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CN205789112U - Circuit board and memory using the circuit board - Google Patents

Circuit board and memory using the circuit board Download PDF

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Publication number
CN205789112U
CN205789112U CN201620085300.9U CN201620085300U CN205789112U CN 205789112 U CN205789112 U CN 205789112U CN 201620085300 U CN201620085300 U CN 201620085300U CN 205789112 U CN205789112 U CN 205789112U
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circuit board
heat dissipation
heat dissipating
dissipating layer
memory
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张丽丽
陈任佳
刘现亭
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Shenzhen Jiahejingwei Electronic Technology Ltd
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Shenzhen Jiahejingwei Electronic Technology Ltd
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Abstract

The utility model provides a memory of circuit board and applied this circuit board. The circuit board comprises a first surface and a second surface which are opposite in parallel, the first surface and the second surface are connected through side surfaces, the circuit board further comprises a first heat dissipation layer arranged on the first surface and a second heat dissipation layer arranged on the second surface, and the first heat dissipation layer and the second heat dissipation layer comprise a plurality of heat dissipation holes. Through the heat dissipation layer and the heat dissipation holes, heat in the circuit board can be rapidly discharged to reduce the temperature of the circuit board. The utility model also provides a memory of using this circuit board.

Description

电路板及应用该电路板的存储器Circuit board and memory using the circuit board

技术领域technical field

本实用新型涉及一种电路板,还涉及一种应用该电路板的存储器。The utility model relates to a circuit board, and also relates to a memory using the circuit board.

背景技术Background technique

现有的PCB内层的散热效率通常较低。以内存条为例,在内存条高频率工作时内存条PCB中大量热量聚集无法迅速排出,内存条温度会迅速上升。当内存条温度上升到临界值时,内存条将无法继续维持高频率工作状态。The heat dissipation efficiency of existing PCB inner layers is generally low. Taking the memory stick as an example, when the memory stick works at a high frequency, a large amount of heat accumulated in the memory stick PCB cannot be quickly discharged, and the temperature of the memory stick will rise rapidly. When the temperature of the memory stick rises to a critical value, the memory stick will no longer be able to maintain a high-frequency working state.

实用新型内容Utility model content

鉴于此,有必要提供一种可提供迅速散热的电路板及应用该电路板的存储器。In view of this, it is necessary to provide a circuit board that can provide rapid heat dissipation and a memory using the circuit board.

一种电路板,包括平行相对的第一表面及第二表面,所述第一表面及第二表面通过侧表面连接,所述电路板还包括设于第一表面的第一散热层及设于第二表面的第二散热层,所述第一散热层及第二散热层包括若干散热孔。A circuit board, comprising a first surface and a second surface parallel to each other, the first surface and the second surface are connected through a side surface, and the circuit board also includes a first heat dissipation layer arranged on the first surface and a The second heat dissipation layer on the second surface, the first heat dissipation layer and the second heat dissipation layer include a plurality of heat dissipation holes.

优选地,所述第一表面包括第一散热区及第一元器件区,所述第一散热层设于所述第一散热区。Preferably, the first surface includes a first heat dissipation area and a first component area, and the first heat dissipation layer is disposed on the first heat dissipation area.

优选地,所述第一散热区及第一元器件区之间设有第一隔离槽。Preferably, a first isolation groove is provided between the first heat dissipation area and the first component area.

优选地,所述第一散热层为铜箔,当所述电路板进行蚀刻时,所述第一散热层所处区域铜箔未经蚀刻形成所述第一散热层。Preferably, the first heat dissipation layer is copper foil, and when the circuit board is etched, the copper foil in the area where the first heat dissipation layer is located is not etched to form the first heat dissipation layer.

优选地,所述若干散热孔包括至少一通孔。Preferably, the plurality of cooling holes include at least one through hole.

一种存储器,包括一电路板及若干存储芯片,所述电路板包括平行相对的第一表面及第二表面,所述第一表面及第二表面通过侧 表面连接,所述电路板还包括设于第一表面的第一散热层及设于第二表面的第二散热层,所述第一散热层及第二散热层包括若干散热孔。A memory, including a circuit board and a plurality of memory chips, the circuit board includes a first surface and a second surface parallel to each other, the first surface and the second surface are connected by a side surface, the circuit board also includes a device The first heat dissipation layer on the first surface and the second heat dissipation layer on the second surface, the first heat dissipation layer and the second heat dissipation layer include some heat dissipation holes.

优选地,所述存储器包括若干散热端,所述若干存储芯片的引脚对应连接所述若干散热端。Preferably, the memory includes several heat dissipation terminals, and the pins of the plurality of memory chips are correspondingly connected to the several heat dissipation terminals.

优选地,所述第一表面包括第一隔离槽,所述第一散热层设置于所述第一隔离槽的第二侧,所述若干散热端设置于所述第一隔离槽的第一侧,所述若干散热端与所述第一隔离槽的距离不大于第一预设距离。Preferably, the first surface includes a first isolation groove, the first heat dissipation layer is arranged on the second side of the first isolation groove, and the plurality of heat dissipation ends are arranged on the first side of the first isolation groove , the distance between the plurality of cooling ends and the first isolation slot is not greater than a first preset distance.

优选地,所述存储器包括一散热器及一接口,所述接口位于所述存储器的第一端,所述散热器用于可拆卸地套接于所述存储器的第二端。Preferably, the storage includes a heat sink and an interface, the interface is located at the first end of the storage, and the heat sink is used to be detachably socketed on the second end of the storage.

优选地,所述散热器紧贴连接于所述若干存储芯片、所述第一散热层及所述第二散热层。Preferably, the heat sink is closely connected to the plurality of memory chips, the first heat dissipation layer and the second heat dissipation layer.

通过所述散热层及散热孔,电路板中的热量可以迅速排出以降低电路板温度。Through the heat dissipation layer and the heat dissipation holes, the heat in the circuit board can be quickly discharged to reduce the temperature of the circuit board.

附图说明Description of drawings

图1为本实用新型电路板的较佳实施方式的示意图。FIG. 1 is a schematic diagram of a preferred embodiment of the circuit board of the present invention.

图2为图1中所述电路板的较佳实施方式的剖视图。FIG. 2 is a cross-sectional view of a preferred embodiment of the circuit board shown in FIG. 1 .

图3为本实用新型存储器的较佳实施方式的示意图。FIG. 3 is a schematic diagram of a preferred embodiment of the storage device of the present invention.

图4为本实用新型存储器的较佳实施方式的另一示意图。FIG. 4 is another schematic diagram of a preferred embodiment of the storage device of the present invention.

图5为本实用新型存储器的另一较佳实施方式的局部示意图。FIG. 5 is a partial schematic diagram of another preferred embodiment of the storage device of the present invention.

主要元件符号说明Explanation of main component symbols

如下具体实施方式将结合上述附图进一步说明本实用新型。The following specific embodiments will further illustrate the utility model in conjunction with the above-mentioned accompanying drawings.

具体实施方式detailed description

请参考图1及图2,本实用新型电路板100的较佳实施方式中,所述电路板100包括平行相对的第一表面11及第二表面12,所述第一表面11及第二表面12通过侧表面13连接。所述电路板100还包括设于第一表面11的第一散热层110及设于第二表面12的第二散热层120。所述第一散热层110包括若干散热孔21。所述第二散热层120包括若干散热孔。Please refer to FIG. 1 and FIG. 2 , in a preferred embodiment of the circuit board 100 of the present invention, the circuit board 100 includes a first surface 11 and a second surface 12 opposite to each other in parallel, and the first surface 11 and the second surface 12 are connected by side surfaces 13 . The circuit board 100 further includes a first heat dissipation layer 110 disposed on the first surface 11 and a second heat dissipation layer 120 disposed on the second surface 12 . The first heat dissipation layer 110 includes a plurality of heat dissipation holes 21 . The second heat dissipation layer 120 includes several heat dissipation holes.

本实施方式中,所述电路板100的第一表面11包括第一散热区 31及第一元器件区41。所述第一散热区31及第一元器件区41之间设有第一隔离槽51。所述第一散热层110设于所述第一散热区31。In this embodiment, the first surface 11 of the circuit board 100 includes a first heat dissipation area 31 and a first component area 41. A first isolation groove 51 is provided between the first heat dissipation area 31 and the first component area 41 . The first heat dissipation layer 110 is disposed on the first heat dissipation area 31 .

本实施方式中,所述电路板100的第二表面12包括第二散热区32(未示出)及第二元器件区42(未示出)。所述第二散热区32及第二元器件区42之间设有第二隔离槽52。所述第二散热层120设于所述第二散热区32。由于在本实施方式中所述第二表面12与所述第一表面11呈对称设计,所述第二散热区32、第二元器件区42及第二隔离槽52未在图中示出。In this embodiment, the second surface 12 of the circuit board 100 includes a second heat dissipation area 32 (not shown) and a second component area 42 (not shown). A second isolation groove 52 is provided between the second heat dissipation area 32 and the second component area 42 . The second heat dissipation layer 120 is disposed on the second heat dissipation area 32 . Since the second surface 12 and the first surface 11 are designed symmetrically in this embodiment, the second heat dissipation area 32 , the second component area 42 and the second isolation groove 52 are not shown in the figure.

在其他实施方式中,所述第一散热层110可以呈不规则形状设于所述电路板100的所述第一表面11上,例如第一元器件区41各焊盘周围,而不需要局限于第一散热区31。类似地,所述第二散热层120可以呈不规则形状设于所述电路板100的所述第二表面12上,例如第二元器件区42的各焊盘周围,而不需要局限于第二散热区32。In other embodiments, the first heat dissipation layer 110 may be arranged on the first surface 11 of the circuit board 100 in an irregular shape, such as around each solder pad of the first component region 41, without limitation. In the first cooling zone 31. Similarly, the second heat dissipation layer 120 can be arranged on the second surface 12 of the circuit board 100 in an irregular shape, such as around each solder pad of the second component area 42, without being limited to the first Two heat dissipation zones 32 .

在其他实施方式中,所述第一散热层110与所述第二散热层120可以为非对称设计。In other implementations, the first heat dissipation layer 110 and the second heat dissipation layer 120 may have an asymmetric design.

本实施方式中,所述第一隔离槽51及第二隔离槽52用于防止散热层与焊盘接触。In this embodiment, the first isolation groove 51 and the second isolation groove 52 are used to prevent the heat dissipation layer from contacting the pad.

图2为本实用新型电路板100的截面示意图。本实施方式中,所述电路板100包括第一层61、第二层62及中间层60。FIG. 2 is a schematic cross-sectional view of the circuit board 100 of the present invention. In this embodiment, the circuit board 100 includes a first layer 61 , a second layer 62 and an intermediate layer 60 .

本实施方式中,所述第一层61为铜箔层,所述第二层62为基材层,所述中间层60为内膜层。所述中间层60可由树脂、环氧玻璃纤维等材料制成。In this embodiment, the first layer 61 is a copper foil layer, the second layer 62 is a substrate layer, and the intermediate layer 60 is an inner film layer. The middle layer 60 can be made of resin, epoxy glass fiber and other materials.

本实施方式中,所述若干散热孔21均为通孔。所述若干散热孔21依次贯穿所述第一散热层110、所述第一层61、所述中间层60、所述第二层62及所述第二散热层120。In this embodiment, the plurality of cooling holes 21 are all through holes. The plurality of heat dissipation holes 21 sequentially pass through the first heat dissipation layer 110 , the first layer 61 , the middle layer 60 , the second layer 62 and the second heat dissipation layer 120 .

在其他实施方式中,所述第一散热层110为铜箔,当对电路板铜箔蚀刻时,所述第一散热层110所处区域铜箔未经蚀刻形成所述第一散热层110,所述第一散热层110与所述第一元器件区41之走 线通过所述第一隔离槽51进行分割,以避免信号干扰。类似地,所述第二散热层120可以由铜箔层未经蚀刻形成,所述第二散热层120与所述第二元器件区42之走线通过所述第二隔离槽52进行分割,以避免信号干扰。In other embodiments, the first heat dissipation layer 110 is copper foil, and when the copper foil of the circuit board is etched, the copper foil in the area where the first heat dissipation layer 110 is located is not etched to form the first heat dissipation layer 110, The wiring between the first heat dissipation layer 110 and the first component area 41 is separated by the first isolation groove 51 to avoid signal interference. Similarly, the second heat dissipation layer 120 can be formed by copper foil layer without etching, and the wiring between the second heat dissipation layer 120 and the second component area 42 is divided by the second isolation groove 52 , to avoid signal interference.

相应地,若所述第一散热层110及第二散热层120由铜箔层未经蚀刻形成,所述第一散热层110及第二散热层120可以应用于多层电路板的内层。Correspondingly, if the first heat dissipation layer 110 and the second heat dissipation layer 120 are formed by copper foil without etching, the first heat dissipation layer 110 and the second heat dissipation layer 120 can be applied to inner layers of a multilayer circuit board.

本实施方式中,所述第一元器件区41之走线均有一端位于所述第一隔离槽51附近。类似地,所述第二元器件区42之走线均有一端位于所述第二隔离槽52附近。In this embodiment, one end of the wires in the first component region 41 is located near the first isolation trench 51 . Similarly, one end of the wires in the second component area 42 is located near the second isolation trench 52 .

在其他实施方式中,所述若干散热孔21可以灌有特定金属以协助散热,所述特定金属包括但不限于铜。In other embodiments, the plurality of heat dissipation holes 21 may be filled with specific metals to assist heat dissipation, and the specific metals include but not limited to copper.

在其他实施方式中,所述若干散热孔21可以部分为通孔,部分为开孔至特定位置。所述若干散热孔21还可全部开孔至特定位置,如全部开孔至中间层60而不贯穿所述中间层60。In other embodiments, the plurality of cooling holes 21 may be partly through holes, and partly be holes opened to specific positions. The plurality of cooling holes 21 can also all be opened to a specific position, such as all opened to the middle layer 60 without penetrating through the middle layer 60 .

请参考图3及图4,本实用新型存储器200包括一多层电路板及若干存储芯片71。所述多层电路板的一种较佳实施方式中所述多层电路板包括所述电路板100。所述存储器200还包括一接口81及一散热器300。所述接口81位于所述存储器200的第一端。Please refer to FIG. 3 and FIG. 4 , the memory 200 of the present invention includes a multi-layer circuit board and a plurality of memory chips 71 . In a preferred embodiment of the multilayer circuit board, the multilayer circuit board includes the circuit board 100 . The memory 200 also includes an interface 81 and a heat sink 300 . The interface 81 is located at the first end of the memory 200 .

本实施方式中,所述散热器300可拆卸地套接于所述存储器200的第二端。当所述散热器300套接于所述存储器200的第二端时,所述散热器300紧贴连接于所述若干存储芯片71、所述第一散热层110及所述第二散热层120。所述散热器300用于针对第一散热层110、所述第二散热层120及所述若干存储芯片71进行散热。In this embodiment, the heat sink 300 is detachably socketed on the second end of the storage device 200 . When the heat sink 300 is socketed on the second end of the memory 200, the heat sink 300 is closely connected to the plurality of memory chips 71, the first heat dissipation layer 110 and the second heat dissipation layer 120. . The heat sink 300 is used to dissipate heat for the first heat dissipation layer 110 , the second heat dissipation layer 120 and the plurality of memory chips 71 .

本实施方式中,所述存储器200的第一端与所述存储器200的第二端平行。In this embodiment, the first end of the memory 200 is parallel to the second end of the memory 200 .

在其他实施方式中,所述散热器300还可以套接于所述存储器200的第三端。所述存储器200的第三端与所述存储器200的第一端垂直。In other implementation manners, the heat sink 300 can also be socketed on the third end of the memory 200 . The third end of the memory 200 is perpendicular to the first end of the memory 200 .

在其他实施方式中,所述散热器300还可以焊接于所述第一散热层110或第二散热层120上。In other implementation manners, the heat sink 300 may also be welded on the first heat dissipation layer 110 or the second heat dissipation layer 120 .

所述散热器300可由金属材料或其他拥有良好导热性材料制成。本实施方式中,所述散热器300的制作材料为铝。The heat sink 300 can be made of metal material or other materials with good thermal conductivity. In this embodiment, the heat sink 300 is made of aluminum.

本实施方式中,所述存储器200为一内存条。所述接口81为所述电路板100的第一端延伸出的金手指。所述接口81用于连接一内存插槽。In this embodiment, the memory 200 is a memory stick. The interface 81 is a gold finger extending from the first end of the circuit board 100 . The interface 81 is used to connect a memory slot.

请参考图5,本实用新型所述存储器200的另一较佳实施方式中,所述存储器200包括一多层电路板(未示出)及至少一存储芯片91。所述多层电路板的的第一表面包括第一隔离槽51、接口81、第一散热层110及散热端A1-A8。所述第一隔离槽51处于所述第一散热层110及所述散热端A1-A8之间。所述存储芯片91包括引脚1-8。所述存储芯片91的引脚1连接于所述接口81的引脚1。所述存储芯片91的引脚2连接于所述接口81的引脚2。所述存储芯片91的引脚3连接于所述接口81的引脚3。所述存储芯片91的引脚4连接于所述接口81的引脚4。所述存储芯片91的引脚5连接于所述接口81的引脚5。所述存储芯片91的引脚6连接于所述接口81的引脚6。所述存储芯片91的引脚7连接于所述接口81的引脚7。所述存储芯片91的引脚8连接于所述接口81的引脚8。Please refer to FIG. 5 , in another preferred implementation manner of the memory 200 of the present invention, the memory 200 includes a multi-layer circuit board (not shown) and at least one memory chip 91 . The first surface of the multilayer circuit board includes a first isolation groove 51 , an interface 81 , a first heat dissipation layer 110 and heat dissipation terminals A1 - A8 . The first isolation groove 51 is located between the first heat dissipation layer 110 and the heat dissipation ends A1 - A8 . The memory chip 91 includes pins 1-8. The pin 1 of the memory chip 91 is connected to the pin 1 of the interface 81 . The pin 2 of the memory chip 91 is connected to the pin 2 of the interface 81 . The pin 3 of the memory chip 91 is connected to the pin 3 of the interface 81 . The pin 4 of the memory chip 91 is connected to the pin 4 of the interface 81 . The pin 5 of the memory chip 91 is connected to the pin 5 of the interface 81 . The pin 6 of the memory chip 91 is connected to the pin 6 of the interface 81 . The pin 7 of the memory chip 91 is connected to the pin 7 of the interface 81 . The pin 8 of the memory chip 91 is connected to the pin 8 of the interface 81 .

本实施方式中,所述存储芯片91的引脚1还连接于所述存储器200的散热端A1。所述存储芯片91的引脚2还连接于所述存储器200的散热端A2。所述存储芯片91的引脚3还连接于所述存储器200的散热端A3。所述存储芯片91的引脚4还连接于所述存储器200的散热端A4。所述存储芯片91的引脚5还连接于所述存储器200的散热端A5。所述存储芯片91的引脚6还连接于所述存储器200的散热端A6。所述存储芯片91的引脚7还连接于所述存储器200的散热端A7。所述存储芯片91的引脚8还连接于所述存储器200的散热端A8。In this embodiment, the pin 1 of the memory chip 91 is also connected to the heat dissipation terminal A1 of the memory 200 . The pin 2 of the memory chip 91 is also connected to the heat dissipation terminal A2 of the memory 200 . The pin 3 of the memory chip 91 is also connected to the heat dissipation terminal A3 of the memory 200 . The pin 4 of the memory chip 91 is also connected to the heat dissipation terminal A4 of the memory 200 . The pin 5 of the memory chip 91 is also connected to the heat dissipation terminal A5 of the memory 200 . The pin 6 of the memory chip 91 is also connected to the heat dissipation terminal A6 of the memory 200 . The pin 7 of the memory chip 91 is also connected to the heat dissipation terminal A7 of the memory 200 . The pin 8 of the memory chip 91 is also connected to the heat dissipation terminal A8 of the memory 200 .

所述散热端A1-A8均紧贴所述第一隔离槽51设置于所述第一 隔离槽51的第一侧。所述第一散热层110设置于所述第一隔离槽51的第二侧。所述散热端A1-A8到所述第一隔离槽51的距离不大于第一预设距离。本实施方式中,所述第一预设距离为20密尔。The heat dissipation ends A1-A8 are all disposed on the first side of the first isolation slot 51 in close contact with the first isolation slot 51. The first heat dissipation layer 110 is disposed on the second side of the first isolation groove 51 . The distance between the heat dissipation ends A1 - A8 and the first isolation slot 51 is not greater than a first preset distance. In this implementation manner, the first preset distance is 20 miles.

本实施方式中,所述存储芯片91的引脚布线位于所述多层电路板不同信号层。In this embodiment, the pin wiring of the memory chip 91 is located on different signal layers of the multilayer circuit board.

在其他实施方式中,所述存储芯片91的引脚1-8中至少一引脚对应连接于所述散热端A1-A8。In other implementation manners, at least one of the pins 1-8 of the memory chip 91 is correspondingly connected to the heat dissipation terminals A1-A8.

在另一实施方式中,所述存储芯片91的引脚1及引脚2为数据引脚,所述存储芯片91的引脚1对应连接所述散热端A1,所述存储芯片91的引脚2对应连接所述散热端A2。所述存储芯片91的引脚4-8由于热量产生较少而未被连接至散热端。In another embodiment, the pins 1 and 2 of the memory chip 91 are data pins, the pin 1 of the memory chip 91 is correspondingly connected to the heat dissipation terminal A1, and the pins of the memory chip 91 are 2 is correspondingly connected to the heat dissipation terminal A2. The pins 4-8 of the memory chip 91 are not connected to the heat sink due to less heat generation.

本实施方式中,所述存储器200还包括若干存储芯片及若干散热端。所述若干存储芯片的引脚对应连接于所述若干散热端。In this implementation manner, the memory 200 further includes several memory chips and several heat dissipation terminals. Pins of the plurality of memory chips are correspondingly connected to the plurality of cooling terminals.

在其他实施方式中,所述存储器200还包括位于所述多层电路板内层的若干组内层散热端。在内层走线中,每一内层走线均对应连接至所述若干组内层散热端。In other implementation manners, the memory 200 further includes several sets of inner layer heat dissipation terminals located on the inner layer of the multilayer circuit board. In the inner-layer routing, each inner-layer routing is correspondingly connected to the plurality of groups of inner-layer cooling terminals.

通过所述第一散热层110及第二散热层120及所述若干散热孔21,所述电路板100中积累的热量可以迅速排出以降低所述电路板100的温度。类似地,所述存储器200进一步通过所述散热器300加快所述电路板100的热量排出速度,所述散热器300还可以用于所述若干存储芯片71上进行散热。Through the first heat dissipation layer 110 , the second heat dissipation layer 120 and the plurality of heat dissipation holes 21 , the heat accumulated in the circuit board 100 can be quickly discharged to reduce the temperature of the circuit board 100 . Similarly, the memory 200 further accelerates the heat dissipation speed of the circuit board 100 through the heat sink 300 , and the heat sink 300 can also be used to dissipate heat on the plurality of memory chips 71 .

最后应说明的是,以上实施例仅用以说明本实用新型的技术方案而非限制,尽管参照较佳实施例对本实用新型进行了详细说明,本领域的普通技术人员应当理解,可以对本实用新型的技术方案进行修改或等同替换,而不脱离本实用新型技术方案的精神和范围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present utility model without limitation. Although the utility model has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the utility model can be Modifications or equivalent replacements shall be made to the technical solutions without departing from the spirit and scope of the technical solutions of the present utility model.

Claims (10)

1. a circuit board, including parallel relative first surface and second surface, described first surface and second surface pass through Side surface connects, it is characterised in that:
Described circuit board also includes the first heat dissipating layer being located at first surface and is located at the second heat dissipating layer of second surface, described One heat dissipating layer and the second heat dissipating layer include some louvres.
2. circuit board as claimed in claim 1, it is characterised in that: described first surface includes the first radiating area and first yuan of device Part district, described first heat dissipating layer is located at described first radiating area.
3. circuit board as claimed in claim 2, it is characterised in that: it is provided with between described first radiating area and the first components and parts district First isolation channel.
4. circuit board as claimed in claim 1, it is characterised in that: described first heat dissipating layer is Copper Foil, when described circuit board enters During row etching, region Copper Foil residing for described first heat dissipating layer is not etched described first heat dissipating layer of formation.
5. circuit board as claimed in claim 1, it is characterised in that: described some louvres include at least one through hole.
6. a memorizer, including a circuit board and some storage chips, described circuit board includes parallel relative first surface And second surface, described first surface and second surface are connected by side surface, it is characterised in that:
Described circuit board also includes the first heat dissipating layer being located at first surface and is located at the second heat dissipating layer of second surface, described One heat dissipating layer and the second heat dissipating layer include some louvres.
7. memorizer as claimed in claim 6, it is characterised in that: described memorizer includes some radiating ends, described some deposits The pin correspondence of storage chip connects described some radiating ends.
8. memorizer as claimed in claim 6, it is characterised in that: described first surface includes the first isolation channel, described first Heat dissipating layer is arranged at the second side of described first isolation channel, and described some radiating ends are arranged at the first of described first isolation channel Side, described some radiating ends are not more than the first predeterminable range with the distance of described first isolation channel.
9. memorizer as claimed in claim 6, it is characterised in that: described memorizer includes a radiator and an interface, described Interface is positioned at the first end of described memorizer, and described radiator is for being removably socketed on the second end of described memorizer.
10. memorizer as claimed in claim 9, it is characterised in that: described radiator is close to be connected to described some storage cores Sheet, described first heat dissipating layer and described second heat dissipating layer.
CN201620085300.9U 2016-01-28 2016-01-28 Circuit board and memory using the circuit board Active CN205789112U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109768017A (en) * 2019-01-21 2019-05-17 东莞记忆存储科技有限公司 A kind of memory card radiator structure and its processing technology

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109768017A (en) * 2019-01-21 2019-05-17 东莞记忆存储科技有限公司 A kind of memory card radiator structure and its processing technology
CN109768017B (en) * 2019-01-21 2020-04-21 东莞记忆存储科技有限公司 Memory card heat dissipation structure and processing method thereof

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