CN202487592U - Amorphous or microcrystalline silicon laminated layer thin-film solar battery - Google Patents
Amorphous or microcrystalline silicon laminated layer thin-film solar battery Download PDFInfo
- Publication number
- CN202487592U CN202487592U CN 201220136327 CN201220136327U CN202487592U CN 202487592 U CN202487592 U CN 202487592U CN 201220136327 CN201220136327 CN 201220136327 CN 201220136327 U CN201220136327 U CN 201220136327U CN 202487592 U CN202487592 U CN 202487592U
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- China
- Prior art keywords
- amorphous
- microcrystalline silicon
- film solar
- solar battery
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229910021424 microcrystalline silicon Inorganic materials 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 10
- 239000002131 composite material Substances 0.000 claims abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 239000010936 titanium Substances 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910000756 V alloy Inorganic materials 0.000 claims description 9
- 210000001142 back Anatomy 0.000 claims description 9
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 claims description 9
- 238000010276 construction Methods 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000011787 zinc oxide Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000002905 metal composite material Chemical group 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
An amorphous or microcrystalline silicon laminated layer thin-film solar battery structurally comprises transparent conductive oxide (TCO) glass, an amorphous silicon / microcrystalline silicon laminated layer, a back electrode layer and a piece of back glass. The key of the amorphous or microcrystalline silicon laminated layer thin-film solar battery lies in that the back electrode layer is of a composite structure formed by four metal film layers. The amorphous or microcrystalline silicon laminated layer thin-film solar battery has the advantages that raw material cost of the back electrode layer is reduced compared to a traditional back electrode layer formed by zinc oxide and metal in a composite mode; and the back electrode layer of the amorphous or microcrystalline silicon laminated layer thin-film solar battery has high electrical conductivity and thermal conductivity.
Description
Technical field
The utility model belongs to amorphous/crystalline/micro-crystalline silicon laminated field of thin film solar cells, relates to the composition structure of amorphous/crystalline/micro-crystalline silicon laminated thin-film solar cells.
Background technology
The demand of world energy sources makes the solar cell technology obtain swift and violent development; Today particularly; Thin-film solar cell applications more and more widely; People have developed a lot of new products in order to increase Enterprises'Competitiveness in area of solar cell, like amorphous/crystalline/micro-crystalline silicon laminated thin-film solar cells; People move ahead during the manufacture craft of the back electrode of amorphous/crystalline/micro-crystalline silicon laminated thin-film solar cells is being groped always, and the cost of raw material of the dorsum electrode layer that traditional zinc oxide and metal composite form is still waiting reduction and conductivity and heat conductivity and is still waiting to improve.
Summary of the invention
The utility model is for the cost of material that reduces dorsum electrode layer on the basis of existing technology, conductivity and the heat conductivity that reaches the raising back electrode; Designed a kind of amorphous microcrystalline silicon overlapping thin film solar battery; The back electrode that the utility model provides has good electrical conductivity and heat conductivity, and has reached the purpose that reduces raw-material cost.
The technical scheme that the utility model adopts is: a kind of amorphous microcrystalline silicon overlapping thin film solar battery; Comprise TCO glass, amorphous silicon/microcrystalline silicon tandem, dorsum electrode layer in the structure, reach back-panel glass, key is: the composite construction that described dorsum electrode layer is made up of 4 layers of metallic diaphragm.
Described 4 layers of metallic diaphragm are followed successively by from inside to outside: titanium layer, nickel dam, silver layer, and nickel-vanadium alloy layer.
The key of the utility model is: 1) titanium layer, because this metal of titanium Ti has good adhesiveness, so the adhesive attraction that can play with this metal prevents that effectively rete from coming off; 2) nickel dam, nickel are transition metal; 3) silver layer plays the increase reflection of light; 4) nickel-vanadium alloy layer mainly plays the effect that prevents that silver layer is oxidized.
The beneficial effect of the utility model is: the cost of raw material of the dorsum electrode layer that zinc oxide that the back electrode in one of which, the utility model is more traditional and metal composite form reduces; Two, the back electrode of the utility model has good electrical conductivity and heat conductivity.
Description of drawings
Fig. 1 is the structural representation of the utility model.
In the accompanying drawing, the 1st, TCO glass, the 2nd, amorphous silicon/microcrystalline silicon tandem, the 3rd, titanium layer, the 4th, nickel dam, the 5th, silver layer, the 6th, nickel-vanadium alloy layer.
Embodiment
A kind of amorphous microcrystalline silicon overlapping thin film solar battery comprises TCO glass 1, amorphous silicon/microcrystalline silicon tandem 2, dorsum electrode layer, reaches back-panel glass, importantly: the composite construction that described dorsum electrode layer is made up of 4 layers of metallic diaphragm in the structure.
Described 4 layers of metallic diaphragm are followed successively by from inside to outside: titanium layer 3, nickel dam 4, silver layer 5, and nickel-vanadium alloy layer 6.
The thicknesses of layers of described titanium layer 3 is 95-120nm.
The thicknesses of layers of described nickel dam 4 is 80-100nm.
The thicknesses of layers of described silver layer 5 is 280-300nm.
The thicknesses of layers of described nickel-vanadium alloy layer 6 is 50-60nm.
In the specific implementation, as shown in Figure 1, behind deposition of amorphous silicon on the TCO glass 1/crystalline/micro-crystalline silicon laminated 2, on amorphous silicon/microcrystalline silicon tandem 2, deposit titanium layer 3, nickel dam 4, silver layer 5 more successively, reach nickel-vanadium alloy layer 6.
Deposition rate when wherein, depositing titanium layer 3: 15-20/S, thicknesses of layers are 95-120nm; Deposited nickel layer 4 on titanium layer 3 afterwards, deposition rate is 5-10/S, thicknesses of layers is 80-100nm; On nickel dam 4, deposit silver layer 5 then, deposition rate is 15-20/S, and thicknesses of layers is 280-300nm; On silver layer 5, deposit one deck nickel-vanadium alloy layer 6 at last, deposition rate is 5-9/S, and thicknesses of layers is 50-60nm.Back electrode coating process in the utility model adopts the method for evaporation to carry out, and can reduce raw-material cost widely; And this back electrode has good electrical conductivity and heat conductivity.
Claims (6)
1. amorphous microcrystalline silicon overlapping thin film solar battery; Comprise TCO glass (1), amorphous silicon/microcrystalline silicon tandem (2), dorsum electrode layer in the structure, reach back-panel glass, it is characterized in that: the composite construction that described dorsum electrode layer is made up of 4 layers of metallic diaphragm.
2. a kind of amorphous microcrystalline silicon overlapping thin film solar battery according to claim 1 is characterized in that: described 4 layers of metallic diaphragm are followed successively by from inside to outside: titanium layer (3), nickel dam (4), silver layer (5), and nickel-vanadium alloy layer (6).
3. a kind of amorphous microcrystalline silicon overlapping thin film solar battery according to claim 2, it is characterized in that: the thicknesses of layers of described titanium layer (3) is 95-120nm.
4. a kind of amorphous microcrystalline silicon overlapping thin film solar battery according to claim 2, it is characterized in that: the thicknesses of layers of described nickel dam (4) is 80-100nm.
5. a kind of amorphous microcrystalline silicon overlapping thin film solar battery according to claim 2, it is characterized in that: the thicknesses of layers of described silver layer (5) is 280-300nm.
6. a kind of amorphous microcrystalline silicon overlapping thin film solar battery according to claim 2, it is characterized in that: the thicknesses of layers of described nickel-vanadium alloy layer (6) is 50-60nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220136327 CN202487592U (en) | 2012-04-01 | 2012-04-01 | Amorphous or microcrystalline silicon laminated layer thin-film solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220136327 CN202487592U (en) | 2012-04-01 | 2012-04-01 | Amorphous or microcrystalline silicon laminated layer thin-film solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202487592U true CN202487592U (en) | 2012-10-10 |
Family
ID=46961989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220136327 Expired - Lifetime CN202487592U (en) | 2012-04-01 | 2012-04-01 | Amorphous or microcrystalline silicon laminated layer thin-film solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202487592U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9799781B2 (en) | 2013-11-08 | 2017-10-24 | Lg Electronics Inc. | Solar cell |
-
2012
- 2012-04-01 CN CN 201220136327 patent/CN202487592U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9799781B2 (en) | 2013-11-08 | 2017-10-24 | Lg Electronics Inc. | Solar cell |
| US10644171B2 (en) | 2013-11-08 | 2020-05-05 | Lg Electronics Inc. | Solar cell |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: CHENGDU XUSHUANG SOLAR TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: TUNGHSU GROUP CO., LTD. Effective date: 20140321 Free format text: FORMER OWNER: CHENGDU TAIYISI SOLAR TECHNOLOGY CO., LTD. Effective date: 20140321 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 050021 SHIJIAZHUANG, HEBEI PROVINCE TO: 610200 CHENGDU, SICHUAN PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20140321 Address after: 610200 Sichuan city of Chengdu province Shuangliu County West Port Economic Development Zone and two Hua Road No. 1518 Patentee after: CHENGDU XUSHUANG SOLAR TECHNOLOGY CO., LTD. Address before: 050021 No. 94, Huitong Road, Hebei, Shijiazhuang Patentee before: Tungsu Group Co., Ltd. Patentee before: Chengdu Taiyisi Solar Technology Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121010 |