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CN205542882U - Encapsulation body of LED - Google Patents

Encapsulation body of LED Download PDF

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Publication number
CN205542882U
CN205542882U CN201620261736.9U CN201620261736U CN205542882U CN 205542882 U CN205542882 U CN 205542882U CN 201620261736 U CN201620261736 U CN 201620261736U CN 205542882 U CN205542882 U CN 205542882U
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emitting diode
substrate
light
led
phosphor plate
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Chinese (zh)
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崔爀仲
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Seoul Semiconductor Co Ltd
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Seoul Semiconductor Co Ltd
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Abstract

本实用新型涉及发光二极管封装体,包括:基板;贴装于所述基板上的一个以上的发光二极管芯片;荧光体板,其配置于所述一个以上的发光二极管芯片上,对所述一个以上的发光二极管芯片发光的光进行波长变换;及壁部,其配置于所述基板上,包围所述一个以上的发光二极管芯片;所述荧光体板覆盖所述一个以上的发光二极管芯片的整个上面,所述荧光体板的宽度大于所述一个以上的发光二极管芯片的宽度。根据本实用新型,由于荧光体板的宽度大于发光二极管芯片,因而发光二极管芯片发光的光可以全部通过荧光体板而释放到外部,具有能够防止发生发光二极管封装体释放的光的色差的效果。

The utility model relates to a light-emitting diode package, comprising: a substrate; more than one light-emitting diode chip mounted on the substrate; a phosphor plate, which is arranged on the one or more light-emitting diode chips, wavelength conversion of the light emitted by the light-emitting diode chips; and a wall portion, which is arranged on the substrate and surrounds the one or more light-emitting diode chips; the phosphor plate covers the entire upper surface of the one or more light-emitting diode chips , the width of the phosphor plate is greater than the width of the one or more LED chips. According to the utility model, since the width of the phosphor plate is larger than that of the LED chip, the light emitted by the LED chip can pass through the phosphor plate and be released to the outside, which has the effect of preventing the chromatic aberration of the light emitted by the LED package.

Description

发光二极管封装体LED package

技术领域technical field

本实用新型涉及发光二极管封装体,更详细而言,涉及一种不发生释放到外部的光的色差的发光二极管封装体。The utility model relates to a light-emitting diode package, and in more detail, relates to a light-emitting diode package that does not cause chromatic aberration of light released to the outside.

背景技术Background technique

发光二极管作为释放因电子与空穴复合而发生的光的无机半导体元件,最近正在显示装置、汽车灯、乃至普通照明的多样领域中使用。这种发光二极管具有寿命长、耗电低、响应速度快的优点。因此,利用发光二极管的发光装置有望替代原有的光源。Light-emitting diodes are inorganic semiconductor elements that emit light generated by recombination of electrons and holes, and are currently being used in various fields including display devices, automobile lamps, and general lighting. This LED has the advantages of long life, low power consumption, and fast response. Therefore, the light emitting device utilizing the light emitting diode is expected to replace the original light source.

利用发光二极管的发光二极管芯片,根据电极位置及结构而分为水平型发光二极管芯片、倒装芯片型发光二极管芯片及竖直型发光二极管芯片,其中,倒装芯片型发光二极管芯片由于电极位于下部,因而具有可以直接贴装于基板上使用的优点。进一步地,倒装芯片型发光二极管芯片在水平方向上充分发生电流分散,具有散热效率良好的优点,广泛用于高功率发光装置。LED chips using LEDs are classified into horizontal LED chips, flip-chip LED chips, and vertical LED chips according to the position and structure of the electrodes. , so it has the advantage that it can be directly mounted on the substrate. Furthermore, the flip-chip type light emitting diode chip fully generates current dispersion in the horizontal direction, has the advantage of good heat dissipation efficiency, and is widely used in high-power light emitting devices.

而且,为了利用如上所述的发光二极管芯片,用于释放白色光或其它波长的光的发光装置,可以在发光二极管芯片上部配置有荧光体。此时,以往主要使用把荧光体涂布于发光二极管芯片上部,或在包围发光二极管芯片的反射杯的内部注入包含荧光体的树脂的方法。Furthermore, in order to use the above-mentioned light-emitting diode chip for a light-emitting device emitting white light or light of other wavelengths, a phosphor may be disposed on the top of the light-emitting diode chip. At this time, conventionally, a method of applying a phosphor to the upper portion of the LED chip or injecting a resin containing the phosphor into the reflective cup surrounding the LED chip has been mainly used.

可是,如上所述把包含荧光体的树脂涂布于发光二极管芯片上部而形成的情形,由于在树脂硬化过程中荧光体沉淀等,荧光体无法在树脂内均匀分布。因此,当发光二极管芯片发光的光激发荧光体并释放到外部时,会出现发生荧光体的比重高的区域与低的区域间的色差的问题。However, in the case where the resin containing phosphor is coated on the upper part of the LED chip as described above, the phosphor cannot be uniformly distributed in the resin due to precipitation of the phosphor during the curing of the resin. Therefore, when the light emitted by the light-emitting diode chip excites the phosphor and is released to the outside, there is a problem of color difference between the area where the specific gravity of the phosphor is high and the area where the specific gravity is low.

实用新型内容Utility model content

技术问题technical problem

本实用新型要解决的课题是提供一种发光二极管封装体,当发光二极管芯片发生的光通过荧光体而激发时,能够不发生色差。The problem to be solved by the utility model is to provide a light-emitting diode package, when the light generated by the light-emitting diode chip is excited by the phosphor, no color difference will occur.

技术方案Technical solutions

本实用新型提供一种发光二极管封装体,包括:基板;贴装于所述基板上的一个以上的发光二极管芯片;荧光体板,其配置于所述一个以上的发光二极管芯片上,对所述一个以上的发光二极管芯片发光的光进行波长变换;及壁部,其配置于所述基板上,包围所述一个以上的发光二极管芯片;所述荧光体板覆盖所述一个以上的发光二极管芯片的整个上面,所述荧光体板的宽度大于所述一个以上的发光二极管芯片的宽度。The utility model provides a light-emitting diode package, comprising: a substrate; more than one light-emitting diode chip mounted on the substrate; a phosphor plate, which is configured on the one or more light-emitting diode chips, and The light emitted by one or more light emitting diode chips undergoes wavelength conversion; and the wall part is arranged on the substrate and surrounds the one or more light emitting diode chips; the phosphor plate covers the surface of the one or more light emitting diode chips Throughout the above, the width of the phosphor plate is greater than the width of the one or more LED chips.

技术效果technical effect

根据本实用新型,由于荧光体板的宽度大于发光二极管芯片,因而发光二极管芯片发光的光可以全部通过荧光体板释放到外部,具有能够防止发生发光二极管封装体释放的光的色差的效果。According to the utility model, since the width of the phosphor plate is larger than that of the LED chip, all the light emitted by the LED chip can be released to the outside through the phosphor plate, which has the effect of preventing the chromatic aberration of the light emitted by the LED package.

进一步地,在发光二极管芯片的上部贴装的荧光体板大于发光二极管芯片宽度地形成,当把荧光体板贴装于发光二极管芯片的上部时,具有即使与发光二极管芯片的对齐不准确,发光二极管发光的光也能够通过荧光体板释放到外部的效果。Furthermore, the phosphor plate mounted on the upper part of the LED chip is formed to be larger than the width of the LED chip. When the phosphor plate is mounted on the upper part of the LED chip, even if the alignment with the LED chip is inaccurate, it will not emit light. The light emitted by the diode can also be released to the outside through the phosphor plate.

另外,随着荧光体板大于发光二极管芯片地形成,在与包围发光二极管芯片的壁部之间形成空间,发光二极管芯片释放的光在壁部反射,向发光二极管芯片上部方向反射,因而具有能够提高发光二极管封装体的光效率的效果。In addition, as the phosphor plate is formed larger than the LED chip, a space is formed between the wall surrounding the LED chip, and the light emitted from the LED chip is reflected on the wall and reflected toward the upper side of the LED chip. The effect of improving the light efficiency of the light emitting diode package.

附图说明Description of drawings

图1是图示本实用新型一个实施例的发光二极管封装体的立体图;Fig. 1 is a perspective view illustrating an LED package according to an embodiment of the present invention;

图2是图示本实用新型一个实施例的发光二极管封装体的剖面图;Fig. 2 is a cross-sectional view illustrating an LED package according to an embodiment of the present invention;

图3是用于说明本实用新型一个实施例的发光二极管封装体的把荧光体板贴装于发光二极管芯片的情形的图。FIG. 3 is a diagram for explaining a state of attaching a phosphor plate to a light-emitting diode chip of the light-emitting diode package according to an embodiment of the present invention.

附图标记说明Explanation of reference signs

100:发光二极管封装体 110:基板100: LED package 110: Substrate

111:基底 112:第一引线111: Substrate 112: First lead

113:第二引线 114:第一基板垫113: Second Lead 114: First Substrate Pad

115:第二基板垫 116:第一通孔115: second substrate pad 116: first through hole

117:第二通孔 118:散热垫117: Second through hole 118: Thermal pad

120:发光二极管芯片 130:荧光体板120: LED chip 130: Phosphor plate

140:壁部 140a:反射面140: wall portion 140a: reflective surface

150:透镜 152:板部150: Lens 152: Plate

154:圆顶部 G:间隙154: Domed top G: Gap

A:对齐点A: Alignment point

具体实施方式detailed description

本实用新型一个实施例的发光二极管封装体可以包括:基板;贴装于所述基板上的一个以上的发光二极管芯片;荧光体板,其配置于所述一个以上的发光二极管芯片上,对所述一个以上的发光二极管芯片发光的光进行波长变换;及壁部,其配置于所述基板上,包围所述一个以上的发光二极管芯片;所述荧光体板可以覆盖所述一个以上的发光二极管芯片的上面全体,所述荧光体板的宽度可以大于所述一个以上的发光二极管芯片的宽度。The light-emitting diode package in one embodiment of the present invention may include: a substrate; more than one light-emitting diode chip mounted on the substrate; a phosphor plate configured on the one or more light-emitting diode chips, for all The light emitted by the one or more light emitting diode chips undergoes wavelength conversion; and the wall is configured on the substrate to surround the one or more light emitting diode chips; the phosphor plate can cover the one or more light emitting diodes On the entire upper surface of the chip, the width of the phosphor plate may be greater than the width of the one or more LED chips.

此时,所述壁部可以覆盖所述一个以上的发光二极管芯片的侧面中至少一者的一部分。In this case, the wall portion may cover a part of at least one side surface of the one or more light emitting diode chips.

另外,所述壁部可以覆盖所述荧光体板侧面中至少一者的一部分,所述壁部可以覆盖所述发光二极管芯片的侧面中至少一者的一部分,使得形成被所述荧光体板、发光二极管芯片及壁部包围的间隙。此时,所述间隙可以包围所述发光二极管芯片外周面的至少一部分。In addition, the wall part may cover a part of at least one of the side faces of the phosphor plate, and the wall part may cover a part of at least one of the side faces of the light emitting diode chip, so that the phosphor plate, The light emitting diode chip and the gap surrounded by the wall. At this time, the gap may surround at least a part of the outer peripheral surface of the light emitting diode chip.

其中,包围所述间隙的壁部的内侧面可以为反射面,所述反射面可以以向所述发光二极管芯片方向凸出的形状形成。Wherein, the inner surface of the wall portion surrounding the gap may be a reflective surface, and the reflective surface may be formed in a shape protruding toward the light emitting diode chip.

另外,所述荧光体板可以包含一种以上的荧光体。In addition, the phosphor plate may contain one or more kinds of phosphors.

而且,所述荧光体板的中心可以与所述发光二极管芯片的中心一致,或者所述荧光体板的中心可以偏离所述发光二极管芯片的中心。Also, the center of the phosphor plate may coincide with the center of the light emitting diode chip, or the center of the phosphor plate may deviate from the center of the light emitting diode chip.

另外,所述基板可以包括用于排列所述荧光体板的对齐点。In addition, the substrate may include alignment points for aligning the phosphor plates.

而且,所述基板可以包括:基底;第一引线及第二引线,其在所述基底上面形成,与所述一个以上的发光二极管芯片电连接;及第一基板垫及第二基板垫,其在所述基底下面形成,分别与所述第一引线及第二引线电连接。Moreover, the substrate may include: a base; a first lead and a second lead formed on the base and electrically connected to the one or more light-emitting diode chips; and a first substrate pad and a second substrate pad. It is formed under the base and electrically connected with the first lead and the second lead respectively.

此时,所述基板可以还包括第一通孔及第二通孔,所述第一通孔及第二通孔贯通所述基底,使所述第一引线及第二引线分别与所述第一基板垫及第二基板垫电连接;在所述基底下面可以还包括对所述发光二极管芯片发生的热进行散热的散热垫。At this time, the substrate may further include a first through hole and a second through hole, the first through hole and the second through hole penetrate through the base, so that the first lead and the second lead are connected to the first lead respectively. A substrate pad is electrically connected to the second substrate pad; a heat dissipation pad for dissipating heat generated by the light-emitting diode chip may be included under the base.

另外,可以还包括透镜,所述透镜在所述基板上部覆盖所述发光二极管芯片,使所述发光二极管芯片发光的光射出,所述透镜可以包括:板部,其覆盖所述发光二极管芯片;及圆顶部,其在所述板部上部形成,使所述发光二极管芯片发光的光射出到外部。此时,所述壁部的宽度可以大于所述圆顶部的宽度。In addition, a lens may be further included, the lens covers the light emitting diode chip on the upper part of the substrate, and the light emitted by the light emitting diode chip is emitted, and the lens may include: a plate part, which covers the light emitting diode chip; and a dome portion formed on the upper portion of the plate portion to emit light emitted by the light emitting diode chip to the outside. At this time, the width of the wall portion may be greater than the width of the dome portion.

参照附图,对本实用新型的优选实施例进行更具体说明。The preferred embodiments of the present utility model are described in more detail with reference to the accompanying drawings.

图1是图示本实用新型一个实施例的发光二极管封装体的立体图,图2是图示本实用新型一个实施例的发光二极管封装体的剖面图。FIG. 1 is a perspective view illustrating an LED package according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view illustrating an LED package according to an embodiment of the present invention.

如图1及图2所示,本实用新型一个实施例的发光二极管封装体100包括基板110、发光二极管芯片120、荧光体板130、壁部140及透镜150。As shown in FIGS. 1 and 2 , an LED package 100 according to an embodiment of the present invention includes a substrate 110 , an LED chip 120 , a phosphor plate 130 , a wall portion 140 and a lens 150 .

基板110可供发光二极管芯片120贴装于上部,为了把从外部供应的电源传递给发光二极管芯片120而配备。另外,也可以对发光二极管芯片120发生的热进行散热。为此,基板110包括基底111、第一引线112及第二引线113、第一基板垫114及第二基板垫115、第一通孔116及第二通孔117以及散热垫118。The substrate 110 can be mounted on the top of the LED chip 120 , and is equipped for transmitting power supplied from the outside to the LED chip 120 . In addition, heat generated by the light emitting diode chip 120 may also be dissipated. To this end, the substrate 110 includes a base 111 , a first lead 112 and a second lead 113 , a first substrate pad 114 and a second substrate pad 115 , a first through hole 116 and a second through hole 117 , and a heat dissipation pad 118 .

基底111可以以包括聚合物物质或陶瓷物质的绝缘性物质形成,或者以包括金属等的导电性物质形成。基底111的形状如图所示,以具有既定厚度的板形状形成,在上部面形成有第一引线112及第二引线113,在作为上部面的背面的下部面,可以形成有第一基板垫114及第二基板垫115和散热垫118。The base 111 may be formed of an insulating substance including a polymer substance or a ceramic substance, or a conductive substance including a metal or the like. The shape of the base 111 is as shown in the figure, and it is formed in a plate shape with a predetermined thickness. The first lead 112 and the second lead 113 are formed on the upper surface, and the first substrate pad may be formed on the lower surface of the back surface of the upper surface. 114 and the second substrate pad 115 and heat dissipation pad 118 .

第一引线112及第二引线113配置于基底111上部面,可以以使得相互电绝缘地隔开的状态配置。而且,第一引线112及第二引线113可以与发光二极管芯片120电连接,因此,第一引线112及第二引线113可以分别包括金属等的导电性物质。The first lead 112 and the second lead 113 are arranged on the upper surface of the base 111 and may be arranged in a state of being electrically insulated from each other. Moreover, the first lead 112 and the second lead 113 can be electrically connected to the LED chip 120 , therefore, the first lead 112 and the second lead 113 can respectively include conductive substances such as metal.

第一基板垫114及第二基板垫115配置于基底111下部面,可以以使得相互电绝缘地隔开的状态配置。此时,第一基板垫114及第二基板垫115可以不同于第一引线112及第二引线113,不在基底111的全体下部面形成,而以偏向一侧及另一侧的状态,具有既定面积地形成。在本实施例中,第一基板垫114及第二基板垫115可以以邻接以四边形状形成的基底111下部面的相向的两条边的状态,沿两条边的长度方向具有既定长度地形成。此时,第一基板垫114及第二基板垫115的形状和位置可以根据外部端子的形状而异。The first substrate pad 114 and the second substrate pad 115 are disposed on the lower surface of the base 111 and may be disposed in a state of being electrically insulating and separated from each other. At this time, unlike the first lead 112 and the second lead 113, the first substrate pad 114 and the second substrate pad 115 may not be formed on the entire lower surface of the base 111, but may be biased to one side and the other side, with a predetermined area formed. In this embodiment, the first substrate pad 114 and the second substrate pad 115 may be formed to have a predetermined length along the length direction of the two sides in a state adjacent to two opposite sides of the lower surface of the base 111 formed in a quadrangular shape. . At this time, the shapes and positions of the first substrate pad 114 and the second substrate pad 115 may vary according to the shape of the external terminal.

第一通孔116及第二通孔117可以分别贯通基底111地形成,第一通孔116电连接第一引线112与第一基板垫114,第二通孔117电连接第二引线113与第二基板垫115。其中,第一通孔116及第二通孔117可以由与第一引线112及第二引线113或第一基板垫114及第二基板垫115相同的导电性物质形成。The first through hole 116 and the second through hole 117 can be respectively formed through the substrate 111. The first through hole 116 is electrically connected to the first lead 112 and the first substrate pad 114, and the second through hole 117 is electrically connected to the second lead 113 and the second lead 113. Two substrate pads 115 . Wherein, the first through hole 116 and the second through hole 117 may be formed of the same conductive material as the first lead 112 and the second lead 113 or the first substrate pad 114 and the second substrate pad 115 .

而且,在第一基板垫114及第二基板垫115隔开的之间区域,可以配置有散热垫118。散热垫118可以以使得与第一基板垫114及第二基板垫115电绝缘地隔开的状态,以接触基底111下部面的状态配置。因此,散热垫118可以配置于包括基底111的下部面中央的区域。Moreover, a heat dissipation pad 118 may be disposed in the area between the first substrate pad 114 and the second substrate pad 115 . The heat dissipation pad 118 may be arranged in a state of being in contact with the lower surface of the base 111 while being electrically insulatingly separated from the first substrate pad 114 and the second substrate pad 115 . Therefore, the heat dissipation pad 118 may be disposed in a region including the center of the lower surface of the base 111 .

即,散热垫118可以配置于与发光二极管芯片120贴装的上部位置对应的下部面。另外,散热垫118可以具有大于发光二极管芯片120的面积。因此,能够使发光二极管芯片120发生的热迅速释放到外部,能够使发光二极管芯片120发生的热对荧光体板130的影响实现最小化。That is, the heat dissipation pad 118 may be disposed on the lower surface corresponding to the upper position where the LED chip 120 is mounted. In addition, the heat dissipation pad 118 may have a larger area than the LED chip 120 . Therefore, the heat generated by the light emitting diode chip 120 can be quickly released to the outside, and the influence of the heat generated by the light emitting diode chip 120 on the phosphor plate 130 can be minimized.

在本实用新型的一个实施例中,是对基底111以绝缘性物质形成的情形进行说明,因而对第一引线112及第二引线113与第一基板垫114及第二基板垫115直接接触基底111的上部面及下部面的情形进行说明。不过,当基底111以导电性物质形成时,在第一引线112及第二引线113与基底111之间,以及第一基板垫114及第二基板垫115与基底111之间,可以分别介入有绝缘层。In one embodiment of the present utility model, the case where the base 111 is formed of an insulating material is described, so the first lead 112 and the second lead 113 and the first substrate pad 114 and the second substrate pad 115 directly contact the base The situation of the upper surface and the lower surface of 111 will be described. However, when the base 111 is formed of a conductive material, between the first lead 112 and the second lead 113 and the base 111, and between the first substrate pad 114 and the second substrate pad 115 and the base 111, there may be interposed Insulation.

发光二极管芯片120贴装于基板110上部,与第一引线112及第二引线113分别电接触地贴装。而且,在本实施例中,发光二极管芯片120可以释放蓝色光或紫外线,在附图中图示了在基板110上贴装一个发光二极管芯片120的情形,但根据需要,可以贴装多个发光二极管芯片120。The light emitting diode chip 120 is mounted on the upper part of the substrate 110 , and is mounted in electrical contact with the first lead 112 and the second lead 113 respectively. Moreover, in this embodiment, the light-emitting diode chip 120 can emit blue light or ultraviolet light. The situation of mounting one light-emitting diode chip 120 on the substrate 110 is illustrated in the drawings, but as required, multiple light-emitting diode chips 120 can be mounted. Diode chip 120 .

在本实施例中,发光二极管芯片120包括n型半导体层与p型半导体层,具有借助于供应的电源,因空穴与电子的复合而能够释放光的结构。为此,在n型半导体层与p型半导体层之间可以介入有活性层。具有这种结构的发光二极管芯片120可以具有水平型、竖直型或倒装芯片型等结构,在本实施例中,对利用倒装芯片型发光二极管芯片120的情形进行说明。In this embodiment, the light emitting diode chip 120 includes an n-type semiconductor layer and a p-type semiconductor layer, and has a structure capable of releasing light due to the recombination of holes and electrons with the help of supplied power. For this purpose, an active layer may be interposed between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting diode chip 120 having such a structure may have a structure such as a horizontal type, a vertical type, or a flip chip type. In this embodiment, the case of using a flip chip type light emitting diode chip 120 will be described.

而且,在本实施例中,虽然未另行图示,但在发光二极管芯片120的下部面,可以形成用于分别与第一引线112及第二引线113电接触的第一电极垫及第二电极垫。因此,第一电极垫可以与第一引线112电接触,第二电极垫可以与第二引线113电接触。即,发光二极管芯片120可以直接倒装焊接于基板110的第一引线112及第二引线113,或借助于SMT(surface mounttechnology,表面贴装技术)而电连接。Moreover, in this embodiment, although not shown separately, on the lower surface of the light-emitting diode chip 120, first electrode pads and second electrodes for electrically contacting the first lead 112 and the second lead 113 respectively can be formed. pad. Accordingly, the first electrode pad may be in electrical contact with the first lead 112 , and the second electrode pad may be in electrical contact with the second lead 113 . That is, the LED chip 120 can be directly flip-chip soldered to the first lead 112 and the second lead 113 of the substrate 110 , or electrically connected by SMT (surface mount technology).

发光二极管芯片120可以贴装于基板110上部面的既定位置,在本实施例中,对一个发光二极管芯片120贴装于基板110上部面的中央的情形进行说明。发光二极管芯片120如此贴装于基板110上部,在基板110的下部面可以配置有散热垫118。因此,发光二极管芯片120发生的热可以通过基板110直接传递到散热垫118,能够提高本实用新型的发光二极管封装体100的散热效率。The light emitting diode chip 120 can be attached to a predetermined position on the upper surface of the substrate 110 , and in this embodiment, a situation in which one light emitting diode chip 120 is attached to the center of the upper surface of the substrate 110 is described. The light emitting diode chip 120 is mounted on the upper part of the substrate 110 in this way, and the heat dissipation pad 118 may be disposed on the lower surface of the substrate 110 . Therefore, the heat generated by the LED chip 120 can be directly transferred to the heat dissipation pad 118 through the substrate 110 , which can improve the heat dissipation efficiency of the LED package 100 of the present invention.

荧光体板130包括多个荧光体和树脂。就多个荧光体而言,在荧光体板130中可以包含多样种类的荧光体中的一种以上,作为一个示例,可以是石榴石荧光体、铝酸盐荧光体、硫化物荧光体、氧氮化物荧光体、氮化物荧光体、氟化物荧光体及硅酸盐荧光体等。而且,可以借助于如上所述的多个荧光体进行波长变换,把发光二极管芯片120发光的光变换成单色光或白色光。The phosphor sheet 130 includes a plurality of phosphors and resin. As for the plurality of phosphors, phosphor plate 130 may contain at least one of various types of phosphors, for example, garnet phosphors, aluminate phosphors, sulfide phosphors, oxygen phosphors, etc. Nitride phosphors, nitride phosphors, fluoride phosphors, silicate phosphors, and the like. Furthermore, wavelength conversion can be carried out by means of a plurality of phosphors as described above, and the light emitted by the LED chip 120 can be converted into monochromatic light or white light.

树脂发挥承载多数的荧光体的承载部的作用,在本实施例中,对树脂用作承载部的情形进行了说明,但可以利用诸如玻璃或陶瓷的材质,在为树脂的情况下,也可以利用聚合物树脂。另外,在本实施例中,荧光体板130可以在透明的树脂与多数的荧光体搅拌的状态下制作成既定大小的板形状并使用。The resin plays the role of a bearing part that supports many phosphors. In this embodiment, the case where the resin is used as the bearing part has been described, but materials such as glass or ceramics can be used, and in the case of resin, it can also be Utilize polymer resins. In addition, in the present embodiment, the phosphor plate 130 can be manufactured into a plate shape of a predetermined size and used in a state where transparent resin and a large number of phosphors are stirred.

此时,荧光体板130可以包括玻璃,此时,多数的荧光体与玻璃珠可以相互混合并凝聚硬化。随着如此利用玻璃制造荧光体板130,因而荧光体板130中包含的多数的荧光体可以在荧光体板130中均匀分布。At this time, the phosphor plate 130 may include glass, and at this time, many phosphors and glass beads may be mixed with each other and condensed and hardened. As the phosphor plate 130 is manufactured using glass in this way, many phosphors included in the phosphor plate 130 can be uniformly distributed in the phosphor plate 130 .

另外,在本实施例中,发光二极管芯片120在贴装于基板110的状态下,被后述的壁部140包围,因此,作为发热源的发光二极管芯片120可以具有密闭的结构。此时,在高电流接入发光二极管芯片120的情况下,为了防止因发光二极管芯片120中的发热导致荧光体板130变形,可以利用耐热性良好的玻璃制造荧光体板130。In addition, in this embodiment, the LED chip 120 is surrounded by the wall portion 140 described later when mounted on the substrate 110 , so the LED chip 120 as a heat source may have a sealed structure. At this time, when a high current is connected to the LED chip 120 , in order to prevent the deformation of the phosphor plate 130 due to heat generated in the LED chip 120 , the phosphor plate 130 may be made of glass having good heat resistance.

即,在本实施例中,荧光体板130并非在发光二极管芯片120上涂布后硬化形成,而是可以另行制作使用。此时,为了把荧光体板130配置于发光二极管芯片120上,可以利用另外的粘合构件。粘合构件最好象荧光体板130一样利用耐热性优秀的材质。That is, in this embodiment, the phosphor plate 130 is not formed by coating on the light emitting diode chip 120 and then cured, but can be manufactured separately for use. At this time, in order to dispose the phosphor plate 130 on the light emitting diode chip 120, another adhesive member may be used. The adhesive member is preferably made of a material with excellent heat resistance like the phosphor plate 130 .

而且,在本实施例中,荧光体板130可以形成得具有大于发光二极管芯片120宽度的宽度。与此相关的详细说明将在后面叙述。Also, in the present embodiment, the phosphor plate 130 may be formed to have a width greater than that of the light emitting diode chip 120 . A detailed description of this will be described later.

荧光体板130在如此大于发光二极管芯片120宽度地形成的状态下,贴装于发光二极管芯片120上。Phosphor plate 130 is mounted on light emitting diode chip 120 in a state formed to be larger than the width of light emitting diode chip 120 in this way.

壁部140形成得包围贴装了荧光体板130的发光二极管芯片120并覆盖基板110上部。壁部140可以以不透明的硅等形成,在本实施例中,可以以白色形成。另外,壁部140包围发光二极管芯片120侧面地形成,因而可以包括能够反射发光二极管芯片120释放的光的颗粒。The wall portion 140 is formed to surround the light emitting diode chip 120 on which the phosphor plate 130 is mounted, and to cover the upper portion of the substrate 110 . The wall portion 140 may be formed of opaque silicon or the like, and may be formed of white in this embodiment. In addition, the wall portion 140 is formed to surround the side surface of the LED chip 120 , and thus may include particles capable of reflecting light emitted from the LED chip 120 .

此时,壁部140为了防止在发光二极管芯片120上贴装的荧光体板130从发光二极管芯片120分离,可以形成得包围至荧光体板130的侧面一部分。即,壁部140可以在荧光体板130贴装于发光二极管芯片120上的状态下形成。At this time, the wall portion 140 may be formed to surround a part of the side surface of the phosphor plate 130 in order to prevent the phosphor plate 130 mounted on the light emitting diode chip 120 from being separated from the light emitting diode chip 120 . That is, the wall portion 140 may be formed in a state where the phosphor plate 130 is attached to the light emitting diode chip 120 .

其中,在荧光体板130的宽度大于发光二极管芯片120宽度地形成的状态下形成壁部140的过程中,在荧光体板130、发光二极管芯片120及壁部140之间可以形成间隙G(gap)。间隙G如图2所示,在荧光体板130贴装于发光二极管芯片120上部的状态下,可以在超出发光二极管芯片120外侧的荧光体板130的下部形成。即,壁部140形成得包括荧光体板130的一部分在内,包围发光二极管芯片120的侧面,不把壁部140填充至荧光体板130与发光二极管芯片120相接的界线,因而可以形成间隙G。因此,间隙G可以以包围发光二极管芯片120外周面至少一部分的形状形成。Wherein, in the process of forming the wall portion 140 in the state where the width of the phosphor plate 130 is larger than that of the LED chip 120, a gap G (gap) may be formed between the phosphor plate 130, the LED chip 120, and the wall portion 140. ). As shown in FIG. 2 , the gap G may be formed at the lower portion of the phosphor plate 130 beyond the outside of the LED chip 120 when the phosphor plate 130 is mounted on the upper portion of the LED chip 120 . That is, the wall portion 140 is formed to surround the side surface of the light-emitting diode chip 120 including a part of the phosphor plate 130, and the wall portion 140 is not filled to the boundary between the phosphor plate 130 and the light-emitting diode chip 120, so that a gap can be formed. g. Therefore, the gap G may be formed in a shape surrounding at least a part of the outer peripheral surface of the light emitting diode chip 120 .

随着如此在荧光体板130、发光二极管芯片120及壁部140之间形成间隙G,发光二极管芯片120发光的光可以释放到在发光二极管芯片120的侧面侧形成的间隙G,释放到间隙G的光在壁部140反射,可以向荧光体板130侧(即,发光二极管封装体100的上部)方向反射。即,包围间隙G的壁部140的面可以为反射面140a。With the gap G formed between the phosphor plate 130, the LED chip 120, and the wall portion 140 in this way, the light emitted by the LED chip 120 can be released into the gap G formed on the side surface of the LED chip 120, and released into the gap G. The light reflected by the wall portion 140 may be reflected toward the phosphor plate 130 side (that is, the upper portion of the light emitting diode package 100 ). That is, the surface of the wall portion 140 surrounding the gap G may be the reflective surface 140a.

另外,间隙G形成得包围发光二极管芯片120外周面的至少一部分,正如前面所作的说明,间隙G以空的空间形成,因而光从发光二极管芯片120向间隙G侧释放的同时,同时会随着介质变化而折射。因此,由于折射率的差异,可以提高在反射面140a的光的功率。In addition, the gap G is formed to surround at least a part of the outer peripheral surface of the light emitting diode chip 120. As described above, the gap G is formed as an empty space, so light is emitted from the light emitting diode chip 120 to the side of the gap G and simultaneously The medium changes and refracts. Therefore, the power of light at the reflective surface 140a can be increased due to the difference in refractive index.

进一步地,用于把荧光体板130粘合于发光二极管芯片120的粘合构件利用透明材质,因而借助于粘合构件的折射率和与间隙G的折射率,可以提高在反射面140a反射的光的功率。Further, the bonding member used to bond the phosphor plate 130 to the LED chip 120 is made of a transparent material, so by means of the refractive index of the bonding member and the refractive index of the gap G, the reflection on the reflective surface 140a can be improved. the power of light.

其中,间隙G的形状随着壁部140的形成而形成,根据壁部140在覆盖荧光体板130侧面一部分的状态下包围发光二极管芯片120侧面的程度,间隙G的大小及形状会不同。作为包围间隙G的壁部140的面的反射面140a如图2所示,可以以向发光二极管芯片120方向凸出的形状形成。当然,在本实施例中,虽然图示了反射面140a以凸出的形状形成,但反射面140a的形状可以根据需要而变形。The shape of the gap G is formed with the formation of the wall portion 140 , and the size and shape of the gap G vary depending on the extent to which the wall portion 140 surrounds the side surface of the LED chip 120 while covering a part of the side surface of the phosphor plate 130 . The reflective surface 140 a that is the surface of the wall portion 140 surrounding the gap G may be formed in a shape that protrudes toward the light emitting diode chip 120 as shown in FIG. 2 . Of course, in this embodiment, although it is shown that the reflective surface 140a is formed in a convex shape, the shape of the reflective surface 140a may be deformed as required.

作为一个示例,当在汽车大灯中应用本实施例的发光二极管封装体100时,汽车大灯根据关于配光分布的规定而制造,因而发光二极管封装体100也需要据此制造。本实施例的发光二极管封装体100正如上述所作的说明,形成得发光二极管芯片120的侧面被壁部140包围,间隙G包围发光二极管芯片120外周面,因而发光二极管芯片120发光的光只能向发光二极管芯片120的上部释放。因此,如本实施例所示,发光二极管封装体100发光的光只向上部释放,因而能够有利于设计光学元件,使得满足汽车大灯的配光分布规定。As an example, when the LED package 100 of this embodiment is applied to an automobile headlight, the automobile headlight is manufactured according to regulations on light distribution, so the LED package 100 also needs to be manufactured accordingly. The light-emitting diode package 100 of this embodiment is just as described above, the side surface of the light-emitting diode chip 120 is formed to be surrounded by the wall portion 140, and the gap G surrounds the outer peripheral surface of the light-emitting diode chip 120, so the light emitted by the light-emitting diode chip 120 can only go to The upper part of the LED chip 120 is released. Therefore, as shown in this embodiment, the light emitted by the light emitting diode package 100 is released only to the upper part, which can facilitate the design of optical elements so as to meet the light distribution requirements of automobile headlights.

透镜150可以在基板110的上部形成。透镜150的形状可以根据需要而以多样的形状形成,在本实施例中,透镜150可以包括:板部152,其以具有与基板110相同宽度的四边形状形成;圆顶部154,其在板部152上部,如同圆顶形状一样,为形成球的一部分的形状。因此,透镜150可以形成得覆盖在基板110的上部形成的荧光体板130和壁部140。A lens 150 may be formed on an upper portion of the substrate 110 . The shape of the lens 150 can be formed in various shapes according to needs. In the present embodiment, the lens 150 can include: a plate portion 152 formed in a quadrangular shape with the same width as the substrate 110; 152 The upper part, like the dome shape, is shaped to form part of a ball. Accordingly, the lens 150 may be formed to cover the phosphor plate 130 and the wall part 140 formed on the upper portion of the substrate 110 .

此时,透镜150的圆顶部154可以只在荧光体板130上部形成,根据需要,圆顶部154的宽度可以大于荧光体板130宽度地形成。板部152可以覆盖基板110全体地形成,但在本实施例中,板部152也可以形成得覆盖壁部140的上部一部分,所述壁部140形成得覆盖基板110上部。At this time, the dome portion 154 of the lens 150 may be formed only on the upper portion of the phosphor plate 130 , and the width of the dome portion 154 may be larger than that of the phosphor plate 130 as needed. The plate portion 152 may be formed to cover the entire substrate 110 , but in this embodiment, the plate portion 152 may also be formed to cover an upper part of the wall portion 140 formed to cover the upper portion of the substrate 110 .

因此,发光二极管芯片120通过荧光体板130释放的光,可以通过圆顶部154的出射面而大部分释放到外部,但根据情况,会有从圆顶部154出射面的内侧反射到基板110侧的光。为了使如此反射的光再次反射到圆顶部154的出射面侧,壁部140可以覆盖基板110全体地形成。此时,壁部140即使不覆盖基板110全体地形成,也可以大于圆顶部154宽度地形成,从壁部140再反射的光可以通过圆顶部154射出到外部。或者,壁部140也可以大于板部152地形成,壁部140露出到板152的外部。Therefore, the light emitted by the light emitting diode chip 120 through the phosphor plate 130 can be mostly released to the outside through the emission surface of the dome 154, but depending on the situation, there may be reflection from the inside of the emission surface of the dome 154 to the substrate 110 side. Light. The wall portion 140 may be formed to cover the entire substrate 110 in order to reflect the light reflected in this way to the exit surface side of the dome portion 154 again. In this case, the wall portion 140 may be formed to be larger than the width of the dome portion 154 without covering the entire substrate 110 , and the light rereflected from the wall portion 140 may be emitted to the outside through the dome portion 154 . Alternatively, the wall portion 140 may be formed larger than the plate portion 152 so that the wall portion 140 is exposed to the outside of the plate 152 .

其中,透镜150中包括的板部152和圆顶部154可以一体形成。Wherein, the plate portion 152 and the dome portion 154 included in the lens 150 may be integrally formed.

图3是用于说明本实用新型一个实施例的发光二极管封装体的把荧光体板贴装于发光二极管芯片的情形的图。FIG. 3 is a diagram for explaining a state of attaching a phosphor plate to a light-emitting diode chip of the light-emitting diode package according to an embodiment of the present invention.

在本实施例中,发光二极管封装体100正如上述所作的说明,在发光二极管芯片120贴装于基板110上部的状态下,荧光体板130可以贴装于发光二极管芯片120的上部。此时,荧光体板130应覆盖发光二极管芯片120全体地形成。In this embodiment, the LED package 100 is as described above, in the state where the LED chip 120 is mounted on the upper portion of the substrate 110 , the phosphor plate 130 can be mounted on the upper portion of the LED chip 120 . At this time, the phosphor plate 130 should be formed so as to cover the entire light emitting diode chip 120 .

因此,当把另行制作的荧光体板130贴装于发光二极管芯片120上部时,如果荧光体板130与发光二极管芯片120具有相同的宽度,则有必要把荧光体板130准确地排列于发光二极管芯片120上部进行贴装。但是,由于把荧光体板130准确排列于发光二极管芯片120上部进行贴装并不容易,因而荧光体板130的宽度有必要大于发光二极管芯片120宽度地形成。Therefore, when attaching the phosphor plate 130 manufactured separately on the top of the LED chip 120, if the phosphor plate 130 and the LED chip 120 have the same width, it is necessary to accurately arrange the phosphor plate 130 on the LED chip 120. Mounting is performed on the top of the chip 120 . However, since it is not easy to accurately arrange and mount the phosphor plates 130 on the top of the LED chips 120 , the width of the phosphor plates 130 must be larger than that of the LED chips 120 .

因此,荧光板如图3的(a)所示,可以以在基板110上形成的对齐点A为基准,贴装于发光二极管芯片120上部。此时,在发光二极管芯片120贴装于基板110的正确位置的状态下,如果贴装荧光体板130,则如图3的(b)所示,可以配置使得发光二极管芯片120与荧光体板130的中心一致。Therefore, as shown in (a) of FIG. 3 , the fluorescent plate can be mounted on the upper part of the LED chip 120 based on the alignment point A formed on the substrate 110 . At this time, in the state where the light-emitting diode chip 120 is mounted on the correct position of the substrate 110, if the phosphor plate 130 is mounted, as shown in FIG. The center of 130 coincides.

可是,即使发光二极管芯片120未贴装于基板110的正确位置,而是稍稍错开地贴装,如图3的(c)所示,荧光体板130也可以覆盖发光二极管芯片120全体地贴装。此时,可以以发光二极管芯片120与荧光体板130的中心不一致的状态配置。另外,即使在发光二极管芯片120贴装于正确位置的情况下,如果荧光体板130未贴装于正确位置,那么,发光二极管芯片120与荧光体板130的中心也会不一致。尽管如此,荧光体板130大于发光二极管芯片120地形成,可以覆盖发光二极管芯片120全体地贴装即可。However, even if the light-emitting diode chip 120 is not mounted on the correct position of the substrate 110, but is slightly staggered, as shown in FIG. . At this time, the light emitting diode chip 120 may be arranged in a state where the centers of the phosphor plate 130 do not coincide with each other. In addition, even if the LED chip 120 is mounted at the correct position, if the phosphor plate 130 is not mounted at the correct position, the centers of the light emitting diode chip 120 and the phosphor plate 130 will not coincide. However, phosphor plate 130 may be formed larger than light emitting diode chip 120 , and may be mounted so as to cover entire light emitting diode chip 120 .

其中,荧光体板130不是按用于发光二极管封装体100的大小而独立地制作一个,而是可以截断相对较大地制作的荧光体板130进行制造。因此,截断的荧光体板130的宽度会发生既定的公差。另外,就发光二极管芯片120而言,由于发生既定的公差,宽度可能会不固定。因此,如上所述,荧光体板130的宽度比发光二极管芯片120的宽度相对较大地制作,可以使得荧光体板130覆盖发光二极管芯片120的上面全体。因此,能够防止发光二极管芯片120发光的光以不经过荧光体板130的状态释放到外部。Here, instead of manufacturing one phosphor plate 130 independently according to the size used in the light emitting diode package 100 , the phosphor plate 130 produced relatively large can be cut and manufactured. Therefore, a predetermined tolerance occurs in the width of the truncated phosphor plate 130 . In addition, for the light emitting diode chip 120 , the width may not be fixed due to predetermined tolerances. Therefore, as described above, the width of the phosphor plate 130 is made relatively larger than the width of the light emitting diode chip 120 so that the phosphor plate 130 can cover the entire upper surface of the light emitting diode chip 120 . Therefore, it is possible to prevent the light emitted from the light emitting diode chip 120 from being released to the outside without passing through the phosphor plate 130 .

另外,以上对在发光二极管芯片120首先贴装于基板110的状态下,荧光体板130配置于发光二极管芯片120上部的情形进行了说明,但在荧光体板130配置于发光二极管芯片120上部的状态下,发光二极管芯片120也可以贴装于基板110上。这是因为,制造工序可以根据制造本实施例的发光二极管封装体100的工序而异。In addition, above, the case where the phosphor plate 130 is arranged on the top of the light emitting diode chip 120 in the state where the light emitting diode chip 120 is first mounted on the substrate 110 has been described. In this state, the LED chip 120 can also be mounted on the substrate 110 . This is because the manufacturing process may vary according to the manufacturing process of the light emitting diode package 100 of this embodiment.

正如上面所作的说明,根据参照了附图的实施例,进行了对本实用新型的具体说明,但所述实施例只是举出本实用新型的优选示例进行说明,因而不得理解为本实用新型局限于所述实施例,本实用新型的权利范围应理解为技术方案及其等价的概念。As described above, according to the embodiment with reference to the accompanying drawings, the utility model has been specifically described, but the embodiment is only a preferred example of the utility model for illustration, so it should not be understood that the utility model is limited to The embodiments and the scope of rights of the present utility model should be understood as technical solutions and their equivalent concepts.

Claims (17)

1.一种发光二极管封装体,其特征在于,包括:1. A light-emitting diode package, characterized in that, comprising: 基板;Substrate; 贴装于所述基板上的一个以上的发光二极管芯片;More than one LED chip mounted on the substrate; 荧光体板,其配置于所述一个以上的发光二极管芯片上,对所述一个以上的发光二极管芯片发光的光进行波长变换;及A phosphor plate, which is arranged on the one or more light-emitting diode chips, and performs wavelength conversion on the light emitted by the one or more light-emitting diode chips; and 壁部,其配置于所述基板上,包围所述一个以上的发光二极管芯片;a wall portion, which is disposed on the substrate and surrounds the one or more light emitting diode chips; 所述荧光体板覆盖所述一个以上的发光二极管芯片的整个上面,The phosphor plate covers the entire upper surface of the one or more LED chips, 所述荧光体板的宽度大于所述一个以上的发光二极管芯片的宽度。The width of the phosphor plate is greater than the width of the one or more LED chips. 2.根据权利要求1所述的发光二极管封装体,其特征在于:2. The LED package according to claim 1, characterized in that: 所述壁部覆盖所述一个以上的发光二极管芯片的侧面中至少一者的一部分。The wall portion covers a part of at least one of side surfaces of the one or more light emitting diode chips. 3.根据权利要求1所述的发光二极管封装体,其特征在于:3. The LED package according to claim 1, characterized in that: 所述壁部覆盖所述荧光体板的侧面中至少一者的一部分。The wall part covers a part of at least one of the sides of the phosphor plate. 4.根据权利要求3所述的发光二极管封装体,其特征在于:4. The LED package according to claim 3, characterized in that: 所述壁部覆盖所述发光二极管芯片的侧面中至少一者的一部分使得形成被所述荧光体板、发光二极管芯片及壁部包围的间隙。The wall portion covers a part of at least one side surface of the LED chip so as to form a gap surrounded by the phosphor plate, the LED chip, and the wall portion. 5.根据权利要求4所述的发光二极管封装体,其特征在于:5. The LED package according to claim 4, characterized in that: 所述间隙包围所述发光二极管芯片的外周面的至少一部分。The gap surrounds at least a part of the outer peripheral surface of the LED chip. 6.根据权利要求4所述的发光二极管封装体,其特征在于:6. The LED package according to claim 4, characterized in that: 包围所述间隙的壁部的内侧面为反射面。The inner surface of the wall surrounding the gap is a reflective surface. 7.根据权利要求6所述的发光二极管封装体,其特征在于:7. The LED package according to claim 6, characterized in that: 所述反射面具有向所述发光二极管芯片的方向凸出的形状。The reflective surface has a shape protruding toward the direction of the LED chip. 8.根据权利要求1所述的发光二极管封装体,其特征在于:8. The LED package according to claim 1, characterized in that: 所述荧光体板包含一种以上的荧光体。The phosphor plate contains one or more phosphors. 9.根据权利要求1所述的发光二极管封装体,其特征在于:9. The LED package according to claim 1, characterized in that: 所述荧光体板的中心与所述发光二极管芯片的中心一致。The center of the phosphor plate coincides with the center of the LED chip. 10.根据权利要求1所述的发光二极管封装体,其特征在于:10. The LED package according to claim 1, characterized in that: 所述荧光体板的中心偏离所述发光二极管芯片的中心。The center of the phosphor plate deviates from the center of the LED chip. 11.根据权利要求1所述的发光二极管封装体,其特征在于:11. The LED package according to claim 1, characterized in that: 所述基板包括用于排列所述荧光体板的对齐点。The substrate includes alignment points for aligning the phosphor panels. 12.根据权利要求1所述的发光二极管封装体,其特征在于,所述基板包括:12. The LED package according to claim 1, wherein the substrate comprises: 基底;base; 第一引线及第二引线,其形成于所述基底的上面,与所述一个以上的发光二极管芯片电连接;及a first lead and a second lead formed on the substrate and electrically connected to the one or more LED chips; and 第一基板垫及第二基板垫,其形成于所述基底的下面,分别与所述第一引线及第二引线电连接。The first substrate pad and the second substrate pad are formed under the base and are electrically connected to the first lead and the second lead respectively. 13.根据权利要求12所述的发光二极管封装体,其特征在于:13. The LED package according to claim 12, characterized in that: 所述基板还包括第一通孔及第二通孔,所述第一通孔及第二通孔贯通所述基底,使所述第一引线及第二引线分别与所述第一基板垫及第二基板垫电连接。The substrate also includes a first through hole and a second through hole, the first through hole and the second through hole penetrate the base, so that the first lead and the second lead are connected to the first substrate pad and the second lead respectively. The second substrate pads are electrically connected. 14.根据权利要求12所述的发光二极管封装体,其特征在于:14. The LED package according to claim 12, characterized in that: 所述基板还包括在所述基底的下面对所述发光二极管芯片发生的热进行散热的散热垫。The substrate further includes a heat dissipation pad for dissipating heat generated by the light emitting diode chip under the base. 15.根据权利要求1所述的发光二极管封装体,其特征在于,还包括:15. The LED package according to claim 1, further comprising: 透镜,其在所述基板的上部覆盖所述发光二极管芯片,使所述发光二极管芯片发光的光射出。The lens covers the light-emitting diode chip on the upper part of the substrate, and emits the light emitted by the light-emitting diode chip. 16.根据权利要求15所述的发光二极管封装体,其特征在于,所述透镜包括:16. The LED package according to claim 15, wherein the lens comprises: 板部,其覆盖所述发光二极管芯片;及a plate portion covering the light emitting diode chip; and 圆顶部,其形成于所述板部的上部,使所述发光二极管芯片发光的光射出到外部。The dome portion is formed on the upper portion of the plate portion, and emits the light emitted by the light emitting diode chip to the outside. 17.根据权利要求16所述的发光二极管封装体,其特征在于:17. The LED package according to claim 16, characterized in that: 所述壁部的宽度大于所述圆顶部的宽度。The width of the wall portion is greater than the width of the dome.
CN201620261736.9U 2016-03-31 2016-03-31 Encapsulation body of LED Expired - Fee Related CN205542882U (en)

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