CN200993717Y - Cladding Doped Slab Waveguide Laser Amplifier - Google Patents
Cladding Doped Slab Waveguide Laser Amplifier Download PDFInfo
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- CN200993717Y CN200993717Y CN 200620044369 CN200620044369U CN200993717Y CN 200993717 Y CN200993717 Y CN 200993717Y CN 200620044369 CN200620044369 CN 200620044369 CN 200620044369 U CN200620044369 U CN 200620044369U CN 200993717 Y CN200993717 Y CN 200993717Y
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- 238000005253 cladding Methods 0.000 title claims abstract 5
- 239000013078 crystal Substances 0.000 claims abstract description 75
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 229910052738 indium Inorganic materials 0.000 claims abstract description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000007704 transition Effects 0.000 claims abstract description 12
- 238000005086 pumping Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000003491 array Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 9
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
一种包层掺杂的平板波导激光放大器，该激光放大器由激光晶体、泵浦源、振荡器、隔离器、第一反射镜、冷却装置及铟过渡层组成，所述的激光晶体是一多层板条结构的多面体，从上到下共分3层，中间是未掺杂的纯晶体，上下包层均是掺杂激光晶体，两侧面呈弧形面，该弧形表面有对泵浦光的增透膜，上下包层掺杂激光晶体的外平面上镀有对振荡器输出激光的高反膜，在该高反膜外是铟过渡层，该铟过渡层外贴设所述的冷却装置，所述的泵浦源设置在所述的激光晶体的两个弧形侧面外，所述的振荡器输出的激光通过隔离器、经第一反射镜反射后从所述激光晶体的一个端面以一定的角度进入所述的激光晶体。本实用新型具有散热效果好和结构简单的特点。
A cladding doped planar waveguide laser amplifier, the laser amplifier is composed of a laser crystal, a pump source, an oscillator, an isolator, a first reflector, a cooling device and an indium transition layer. The laser crystal is a polyhedron with a multi-layer slat structure, which is divided into 3 layers from top to bottom, the middle is an undoped pure crystal, the upper and lower claddings are doped laser crystals, the two side surfaces are arc-shaped surfaces, the arc-shaped surfaces have anti-reflection films for pump light, the outer planes of the upper and lower cladding doped laser crystals are plated with high-reflection films for oscillator output laser, the indium transition layer is outside the high-reflection film, the cooling device is attached to the indium transition layer, the pump source is arranged outside the two arc-shaped side surfaces of the laser crystal, the laser output by the oscillator passes through the isolator, is reflected by the first reflector, and enters the laser crystal from one end face of the laser crystal at a certain angle. The utility model has the characteristics of good heat dissipation effect and simple structure.
Description
Technical field
The utility model belongs to laser, is specifically related to clad doped planar waveguide laser amplifier, all is widely used in Laser Processing, communication and military field.
Background technology
Planar waveguide type laser instrument, amplifier are important research directions of high power solid state laser, and the planar waveguide structure has the following advantages: it can with bar shaped diode laser well coupling and beam shaping that need not be extra; Can have very big numerical aperture, can well retrain the light beam of the non-diffraction limit like this, therefore only need simple Focused Optical system even can need not any optical element, directly adopt the proximity coupled system, can obtain succinct and compact Laser Devices like this.The planar waveguide structure of lath-shaped generally adopts maximum surface as cooling surface, helps improving the thermal effect in the laser medium.
Big quantity research is being done aspect the planar waveguide type laser instrument by doctor Shepherd and leader's thereof group, it is exactly that the Sapphire/YAG/Nd:YAG/YAG/Sapphire five-layer structure is [referring to D P Shepherd that doctor Shepherd proposes a kind of more typical planar waveguide structure, High-powerplanar dielectric waveguide lasers, J.Phys.D:Appl.Phys.34 (2001), 2420-2432].Promptly is doped crystal Nd:YAG, middle both sides are unadulterated crystal YAG, outermost is sapphire Sapphire, when adopting end pump and face-pumping mode, pump light produces a large amount of heats when passing through middle Nd:YAG, and unadulterated YAG crystal does not produce heat, heat by Nd:YAG by being delivered to cooling device for YAG and Sapphire.Because caloric requirement could link to each other with cooling device through two-layer (YAG layer and Sapphire layer), so slowed down the heat radiation process to a certain extent, has increased the thermal effect of crystal, influences the output of light beam.
The laser crystal that the utility model adopts is a polyhedral structure, is divided into 3 layers from top to bottom, and the centre is unadulterated pure crystal, and last under-clad layer all is part doped crystals.Like this, the doped crystal of generation heat directly links to each other with cooling device by the good thin indium layer of heat-transfer effect.And the side of crystal is two arcuate flanks, and pump light is coupled by proximity, does not need any optical element that adds, and pump-coupling makes that the structure of total system is more succinct in crystal.
Summary of the invention
The purpose of this utility model is to improve the shortcoming of above-mentioned existing planar waveguide laser amplifier aspect thermal effect and one-piece construction, a kind of clad doped planar waveguide laser amplifier is provided, and this laser amplifier should have good heat dissipation effect and characteristic of simple structure.
Technical solution of the present utility model is as follows:
A kind of clad doped planar waveguide laser amplifier, this laser amplifier is by laser crystal, pumping source, oscillator, isolator, first catoptron, cooling device and indium transition layer are formed, described laser crystal is the polyhedron of a multilayer battened construction, be divided into 3 layers from top to bottom, the centre is unadulterated pure crystal, last under-clad layer all is doping laser crystals, curved of two sides, this curved surfaces has the anti-reflection film of pair pump light, be coated with high-reflecting film up and down on the outerplanar of clad doped laser crystal to oscillator output laser, outside this high-reflecting film, be indium transition layer, this indium transition layer described cooling device that is sticked outward, described pumping source is arranged on outside two arcuate flanks of described laser crystal, and the laser of described oscillator output passes through isolator, an end face from described laser crystal after first mirror reflects enters described laser crystal with certain angle.
The best angle that the laser of described oscillator output enters described laser crystal is 45 °.
Described pumping source is made up of a plurality of semiconductor lasers or stripe laser diode array, is provided with equably outside two arcuate flanks of described laser crystal.
The other end of described laser crystal is the amplifying laser output terminal.
The other end of described laser crystal is arranged with second completely reflecting mirror and the 3rd catoptron up and down symmetrically, makes amplifying laser return described laser crystal, and the laser input end of described laser crystal also is the output terminal of amplifying laser.
The pump light that the semiconductor laser pumping source is launched is coupled the back from entering the multilayer slab crystal by proximity.Oscillator output light enters crystal from the side after catoptron is adjusted angle, and repeatedly reflection in crystal, realizes that multiple energy extracts.Described laser thin slice slab crystal two maximum surfaces up and down links by thin indium layer and cooling device, reaches better heat radiating effect.
Technique effect of the present utility model
1. the laser crystal of the utility model employing is a polyhedral structure, is divided into 3 layers from top to bottom, and the centre is unadulterated pure crystal, and last under-clad layer all is part doped crystals.Like this, the doped crystal of generation heat directly links to each other good cooling results by the good thin indium layer of heat-transfer effect with cooling device.
2. pump light is coupled by proximity, does not need any optical element that adds, and pump-coupling makes that the structure of total system is more succinct in crystal, and pump light is also more even.
3. utilize light path in a zigzag, can adopt the heavy caliber light beam, the damage of prevention plane of crystal is applicable to powerful light beam output.
Description of drawings
Fig. 1 is the structural representation of the utility model laser crystal
Fig. 2 is the pumping scheme of the utility model laser crystal
Fig. 3 is the clad doped planar waveguide laser amplifier synoptic diagram of the utility model embodiment 1 one way
Fig. 4 is the clad doped planar waveguide laser amplifier synoptic diagram of the utility model embodiment 2 round trips
Embodiment
The utility model is described in further detail below in conjunction with drawings and Examples, but should not limit protection domain of the present utility model with this.
Embodiment 1
See also Fig. 3 earlier, Fig. 3 is the clad doped planar waveguide laser amplifier synoptic diagram of the utility model embodiment 1 one way, as seen from the figure, the planar waveguide laser amplifier that the utility model is clad doped, by laser crystal, pumping source 3, oscillator 4, isolator 5, first catoptron 8, cooling device 6 and indium transition layer 7 are formed, described laser crystal is the polyhedron of a multilayer battened construction, be divided into 3 layers from top to bottom, referring to Fig. 1, the centre is unadulterated pure crystal 2, last under-clad layer all is doping laser crystals 1, two sides camber face, this curved surfaces has the anti-reflection film of pair pump light, being coated with the high-reflecting film to oscillator output laser on the outerplanar of clad doped up and down laser crystal 1, is indium transition layer 7 outside this high-reflecting film, these indium transition layer 7 outer described cooling devices 6 that are sticked, pumping source 3 is arranged on outside two arcuate flanks of described laser crystal, referring to Fig. 3.The laser of oscillator 4 output is by isolator 5, enter described laser crystal from an end face of described laser crystal with 45 ° angle after 8 reflections of first catoptron, the other end of described laser crystal is the output terminal of amplifying laser.Described pumping source 3 is made up of a plurality of semiconductor lasers or stripe laser diode array, is provided with equably outside two arcuate flanks of described laser crystal.
Be the relevant parameter of embodiment 1 below, for reference: laser crystal as shown in Figure 1, the size of crystal is for long by 30, and is wide by 5, high 7mm, wherein width does not comprise the width of the arc of both sides, and the width of arc is every side 1mm, and profile line part 1 is to mix the YAG of Yb, high 1mm, the 2nd, unadulterated pure YAG, high 5mm.Fig. 2 is the pumping scheme of crystal, and semiconductor laser pumping source 3 need not to increase optical element by the proximity coupling, and pump-coupling is to crystal.Repeatedly reflect at crystals, fully extract energy.At two end faces of crystal, promptly two surfaces up and down of crystal maximum link to each other with cooling device 6 by indium 7, realize good thermal diffusion.
See also Fig. 4, Fig. 4 is the clad doped planar waveguide laser amplifier synoptic diagram of the utility model embodiment 2 round trips, be with the different of Fig. 3: the other end of described laser crystal is arranged with second completely reflecting mirror 9 and the 3rd catoptron 10 up and down symmetrically, make amplifying laser return described laser crystal, the laser input end of described laser crystal also is the output terminal of amplifying laser.This is in order more effectively to extract energy, and the efficient of round trip structure will be apparently higher than the one way structure, so actual use more.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620044369 CN200993717Y (en) | 2006-07-28 | 2006-07-28 | Cladding Doped Slab Waveguide Laser Amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620044369 CN200993717Y (en) | 2006-07-28 | 2006-07-28 | Cladding Doped Slab Waveguide Laser Amplifier |
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| CN200993717Y true CN200993717Y (en) | 2007-12-19 |
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| CN 200620044369 Expired - Fee Related CN200993717Y (en) | 2006-07-28 | 2006-07-28 | Cladding Doped Slab Waveguide Laser Amplifier |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103259178A (en) * | 2013-05-07 | 2013-08-21 | 西安电子科技大学 | Compact direct coupling all-solid-state laser device |
| CN104319603A (en) * | 2014-11-05 | 2015-01-28 | 中国工程物理研究院激光聚变研究中心 | Strip laser amplifier and laser output method thereof |
| CN104332807A (en) * | 2014-11-05 | 2015-02-04 | 中国工程物理研究院激光聚变研究中心 | Slab laser amplifier and laser output method |
| WO2016003542A1 (en) * | 2014-06-30 | 2016-01-07 | Raytheon Company | Improved reflection/absorption coating for laser slabs |
| CN109149349A (en) * | 2018-10-08 | 2019-01-04 | 安徽环巢光电科技有限公司 | A kind of disc waveguide laser crystal of three-decker |
-
2006
- 2006-07-28 CN CN 200620044369 patent/CN200993717Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103259178A (en) * | 2013-05-07 | 2013-08-21 | 西安电子科技大学 | Compact direct coupling all-solid-state laser device |
| WO2016003542A1 (en) * | 2014-06-30 | 2016-01-07 | Raytheon Company | Improved reflection/absorption coating for laser slabs |
| US9465165B2 (en) | 2014-06-30 | 2016-10-11 | Raytheon Company | Reflection/absorption coating for laser slabs |
| CN104319603A (en) * | 2014-11-05 | 2015-01-28 | 中国工程物理研究院激光聚变研究中心 | Strip laser amplifier and laser output method thereof |
| CN104332807A (en) * | 2014-11-05 | 2015-02-04 | 中国工程物理研究院激光聚变研究中心 | Slab laser amplifier and laser output method |
| CN109149349A (en) * | 2018-10-08 | 2019-01-04 | 安徽环巢光电科技有限公司 | A kind of disc waveguide laser crystal of three-decker |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071219 |