CN201629663U - Intelligent power module and device - Google Patents
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- CN201629663U CN201629663U CN2010201617097U CN201020161709U CN201629663U CN 201629663 U CN201629663 U CN 201629663U CN 2010201617097 U CN2010201617097 U CN 2010201617097U CN 201020161709 U CN201020161709 U CN 201020161709U CN 201629663 U CN201629663 U CN 201629663U
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Abstract
The utility model discloses an intelligent power module comprising a control circuit, driving circuits and insulated gate devices, wherein the control signal input end of the control circuit is the control input end of the intelligent power module, and the control signal output end is connected with the control input ends of the driving circuits; the output ends of the driving circuits are connected with the input ends of the insulated gate devices; the numbers of the driving circuits and the insulated gate devices are N which is larger than or equal to 2; the N insulated gate devices are connected in series; and all the N driving circuits are driving circuits for ensuring that the N insulated gate devices are connected in series to work under even voltage. By using the driving for supporting the serial connection of the insulated gate devices, the reliable work that the insulated gate devices are directly connected in series is realized. Thus, the insulated gate devices with low voltage resistance are used to realize the high voltage resistance of the total intelligent power module, and the cost of the total intelligent power module can be reduced.
Description
Technical field
The utility model relates to Intelligent Power Module, particularly relate to a kind of based on igbt (InsulatedGate Bipolar Transistor, breviary is IGBT) or the Intelligent Power Module of metal oxide semiconductor field effect tube (Metal OxideSemiconductor Field Effect Transistor, breviary is MOSFET).
Background technology
Insulated gate device IGBT is since coming out the eighties in last century, because its input impedance height, switching speed is fast, on state voltage is low, blocking voltage is high, bear the big performance of electric current, having obtained in the high-tension high-power field used widely.Yet because the material and the reasons in structure of semiconductor device itself, the present electric pressure of IGBT is the highest to be 6.5kV, does not reach in the electric power system electric pressure under a lot of occasions.This drawbacks limit the IGBT application and development, the IGBT serial connection technology then can address this problem.All press problem yet the IGBT serial connection technology is difficult to overcome, do not have reliable and effective solution at present.
Intelligent Power Module (Intelligent Power Module; breviary is IPM) be advanced mixing integrated power device; by at a high speed, the IGBT of low-power consumption and gate driver circuit and protective circuit constitute, and can be widely used in fields such as electric power system, new energy resources system, high voltage converter, industrial automation, track traffic, special power supply.Yet the performance of Intelligent Power Module depends primarily on the performance of inner integrated IGBT, because IGBT's is withstand voltage limited, performances such as withstand voltage, the frequency of Intelligent Power Module all can't get a promotion, the withstand voltage higher limit of existing IGBT is 6.5kV, is higher than under the withstand voltage occasion of 6.5kV at needs and just can't uses IGBT.On the other hand, because the IGBT serial connection technology has difficulties, when needing work compression resistance to be the Intelligent Power Module of 6.5kV, can only select the withstand voltage IGBT of 6.5kV that is for use; When needing work compression resistance to be the Intelligent Power Module of 4.5kV, can only select the withstand voltage IGBT of 4.5kV that is for use, owing to aforementioned serial connection technology has difficulties, so also can't satisfy the high requirement of withstand voltage of circuit by several the low withstand voltage IGBT that connect.And the IGBT product of existing these height withstand voltage (as 3.3kV, 4.5kV, 6.5kV), again by the monopolization of several big international manufacturer, price is high, and delivery cycle is also longer, and these have all limited the application of Intelligent Power Module largely.
The utility model content
Technical problem to be solved in the utility model is: remedy above-mentioned the deficiencies in the prior art, propose a kind of Intelligent Power Module and device, by reliably being connected in series of insulated gate device, satisfy application circuit for withstand voltage, the high-frequency requirement of height.
Technical problem of the present utility model is solved by following technical scheme:
A kind of Intelligent Power Module, comprise control circuit, drive circuit and insulated gate device, the signal input end of described control circuit is the control input end of described Intelligent Power Module, and the control signal output ends of described control circuit links to each other with the control input end of described drive circuit; The output of described drive circuit links to each other with the input of described insulated gate device; The number of described drive circuit and described insulated gate device is N, and N is more than or equal to 2, and a described N insulated gate device is connected in series, and a described N drive circuit all is the drive circuits that are used to guarantee described N insulated gate device series average-voltage work.
In the optimized technical scheme,
A described N drive circuit includes reference signal generator, comparison amplifying circuit and feedback circuit, the input of described reference signal generator is the control input end of described drive circuit, and the output of described reference signal generator links to each other with the described relatively reference voltage input terminal of amplifying circuit; The input of described feedback circuit links to each other with the collector electrode of described insulated gate device, and output links to each other with the described relatively comparison signal input of amplifying circuit; The described relatively output of amplifying circuit links to each other with the grid of described insulated gate device.
Described insulated gate device is a kind of in IGBT module, igbt chip, MOSFET module, the MOSFET chip.
Also comprise current detecting unit, the input of described current detecting unit links to each other with an end of the series arm of a described N insulated gate device, and the output of described current detecting unit links to each other with the current detecting input of described control circuit.
Also comprise voltage detection unit, the first input end of described voltage detection unit links to each other with an end of the series arm of a described N insulated gate device, second input links to each other with the other end of the series arm of a described N insulated gate device, and the output of described voltage detection unit links to each other with the voltage detecting input of described control circuit.
Also comprise temperature detecting unit, described temperature detecting unit detects the internal temperature of described Intelligent Power Module, and the output of described temperature detecting unit links to each other with the temperature detection input of described control circuit.
Technical problem of the present utility model is solved by following further technical scheme:
A kind of Intelligent Power Module device comprises heat dissipation base, a N insulated gate device, a N drive circuit board, control circuit board, insulation crust, support component; Described N is more than or equal to 2; A described N insulated gate device is connected in series, and is fixed on the heat dissipation base; Described N insulated gate device work of described N the corresponding driving of drive circuit board, and all are the drive circuits that are used to guarantee described N insulated gate device series average-voltage work, a described N drive circuit board is fixedly mounted on the described control circuit board; Described control circuit board receives the control signal of outside input, controls the work of whole module, and described control circuit board is fixed on the fin by described support component; A described N insulated gate device, a N drive circuit board, control circuit board, a support component all are enclosed in described insulation crust the inside.
In the optimized technical scheme,
Also comprise a layer insulating, described insulating barrier is located between a described heat dissipation base and the described N insulated gate device.
Described insulating barrier is made by insulating material carborundum or pottery.
The beneficial effect that the utility model is compared with the prior art is:
Intelligent Power Module of the present utility model and device, adopt the driving of supporting insulated gate device (as IGBT, MOSFET) series connection, reliability Work in the realization module after the direct series connection of insulated gate device, thereby utilize withstand voltage lower IGBT or MOSFET just can realize the high withstand voltage of whole Intelligent Power Module, and can reduce the cost of whole Intelligent Power Module.Simultaneously Intelligent Power Module adopts withstand voltage lower IGBT or MOSFET, and the operating frequency of withstand voltage lower IGBT or MOSFET is higher, so just can realize the high withstand voltage and high workload frequency of Intelligent Power Module simultaneously.Further, integrated current detecting, voltage detecting and temperature detection can in time detect the fault in the whole Intelligent Power Module in the Intelligent Power Module, improve the fail safe of Intelligent Power Module work.
Description of drawings
Fig. 1 is the structure chart of Intelligent Power Module in the utility model;
Fig. 2 is the connection diagram of the Intelligent Power Module in the utility model embodiment one;
Fig. 3 is the connection diagram of the Intelligent Power Module in the utility model embodiment two;
Fig. 4 is the connection diagram of the Intelligent Power Module in the utility model embodiment three;
Fig. 5 is the structural representation of the Intelligent Power Module device in the utility model embodiment four;
Fig. 6 is the structural representation of the Intelligent Power Module device in the utility model embodiment five.
Embodiment
Below in conjunction with embodiment and contrast accompanying drawing the utility model is described in further details.
Embodiment one
As shown in Figure 1, be the structure chart of Intelligent Power Module.Intelligent Power Module comprises control circuit, a N drive circuit and N insulated gate device.The signal input end of control circuit is the input of described Intelligent Power Module, receives the control signal of the extraneous central control unit of Intelligent Power Module application, controls the work of whole power model; The control signal output ends output control signal corresponding of control circuit, the work of control Driver Circuit.Each output of N drive circuit links to each other with grid, the collector and emitter of N corresponding insulated gate device, N insulated gate device is connected in series, and wherein N drive circuit all is the drive circuits that are used to guarantee coupled N insulated gate device series average-voltage work.
Wherein, drive circuit includes reference signal generator, comparison amplifying circuit and feedback circuit, the input of reference signal generator is the control input end of drive circuit, reception is from the control signal of control circuit output, the output of reference signal generator links to each other with the reference voltage input terminal that compares amplifying circuit, to comparing amplifying circuit input reference voltage signal; The input of feedback circuit links to each other with the collector electrode of insulated gate device, and output links to each other with the comparison signal input that compares amplifying circuit.Relatively the output of amplifying circuit is the control signal output ends of drive circuit, links to each other output signal control insulated gate device steady operation with the grid of insulated gate device.
As shown in Figure 2, be the connection diagram of Intelligent Power Module in the present embodiment.Intelligent Power Module comprises control circuit 10, drive circuit 2, IGBT1, drive circuit 4, IGBT3, current detecting unit 20, voltage detection unit 30, temperature detecting unit 40.
IGBT1 and IGBT3 are connected in series, the emitter of IGBT1 is connected with the collector electrode of IGBT3, and the emitter of the collector electrode of IGBT1 (shown in the figure+port), IGBT3 (shown in the figure-port) is respectively the positive port and the negative power port of whole Intelligent Power Module.Wherein, the control input end of Intelligent Power Module is the signal input end of control circuit 10.
Drive circuit 2 drives IGBT1 work, and drive circuit 4 drives IGBT3 work.Drive circuit 2 and 4 can guarantee that all each self-driven IGBT all presses work, and its particular circuit configurations figure can be with reference to following patent application, and application number is: 200920261174.8, and name is called " a kind of drive circuits of the single or multiple insulated gate devices that are connected in series ".
IGBT1 and IGBT3 can be for igbt chips, also can be the IGBT module that igbt chip is formed, IGBT1 and IGBT3 are the IGBT module in the present embodiment, it is withstand voltage to be 1.7kV, then the withstand voltage of Intelligent Power Module that be composed in series of IGBT1 and IGBT3 can reach 3.4kV, system that can compatible 3.3kV, promptly can substitute traditionally, and can increase the voltage redundancy of 0.1kV by a withstand voltage Intelligent Power Module of forming for the IGBT of 3.3kV.
The input of the current detecting unit 20 in the Intelligent Power Module links to each other with the emitter of IGBT3, detects the electric current that flows through among IGBT1 and the IGBT3; The first input end of voltage detection unit 30 links to each other with the collector electrode of IGBT1, and second input links to each other with the emitter of IGBT3, detects the total voltage that IGBT1 connects with IGBT3 and exports; Temperature detecting unit 40 is built in the inside of Intelligent Power Module, the detection module temperature inside.Current detecting unit 20, voltage detection unit 30 and temperature detecting unit 40 will be handled in the current signal, total voltage signal and the temperature signal input control circuit 10 that detect respectively.Wherein, current detecting unit 20 can be the circuit of the device composition of electric current in current sensor, current transformer and other energy testing circuit.Voltage detection unit 30 can be the circuit of the device composition of voltage in voltage sensor, transformer and other energy testing circuit.Temperature detecting unit 40 is by built-in temperature sensor detection module internal temperature.In addition, drive circuit 2 and drive circuit 4 also to the malfunction of control circuit 10 input self to handle.
When abnormal conditions occurring, driving malfunction as over current fault, overvoltage fault, excess temperature fault or drive circuit 2 or 4, export fault-signal by the outside central control unit that the failure output terminal mouth of control circuit 10 is used to Intelligent Power Module, control circuit 10 is exported the reason of concrete fault by over current fault, overvoltage fault, excess temperature fault, driving malfunction port to outside central control unit simultaneously, and then makes corresponding processing.
Intelligent Power Module in the present embodiment adopts the driving of supporting the IGBT series connection, has realized the circuit reliability of the direct series connection of 2 withstand voltage IGBT for 1.7kV.Since in the module 2 withstand voltage be the series connection of the IGBT of 1.7kV, the withstand voltage of Intelligent Power Module can reach 3.3kV, and the price of the IGBT of two 1.7kV often is lower than the price of IGBT of the 3.3kV of a similar model, makes the price of whole Intelligent Power Module also descend to some extent.In addition, because the operating frequency of withstand voltage low IGBT is higher, so can realize the high withstand voltage and high workload frequency of Intelligent Power Module simultaneously.In addition, Intelligent Power Module is connected by two IGBT, when one of them IGBT breaks down, the IGBT that corresponding replacing is broken down gets final product, and need not as traditional Intelligent Power Module, need change whole module, make maintain and replace also more convenient, and reduce maintenance cost.Further, integrated current detecting, voltage detecting and temperature detection can in time detect the fault-signal in the whole Intelligent Power Module in the Intelligent Power Module, improve the fail safe of Intelligent Power Module work.
Also can realize the high-voltage MOSFET Intelligent Power Module by series connection MOSFET chip or MOSFET module in the present embodiment, the corresponding driving circuit adopts the drive circuit of supporting MOSFET directly to connect to get final product.In addition, withstand voltage other withstand voltage other IGBT module of level, further withstand voltage rank of the Intelligent Power Module of raising composition of also can selecting of IGBT.Also can further improve the withstand voltage rank of the Intelligent Power Module of forming by increasing the number of the IGBT that connects.
Embodiment two
As shown in Figure 3, be Intelligent Power Module in the present embodiment.The difference of present embodiment and execution mode one is: IGBT module in the present embodiment and corresponding driving circuit have four, form the half-bridge module structure.
Intelligent Power Module comprises control circuit 10, drive circuit 2, IGBT1, drive circuit 4, IGBT3, drive circuit 6, IGBT5, drive circuit 8, IGBT7, current detecting unit 20, current detecting unit 21, voltage detection unit 30, temperature detecting unit 40.Wherein, drive circuit 2,4,6,8 drives corresponding IGBT1,3,5,7 work respectively, and can guarantee all pressures work of the IGBT that each is self-driven.The emitter of IGBT1 is connected the upside that IGBT1,3 is connected in series form half-bridge circuit with the collector electrode of IGBT3; The emitter of IGBT5 is connected the downside that IGBT5,7 is connected in series form half-bridge circuit with the collector electrode of IGBT7; The collector electrode of IGBT1, the emitter of IGBT7 are respectively the positive port and the negative power port of whole Intelligent Power Module, and the emitter of IGBT3 is connected the intermediate node of back as half-bridge circuit with the collector electrode of IGBT5.Switching signal in the input control signal of control circuit 10 is upper and lower both sides switching signals, controls the series IGBT of upper and lower both sides respectively.Current detecting unit 21 detects the electric current that flows through among IGBT1, the IGBT3, current detecting unit 20 detects the electric current that flows through among IGBT5 and the IGBT7, voltage detection unit 30 detects the total voltage of half-bridge branch road two ends output, temperature detecting unit 40 detection module internal temperatures.
In addition, be composed in series the schematic diagram of half-bridge structure according to the IGBT module, the number that can increase the IGBT module is formed single-phase full bridge structure or three phase full bridge structure.
Embodiment three
As shown in Figure 4, be the Intelligent Power Module in the present embodiment.The difference of present embodiment and execution mode one is: the IGBT module in the present embodiment and the number of corresponding driving circuit are three.
Intelligent Power Module comprises control circuit 10, drive circuit 2, IGBT1, drive circuit 4, IGBT3, drive circuit 6, IGBT5, current detecting unit 20, voltage detection unit 30, temperature detecting unit 40.
Withstand voltage voltage is 1.7kV when IGBT1,3,5 work, then IGBT1, the withstand voltage of 3 and 5 Intelligent Power Module that are composed in series can reach 5.1kV, system that can compatible 4.5kV, promptly can substitute traditionally, and can increase the voltage redundancy of 0.6kV by a withstand voltage Intelligent Power Module of forming for the IGBT of 4.5kV.In addition, IGBT1,3,5 also can select the withstand voltage IGBT module of 1.2kV that is for use, the Intelligent Power Module that is composed in series is withstand voltage can to reach 3.6kV, system that can compatible 3.3kV, promptly can substitute traditionally, and can increase the voltage redundancy of 0.3kV by a withstand voltage Intelligent Power Module of forming for the IGBT of 3.3kV.As seen, withstand voltage selection and the number of the IGBT of Intelligent Power Module internal series-connection can rationally be provided with according to practical application, and be user-friendly.
Embodiment four
As shown in Figure 5, be the structural representation of the Intelligent Power Module device in the present embodiment.The Intelligent Power Module device comprises heat dissipation base 41, three IGBT modules 42, three corresponding driving circuit boards 43, input/output terminal oralia 44, control circuit board 45, insulation crust 46, copper bar 47, support component 48 and power port 49,50 and leads 51.The internal circuit of the Intelligent Power Module device in the present embodiment is the circuit shown in the embodiment four.
Whole Intelligent Power Module is fixed on the base, and base is a metal fin 41, and metal fin 41 can adopt air-cooled or water cooling method.Fix three 1.7kV IGBT modules 42 on the fin 41.Three IGBT module 42 corresponding collector and emitters adopt copper bar 47 to connect, and realize series connection.The corresponding port of the collector electrode of each IGBT, emitter, grid and corresponding intelligent drive circuit plate 43 is connected by lead 51 separately.Three blocks of intelligent drive circuit plates 43 link to each other with a control circuit board 45, are integrated with current detecting unit, voltage detection unit and temperature detecting unit (not shown) on the control circuit board 45.An input/output interface board 44 also is installed on the control circuit board 45, the input/output port of input/output terminal oralia 44 centralized control circuit boards 45, input comprises switching signal, reset signal, input power supply and ground, and output comprises the fault-signal (driving malfunction signal, over current fault signal, overvoltage fault-signal or excess temperature fault-signal) of whole module.The power port 49,50 of Intelligent Power Module is two ports after 42 series connection of three IGBT modules.Input/output terminal oralia 44 and power port 49,50 are by the opening and extraneous realization input and output of corresponding position on the insulation crust 46, in order to implement device and outside input and output; Control circuit board 45 is fixed on the fin 41 by support component 48; Whole module forms independent device by insulation crust 46 sealings.
When the more IGBT module of series connection forms the system of high voltage,, may have withstand voltage problem if each IGBT module 42 directly links to each other with same fin 41.If this is because each IGBT module is installed on the same fin, can guarantee its temperature unanimity.But for series connection, between the base that to also have a problem be exactly each IGBT, shell, the pin individual insulation restriction is arranged, be generally 4kV such as the IGBT class of insulation of 1.7kV.If the IGBT of three 1.7kV is placed on the same fin, when turn-offing, the power port two ends of Intelligent Power Module are (as Fig. 4, be the collector electrode of IGBT1 and the emitter two ends of IGBT5) voltage the highlyest can reach 5.1kV, surpassed the insulation restriction grade of 4kV, might go wrong.Can solve this moment by following dual mode:＜1〉between fin 41 and IGBT module 42, increase the good insulating barrier of one deck thermal conductivity, be implemented in the withstand voltage isolation of fin 41 and IGBT module 42, solve heat dissipation problem.Insulating barrier can be made up of insulating material carborundum or pottery.＜2〉adopt a plurality of fin 41, if air-cooledly then between each fin 41, reserve the space or use filling insulating material, the realization electrical isolation; If water-cooled then links to each other by the insulation water pipe, realize electrical isolation between the intake-outlet of each fin 41.
Embodiment five
As shown in Figure 6, be the structural representation of the Intelligent Power Module device in the present embodiment.The difference of present embodiment and execution mode four is: the Intelligent Power Module device of execution mode four is to form according to the circuit of Fig. 4, comprises three drive circuits and three IGBT; And the Intelligent Power Module device of present embodiment is to form according to the circuit of Fig. 3, comprises four drive circuits and four IGBT.
Among Fig. 6, four IGBT modules are composed in series half-bridge structure, and port 60 is the positive port of Intelligent Power Module device, and port 61 is the negative power port of Intelligent Power Module device, and port 62 is the intermediate node of the half-bridge circuit of Intelligent Power Module device.Other structures of Intelligent Power Module device are all identical with corresponding construction among Fig. 5, in this no longer repeat specification.
Above content be in conjunction with concrete preferred implementation to further describing that the utility model is done, can not assert that concrete enforcement of the present utility model is confined to these explanations.For the utility model person of an ordinary skill in the technical field, make some substituting or obvious modification under the prerequisite of the utility model design not breaking away from, and performance or purposes are identical, all should be considered as belonging to protection range of the present utility model.
Claims (9)
1. Intelligent Power Module, comprise control circuit, drive circuit and insulated gate device, the signal input end of described control circuit is the control input end of described Intelligent Power Module, and the control signal output ends of described control circuit links to each other with the control input end of described drive circuit; The output of described drive circuit links to each other with the input of described insulated gate device; It is characterized in that: the number of described drive circuit and described insulated gate device is N, and N is more than or equal to 2, and a described N insulated gate device is connected in series, and a described N drive circuit all is the drive circuits that are used to guarantee described N insulated gate device series average-voltage work.
2. Intelligent Power Module according to claim 1, it is characterized in that: a described N drive circuit includes reference signal generator, comparison amplifying circuit and feedback circuit, the input of described reference signal generator is the control input end of described drive circuit, and the output of described reference signal generator links to each other with the described relatively reference voltage input terminal of amplifying circuit; The input of described feedback circuit links to each other with the collector electrode of described insulated gate device, and output links to each other with the described relatively comparison signal input of amplifying circuit; The described relatively output of amplifying circuit links to each other with the grid of described insulated gate device.
3. Intelligent Power Module according to claim 1 is characterized in that: described insulated gate device is a kind of in IGBT module, igbt chip, MOSFET module, the MOSFET chip.
4. Intelligent Power Module according to claim 1, it is characterized in that: also comprise current detecting unit, the input of described current detecting unit links to each other with an end of the series arm of a described N insulated gate device, and the output of described current detecting unit links to each other with the current detecting input of described control circuit.
5. Intelligent Power Module according to claim 1, it is characterized in that: also comprise voltage detection unit, the first input end of described voltage detection unit links to each other with an end of the series arm of a described N insulated gate device, second input links to each other with the other end of the series arm of a described N insulated gate device, and the output of described voltage detection unit links to each other with the voltage detecting input of described control circuit.
6. Intelligent Power Module according to claim 1, it is characterized in that: also comprise temperature detecting unit, described temperature detecting unit detects the internal temperature of described Intelligent Power Module, and the output of described temperature detecting unit links to each other with the temperature detection input of described control circuit.
7. Intelligent Power Module device is characterized in that: comprise heat dissipation base, a N insulated gate device, a N drive circuit board, control circuit board, insulation crust, support component; Described N is more than or equal to 2; A described N insulated gate device is connected in series, and is fixed on the heat dissipation base; Described N insulated gate device work of described N the corresponding driving of drive circuit board, and all are the drive circuits that are used to guarantee described N insulated gate device series average-voltage work, a described N drive circuit board is fixedly mounted on the described control circuit board; Described control circuit board receives the control signal of outside input, controls the work of whole module, and described control circuit board is fixed on the fin by described support component; A described N insulated gate device, a N drive circuit board, control circuit board, a support component all are enclosed in described insulation crust the inside.
8. Intelligent Power Module device according to claim 7 is characterized in that: also comprise a layer insulating, described insulating barrier is located between a described heat dissipation base and the described N insulated gate device.
9. Intelligent Power Module device according to claim 8 is characterized in that: described insulating barrier is made by insulating material carborundum or pottery.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102684669A (en) * | 2012-05-16 | 2012-09-19 | 山东新风光电子科技发展有限公司 | Drive circuit of series power device |
| CN102801134A (en) * | 2012-08-09 | 2012-11-28 | 郭高朋 | Power electronic circuit capable of blocking high voltage and control method thereof |
| CN103280950A (en) * | 2011-07-20 | 2013-09-04 | 日银Imp微电子有限公司 | Intelligent power module for three-phase bridge type driving |
| CN103427615A (en) * | 2013-09-06 | 2013-12-04 | 海信（山东）空调有限公司 | Generalized temperature control method for intelligent power modules and frequency conversion equipment |
| CN103430437A (en) * | 2011-03-16 | 2013-12-04 | Abb研究有限公司 | Gate control circuit, power module and associated method |
| CN103595227A (en) * | 2013-11-20 | 2014-02-19 | 西安永电电气有限责任公司 | Intelligent power module |
| CN103973085A (en) * | 2013-02-06 | 2014-08-06 | 英飞凌科技奥地利有限公司 | System And Method For A Driver Circuit |
| CN104113197A (en) * | 2013-04-19 | 2014-10-22 | 广东美的制冷设备有限公司 | Intelligent power module |
| CN105262468A (en) * | 2015-11-03 | 2016-01-20 | 佛山市南海区联合广东新光源产业创新中心 | IGBT protection and drive circuit |
| WO2017071365A1 (en) * | 2015-10-27 | 2017-05-04 | 全球能源互联网研究院 | Digitally driven igbt current detection system and detection method therefor |
| CN111371444A (en) * | 2020-03-18 | 2020-07-03 | 江苏固特电气控制技术有限公司 | High-voltage direct-current solid-state relay circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103430437A (en) * | 2011-03-16 | 2013-12-04 | Abb研究有限公司 | Gate control circuit, power module and associated method |
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| CN103280950A (en) * | 2011-07-20 | 2013-09-04 | 日银Imp微电子有限公司 | Intelligent power module for three-phase bridge type driving |
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| CN103973085A (en) * | 2013-02-06 | 2014-08-06 | 英飞凌科技奥地利有限公司 | System And Method For A Driver Circuit |
| CN103973085B (en) * | 2013-02-06 | 2016-11-23 | 英飞凌科技奥地利有限公司 | System and method for drive circuit |
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| CN103427615A (en) * | 2013-09-06 | 2013-12-04 | 海信（山东）空调有限公司 | Generalized temperature control method for intelligent power modules and frequency conversion equipment |
| CN103427615B (en) * | 2013-09-06 | 2015-07-01 | 海信（山东）空调有限公司 | Generalized temperature control method for intelligent power modules and frequency conversion equipment |
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| CN111371444A (en) * | 2020-03-18 | 2020-07-03 | 江苏固特电气控制技术有限公司 | High-voltage direct-current solid-state relay circuit |
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