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CN203013709U - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
CN203013709U
CN203013709U CN2012206728165U CN201220672816U CN203013709U CN 203013709 U CN203013709 U CN 203013709U CN 2012206728165 U CN2012206728165 U CN 2012206728165U CN 201220672816 U CN201220672816 U CN 201220672816U CN 203013709 U CN203013709 U CN 203013709U
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CN
China
Prior art keywords
semiconductor device
metal wire
power component
control element
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2012206728165U
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Chinese (zh)
Inventor
古原健二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
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Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to CN2012206728165U priority Critical patent/CN203013709U/en
Application granted granted Critical
Publication of CN203013709U publication Critical patent/CN203013709U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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Abstract

The utility model provides a semiconductor device. The semiconductor device comprises power elements and control elements and further comprises a leading wire framework, metal wires taken as electric connection wires and a resin packaging body, wherein the leading wire framework has a first die pad mounted with the power elements, a second die pad mounted with the control elements and external terminals, the resin packaging body makes the external terminals of the leading wire framework to project and realizes packaging, the external terminals and the power elements are connected by utilizing the thick metal wires, and the power elements and the second die pads are connected by utilizing the thin and hard metal wires. By utilizing the semiconductor device, deformation or break of the metal wires during manufacturing can be prevented, moreover, the thin metal wires can reduce a heat conduction path generated from the control elements to prevent heat conduction, and cost is low.

Description

Semiconductor device
Technical field
The utility model relates to a kind of semiconductor applications, relates in particular to a kind of semiconductor device.
Background technology
Carry out power semiconductor (for example rectification use diode, power MOSFET, IGBT(insulated gate bipolar transistor, Insulated Gate Bipolar Transistor) of high-current switch action and rectification etc.) at work caloric value is very large.Therefore, for the semiconductor device that such power semiconductor is built in capsulation material, wish to have very high heat radiation power.
Generally, can use the lead frame (Lead Frame) that is consisted of by heating panel and lead terminal in semiconductor device, and power semiconductor chip is arranged on this heating panel.Use the capsulation material that is made of resin that above-mentioned structure is sealed, this capsulation material after curing becomes encapsulation.Wherein, lead frame can be formed by high copper of thermal conductivity etc.In addition, the lead terminal that consists of the part of lead frame adopts from the outstanding mode of capsulation material, and uses metal wire (wire) etc. that each of the electrode of power semiconductor chip and the input and output terminal that consists of the signal of telecommunication gone between to be connected.Power semiconductor chip is worked according to the voltage that is applied to from the outside on each lead-in wire.
In practice, the semiconductor device of this structure is by each lead-in wire being inserted in the through hole that forms on printed board and welding to use.Perhaps, can also adopt in such a way, that is: not only each lead-in wire is outstanding from capsulation material, and at the back side of capsulation material, heating panel is exposed.In this case, the heating panel at the back side self also is soldered on printed board and uses sometimes.
At present, for example patent documentation 1 is described, sometimes mixes power component (power semiconductor chip) and control element (control and use semiconductor integrated circuit) are installed in semiconductor device; And power component be connected with control element the gold (Au) line directly connect.
But, the inventor finds: because directly connect with the Au line between power component and control element, the mold pad of installation power element is fixed, and the mold pad that control element is installed can float (not being fixed), so the resin fill stress the when vibration of mold pad and resin-encapsulated can make the Au line disconnect or distortion during fabrication.
[patent documentation 1]: Japan special permission 2011-054773 communique, Mitsuaraki Electric Corp.
Above should be noted that, the introduction of technical background or the analysis of technical problem are just carried out clear, complete explanation for convenient to the technical solution of the utility model, and facilitate those skilled in the art's understanding to set forth.Can not only partly carry out setting forth and think that technique scheme or analysis are for conventionally known to one of skill in the art in background technology of the present utility model because of these schemes or analysis.
Summary of the invention
The utility model provides a kind of semiconductor device, and purpose is to prevent metal wire distortion during fabrication or disconnects.
According to an aspect of the present utility model, a kind of semiconductor device is provided, comprise power component and control element, it is characterized in that, described semiconductor device has:
Lead frame, it has the first mold pad that described power component is installed, and the second mold pad of described control element is installed, and outside terminal;
Metal wire, it is as electric wiring; And,
The resin-encapsulated body, it makes the described outside terminal of described lead frame give prominence to and encapsulate;
Wherein, use the 3rd metal wire to be connected between described outside terminal and described power component, between described power component and described the second mold pad, use first metal wire thin and harder than described the 3rd metal wire is connected.
Thus, use the high and thin metal wire of hardness to be connected between power component and control element, can prevent metal wire distortion or disconnection during fabrication; And thin metal wire can compress the thermally conductive pathways that produces from control element, prevents that the conduction of heat and cost are lower.
According to another aspect of the present utility model, wherein, described lead frame also has framework pad section, and described metal wire is electrically connected to described power component and described control element via described framework pad section.
Thus, by framework pad section is set between control element and power component, thereby control element no longer directly is connected with power component, has prevented that the heat that power component sends is directly delivered to control element.
According to another aspect of the present utility model, wherein, described metal wire comprises: the first metal wire from described power component to described framework pad section, and second metal wire different from described the first metal wire from described framework pad section to described control element.
Thus, adopt different metal wires and will directly not be connected between element, so can not be applied to control element along the stress of metal wire.And because more than one of metal wire, section can switch to different metal wires at the framework pad, so heat-transfer path is dispersed, so can further prevent heat transfer.
According to another aspect of the present utility model, wherein, the first mold pad that described power component is installed is arranged at the inner surface near described resin-encapsulated body, makes described the first mold pad and described the second mold pad not at same plane.
Thus, the first mold pad that power component is installed is sunk to arranging, make the first mold pad that power component is installed and the second mold pad that control element is installed not at same plane, can further prevent heat transfer.
According to another aspect of the present utility model, wherein, described lead frame also has:
Insulating barrier, it simultaneously is adhered to the outer surface of described the first mold pad that described power component is installed;
Heating panel, its one side contacts with the another side of described insulating barrier, and the another side of described heating panel exposes from the surface of described semiconductor device.
Thus, by being set, heating panel can improve better heat dispersion.
According to another aspect of the present utility model, wherein, on the thickness direction of described semiconductor device, the view field of described the second mold pad does not overlap with the view field of described heating panel.
Thus, the mold pad that control element is installed has been avoided the view field of heating panel, can further prevent heat transfer.
According to another aspect of the present utility model, wherein, described heating panel is metal substrate or ceramic substrate.
With reference to following description and accompanying drawing, will know these and other aspects of the present utility model.In these descriptions and accompanying drawing, specifically disclose specific implementations of the present utility model, represent to implement some modes of principle of the present utility model, but should be appreciated that scope of the present utility model is not limited.On the contrary, the utility model comprises spirit and interior all changes, modification and the equivalent of intension scope that falls into appended claims.
Describe and/or illustrative feature for an execution mode, can use in the same manner or in a similar manner in one or more other execution mode, and/or combine with the feature of other execution modes or replace the feature of other execution modes to use.
It should be emphasized that, term " comprises " existence that is used to refer to described feature, important document, step or part when using in this manual, but does not get rid of existence or the increase of one or more further feature, important document, step, part or their combination.
Description of drawings
Can understand better a lot of aspect of the present utility model with reference to following accompanying drawing.Parts in accompanying drawing are not proportional draftings, and just for principle of the present utility model is shown.For the ease of illustrating and describe some parts of the present utility model, in accompanying drawing, corresponding part may be exaggerated or dwindle.The element of describing in an accompanying drawing of the present utility model or a kind of execution mode and feature can combine with element and the feature shown in one or more other accompanying drawing or execution mode.In addition, in the accompanying drawings, similarly label represents parts corresponding in several accompanying drawings, and can be used for indicating the corresponding component that uses more than in a kind of execution mode.
In the accompanying drawings:
Fig. 1 is a structural representation of semiconductor device of the present utility model;
Fig. 2 is the schematic diagram that removes metal wire of semiconductor device shown in Figure 1;
Fig. 3 is the another schematic diagram of semiconductor device shown in Figure 2;
Fig. 4 is the another schematic diagram of semiconductor device shown in Figure 2;
Fig. 5 is the schematic cross-section of semiconductor device shown in Figure 1;
Fig. 6 is the enlarged diagram of the circle part of Fig. 5;
Fig. 7 is the exemplary plot that mold pad is set of the present utility model;
Fig. 8 is another exemplary plot that mold pad is set of the present utility model;
Fig. 9 is another exemplary plot that mold pad is set of the present utility model;
Figure 10 is the another schematic diagram of semiconductor device shown in Figure 1;
Figure 11 is the schematic diagram after semiconductor device shown in Figure 1 encapsulates;
Figure 12 shows the outline drawing after formed product;
Figure 13 shows the another outline drawing after formed product;
Figure 14 shows the another outline drawing after formed product.
Embodiment
With reference to accompanying drawing, by following specification, aforementioned and further feature of the present utility model will become obvious.In specification and accompanying drawing, specifically disclose specific implementations of the present utility model, it has shown the part execution mode that wherein can adopt principle of the present utility model, will be appreciated that, the utility model is not limited to described execution mode, on the contrary, the utility model comprises whole modifications, modification and the equivalent in the scope that falls into claims.
The utility model provides a kind of semiconductor device, and Fig. 1 is a structural representation of semiconductor device of the present utility model.As shown in Figure 1, this semiconductor device 100 comprises power component 101 and control element 102; The concrete formation of power component 101 and control element 102 can with reference to prior art, repeat no more herein.
As shown in Figure 1, this semiconductor device 100 also comprises:
Lead frame 103, it has the first mold pad 104 that power component 101 is installed, and the second mold pad 105 of control element 102 is installed, and outside terminal 106;
Metal wire 301,302,303, it is as electric wiring; And,
Resin-encapsulated body (not shown in figure 1), it makes the outside terminal 106 of lead frame 103 give prominence to and encapsulate;
Wherein, use the 3rd thick metal wire 303 to be connected between outside terminal 106 and power component 101, the first metal wire 301 that between power component 101 and the second mold pad 105, use is hard and thinner than the 3rd thick metal wire 303 is connected.
Thus, use the high and thin metal wire of hardness to be connected between power component and control element, can prevent metal wire distortion or disconnection during fabrication; And thin metal wire can compress the thermally conductive pathways that produces from control element, prevents that the conduction of heat and cost are lower.
In one embodiment, lead frame 103 can also have framework pad section (Frame Tab) 107, this framework pad section 107 can be arranged on lead frame 103 control element 102 around.Fig. 2 is the schematic diagram that removes metal wire of semiconductor device shown in Figure 1, in order to be clearly shown that framework pad section 107, has omitted other parts.
As shown in Figure 2, framework pad section 107 can go between by maintenance and 108 be connected with lead frame 103.And metal wire can be electrically connected to via framework pad section 107 power component 101 and control element 102.Fig. 1 and Fig. 2 describe as example to be provided with framework pad section 107, but the utility model is not limited to this, and framework pad section also can be set, specifically can be as described later.
For the sake of simplicity, only show the label of subelement in Fig. 1.As shown in Figure 1, metal wire can comprise: the first metal wire 301 of 107 from power component 101 to framework pad section, and the second metal wire 302 from framework pad section 107 to control element 102; Wherein, the first metal wire 301 and the second metal wire 302 differences.
In the specific implementation, the first metal wire 301 can adopt thin and hard aluminium (Al) line, and the second metal wire 302 can adopt the Au line.As shown in Figure 1, this semiconductor device can also have the 3rd metal wire 303, can adopt thick Al line.
But the utility model is not limited to this, can also adopt other material; For example can also adopt copper cash to replace aluminum steel.About the material of electric wire, the intensity of aluminum steel and gold thread does not have too large difference; And compare with gold thread, aluminum steel can not extend and be harder.
Fig. 3 is the another schematic diagram of semiconductor device shown in Figure 2.As shown in Figure 3, the length direction of semiconductor device can be made as directions X, the Width of semiconductor device is made as Y-direction, and the thickness direction of semiconductor device (i.e. the direction vertical with X, Y-direction) is made as the Z direction.
Can find out in conjunction with Fig. 2 and Fig. 3, framework pad section 107 be arranged on lead frame 103 control element 102 around, be electrically connected between power component 101 and control element 102 and directly do not connect, but by metal wire via framework pad section 107 indirect joint.
In the utility model, power component 101 can comprise IGBT, fast recovery diode (FRD, Fast Recovery Diode) etc.; Control element 102 can comprise monolithic integrated circuit (MIC, Monolithic Integrated Circuit), cathode-loaded diode (Di, Bootstrap Diode) etc.
Fig. 4 is the another schematic diagram of the semiconductor device of Fig. 2, and as shown in Figure 4, power component 101 can comprise FRD1011 and IGBT1012 etc.; Control element 102 can comprise MIC1021 and Di1022 etc.And, as shown in Figure 4, have high-tension circuit 401 and low-voltage circuit 402 in circuit.
In the utility model, lead frame can have the installation portion (the first mold pad) of power component, installation portion (the second mold pad), lead-in wire and the framework of control element.The material of lead frame can be copper or copper alloy, and thickness can be for example 0.5mm.At power component 101(IGBT, FRD) and the lead-in wire between metal wire can be the crude aluminum line, can be for example 300 microns.At control element 102(MIC, Di) and framework pad section 107 between can be thin gold thread, can be for example 30 microns.At framework pad section 107 and power component 101(IGBT) between can be fine aluminum wire, can be for example 150 microns.But the utility model is not limited to this, can determine according to actual needs concrete thickness or size.
Thus, the control element of a plurality of power components and power ratio control element is arranged on lead frame, and form with resin-encapsulated, in the structure of this semiconductor device (IPM), transmission is not directly connected to power component from the distribution of the signal that control element produces, but be connected to power component by framework pad section, thereby the heat (conducting heat by metal cords) that can the rupturing duty element produces.
In addition, during manufacturing, the part electricity of framework pad section floats, because metal wire will directly not be connected between element, so can not be applied to control element along the stress of metal wire.And because more than one of metal wire, section can switch to different metal wires at the framework pad, so heat-transfer path is dispersed, so can further prevent heat transfer.
In one embodiment, the first mold pad that power component 101 is installed can be arranged at the inner surface near the resin-encapsulated body, makes the first mold pad and the second mold pad not at same plane.But the utility model is not limited to this.
Fig. 5 is the schematic cross-section of semiconductor device shown in Figure 1.As shown in Figure 5, the first mold pad 104 that power component 101 is installed is arranged on the inner surface of resin-encapsulated body 501.On the thickness direction (Z direction) of semiconductor device, the installation portion of power component can be sunk to arranging; The first mold pad 104 and the second mold pad 105 be not at same plane thus.
As shown in Figure 5, lead frame can also have:
Insulating barrier 502, it simultaneously is adhered to the outer surface of the first mold pad 104 that power component 101 is installed; Another side contacts with heating panel 503.
Heating panel 503, its one side contacts with the another side of insulating barrier 502, and the another side of heating panel 503 exposes from the surface (die surface) of semiconductor device.
As shown in Figure 5, on the thickness direction (Z direction) of semiconductor device, the view field of framework pad section 107 does not overlap with the view field of heating panel 503.That is to say the second mold pad 105 and heating panel 503 setting of being staggered.
Thus, by heating panel is set, can improve better heat dispersion.And the second mold pad has been avoided the view field of heating panel, can prevent heat transfer, and for example heat is from the transmission of heating panel through resin mould.
Fig. 6 is the enlarged diagram of the circle part of Fig. 5, and control element and power component are not shown in Fig. 6 for the sake of simplicity.As shown in Figure 6, the first mold pad 104, insulating barrier 502 and the heating panel 503 that power component are installed can superpose successively.It should be noted that Fig. 6 has schematically shown associated components in order to be described clearly, but the utility model is not limited to this.For example, parts in figure can also be divided in the specific implementation thinner layer.
The situation of the mold pad sinking setting that is provided with framework pad section and power component will be installed more than has been described, but the utility model is not limited to this.Fig. 7 to Fig. 9 is other exemplary plot that the first mold pad and the second mold pad are set of the present utility model, only shows for the sake of simplicity section construction.
As shown in Figure 7, the first mold pad 104 that power component 101 is installed same plane be can be arranged on the second mold pad 105 that control element 102 is installed, power component 101 and control elements 102 be connected by the first thin metal wire 301.
In addition, as shown in Figure 8, also the first mold pad 104 that power component 101 is installed can be arranged on same plane with the second mold pad 105 that control element 102 is installed; And framework pad section 107 is set, and this framework pad section 107 can be arranged with the second mold pad in 105 minutes.Connect power components 101 and framework pad section 107 by thin the first metal wire 301; By the second thin metal wire 302 connecting frame pad section 107 and control elements 102.
In addition, as shown in Figure 9, also the first mold pad 104 that power component 101 is installed can be arranged on different planes with the second mold pad 105 that control element 102 is installed.Connect power component 101 and control element 102 by the first thin metal wire 301.
It should be noted that abovely only the mold pad set-up mode to be schematically illustrated, the utility model is not limited to this, can determine concrete execution mode according to actual conditions.
Figure 10 is the another schematic diagram of semiconductor device shown in Figure 1, mainly shows heating panel 503 in the setting of semiconductor device.And, as shown in figure 10, have high-tension circuit 401 and low-voltage circuit 402 in circuit.In the specific implementation, for the mold pad that a plurality of power components are installed, heating panel 503 can be as a whole.
In the utility model, heating panel 503 can be metal substrate, and size can be for example 45*13*0.8(mm), resin-encapsulated body 501 can be epoxy resin, size for example can be 60*30*7(mm).
But the utility model is not limited to this, and heating panel 503 can be also ceramic substrate.For example the one side of ceramic substrate can be welded with Copper Foil and lead frame; Another side exposes (surface of exposing can be attached with copper) from die surface.In the specific implementation, if prepare heating panel, manufacturing process is identical.
In the utility model, the first metal wire 301 can be thin aluminum steel or copper cash, and the second metal wire 302 can be thin gold thread, and the 3rd metal wire 303 can be thick aluminum steel or copper cash.But the utility model is not limited to this, can determine concrete material according to actual conditions.
Schematic diagram after Figure 11 shows as shown in Figure 1 semiconductor device and encapsulates.Figure 12 shows the outline drawing after formed product, shows the front of product; Figure 13 shows the another outline drawing after formed product, shows the side of product; Figure 14 shows the another outline drawing after formed product, shows the back side of product.
In addition, in the specific implementation, heat detection transducer can be installed also on lead frame.
By above-described embodiment as can be known, use the high and thin metal wire of hardness to be connected between power component and control element, can prevent metal wire distortion or disconnection during fabrication; And thin metal wire can compress the thermally conductive pathways that produces from control element, prevents that the conduction of heat and cost are lower.
In addition, by framework pad section is set between control element and power component, and metal wire connects control element and power component via framework pad section; Thereby control element no longer directly is connected with power component, has cut off the heat transfer that power component produces, and has prevented that the heat that power component sends is directly delivered to control element.
In addition, because metal wire will directly not be connected between element, so can not be applied to control element along the stress of metal wire.And because more than one of metal wire, section can switch to different metal wires at the framework pad, so heat-transfer path is dispersed, so can further prevent heat transfer.
In addition, the first mold pad that power component is installed is sunk to arranging, make the first mold pad that power component is installed and the second mold pad that control element is installed not at same plane, can further prevent heat transfer.
In addition, by heating panel is set, can improve better heat dispersion.And framework pad section has avoided the view field of heating panel, can further prevent heat transfer.
More than describe preferred implementation of the present utility model with reference to the accompanying drawings.Many feature and advantage specification detailed according to this of these execution modes is clearly, so claims are intended to cover all these feature and advantage in its true spirit and scope of falling into of these execution modes.In addition, owing to those skilled in the art will find apparent that a lot of modifications and change, therefore not execution mode of the present utility model to be limited to precision architecture and operation illustrated and that describe, but can contain all suitable modifications and the equivalent that falls in its scope.
Specific implementations of the present utility model is disclosed at this.Those of ordinary skill in the art will readily appreciate that, the utility model has other application under other environment.In fact, also there are many execution modes and realization.Claims are absolutely not in order to be restricted to above-mentioned embodiment with scope of the present utility model.In addition, arbitrarily for " be used for ... device " to quote be all to add the explaination of function for the device of describing key element and claim, and specifically use arbitrarily " be used for ... device " the key element of quoting do not wish to be understood to that device adds the element of function, even this claim has comprised the word of " device ".
Although illustrate and described the utility model for certain preferred embodiments or a plurality of execution mode, obviously, those skilled in the art can expect the modification and the modified example that are equal to when reading and understanding specification and accompanying drawing.Especially for the various functions of being carried out by above-mentioned key element (parts, assembly, device, form etc.), unless otherwise noted, the term (comprising quoting of " device ") of wish to be used for describing these key elements corresponding to any key element of the concrete function of the described key element of execution (namely, function equivalent), even this key element structurally is different from the open structure of carrying out this function in illustrated illustrative embodiments of the present utility model or a plurality of execution mode.In addition, although below in several illustrative execution modes only one or more has described specific features of the present utility model, but can be as required and to any given or specifically use favourable aspect and consider, this feature is combined with one or more other features of other execution modes.

Claims (8)

1. a semiconductor device, comprise power component (101) and control element (102), it is characterized in that, described semiconductor device has:
Lead frame (103), it has the first mold pad (104) that described power component (101) is installed, and second mold pad (105) of described control element (102) is installed, and outside terminal (106);
Metal wire (301,302,303), it is as electric wiring; And,
Resin-encapsulated body (501), it makes the described outside terminal (106) of described lead frame (103) give prominence to and encapsulate;
Wherein, use the 3rd metal wire (303) to be connected between described outside terminal (106) and described power component (101), between described power component (101) and described the second mold pad (105), use first metal wire (301) thin and harder than described the 3rd metal wire (303) is connected.
2. semiconductor device according to claim 1, it is characterized in that, described lead frame (103) also has framework pad section (107), and described metal wire (301,302) is electrically connected to described power component (101) and described control element (102) via described framework pad section (107).
3. semiconductor device according to claim 2, it is characterized in that, described metal wire comprises: the first metal wire (301) from described power component (101) to described framework pad section (107), and second metal wire (302) different from described the first metal wire (301) from described framework pad section (107) to described control element (102).
4. the described semiconductor device of according to claim 1 to 3 any one, it is characterized in that, the first mold pad (104) that described power component (101) is installed is arranged at the inner surface near described resin-encapsulated body (501), make described the first mold pad (104) with described the second mold pad (105) not at same plane.
5. the described semiconductor device of according to claim 1 to 3 any one, is characterized in that, described lead frame (103) also has:
Insulating barrier (502), it simultaneously is adhered to the outer surface of described the first mold pad (104) that described power component (101) is installed;
Heating panel (503), its one side contacts with the another side of described insulating barrier (502), and the another side of described heating panel (503) exposes from the surface of described semiconductor device.
6. semiconductor device according to claim 5, is characterized in that, on the thickness direction of described semiconductor device, the view field of described the second mold pad (105) does not overlap with the view field of described heating panel (503).
7. semiconductor device according to claim 5, is characterized in that, described heating panel (503) is metal substrate or ceramic substrate.
8. semiconductor device according to claim 3, is characterized in that, described the first metal wire (301) is thin aluminum steel or copper cash, and described the second metal wire (302) is thin gold thread, and described the 3rd metal wire (303) is thick aluminum steel or copper cash.
CN2012206728165U 2012-12-07 2012-12-07 Semiconductor device Expired - Fee Related CN203013709U (en)

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