CN209487511U - Display panel and display device - Google Patents

Abstract

The application provides a display panel and a display device. The display panel is provided with a first display area and a second display area, a photosensitive element can be arranged below the first display area, and the display panel comprises a substrate, a driving circuit layer, a light-emitting functional film layer and a conducting layer which are positioned in the first display area and the second display area; the driving circuit layer is formed on the substrate; the light-emitting function film layer is formed on the driving circuit layer; the conducting layer is formed on the light-emitting functional film layer, and the thickness of the conducting layer positioned in the first display area is smaller than that of the conducting layer positioned in the second display area.

Description

Display panel and display device

technical field

The present application relates to the field of display technology, in particular to a display panel and a display device.

Background technique

With the rapid development of electronic devices, users have higher and higher requirements for screen-to-body ratio, so that the full-screen display of electronic devices has attracted more and more attention from the industry. Traditional electronic devices such as mobile phones, tablet computers, etc., need to integrate such as front camera, earpiece, and infrared sensing components, so it is possible to set the camera, earpiece, and infrared sensing elements in the slotted area by slotting (Notch) on the display screen. Components, etc., but the slotted area cannot be used to display the picture, such as the notch screen in the prior art, or the method of opening holes on the screen. For electronic equipment that realizes the camera function, external light can pass through the screen on the screen. The opening enters the photosensitive element located under the screen. However, none of these electronic devices is a full screen in the true sense, and cannot be displayed in all areas of the entire screen, for example, images cannot be displayed in the camera area.

Utility model content

According to the first aspect of the embodiments of the present application, a display panel is provided, the display panel has a first display area and a second display area, a photosensitive element can be arranged under the first display area, and the display panel includes The substrates of the first display area and the second display area, the driving circuit layer, the light emitting function film layer and the conductive layer;

The driving circuit layer is formed on the substrate;

The light-emitting functional film layer is formed on the driving circuit layer;

The conductive layer is formed on the light-emitting functional film layer, and the thickness of the conductive layer located in the first display area is smaller than the thickness of the conductive layer located in the second display area.

In one embodiment, the material of the conductive layer located in the first display area is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide, or, the conductive layer located in the first display area The material of the conductive layer of the display area includes at least one of Mg and Ag; such setting can further improve the transparency of the first display area.

Preferably, the ratio of the mass of Mg to the mass of Ag ranges from 1:4 to 1:20;

Preferably, the conductive layer is a cathode layer;

Preferably, the light-emitting functional film layer includes an organic light-emitting material and an electron injection layer located between the organic light-emitting material and the conductive layer, and the material of the electron injection layer includes Ag, and Mg, K, Li, Cs at least one of;

Preferably, the ratio of the mass of Ag in the electron injection layer to the total mass of the electron injection layer ranges from 1:5 to 1:21.

In one embodiment, the ratio of the thickness of the conductive layer located in the first display area to the thickness of the conductive layer located in the second display area ranges from 0.25:1 to 0.85:1;

Preferably, the conductive layer located in the first display area has a thickness in the range of 5-10 nm, and the conductive layer located in the second display area has a thickness in the range of 12-20 nm. Such setting can ensure that the light transmittance of the first sub-conductive layer 41 is good, and at the same time ensure that the conductive layer has good electrical conductivity and mechanical properties, so that the display panel can work normally.

In one embodiment, the substrate includes a first substrate and a second substrate, the first substrate is located in the first display area, the second substrate is located in the second display area, and the first substrate is located in the second display area. The light transmittance is greater than the light transmittance of the second substrate; since the light transmittance of the first substrate is greater than the light transmittance of the second substrate, the light transmittance of the first display area can be further mentioned.

Preferably, the second substrate is a stack of overlapping layers of multiple organic material layers and multiple layers of inorganic material; the first substrate includes at least a transparent material layer, and the thickness of the first substrate is the same as that of the The thickness of the second substrate is the same; when the thickness of the first substrate is the same as the thickness of the second substrate, it is beneficial to set the overall display panel to the same thickness, so that the overall display panel is more beautiful.

Preferably, the first substrate further includes a stack of overlapping organic material layers and inorganic material layers, and the stack of the first substrate and the stack of the second substrate share a part of the film layer material; When the laminate of the first substrate and the laminate of the second substrate share a part of the film material, the layer of the film material shared by the first substrate and the second substrate can be formed in the same process step, thereby The preparation process flow of the first substrate and the second substrate can be simplified.

Preferably, the stack of the first substrate includes a first organic layer and a first inorganic layer on the first organic layer, and the stack of the second substrate includes a first organic layer stacked sequentially from bottom to top. Two organic layers, a second inorganic layer, a third organic layer and a third inorganic layer, the first organic layer and part of the third organic layer share the same film layer material, the first inorganic layer and the third organic layer The inorganic layers share the same film layer material, the thickness of the first organic layer is smaller than the thickness of the third organic layer, and the thickness of the first inorganic layer is equal to the thickness of the third inorganic layer;

Preferably, the transparent material layer of the first substrate is arranged below the laminated layer of the first substrate, and the lower end surface of the transparent material layer of the first substrate is in contact with the lower surface of the second substrate end flush;

Preferably, the light transmittance of the transparent material layer of the first substrate is greater than 90%;

Preferably, the material of the transparent material layer of the first substrate includes at least one of PET and PC; the light transmittance of PET and PC are both greater than 90%, which can make the light transmittance of the first substrate higher.

Preferably, the light transmittance of the second substrate is within 30%-60%. Such setting can reduce the light transmittance of the second display area and increase the brightness of the second display area when displaying.

In one embodiment, the bottom of the first substrate, the bottom of the second substrate, between the side of the transparent material layer of the first substrate and the second substrate and/or the first substrate A protective layer is provided between the upper end of the transparent material layer and the lamination of the first substrate; the protective layer can protect the first substrate and the second substrate, improve the mechanical strength of the display panel, and then improve the display panel service life.

Preferably, the material of the protection layer includes at least one of IZO, ITO, SiNx and SiOx. The above-mentioned materials can make the light transmittance of the protective layer higher, and prevent the setting of the protective layer from affecting the light transmittance of the first display area.

In one embodiment, the driving circuit layer of the first display area includes an anode layer; when the driving circuit layer of the first display area only includes an anode layer, the structure of the driving circuit layer of the first display area is simplified, which can improve the performance of the second display area. Transparency of the driving circuit layer of a display area.

Preferably, the driving circuit layer of the first display area includes an anode layer and a transparent organic material film layer arranged under the anode layer; the transparent organic material film layer arranged on the anode layer can increase the first display The thickness of the driving circuit layer of the first display area is the same as the thickness of the driving circuit layer of the second display area.

Preferably, the driving circuit layer of the second display area includes multiple insulating layers, and the thickness of the transparent organic material film layer is the same as the total thickness of the multi-layer insulating layers of the second display area. In this way, the thickness of the part of the driving circuit layer located in the first display area is the same as that of the part located in the second display area, which helps to make the thickness of the display panel roughly the same as a whole, thereby improving the aesthetics of the display panel.

In one embodiment, the first display area and the second display area are AMOLED display areas;

Preferably, the driving circuit layer located in the first display area includes a plurality of first driving circuit units, and the first driving circuit unit includes transistors and storage capacitors; the driving circuit layer located in the second display area includes a plurality of The second drive circuit unit, the second drive circuit unit includes storage capacitors and transistors, the number of transistors in the first drive circuit unit is less than the number of transistors in the second drive circuit unit; so set, the first drive circuit The structural complexity of the unit is less than that of the second driving circuit unit, so that the area of the conductive layer in the part of the driving circuit layer located in the first display area is smaller, thereby improving the light transmittance of the first display area.

Preferably, the transistor of the first drive circuit unit includes a first transistor, and the storage capacitor of the first drive circuit unit includes a first plate and a second plate; the first drive circuit unit has a first conductive layer , a part of the first conductive layer is used as the first plate, and the other part is used as the gate of the first transistor; so set, the gate of the first transistor, the first plate of the storage capacitor and the two When the connection between them can be completed in the same step, there is no need to prepare the conductive structure between the gate of the first transistor and the first plate of the storage capacitor after the formation of the two, which can simplify the manufacturing process of the first driving circuit unit. Wherein, the first pole plate may be the lower pole plate of the storage capacitor, and the second pole plate may be the upper pole plate of the storage capacitor.

Preferably, the driving circuit layer located in the first display area further includes a power line, a power line, a data line, a scanning line, and an anode layer corresponding to a plurality of first driving circuit units one by one, and the driving circuit in the first display area layer also has a second conductive layer, a part of the second conductive layer is used as the second plate, and another part is used as the power line; the transistor of the first driving circuit unit also includes a second transistor, and the first The source of a transistor is connected to the second conductive layer, the drain of the first transistor is connected to the corresponding anode layer, the gate of the second transistor is connected to the scanning line, and the gate of the second transistor is connected to the scanning line. The drains are respectively connected to the first conductive layer, and the source of the second transistor is connected to the data line; so set, the power line, the second plate of the storage capacitor and the connection between them can be connected through the same When the steps are completed, there is no need to prepare the conductive structure between the power line and the second plate of the storage capacitor after the formation of the two, which can simplify the manufacturing process flow of the first driving circuit unit.

Preferably, the materials of the first transistor, the second transistor, the storage capacitor, the data line, the scan line and the anode layer are made of transparent materials; thus, the first display area can be The light transmittance of the driving circuit layer is relatively high, thereby increasing the light transmittance of the first display region.

Preferably, the transparency of the transparent material is greater than or equal to 90%;

Preferably, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide;

Preferably, the driving circuit layer located in the first display area further includes a power supply line, a data line, a first scanning line, a second scanning line, a reference potential line, and an anode layer corresponding to a plurality of first driving circuit units one by one. The driving circuit layer of the first display area also has a third conductive layer, a part of the third conductive layer is used as the second plate, and the other part is used as the corresponding anode layer; the transistor of the first driving circuit unit also It includes a third transistor and a fourth transistor, the source of the third transistor is connected to the data line, the gate of the third transistor is connected to the first scan line, and the drain of the third transistor is connected to the The first conductive layer is connected, the drain of the first transistor is connected to the power supply line, the source of the first transistor is connected to the third conductive layer, the gate of the fourth transistor is connected to the The second scanning line is connected, the source of the fourth transistor is connected to the reference potential line, and the drain of the fourth transistor is connected to the third conductive layer; so set, the anode layer, the first storage capacitor When the two plates and the connection between the two can be completed in the same step, there is no need to prepare the conductive structure between the two after the formation of the anode layer and the second plate of the storage capacitor, which can simplify the preparation of the first drive circuit unit process flow.

Preferably, the first transistor, the third transistor, the fourth transistor, the storage capacitor, the data line, the first scan line, the second scan line, the reference potential line And the anode layer is made of a transparent material; in this way, the light transmittance of the driving circuit layer in the first display area can be made higher, thereby increasing the light transmittance of the first display area.

Preferably, the transparency of the transparent material is greater than or equal to 90%;

Preferably, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide.

According to the second aspect of the embodiments of the present application, there is provided a display device, which is characterized in that it includes:

The device body has a device area;

The above-mentioned display panel is covered on the device body;

Wherein, the device area is located below the first display area, and a photosensitive element for collecting light through the first display area is arranged in the device area.

In the above-mentioned display device, since the thickness of the conductive layer in the first display area of the display panel it includes is smaller than the thickness of the conductive layer in the second display area, the light transmittance of the first display area can be greater than that of the second display area. light transmittance, so that the photosensitive element disposed under the first display area can receive enough light to ensure that the photosensitive element can work normally.

In one embodiment, the photosensitive element includes a camera and/or a light sensor.

According to a third aspect of the embodiments of the present application, a transparent OLED substrate is provided, the transparent OLED substrate comprising:

Substrate;

a driving circuit layer formed on the substrate;

A light-emitting functional film layer formed on the driving circuit layer;

Wherein, the driving circuit layer includes a plurality of first driving circuit units, the first driving circuit unit includes a storage capacitor and a first transistor, and the storage capacitor includes a first plate and a second plate; the first The driving circuit unit has a first conductive layer, a part of the first conductive layer serves as the first plate, and another part serves as the gate of the first transistor. In this way, when the gate of the first transistor, the first plate of the storage capacitor and the connection between the two can be completed in the same step, there is no need to reconnect it after the gate of the first transistor and the first plate of the storage capacitor are formed. The preparation of the conductive structure between the two can simplify the preparation process of the first driving circuit unit. Wherein, the first pole plate may be the upper pole plate of the storage capacitor, and the second pole plate may be the lower pole plate of the storage capacitor.

In one embodiment, the driving circuit layer further includes a power supply line, a data line, a scanning line, and an anode layer corresponding to a plurality of first driving circuit units one by one, and the driving circuit layer also has a second conductive layer, so A part of the second conductive layer is used as the second plate, and another part is used as the power line; the first drive circuit unit also includes a second transistor, and the source of the first transistor is connected to the second conductive layer. layer connection, the drain of the first transistor is connected to the corresponding anode layer, the gate of the second transistor is connected to the scanning line, and the drain of the second transistor is respectively connected to the first conductive layer , the source of the second transistor is connected to the data line; in this way, when the power line, the second plate of the storage capacitor and the connection between the two can be completed in the same step, there is no need to connect the power line, the storage capacitor After the second electrode plate is formed, the conductive structure between the two is prepared, which can simplify the manufacturing process of the first driving circuit unit.

Preferably, the first transistor, the second transistor, the storage capacitor, the data line, the scan line and the anode layer are made of transparent materials; thus, the driving circuit of the transparent OLED substrate can be made The light transmittance of the layer is relatively high, thereby improving the light transmittance of the transparent OLED substrate.

Preferably, the transparency of the transparent material is greater than or equal to 90%;

Preferably, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide.

In one embodiment, the driving circuit layer further includes a power supply line, a data line, a first scanning line, a second scanning line, a reference potential line, and an anode layer corresponding to a plurality of first driving circuit units one by one. The driving circuit layer also has a third conductive layer, a part of the third conductive layer is used as the second plate, and another part is used as the corresponding anode layer; the first driving circuit unit also includes a third transistor and a fourth transistor , the source of the third transistor is connected to the data line, the gate of the third transistor is connected to the first scan line, and the drain of the third transistor is connected to the first conductive layer, The drain of the first transistor is connected to the power supply line, the source of the first transistor is connected to the third conductive layer, and the gate of the fourth transistor is connected to the second scanning line, so The source electrode of the fourth transistor is connected to the reference potential line, and the drain electrode of the fourth transistor is connected to the third conductive layer; so set, the anode layer, the second plate of the storage capacitor and between the two When the connection can be completed through the same step, there is no need to prepare the conductive structure between the anode layer and the second plate of the storage capacitor after the formation of the two, which can simplify the preparation process of the first drive circuit unit.

Preferably, the first transistor, the third transistor, the fourth transistor, the storage capacitor, the data line, the first scan line, the second scan line, the reference potential line And the anode layer is made of transparent material; in this way, the light transmittance of the driving circuit layer of the transparent OLED substrate can be made higher, and then the light transmittance of the transparent OLED substrate can be improved.

Preferably, the transparency of the transparent material is greater than or equal to 90%;

Preferably, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide.

According to a fourth aspect of the embodiments of the present application, there is provided a transparent display panel, the transparent display panel includes the above-mentioned transparent OLED substrate and a first encapsulation layer, and the first encapsulation layer is arranged on a surface away from the transparent OLED substrate. side of the substrate.

In the above-mentioned transparent display panel, since a part of the first conductive layer of the transparent OLED substrate serves as the first plate of the storage capacitor, and the other part serves as the gate of the first transistor, the gate of the first transistor and the first electrode of the storage capacitor When the plate and the connection between the two can be completed in the same step, it is not necessary to prepare the conductive structure between the gate of the first transistor and the first plate of the storage capacitor after the formation of the two, which can simplify the first drive circuit Unit preparation process flow.

According to a fifth aspect of the embodiments of the present application, an array substrate is provided, the array substrate includes a first OLED substrate and a second OLED substrate, the first OLED substrate includes the above-mentioned transparent OLED substrate, and the second OLED The substrate is a non-transparent OLED substrate;

The first OLED substrate and the second OLED substrate share the same substrate, and the light-emitting functional film layer of the first OLED substrate and the light-emitting functional film layer of the second OLED substrate are formed in the same process.

In the above-mentioned array substrate, since a part of the first conductive layer of the first OLED substrate serves as the first plate of the storage capacitor, and the other part serves as the gate of the first transistor, the gate of the first transistor, the first electrode of the storage capacitor When the plate and the connection between the two can be completed in the same step, it is not necessary to prepare the conductive structure between the gate of the first transistor and the first plate of the storage capacitor after the formation of the two, which can simplify the first drive circuit Unit preparation process flow.

In one embodiment, said first OLED substrate is at least partially surrounded by said second OLED substrate;

Preferably, the driving circuit layer of the second OLED substrate includes a plurality of second driving circuit units, and the number of transistors included in the second driving circuit units is greater than the number of transistors included in the first driving circuit units. In this way, the structural complexity of the first driving circuit unit is less than that of the second driving circuit unit, so that the area of the conductive layer of the driving circuit layer of the first OLED substrate is smaller, thereby improving the light transmission of the first OLED substrate. Rate.

According to a sixth aspect of the embodiments of the present application, a display screen is provided, the display screen includes the above-mentioned array substrate and a second packaging structure, the second packaging structure is arranged on the array substrate, and the array substrate A photosensitive element can be disposed under the first OLED substrate.

In the above-mentioned display screen, since a part of the first conductive layer of the first OLED substrate serves as the first plate of the storage capacitor, and the other part serves as the gate of the first transistor, the gate of the first transistor, the first electrode of the storage capacitor When the plate and the connection between the two can be completed in the same step, it is not necessary to prepare the conductive structure between the gate of the first transistor and the first plate of the storage capacitor after the formation of the two, which can simplify the first drive circuit The manufacturing process flow of the unit, thereby simplifying the manufacturing process flow of the driving circuit layer of the first OLED substrate.

According to a seventh aspect of the embodiments of the present application, a display device is provided, and the display device includes:

The device body has a device area;

The above-mentioned display screen is covered on the device body;

Wherein, the device area is located under the first OLED substrate, and a photosensitive element for collecting light through the first OLED substrate is arranged in the device area.

Preferably, the photosensitive element includes a camera and/or a light sensor.

In the display panel and display device provided by the embodiments of the present application, since the thickness of the conductive layer in the first display area of the display panel is smaller than the thickness of the conductive layer in the second display area, the light transmittance of the first display area can be greater than that of the second display area. The light transmittance of the second display area, so that the photosensitive element arranged under the first display area can receive enough light to ensure that the photosensitive element can work normally;

In the transparent OLED substrate, transparent display panel, array substrate, display screen, and display device provided in the embodiments of the present application, since a part of the first conductive layer of the transparent OLED substrate serves as the first plate of the storage capacitor, the other part serves as the first plate of the first transistor. gate, then the gate of the first transistor, the first plate of the storage capacitor and the connection between the two can be completed in the same step, without the need to form the gate of the first transistor and the first plate of the storage capacitor Further preparing the conductive structure between the two can simplify the manufacturing process of the first driving circuit unit, and further simplify the manufacturing process of the transparent OLED substrate, transparent display panel, array substrate, display screen and display device.

Description of drawings

FIG. 1 is a top view of a display panel provided by an embodiment of the present application;

Fig. 2 is a sectional view of the display panel shown in Fig. 1 cut along CC';

Fig. 3 is a partial cross-sectional view of a display panel shown in Fig. 1 cut along CC';

4 is a cross-sectional view of a substrate of the display panel shown in FIG. 1;

Fig. 5 is a partial sectional view of another display panel shown in Fig. 1 cut along CC';

FIG. 6 is a cross-sectional view of a first display area of a display panel provided by an embodiment of the present application;

FIG. 7 is a circuit diagram of a first driving circuit unit provided in an embodiment of the present application;

Fig. 8 is a cross-sectional view of a first display area of another display panel provided by an embodiment of the present application;

FIG. 9 is a circuit diagram of another first driving circuit unit provided by the embodiment of the present application;

Fig. 10 is a side view of a display device provided by an embodiment of the present application;

FIG. 11 is a schematic structural view of the device body of the display device shown in FIG. 10;

Fig. 12 is a schematic structural diagram of the substrate layer provided by the embodiment of the present application;

Fig. 13 is a schematic structural diagram of the first intermediate structure provided by the embodiment of the present application;

Fig. 14 is a schematic structural diagram of a second intermediate structure provided by an embodiment of the present application;

Fig. 15 is a schematic structural diagram of a third intermediate structure provided by an embodiment of the present application;

Fig. 16 is a schematic structural diagram of a fourth intermediate structure provided by an embodiment of the present application;

Fig. 17 is a schematic structural diagram of a fifth intermediate structure provided by an embodiment of the present application;

Fig. 18 is a schematic structural diagram of a sixth intermediate structure provided by an embodiment of the present application;

Fig. 19 is a schematic structural diagram of a seventh intermediate structure provided by an embodiment of the present application;

Fig. 20 is a schematic structural view of a transparent OLED substrate provided by an embodiment of the present application;

Fig. 21 is a cross-sectional view of a transparent OLED substrate provided by an embodiment of the present application;

Fig. 22 is a cross-sectional view of another transparent OLED substrate provided by an embodiment of the present application.

Detailed ways

Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with this application. Rather, they are merely examples of means consistent with aspects of the present application as recited in the appended claims.

The display panel and its manufacturing method in the embodiments of the present application will be described in detail below with reference to the accompanying drawings. In the case of no conflict, the features in the following embodiments and implementation manners may complement each other or be combined with each other.

On smart electronic devices such as mobile phones and tablet computers, since photosensitive elements such as front cameras and light sensors need to be integrated, in order to realize a full screen, the photosensitive elements can be arranged on the backlight surface of the display panel of the electronic device. Generally, the light transmittance of the existing display panel is low, and it is difficult for the photosensitive element arranged on the backlight surface of the display panel to receive enough light, resulting in the photosensitive element not working normally, such as the light collected by the camera arranged on the backlight surface of the display panel. Less, and the quality of the captured image is lower.

The research of the inventors found that the reason for this problem is that the thickness of the film layer of the display panel is large, resulting in low light transmittance.

To solve the above problems, an embodiment of the present application provides a display panel. Fig. 1 is a top view of a display panel provided by an embodiment of the present application, and Fig. 2 is a cross-sectional view of the display panel shown in Fig. 1 along CC'. As shown in FIG. 1 and FIG. 2 , the display panel 100 has a first display area A and a second display area B, and a photosensitive element can be disposed under the first display area A. The display panel 100 includes a substrate 1 located in the first display area A and the second display area B, a driving circuit layer 2 , a light-emitting functional film layer 3 and a conductive layer 4 . The driving circuit layer 2 is formed on the substrate 1, the light-emitting functional film layer 3 is formed on the driving circuit layer 2, the conductive layer 4 is formed on the light-emitting functional film layer 3, and is located on the The thickness d1 of the conductive layer in the first display area A is smaller than the thickness d2 of the conductive layer in the second display area B.

In the embodiment of the present application, for the convenience of description, the direction from the substrate 1 to the driving circuit layer 2 is defined as up, and the direction from the driving circuit layer 2 to the substrate 1 is defined as down, so as to determine the up and down directions. It is easy to understand that different ways of defining directions will not affect the actual operation content of the process and the actual shape of the product.

In the display panel 100 provided in the embodiment of the present application, since the thickness of the conductive layer located in the first display area A is smaller than the thickness of the conductive layer located in the second display area B, the light transmittance of the first display area A can be greater than that of the second display area. The light transmittance of area B, so that the photosensitive element disposed under the first display area A can receive enough light to ensure that the photosensitive element can work normally.

The second display area B may at least partially surround the first display area A. In the display panel 100 shown in FIG. 1, the second display area B completely surrounds the first display area A. In other embodiments In this case, the second display area B may partially surround the first display area A. The second display area B is the main display area of the display panel 100, usually occupying more than 90% of the area of the display panel, and the lower part of the first display area A can usually be used to install photosensitive devices such as cameras and light sensors.

In one embodiment, referring to FIG. 3 , the part of the conductive layer 4 located in the first display area A is the first sub-conductive layer 41, and the part of the conductive layer 4 located in the second display area includes the second sub-conductive layer 42 and the part located in the second display area. The third sub-conductive layer 43 on the second sub-conductive layer 42 .

Wherein, the material of the first sub-conductive layer 41 is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide; or, the material of the first sub-conductive layer 41 includes Mg and Ag. at least one of . Preferably, the first sub-conductive layer 41 includes two materials of Mg and Ag, and the ratio of the mass of Mg to the mass of Ag is in the range of 1:4˜1:20. Such an arrangement can ensure that the light transmittance of the first display area A is relatively large, so that the sensor disposed under the first display area A can receive more light.

One of the second sub-conductive layer 42 and the third sub-conductive layer 43 may be made of the same material as the first sub-conductive layer 41 and formed in the same process step. When the second sub-conductive layer 42 and the first sub-conductive layer 41 are formed simultaneously, when forming the conductive layer 4, the second sub-conductive layer 42 and the first sub-conductive layer 41 are formed simultaneously first, and then the second sub-conductive layer 42 is formed on the third sub-conductive layer 43, the second sub-conductive layer 42 is made of the same material as the first sub-conductive layer 41, and the material of the third sub-conductive layer 43 may include at least one of Mg and Ag. When the third sub-conductive layer 43 is formed simultaneously with the first sub-conductive layer 41, when forming the conductive layer 4, first form the second sub-conductive layer 42, and then simultaneously form the first sub-conductive layer 41 and the third sub-conductive layer 43 The materials of the first sub-conductive layer 41 and the third sub-conductive layer 43 are the same, and the material of the second sub-conductive layer 42 may include at least one of Mg and Ag.

In one embodiment, the conductive layer 4 may be a cathode layer. Wherein, the cathode layer may be a surface electrode, covering the entire area of the display panel 100 . That is, the first sub-conductive layer 41 covers the first display area A, and the second sub-conductive layer 42 and the third sub-conductive layer 43 cover the second display area B. Referring to FIG.

In one embodiment, the thickness of the first sub-conductive layer 41 located in the first display area A is different from the thickness of the conductive layer located in the second display area B (that is, the second sub-conductive layer 42 and the third sub-conductive layer 42 ). The ratio of the total thickness of the layer 43 ) may range from 0.25:1 to 0.85:1, such as 0.3, 0.5, 0.7, 0.85, etc. Wherein, in the embodiment of the present application, the thickness refers to the dimension of the film layer in the up-down direction.

Further, the thickness range of the first sub-conductive layer 41 located in the first display area A may be 5-10 nm, and the total thickness of the second sub-conductive layer 42 and the third sub-conductive layer 43 located in the second display area B The range can be 12 ~ 20nm. Such setting can ensure that the light transmittance of the first sub-conductive layer 41 is good, and at the same time ensure that the conductive layer 4 has good electrical conductivity and mechanical properties, so that the display panel 100 can work normally.

In one embodiment, the light-emitting functional film layer 3 may include an organic light-emitting material and a common layer. Wherein, the common layer may include an electron injection layer, an electron transport layer, a hole injection layer and a hole transport layer. The electron injection layer and the electron transport layer are located between the organic light-emitting material and the conductive layer 4 , and the hole injection layer and the hole transport layer are located between the driving circuit layer 2 and the light-emitting functional film layer 3 . Wherein, the electron injection layer, the electron transport layer, the hole injection layer and the hole transport layer are all arranged on the whole layer, covering the first display area A and the second display area B.

Further, the material of the electron injection layer includes Ag, and at least one of Mg, K, Li, and Cs. Preferably, the ratio of the mass of Ag in the electron injection layer to the total mass of the electron injection layer ranges from 1:5 to 1:21, that is, the ratio of the mass of Ag in the electron injection layer to the mass of other components The ratio range is 1:4～1:20.

The display panel 100 can also include a pixel definition layer 7 disposed on the same layer as the light-emitting functional film layer 3 , and a pixel opening can be opened on the pixel definition layer 7 , and the organic light-emitting material of the light-emitting functional film layer 3 is disposed in the pixel opening.

In one embodiment, referring to FIG. 1 again, the substrate 1 may include a first substrate 11 and a second substrate 12, the first substrate 11 is located in the first display area A, and the second substrate 12 is located in the second display area B, and the light transmittance of the first substrate 11 is greater than the light transmittance of the second substrate 12 . In this way, the light transmittance of the first display area A can be increased, which is more favorable for the photosensitive element disposed under the first display area A to receive more light.

The substrate 1 can be a flexible substrate or a rigid substrate. The rigid substrate can be, for example, a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate.

When the substrate 1 is a flexible substrate, referring to FIG. 4 , the second substrate 12 can be a laminate of multiple layers of organic material layers and multiple layers of inorganic material layers; the first substrate includes at least a transparent Material layer 111 , the thickness of the first substrate 11 is the same as that of the second substrate 12 . When the thickness of the first substrate 11 is the same as that of the second substrate 12 , it is beneficial to set the display panel 100 as a whole to have the same thickness, and easily make the display panel 100 more beautiful as a whole.

In order to ensure high light transmittance of the first substrate 11 , the material of the transparent material layer 111 needs to be a material with high light transmittance. Preferably, the light transmittance of the transparent material layer 111 of the first substrate 11 may be greater than 90%. Further, the material of the transparent material layer 111 of the first substrate 11 may include at least one of PET (polyethylene terephthalate) and PC (polycarbonate). Both the light transmittance of PET and PC are 92%, which can make the light transmittance of the first substrate 11 higher.

In order to ensure that the brightness of the second display area B is high when the display panel 100 is in operation, the light transmittance of the second display area B needs to be low to reduce the brightness loss of the second display area B. The light transmittance of the second substrate 12 of the second display area B can be within 30%-60%, so as to reduce the light transmittance of the second display area B and increase the brightness of the second display area B when displaying.

Wherein, the material of the organic material layer of the second substrate 12 can be PI (polyimide), and the refractive index of PI has little difference with the refractive index of PET and PC, then the first substrate 11 and the second substrate 12 The refractive index of the first substrate 11 is close to that of the second substrate 12, so that the display effect of the first display area A and the second display area B is greatly different from that caused by the difference in refractive index between the first substrate 11 and the second substrate 12, so that the overall display panel 100 The effect is relatively consistent. Wherein, the material of the inorganic material layer of the second substrate 12 may be SiO ₂ , SiNx or the like.

Further, the first substrate 11 also includes a laminated layer 112 in which an organic material layer and an inorganic material layer are overlapped, and the laminated layer 112 of the first substrate 11 and the laminated layer 121 of the second substrate 12 share a part of the membrane material. Specifically, the organic material layer of the first substrate 11 and the organic material layer of the second substrate 12 in the same layer share a film layer material, and the inorganic material layer of the first substrate and the organic material layer of the second substrate 12 in the same layer The inorganic material layer shares the material of the film layer.

Referring again to FIG. 4 , the stack 112 of the first substrate 11 may include a first organic layer 113 and a first inorganic layer 114 on the first organic layer 113 , and the stack of the second substrate 12 Comprising a second organic layer 121, a second inorganic layer 122, a third organic layer 123 and a third inorganic layer 124 which overlap sequentially from bottom to top, the first organic layer 113 and part of the third organic layer 123 share the same film layer material, the first inorganic layer 114 and the third inorganic layer 124 share the same film layer material, the thickness of the first organic layer 113 is smaller than the thickness of the third organic layer 123, and the first inorganic layer The thickness of layer 114 is equal to the thickness of said third inorganic layer 124 . Wherein, the first inorganic layer 114 and the third inorganic layer 124 share the same film layer material means that the two materials are the same and are formed in the same process step, and the first organic layer 113 shares a part of the third organic layer 123 The same film layer material means that the two materials are the same and formed at the same time. When forming the first organic layer 113 and the third organic layer 123, organic material layers of the same thickness can be formed at the same time, and then the layers located in the first display area A will be formed. Part of the thickness of the organic material layer is partially etched to obtain the first organic layer 113 and the third organic layer 123 .

The transparent material layer 111 of the first substrate 11 can be disposed below the laminated layer 112 of the first substrate 11, and the lower end surface of the transparent material layer 111 of the first substrate 11 is in contact with the second The lower end surface of the substrate 12 is flush. Further, the upper end surface of the laminated layer 112 of the first substrate 11 is flush with the upper end surface of the second substrate 12, then the total thickness of the first substrate 11 is the same as the total thickness of the second substrate 12, thereby more It is beneficial to make the thickness of the display panel 100 substantially the same as a whole, and it is beneficial to improve the aesthetics of the display panel 100 .

In one embodiment, referring to FIG. 4 again, the bottom of the first substrate 11, the bottom of the second substrate 12, the side of the transparent material layer 111 of the first substrate 11 and the second substrate 12 A protective layer 5 is provided between the upper end of the transparent material layer 111 of the first substrate 11 and the stacked layer 112 of the first substrate 11 . The protective layer 5 can protect the first substrate 11 and the second substrate 12 , improve the mechanical strength of the display panel, and further increase the service life of the display panel 100 .

Wherein, the material of the protective layer 5 may include at least one of IZO, ITO, SiNx, and SiOx. The above-mentioned materials can make the light transmittance of the protective layer 5 higher, and prevent the setting of the protective layer 5 from affecting the light transmittance of the first display area A.

In one embodiment, a buffer layer 8 can be arranged between the substrate 1 and the driving circuit layer 2, the material of the buffer layer 8 can be SiNx or SiOx, and the buffer layer 8 can improve the viscosity performance of the substrate 1 and the driving circuit layer 2 , avoiding the detachment of the substrate 1 from the driving circuit layer 2 and increasing the service life of the display panel 100 .

In the display panel 100 provided in the embodiment of the present application, the driving mode of the first display area A can be passive driving or active driving. When the driving mode of the first display area A is passive driving, the first display area A is a PMOLED display area; When the driving mode of a display area A is active driving, the first display area A is an AMOLED display area. The driving mode of the second display area B is active driving, and the second display area is an AMOLED display area.

FIG. 3 is a cross-sectional view along CC' of the first display area A and part of the second display area B of the display panel 100. Referring to FIG. Referring to FIG. 3 , the part of the driving circuit layer 2 located in the second display area B may include a gate insulating layer 24 , a capacitor insulating layer 25 located on the gate insulating layer 24 , an interlayer dielectric layer 26 located on the capacitor insulating layer 25 , The planarization layer 27 on the interlayer dielectric layer 26 and the anode layer 23 on the planarization layer 27 , as well as transistors (not shown) and storage capacitors (not shown) arranged between the film layers. Wherein, the material of the anode layer 23 may be a sandwich structure in which an Ag film is arranged between two indium tin oxide film layers.

When the first display area A is a PMOLED display area, the structure of the driving circuit layer 2 located in the first display area A can be in several ways as follows.

In the first way, referring to FIG. 5 (FIG. 5 is a cross-sectional view of the first display area A and part of the second display area B of a display panel 100 along CC'), the driving circuit layer 2 is located in the first display area A. Including a gate insulating layer 24, a capacitor insulating layer 25 on the gate insulating layer 24, an interlayer dielectric layer 26 on the capacitor insulating layer 25, a planarization layer 27 on the interlayer dielectric layer 26, and a planarization layer 27 on the anode layer 21. Wherein, the gate insulating layer 24, the capacitive insulating layer 25, the interlayer dielectric layer 26, the planarization layer 27 and the corresponding film layers located in the planarization layer 27 and the second display area B of the first display area A are located in the same layer, And formed in the same process. The material of the anode layer 21 may be a single-layer film structure made of transparent materials. Further, the transparency of the transparent material of the anode layer 21 is greater than or equal to 90%. Preferably, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the anode layer 21 in the first display area A is ensured to be high, thereby increasing the light transmittance of the first display area A.

In the second method, the driving circuit layer 2 located in the first display area A may only include the anode layer 21 without protecting other film layers, so that the light transmittance of the driving circuit layer in the first display area A is higher. Wherein, the material of the anode layer 21 may be a single-layer film structure made of transparent materials. Further, the transparency of the transparent material used to prepare the anode layer 21 is greater than or equal to 90%. Preferably, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide.

In the third manner, referring to FIG. 5 , the driving circuit layer 2 located in the first display area A may include an anode layer 21 and a transparent organic material film layer 22 disposed under the anode layer 21 . Wherein, the transparent organic material film layer 22 and the anode layer 21 can be made of transparent materials, and the material of the anode layer 21 can be a single-layer film structure made of transparent materials. Further, the light transmittance of the transparent organic material film layer 22 and the anode layer 21 are all greater than 90%. Preferably, the transparent material for the anode layer 21 is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. The material of the transparent organic material film layer 22 can be PET or PC, etc. Furthermore, the total thickness and The thickness of the transparent organic material film layer 22 in the first display area A is the same, so that the thickness of the part of the driving circuit layer 2 located in the first display area A is the same as that of the part located in the second display area B, which is beneficial to reduce the thickness of the display panel 100 Overall, they are roughly the same, so as to improve the aesthetics of the display panel 100 .

When the first display area A is an AMOLED display area, the part of the driving circuit layer 2 located in the first display area A is provided with a plurality of transistors and a plurality of storage capacitors, and a plurality of transistors and a plurality of storage capacitors constitute a plurality of first drive circuits The unit is used to drive the organic light-emitting material of the light-emitting functional film layer 3 to emit light, so as to make the first display area A display.

The second display area B is an AMOLED display area, and the part of the driving circuit layer 2 located in the second display area B is provided with a plurality of transistors and a plurality of storage capacitors, and a plurality of transistors and a plurality of storage capacitors constitute a plurality of second drive circuit units , used to drive the organic light-emitting material of the light-emitting functional film layer 3 to emit light, so as to make the second display area A display.

In one embodiment, the number of transistors of the first driving circuit unit is smaller than the number of transistors of the second driving circuit unit. Optionally, the first driving circuit unit may be a 2TIC driving circuit, (that is, the first driving circuit unit includes two transistors and a storage capacitor), or the first driving circuit unit may be a 3TIC driving circuit (that is, the first driving circuit The cell consists of three transistors and a storage capacitor). The second drive circuit unit can be, for example, a 7TIC circuit (that is, seven transistors and a storage capacitor included in the second drive circuit unit), a 5TIC circuit (that is, five transistors and a storage capacitor included in the second drive circuit unit), or a 4TIC circuit. (that is, the second drive circuit unit includes four transistors and a storage capacitor) and so on. In this way, the structural complexity of the first driving circuit unit is less than that of the second driving circuit unit, so that the area of the conductive layer in the part of the driving circuit layer 2 located in the first display area A is smaller, thereby improving the first driving circuit unit. Display the light transmittance of area A.

The transistor of the first driving circuit unit may include a first transistor, and the storage capacitor of the first driving circuit unit includes a first plate and a second plate. 6 and 8, the part of the driving circuit layer 2 located in the first display area A has a gate insulating layer 24, a capacitor insulating layer 25 located on the gate insulating layer 24, and an interlayer dielectric layer located on the capacitor insulating layer 25. 26. The planarization layer 27 located on the interlayer dielectric layer 26, and the first conductive layer 91 located between the gate insulating layer 24 and the capacitor insulating layer 25, a part 912 of the first conductive layer 91 serves as the storage The first plate of the capacitor, the other part 911 is used as the gate of the first transistor. In this way, when the gate of the first transistor, the first plate of the storage capacitor and the connection between the two can be completed in the same step, there is no need to reconnect it after the gate of the first transistor and the first plate of the storage capacitor are formed. The preparation of the connection structure between the two can simplify the preparation process of the first driving circuit unit. Wherein, the first pole plate may be the lower pole plate of the storage capacitor, and the second pole plate may be the upper pole plate of the storage capacitor.

When the first driving circuit unit is a 2TIC driving circuit, the driving circuit layer located in the first display area further includes a power line, a data line, a scanning line, and an anode layer corresponding to a plurality of first driving circuit units one by one. As shown in FIG. 6 , the part of the driving circuit layer 2 located in the first display area has an anode layer 23 and a second conductive layer 92 located on the planarization layer 27 corresponding to the first driving circuit unit one by one. A part 921 of the layer 92 serves as the second plate of the storage capacitor, and another part 922 serves as the power line. In this way, when the power line, the second plate of the storage capacitor and the connection between them can be completed in the same step, there is no need to prepare the connection structure between the two after the power line and the second plate of the storage capacitor are formed , which can simplify the manufacturing process flow of the first driving circuit unit.

It should be noted that, in addition to the first conductive layer 91, the second conductive layer 92 and the anode layer 23 shown in the figure, the part of the driving circuit layer 2 shown in FIG. 6 located in the first display area A also includes data lines, scanning line, the source and drain of the first transistor, the gate, source and drain of the second transistor, but these structures are not shown in FIG. 6 .

When the first drive circuit unit is a 2TIC drive circuit, its circuit diagram is shown in Figure 7, the transistors of the first drive circuit unit include a first transistor T1 and a second transistor T2, the source of the first transistor T1 and the storage The second plate D2 of the capacitor C is respectively connected to the power supply line, the drain of the first transistor T1 is connected to the corresponding anode layer, and the gate of the first transistor is connected to the first plate D1 of the storage capacitor C. connected; the gate of the second transistor T2 is connected to the scan line, the drain of the second transistor T2 is respectively connected to the first plate D1 of the storage capacitor C and the gate of the first transistor T1, the The source of the second transistor T2 is connected to the data line.

Since the drain of the second transistor T2 is respectively connected to the first plate D1 of the storage capacitor C and the gate of the first transistor T1, a part of the first conductive layer is used as the first plate D1 of the storage capacitor C, and the other part is used as the first plate D1 of the storage capacitor C. The gate of the first transistor T1 is connected, and structurally speaking, the drain of the second transistor T2 is directly connected to the first conductive layer. Since the source of the first transistor T1 is respectively connected to the second plate D2 of the storage capacitor C and the power supply line, a part of the second conductive layer is used as the second plate D2 of the storage capacitor C, and the other part is used as the power supply line, structurally speaking, the source of the first transistor T1 is connected to the second conductive layer.

In one embodiment, materials of the first transistor T1, the second transistor T2, the storage capacitor C, the data line, the scan line and the anode layer may be made of transparent materials. Preferably, the transparency of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the driving circuit layer of the first display area A can be made higher, thereby increasing the light transmittance of the first display area A.

When the first drive circuit unit is a 3TIC drive circuit, the drive circuit layer located in the first display area A also includes a power line, a data line, a first scan line, a second scan line, a reference potential line and a plurality of first The driving circuit units correspond to the anode layer one by one. As shown in FIG. 8, the part of the driving circuit layer 2 located in the first display area also has a third conductive layer 93 located on the planarization layer 27, and a part 932 of the third conductive layer 93 serves as the second plate, The other part 931 serves as the corresponding anode layer. In this way, when the anode layer, the second plate of the storage capacitor and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the two after the formation of the anode layer and the second plate of the storage capacitor , which can simplify the manufacturing process flow of the first driving circuit unit.

It should be noted that, in addition to the first conductive layer 91 and the third conductive layer 93 shown in the figure, the part of the driving circuit layer 2 shown in FIG. 8 located in the first display area also includes power lines, data lines, first scanning line, the second scan line, the reference potential line, the source and drain of the first transistor, the gate, source and drain of the third transistor, the gate, source and drain of the fourth transistor, but Figure 8 These structures are not shown in .

When the first drive circuit unit is a 3TIC drive circuit, its circuit diagram is shown in Figure 9, the transistors of the first drive circuit also include a third transistor T3 and a fourth transistor T4, the source of the third transistor T3 is connected to the The gate of the third transistor T3 is connected to the first scan line, the drain of the third transistor T3 is connected to the first plate D1 of the storage capacitor C and the gate of the first transistor T1 respectively. The drain of the first transistor T1 is connected to the power line, the source of the first transistor T1 is respectively connected to the anode layer and the second plate D2 of the storage capacitor C, and the fourth transistor T4 The gate of the fourth transistor T4 is connected to the second scanning line, the source of the fourth transistor T4 is connected to the reference potential line, and the drain of the fourth transistor T4 is connected to the anode layer.

Since the drain of the third transistor T3 is respectively connected to the first plate of the storage capacitor C and the gate of the first transistor T1, a part of the first conductive layer is used as the first plate of the storage capacitor C, and the other part is used as the first plate of the storage capacitor C. The gate of the first transistor T1 is connected, and structurally speaking, the drain of the third transistor T3 is connected to the first conductive layer. Since the source of the first transistor T1 is respectively connected to the anode layer and the second plate D2 of the storage capacitor C, the drain of the fourth transistor T4 is connected to the anode layer, and a part of the third conductive layer is used as a storage capacitor The other part of the second plate D2 of C serves as the corresponding anode layer. Structurally speaking, the source of the first transistor T1 is connected to the third conductive layer, and the drain of the fourth transistor T4 is connected to the third conductive layer.

In one embodiment, the first transistor T1, the third transistor T3, the fourth transistor T4, the storage capacitor C, the data line, and the first scan line of the first drive circuit unit , the second scanning line, the reference potential line and the anode layer are all made of transparent materials. Preferably, the transparency of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the driving circuit layer of the first display area A can be made higher, thereby increasing the light transmittance of the first display area A.

The embodiment of the present application also provides a display device 200 , as shown in FIG. 10 , the display device 200 includes a device body 201 and the above-mentioned display panel 100 . As shown in FIG. 11 , the device body 201 has a device area 202 , and the display panel 100 covers the device body 201 . Wherein, the device area 202 is located below the first display area of the display panel 100 , and the device area 202 is provided with a photosensitive element 203 for collecting light through the first display area of the display panel 100 .

Wherein, the photosensitive element 203 may include a camera and/or a light sensor. Devices other than the photosensitive element 203 may also be disposed in the device area 403 , such as gyroscopes or earpieces.

The device area 202 may be a slotted area, and the first display area of the display panel 100 may be attached to the slotted area, so that the photosensitive element 203 can collect external light through the first display area.

The above-mentioned display device 200, because the thickness of the conductive layer in the first display area of the display panel 100 it includes is smaller than the thickness of the conductive layer in the second display area, can make the light transmittance of the first display area greater than that of the second display area. The light transmittance of the area, so that the photosensitive element disposed under the first display area can receive enough light to ensure that the photosensitive element can work normally.

The above-mentioned electronic devices may be digital devices such as mobile phones, tablets, palmtop computers, and ipods.

The embodiment of the present application also provides a method for manufacturing a display panel, the display panel has a first display area and a second display area, and the manufacturing method includes the following steps 101 to 104 .

In step 101, a substrate is formed.

Wherein, the substrate can be a flexible substrate or a rigid substrate. The rigid substrate can be, for example, a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate.

When the substrate is a flexible substrate, the step 101 of forming the substrate may include steps 1011 to 1012 as follows.

In step 1011, a substrate layer is formed.

Wherein, the substrate layer may be a laminated layer in which multiple organic material layers and multiple inorganic material layers overlap. As shown in FIG. 12 , the substrate layer 101 includes a second organic layer 121 , a second inorganic layer 122 , a third organic layer 123 and a third inorganic layer 124 that overlap sequentially from bottom to top.

In step 1012, a groove is formed at a position of the substrate layer corresponding to the first display area.

The first intermediate structure can be obtained through step 1012, and FIG. 13 is a schematic structural diagram of the first intermediate structure. As shown in FIG. 13 , a groove 102 is formed at the bottom of the substrate layer 101 . Wherein, the second organic layer 121 , the second inorganic layer 122 and the third organic layer 123 located in the first display area A may be etched away by an etching process to form the groove 102 .

In step 1013, a transparent material layer is filled in the groove.

Wherein, the light transmittance of the transparent material layer may be greater than 90%. Further, the material of the transparent material layer may include at least one of PET and PC.

In one embodiment, before step 1013 of forming a transparent material layer in the groove, the manufacturing method may further include: forming a protective layer on the inner surface of the groove and under the substrate layer. Through this step, a second intermediate structure can be obtained. FIG. 14 is a schematic structural diagram of the second intermediate structure. The protective layer 5 is formed on the inner surface of the groove 102 and under the part of the substrate layer 101 located in the second display area B.

Step 1013 can be implemented on the basis of the second intermediate structure, and the transparent material layer 111 is formed in the groove 102 on the basis of the second intermediate structure, and a third intermediate structure can be obtained. Fig. 15 is a structural schematic diagram of a third intermediate structure.

Further, after step 1013 of forming a transparent material layer in the groove, the preparation method may further include: forming a protective layer under the transparent material layer.

In this step, on the basis of the third intermediate structure, a protective layer 5 is formed under the transparent material layer 111 to obtain the structure shown in FIG. 4 , that is, to obtain the substrate 1 .

Wherein, the lower end surface of the transparent material layer 111 can be flush with the lower section of the substrate layer located in the second display area B, so that the thickness of the substrate located in the first display area A and the substrate located in the second display area B same.

In step 102, a driving circuit layer is formed on the substrate.

In step 103, a light-emitting functional film layer is formed on the driving circuit layer.

In step 104, a conductive layer is formed on the light-emitting functional film layer, the thickness of the conductive layer in the first display area is smaller than the thickness of the conductive layer in the second display area, and the thickness of the conductive layer in the first display area is The conductive layer is formed simultaneously with part of the conductive layer in the second display area.

In one embodiment, the step 104 of forming a conductive layer on the light-emitting functional film layer can be completed through the following steps 1041 and 1042 .

In step 1041, a first conductive film layer is formed on the light-emitting functional film layer, and the first conductive film layer covers the first display area and the second display area.

A fourth intermediate structure can be obtained through step 1041, and FIG. 16 is a schematic structural diagram of the fourth intermediate structure. As shown in FIG. 16 , the driving circuit layer 2 is formed on the substrate 1 , and the light-emitting functional film layer 3 is formed on the driving circuit layer 2 , A is the first display area, and B is the second display area. The first conductive film layer 401 is formed on the light-emitting functional film layer 3 , and the first conductive film layer 401 covers the light-emitting functional film layer 3 located in the first display area A and the second display area B at the same time.

Wherein, the material of the first conductive film layer 401 may be indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. Alternatively, the material of the first conductive film layer 401 includes at least one of Mg and Ag. Preferably, the material of the first conductive film layer 401 includes Mg and Ag, and the ratio of the mass of Mg to the mass of Ag is in the range of 1:4˜1:20.

In step 1042, a second conductive film layer is formed on the first conductive film layer, and the second conductive film layer is only disposed in the second display area.

Through step 1042, a fifth intermediate structure can be obtained. As shown in FIG. 17 , it is a schematic structural diagram of the fifth intermediate structure. Wherein, the second conductive film layer 402 is only disposed on the second display area B. As shown in FIG.

Therefore, in the conductive layer 4 obtained through step 1041 and step 1042, the part of the conductive layer 4 located in the first display area A only has the first conductive film layer 401, and the part of the conductive layer 4 located in the second display area B includes the first The conductive film layer 401 and the second conductive film layer 402 .

Wherein, the material of the second conductive film layer may include at least one of Mg and Ag.

In another embodiment, the step 104 of forming a conductive layer on the light-emitting functional film layer can be completed through the following steps 1043 and 1044 .

In step 1043, a third conductive film layer is formed on the light-emitting functional film layer located in the second display area.

A sixth intermediate structure can be obtained through step 1043, and FIG. 18 is a schematic structural diagram of the sixth intermediate structure. As shown in FIG. 18 , the driving circuit layer 2 is formed on the substrate 1 , and the light-emitting functional film layer 3 is formed on the driving circuit layer 2 , A is the first display area, and B is the second display area. The third conductive film layer 403 is formed on the light-emitting functional film layer 3 and only covers the second display area B.

Wherein, the material of the third conductive film layer 403 can be the same as the thickness of the second conductive film layer 402, and the material of the third conductive film layer 403 can be the same as that of the second conductive film layer 402, including at least one of Mg and Ag. kind.

In step 1044, a fourth conductive film layer is formed on the light-emitting functional film layer in the first display area and on the third conductive film layer in the second display area.

A seventh intermediate structure can be obtained through step 1044 , which is a schematic structural diagram of the seventh intermediate structure shown in FIG. 19 . As shown in FIG. 19 , the fourth conductive film layer 404 covers the light emitting film layer 3 of the first display area A and the third conductive film layer 403 of the second display area B.

Therefore, in the conductive layer 4 obtained through step 1043 and step 1044, the part of the conductive layer 4 located in the first display area A only has the fourth conductive film layer 404, and the part of the conductive layer 4 located in the second display area B includes the third conductive film layer 403 and a fourth conductive film layer 404.

The material of the fourth conductive film layer 404 can be indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. Alternatively, the material of the fourth conductive film layer 404 includes at least one of Mg and Ag. Preferably, the material of the third conductive film layer 403 includes Mg and Ag, and the ratio of the mass of Mg to the mass of Ag is in the range of 1:4˜1:20. The thickness of the fourth conductive film layer 404 may be the same as that of the first conductive film layer 401 , and the material of the fourth conductive film layer 404 may be the same as that of the first conductive film layer 401 .

In the display panel prepared by the preparation method provided in the embodiment of the present application, the thickness of the conductive layer located in the first display area is smaller than the thickness of the conductive layer located in the second display area, so that the light transmittance of the first display area is greater than that of the second display area. The light transmittance of the area, so that the photosensitive element disposed under the first display area can receive enough light to ensure that the photosensitive element can work normally.

The display panel prepared by the above-mentioned manufacturing method belongs to the same concept as the display panel 100 provided in the above-mentioned embodiment, and related details can be found in the above-mentioned embodiment of the display panel 100 , which will not be repeated here.

The embodiment of the present application also provides a transparent OLED substrate 300. As shown in FIG. 20, the transparent OLED substrate 300 includes a substrate 1', a driving circuit layer 2' formed on the substrate 1', and a The light-emitting functional film layer 3' on the driving circuit layer 2'. Wherein, the driving circuit layer 2' includes a plurality of first driving circuit units, the first driving circuit unit includes a storage capacitor and a first transistor, and the storage capacitor includes a first plate and a second plate. Referring to FIG. 21 and FIG. 22, the first drive circuit unit has a first conductive layer 91', a part 912' of the first conductive layer 91' serves as the first plate, and another part 911' serves as the first plate. gate of the transistor.

In the transparent OLED substrate 300 provided in the embodiment of the present application, since a part of the first conductive layer serves as the first plate and the other part serves as the gate of the first transistor, the gate of the first transistor and the first electrode of the storage capacitor When a pole plate and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the gate of the first transistor and the first pole plate of the storage capacitor after the formation of the two, which can simplify the first drive The fabrication process flow of the circuit unit.

Wherein, as shown in FIG. 21 and FIG. 22, the driving circuit layer 2' has a gate insulating layer 24', a capacitor insulating layer 25' on the gate insulating layer 24', an interlayer dielectric layer on the capacitor insulating layer 25' layer 26 ′, a planarization layer 27 ′ on the interlayer dielectric layer 26 ′, and a first conductive layer 91 ′ between the gate insulating layer 24 ′ and the capacitor insulating layer 25 ′.

The first driving circuit unit may be a 2TIC driving circuit. When the first driving circuit unit is a 2TIC driving circuit, the driving circuit layer may further include a power supply line, a data line, a scanning line, and an anode layer corresponding to a plurality of first driving circuit units one by one. Referring to FIG. 21, the driving circuit layer also has an anode layer 23' and a second conductive layer 92' on the planarization layer 27' corresponding to the first driving circuit unit, and the second conductive layer 92' A part 922' is used as the second plate of the storage capacitor, and another part 921' is used as the power line; the first drive circuit unit also includes a second transistor, the source of the first transistor is connected to the second The conductive layer 92' is connected, the drain of the first transistor is connected to the corresponding anode layer, the gate of the second transistor is connected to the scanning line, and the drain of the second transistor is respectively connected to the first The conductive layer is connected, and the source of the second transistor is connected to the data line.

It should be noted that, in addition to the first conductive layer 91', the second conductive layer 92', the anode layer 23', the gate insulating layer 24' and the capacitor insulating layer 25', interlayer dielectric layer 26' and planarization layer 27', also including data lines, scan lines, source and drain of the first transistor, gate, source and drain of the second transistor, but Fig. 21 These structures are not shown in .

When the first drive circuit unit is a 2TIC drive circuit, its circuit diagram is shown in Figure 7, the transistors of the first drive circuit unit may include a first transistor T1 and a second transistor T2, the source of the first transistor T1 and The second plate of the storage capacitor C is respectively connected to the power supply line, the drain of the first transistor T1 is connected to the corresponding anode layer, and the gate of the first transistor is connected to the first plate D1 of the storage capacitor C. connected; the gate of the second transistor T2 is connected to the scan line, the drain of the second transistor T2 is respectively connected to the first plate D1 of the storage capacitor C and the gate of the first transistor T1, the The source of the second transistor T2 is connected to the data line.

Since the drain of the second transistor T2 is respectively connected to the first plate of the storage capacitor C and the gate of the first transistor T1, a part of the first conductive layer is used as the first plate D1 of the storage capacitor C, and the other part is used as the first plate D1 of the storage capacitor C. If the gate of the first transistor T1 is connected, structurally speaking, the drain of the second transistor T2 is directly connected to the first conductive layer. Since the source of the first transistor T1 is respectively connected to the second plate D2 of the storage capacitor C and the power supply line, a part of the second conductive layer is used as the second plate D2 of the storage capacitor C, and the other part is used as the power supply line, structurally speaking, the source of the first transistor T1 is connected to the second conductive layer.

Materials of the first transistor T1, the second transistor T2, the storage capacitor C, the data lines, the scan lines and the anode layer are made of transparent materials. Preferably, the transparency of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the driving circuit layer of the transparent OLED substrate can be made higher, thereby increasing the light transmittance of the transparent OLED substrate.

The first driving circuit unit may be a 3TIC driving circuit. When the first driving circuit unit is a 3TIC driving circuit, the driving circuit layer may also include a power line, a data line, a first scanning line, a second scanning line, a reference potential line and a one-to-one correspondence with a plurality of first driving circuit units the anode layer. As shown in FIG. 22, the driving circuit layer 2' has a third conductive layer 93' on the planarization layer 27', a part 932' of the third conductive layer 93' serves as the second plate, and another part 931 ' as the corresponding anode layer. In this way, when the anode layer, the second plate of the storage capacitor and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the two after the formation of the anode layer and the second plate of the storage capacitor , which can simplify the manufacturing process flow of the first driving circuit unit.

It should be noted that, in addition to the first conductive layer 91', the third conductive layer 93', the gate insulating layer 24', the capacitor insulating layer 25', the interlayer The dielectric layer 26' and the planarization layer 27' also include a power line, a data line, a first scan line, a second scan line, a reference potential line, the source and drain of the first transistor, the gate of the third transistor, source and drain, the gate of the fourth transistor, source and drain, but these structures are not shown in FIG. 22 .

When the first drive circuit unit is a 3TIC drive circuit, its circuit diagram is shown in Figure 9, the transistors of the first drive circuit unit also include a third transistor T3 and a fourth transistor T4, the source of the third transistor T3 and The data line is connected, the gate of the third transistor T3 is connected to the first scan line, and the drain of the third transistor T3 is respectively connected to the first plate D1 of the storage capacitor C and the first electrode of the first transistor T1. The gate is connected, the drain of the first transistor T1 is connected to the power supply line, the source of the first transistor T1 is respectively connected to the anode layer and the second plate D2 of the storage capacitor C, and the fourth transistor The gate of T4 is connected to the second scan line, the source of the fourth transistor T4 is connected to the reference potential line, and the drain of the fourth transistor T4 is connected to the corresponding anode layer.

Since the drain of the third transistor T3 is respectively connected to the first plate D1 of the storage capacitor C and the gate of the first transistor T1, a part of the first conductive layer is used as the first plate D1 of the storage capacitor C, and the other part is used as the first plate D1 of the storage capacitor C. The gate of the first transistor T1 is connected, and structurally speaking, the drain of the third transistor T3 is connected to the first conductive layer. Since the source of the first transistor T1 is respectively connected to the anode layer and the second plate D2 of the storage capacitor C, the drain of the fourth transistor T4 is connected to the anode layer, and a part of the third conductive layer is used as a storage capacitor The other part of the second plate D2 of C serves as the corresponding anode layer. Structurally speaking, the source of the first transistor T1 is connected to the third conductive layer, and the drain of the fourth transistor T4 is connected to the third conductive layer.

Preferably, the first transistor T1, the third transistor T3, the fourth transistor T4, the storage capacitor C, the data line, the first scan line, the second scan line, the The reference potential line and the anode layer are made of transparent materials. Preferably, the transparency of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the driving circuit layer of the transparent OLED substrate can be made higher, thereby increasing the light transmittance of the transparent OLED substrate.

The embodiment of the present application also provides a transparent display panel. The transparent display panel includes the above-mentioned transparent OLED substrate and a first encapsulation layer, and the first encapsulation layer is arranged on the transparent OLED substrate away from the substrate. side.

In the transparent display panel provided by the embodiment of the present application, since a part of the first conductive layer of the transparent OLED substrate serves as the first plate of the storage capacitor, and the other part serves as the gate of the first transistor, the gate of the first transistor, the storage When the first pole plate of the capacitor and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the gate of the first transistor and the first pole plate of the storage capacitor after the formation of the two, which can simplify The manufacturing process flow of the first driving circuit unit.

Wherein, the first encapsulation layer may be a thin film encapsulation structure, and the thin film encapsulation structure may include a stack of organic material layers and inorganic material layers alternately stacked, wherein both the organic material layers and the inorganic material layers are transparent materials, and the material of the inorganic material layer may be, for example, It is SiO ₂ , SiNx and Al ₂ O ₃ , etc., and the material of the organic material layer can be PI, PET, etc., for example. The first encapsulation layer may also be a glass cover plate or a glass frit encapsulation structure.

The embodiment of the present application also provides an array substrate, the array substrate includes a first OLED substrate and a second OLED substrate, the first OLED substrate includes the above-mentioned transparent OLED substrate, and the second OLED substrate is a non-transparent OLED substrate. Substrate; the first OLED substrate and the second OLED substrate share the same substrate, and the light-emitting functional film layer of the first OLED substrate and the light-emitting functional film layer of the second OLED substrate are formed in the same process.

In the array substrate provided by the embodiment of the present application, since a part of the first conductive layer of the first OLED substrate serves as the first plate of the storage capacitor, and the other part serves as the gate of the first transistor, the gate of the first transistor, the storage When the first pole plate of the capacitor and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the gate of the first transistor and the first pole plate of the storage capacitor after the formation of the two, which can simplify The manufacturing process flow of the first driving circuit unit.

Wherein, the first OLED substrate of the array substrate may be at least partially surrounded by the second OLED substrate.

In one embodiment, the driving circuit layer of the second OLED substrate includes a plurality of second driving circuit units, and the number of transistors included in the second driving circuit units is greater than the number of transistors included in the first driving circuit units . Optionally, the first driving circuit unit may be a 2TIC driving circuit, (that is, the first driving circuit unit includes two transistors and a storage capacitor), or the first driving circuit unit may be a 3TIC driving circuit (that is, the first driving circuit The cell consists of three transistors and a storage capacitor). The second drive circuit unit can be, for example, a 7TIC circuit (that is, seven transistors and a storage capacitor included in the second drive circuit unit), a 5TIC circuit (that is, five transistors and a storage capacitor included in the second drive circuit unit), or a 4TIC circuit. (that is, the second drive circuit unit includes four transistors and a storage capacitor) and so on. In this way, the structural complexity of the first driving circuit unit is less than that of the second driving circuit unit, so that the area of the conductive layer of the driving circuit layer of the first OLED substrate is smaller, thereby improving the light transmission of the first OLED substrate. Rate.

The embodiment of the present application also provides a display screen, which includes the above-mentioned array substrate and a second packaging structure, the second packaging structure is arranged on the array substrate, and the first OLED substrate of the array substrate The photosensitive element can be set below.

In the display screen provided by the embodiment of the present application, since a part of the first conductive layer of the first OLED substrate serves as the first plate of the storage capacitor, and the other part serves as the gate of the first transistor, the gate of the first transistor, the storage When the first pole plate of the capacitor and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the gate of the first transistor and the first pole plate of the storage capacitor after the formation of the two, which can simplify The manufacturing process flow of the first driving circuit unit further simplifies the manufacturing process flow of the driving circuit layer of the first OLED substrate.

Wherein, the second encapsulation layer may be a thin film encapsulation structure, and the thin film encapsulation structure may include a stack of organic material layers and inorganic material layers alternately stacked, wherein both the organic material layers and the inorganic material layers are transparent materials, and the material of the inorganic material layer may be, for example, It is SiO ₂ , SiNx and Al ₂ O ₃ , etc., and the material of the organic material layer can be PI, PET, etc., for example. The second encapsulation layer may also be a glass cover plate or a glass frit encapsulation structure.

The embodiment of the present application also provides a display device, which includes a device body and the above-mentioned display screen. The device body has a device area, and the display screen is covered on the device body. Wherein, the device area is located under the first OLED substrate, and a photosensitive element for collecting light through the first OLED substrate is arranged in the device area.

Wherein, the photosensitive element may include a camera and/or a light sensor. Devices other than the photosensitive element can also be arranged in the device area, such as gyroscopes or earpieces.

The device area can be a slotted area, and the first OLED substrate of the display screen can be attached to the slotted area so that the photosensitive element can collect external light through the first OLED substrate.

Since in the above display device, a part of the first conductive layer of the first OLED substrate is used as the first plate of the storage capacitor, and the other part is used as the gate of the first transistor, the gate of the first transistor, the first electrode of the storage capacitor When the pole plate and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the gate of the first transistor and the first pole plate of the storage capacitor after the formation of the two, which can simplify the first drive circuit The manufacturing process flow of the unit, thereby simplifying the manufacturing process flow of the driving circuit layer of the first OLED substrate.

The above-mentioned electronic devices may be digital devices such as mobile phones, tablets, palmtop computers, and ipods.

It should be noted that in the drawings, the dimensions of layers and regions may be exaggerated for clarity of illustration. Also it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or intervening layers may be present. Further, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element, or one or more intervening layers or elements may be present. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or one or more intervening layers may also be present. or components. Like reference numerals designate like elements throughout.

In the present invention, the terms "first" and "second" are used for descriptive purposes only, and should not be understood as indicating or implying relative importance. The term "plurality" means two or more, unless otherwise clearly defined.

Other embodiments of the invention will be readily apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. The present invention is intended to cover any modification, use or adaptation of the present invention. These modifications, uses or adaptations follow the general principles of the present invention and include common knowledge or conventional technical means in the technical field not disclosed in the present invention . The specification and examples are to be considered exemplary only, with a true scope and spirit of the invention being indicated by the following claims.

It should be understood that the present invention is not limited to the precise constructions which have been described above and shown in the accompanying drawings, and various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.

Claims (34)

1. A display panel, characterized in that the display panel has a first display area (A) and a second display area (B), a photosensitive element can be arranged below the first display area (A), and the display The panel includes a substrate (1) located in the first display area (A) and the second display area (B), a driving circuit layer (2), a light-emitting functional film layer (3) and a conductive layer (4); The driving circuit layer (2) is formed on the substrate (1); The light-emitting functional film layer (3) is formed on the driving circuit layer (2); The conductive layer (4) is formed on the light-emitting functional film layer (3), and the thickness (d1) of the conductive layer located in the first display area (A) is smaller than that of the conductive layer located in the second display area (B). The thickness of the conductive layer (d2). 2. The display panel according to claim 1, wherein the material of the conductive layer located in the first display area is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, or silver-doped oxide indium zinc, or, The material of the conductive layer located in the first display area includes at least one of Mg and Ag. 3 . The display panel according to claim 2 , wherein the ratio of the mass of Mg to the mass of Ag ranges from 1:4 to 1:20. 4. The display panel according to claim 1, wherein the conductive layer is a cathode layer. 5. The display panel according to claim 1, wherein the light-emitting functional film layer comprises an organic light-emitting material and an electron injection layer located between the organic light-emitting material and the conductive layer, and the electron injection layer The material includes Ag, and at least one of Mg, K, Li, and Cs. 6 . The display panel according to claim 5 , wherein the ratio of the mass of Ag in the electron injection layer to the total mass of the electron injection layer ranges from 1:5 to 1:21. 7. The display panel according to claim 1, wherein the ratio of the thickness of the conductive layer located in the first display area (A) to the thickness of the conductive layer located in the second display area (B) is 0.25 :1～0.85:1. 8. The display panel according to claim 7, characterized in that, the thickness of the conductive layer located in the first display area (A) ranges from 5 to 10 nm, and the thickness of the conductive layer located in the second display area (B) is The range is 12-20nm. 9. The display panel according to claim 1, wherein the substrate (1) comprises a first substrate (11) and a second substrate (12), and the first substrate (11) is located at In the first display area (A), the second substrate is located in the second display area (B), and the light transmittance of the first substrate (11) is greater than the light transmittance of the second substrate (12). 10. The display panel according to claim 9, wherein the second substrate is a stack of overlapping layers of organic materials and layers of inorganic materials; the first substrate includes at least a transparent material layer, the thickness of the first substrate is the same as that of the second substrate. 11. The display panel according to claim 10, characterized in that, the first substrate further comprises a stack of overlapping organic material layers and inorganic material layers, and the stack of the first substrate and the first substrate The laminated layers of the two substrates share a part of the film material. 12. The display panel according to claim 11, wherein the laminate of the first substrate comprises a first organic layer and a first inorganic layer on the first organic layer, and the second substrate The stack at the bottom includes a second organic layer, a second inorganic layer, a third organic layer and a third inorganic layer that overlap sequentially from bottom to top, and the first organic layer and part of the third organic layer share the same film layer material, the first inorganic layer and the third inorganic layer share the same film layer material, the thickness of the first organic layer is smaller than the thickness of the third organic layer, and the thickness of the first inorganic layer is equal to the thickness of the the thickness of the third inorganic layer. 13. The display panel according to claim 12, characterized in that, the transparent material layer of the first substrate is arranged under the stacked layers of the first substrate, and the transparent material layer of the first substrate The lower end face of the layer is flush with the lower end face of the second substrate. 14. The display panel according to claim 10, wherein the light transmittance of the transparent material layer of the first substrate is greater than 90%. 15. The display panel according to claim 10, wherein the material of the transparent material layer of the first substrate comprises at least one of PET and PC. 16. The display panel according to claim 10, wherein the light transmittance of the second substrate is within 30%-60%. 17. The display panel according to claim 10, characterized in that, the bottom of the first substrate (11), the bottom of the second substrate (12), the side of the transparent material layer of the first substrate and the A protective layer is provided between the second substrates and/or between the upper end of the transparent material layer of the first substrate and the lamination of the first substrate. 18. The display panel according to claim 17, wherein the material of the protective layer comprises at least one of IZO, ITO, SiNx and SiOx. 19. The display panel according to claim 1, wherein the driving circuit layer of the first display region comprises an anode layer. 20. The display panel according to claim 19, wherein the driving circuit layer of the first display area comprises an anode layer and a transparent organic material film layer disposed under the anode layer. 21. The display panel according to claim 20, wherein the driving circuit layer of the second display area comprises a multi-layer insulating layer, and the thickness of the transparent organic material film layer is the same as that of the second display area. The total thickness of the layer insulation is the same. 22. The display panel according to claim 1, wherein the first display area and the second display area are AMOLED display areas. 23. The display panel according to claim 22, wherein the driving circuit layer located in the first display area includes a plurality of first driving circuit units, and the first driving circuit units include transistors and storage capacitors; The driving circuit layer of the second display area includes a plurality of second driving circuit units, the second driving circuit units include storage capacitors and transistors, and the number of transistors in the first driving circuit unit is smaller than that of the second driving circuit The number of transistors in the cell. 24. The display panel according to claim 23, wherein the transistor of the first driving circuit unit comprises a first transistor, and the storage capacitor of the first driving circuit unit comprises a first plate and a second plate ; The first drive circuit unit has a first conductive layer, a part of the first conductive layer serves as the first plate, and the other part serves as the gate of the first transistor. 25. The display panel according to claim 24, wherein the driving circuit layer located in the first display area further includes power lines, data lines, scanning lines and one-to-one corresponding to a plurality of first driving circuit units. The anode layer, the driving circuit layer of the first display area also has a second conductive layer, a part of the second conductive layer is used as the second plate, and the other part is used as the power line; the first driving circuit unit The transistor also includes a second transistor, the source of the first transistor is connected to the second conductive layer, the drain of the first transistor is connected to the corresponding anode layer, and the gate of the second transistor is connected to the The drains of the second transistors are respectively connected to the first conductive layer, and the sources of the second transistors are connected to the data lines. 26. The display panel according to claim 25, wherein the materials of the first transistor, the second transistor, the storage capacitor, the data line, the scan line and the anode layer are made of Made of transparent material. 27. The display panel according to claim 26, wherein the transparency of the transparent material is greater than or equal to 90%. 28. The display panel according to claim 26, wherein the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. 29. The display panel according to claim 25, wherein the driving circuit layer located in the first display area further comprises power lines, data lines, first scanning lines, second scanning lines, reference potential lines and A plurality of first drive circuit units correspond to the anode layer one by one, and the drive circuit layer of the first display area also has a third conductive layer, a part of the third conductive layer serves as the second plate, and the other part serves as the corresponding Anode layer; the transistor of the first drive circuit unit also includes a third transistor and a fourth transistor, the source of the third transistor is connected to the data line, and the gate of the third transistor is connected to the first The drain of the third transistor is connected to the first conductive layer, the drain of the first transistor is connected to the power supply line, and the source of the first transistor is connected to the third conductive layer. The gate of the fourth transistor is connected to the second scanning line, the source of the fourth transistor is connected to the reference potential line, and the drain of the fourth transistor is connected to the third conductive line. layer connections. 30. The display panel according to claim 29, wherein the first transistor, the third transistor, the fourth transistor, the storage capacitor, the data line, the first scan line , the second scanning line, the reference potential line and the anode layer are made of transparent materials. 31. The display panel according to claim 30, wherein the transparency of the transparent material is greater than or equal to 90%. 32. The display panel according to claim 30, wherein the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. 33. A display device, comprising: The device body has a device area; The display panel according to any one of claims 1 to 32, covered on the device body; Wherein, the device area is located below the first display area, and a photosensitive element for collecting light through the first display area is arranged in the device area. 34. The display device according to claim 33, wherein the photosensitive element comprises a camera and/or a light sensor.