Utility model content
Main purpose of the present utility model is to provide a kind of micro-signal accurate measurement circuit, it is intended to solves existing signal and surveys
Amount circuit cannot accurately measure the problem of small-signal.
For achieving the above object, the utility model provides a kind of micro-signal accurate measurement circuit, including the first biological biography
Sensor, the second biology sensor, the 3rd biology sensor, the 4th biology sensor, the first difference amplifier, the second differential amplification
Device, the 3rd difference amplifier, ADC amplification chips and single-chip microcomputer, the ADC amplification chips include amplifying circuit chip and
Adc circuit chip, wherein:
The first input end of first difference amplifier is connected to the first biology sensor, and the of the first difference amplifier
Two inputs are connected to the second biology sensor;
The first input end of second difference amplifier is connected to the 3rd biology sensor, and the of the second difference amplifier
Two inputs are connected to the 4th biology sensor;
The output end of first difference amplifier is connected to the first input end of the 3rd difference amplifier, and the second difference is put
The output end of big device is connected to the second input of the 3rd difference amplifier;
The output end of the 3rd difference amplifier is connected to the input of the amplifying circuit chip, the amplifying circuit
The output end of chip is connected to the input of adc circuit chip, and the output end of the adc circuit chip is connected to the monolithic
Machine.
Preferably, first difference amplifier includes two first resistors, two second resistances and first crystals three
Pole pipe.
Preferably, one of first resistor of first difference amplifier is connected serially to the first of first crystal triode
Input, the other in which first resistor of first difference amplifier is connected serially to the second input of first crystal triode
End, one end of one of second resistance of first difference amplifier is connected to the first input end of first crystal triode
And the other end of the second resistance is connected to the output end of first crystal triode, first difference amplifier it is wherein another
The other end of the second input and the second resistance that one end of individual second resistance is connected to first crystal triode is connected to and connects
Ground wire.
Preferably, second difference amplifier includes two first resistors, two second resistances and first crystals three
Pole pipe.
Preferably, one of first resistor of second difference amplifier is connected serially to the first of first crystal triode
Input, the other in which first resistor of second difference amplifier is connected serially to the second input of first crystal triode
End, one end of one of second resistance of second difference amplifier is connected to the first input end of first crystal triode
And the other end of the second resistance is connected to the output end of first crystal triode, second difference amplifier it is wherein another
The other end of the second input and the second resistance that one end of individual second resistance is connected to first crystal triode is connected to and connects
Ground wire.
Preferably, the 3rd difference amplifier includes two 3rd resistors, two the 4th resistance and the second crystal three
Pole pipe.
Preferably, one of 3rd resistor of the 3rd difference amplifier is connected serially to the first of the second transistor
Input, the other in which 3rd resistor of the 3rd difference amplifier is connected serially to the second input of the second transistor
End, one end of one of them the 4th resistance of the 3rd difference amplifier is connected to the first input end of the second transistor
And the 4th the other end of resistance be connected to the output end of the second transistor, the 3rd difference amplifier it is wherein another
The other end of the second input and the 4th resistance that one end of individual 4th resistance is connected to the second transistor is connected to and connects
Ground wire.
Preferably, first biology sensor is produced for sensing first wave length Infrared irradiation on target detection object
The first raw micro-signal, the second biology sensor is used to sense what second wave length Infrared irradiation was produced on target detection object
Second micro-signal, the 3rd biology sensor is used for the 3rd IR wavelengths of sensing and is radiated at the 3rd produced on target detection object
Micro-signal, the 4th biology sensor is used for the 4th IR wavelengths of sensing and is radiated at the 4th wechat produced on target detection object
Number.
Compared to prior art, micro-signal accurate measurement circuit described in the utility model adopts above-mentioned technical proposal, obtains
Following technique effect:By obtaining the faint feature electric signal in four roads and carrying out calculus of differences by multiple differential amplifier
And carry out high magnification numbe amplify obtain measure characteristic signal such that it is able to accurately measure faint feature electric signal.
Specific embodiment
Further to illustrate that the utility model is to reach technological means and effect that above-mentioned purpose is taken, below in conjunction with
Accompanying drawing and preferred embodiment, are described in detail to specific embodiment of the present utility model, structure, feature and its effect.Should
Work as understanding, specific embodiment described herein only to explain the utility model, is not used to limit the utility model.
As shown in figure 1, the circuit structure that Fig. 1 is the utility model micro-signal accurate measurement circuit preferred embodiment is illustrated
Figure.In the present embodiment, the micro-signal accurate measurement circuit 1 include the first biology sensor 2, the second biology sensor 3, the
Three biology sensors 4, the 4th biology sensor 5, the first difference amplifier 11, the second difference amplifier 12, the 3rd differential amplification
Device 13, ADC (digital-to-analogue conversion) amplification chip 14 and single-chip microcomputer 15.The first input end of the first difference amplifier 11 is connected to
One biology sensor 2, the second input of the first difference amplifier 11 is connected to the second biology sensor 3, the second differential amplification
The first input end of device 12 is connected to the 3rd biology sensor 4, and the second input of the second difference amplifier 12 is connected to the 4th
Biology sensor 5.The output end of the first difference amplifier 11 is connected to the first input end of the 3rd difference amplifier 13, and second is poor
The output end of point amplifier 12 is connected to the second input of the 3rd difference amplifier 13, the output end of the 3rd difference amplifier 13
The input of the AD amplification chips 14 is connected to, the output end of ADC amplification chips 14 is connected to single-chip microcomputer 15.
First biology sensor 2 is used for from the micro-signal of target detection object acquisition first, and the second biology sensor 3 is used
In from the micro-signal of target detection object acquisition second, the 3rd biology sensor 4 is used for from the wechat of target detection object acquisition the 3rd
Number, the 4th biology sensor 5 is used for from the micro-signal of target detection object acquisition the 4th.In the present embodiment, by using respectively
The Infrared irradiation of four kinds of different wave lengths on target detection object, therefore, the first micro-signal is that the first biology sensor 2 is sensed
To the feature electric signal that first wave length Infrared irradiation is produced on target detection object, the second micro-signal is the second bio-sensing
Device 3 senses the feature electric signal that second wave length Infrared irradiation is produced on target detection object, and the 3rd micro-signal is the 3rd
Biology sensor 4 senses the 3rd IR wavelengths and is radiated at the feature electric signal produced on target detection object, the 4th wechat
Number it is that the 4th biology sensor 5 senses the 4th IR wavelengths and is radiated at the feature electric signal produced on target detection object.
Four kinds of micro-signals on Infrared irradiation to target detection object that the present embodiment passes through four kinds of different wave lengths of acquisition, and to four kinds
Micro-signal carries out multi-level differential computing and the measurement characteristic signal of target detection object is measured by amplifying.For example, it is desired to survey
During amount human blood glucose concentration, respectively using the Infrared irradiation of four kinds of different wave lengths to blood sugar for human body measuring point (target detection
Position), you can four kinds of faint blood sugar concentration electric signals are obtained respectively by four biology sensors, then by the micro-signal
Accurate measurement circuit 1 carries out multi-level differential computing and amplification is obtained human blood glucose concentration signal, and exports to single-chip microcomputer 5
The follow-up blood sugar concentration analysis of row.
In the present embodiment, the first difference amplifier 11 and the second difference amplifier 12 include two first resistors R1,
Two second resistances R2 and a first crystal triode Q1.One of first resistor R1 string of the first difference amplifier 11
The first input end of first crystal triode Q1 is coupled to, other in which first resistor R1 of the first difference amplifier 11 is connected serially to
Second input of first crystal triode Q1;One end of one of second resistance R2 of the first difference amplifier 11 is connected to
The first input end of the first crystal triode Q1 and other end of second resistance R2 is connected to the defeated of first crystal triode Q1
Go out end, one end of other in which second resistance R2 of the first difference amplifier 11 is connected to the second of first crystal triode Q1
The other end of input and second resistance R2 is connected to ground wire.One of first resistor R1 of the second difference amplifier 12
It is connected serially to the first input end of first crystal triode Q1, the other in which first resistor R1 series connection of the second difference amplifier 12
To second input of first crystal triode Q1;One end connection of one of second resistance R2 of the second difference amplifier 12
The other end of first input end and second resistance R2 to first crystal triode Q1 is connected to first crystal triode Q1's
Output end, one end of other in which second resistance R2 of the second difference amplifier 12 is connected to the of first crystal triode Q1
The other end of two inputs and second resistance R2 is connected to ground wire.
First difference transport and placing device 11 is used to obtain the first micro-signal and from the second biology sensor from the first biology sensor 2
3 obtain the second micro-signal, and the multiplication factor that the first micro-signal and the second micro-signal are passed through into the first difference transport and placing device 11
Carry out calculus of differences and amplification obtains the first differential signal.Second difference amplifier 12 is used for from the 3rd biology sensor 4
Obtain the 3rd micro-signal and obtain the 4th micro-signal from the 4th biology sensor 5, and by the 3rd micro-signal and the 4th micro-signal
Calculus of differences is carried out by the multiplication factor of second difference amplifier 12 and amplification obtains the second differential signal.First difference is put
The multiplication factor of big device 11 is equal to the ratio of the resistance value of second resistance R2 in the first difference amplifier 11 and first resistor R1,
The multiplication factor of the second difference amplifier 12 is equal with the multiplication factor of the first difference amplifier 11.
In the present embodiment, the temperature coefficient K1 of the first difference amplifier 11 is electric by second in the first difference amplifier 11
The temperature coefficient of resistance R2 and first resistor R1 determines.It is appreciated that the temperature coefficient of some resistance is referred to when temperature changes
The relative changing value of the resistance value of resistance when becoming 1 DEG C, unit is ppm/ DEG C.For example, the temperature coefficient of first resistor R1 is represented
For QCR1=Δ R1/R1 Δ T, the temperature coefficient of second resistance R2 is expressed as QCR2=Δ R2/R2 Δ T, wherein, QCR1 is
The temperature coefficient of first resistor R1, QCR2 is the temperature coefficient of second resistance R2, and Δ T is temperature change value, and Δ R1 is referred in temperature
The increased resistance value of lower first resistor R1 of degree change, Δ R2 refers to the increased resistance value of second resistance R2 under temperature change ,/generation
Table division arithmetic, represents multiplying.In practical application, temperature coefficient generally adopts average temperature coefficient, and has subzero temperature
Degree coefficient, positive temperature coefficient and the critical-temperature coefficient that resistance only can undergo mutation under a certain specified temp.Described first is poor
The temperature coefficient K1 for dividing amplifier 11 is equal to the temperature coefficient QCR2 of the second resistance R2 and temperature coefficient QCR1 of first resistor R1
Ratio, i.e.,:K1=QCR2/QCR1.The temperature of the temperature coefficient of second difference amplifier 12 and the first difference amplifier 11
Degree coefficient is equal.
In the present embodiment, the 3rd difference amplifier 13 includes two 3rd resistors R3, two the 4th resistance R4 and
Individual second transistor Q2.One of 3rd resistor R3 of the 3rd difference amplifier 13 is connected serially to the second transistor Q2
First input end, other in which 3rd resistor R3 is connected serially to second input of the second transistor Q2;3rd difference
One end of one of them the 4th resistance R4 of amplifier 13 is connected to the first input end and the other end of the second transistor Q2
The output end of the second transistor Q2 is connected to, one end of the resistance R4 of other in which the 4th is connected to the second transistor
Second input of the Q2 and other end is connected to ground wire.
3rd difference amplifier 13 is used to put the first differential signal and the second differential signal by the 3rd difference
The multiplication factor of big device 13 carries out calculus of differences and amplification obtains measuring characteristic signal.In the present embodiment, the 3rd difference
The multiplication factor of amplifier 13 is equal to the ratio of the resistance value of the 4th resistance R4 in the 3rd difference amplifier 13 and 3rd resistor R3
Value.The temperature coefficient K2 of the 3rd difference amplifier 13 is by the 4th resistance R4 and 3rd resistor in the 3rd difference amplifier 13
The temperature coefficient of R3 determines.For example, the temperature coefficient of 3rd resistor R3 is expressed as QCR3=Δ R3/R3 Δ T, the 4th resistance R4
Temperature coefficient be expressed as QCR4=Δ R4/R4 Δ T, wherein, QCR3 for 3rd resistor R3 temperature coefficient, QCR4 be the 4th
The temperature coefficient of resistance R4, Δ T is temperature change value, and Δ R3 refers to the increased resistance value of 3rd resistor R3 under temperature change,
Δ R4 refers to the increased resistance value of the 4th resistance R4 under temperature change ,/division arithmetic is represented, represent multiplying.It is described
The temperature coefficient K2 of the 3rd difference amplifier 13 is equal to the temperature coefficient QCR4 of the 4th resistance R4 and the temperature system of 3rd resistor R3
The ratio of number QCR3, i.e.,:K2=QCR4/QCR3.
In the present embodiment, the ADC amplification chips 14 include but not limited to, and amplifying circuit chip 141 and ADC are electric
Road chip 142.The input of the amplifying circuit chip 141 is connected to the output end of the 3rd difference amplifier 13, the amplification
The output end of circuit chip 141 is connected to the input of adc circuit chip 142, and the output end of the adc circuit chip 142 connects
It is connected to the single-chip microcomputer 15.The amplifying circuit chip 141 is used to for the measurement characteristic signal to pass through the amplifying circuit chip
141 multiplication factor carries out exporting after signal amplification to adc circuit chip 142, after the adc circuit chip 142 is used to amplify
Measurement characteristic signal carry out digital-to-analogue conversion and export to single-chip microcomputer 15, to carry out follow-up signal measurement analysis.
In the present embodiment, the amplifying circuit chip 141 is amplifying circuit of the prior art composition, and the ADC is electric
Road chip 142 is D/A converting circuit composition of the prior art.It will be appreciated by persons skilled in the art that the amplification
The multiplication factor of circuit chip 141 is the intrinsic particular value of the amplifying circuit chip 141, i.e. the amplifying circuit chip 141 is intrinsic
Amplification attribute, but operationally can by the amplifying circuit chip 141 temperature coefficient K3 produce temperature drift be affected.Institute
The temperature coefficient K3 for stating amplifying circuit chip 141 is the intrinsic temperature characterisitic of the amplifying circuit chip 141, and it reflects the amplification electricity
Road chip 141 causes the order of severity that the occurrence temperature of amplifying circuit chip 141 is drifted about in the case of temperature change.It is described
Amplifying circuit chip 141 produces signal interference as temperature change can produce temperature drift phenomenon to measuring characteristic signal,
So as to cause measurement characteristic signal to be submerged among interference signal, therefore cannot accurately measure measurement characteristic signal.
In the present embodiment, by first resistor R1 and second resistance that determine the first difference amplifier 11 and in the second difference amplifier 12
The temperature coefficient of R2, and by 3rd resistor R3 in the 3rd difference amplifier 13 of determination and the temperature system of the 4th resistance R4
Number so that the product of the temperature coefficient K1 of the first difference amplifier 11 and the temperature coefficient K2 of the 3rd difference amplifier 13 with it is described
The temperature coefficient K3 of amplifying circuit chip 141 is equal in magnitude and symbol is conversely, hence in so that the first difference amplifier 11 and the 3rd
The temperature drift that the impact that the temperature drift that difference amplifier 13 is produced is disturbed signal is produced with amplifying circuit chip 141 is to letter
Number interference impact cancel out each other such that it is able to eliminate small-signal high magnification numbe amplifying circuit carry out signal amplify when run into
Temperature drift produce signal interference, improve measurement small-signal accuracy.
Preferred embodiment of the present utility model is these are only, the scope of the claims of the present utility model is not thereby limited, it is every
The equivalent structure made using the utility model specification and accompanying drawing content or equivalent function are converted, or are directly or indirectly used in
Other related technical fields, are included in the same manner in scope of patent protection of the present utility model.