CN206259319U - Base plate processing system - Google Patents
Base plate processing system Download PDFInfo
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- CN206259319U CN206259319U CN201621292696.0U CN201621292696U CN206259319U CN 206259319 U CN206259319 U CN 206259319U CN 201621292696 U CN201621292696 U CN 201621292696U CN 206259319 U CN206259319 U CN 206259319U
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- fluid
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- 238000012545 processing Methods 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 203
- 239000012530 fluid Substances 0.000 claims abstract description 91
- 238000000227 grinding Methods 0.000 claims abstract description 81
- 238000012546 transfer Methods 0.000 claims abstract description 76
- 238000002347 injection Methods 0.000 claims description 31
- 239000007924 injection Substances 0.000 claims description 31
- 239000000126 substance Substances 0.000 claims description 15
- 239000007921 spray Substances 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 11
- 238000003701 mechanical milling Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 19
- 238000009736 wetting Methods 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 description 62
- 238000011068 loading method Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 238000010276 construction Methods 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229960004424 carbon dioxide Drugs 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 230000000306 recurrent effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67715—Changing the direction of the conveying path
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The utility model is related to a kind of base plate processing system, and it includes：Grind section, it carries out cmp (CMP) technique to substrate；Carrier head, the substrate that it will complete grinding technics is transferred along transfer path set in advance to the unloading area for being arranged at grind section；Wet processed portion, it is arranged at grind section along transfer path, and complete grinding technics substrate along transfer path continuously transfer during by processing substrate be wet type (wetting) state, available effect is accordingly, the wet type state of the substrate of completion grinding technics is stably kept, the usage amount of the fluid for substrate to be remained wet type state is reduced.
Description
Technical field
The utility model is related to a kind of base plate processing system, relates more particularly to a kind of base plate processing system, the base
Plate processing system stably keeps completing wet type (wetting) state of the substrate after grinding technics, and can reduce for making
Obtain the usage amount that substrate remains the fluid of wet type state.
Background technology
Semiconductor element is fabricated by by fine circuit line highly dense, therefore, wafer surface must be carried out accordingly
Precise finiss.For the grinding more become more meticulous to wafer, mechanical lapping and the parallel chemical machine of chemical grinding are carried out
Tool grinding technics (CMP).
Cmp (CMP) technique be it is a kind of in order to realize global planarization with by the contact for forming circuit
(contact)/wiring UF membrane and highly integrated element and improvement of wafer surface roughness for producing etc. and to crystalline substance
The surface of unit carries out the technique of fine gtinding processing, and the global planarization is to remove in semiconductor element manufacturing process repeatedly
Sheltered the wafer surface that is generated while (masking), etching (etching) and Wiring technique etc. it is concavo-convex caused by
Unit (cell) region and the interregional difference in height of peripheral circuits.
The CMP is completed by following form, in the state of technical face and the grinding pad of wafer are facing, to institute
Wafer pressurization is stated, while chemical grinding and the mechanical lapping of technical face are carried out, and the scavenger by being carried out in following form
Skill：The wafer loaded body head for completing grinding technics is grasped, so as to be cleaned to the foreign matter for being attached to technical face.
In other words, as shown in figure 1, normally, the chemical mechanical milling tech of wafer is completed by following form, if
Wafer is supplied in chemical machinery polishing system X1 by loading unit 20, then by wafer W be close to carrier head S (S1, S2, S1',
S2' in the state of), along regulation path P o carry out transfer 66-68 while, multiple grinding flat plate P1, P2, P1',
Chemical mechanical milling tech is carried out on P2'.The wafer W that chemical mechanical milling tech will be carried out is transferred to unloading by carrier head S
The rack 10 of unit, and the cleaning unit X2 for carrying out ensuing cleaning is transferred to, so as to carry out cleaning in multiple
The technique that 70 pairs of foreign matters for being attached to wafer W of module (module) are cleaned.
As described above, completing the wafer W of grinding in each grinding flat plate P1, P2, P1', P2' by along transfer path
The carrier head S of Po movements after being unloaded to the rack 10 of unloading unit, is transferred, and cleaned to cleaning module 70.
In addition, have a problem in that, if what the wafer W for completing grinding was transferred along transfer path P o to unloading unit
Drying is obtained in way, then on the surface of wafer W watermark or the installing component of substrate can be produced to sustain damage, thus, complete grinding
The ways transferred along transfer path P o of wafer W in, wafer W need to keep the state soaked.
Therefore, proposing following scheme in existing technology：Unloading unit is transferred in the wafer W for completing grinding
Fluid (DIW) injection apparatus or wet type bath dress of the wet type state (state soaked) for keeping substrate are installed on transfer path
Put (wetting bath), before the wafer W of completion grinding is transferred to unloading unit, can be soaked by fluid in position set in advance
It is wet.
But, in the prior art, the wafer W of grinding is completed to soak, in other words, in order to keep wet type state,
So that the movement of carrier head stops temporarily, the increased problem of process time of wafer W is thus had, therefore has expense rising,
The low problem of yield.
Thus, carry out stably keeping the wet type state of the wafer for completing grinding and being carried for the expense of saving recently
Each kind of research in high yield, but still suffer from deficiency, it is therefore desirable to the exploitation to this.
Utility model content
The purpose of this utility model is, there is provided a kind of base plate processing system, and it can stably keep the base for completing to grind
The wet type state of plate, can prevent the damage of the installing component because of the generation and substrate of watermark that drying causes.
Especially, the purpose of this utility model is not stop the transfer of substrate, can stably keep the wet shape of substrate
State, prevents the damage of the installing component because of the generation and substrate of watermark that drying causes.
Additionally, the purpose of this utility model is, the usage amount of the fluid of wet type state for keeping substrate is reduced, can
Prevent because of the error unintentionally that fluid causes.
Additionally, the purpose of this utility model is, expense can be saved, and improve yield.
Additionally, the purpose of this utility model is, before the substrate of completion grinding is transferred to cleaning part, substrate is will be present in
Foreign matter once remove such that it is able to improve cleaning efficiency.
Additionally, the purpose of this utility model is, the foreign matter that will remain in carrier head is minimized.
According to the preferred embodiment of the present utility model for reaching above-mentioned the purpose of this utility model, processing substrate system
System includes：Grind section, it carries out cmp (CMP) technique to substrate；Carrier head, it will complete the substrate of grinding technics
Along transfer path set in advance, the unloading area for being arranged at grind section is moved to；Wet processed portion, it is along transfer path
Be arranged at grind section, complete grinding technics substrate continuously transferred along transfer path during by processing substrate be wet type shape
State.
It is intended that when the substrate for completing cmp is transferred to unloading area, stably keeping substrate
Wet type state, prevents because of the generation of the watermark that drying substrates cause accordingly, and prevents the damage of substrate installation portion part.
Especially, the available favourable effect of the utility model is to complete the substrate of grinding technics along transfer road
Footpath continuously by transfer during, wet processed is carried out to substrate, in other words, do not interrupting the movement (transfer of substrate) of carrier head
In the state of wet processed is continuously carried out to substrate, process efficiency is not reduced accordingly, in the way that substrate is transferred, stably
Keep the wet type state of substrate.
Additionally, available favourable effect is, the position of the carrier head to being moved along transfer path perceives,
Wet processed only is carried out to substrate on the position that the carrier head is perceived, accordingly, the usage amount of fluid is minimized
Meanwhile, stably keep the wet type state of substrate.
In other words, following effect is can obtain, on the transfer path that the substrate for completing grinding is transferred to unloading unit, even
Continuous injection is used to soak the fluid of substrate, accordingly, the wet type state of substrate can be kept in the state of carrier head is not stopped, but
It is in the case of the mode, independently, to continue on integrally transfer path interval with the presence or absence of the substrate for completing grinding
, thus there is unnecessarily increasing the usage amount of fluid, and the fluid for spraying without purpose peripheral device in injection fluid
Disperse, thus there is a problem of so that various errors are produced.But, in the utility model, the position spray for only existing in substrate
Jet body, accordingly, reduces the usage amount of fluid, stably keeps the wet type state of substrate.
Specifically, wet processed portion includes：Multiple wet processing units, it is matched somebody with somebody along transfer path in the form of separating
Put, it is wet type state that substrate is independently processed from；Sense part, it feels to the carrier head position moved along transfer path
Know.In multiple wet processing units, only carrier head be perceived at least any one by processing substrate be wet type state,
The effect for minimizing the usage amount of fluid can be obtained accordingly.
Wet processed portion includes：Rear wet processed portion, its configuration is ground in the rear end of the first abrasive areas and second
Grind the rear end in region；Center wet processed portion, configures between the first abrasive areas and the second abrasive areas.First grinding
The substrate being ground in region or the second abrasive areas, is passing sequentially through the phase in rear wet processed Bu Yu centers wet processed portion
Between, wet type state is continuously processed as, the advantageous effects of the wet type state for more stably keeping substrate are can obtain accordingly.
Also, wet processed portion includes wet type bath apparatus, carrier head is contained in the wet type bath dress in movably form
Put, wet processing unit is included in inside wet type bath apparatus the fluid injection portion that fluid is sprayed to substrate.
Fluid injection portion is formed as to be sprayed to substrate various construction of fluid.For example, can as fluid injection portion
Use common nozzle.Differently, other different jet tools can be used to replace nozzle, the utility model not to be filled by injection
The limitation or restriction of the species put.
Preferably, plane perpendicular from fluid injection portion to substrate spray fluid, available effect is accordingly, protect
Hold the wet type state of substrate, meanwhile, complete grinding substrate to cleaning part by transfer before, the impact caused using fluid
(vertical direction toward impact power) is present in the foreign matter of substrate once to remove.Now, fluid injection portion is configured to spray liquid fluid (example
Such as, pure water) and steam at least any one.
Also, there is a side ejection section the inside of wet type bath apparatus is settable, the side ejection section is towards carrier head
Spray fluid in side.Side ejection section sprays fluid (fluid liquid or steam) to the side of carrier head, and can remove presence
It is in the foreign matter of carrier head side therefore available advantageous effect reside in that, by because may remain in the foreign matter of carrier head and in base
The situation for being contaminated or damaging before plate grinding is minimized.
Preferably, wet type bath apparatus are formed as the height with covering carrier head side, and ejection section configuration in side is being less than
The position of wet type bath apparatus upper end.As described above, configuring side ejection section in the upper end position less than wet type bath apparatus, accordingly may be used
It is obtaining advantageous effect reside in that, situation that the fluid sprayed from side ejection section is dispersed to outside is minimized.
Sense part includes multiple detecting sensors, and the multiple detecting sensor is neighbouring with multiple wet processing units respectively
Ground configuration, and carrier head is perceived.Carried out come the movement to carrier head using the multiple detecting sensors for constituting sense part
Perceive, such that it is able to learn the position that is presently in of carrier head on transfer path.For example, perceptually sensor, can be used
Optical sensor.
According to another field of the present utility model, substrate board treatment can be operated as follows：Grinding step
Suddenly, chemical mechanical milling tech (CMP) is carried out to substrate using grind section；Transfer step：Grinding work will be completed using carrier head
The substrate of skill is transferred along the unloading area that transfer road set in advance is radially disposed at grind section；Wet processed step, complete
Into grinding technics substrate along transfer path constantly transfer during, by processing substrate be wet type (wetting) state.
As described above, during the substrate for completing grinding technics is continuously transferred along transfer path, wet type is carried out to substrate
Treatment, in other words, is continuously carried out at wet type in the state of the movement (transfer of substrate) for not interrupting carrier head to substrate
Reason, it is available accordingly advantageous effect reside in that, do not reduce process efficiency, in the way that substrate is transferred, stably keep substrate
Wet type state.
Especially, the position of the carrier head in wet processed step to being moved along transfer path perceives, and only
The carrier head be perceived position on wet processed is carried out to substrate, it is available accordingly advantageous effect reside in that, by fluid
Usage amount minimize while, stably keep substrate wet type state.
Specifically, by processing substrate it is wet type state using wet processed portion, and many in wet processed step
In individual wet processing unit, only carrier head be perceived at least any one by processing substrate be wet type state, multiple it is wet
In formula processing unit, carrier head it is perceived at least interrupt wet processed in another, the wet processed portion includes many
Individual wet processing unit and sense part, the multiple wet processing unit are simultaneously independent with the configuration of separatedly form along transfer path
Processing substrate is wet type state by ground, and the position of carrier head of the sense part to being moved along transfer path perceives.
Wet type can be carried out to substrate according to required condition and design pattern in several ways in wet processed step
Treatment.For example, in wet processed step, to substrate injection fluid so as to carry out wet processed to substrate.Also, as wet
The fluid used in formula process step, can be used in fluid liquid (for example, pure water) and steam at least any one.
Also, including by fluid injection in along transfer path move carrier head side side injecting step, accordingly
Available favourable effect is that will be contaminated or damaged before substrate grinding because that may remain in the foreign matter of carrier head
Situation minimize.
Used as reference, in the utility model, the surface that " the wet type state " of so-called substrate is defined as substrate is moist, and
It is moist wet state.
Also, in the utility model, " wet processed " of substrate means that the surface of substrate is moist and remains humidity
Wet state technique.
As described above, according to the utility model, can stably keep the wet type state of the substrate of completion grinding, prevent because dry
The watermark of dry generation and the damage of the installing component of substrate.
Particularly, the utility model, during the substrate for completing grinding technics is continuously transferred along transfer path, to substrate
Wet processed is carried out, in other words, substrate is continuously entered in the state of the movement (transfer of substrate) for not interrupting carrier head
Row wet processed, available favourable effect is not reduce process efficiency accordingly, in the way of base plate transfer, stably
Keep the wet type state of substrate.
Especially, according to the utility model, the position of the carrier head to being moved along transfer path perceives, only described
Carrier head carries out wet processed on perceived position to substrate, and available favourable effect is accordingly, by making for fluid
Minimized, stably keeps the wet type state of substrate.
In other words, following advantageous effects are can obtain, in the transfer path that the substrate for completing grinding is transferred to unloading unit
On, the fluid for soaking substrate is continuously sprayed, the wet type of substrate can be kept in the state of carrier head is not stopped accordingly
State, but in the case of the mode, with the presence or absence of the substrate for completing grinding, independently, integrally transferring, path is interval
Fluid is constantly sprayed in all parts, thus there is a problem of unnecessarily increasing the usage amount of fluid, and the fluid for spraying
Inadvertently dispersed to peripheral device, thus there is a problem of so that various errors are produced.But, be can obtain in the utility model
Favourable effect be, only substrate exist a position spray fluid, accordingly reduce fluid usage amount, stably keep base
The wet type state of plate.
Also, according to the utility model, using wet processed portion come before being transferred to cleaning part in the substrate for completing grinding
Keep substrate wet type state, meanwhile, the foreign matter that will be present in substrate is once removed, thus it is available advantageous effect reside in that,
Improve cleaning efficiency.
Also, following advantageous effects can obtain according to the utility model, the fraction defective of substrate can be minimized, improve work
Skill efficiency and yield.
Brief description of the drawings
Fig. 1 is the figure of the composition for showing existing chemical-mechanical grinding device,
Fig. 2 is to show the figure according to base plate processing system of the present utility model,
Fig. 3 is the figure in the wet processed portion for explanatory diagram 2,
Fig. 4 to Fig. 6 be the wet processed portion for explanatory diagram 2 construction and operation structure figure,
Fig. 7 to Figure 10 is the figure for illustrating the wet processing operation of the substrate in the wet processed portion according to Fig. 2,
Figure 11 is the block diagram for illustrating the operating method according to substrate board treatment of the present utility model.
Specific embodiment
Hereinafter, preferred embodiment of the present utility model is described in detail referring to the drawings, but the utility model is not
It is limited by example or limits.Used as reference, identical label substantially refers to identical key element in the utility model, and
Under the rule, described content in other accompanying drawings can be quoted to illustrate, and can omit self-evident for practitioner
Interior perhaps recurrent content.
Fig. 2 is to show the figure according to base plate processing system of the present utility model, and Fig. 3 is the wet processed for explanatory diagram 2
The figure in portion, Fig. 4 to Fig. 6 is the construction in the wet processed portion for explanatory diagram 2 and the figure of operation structure.Additionally, Fig. 7 to Figure 10 is
Figure for illustrating the wet processing operation of the substrate in the wet processed portion according to Fig. 2.
Reference picture 2, includes according to base plate processing system of the present utility model 1：Grind section, it carries out chemical machinery to substrate
Grinding (CMP) technique；Carrier head, the substrate for completing grinding technics is radially disposed at grinding by it along transfer road set in advance
The unloading area transfer in portion；Wet processed portion, it is arranged at grind section along transfer path, completes the substrate edge of grinding technics
Transfer path continuously transfer during by processing substrate be wet type state.
Grind section 100 is formed as carrying out the various structures of chemical mechanical milling tech, and the utility model is not
Limited or restriction by the structure and layout (layout) of grind section 100.
Multiple grinding flat plates 110 can be formed with grind section 100, and can be adhered to above each grinding flat plate 110
There is grinding pad.The substrate 10 of loading unit is supplied in be close to the carrier head 120 moved along path set in advance
State be contacted with above grinding pad in the form of rotating, thus can carry out chemical mechanical milling tech, the loading unit
It is formed on the region of grind section 100, lapping liquid is supplied in grinding pad.
Carrier head 120 is configured to be moved along the circulating path for having set on the region of grind section 100, is supplied in and adds
The substrate 10 (being hereinafter referred to as supplied in the substrate of substrate loading position) of carrier unit is passed through with being close to the state of carrier head 120
Carrier head 120 is transferred.Following composition illustrated below：Carrier head 120 begins to pass through grinding flat plate 110 from loading unit
And the circulating path along substantially quadrangle form is moved.
For example, grind section 100 includes：First abrasive areas 101, it is configured with multiple first grinding flat plates 110；Second grinds
Mill region 102, it is facing with the first abrasive areas, and is configured with multiple second grinding flat plates 110 ', is loaded into loading area
The substrate 10 of P2 is transferred after the first abrasive areas 101 or the second abrasive areas 102 are ground by carrier head 120, and
It is unloaded at unloading area P1.
To Fig. 6, wet processed portion 130 is arranged at grind section 100 to reference picture 3 along transfer path set in advance, complete
Into grinding technics substrate 10 along transfer path continuously transfer during, substrate 10 is processed as wet type (wetting) state.
Here, the wet type state of so-called substrate 10 refers to, the surface of substrate 10 is moist but the wet state of humidity,
The wet processed of so-called substrate 10 refers to so that the surface of substrate 10 keeps moist wet state rather than dry state
Technique.
Wet processed portion 130 complete grinding technics substrate 10 along transfer path continuously transfer during, by substrate
Wet type state is processed as, in other words, in the state of the movement (transfer of substrate 10) of carrier head 120 is not disrupted, to base
Plate 10 continuously carries out wet processed, it is available accordingly advantageous effect reside in that, do not reduce process efficiency, and moved in substrate 10
The wet type state of substrate 10 is stably kept in sending on the way.
For example, the composition in wet processed portion 130 includes：Multiple wet processing units 140, it is along transfer path separating
Form configuration, and substrate 10 is independently processed as wet type state；Sense part 150, it is to the load along the movement of transfer path
The position of body first 120 is perceived.In multiple wet processing units 140, only carrier head 120 be perceived it is at least any one
It is individual that substrate 10 is processed as wet type state.
Here, so-called at least any one general being only perceived in carrier head 120 in multiple wet processing units 140
Substrate 10 is processed as wet type state and refers to only in the wet processing unit 140 that carrier head 120 is perceived, at substrate 10
It is wet type state to manage, and wet processed is interrupted in carrier head 120 not perceived remaining other wet processing units 140.
Specifically, wet processed portion 130 includes：Rear wet processed portion 130, its configuration is in the first abrasive areas 101
The rear end of rear end and the second abrasive areas 102；Center wet processed portion 130, its configuration is in the first abrasive areas 101
And second between abrasive areas 102.In the substrate 10 that the first abrasive areas 101 or the second abrasive areas 102 are ground, according to
It is secondary by during rear wet processed Bu130Yu centers wet processed portion 130, being continuously processed as wet type state.
More specifically, wet processed portion 130 (rear wet processed Bu Ji centers wet processed portion) includes that wet type bathes dress
136 are put, carrier head 120 is contained in the wet type bath apparatus 136 in moveable form, wet processing unit 140 includes fluid
Ejection section 142, the fluid injection portion 142 is inside wet type bath apparatus 136 to the water spray fluid of substrate 10.
Wet type bath apparatus 136 are formed as having the form corresponding with the transfer path of substrate set in advance 10, ensure
While carrier head 120 is moved, do not dispersed to outside and can be to be aggregated from the fluid of the injection of fluid injection portion 142.For example,
Opening portion can be formed on the top of wet type bath apparatus 136, carrier head 120 can be by the opening portion of wet type bath apparatus 136, to enter
The state of the inside of wet type bath apparatus 136 moves along path and moves.
Fluid injection portion 142 is formed as the various construction to the sprayable fluid of substrate 10.For example, as fluid injection
Portion 142 can be used common nozzle.Differently, other different injection apparatus can be used to replace nozzle, the utility model is not
Limited or restriction by the species of injection apparatus.
Preferably, fluid sprays to the plane perpendicular of substrate 10 in fluid injection portion 142, and available effect is accordingly,
The wet type state of substrate 10 is kept, meanwhile, before the substrate 10 for completing grinding is transplanted on cleaning part, by hitting that fluid causes
Hit power (vertical direction toward impact power) and once remove the foreign matter for being present in substrate 10.According to different situations, fluid injection portion can also be to
Substrate bottom surface obliquely sprays fluid.
Meanwhile, fluid injection portion 142 be configured to injection fluid liquid (for example, pure water) and steam at least any one.
According to different situations, it is also possible to sprayed with the state that fluid liquid or steam and gaseous fluid or dry-ice particle etc. mix.
Also, the side ejection section that fluid is sprayed in the side of oriented carrier head 120 can be set in the inside of wet type bath apparatus 136
144。
Side ejection section 144 sprays fluid (fluid liquid or steam) to the side of carrier head 120 such that it is able to which removing is deposited
It is the foreign matter of the side of carrier head 120.As described above, the carrier head 120 that the substrate 10 to completing grinding technics is transferred can
With by side ejection section 144 by pre-wash, it can thus be concluded that arrive advantageous effect reside in that, will be because carrier head may be remained in
120 foreign matter and substrate 10 grinding before be contaminated or damage situation minimize.
Preferably, wet type bath apparatus 136 are formed as the height with covering carrier head 120 side, and side ejection section 144 is matched somebody with somebody
Put the position in the upper end less than wet type bath apparatus 136.As described above, in the upper end position configuration less than wet type bath apparatus 136
Side ejection section 144, it is available accordingly advantageous effect reside in that, the fluid sprayed from side ejection section 144 is dispersed to outside
Situation minimize.
Sense part 150 includes multiple detecting sensors 152, the multiple detecting sensor 152 respectively with multiple wet types at
Reason unit 140 is neighboringly configured, and perceives carrier head 120.
Perceived come the movement to carrier head 120 using the multiple detecting sensors 152 for constituting sense part 150, so that
The position that carrier head 120 is presently on transfer path can be learnt.
For example, perceptually sensor 152, can be used optical sensor.Preferably, detecting sensor 152 pairs is not passed through
The side of the carrier head 120 of the influence (transducing signal that fluid causes is distorted or sensing error) of the fluid in fluid injection portion 142
Perceived, the effect of the perception degree of accuracy of carrier head 120 can be improved accordingly, and can be passed using less expensive light
Sensor.
As described above, perceive the position of carrier head 120 in advance using sense part 150, the position being only perceived in carrier head 120
Put carries out wet processed by wet processing unit 140, it is available accordingly advantageous effect reside in that, by the usage amount of fluid most
While smallization, the wet type state of substrate 10 is stably kept.
In other words, on the transfer path that the substrate for completing grinding is transferred to unloading unit, continuously spray for soaking
The fluid of substrate, can keep the wet type state of substrate, in the situation of the mode in the state of carrier head is not stopped accordingly
Under, with the presence or absence of the substrate for completing grinding independently, in integrally transfer path interval sustained firing fluid, thus in the presence of need not
Strategic point increases the problem of the usage amount of fluid, and the fluid for spraying inadvertently disperses to peripheral device, thus exists and causes respectively
Plant the problem that error is produced.But, in the utility model, fluid is sprayed in the position for only existing in substrate 10, can obtain accordingly
Advantageous effect reside in that, reduce fluid usage amount, stably keep substrate 10 wet type state.
According to such composition, as shown in Figures 7 and 8, in first abrasive areas 101 (or second abrasive areas 102) quilt
The substrate 10 of grinding is after entering behind square wet processed portion 130, in turn by configuring the multiple in rear wet processed portion 130
Wet processing unit 140, while it is wet type state to be processed continuously.Now, multiple of the configuration in rear wet processed portion 130
In wet processing unit 140, at least any one (not perceiving the place of carrier head in sense part) that carrier head 120 passes through
In, stop wet processed (fluid injection).
Afterwards, as shown in FIG. 9 and 10, center wet processed portion is entered by the substrate 10 in rear wet processed portion 130
After 130, in turn by configuring the multiple wet processing units 140 in center wet processed portion 130, wet type is continuously processed as
State.In an identical manner, configure in multiple wet processing units 140 in center wet processed portion 130, in carrier head 120
In at least any one (not perceiving the place of carrier head in sense part) for passing through, stop wet processed (fluid injection).
Referring again to Fig. 2, cleaning part 300 is formed at the sidepiece of the adjoining of grind section 100, and is in order to in unloading
Cleaned in the foreign matter of the remained on surface of the substrate 10 of unloading area P1 and set.
As reference, in the utility model, the cleaning of the so-called substrate 10 carried out in cleaning part 300, it will be appreciated that be yes
For cleaning to residue in the surface of substrate 10 (particularly, the abradant surface of substrate, also may be used to greatest extent after grinding technics is completed
The non-abrasive side of cleaning base plate) foreign matter technique.
Cleaning part 300 is formed as carrying out cleaning and the structure of drying process of multiple steps, and this practicality is new
Type is not limited or restriction by constituting the structure and layout of the cleaning station (station) of cleaning part 300.
Preferably, cleaning part 300 in order to can effectively carry out for remove residue in substrate 10 surface organic matter with
And the cleaning of other different foreign matters, it may include：Contact cleaning unit 400, it is contacted with substrate 10 in the form of physics
Surface and cleaned；Contactless cleaning unit 500, noncontact is in the surface of substrate 10 in the form of physics and enters for it
Row cleaning.Difference according to circumstances, cleaning part also may be configured as only including contact cleaning unit and contactless cleaning list
In unit any one.
Contact cleaning unit 400 is contacted with the surface of substrate 10 in the form of physics and is formed as to carry out clearly
The various structures washed.Following composition illustrated below：Contact cleaning unit 400 includes the first contact cleaning unit 402
And the second contact cleaning unit 404.
For example, the first contact cleaning unit 402 and the second contact cleaning unit 404 may include cleaning brush 410, it is described
Cleaning brush 410 is contacted with the surface of substrate 10 in the form of rotating.
Complete grinding technics substrate 10 by commonly use axle (spindle) (not shown) state of rotation under,
Can be cleaned by a pair of the cleaning brush for rotating.Difference according to circumstances also may be configured as, do not rotated in substrate but
In the state of fixation, cleaned by cleaning brush.Differently, only one cleaning brush can only to a plate face of substrate (for example,
Abradant surface) cleaned.
Additionally, during being cleaned by cleaning brush, in order to improve the friction by cleaning brush 410 and substrate 10
The effect for contacting and being cleaned, and chemicals (for example, SC1, fluoric acid) can be supplied during cleaning brush is contacted with substrate 10
Award the contact site of cleaning brush 410 and substrate 10.
Contactless cleaning unit 500 in the form of physics noncontact (non-contact) in the surface of substrate 10, and
It is formed as the various structures that can be cleaned.Following composition illustrated below：Contactless cleaning unit 500 includes first
The contactless cleaning unit 504 of contactless cleaning unit 502 and second.Difference according to circumstances, contactless cleaning list
Unit can be also made up of only one cleaning unit.
Contactless cleaning unit 500 can be configured to carry out in several ways clearly according to required condition and design pattern
Wash.For example, contactless cleaning unit 500 can be cleaned by following form：Made to the surface injection such as chemistry of substrate 10
The same cleaning fluids such as product, pure water (DIW), steam, xenogenesis fluid, or supply vibrational energy (million sound to the surface of substrate 10
Ripple (megasonic)), or to the surface sparged isopropanol (IPA) of substrate 10.
In addition, according to embodiment of the present utility model, illustrating that each cleaning unit of cleaning part is (contactless clear
Wash unit or contact cleaning unit) it is arranged on simple layer, difference according to circumstances, each cleaning unit of cleaning part can shape
As the multi-ply construction along above-below direction lamination.
Also, the sidepiece of the adjoining in cleaning part 300 is provided with carrying-in/carrying-out portion (the Equipment Front of substrate 10
End Module；EFEM) 600, the substrate 10 and the substrate 10 for the treatment of completion that will process (grinding and cleaning) pass through substrate 10
Carrying-in/carrying-out portion 600 is moved into or is taken out of.
For example, substrate 10 can be loading on wafer transfer box (front opening unified pod；FOUP) shape
State, moves into the carrying-in/carrying-out portion 600 of substrate 10, or is taken out of from the carrying-in/carrying-out portion 600 of substrate 10.Difference according to circumstances, utilizes
Other storage containers replace the wafer transfer box can also be by substrate carrying-in/carrying-out, and the utility model is not by substrate 10
The limitation or restriction of carrying-in/carrying-out construction.
In addition, Fig. 7 to Figure 10 is the wet processing operation for illustrating the substrate 10 in the wet processed portion 130 according to Fig. 2
Figure.And it is identical for foregoing composition and same or equivalent equivalent to the imparting of identical part in identical reference mark
Number, and omit detailed description thereof.
Reference picture 11, includes according to substrate board treatment of the present utility model：Grinding steps S10, using grind section 100 pairs
Substrate 10 carries out cmp (CMP) technique；Transfer step S20, the substrate of grinding technics will be completed using carrier head 120
10 unloading areas for being radially disposed at grind section 100 along transfer road set in advance are transferred；Wet processed step S40, complete
Into grinding technics substrate 10 along transfer path constantly transfer during, substrate 10 is processed as wet type (wetting) state.
Step 1：
First, cmp (CMP) technique S10 is carried out to substrate 10 using grind section 100.
In grinding steps S10, load on the substrate 10 of loading area P2 to be close to the shape of carrier head (the 120 of Fig. 3)
State, is contacted with above grinding pad in the form of rotating, and thus carries out chemical mechanical milling tech, and lapping liquid is supplied in grinding
Pad.
Step 2：
Next, the substrate 10 of grinding technics will be completed using carrier head 120, along transfer path set in advance to setting
It is placed in the unloading area transfer S20 of grind section 100.
For example, in transfer step S20, carrier head 120 since loading unit, by grinding flat plate (110 or 110 ')
Moved along the circulating path of about quadrangle form, the substrate 10 that can will complete grinding technics is moved to unloading area
Send.
Step 3：
Next, during the substrate 10 for completing grinding technics is constantly transferred along transfer path, substrate 10 is processed
It is wet type (wetting) state S40.
In wet processed step S40, during substrate 10 is constantly moved along transfer path, the surface of substrate 10 is not done
Wet state that is dry but remaining humidity.
Preferably, in wet processed step, the position of the carrier head 120 to being moved along transfer path perceives
S30, the position being only perceived in carrier head 120 carries out wet processed to substrate 10.
For example, in wet processed step, substrate 10 is processed as wet type state using wet processed portion 130, and
In multiple wet processing units 140, only carrier head 120 be perceived at least any one substrate 10 is processed as wet type shape
State, in multiple wet processing units 140, S42 is interrupted in the perceived wet processed at least in another of carrier head 120
(reference picture 6 to Figure 10), the wet processed portion includes multiple wet processing units 140 and sense part 150, the multiple wet type
Processing unit 140 is configured along transfer path in the form of separating, and substrate 10 independently is processed as into wet type state, the sense
Know that the position of the 150 pairs of carrier heads 120 moved along transfer path in portion perceives.
In wet processed step, substrate 10 can be carried out in several ways according to required condition and design pattern wet
Formula treatment.For example, in wet processed step, fluid is sprayed to substrate 10, so that wet processed can be carried out to substrate 10.It is preferred that
Ground, in wet processed step, fluid is sprayed to the plane perpendicular of substrate 10, and available effect is accordingly, keeps substrate
10 wet type state, meanwhile, before the substrate 10 for completing grinding is transplanted on cleaning part, the impact caused by fluid (is hung down
Straight impact) once remove the foreign matter for being present in substrate 10.Meanwhile, as the fluid used in wet processed step, can make
With in fluid liquid (for example, pure water) and steam at least any one.
Also, also include side injecting step S41, moved to along transfer path in the side injecting step S41
Carrier head 120 side injection fluid.
As described above, in side injecting step S41, fluid (fluid liquid or steaming are sprayed to the side of carrier head 120
Vapour), so as to remove the foreign matter for being present in the side of carrier head 120.As described above, the substrate 10 to completing grinding technics is transferred
Carrier head 120 by side ejection section 144 can by pre-wash so that it is available advantageous effect reside in that, will because may
Remain in carrier head 120 foreign matter and substrate 10 grinding before be contaminated or damage situation minimize (reference picture 4).
As described above, although illustrated with reference to preferred embodiment of the present utility model, it is understood that being, if phase
Answer the skilled practitioner of technical field, no more than the thought of the present utility model for being recorded in following Patent right requirements and
In the range of field various modifications and changes can be carried out to the utility model.
Label declaration
10：Substrate 100：Grind section
110：Grinding flat plate 120：Carrier head
130：Wet processed portion 136：Wet type bath apparatus
140：Wet processing unit 142：Fluid injection portion
144：Side ejection section 150：Sense part
300：Cleaning part 400：Contact cleaning unit
500：Contactless cleaning unit
Claims (10)
1. a kind of base plate processing system, it is characterised in that including：
Grind section, it carries out chemical mechanical milling tech to substrate；
Carrier head, it will complete the substrate of grinding technics along transfer path set in advance, to being arranged at the grinding
The unloading area transfer in portion；
Wet processed portion, it is arranged at the grind section along the transfer path, and completes the substrate of grinding technics
During continuously being transferred along the transfer path by processing substrate be wet type state.
2. base plate processing system according to claim 1, it is characterised in that the wet processed portion includes：
Multiple wet processing units, it is configured along the transfer path in the form of separating, and independently by the substrate
It is wet type state to manage；
Sense part, the position of the carrier head to being moved along the transfer path perceives,
In the multiple wet processing unit, only the carrier head be perceived at least any one by the processing substrate
It is wet type state.
3. base plate processing system according to claim 2, it is characterised in that
The sense part includes multiple detecting sensors, the multiple detecting sensor respectively with the multiple wet processing unit
Neighboringly configure, and perceive the carrier head.
4. base plate processing system according to claim 3, it is characterised in that
The detecting sensor is optical sensor.
5. base plate processing system according to claim 2, it is characterised in that
The wet processed portion includes wet type bath apparatus, and the carrier head is contained in the wet type and bathes in moveable form,
The wet processing unit includes fluid injection portion, and the fluid injection portion is inside the wet type bath apparatus to the base
Plate sprays fluid.
6. base plate processing system according to claim 5, it is characterised in that
The fluid is sprayed to the bottom surface of the substrate in the fluid injection portion.
7. base plate processing system according to claim 5, it is characterised in that
The fluid be in fluid liquid and steam at least any one.
8. base plate processing system according to claim 5, it is characterised in that also include：
Side ejection section, it sprays fluid in the inside of the wet type bath apparatus to the side of the carrier head.
9. base plate processing system according to claim 8, it is characterised in that
The wet type bath apparatus are formed as the height with the covering carrier head side,
The side ejection section configuration is in the position less than the wet type bath apparatus upper end.
10. base plate processing system as claimed in any of claims 1 to 9, it is characterised in that
The grind section, including：
First abrasive areas, its configuration is in multiple first grinding flat plates；
Second abrasive areas, it is facing with first abrasive areas, and is configured with multiple second grinding flat plates,
The wet processed portion, including：
Rear wet processed portion, its configuration is at the rear end of first abrasive areas and the rear of second abrasive areas
End；
Center wet processed portion, it is configured between first abrasive areas and second abrasive areas,
In the substrate that first abrasive areas or second abrasive areas are ground, at by the rear wet type
During reason portion and the center wet processed portion, wet type state is continuously processed as.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160085284A KR20180005346A (en) | 2016-07-06 | 2016-07-06 | Substrate procesing system and substrate processing methode |
| KR10-2016-0085284 | 2016-07-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206259319U true CN206259319U (en) | 2017-06-16 |
Family
ID=59026374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621292696.0U Active CN206259319U (en) | 2016-07-06 | 2016-11-29 | Base plate processing system |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20180005346A (en) |
| CN (1) | CN206259319U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114975201A (en) * | 2021-02-26 | 2022-08-30 | 凯斯科技股份有限公司 | Substrate transfer system |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117320278A (en) * | 2022-06-24 | 2023-12-29 | 扬博科技股份有限公司 | Wet process processing equipment and rotating carriers used therefor |
-
2016
- 2016-07-06 KR KR1020160085284A patent/KR20180005346A/en not_active Ceased
- 2016-11-29 CN CN201621292696.0U patent/CN206259319U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114975201A (en) * | 2021-02-26 | 2022-08-30 | 凯斯科技股份有限公司 | Substrate transfer system |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180005346A (en) | 2018-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180417 Address after: Korea city Daoan Patentee after: Case Polytron Technologies Inc Address before: Korea city Daoan Patentee before: K. C. Tech Co., Ltd. |
|
| TR01 | Transfer of patent right |