Fig. 1 illustrates the partial cutaway perspective view of the rectangular sensor 100 embedding and be printed on one or more metal edge strips 103 structure on substrate 101 according to the substrate 101 of the first embodiment.Rectangular sensor 100 comprises rectangular substrate 101, it adopts the insulating material such as resin, plastics or pottery to make, have and be formed at its front or the back side and the interconnecting line (not shown) be likely in its each layer, the front of described rectangular substrate 101 has groove 101a, its groove 101a length and width size is slightly larger than rectangular sensor tube core 102, and groove depth is a little more than the height of tube core 102.Sensor die 102 is embedded into sensor die 102 fixed area bottom substrate 101 groove 101a, and makes the front of sensor die 102 in the horizontal plane a little less than the fluting face of substrate 101.Sensor die 102 normally has the silicon-based semiconductor being formed at one or more layers, and layer comprises as integrated circuit (IC)-components and interconnection line, through holes such as transistor, electric capacity, resistance, and described device is formed by photoetching or other semiconductor fabrication process.Specifically, tube sensor core 102 has image storage unit (not shown) formed thereon, image reading circuit (not shown) and sensor pixel array 102a, and pel array 102a is the two-dimensional array of pixel.By the bonding agent between the back side of sensor die 102 and the bottom of substrate recess 101a, sensor die 102 is physically connected to substrate 101 groove 101a.By connecting wire 301 pin (PAD) 102b of narrower side, sensor die 102 front is electrically connected to the connection pad 104 in wherein side fluting face, substrate 101 front, described connection wire 301 adopts the metal materials such as the aluminium of tens micron diameters or gold.
The fluting face of substrate 101 is printed with one or more metal edge strip 103, and described metal edge strip 103 adopts the metal materials such as the copper of conduction, aluminium or gold to make.Metal edge strip 103 is by the (not shown) that is formed at substrate 101 front or the back side and the interconnecting line (not shown) be likely in its each layer is connected with one or more ground pin of the connector 105 at substrate 101 back side, connector 105 is for the electrical connection between substrate 101 and printed circuit board, one or more ground pin of described connector 105 is connected with the ground level of printed circuit board, forms ESD electrostatic leakage path thus.Such as when finger 300 presses the two-dimensional array 102a in rectangular sensor tube core 102 front time, because sensor die 102 is in the horizontal plane a little less than the fluting face of substrate 101, the one or more conducting metal edge strip 103 that the fluting face that finger 300 understands first contact substrate 101 is printed, its electrostatic carried to be released to ground by above-mentioned ESD electrostatic leakage path, effectively avoids the sensor die 102 of electrostatic to silicon material to cause serious harm.
The pin one 02b of narrower side, sensor die 102 front and substrate 101 front wherein side fluting face connection pad 104 and be connected wire 301 and be all wrapped in note seal structure 302; make the front of sensor die 102 (especially sensor pixel array 102a) out exposed; it covers one deck protective finish 303; described protective finish 303 material can use inorganic coating; such as silicon nitride, silit, alumina silicate or amorphous diamond; greatly can strengthen wearing quality, especially for abrasive grains.Also other organic polymer materials can be adopted, such as polyimide (Polyimide (KaptonTM)) or teflon (PTFF (TeflonTM)), have good hydrophobicity, corrosion-resistant, acid and alkali-resistance, the good characteristic such as wear-resisting.
The material forming note seal structure 302 adopts the insulating material such as epoxy resin or plastics.Note envelope can be realized by injecting glue or casting process, and various integrated circuit also can be adopted to be molded one of technology to be formed note seal structure 302.Note seal structure 302 wrap the pin one 02b of sensor die 102, substrate 101 connection pad 104, connect wire 301, and the space making note closure material fill up substrate 101 groove 101a surrounding makes together with substrate 101 fits tightly with sensor die 102.Note seal structure 302 can be protected the pin one 02b of sensor die 102, the connection pad 104 of substrate 101 and be connected wire 301 not by machinery, electricity and environmental damage.
The back side of substrate 101 is provided with connector 105, for being electrically connected between substrate 101 and printed circuit board, as the backside interconnect of the miscellaneous part installation component of a part for resulting device structure, thus allow the electrical interconnection of rectangular sensor 100 in another electric system.Thereby is achieved the complete rectangular sensor 100 for fingerprint collecting embedding and be printed on one or more metal edge strips 103 structure on substrate 101 and sensor die 102 based on substrate 101.
Embodiment two
With reference to figure 5 to Fig. 9, wherein Fig. 5 illustrates the partial cutaway perspective view of the strip sensor 200 embedding and be printed on one or more metal edge strips 103 structure on substrate 101 according to the substrate 101 of the second embodiment.Strip sensor 200 comprises the substrate 101 of strip, it adopts the insulating material such as resin, plastics or pottery, have and be formed at its front or the back side and the interconnecting line (not shown) be likely in its each layer, the front of described strip substrate 101 has groove 101a, its groove 101a length and width size is slightly larger than strip sensor die 202, and groove depth is a little more than the height of sensor die 202.Sensor die 102 is embedded into sensor die 102 fixed area bottom substrate recess 101a, and makes the front of sensor die 102 in the horizontal plane a little less than the fluting face of substrate 101.Sensor die 102 normally has the silicon-based semiconductor being formed at one or more layers, and layer comprises as integrated circuit (IC)-components and interconnection line, through holes such as transistor, electric capacity, resistance, and device is formed by photoetching or other semiconductor fabrication process.Specifically, sensor die 102 has image storage unit (not shown) formed thereon, image reading circuit (not shown) and sensor pixel array 102a, and pel array 102a is the two-dimensional array of pixel.By the bonding agent between the back side of sensor die 102 and the bottom of substrate recess 101a, tube core 202 is physically connected to substrate recess 201a.By connecting wire 301 the pin one 02b of narrower both sides, sensor die 102 front is electrically connected to the connection pad 104 in wherein both sides fluting face, substrate 101 front, described connection wire 301 adopts the metal materials such as the aluminium of tens micron diameters or gold.
The fluting face of substrate 101 is printed with one or more metal edge strip 103, and described metal edge strip 103 adopts the metal materials such as the copper of conduction, aluminium or gold to make.Metal edge strip 103 to be connected (not shown) by being formed at substrate 101 front or the back side and being likely in one or more ground pin that interconnecting line (not shown) in its each layer and substrate 101 Runners type both sides are evenly distributed with terminal pad grid array 205 or ball grid array 206, terminal pad grid array 205 or ball grid array 206 are for the electrical connection between substrate 101 and printed circuit board, one or more ground pin of described terminal pad grid array 205 or ball grid array 206 is connected with the ground level of printed circuit board, form ESD electrostatic leakage path thus.Such as when finger 300 slips over the two-dimensional array 102a in strip sensor die 102 front time, because sensor die 102 is in the horizontal plane a little less than the fluting face of substrate 101, the one or more conducting metal edge strip 103 that the fluting face that finger 300 understands first contact substrate 101 is printed, its electrostatic carried to be released to ground by above-mentioned ESD electrostatic leakage path, effectively avoids the sensor die 102 of electrostatic to silicon material to cause serious harm.
The pin one 02b of narrower both sides, sensor die 102 front and substrate 101 front wherein both sides fluting face connection pad 104 and be connected wire 301 and be all wrapped in note seal structure 302; make the front of sensor die 102 (especially sensor pixel array 102a) out exposed; it covers one deck protective finish 303; described protective finish 303 material can use inorganic coating; such as silicon nitride, silit, alumina silicate or amorphous diamond; greatly can strengthen wearing quality, especially for abrasive grains.Also can adopt other organic polymer materials, such as polyimide or teflon, there is good hydrophobicity, corrosion-resistant, the good characteristic such as acid and alkali-resistance, wearing quality provide physical protection.
The material forming note seal structure 302 adopts the insulating material such as epoxy resin or plastics.Note envelope can be realized by injecting glue or casting process, and various integrated circuit also can be adopted to be molded one of technology to be formed note seal structure 302.Note seal structure 302 wrap the pin one 02b of sensor die 102, substrate 101 connection pad 104, connect wire 301, and the space making note closure material fill up substrate recess 101a surrounding makes together with substrate 101 fits tightly with sensor die 102.Note seal structure 302 can be protected the pin one 02b of sensor die 102, the pad 104 of substrate 101 and be connected wire 301 not by machinery, electricity and environmental damage.
The Runners type both sides of substrate 101 are evenly distributed with terminal pad grid array 205 or ball grid array 206 or plug or socket, for being electrically connected between substrate 101 and printed circuit board, as the backside interconnect of the miscellaneous part installation component of a part for resulting device structure, thus allow the electrical interconnection of strip sensor 200 in another electric system.Thereby is achieved the complete one or more metal edge strip structure embedding based on substrate and be printed on substrate and the strip sensor 200 for fingerprint collecting of sensor die.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection domain of the present utility model.
Claims (10)
1. an Embedded semiconductor fingerprint sensor; it is characterized in that; this semiconductor fingerprint sensor comprises substrate; be located at the sensor die in the groove of described substrate; described sensor tube wicking surface is provided with sensor pixel array; be covered in the protective finish of described sensor tube wicking surface; be printed on the metal edge strip in described substrate front side fluting face and connect pad; described connection pad connects the pin of described sensor die by connecting wire, described pin, connection pad and the encapsulation of connection wire are with in note seal structure.
2. semiconductor fingerprint sensor according to claim 1, is characterized in that, described semiconductor fingerprint sensor also comprises welding mechanism, and described welding mechanism is located at described substrate bottom surface, and described substrate connects printed circuit board by described welding mechanism.
3. semiconductor fingerprint sensor according to claim 2, described sensor die rectangular in cross-section, side, described sensor die front arranges pin.
4. semiconductor fingerprint sensor according to claim 3, is characterized in that, described welding mechanism is plug connector.
5. semiconductor fingerprint sensor according to claim 2, is characterized in that, described sensor die is strip, and both sides, described sensor die front arrange pin.
6. semiconductor fingerprint sensor according to claim 5, is characterized in that, described welding mechanism adopts terminal pad grid array or ball grid array or plug or socket.
7. the semiconductor fingerprint sensor according to claim 4 or 6, described sensor die is lower than the fluting face of described substrate.
8. semiconductor fingerprint sensor according to claim 7, is characterized in that, described substrate adopts resin, plastics or pottery to make.
9. semiconductor fingerprint sensor according to claim 8, is characterized in that, described protective finish adopts inorganic coating or organic polymer; Described inorganic coating adopts silicon nitride or silit or unformed adamas; Described organic polymer is polyimide or teflon.
10. semiconductor fingerprint sensor according to claim 9, is characterized in that, described note seal structure adopts epoxy resin or plastics to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420489143.9U CN204044842U (en) | 2014-08-27 | 2014-08-27 | A kind of Embedded semiconductor fingerprint sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420489143.9U CN204044842U (en) | 2014-08-27 | 2014-08-27 | A kind of Embedded semiconductor fingerprint sensor |
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| Publication Number | Publication Date |
|---|---|
| CN204044842U true CN204044842U (en) | 2014-12-24 |
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| CN201420489143.9U Expired - Lifetime CN204044842U (en) | 2014-08-27 | 2014-08-27 | A kind of Embedded semiconductor fingerprint sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI645535B (en) * | 2016-12-23 | 2018-12-21 | 敦捷光電股份有限公司 | Fingerprint sensing identification device with antistatic structure |
| TWI655742B (en) * | 2016-12-22 | 2019-04-01 | 敦捷光電股份有限公司 | Packaging structure with antistatic structure |
-
2014
- 2014-08-27 CN CN201420489143.9U patent/CN204044842U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI655742B (en) * | 2016-12-22 | 2019-04-01 | 敦捷光電股份有限公司 | Packaging structure with antistatic structure |
| TWI645535B (en) * | 2016-12-23 | 2018-12-21 | 敦捷光電股份有限公司 | Fingerprint sensing identification device with antistatic structure |
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