CN202861625U - Novel thin film solar cell laser etching device - Google Patents
Novel thin film solar cell laser etching device Download PDFInfo
- Publication number
- CN202861625U CN202861625U CN2012204392836U CN201220439283U CN202861625U CN 202861625 U CN202861625 U CN 202861625U CN 2012204392836 U CN2012204392836 U CN 2012204392836U CN 201220439283 U CN201220439283 U CN 201220439283U CN 202861625 U CN202861625 U CN 202861625U
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- Prior art keywords
- laser
- mirror
- energy
- solar cell
- spot
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 15
- 238000010329 laser etching Methods 0.000 title abstract 3
- 238000000608 laser ablation Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 abstract description 17
- 238000009826 distribution Methods 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 abstract description 8
- 241001270131 Agaricus moelleri Species 0.000 abstract description 4
- 238000007493 shaping process Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000006378 damage Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005779 cell damage Effects 0.000 description 1
- 208000037887 cell injury Diseases 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Laser Beam Processing (AREA)
- Lasers (AREA)
Abstract
本实用新型公开了一种新型薄膜太阳电池激光刻蚀装置,包括激光器、扩束镜、聚焦镜和光束整形装置,所述扩束镜安装于激光器和聚焦镜之间,所述光束整形装置安装于激光器和所述扩束镜之间。本实用新型使用近似平顶的激光光斑对太阳电池的膜层进行刻划,相比高斯光斑,使用均匀光斑对激光能量利用的更加充分,便于激光功率的有效调整,降低边缘能量的损失;光斑内能量分布均匀,可以有效、准确的调节激光能量,刻蚀效果好,不损伤底层薄膜、残留物少,对要刻蚀薄膜以外的电池损伤小,改善刻蚀效果,对于衬底不透明,刻蚀难度较大的薄膜电池,使用均匀光斑可以从膜层正面刻蚀,提高激光刻蚀效果,更适宜工业应用。
The utility model discloses a novel thin-film solar battery laser etching device, which comprises a laser, a beam expander, a focusing mirror and a beam shaping device, the beam expanding mirror is installed between the laser and the focusing mirror, and the beam shaping device is installed between the laser and the beam expander. The utility model uses an approximately flat-top laser spot to mark the film layer of the solar cell. Compared with the Gaussian spot, the use of a uniform spot can fully utilize the laser energy, facilitate the effective adjustment of the laser power, and reduce the loss of edge energy; the spot The internal energy distribution is uniform, the laser energy can be adjusted effectively and accurately, the etching effect is good, the bottom film is not damaged, the residue is small, the damage to the battery other than the film to be etched is small, the etching effect is improved, the substrate is opaque, and the engraving For thin-film batteries that are difficult to etch, uniform light spots can be used to etch from the front of the film layer, which improves the laser etching effect and is more suitable for industrial applications.
Description
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012204392836U CN202861625U (en) | 2012-08-31 | 2012-08-31 | Novel thin film solar cell laser etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012204392836U CN202861625U (en) | 2012-08-31 | 2012-08-31 | Novel thin film solar cell laser etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202861625U true CN202861625U (en) | 2013-04-10 |
Family
ID=48028382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012204392836U Expired - Lifetime CN202861625U (en) | 2012-08-31 | 2012-08-31 | Novel thin film solar cell laser etching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202861625U (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106571410A (en) * | 2016-10-17 | 2017-04-19 | 北京四方创能光电科技有限公司 | Full-laser scribing method for flexible stainless steel substrate solar cell module |
| CN107309556A (en) * | 2016-04-14 | 2017-11-03 | 大族激光科技产业集团股份有限公司 | A kind of laser hole drilling system and method |
| CN108061971A (en) * | 2017-12-29 | 2018-05-22 | 江苏中科大港激光科技有限公司 | A kind of beam shaping system for the anti-base material damage of laser cleaning system |
| CN110125536A (en) * | 2019-05-06 | 2019-08-16 | 武汉华工激光工程有限责任公司 | A kind of laser processing device and method of thin-film material removal |
| CN110549008A (en) * | 2019-08-14 | 2019-12-10 | 大族激光科技产业集团股份有限公司 | Silk screen printing plate, and processing system and processing method for laser processing silk screen printing plate |
| CN111180530A (en) * | 2019-12-27 | 2020-05-19 | 天津爱旭太阳能科技有限公司 | A kind of preparation method of selective emitter battery |
| CN111438447A (en) * | 2018-12-29 | 2020-07-24 | 东泰高科装备科技有限公司 | Film opening method, solar cell packaging film and opening method |
| CN113649694A (en) * | 2021-08-12 | 2021-11-16 | 武汉逸飞激光股份有限公司 | Welding method for current collector of cylindrical battery |
| CN114786340A (en) * | 2022-03-25 | 2022-07-22 | 武汉华工激光工程有限责任公司 | Blind hole processing method and FPC (flexible printed circuit) processing method |
| CN118492648A (en) * | 2024-04-30 | 2024-08-16 | 深圳市青虹激光科技有限公司 | Perovskite thin film battery laser scribing method and device |
-
2012
- 2012-08-31 CN CN2012204392836U patent/CN202861625U/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107309556A (en) * | 2016-04-14 | 2017-11-03 | 大族激光科技产业集团股份有限公司 | A kind of laser hole drilling system and method |
| CN106571410A (en) * | 2016-10-17 | 2017-04-19 | 北京四方创能光电科技有限公司 | Full-laser scribing method for flexible stainless steel substrate solar cell module |
| CN108061971A (en) * | 2017-12-29 | 2018-05-22 | 江苏中科大港激光科技有限公司 | A kind of beam shaping system for the anti-base material damage of laser cleaning system |
| CN111438447A (en) * | 2018-12-29 | 2020-07-24 | 东泰高科装备科技有限公司 | Film opening method, solar cell packaging film and opening method |
| CN110125536A (en) * | 2019-05-06 | 2019-08-16 | 武汉华工激光工程有限责任公司 | A kind of laser processing device and method of thin-film material removal |
| CN110549008A (en) * | 2019-08-14 | 2019-12-10 | 大族激光科技产业集团股份有限公司 | Silk screen printing plate, and processing system and processing method for laser processing silk screen printing plate |
| CN111180530A (en) * | 2019-12-27 | 2020-05-19 | 天津爱旭太阳能科技有限公司 | A kind of preparation method of selective emitter battery |
| CN113649694A (en) * | 2021-08-12 | 2021-11-16 | 武汉逸飞激光股份有限公司 | Welding method for current collector of cylindrical battery |
| CN113649694B (en) * | 2021-08-12 | 2024-02-27 | 武汉逸飞激光股份有限公司 | Welding method for cylindrical battery current collector |
| CN114786340A (en) * | 2022-03-25 | 2022-07-22 | 武汉华工激光工程有限责任公司 | Blind hole processing method and FPC (flexible printed circuit) processing method |
| CN118492648A (en) * | 2024-04-30 | 2024-08-16 | 深圳市青虹激光科技有限公司 | Perovskite thin film battery laser scribing method and device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: HANERGY SOLAR PHOTOVOLTAIC TECHNOLOGY LIMITED Effective date: 20141017 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Su Jing Inventor after: Dong Deqing Inventor after: Zhuang Chunquan Inventor after: Wang Tao Inventor after: Ma Haiwen Inventor after: Respect Sprite Inventor after: Guo Qiang Inventor after: Liu Zhanwei Inventor before: Su Jing Inventor before: Dong Deqing Inventor before: Zhuang Chunquan Inventor before: Wang Tao Inventor before: Ma Haiwen Inventor before: Respect Sprite |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: SU JING DONG DEQING ZHUANG CHUNQUAN WANG TAO MA HAIWEN JING XUEBI TO: SU JING DONG DEQING ZHUANG CHUNQUAN WANG TAO MA HAIWEN JING XUEBI GUO QIANG LIU ZHANWEI |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20141017 Address after: The Great Wall Road, 610000 Street Shuangliu Southwest Airport in Sichuan province Chengdu City No. two business center building room 101 Patentee after: SICHUAN HANERGY SOLAR Co.,Ltd. Patentee after: Hanenergy Solar Photovoltaic Technology Co.,Ltd. Address before: The Great Wall Road, 610000 Street Shuangliu Southwest Airport in Sichuan province Chengdu City No. two business center building room 101 Patentee before: SICHUAN HANERGY SOLAR Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201230 Address after: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Beijing Huihong Technology Co.,Ltd. Address before: Room 101, Venture Center building, No.2, Section 1, Changcheng Road, xihanggang street, Shuangliu, Chengdu, Sichuan 610000 Patentee before: SICHUAN HANERGY SOLAR Co.,Ltd. Patentee before: Hanenergy Solar Photovoltaic Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211102 Address after: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Dongjun new energy Co.,Ltd. Address before: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee before: Beijing Huihong Technology Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130410 |