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CN204681073U - Data and charging coffret protective circuit - Google Patents

Data and charging coffret protective circuit Download PDF

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Publication number
CN204681073U
CN204681073U CN201520400551.7U CN201520400551U CN204681073U CN 204681073 U CN204681073 U CN 204681073U CN 201520400551 U CN201520400551 U CN 201520400551U CN 204681073 U CN204681073 U CN 204681073U
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China
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power supply
terminal
diode
resistor
comparator
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Inventor
邓镓卓
高波
林妍君
孙敏丽
刘贵富
张淦水
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Nanchong Power Supply Co of State Grid Sichuan Electric Power Co Ltd
State Grid Corp of China SGCC
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Nanchong Power Supply Co of State Grid Sichuan Electric Power Co Ltd
State Grid Corp of China SGCC
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Abstract

数据及充电传输接口保护电路,连接在移动设备数据接口的供电端和总线端之间,由比较器、第一NMOS管、第二NMOS管、第一二极管、第二二极管、第一直流电源、第二直流电源、限流电阻、第一上拉电阻和第二上拉电阻组成;所述比较器的输出端连接两个NMOS管的栅极,两个NMOS管的衬底分别连接供电端和总线端,并与各自的漏极连接;所述第二直流电源的电压值大于第一直流电源。本实用新型可以实现对移动设备USB电源输出线的有效保护,无论USB电源输出线VBUS发生对电源还是对地短路,均不影响移动设备内部电路的正常工作,实现了可靠的短路保护。

The data and charging transmission interface protection circuit is connected between the power supply end and the bus end of the data interface of the mobile device, and consists of a comparator, a first NMOS transistor, a second NMOS transistor, a first diode, a second diode, and a second diode. A DC power supply, a second DC power supply, a current limiting resistor, a first pull-up resistor and a second pull-up resistor; the output terminals of the comparator are connected to the gates of the two NMOS transistors, and the substrates of the two NMOS transistors The power supply terminal and the bus terminal are respectively connected, and connected to their respective drains; the voltage value of the second DC power supply is greater than that of the first DC power supply. The utility model can realize effective protection for the USB power output line of the mobile device, no matter whether the USB power output line VBUS is short-circuited to the power supply or to the ground, it does not affect the normal operation of the internal circuit of the mobile device, and realizes reliable short-circuit protection.

Description

数据及充电传输接口保护电路Data and charging transmission interface protection circuit

技术领域 technical field

本实用新型涉及电子电路领域,具体地,涉及一种数据及充电传输接口保护电路。  The utility model relates to the field of electronic circuits, in particular to a data and charging transmission interface protection circuit. the

背景技术 Background technique

为了保证使用安全,移动设备,例如野外数据采集时使用的车载设备的安全性能要求很高,在设计时便要保证故障发生率尽量低。作为目前应用最为广泛的移动外设与主机间通讯接口,USB(Universal Serial Bus)具有成本低、使用简单、支持即插即用、易于扩展等特点,在车载娱乐和存储设备上获得了广泛的应用。因为USB接口提供了内置电源,可提供 500mA以上的电流,对于一些功率较大的设备,如移动硬盘等,其瞬时驱动电流则可达到1A以上。对于USB总线这种可以直接输出电源的接口,可能发生接口电路对电源或对地短路的情况,此时将会损坏机体。 In order to ensure the safety of use, mobile devices, such as vehicle-mounted devices used in field data collection, have high safety performance requirements, and the design must ensure that the failure rate is as low as possible. As the most widely used communication interface between mobile peripherals and hosts, USB (Universal Serial Bus) has the characteristics of low cost, simple use, support for plug and play, and easy expansion. application. Because the USB interface provides a built-in power supply, it can provide a current of more than 500mA. For some devices with high power, such as mobile hard disks, the instantaneous drive current can reach more than 1A. For an interface such as the USB bus that can directly output power, the interface circuit may be short-circuited to the power supply or to the ground, which will damage the body at this time.

实用新型内容 Utility model content

为克服可对外供电充电的移动设备接口发生对电源或地短路时大电流损坏内部器件及设备的技术缺陷,本实用新型公开了一种数据及充电传输接口保护电路。 In order to overcome the technical defect that a large current will damage internal devices and equipment when the interface of a mobile device capable of external power supply and charging is short-circuited to a power supply or ground, the utility model discloses a protection circuit for a data and charging transmission interface.

数据及充电传输接口保护电路,连接在移动设备数据接口的供电端和总线端之间,其特征在于,由比较器、第一NMOS管、第二NMOS管、第一二极管、第二二极管、第一直流电源、第二直流电源、限流电阻、第一上拉电阻和第二上拉电阻组成; The data and charging transmission interface protection circuit is connected between the power supply terminal and the bus terminal of the data interface of the mobile device, and is characterized in that it consists of a comparator, a first NMOS tube, a second NMOS tube, a first diode, a second two Composed of pole tube, first DC power supply, second DC power supply, current limiting resistor, first pull-up resistor and second pull-up resistor;

所述比较器的输出端连接两个NMOS管的栅极,两个NMOS管的衬底分别连接供电端和总线端,并与各自的漏极连接,两个NMOS管的源极互联,并连接第一二极管的正极,限流电阻连接在第一二极管的负极与比较器反相输入端之间,比较器正相输入端通过第二上拉电阻连接第一直流电源,并连接第二二极管正极,第二二极管负极连接总线端,比较输出端通过第一上拉电阻连接第二直流电源;所述第二直流电源的电压值大于第一直流电源; The output terminals of the comparator are connected to the gates of two NMOS transistors, the substrates of the two NMOS transistors are respectively connected to the power supply terminal and the bus terminal, and are connected to their respective drains, and the sources of the two NMOS transistors are interconnected and connected to The positive pole of the first diode, the current limiting resistor is connected between the negative pole of the first diode and the inverting input terminal of the comparator, the positive phase input terminal of the comparator is connected to the first DC power supply through the second pull-up resistor, and The anode of the second diode is connected, the cathode of the second diode is connected to the bus terminal, and the comparison output terminal is connected to the second DC power supply through the first pull-up resistor; the voltage value of the second DC power supply is greater than that of the first DC power supply;

所述总线端与地线之间连接有第三NMOS管,所述第三NMOS管的栅极、源极和衬底均与地连接,漏极连接总线端,所述供电端和第二NMOS管的源极之间连接有PMOS管,所述PMOS管的栅极、源极和衬底均与供电端连接,漏极连接第二NMOS管的源极。 A third NMOS transistor is connected between the bus terminal and the ground wire, the gate, source and substrate of the third NMOS transistor are all connected to the ground, the drain is connected to the bus terminal, and the power supply terminal and the second NMOS transistor are connected to each other. A PMOS transistor is connected between the sources of the transistors, the gate, source and substrate of the PMOS transistors are all connected to the power supply terminal, and the drain is connected to the source of the second NMOS transistor.

优选的,所述比较器输出端到地之间连接有发光二极管。 Preferably, a light emitting diode is connected between the output terminal of the comparator and the ground.

优选的,所述限流电阻两端和地之间分别连接有第一电容和极点电阻。 Preferably, a first capacitor and a pole resistor are respectively connected between the two ends of the current limiting resistor and the ground.

优选的,所述比较器正相输入端和地之间连接有第二电容。 Preferably, a second capacitor is connected between the non-inverting input terminal of the comparator and the ground.

本实用新型所述数据及充电传输接口保护电路,可以实现对移动设备USB电源输出线的有效保护,无论USB电源输出线VBUS发生对电源还是对地短路,均不影响移动设备内部电路的正常工作,实现了可靠的短路保护。通过使用成本极低的普通分离器件,大幅降低了制造成本。 The data and charging transmission interface protection circuit described in the utility model can effectively protect the USB power output line of the mobile device, and no matter whether the USB power output line VBUS is short-circuited to the power supply or to the ground, it will not affect the normal operation of the internal circuit of the mobile device , to achieve a reliable short-circuit protection. Manufacturing costs are significantly reduced by using very low-cost common discrete devices.

附图说明 Description of drawings

图1是本实用新型一种具体实施方式示意图; Fig. 1 is a kind of specific embodiment schematic diagram of the utility model;

附图中标记及相应的零部件名称:VIN-供电端,VBUS-第一分压电阻,VCC1-第一直流电源,VCC2-第二直流电源,COMP-比较器,R1–限流电阻,R2-极点电阻,R3-第一上拉电阻,R4-第二上拉电阻,D1-第一二极管,D2-第二二极管,D3-发光二极管,C1–第一电容,C2-第二电容,M1-第一NMOS管,M2-第二NMOS管,M3-第三NMOS管,M4-PMOS管。 The marks in the drawings and the names of corresponding parts: VIN-power supply terminal, VBUS-first voltage divider resistor, VCC1-first DC power supply, VCC2-second DC power supply, COMP-comparator, R1-current limiting resistor, R2-pole resistor, R3-first pull-up resistor, R4-second pull-up resistor, D1-first diode, D2-second diode, D3-light-emitting diode, C1-first capacitor, C2- The second capacitor, M1-the first NMOS transistor, M2-the second NMOS transistor, M3-the third NMOS transistor, M4-the PMOS transistor.

具体实施方式 Detailed ways

下面结合实施例及附图,对本实用新型作进一步地的详细说明,但本实用新型的实施方式不限于此。 The utility model will be further described in detail below in conjunction with the embodiments and accompanying drawings, but the implementation of the utility model is not limited thereto.

本实用新型所述数据及充电传输接口保护电路,连接在移动设备数据接口的供电端和总线端之间,其特征在于,由比较器、第一NMOS管、第二NMOS管、第一二极管、第二二极管、第一直流电源、第二直流电源、第一分压电阻、第二分压电阻、第一上拉电阻和第二上拉电阻组成; The data and charging transmission interface protection circuit described in the utility model is connected between the power supply terminal and the bus terminal of the data interface of the mobile device, and is characterized in that it consists of a comparator, a first NMOS tube, a second NMOS tube, and a first diode tube, a second diode, a first DC power supply, a second DC power supply, a first voltage dividing resistor, a second voltage dividing resistor, a first pull-up resistor and a second pull-up resistor;

所述比较器的输出端连接两个NMOS管的栅极,两个NMOS管的衬底分别连接供电端和总线端,并与各自的漏极连接,两个NMOS管的源极互联,并连接第一二极管的正极,限流电阻连接在第一二极管的负极与比较器反相输入端之间,比较器正相输入端通过第二上拉电阻连接第一直流电源,并连接第二二极管正极,第二二极管负极连接总线端,比较输出端通过第一上拉电阻连接第二直流电源; The output terminals of the comparator are connected to the gates of two NMOS transistors, the substrates of the two NMOS transistors are respectively connected to the power supply terminal and the bus terminal, and are connected to their respective drains, and the sources of the two NMOS transistors are interconnected and connected to The positive pole of the first diode, the current limiting resistor is connected between the negative pole of the first diode and the inverting input terminal of the comparator, the positive phase input terminal of the comparator is connected to the first DC power supply through the second pull-up resistor, and Connect the anode of the second diode, connect the cathode of the second diode to the bus terminal, and connect the comparison output terminal to the second DC power supply through the first pull-up resistor;

所述第二直流电源的电压值大于第一直流电源。 The voltage value of the second DC power supply is greater than that of the first DC power supply.

例如第一直流电源取3.3V,第二直流电源取12V,此时对于供电端,输入电压应该在3.3至12V之间,例如为5V。 For example, the first DC power source is 3.3V, and the second DC power source is 12V. At this time, for the power supply terminal, the input voltage should be between 3.3 and 12V, for example, 5V.

对于两个NMOS管,漏极为P区,衬底为N区,衬底与漏极连接,形成从漏极指向衬底的二极管,对于两个NMOS管连接在一起的源极A点,当在VBUS端接入外界设备时,无论VBUS端电压高于或低于5V,在A点电压都是VBUS端和VIN端之间的较高者。 For two NMOS transistors, the drain is the P region, the substrate is the N region, and the substrate is connected to the drain to form a diode pointing from the drain to the substrate. For the source A point where the two NMOS transistors are connected together, when in When the VBUS terminal is connected to an external device, no matter whether the voltage of the VBUS terminal is higher or lower than 5V, the voltage at point A is the higher one between the VBUS terminal and the VIN terminal.

当VBUS端电压在第一直流电源和第二直流电源电压区间值之外,即大于12V或小于3.3V时,例如当小于3.3V时,A点电压为5V,通过第一二极管D1 和限流电阻在比较器反相输入端电压输入,而由于VBUS电压低于3.3V,使第二二极管导通,在比较器正相输入端,电压为低于3.3V的值,比较器输出低电平,关闭两个MOS管,避免VBUS端电压过低,即通常的短路接地时,造成VIN与地之间短路。而当VBUS电压高于5V时,A点电压为VBUS电压,但第二二极管不导通,使比较器正相输入端电压仍然为第一直流电源的3.3V,比较器正相输入端输入电压高于5V,输出电压仍然为负值,两个MOS管保持关闭,此时不充电,避免电流倒灌5V电压,损害电池。 When the VBUS terminal voltage is outside the range between the first DC power supply and the second DC power supply voltage, that is, greater than 12V or less than 3.3V, for example, when it is less than 3.3V, the voltage at point A is 5V, through the first diode D1 And the current limiting resistor is input at the inverting input terminal of the comparator, and because the VBUS voltage is lower than 3.3V, the second diode is turned on, and the voltage at the non-inverting input terminal of the comparator is a value lower than 3.3V, and the comparison The output of the device is low, and the two MOS transistors are turned off to avoid the voltage of the VBUS terminal being too low, that is, when the usual short circuit is grounded, it will cause a short circuit between VIN and ground. And when the VBUS voltage is higher than 5V, the voltage at point A is the VBUS voltage, but the second diode is not conducting, so that the voltage of the comparator’s positive phase input terminal is still 3.3V of the first DC power supply, and the comparator’s positive phase input The input voltage of the terminal is higher than 5V, the output voltage is still negative, and the two MOS tubes are kept off, and there is no charging at this time, so as to avoid the current flowing back into the 5V voltage and damage the battery.

而当VBUS电压高于第二直流电源12V时,由于此时对于第二NMOS管,栅极电压被VCC2限制在12V,VGS已经变为负值,M2不会导通,避免高压损害内部器件。 And when the VBUS voltage is higher than the second DC power supply 12V, since the gate voltage of the second NMOS transistor is limited to 12V by VCC2 at this time, VGS has become a negative value, and M2 will not be turned on to avoid high voltage damage to internal devices.

所述总线端与地线之间还连接有第三NMOS管,所述第三NMOS管的栅极、源极和衬底均与地连接,漏极连接总线端,所述供电端和第二NMOS管的源极之间连接有PMOS管,所述PMOS管的栅极、源极和衬底均与供电端连接,漏极连接第二NMOS管的源极 A third NMOS transistor is also connected between the bus terminal and the ground wire, the gate, source and substrate of the third NMOS transistor are all connected to the ground, the drain is connected to the bus terminal, and the power supply terminal and the second NMOS transistor are connected to the ground. A PMOS transistor is connected between the sources of the NMOS transistors, the gate, source and substrate of the PMOS transistors are all connected to the power supply terminal, and the drain is connected to the source of the second NMOS transistor

第三NMOS管M3和PMOS管的作用是为总线端提供静电防护电路,由于总线端暴露在外,并且由于外接设备,例如U盘的频繁插拔,遭遇静电破坏的可能性较大,静电保护电路为总线端VBUS提供静电防护,在正常状态下,由于两个MOS管的栅源连接在一起,VGS=0,两个MOS均不导通,不影响电路正常工作。 The function of the third NMOS transistor M3 and the PMOS transistor is to provide an electrostatic protection circuit for the bus terminal. Since the bus terminal is exposed to the outside, and due to the frequent plugging and unplugging of external devices, such as U disks, the possibility of encountering electrostatic damage is relatively high. The electrostatic protection circuit Provide electrostatic protection for the bus terminal VBUS. Under normal conditions, since the gate and source of the two MOS transistors are connected together, VGS=0, the two MOSs are not conducting, which does not affect the normal operation of the circuit.

当遭遇静电脉冲时,以该引脚遭遇正电压静电脉冲,并向地线泻放为例,该静电电压通过第三NMOS管M3的栅漏寄生电容耦合到M3栅极,使M3导通,从而向地线泻放静电电压,若遭遇负电压静电脉冲,则地线电位高于VBUS端,使M3的衬底到漏极的寄生二极管导通,使负的高压静电泻放,避免高压静电直接作用于内部器件,例如比较器的输入端等,破坏内部电路。 When encountering an electrostatic pulse, take this pin encountering a positive voltage electrostatic pulse and discharge it to the ground as an example. The electrostatic voltage is coupled to the gate of M3 through the gate-drain parasitic capacitance of the third NMOS transistor M3, so that M3 is turned on. In this way, the electrostatic voltage is discharged to the ground wire. If a negative voltage static pulse is encountered, the potential of the ground wire is higher than that of the VBUS terminal, so that the parasitic diode from the substrate to the drain of M3 is turned on, so that the negative high-voltage static electricity is discharged, and the high-voltage static electricity is avoided. Act directly on internal devices, such as the input terminal of comparators, etc., and destroy internal circuits.

对PMOS管M4,泻放原理近似,所不同的是,由于第二NMOS管M2连接在总线端和A点之间,存在从总线端指向A点正向导通的寄生二极管,在总线端VBUS遭遇相对供电端VIN的正高压静电脉冲时,静电首先通过该寄生二极管到到达A点,再从A点通过PMOS管M4的漏极-衬底寄生二极管到达供电端,反之,当总线端VBUS遭遇相对供电端VIN的负高压静电脉冲时,则均通过第二NMOS管M2和PMOS管M4的栅漏寄生电容耦合到栅极,使相应的MOS管导通,从而建立从VBUS端到VIN端的静电泻放通路 。 For PMOS transistor M4, the discharge principle is similar. The difference is that since the second NMOS transistor M2 is connected between the bus terminal and point A, there is a parasitic diode pointing from the bus terminal to point A for forward conduction, and the bus terminal VBUS encounters When the positive high-voltage electrostatic pulse of the power supply terminal VIN is applied, the static electricity first passes through the parasitic diode to point A, and then from point A passes through the drain of the PMOS transistor M4-substrate parasitic diode to reach the power supply terminal. On the contrary, when the bus terminal VBUS encounters a relative When the negative high-voltage electrostatic pulse of the power supply terminal VIN is applied, it is coupled to the gate through the gate-drain parasitic capacitance of the second NMOS transistor M2 and PMOS transistor M4, so that the corresponding MOS transistor is turned on, thereby establishing an electrostatic discharge from the VBUS terminal to the VIN terminal. Let the path go.

可以在比较器输出端设置一个发光二极管D3,正负极分别连接比较器输出端和地,在比较器输出正电压,两个NMOS管开启时,D3发光,提示此时数据接口正常,如D3不亮,则比较器输出低电平,表示接入电源幅值超范围。 A light-emitting diode D3 can be set at the output end of the comparator, and the positive and negative poles are respectively connected to the output end of the comparator and the ground. When the comparator outputs a positive voltage and the two NMOS transistors are turned on, D3 lights up, indicating that the data interface is normal at this time, such as D3 If it is off, the comparator outputs a low level, indicating that the amplitude of the connected power supply is out of range.

本实用新型A点反馈到比较器反相输入端,实际构成一个反馈环路,为提高环路稳定性,可以采取在输入端接电容的措施,例如在所述限流电阻两端和地之间分别连接有第一电容和极点电阻,或在所述比较器正相输入端和地之间连接有第二电容,都可以提供一个主极点,其中第一种方式更加复杂,通常极点电阻R2 阻值远大于R1,尽量削弱R1、R2分压带来的在比较器输入端带来的电压变化影响,R2和C1共同提供一个主极点,通过对R2的调节,可以更好的调节主极点的位置,这与第二种方式仅在输入端连接C2电容,对比较器的输入阻抗模糊处理相比,更加精确。 Point A of the utility model is fed back to the inverting input terminal of the comparator, which actually constitutes a feedback loop. In order to improve the stability of the loop, a measure of connecting a capacitor at the input terminal can be taken, for example, between the two ends of the current limiting resistor and the ground. A first capacitor and a pole resistor are respectively connected between them, or a second capacitor is connected between the non-inverting input terminal of the comparator and the ground to provide a main pole, wherein the first method is more complicated, usually the pole resistor R2 The resistance value is much larger than R1, so as to weaken the influence of the voltage change at the input end of the comparator caused by the voltage division of R1 and R2 as much as possible. R2 and C1 together provide a main pole. By adjusting R2, the main pole can be better adjusted. Compared with the second method, which only connects the C2 capacitor at the input end to fuzzy processing of the input impedance of the comparator, it is more accurate.

如上所述,可较好的实现本实用新型。 As mentioned above, the utility model can be better realized.

Claims (4)

1.数据及充电传输接口保护电路,连接在移动设备数据接口的供电端和总线端之间,其特征在于,由比较器、第一NMOS管、第二NMOS管、第一二极管、第二二极管、第一直流电源、第二直流电源、限流电阻、第一上拉电阻和第二上拉电阻组成; 1. The data and charging transmission interface protection circuit is connected between the power supply terminal and the bus terminal of the data interface of the mobile device, and is characterized in that it consists of a comparator, a first NMOS transistor, a second NMOS transistor, a first diode, and a second NMOS transistor. Two diodes, a first DC power supply, a second DC power supply, a current limiting resistor, a first pull-up resistor and a second pull-up resistor; 所述比较器的输出端连接两个NMOS管的栅极,两个NMOS管的衬底分别连接供电端和总线端,并与各自的漏极连接,两个NMOS管的源极互联,并连接第一二极管的正极,限流电阻连接在第一二极管的负极与比较器反相输入端之间,比较器正相输入端通过第二上拉电阻连接第一直流电源,并连接第二二极管正极,第二二极管负极连接总线端,比较输出端通过第一上拉电阻连接第二直流电源;所述第二直流电源的电压值大于第一直流电源; The output terminals of the comparator are connected to the gates of two NMOS transistors, the substrates of the two NMOS transistors are respectively connected to the power supply terminal and the bus terminal, and are connected to their respective drains, and the sources of the two NMOS transistors are interconnected and connected to The positive pole of the first diode, the current limiting resistor is connected between the negative pole of the first diode and the inverting input terminal of the comparator, the positive phase input terminal of the comparator is connected to the first DC power supply through the second pull-up resistor, and The anode of the second diode is connected, the cathode of the second diode is connected to the bus terminal, and the comparison output terminal is connected to the second DC power supply through the first pull-up resistor; the voltage value of the second DC power supply is greater than that of the first DC power supply; 所述总线端与地线之间连接有第三NMOS管,所述第三NMOS管的栅极、源极和衬底均与地连接,漏极连接总线端,所述供电端和第二NMOS管的源极之间连接有PMOS管,所述PMOS管的栅极、源极和衬底均与供电端连接,漏极连接第二NMOS管的源极。 A third NMOS transistor is connected between the bus terminal and the ground wire, the gate, source and substrate of the third NMOS transistor are all connected to the ground, the drain is connected to the bus terminal, and the power supply terminal and the second NMOS transistor are connected to each other. A PMOS transistor is connected between the sources of the transistors, the gate, source and substrate of the PMOS transistors are all connected to the power supply terminal, and the drain is connected to the source of the second NMOS transistor. 2.根据权利要求1所述的数据及充电传输接口保护电路,其特征在于,所述比较器输出端到地之间连接有发光二极管。 2. The data and charging transmission interface protection circuit according to claim 1, wherein a light emitting diode is connected between the output terminal of the comparator and the ground. 3.根据权利要求1所述的数据及充电传输接口保护电路,其特征在于,所述限流电阻两端和地之间分别连接有第一电容和极点电阻。 3. The data and charging transmission interface protection circuit according to claim 1, wherein a first capacitor and a pole resistor are respectively connected between the two ends of the current limiting resistor and the ground. 4.根据权利要求1所述的数据及充电传输接口保护电路,其特征在于,所述比较器正相输入端和地之间连接有第二电容。 4 . The data and charging transmission interface protection circuit according to claim 1 , wherein a second capacitor is connected between the non-inverting input end of the comparator and the ground.
CN201520400551.7U 2015-06-11 2015-06-11 Data and charging coffret protective circuit Expired - Fee Related CN204681073U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106095709A (en) * 2016-06-14 2016-11-09 罗艳平 Electric automobile vehicle-mounted communications device data read-write interface
WO2019204436A1 (en) * 2018-04-17 2019-10-24 Texas Instruments Incorporated Usb type-c/pd controller having integrated vbus to cc short protection

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106095709A (en) * 2016-06-14 2016-11-09 罗艳平 Electric automobile vehicle-mounted communications device data read-write interface
CN106095709B (en) * 2016-06-14 2018-12-25 威马汽车科技集团有限公司 The vehicle-mounted communications device data read-write interface of electric car
WO2019204436A1 (en) * 2018-04-17 2019-10-24 Texas Instruments Incorporated Usb type-c/pd controller having integrated vbus to cc short protection
US10855069B2 (en) 2018-04-17 2020-12-01 Texas Instruments Incorporated USB type-C/PD controller having integrated VBUS to CC short protection
CN112088476A (en) * 2018-04-17 2020-12-15 德州仪器公司 USB TYPE-C/PD controller with integrated VBUS to CC short-circuit protection
US11355918B2 (en) 2018-04-17 2022-06-07 Texas Instruments Incorporated USB type-C/PD controller having integrated VBUS to CC short protection
US11848552B2 (en) 2018-04-17 2023-12-19 Texas Instruments Incorporated USB type-C/PD controller having integrated VBUS to CC short protection
CN112088476B (en) * 2018-04-17 2024-04-05 德州仪器公司 USB TYPE-C/PD controller with integrated VBUS to CC short circuit protection

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